Eduard

A new electron-deficient unit with a fused 5-membered heterocyclic ring was developed by replacing a cyclopenta-1,3-diene from electron-rich donor indacenodithiophene (IDT) with a cyclohepta-4,6-diene-1,3-diimde unit. The imide bridge endows dithienylbenzenebisimide (BBI) with a fixed planar configuration and low energy levels for both the highest occupied molecular orbital (HOMO; −6.24 eV) and the lowest unoccupied molecular orbit (LUMO; −2.57 eV). Organic field-effect transistors (OFETs) based on BBI polymers exhibit electron mobility up to 0.34 cm² V⁻¹ s⁻¹, which indicates that the BBI is a promising n-type building block for optoelectronics.

The FET controller: an electron-deficient building block with a fused 5-membered dithienylbenzenebisimide (BBI) ring was synthesized by replacing a cyclopenta-1,3-diene moiety of indacenodithiophene (IDT) with a cyclohepta-4,6-diene-1,3-diimde unit. The imide bridge endows BBI with a fixed planar configuration and both low HOMO and LUMO energy levels. The polymers based on BBI show good n-type characteristics in OFET devices with the best electron mobility up to 0.34 cm² V⁻¹ s⁻¹ measured under aerobic, ambient conditions.