The transition metal dichalcogenide $1T$-TiSe$_2$ is a quasi-two-dimensional layered material with a phase transition towards a commensurate charge density wave (CDW) at a critical temperature T$_{c}\approx 200$K. The relationship between the origin of the CDW instability and the semimetallic or semiconducting character of the normal state, i.e., with the non-reconstructed Fermi surface topology, remains elusive. By combining angle-resolved photoemission spectroscopy (ARPES), scanning tunneling microscopy (STM), and density functional theory (DFT) calculations, we investigate $1T$-TiSe$_{2-x}$S$_x$ single crystals. Using STM, we first show that the long-range phase coherent CDW state is stable against S substitutions with concentrations at least up to $x=0.34$. The ARPES measurements then reveal a slow but continuous decrease of the overlap between the electron and hole ($e$-$h$) bands of the semimetallic normal-state well reproduced by DFT and related to slight reductions of both the CDW order parameter and $T_c$. Our DFT calculations further predict a semimetal-to-semiconductor transition of the normal state at a higher critical S concentration of $x_c$=0.9 $\pm$0.1, that coincides with a melted CDW state in TiSeS as measured with STM. Finally, we rationalize the $x$-dependence of the $e$-$h$ band overlap in terms of isovalent substitution-induced competing chemical pressure and charge localization effects. Our study highlights the key role of the $e$-$h$ band overlap for the CDW instability.
Alfred Jones
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Semimetal-to-semiconductor transition and charge-density-wave melting in $1T$-TiSe$_{2-x}$S$_x$ single crystals. (arXiv:1812.02047v1 [cond-mat.mtrl-sci])
Incommensurate Chiral CDW in $1T$-VSe$_2$. (arXiv:1812.01368v1 [cond-mat.str-el])
We have investigated the chiral charge-density wave (CDW) in $1T$-VSe$_2$ using scanning tunneling microscopy (STM) measurements and optical polarimetry measurements. With the STM mesurements, we revealed that the CDW intensities along each triple-$q$ directions are different. Thus the rotational symmetry of $1T$-VSe$_2$ is lower than that in typical two-dimentional triple-$q$ CDWs. We found that the CDW peaks form a kagome lattice rather than a triangular lattice. The Friedel oscillations have the chirality and the periodicity reflected properties of the background CDW. With the optical measurements in $1T$-VSe$_2$, we also observed a lower rotational symmetry with the polarization dependence of the transient reflectivity variation, which is consistent with the STM result on a microscopic scale. Both $1T$-TiSe$_2$ and $1T$-VSe$_2$ show chiral CDWs, which implies that such waves are usual for CDWs with the condition $H_\mathrm{CDW} \equiv q_{1}\cdot(q_{2} \times q_{3}) \neq0$.
Reproduction of the Charge Density Wave Phase Diagram in $1T\text{−}{\mathrm{TiSe}}_{2}$ Exposes its Excitonic Character
Author(s): Chuan Chen, Bahadur Singh, Hsin Lin, and Vitor M. Pereira
Recent experiments suggest that excitonic degrees of freedom play an important role in precipitating the charge density wave (CDW) transition in 1T−TiSe2. Through systematic calculations of the electronic and phonon spectrum based on density functional perturbation theory, we show that the predicted...
[Phys. Rev. Lett. 121, 226602] Published Thu Nov 29, 2018
Unique Gap Structure and Symmetry of the Charge Density Wave in Single-Layer ${\mathrm{VSe}}_{2}$
Author(s): P. Chen, Woei Wu Pai, Y.-H. Chan, V. Madhavan, M. Y. Chou, S.-K. Mo, A.-V. Fedorov, and T.-C. Chiang
Single layers of transition metal dichalcogenides (TMDCs) are excellent candidates for electronic applications beyond the graphene platform; many of them exhibit novel properties including charge density waves (CDWs) and magnetic ordering. CDWs in these single layers are generally a planar projectio...
