ACS Nano
DOI: 10.1021/acsnano.9b05722
Xingxing Zhang
Shared posts
13 Nov 13:39
[ASAP] Direct Epitaxial Synthesis of Selective Two-Dimensional Lateral Heterostructures
by Juwon Lee†¶, Sangyeon Pak‡¶, Young-Woo Lee§, Youngsin Park?, A-Rang Jang†?, John Hong†, Yuljae Cho†#, Bo Hou†#, Sanghyo Lee†#, Hu Young Jeong?, Hyeon Suk Shin?, Stephen M. Morris†, SeungNam Cha*‡, Jung Inn Sohn*†?, and Jong Min Kim#
04 Nov 02:31
[ASAP] Recent Advances in Electrocatalytic Hydrogen Evolution Using Nanoparticles
by Jing Zhu†, Liangsheng Hu*‡§, Pengxiang Zhao*†, Lawrence Yoon Suk Lee‡, and Kwok-Yin Wong*‡
Chemical Reviews
DOI: 10.1021/acs.chemrev.9b00248
04 Nov 02:24
[ASAP] Orbital Character Effects in the Photon Energy and Polarization Dependence of Pure C60 Photoemission
by Drew W. Latzke†‡?, Claudia Ojeda-Aristizabal*#?, Jonathan D. Denlinger§, Ryan Reno#, Alex Zettl†‡?, and Alessandra Lanzara*‡?
ACS Nano
DOI: 10.1021/acsnano.9b04536
Xingxing Zhang, liuxinye likes this
04 Nov 02:17
[ASAP] Conductive and Catalytic VTe2@MgO Heterostructure as Effective Polysulfide Promotor for Lithium–Sulfur Batteries
by Menglei Wang†?, Yingze Song†?, Zhongti Sun†?, Yuanlong Shao‡, Chaohui Wei†, Zhou Xia†, Zhengnan Tian†, Zhongfan Liu*†§?, and Jingyu Sun*†§
ACS Nano
DOI: 10.1021/acsnano.9b06267
zhulj, Xingxing Zhang and 2 others like this
04 Nov 02:10
[ASAP] Large Anomalous Nernst Effect in a van der Waals Ferromagnet Fe3GeTe2
by Jinsong Xu*†, W. Adam Phelan‡, and Chia-Ling Chien†
Nano Letters
DOI: 10.1021/acs.nanolett.9b03739
04 Nov 02:10
[ASAP] Optically Driven Magnetic Phase Transition of Monolayer RuCl3
by Yingzhen Tian†?, Weiwei Gao‡?, Erik A. Henriksen†, James R. Chelikowsky*‡§?, and Li Yang*†
Nano Letters
DOI: 10.1021/acs.nanolett.9b02523
jiaocw, Alex Strasser and 4 others like this
04 Nov 02:08
[ASAP] Reversible MoS2 Origami with Spatially Resolved and Reconfigurable Photosensitivity
by Weinan Xu†?, Tengfei Li‡, Zhao Qin§?, Qi Huang†, Hui Gao??, Kibum Kang??, Jiwoong Park?, Markus J. Buehler§, Jacob B. Khurgin‡, and David H. Gracias*†#
Nano Letters
DOI: 10.1021/acs.nanolett.9b03107
Alex Strasser, zhulj and 2 others like this
04 Nov 02:02
Emerging Applications of Elemental 2D Materials
by Nicholas R. Glavin,
Rahul Rao,
Vikas Varshney,
Elisabeth Bianco,
Amey Apte,
Ajit Roy,
Emilie Ringe,
Pulickel M. Ajayan
Elemental 2D materials are some of the more exciting nanomaterials of interest due to their unique and tailorable properties. Recent progress in these exciting materials relative to their potential impact in applications including electronics, optoelectronics, and energy systems is presented.
