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04 May 01:27

Transistors: Ultrahigh Mobility in Solution-Processed Solid-State Electrolyte-Gated Transistors (Adv. Mater. 16/2017)

by Benjamin Nketia-Yawson, Seok-Ju Kang, Grace Dansoa Tabi, Andrea Perinot, Mario Caironi, Antonio Facchetti, Yong-Young Noh
Thumbnail image of graphical abstract

A new concept of a high-capacitance flexible polymeric dielectric based on P(VDF-TrFE):P(VDF-HFP)-[EMIM] [TFSI] blends is reported by Yong-Young Noh and co-workers in article number 1605685. This solid-state electrolyte gate insulator enables remarkable field-effect mobilities exceeding 10 cm2 V−1 s−1 at Vg ≤ 2 V for common conjugated polymer, amorphous metal oxide, and carbon nanotube semiconductors. Such an impressive performance is achieved by a high areal capacitance of >4 μF cm−2 owing to the combined polarization of [BOND]C[BOND]F interface dipoles and electrical-double-layer formation.