Shared posts

06 Dec 08:50

Semimetal-to-semiconductor transition and charge-density-wave melting in $1T$-TiSe$_{2-x}$S$_x$ single crystals. (arXiv:1812.02047v1 [cond-mat.mtrl-sci])

by M.-L. Mottas, T. Jaouen, B. Hildebrand, M. Rumo, F. Vanini, E. Razzoli, E. Giannini, C. Barreteau, D. R. Bowler, C. Monney, H. Beck, P. Aebi

The transition metal dichalcogenide $1T$-TiSe$_2$ is a quasi-two-dimensional layered material with a phase transition towards a commensurate charge density wave (CDW) at a critical temperature T$_{c}\approx 200$K. The relationship between the origin of the CDW instability and the semimetallic or semiconducting character of the normal state, i.e., with the non-reconstructed Fermi surface topology, remains elusive. By combining angle-resolved photoemission spectroscopy (ARPES), scanning tunneling microscopy (STM), and density functional theory (DFT) calculations, we investigate $1T$-TiSe$_{2-x}$S$_x$ single crystals. Using STM, we first show that the long-range phase coherent CDW state is stable against S substitutions with concentrations at least up to $x=0.34$. The ARPES measurements then reveal a slow but continuous decrease of the overlap between the electron and hole ($e$-$h$) bands of the semimetallic normal-state well reproduced by DFT and related to slight reductions of both the CDW order parameter and $T_c$. Our DFT calculations further predict a semimetal-to-semiconductor transition of the normal state at a higher critical S concentration of $x_c$=0.9 $\pm$0.1, that coincides with a melted CDW state in TiSeS as measured with STM. Finally, we rationalize the $x$-dependence of the $e$-$h$ band overlap in terms of isovalent substitution-induced competing chemical pressure and charge localization effects. Our study highlights the key role of the $e$-$h$ band overlap for the CDW instability.

05 Dec 10:40

Incommensurate Chiral CDW in $1T$-VSe$_2$. (arXiv:1812.01368v1 [cond-mat.str-el])

by Y. Sugawara, A. Nomura, J. Ishioka, Y. Toda, T. Kurosawa, M. Oda, T. Matsuura, K. Ichimura, S. Tanda

We have investigated the chiral charge-density wave (CDW) in $1T$-VSe$_2$ using scanning tunneling microscopy (STM) measurements and optical polarimetry measurements. With the STM mesurements, we revealed that the CDW intensities along each triple-$q$ directions are different. Thus the rotational symmetry of $1T$-VSe$_2$ is lower than that in typical two-dimentional triple-$q$ CDWs. We found that the CDW peaks form a kagome lattice rather than a triangular lattice. The Friedel oscillations have the chirality and the periodicity reflected properties of the background CDW. With the optical measurements in $1T$-VSe$_2$, we also observed a lower rotational symmetry with the polarization dependence of the transient reflectivity variation, which is consistent with the STM result on a microscopic scale. Both $1T$-TiSe$_2$ and $1T$-VSe$_2$ show chiral CDWs, which implies that such waves are usual for CDWs with the condition $H_\mathrm{CDW} \equiv q_{1}\cdot(q_{2} \times q_{3}) \neq0$.

30 Nov 09:31

Reproduction of the Charge Density Wave Phase Diagram in $1T\text{−}{\mathrm{TiSe}}_{2}$ Exposes its Excitonic Character

by Chuan Chen, Bahadur Singh, Hsin Lin, and Vitor M. Pereira

Author(s): Chuan Chen, Bahadur Singh, Hsin Lin, and Vitor M. Pereira

Recent experiments suggest that excitonic degrees of freedom play an important role in precipitating the charge density wave (CDW) transition in 1T−TiSe2. Through systematic calculations of the electronic and phonon spectrum based on density functional perturbation theory, we show that the predicted...