Abstract
As elemental main group materials (i.e., silicon and germanium) have dominated the field of modern electronics, their monolayer 2D analogues have shown great promise for next‐generation electronic materials as well as potential game‐changing properties for optoelectronics, energy, and beyond. These atomically thin materials composed of single atomic variants of group III through group VI elements on the periodic table have already demonstrated exciting properties such as near‐room‐temperature topological insulation in bismuthene, extremely high electron mobilities in phosphorene and silicone, and substantial Li‐ion storage capability in borophene. Isolation of these materials within the postgraphene era began with silicene in 2010 and quickly progressed to the experimental identification or theoretical prediction of 15 of the 18 main group elements existing as solids at standard pressure and temperatures. This review first focuses on the significance of defects/functionalization, discussion of different allotropes, and overarching structure–property relationships of 2D main group elemental materials. Then, a complete review of emerging applications in electronics, sensing, spintronics, plasmonics, photodetectors, ultrafast lasers, batteries, supercapacitors, and thermoelectrics is presented by application type, including detailed descriptions of how the material properties may be tailored toward each specific application.
04 Nov 01:59
[ASAP] Quest for p-Type Two-Dimensional Semiconductors
by Qiyuan He†, Yuan Liu‡, Chaoliang Tan†, Wei Zhai§, Gwang-hyeon Nam†, and Hua Zhang*§†
ACS Nano
DOI: 10.1021/acsnano.9b07618
27 Oct 12:05
Seed‐Initiated Synthesis and Tunable Doping Graphene for High‐Performance Photodetectors
by Jiurong Li,
Siwei Yang,
Gang Wang,
Tao Huang,
Qinglei Guo,
Zhiduo Liu,
Peng He,
Xiaohu Zheng,
Yongqiang Wang,
Anli Xu,
Menghan Zhao,
Wei Zhu,
Da Chen,
Guqiao Ding
By taking advantage of the dual metal substrate of the Ni‐coated Cu foils, the precise control of layer number of graphene by ion implantation has been demonstrated and the layer number of graphene strictly corresponds to the implantation fluence as expected. Besides, the formation mechanism is explored by the experimental analysis in detail and confirmed by the theoretical calculations.
Abstract
Due to the promising utilizations in nanoelectronics, doping‐tunable graphene is paid extensive attentions. Nevertheless, a harmless approach to dope/co‐dope graphene in a controllable and easy way with low cost is still unattainable. Herein, through seeding of 0D N & S dual‐doped graphene quantum dots (N & S dual‐doped GQDs) on a catalytic substrate and then dynamic chemical vapor deposition (CVD), a monolayered dual‐doped graphene film is demonstrated. The concentrations of dopants in graphene are strictly discerned in accordance with preliminary seeding for dual‐doped GQDs. Through the monitoring of growing process, the research elucidates the growth mechanism of the graphene, and unveils that dual‐doped GQDs can serve as the nucleation centers for creating doped‐graphene films by 2D epitaxial growth and thus graphene with designed dopant concentration can be obtained. Finally, the photodetector built on N & S dual‐doped graphene film is found to perform satisfactorily, accompanying high detectivity (≈1.42 × 1010 cm Hz1/2 W−1) and responsivity (61 mA W−1), at wavelength of 1550 nm. The research proposes a dexterous approach for synthesizing tunably doped graphene films by the combination of locally controlled nucleation seeds and in situ CVD, which lays the foundation for applying graphene in industries of photonic and electronic devices.
22 Oct 10:57
[ASAP] Colloidal Gelation in Liquid Metals Enables Functional Nanocomposites of 2D Metal Carbides (MXenes) and Lightweight Metals
by Vladislav Kamysbayev†, Nicole M. James†, Alexander S. Filatov†, Vishwas Srivastava†, Babak Anasori‡#, Heinrich M. Jaeger§, Yury Gogotsi‡, and Dmitri V. Talapin*†?