[Phys. Rev. Lett. 121, 196402] Published Fri Nov 09, 2018
A setup for extreme-ultraviolet ultrafast angle-resolved photoelectron spectroscopy at 50-kHz repetition rate. (arXiv:1811.00715v2 [physics.ins-det] UPDATED)
Alfred JonesInteresting as a modern TR-ARPES instrument paper, but none of the advances seem particularly groundbreaking or interesting
Time- and angle-resolved photoelectron spectroscopy (trARPES) is a powerful method to track the ultrafast dynamics of quasiparticles and electronic bands in energy and momentum space. We present a setup for trARPES with 22.3 eV extreme-ultraviolet (XUV) femtosecond pulses at 50-kHz repetition rate, which enables fast data acquisition and access to dynamics across momentum space with high sensitivity. The design and operation of the XUV beamline, pump-probe setup, and UHV endstation are described in detail. By characterizing the effect of space-charge broadening, we determine an ultimate source-limited energy resolution of 60 meV, with typically 80-100 meV obtained at 1-2e10 photons/s probe flux on the sample. The instrument capabilities are demonstrated via both equilibrium and time-resolved ARPES studies of transition-metal dichalcogenides. The 50-kHz repetition rate enables sensitive measurements of quasiparticles at low excitation fluences in semiconducting MoSe$_2$, with an instrumental time resolution of 65 fs. Moreover, photo-induced phase transitions can be driven with the available pump fluence, as shown by charge density wave melting in 1T-TiSe$_2$. The high repetition-rate setup thus provides a versatile platform for sensitive XUV trARPES, from quenching of electronic phases down to the perturbative limit.
Experimental Observation of Hidden Berry Curvature in Inversion-Symmetric Bulk $2H\text{−}{\mathrm{WSe}}_{2}$
Author(s): Soohyun Cho, Jin-Hong Park, Jisook Hong, Jongkeun Jung, Beom Seo Kim, Garam Han, Wonshik Kyung, Yeongkwan Kim, S.-K. Mo, J. D. Denlinger, Ji Hoon Shim, Jung Hoon Han, Changyoung Kim, and Seung Ryong Park
We investigate the hidden Berry curvature in bulk 2H−WSe2 by utilizing the surface sensitivity of angle resolved photoemission (ARPES). The symmetry in the electronic structure of transition metal dichalcogenides is used to uniquely determine the local orbital angular momentum (OAM) contribution to ...
[Phys. Rev. Lett. 121, 186401] Published Mon Oct 29, 2018
Ultrafast manipulation of mirror domain walls in a charge density wave. (arXiv:1810.11129v1 [cond-mat.mtrl-sci])
Domain walls (DWs) are singularities in an ordered medium that often host exotic phenomena such as charge ordering, insulator-metal transition, or superconductivity. The ability to locally write and erase DWs is highly desirable, as it allows one to design material functionality by patterning DWs in specific configurations. We demonstrate such capability at room temperature in a charge density wave (CDW), a macroscopic condensate of electrons and phonons, in ultrathin 1T-TaS$_2$. A single femtosecond light pulse is shown to locally inject or remove mirror DWs in the CDW condensate, with probabilities tunable by pulse energy and temperature. Using time-resolved electron diffraction, we are able to simultaneously track anti-synchronized CDW amplitude oscillations from both the lattice and the condensate, where photo-injected DWs lead to a red-shifted frequency. Our demonstration of reversible DW manipulation may pave new ways for engineering correlated material systems with light.
Defect-Induced Modification of Low-Lying Excitons and Valley Selectivity in Monolayer Transition Metal Dichalcogenides
Author(s): Sivan Refaely-Abramson, Diana Y. Qiu, Steven G. Louie, and Jeffrey B. Neaton
We study the effect of point-defect chalcogen vacancies on the optical properties of monolayer transition metal dichalcogenides using ab initio GW and Bethe-Salpeter equation calculations. We find that chalcogen vacancies introduce unoccupied in-gap states and occupied resonant defect states within ...
