Two-dimensional (2D) oxides have a wide variety of applications in electronics and other technologies. However, many oxides are not easy to synthesize as 2D materials through conventional methods. We used nontoxic eutectic gallium-based alloys as a reaction solvent and co-alloyed desired metals into the melt. On the basis of thermodynamic considerations, we predicted the composition of the self-limiting interfacial oxide. We isolated the surface oxide as a 2D layer, either on substrates or in suspension. This enabled us to produce extremely thin subnanometer layers of HfO2, Al2O3, and Gd2O3. The liquid metal–based reaction route can be used to create 2D materials that were previously inaccessible with preexisting methods. The work introduces room-temperature liquid metals as a reaction environment for the synthesis of oxide nanomaterials with low dimensionality.
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A liquid metal reaction environment for the room-temperature synthesis of atomically thin metal oxides
Surface Monocrystallization of Copper Foil for Fast Growth of Large Single-Crystal Graphene under Free Molecular Flow
Wafer-sized single-crystalline Cu (100) surface can be readily achieved on stacked polycrystalline Cu foils via simple oxygen chemisorption-induced reconstruction, enabling fast growth of large-scale millimeter-sized single-crystalline graphene arrays under molecular flow. The maximum growth rate can reach 300 μm min−1, several orders of magnitude higher than previously reported values for millimeter-sized single-crystalline graphene growth on Cu foils.
Bottom-Up Preparation of Ultrathin 2D Aluminum Oxide Nanosheets by Duplicating Graphene Oxide
2D ultrathin aluminum oxide (2D-Al2O3) nanosheets are prepared by duplicating graphene oxide. An amorphous precursor of the hydroxide of aluminum is first deposited onto graphene oxide sheets, which are then converted into 2D-Al2O3 nanosheets by calcination, while the graphene oxide is removed. The 2D-Al2O3 nanosheets have a large specific surface area and a superior adsorption capacity to fluoride ions.