ACS Nano
DOI: 10.1021/acsnano.9b06207
Charles Swun, zhulj and one other like this
22 Oct 10:56
[ASAP] Strong Thermopower Enhancement and Tunable Power Factor via Semimetal to Semiconductor Transition in a Transition-Metal Dichalcogenide
by Hongjae Moon†, Joonho Bang‡, Seokkyoon Hong†, Gwansik Kim†, Jong Wook Roh§, Jeongmin Kim*†, and Wooyoung Lee*†
ACS Nano
DOI: 10.1021/acsnano.9b06523
jingjiniao, zhulj and one other like this
22 Oct 10:52
[ASAP] Engineering Magnetic Phases in Two-Dimensional Non-van der Waals Transition-Metal Oxides
by Arkamita Bandyopadhyay†, Nathan C. Frey†, Deep Jariwala†‡, and Vivek B. Shenoy*†
Nano Letters
DOI: 10.1021/acs.nanolett.9b02801
zhulj, jinzhitong and 2 others like this
22 Oct 10:46
Van der Waals Heterostructures for High‐Performance Device Applications: Challenges and Opportunities
by Shi‐Jun Liang,
Bin Cheng,
Xinyi Cui,
Feng Miao
The diverse properties of van der Waals heterostructures open unprecedented opportunities for various types of device applications inaccessible in conventional heterostructure materials. Research progress of vertical heterostructure device applications in vertical transistors, infrared photodetectors, and spintronic devices is reviewed, together with a discussion on the challenges and opportunities in the future development of multifunctional devices.
Abstract
The discovery of two‐dimensional (2D) materials with unique electronic, superior optoelectronic, or intrinsic magnetic order has triggered worldwide interest in the fields of material science, condensed matter physics, and device physics. Vertically stacking 2D materials with distinct electronic and optical as well as magnetic properties enables the creation of a large variety of van der Waals heterostructures. The diverse properties of the vertical heterostructures open unprecedented opportunities for various kinds of device applications, e.g., vertical field‐effect transistors, ultrasensitive infrared photodetectors, spin‐filtering devices, and so on, which are inaccessible in conventional material heterostructures. Here, the current status of vertical heterostructure device applications in vertical transistors, infrared photodetectors, and spintronic memory/transistors is reviewed. The relevant challenges for achieving high‐performance devices are presented. An outlook into the future development of vertical heterostructure devices with integrated electronic and optoelectronic as well as spintronic functionalities is also provided.
22 Oct 10:46
Exploring Approaches for the Synthesis of Few‐Layered Graphdiyne
by Jingyuan Zhou,
Jiaqiang Li,
Zhongfan Liu,
Jin Zhang
The state‐of‐art research of graphdiyne (GDY) with a focus on exploring approaches for few‐layered GDY synthesis is critically summarized. The obstacles and challenges of GDY synthesis are also analyzed in detail. The advantages and limitations of different methods are analyzed comprehensively. These synthetic methods provide considerable inspiration to approaching the synthesis of single/few‐layered GDY film.
Abstract
Graphdiyne (GDY) is an emerging carbon allotrope in the graphyne (GY) family, demonstrating extensive potential applications in the fields of electronic devices, catalysis, electrochemical energy storage, and nonlinear optics. Synthesis of few‐layered GDY is especially important for both electronic applications and structural characterization. This work critically summarizes the state‐of‐art of GDY and focuses on exploring approaches for few‐layered GDY synthesis. The obstacles and challenges of GDY synthesis are also analyzed in detail. Recently developed synthetic methods are discussed such as i) the copper substrate‐based method, ii) the chemical vapor deposition (CVD) method, iii) the interfacial construction method, and iv) the graphene‐templated method. Throughout the discussion, the superiorities and limitations of different methods are analyzed comprehensively. These synthetic methods have provided considerable inspiration approaching synthesis of few‐layered or single‐layered GDY film. The work concludes with a perspective on promising research directions and remaining barriers for layer‐controlled and morphology‐controlled synthesis of GDY with higher crystalline quality.