[Phys. Rev. Lett. 121, 167402] Published Tue Oct 16, 2018
Role of matrix elements in the time-resolved photoemission signal. (arXiv:1810.06571v1 [cond-mat.mtrl-sci])
Time- and angle-resolved photoemission spectroscopy accesses the ultrafast evolution of quasiparticles and many-body interactions in solid-state systems. However, the momentum- and energy-resolved transient photoemission intensity may not be unambiguously related to the intrinsic relaxation dynamics of photoexcited electrons. In fact, interpretation of the time-dependent photoemission signal can be affected by the transient evolution of both the one-electron removal spectral function as well as the photoemission dipole matrix elements. Here we investigate the topological insulator Bi$_{1.1}$Sb$_{0.9}$Te$_2$S to demonstrate, by means of a careful probe-polarization study, the transient contribution of matrix elements to the time-resolved photoemission signal.
Pseudogap, Fermi arc, and Peierls-insulating phase induced by 3D-2D crossover in monolayer VSe2. (arXiv:1810.02511v1 [cond-mat.mtrl-sci])
One of important challenges in condensed-matter physics is to realize new quantum states of matter by manipulating the dimensionality of materials, as represented by the discovery of high-temperature superconductivity in atomic-layer pnictides and room-temperature quantum Hall effect in graphene. Transition-metal dichalcogenides (TMDs) provide a fertile platform for exploring novel quantum phenomena accompanied by the dimensionality change, since they exhibit a variety of electronic/magnetic states owing to quantum confinement. Here we report an anomalous metal-insulator transition induced by 3D-2D crossover in monolayer 1T-VSe2 grown on bilayer graphene. We observed a complete insulating state with a finite energy gap on the entire Fermi surface in monolayer 1T-VSe2 at low temperatures, in sharp contrast to metallic nature of bulk. More surprisingly, monolayer 1T-VSe2 exhibits a pseudogap with Fermi arc at temperatures above the charge-density-wave temperature, showing a close resemblance to high-temperature cuprates. This similarity suggests a common underlying physics between two apparently different systems, pointing to the importance of charge/spin fluctuations to create the novel electronic states, such as pseudogap and Fermi arc, in these materials.
[ASAP] Quantum Hall Effect in Electron-Doped Black Phosphorus Field-Effect Transistors
An inconsistent friend
Alfred JonesNot relevant, but is too ridiculous not to share.
An inconsistent friend
An inconsistent friend, Published online: 18 September 2018; doi:10.1038/s41567-018-0293-7
Are there limits to the applicability of textbook quantum theory? Experiments haven’t found any yet, but a new theoretical analysis shows that treating your colleagues as quantum systems might be a step too far.Biexcitonic optical Stark effects in monolayer molybdenum diselenide
Biexcitonic optical Stark effects in monolayer molybdenum diselenide
Biexcitonic optical Stark effects in monolayer molybdenum diselenide, Published online: 30 July 2018; doi:10.1038/s41567-018-0216-7
Light–matter interactions in monolayer MoSe2 can be dramatically modified by the interactions between the excitonic states, leading to a rich set of light-driven coherent phenomena.[ASAP] Resolving Deep Quantum-Well States in Atomically Thin 2H-MoTe2 Flakes by Nanospot Angle-Resolved Photoemission Spectroscopy
An Inside Look at the Ti-MoS2 Contact in Ultra-thin Field Effect Transistor with Atomic Resolution. (arXiv:1807.01377v1 [cond-mat.mtrl-sci])
Two-dimensional molybdenum disulfide (MoS2) is an excellent channel material for ultra-thin field effect transistors. However, high contact resistance across the metal-MoS2 interface continues to limit its widespread realization. Here, using atomic-resolution analytical scanning transmission electron microscopy (STEM) together with first principle calculations, we show that this contact problem is a fundamental limitation from the bonding and interactions at the metal-MoS2 interface that cannot be solved by improved deposition engineering. STEM analysis in conjunction with theory shows that when MoS2 is in contact with Ti, a metal with a high affinity to form strong bonds with sulfur, there is a release of S from Mo along with the formation of small Ti/TixSy clusters. A destruction of the MoS2 layers and penetration of metal can also be expected. The design of true high-mobility metal-MoS2 contacts will require the optimal selection of the metal or alloy based on their bonding interactions with the MoS2 surface. This can be advanced by evaluation of binding energies with increasing the number of atoms within metal clusters.