[Phys. Rev. Lett. 121, 226602] Published Thu Nov 29, 2018

12 Nov 08:33

Unique Gap Structure and Symmetry of the Charge Density Wave in Single-Layer ${\mathrm{VSe}}_{2}$

by P. Chen, Woei Wu Pai, Y.-H. Chan, V. Madhavan, M. Y. Chou, S.-K. Mo, A.-V. Fedorov, and T.-C. Chiang

Author(s): P. Chen, Woei Wu Pai, Y.-H. Chan, V. Madhavan, M. Y. Chou, S.-K. Mo, A.-V. Fedorov, and T.-C. Chiang

Single layers of transition metal dichalcogenides (TMDCs) are excellent candidates for electronic applications beyond the graphene platform; many of them exhibit novel properties including charge density waves (CDWs) and magnetic ordering. CDWs in these single layers are generally a planar projectio...


[Phys. Rev. Lett. 121, 196402] Published Fri Nov 09, 2018

05 Nov 08:41

A setup for extreme-ultraviolet ultrafast angle-resolved photoelectron spectroscopy at 50-kHz repetition rate. (arXiv:1811.00715v2 [physics.ins-det] UPDATED)

by Jan Heye Buss, He Wang, Yiming Xu, Julian Maklar, Frederic Joucken, Lingkun Zeng, Sebastian Stoll, Chris Jozwiak, John Pepper, Yi-De Chuang, Jonathan D. Denlinger, Zahid Hussain, Alessandra Lanzara, Robert A. Kaindl
Alfred Jones

Interesting as a modern TR-ARPES instrument paper, but none of the advances seem particularly groundbreaking or interesting

Time- and angle-resolved photoelectron spectroscopy (trARPES) is a powerful method to track the ultrafast dynamics of quasiparticles and electronic bands in energy and momentum space. We present a setup for trARPES with 22.3 eV extreme-ultraviolet (XUV) femtosecond pulses at 50-kHz repetition rate, which enables fast data acquisition and access to dynamics across momentum space with high sensitivity. The design and operation of the XUV beamline, pump-probe setup, and UHV endstation are described in detail. By characterizing the effect of space-charge broadening, we determine an ultimate source-limited energy resolution of 60 meV, with typically 80-100 meV obtained at 1-2e10 photons/s probe flux on the sample. The instrument capabilities are demonstrated via both equilibrium and time-resolved ARPES studies of transition-metal dichalcogenides. The 50-kHz repetition rate enables sensitive measurements of quasiparticles at low excitation fluences in semiconducting MoSe$_2$, with an instrumental time resolution of 65 fs. Moreover, photo-induced phase transitions can be driven with the available pump fluence, as shown by charge density wave melting in 1T-TiSe$_2$. The high repetition-rate setup thus provides a versatile platform for sensitive XUV trARPES, from quenching of electronic phases down to the perturbative limit.

30 Oct 09:38

Experimental Observation of Hidden Berry Curvature in Inversion-Symmetric Bulk $2H\text{−}{\mathrm{WSe}}_{2}$

by Soohyun Cho, Jin-Hong Park, Jisook Hong, Jongkeun Jung, Beom Seo Kim, Garam Han, Wonshik Kyung, Yeongkwan Kim, S.-K. Mo, J. D. Denlinger, Ji Hoon Shim, Jung Hoon Han, Changyoung Kim, and Seung Ryong Park

Author(s): Soohyun Cho, Jin-Hong Park, Jisook Hong, Jongkeun Jung, Beom Seo Kim, Garam Han, Wonshik Kyung, Yeongkwan Kim, S.-K. Mo, J. D. Denlinger, Ji Hoon Shim, Jung Hoon Han, Changyoung Kim, and Seung Ryong Park

We investigate the hidden Berry curvature in bulk 2H−WSe2 by utilizing the surface sensitivity of angle resolved photoemission (ARPES). The symmetry in the electronic structure of transition metal dichalcogenides is used to uniquely determine the local orbital angular momentum (OAM) contribution to ...