zhulj, Xingxing Zhang likes this
22 Oct 10:44
Chemically Tuned p‐ and n‐Type WSe2 Monolayers with High Carrier Mobility for Advanced Electronics
by Hyun Goo Ji,
Pablo Solís‐Fernández,
Daisuke Yoshimura,
Mina Maruyama,
Takahiko Endo,
Yasumitsu Miyata,
Susumu Okada,
Hiroki Ago
Selective tuning of ambipolar WSe2 monolayer to p‐ and n‐type semiconductors by chemical doping is demonstrated. The chemical doping not only allows to control over the main charge carriers, but also increases the carrier mobility of the WSe2 significantly. Furthermore, a complementary metal‐oxide‐semiconductor inverter and an in‐plane p–n junction with superior performance are successfully fabricated by integrating the chemically doped WSe2.
Abstract
Monolayers of transition metal dichalcogenides (TMDCs) have attracted a great interest for post‐silicon electronics and photonics due to their high carrier mobility, tunable bandgap, and atom‐thick 2D structure. With the analogy to conventional silicon electronics, establishing a method to convert TMDC to p‐ and n‐type semiconductors is essential for various device applications, such as complementary metal‐oxide‐semiconductor (CMOS) circuits and photovoltaics. Here, a successful control of the electrical polarity of monolayer WSe2 is demonstrated by chemical doping. Two different molecules, 4‐nitrobenzenediazonium tetrafluoroborate and diethylenetriamine, are utilized to convert ambipolar WSe2 field‐effect transistors (FETs) to p‐ and n‐type, respectively. Moreover, the chemically doped WSe2 show increased effective carrier mobilities of 82 and 25 cm2 V−1s−1 for holes and electrons, respectively, which are much higher than those of the pristine WSe2. The doping effects are studied by photoluminescence, Raman, X‐ray photoelectron spectroscopy, and density functional theory. Chemically tuned WSe2 FETs are integrated into CMOS inverters, exhibiting extremely low power consumption (≈0.17 nW). Furthermore, a p‐n junction within single WSe2 grain is realized via spatially controlled chemical doping. The chemical doping method for controlling the transport properties of WSe2 will contribute to the development of TMDC‐based advanced electronics.
zhulj, Xingxing Zhang likes this
22 Oct 10:41
SnSe/MoS2 van der Waals Heterostructure Junction Field‐Effect Transistors with Nearly Ideal Subthreshold Slope
by Jian Guo,
Laiyuan Wang,
Yiwei Yu,
Peiqi Wang,
Yu Huang,
Xiangfeng Duan
A 2D SnSe/MoS2 van der Waals heterostructure‐based junction field‐effect transistor (JFET) is constructed and systematically studied. It exhibits well‐behaviored n‐channel JFET characteristics with a nearly ideal subthreshold swing SS of 60.3 mV dec−1, a small pinch‐off voltage V P of −0.25 V, and high ON/OFF ratio over 106, demonstrating excellent electronic performance especially in the subthreshold regime.
Abstract
The minimization of the subthreshold swing (SS) in transistors is essential for low‐voltage operation and lower power consumption, both critical for mobile devices and internet of things (IoT) devices. The conventional metal‐oxide‐semiconductor field‐effect transistor requires sophisticated dielectric engineering to achieve nearly ideal SS (60 mV dec−1 at room temperature). However, another type of transistor, the junction field‐effect transistor (JFET) is free of dielectric layer and can reach the theoretical SS limit without complicated dielectric engineering. The construction of a 2D SnSe/MoS2 van der Waals (vdW) heterostructure‐based JFET with nearly ideal SS is reported. It is shown that the SnSe/MoS2 vdW heterostructure exhibits excellent p–n diode rectifying characteristics with low saturate current. Using the SnSe as the gate and MoS2 as the channel, the SnSe/MoS2 vdW heterostructure exhibit well‐behavioured n‐channel JFET characteristics with a small pinch‐off voltage V P of −0.25 V, nearly ideal subthreshold swing SS of 60.3 mV dec−1 and high ON/OFF ratio over 106, demonstrating excellent electronic performance especially in the subthreshold regime.