Femtosecond valley polarization and topological resonances in transition metal dichalcogenides. (arXiv:1711.10454v2 [cond-mat.mes-hall] UPDATED)
We theoretically introduce the fundamentally fastest induction of a significant population and valley polarization in a monolayer of a transition metal dichalcogenide (i.e., $\mathrm{MoS_2}$ and $\mathrm{WS_2}$). This may be extended to other two-dimensional materials with the same symmetry. This valley polarization can be written and read-out by a pulse consisting of just a single optical oscillation with a duration of a few femtoseconds and an amplitude of $\sim0.2~\mathrm V/\mathrm{\AA}$. Under these conditions, we predict a new effect of {\em topological resonance}, which is due to Bloch motion of electrons in the reciprocal space where electron population textures are formed defined by non-Abelian Berry curvature. The predicted phenomena can be applied for information storage and processing in PHz-band optoelectronics.
Collision-dominated conductance in clean 2D metals. (arXiv:1806.11480v1 [cond-mat.mes-hall])
We study the temperature-dependent corrections to the conductance due to electron-electron (e-e) interactions in clean two-dimensional conductors, such as lightly doped graphene or other Dirac matter. We use semiclassical Boltzmann kinetic theory to solve the problem of collision-dominated transport between reflection-free contacts. Time-reversal symmetry and the kinematic constraints of scattering in two dimensions (2D) ensure that inversion-odd and inversion-even distortions of the quasiparticle distribution relax with parametrically different rates at low temperature. This entails the surprising result that at lowest temperatures the conductance of very long samples tends to the noninteracting, ballistic conductance, despite the relaxation of the quasiparticle distribution to a drifting equilibrium. The relative correction to the conductance depends on the ratio of relaxation rates of even and odd modes and scales as delta G/G_{ballistic}~(T/E_F)[Log(E_F/T)]^{1/2}, in stark contrast to the behavior in other dimensionalities. This holds generally in 2D systems with simply connected and convex but otherwise arbitrary Fermi surfaces, as long as e-e scattering processes are dominant and umklapp scattering is negligible. These results are especially relevant to the bulk of wide and long suspended high-mobility graphene sheets.
Direct observation of ultrafast exciton formation in monolayer WSe$_2$. (arXiv:1806.11318v2 [cond-mat.mtrl-sci] UPDATED)
Many of the fundamental optical and electronic properties of atomically thin transition metal dichalcogenides are dominated by strong Coulomb interactions between electrons and holes, forming tightly bound atom-like excitons. Here, we directly trace the ultrafast formation of excitons by monitoring the absolute densities of bound and unbound electron-hole pairs in monolayers of WSe$_2$ following femtosecond non-resonant optical excitation. To this end, phase-locked mid-infrared probe pulses and field-sensitive electro-optic sampling are used to map out the full complex-valued optical conductivity of the non-equilibrium system and to discern the hallmark low-energy responses of bound and unbound pairs. While free charge carriers strongly influence the infrared response immediately after above-bandgap injection, up to 60% of the electron-hole pairs are bound as excitons already on a sub-picosecond timescale, evidencing extremely fast and efficient exciton formation. During the subsequent recombination phase, we still find a large density of free carriers in addition to excitons, indicating a non-equilibrium state of the photoexcited electron-hole system.