[Phys. Rev. Lett. 121, 186401] Published Mon Oct 29, 2018

29 Oct 08:09

Ultrafast manipulation of mirror domain walls in a charge density wave. (arXiv:1810.11129v1 [cond-mat.mtrl-sci])

by Alfred Zong, Xiaozhe Shen, Anshul Kogar, Linda Ye, Carolyn Marks, Debanjan Chowdhury, Timm Rohwer, Byron Freelon, Stephen Weathersby, Renkai Li, Jie Yang, Joseph Checkelsky, Xijie Wang, Nuh Gedik

Domain walls (DWs) are singularities in an ordered medium that often host exotic phenomena such as charge ordering, insulator-metal transition, or superconductivity. The ability to locally write and erase DWs is highly desirable, as it allows one to design material functionality by patterning DWs in specific configurations. We demonstrate such capability at room temperature in a charge density wave (CDW), a macroscopic condensate of electrons and phonons, in ultrathin 1T-TaS$_2$. A single femtosecond light pulse is shown to locally inject or remove mirror DWs in the CDW condensate, with probabilities tunable by pulse energy and temperature. Using time-resolved electron diffraction, we are able to simultaneously track anti-synchronized CDW amplitude oscillations from both the lattice and the condensate, where photo-injected DWs lead to a red-shifted frequency. Our demonstration of reversible DW manipulation may pave new ways for engineering correlated material systems with light.

22 Oct 11:54

Defect-Induced Modification of Low-Lying Excitons and Valley Selectivity in Monolayer Transition Metal Dichalcogenides

by Sivan Refaely-Abramson, Diana Y. Qiu, Steven G. Louie, and Jeffrey B. Neaton

Author(s): Sivan Refaely-Abramson, Diana Y. Qiu, Steven G. Louie, and Jeffrey B. Neaton

We study the effect of point-defect chalcogen vacancies on the optical properties of monolayer transition metal dichalcogenides using ab initio GW and Bethe-Salpeter equation calculations. We find that chalcogen vacancies introduce unoccupied in-gap states and occupied resonant defect states within ...


[Phys. Rev. Lett. 121, 167402] Published Tue Oct 16, 2018

17 Oct 07:22

Role of matrix elements in the time-resolved photoemission signal. (arXiv:1810.06571v1 [cond-mat.mtrl-sci])

by F. Boschini, D. Bugini, M. Zonno, M. Michiardi, R. P. Day, E. Razzoli, B. Zwartsenberg, E. H. da Silva Neto, S. dal Conte, S. K. Kushwaha, R. J. Cava, S. Zhdanovich, A. K. Mills, G. Levy, E. Carpene, C. Dallera, C. Giannetti, D. J. Jones, G. Cerullo, A. Damascelli

Time- and angle-resolved photoemission spectroscopy accesses the ultrafast evolution of quasiparticles and many-body interactions in solid-state systems. However, the momentum- and energy-resolved transient photoemission intensity may not be unambiguously related to the intrinsic relaxation dynamics of photoexcited electrons. In fact, interpretation of the time-dependent photoemission signal can be affected by the transient evolution of both the one-electron removal spectral function as well as the photoemission dipole matrix elements. Here we investigate the topological insulator Bi$_{1.1}$Sb$_{0.9}$Te$_2$S to demonstrate, by means of a careful probe-polarization study, the transient contribution of matrix elements to the time-resolved photoemission signal.

08 Oct 10:07

Pseudogap, Fermi arc, and Peierls-insulating phase induced by 3D-2D crossover in monolayer VSe2. (arXiv:1810.02511v1 [cond-mat.mtrl-sci])

by Yuki Umemoto, Katsuaki Sugawara, Yuki Nakata, Takashi Takahashi, Takafumi Sato