zhulj, Xingxing Zhang likes this
22 Oct 10:41
High‐Performance Thermally Conductive Phase Change Composites by Large‐Size Oriented Graphite Sheets for Scalable Thermal Energy Harvesting
by Si Wu,
Tingxian Li,
Zhen Tong,
Jingwei Chao,
Tianyao Zhai,
Jiaxing Xu,
Taisen Yan,
Minqiang Wu,
Zhenyuan Xu,
Hua Bao,
Tao Deng,
Ruzhu Wang
A method for synthesizing high‐performance thermally conductive phase‐ change composites is demonstrated. Large aligned graphite sheets inside the composite are generated from worm‐like expanded graphite. The aligned and interconnected graphite framework enhances K PCM up to 4.4–35.0 W m−1 K−1 at graphite loadings below 40.0 wt%, which may accelerate the high‐power‐density, low‐cost, and large‐scale applications of phase‐change materials.
Abstract
Efficient thermal energy harvesting using phase‐change materials (PCMs) has great potential for cost‐effective thermal management and energy storage applications. However, the low thermal conductivity of PCMs (K PCM) is a long‐standing bottleneck for high‐power‐density energy harvesting. Although PCM‐based nanocomposites with an enhanced thermal conductivity can address this issue, achieving a higher K (>10 W m−1 K−1) at filler loadings below 50 wt% remains challenging. A strategy for synthesizing highly thermally conductive phase‐change composites (PCCs) by compression‐induced construction of large aligned graphite sheets inside PCCs is demonstrated. The millimeter‐sized graphite sheet consists of lateral van‐der‐Waals‐bonded and oriented graphite nanoplatelets at the micro/nanoscale, which together with a thin PCM layer between the sheets synergistically enhance K PCM in the range of 4.4–35.0 W m−1 K−1 at graphite loadings below 40.0 wt%. The resulting PCCs also demonstrate homogeneity, no leakage, and superior phase change behavior, which can be easily engineered into devices for efficient thermal energy harvesting by coordinating the sheet orientation with the thermal transport direction. This method offers a promising route to high‐power‐density and low‐cost applications of PCMs in large‐scale thermal energy storage, thermal management of electronics, etc.
zhulj, Xingxing Zhang and one other like this
14 Oct 13:26
Engineering Ultrafast Carrier Dynamics at the Graphene/GaAs Interface by Bulk Doping Level
by Jinghuan Yang,
Quan Sun,
Wei Liu,
Zhibin Zhang,
Xiaoyong Hu,
Kaihui Liu,
Hong Yang,
Hiroaki Misawa,
Qihuang Gong
The direct observation on the modulation of ultrafast carrier dynamics at the graphene/gallium arsenide (GaAs) interface can be realized. Changing the bending direction of the bulk band at the interface by tuning the doping level can steer the hot‐carrier transfer in the spatial dimension and change the lifetime of the excited electrons in graphene by nearly six times.
Abstract
Carrier dynamics, the most fundamental process in electronics and optoelectronics, has drawn great attentions owing to its crucial role in property engineering of materials. Exploration and regulation of carrier dynamics are essential for designing devices with specific functions and optimizing their performances. However, the lack of conventional tools with simultaneous ultrafast temporal and ultrasmall spatial resolution has impeded direct observation and manipulation of carrier dynamics at both the femtosecond and nanometer scale. In this study, the direct observation and modulation of ultrafast carrier dynamics at the graphene/gallium arsenide (GaAs) interface is achieved by tuning the doping level of bulk GaAs. This successful characterization is performed using advanced in situ photoemission electron microscopy combined with the ultrafast pump–probe technique. It is found that a change in the doping level in GaAs can change its band bending and switch the hot‐carrier transfer direction at the graphene/GaAs interface with a lifetime reduction of nearly six times. This work paves the way of engineering ultrafast carrier dynamics at 2D interfaces by modifying the 3D bulk properties, and also provides a platform for fundamental studies of ultrafast physics with high spatial resolution.
