Naktal

H. Xu, J. Zhang, and co-workers synthesize anisotropic 2D-layered rhenium disulfide with high crystal quality and uniform monolayer thickness. As described on page 5019, tellurium-assisted epitaxial growth on a mica substrate is chosen to generate such structures.

On page 6985, J.-H. Park and co-workers report a high-performance ReS₂-based thin-film transistor and photodetector with high on/off-current ratio (10⁴), high mobility (7.6 cm² V⁻¹ s⁻¹), high photoresponsivity (2.5 × 10⁷ A W⁻¹), and fast temporal response (rising and decaying time of 670 ms and 5.6 s, respectively) through O₂-plasma treatment.

An ultraclean method to directly transfer a large-area MoS₂ film from the original growth substrate to a flexible substrate by using epoxy glue is developed. The transferred film is observed to be free of wrinkles and cracks and to be as smooth as the film synthesized on the original substrate.

Hydrogen evolution reaction performance of MoS₂ can be enhanced through electric-field-facilitated electron transport. The best catalytic performance of a MoS₂ nanosheet can achieve an overpotential of 38 mV (100 mA cm⁻²) at gate voltage of 5 V, the strategy of utilizing the electric field can be used in other semiconductor materials to improve their electrochemical catalysis for future relevant research.

A silanization reaction is employed to improve the dispersion of precursors on a silicon wafer for a large-size uniform transition metal dichalcogenide (TMD) film synthesis and to achieve a highly crystalline monolayer WS₂ film up to 1 cm². The novel strategy is also verified for the synthesis of WSe₂ and MoS₂ uniform films, suggesting universality for TMD film fabrication.

Through a facile and effective strategy by employing lithium molten salts the controlled synthesis of 2H- and 1T-MoS₂ monolayers with high-yield production is achieved. Both phases of MoS₂ monolayers exhibit high stabilities. When used as a catalyst for hydrogen evolution, these phased MoS₂ monolayers deliver respective advantages in the field of electro- and photo-catalytic hydrogen evolution.

On page 6985, J.-H. Park and co-workers report a high-performance ReS₂-based thin-film transistor and photodetector with high on/off-current ratio (10⁴), high mobility (7.6 cm² V⁻¹ s⁻¹), high photoresponsivity (2.5 × 10⁷ A W⁻¹), and fast temporal response (rising and decaying time of 670 ms and 5.6 s, respectively) through O₂-plasma treatment.

Hexagonal crystalline ultrathin ReSe₂ flakes are synthesized for the first time by a chemical vapor deposition (CVD) method. The as-synthesized ReSe₂ flake is revealed as a novel structure, which has mirror-symmetric single-crystal domains inside, by polarization incident Raman and HRTEM. The successful development of the CVD method will facilitate research on the novel anisotropic electronic/optoelectronic properties of ReSe₂ in the future.

A 2D system of Er-doped MoS₂ layered nanosheets is developed. Structural studies indicate that the Er atoms can be substitutionally introduced into MoS₂ to form stable doping. Density functional theory calculation implies that the system remains stable. Both NIR-to-NIR up-conversion and down-conversion light-emissions are observed in 2D transition metal dichalcogenides, ascribed to the energy transition from Er³⁺ dopants.