One of important challenges in condensed-matter physics is to realize new quantum states of matter by manipulating the dimensionality of materials, as represented by the discovery of high-temperature superconductivity in atomic-layer pnictides and room-temperature quantum Hall effect in graphene. Transition-metal dichalcogenides (TMDs) provide a fertile platform for exploring novel quantum phenomena accompanied by the dimensionality change, since they exhibit a variety of electronic/magnetic states owing to quantum confinement. Here we report an anomalous metal-insulator transition induced by 3D-2D crossover in monolayer 1T-VSe2 grown on bilayer graphene. We observed a complete insulating state with a finite energy gap on the entire Fermi surface in monolayer 1T-VSe2 at low temperatures, in sharp contrast to metallic nature of bulk. More surprisingly, monolayer 1T-VSe2 exhibits a pseudogap with Fermi arc at temperatures above the charge-density-wave temperature, showing a close resemblance to high-temperature cuprates. This similarity suggests a common underlying physics between two apparently different systems, pointing to the importance of charge/spin fluctuations to create the novel electronic states, such as pseudogap and Fermi arc, in these materials.

21 Sep 10:09

[ASAP] Quantum Hall Effect in Electron-Doped Black Phosphorus Field-Effect Transistors

by Fangyuan Yang, Zuocheng Zhang, Nai Zhou Wang, Guo Jun Ye, Wenkai Lou, Xiaoying Zhou, Kenji Watanabe, Takashi Taniguchi, Kai Chang, Xian Hui Chen, Yuanbo Zhang

TOC Graphic

Nano Letters
DOI: 10.1021/acs.nanolett.8b03267
19 Sep 09:02

An inconsistent friend

by Matthew F. Pusey
Alfred Jones

Not relevant, but is too ridiculous not to share.

An inconsistent friend

An inconsistent friend, Published online: 18 September 2018; doi:10.1038/s41567-018-0293-7

Are there limits to the applicability of textbook quantum theory? Experiments haven’t found any yet, but a new theoretical analysis shows that treating your colleagues as quantum systems might be a step too far.
30 Jul 15:50

Biexcitonic optical Stark effects in monolayer molybdenum diselenide

by Chaw-Keong Yong

Biexcitonic optical Stark effects in monolayer molybdenum diselenide

Biexcitonic optical Stark effects in monolayer molybdenum diselenide, Published online: 30 July 2018; doi:10.1038/s41567-018-0216-7

Light–matter interactions in monolayer MoSe2 can be dramatically modified by the interactions between the excitonic states, leading to a rich set of light-driven coherent phenomena.
23 Jul 07:33

[ASAP] Resolving Deep Quantum-Well States in Atomically Thin 2H-MoTe2 Flakes by Nanospot Angle-Resolved Photoemission Spectroscopy

by Hongyun Zhang, Changhua Bao, Zeyu Jiang, Kenan Zhang, Hao Li, Chaoyu Chen, José Avila, Yang Wu, Wenhui Duan, Maria C. Asensio, Shuyun Zhou

TOC Graphic

Nano Letters
DOI: 10.1021/acs.nanolett.8b00589
05 Jul 15:44

An Inside Look at the Ti-MoS2 Contact in Ultra-thin Field Effect Transistor with Atomic Resolution. (arXiv:1807.01377v1 [cond-mat.mtrl-sci])

by Ryan J. Wu, Sagar Udyavara, Rui Ma, Yan Wang, Manish Chhowalla, Steven J. Koester, Matthew Neurock, K. Andre Mkhoyan

Two-dimensional molybdenum disulfide (MoS2) is an excellent channel material for ultra-thin field effect transistors. However, high contact resistance across the metal-MoS2 interface continues to limit its widespread realization. Here, using atomic-resolution analytical scanning transmission electron microscopy (STEM) together with first principle calculations, we show that this contact problem is a fundamental limitation from the bonding and interactions at the metal-MoS2 interface that cannot be solved by improved deposition engineering. STEM analysis in conjunction with theory shows that when MoS2 is in contact with Ti, a metal with a high affinity to form strong bonds with sulfur, there is a release of S from Mo along with the formation of small Ti/TixSy clusters. A destruction of the MoS2 layers and penetration of metal can also be expected. The design of true high-mobility metal-MoS2 contacts will require the optimal selection of the metal or alloy based on their bonding interactions with the MoS2 surface. This can be advanced by evaluation of binding energies with increasing the number of atoms within metal clusters.