zhulj, Xingxing Zhang likes this
14 Oct 13:26
Polariton Photonics Using Structured Metals and 2D Materials
by Ziqiang Cai,
Yihao Xu,
Chuangtang Wang,
Yongmin Liu
The highlights of the works published in recent years on the topic of polariton photonics based on structured metals, graphene, and other 2D van der Waals materials, are reviewed here. The exotic optical properties of the polaritons in metallic structures and 2D materials offer bright prospects for the development of high‐performance photonic and optoelectronic devices.
Abstract
Polaritons are quasiparticles originating from strong interactions between photons and elementary excitations that could enable high tunability, tight electromagnetic field confinement, and large density of photonic states, making it possible to achieve novel and otherwise inaccessible functionalities. For these reasons, polaritons spawn great interest in the fields of physics, materials science, and optics for both fundamental studies as well as potential applications (e.g., modulators, photodetectors, photoluminescence, etc.). In recent years, the explosive growth of research in graphene and other 2D van der Waals materials is witnessed because they provide a new platform that substantially complements conventional metals, dielectrics, and semiconductors to investigate different polariton modes. This review highlights the works published in recent years on the topic of polariton photonics based on structured metals, graphene, and transition‐metal dichalcogenides (TMDs). The exotic optical properties of the polaritons in metallic structures and 2D van der Waals materials offer bright prospects for the development of high‐performance photonic and optoelectronic devices.
zhulj, Xingxing Zhang likes this
14 Oct 13:25
[ASAP] Tailored Nanopatterning by Controlled Continuous Nanoinscribing with Tunable Shape, Depth, and Dimension
by Dong Kyo Oh†#, Seungjo Lee†#, Seung Hu Lee‡#, Wonseok Lee†, Gyubeom Yeon†, Nayeong Lee†§, Kang-Soo Han?, Sunmin Jung†, Dong Ha Kim†, Dae-Young Lee?, Sang Hoon Lee†§, Hui Joon Park*?, and Jong G. Ok*†
ACS Nano
DOI: 10.1021/acsnano.9b04221
zhulj, Xingxing Zhang likes this
14 Oct 13:24
[ASAP] Sculpting Liquids with Two-Dimensional Materials: The Assembly of Ti3C2Tx MXene Sheets at Liquid–Liquid Interfaces
by Jeffrey D. Cain†‡§, Amin Azizi†§, Kathleen Maleski??, Babak Anasori???, Emily C. Glazer†‡§, Paul Y. Kim‡, Yury Gogotsi??, Brett A. Helms‡#, Thomas P. Russell‡¶?, and Alex Zettl*†‡§
ACS Nano
DOI: 10.1021/acsnano.9b05088
12 Oct 09:20
Anomalous phase transition behavior in hydrothermal grown layered tellurene
Nanoscale, 2019, 11,20245-20251
DOI: 10.1039/C9NR06637C, Paper
DOI: 10.1039/C9NR06637C, Paper
Han Li, Kedi Wu, Sijie Yang, Tara Boland, Bin Chen, Arunima K. Singh, Sefaattin Tongay
Recent studies have demonstrated that tellurene is a van der Waals (vdW) two-dimensional material with potential optoelectronic and thermoelectric applications as a result of its pseudo-one-dimensional structure and properties.
The content of this RSS Feed (c) The Royal Society of Chemistry
Recent studies have demonstrated that tellurene is a van der Waals (vdW) two-dimensional material with potential optoelectronic and thermoelectric applications as a result of its pseudo-one-dimensional structure and properties.