02 Jul 11:39

Femtosecond valley polarization and topological resonances in transition metal dichalcogenides. (arXiv:1711.10454v2 [cond-mat.mes-hall] UPDATED)

by S. Azar Oliaei Motlagh, Jhih-Sheng Wu, Vadym Apalkov, Mark I. Stockman

We theoretically introduce the fundamentally fastest induction of a significant population and valley polarization in a monolayer of a transition metal dichalcogenide (i.e., $\mathrm{MoS_2}$ and $\mathrm{WS_2}$). This may be extended to other two-dimensional materials with the same symmetry. This valley polarization can be written and read-out by a pulse consisting of just a single optical oscillation with a duration of a few femtoseconds and an amplitude of $\sim0.2~\mathrm V/\mathrm{\AA}$. Under these conditions, we predict a new effect of {\em topological resonance}, which is due to Bloch motion of electrons in the reciprocal space where electron population textures are formed defined by non-Abelian Berry curvature. The predicted phenomena can be applied for information storage and processing in PHz-band optoelectronics.

02 Jul 11:39

Collision-dominated conductance in clean 2D metals. (arXiv:1806.11480v1 [cond-mat.mes-hall])

by A. Uzair, K. Sabeeh, Markus Mueller

We study the temperature-dependent corrections to the conductance due to electron-electron (e-e) interactions in clean two-dimensional conductors, such as lightly doped graphene or other Dirac matter. We use semiclassical Boltzmann kinetic theory to solve the problem of collision-dominated transport between reflection-free contacts. Time-reversal symmetry and the kinematic constraints of scattering in two dimensions (2D) ensure that inversion-odd and inversion-even distortions of the quasiparticle distribution relax with parametrically different rates at low temperature. This entails the surprising result that at lowest temperatures the conductance of very long samples tends to the noninteracting, ballistic conductance, despite the relaxation of the quasiparticle distribution to a drifting equilibrium. The relative correction to the conductance depends on the ratio of relaxation rates of even and odd modes and scales as delta G/G_{ballistic}~(T/E_F)[Log(E_F/T)]^{1/2}, in stark contrast to the behavior in other dimensionalities. This holds generally in 2D systems with simply connected and convex but otherwise arbitrary Fermi surfaces, as long as e-e scattering processes are dominant and umklapp scattering is negligible. These results are especially relevant to the bulk of wide and long suspended high-mobility graphene sheets.

02 Jul 11:38

Direct observation of ultrafast exciton formation in monolayer WSe$_2$. (arXiv:1806.11318v2 [cond-mat.mtrl-sci] UPDATED)

by Philipp Steinleitner, Philipp Merkl, Joshua Mornhinweg, Christian Schüller, Tobias Korn, Alexey Chernikov, Rupert Huber

Many of the fundamental optical and electronic properties of atomically thin transition metal dichalcogenides are dominated by strong Coulomb interactions between electrons and holes, forming tightly bound atom-like excitons. Here, we directly trace the ultrafast formation of excitons by monitoring the absolute densities of bound and unbound electron-hole pairs in monolayers of WSe$_2$ following femtosecond non-resonant optical excitation. To this end, phase-locked mid-infrared probe pulses and field-sensitive electro-optic sampling are used to map out the full complex-valued optical conductivity of the non-equilibrium system and to discern the hallmark low-energy responses of bound and unbound pairs. While free charge carriers strongly influence the infrared response immediately after above-bandgap injection, up to 60% of the electron-hole pairs are bound as excitons already on a sub-picosecond timescale, evidencing extremely fast and efficient exciton formation. During the subsequent recombination phase, we still find a large density of free carriers in addition to excitons, indicating a non-equilibrium state of the photoexcited electron-hole system.

29 Jun 11:14

[ASAP] Ultrafast Microscopy of Spin-Momentum-Locked Surface Plasmon Polaritons

by Yanan Dai, Maciej Dabrowski, Vartkess A. Apkarian, Hrvoje Petek

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ACS Nano
DOI: 10.1021/acsnano.8b01386