The content of this RSS Feed (c) The Royal Society of Chemistry
zhulj, Xingxing Zhang likes this
08 Oct 02:28
Anomalous Broadband Spectrum Photodetection in 2D Rhenium Disulfide Transistor
by Du Xiang,
Tao Liu,
Junyong Wang,
Peng Wang,
Lin Wang,
Yue Zheng,
Yanan Wang,
Jing Gao,
Kah‐Wee Ang,
Goki Eda,
Weida Hu,
Lei Liu,
Wei Chen
The bolometric effect‐induced photoresponse in ReS2 transistor is revealed by an anomalous sign switching of photocurrent from positive to negative while increasing gate voltage under visible light, which is further validated by the temperature dependent electrical transport measurement. This enables sub‐bandgap photodetection in the infrared regime with fast response speed and low noise equivalent power.
Abstract
2D transition metal dichalcogenide (TMD)‐based phototransistors generally work under photoconductive, photovoltaic, or photogating mode, in which photocarriers are generated from band‐to‐band excitation. Nevertheless, due to the relatively large bandgap, most TMD phototransistors working under these modes are restricted in visible spectrum. Here, photodetection in 2D multilayer rhenium disulfide (ReS2) transistor via bolometric mode, which relies on light heating induced conductance change instead of band‐to‐band photoexcitation is reported, making it possible for sub‐bandgap photon detection. The bolometric effect induced photoresponse is first revealed by an anomalous sign switching of photocurrent from positive to negative while increasing gate voltage under visible light, which is further validated by the temperature dependent electrical transport measurements. The phototransistor exhibits remarkable photoresponse under infrared regime, beyond the optical bandgap absorption edge of the ReS2 flake. Additionally, it demonstrates a low noise equivalent power, less than 5 × 10−2 pW Hz−1/2, which is very promising for ultra‐weak light detection. Moreover, the response time is below 3 ms, nearly 3–4 orders of magnitude faster than previously reported ReS2 photodetectors. The findings promise bolometric effect as an effective photodetection mode to extend the response spectrum of large bandgap TMDs for novel and high‐performance broadband photodetectors.
zhulj, Xingxing Zhang likes this
08 Oct 02:28
[ASAP] Flexible Two-Dimensional Ti3C2 MXene Films as Thermoacoustic Devices
by Guang-Yang Gou†‡?, Ming Liang Jin§??, Byeong-Joo Lee§?, He Tian*†‡?, Fan Wu†‡, Yu-Tao Li†‡, Zhen-Yi Ju†‡, Jing-Ming Jian†‡, Xiang-Shun Geng†‡, Jun Ren†‡, YuHong Wei†‡, Guang-Ya Jiang†‡, YanCong Qiao†‡, XiaoShi Li†‡, Seon Joon Kim?, Min Gao#, Hee-Tae Jung?, Chi Won Ahn*§, Yi Yang*†‡, and Tian-Ling Ren*†‡
ACS Nano
DOI: 10.1021/acsnano.9b03889
zhulj, Xingxing Zhang likes this
08 Oct 02:26
[ASAP] Tunable Chemical Coupling in Two-Dimensional van der Waals Electrostatic Heterostructures
by Takaaki Taniguchi*†, Shisheng Li†, Leanddas Nurdiwijayanto†, Yu Kobayashi‡, Tetsuki Saito‡, Yasumitsu Miyata‡, Seiji Obata§, Koichiro Saiki§, Hiroyuki Yokoi?, Kenji Watanabe?, Takashi Taniguchi?, Kazuhito Tsukagoshi†, Yasuo Ebina†, Takayoshi Sasaki†, and Minoru Osada†#
ACS Nano
DOI: 10.1021/acsnano.9b04256
Oleksandr, jingjiniao and 2 others like this
08 Oct 02:26
[ASAP] Probing and Manipulating Carrier Interlayer Diffusion in van der Waals Multilayer by Constructing Type-I Heterostructure
by Weihao Zheng†‡?, Biyuan Zheng†‡?, Ying Jiang‡?, Changlin Yan†§, Shula Chen†, Ying Liu†, Xinxia Sun†, Chenguang Zhu†, Zhaoyang Qi‡, Tiefeng Yang‡, Wei Huang‡, Peng Fan‡, Feng Jiang‡, Xiaoxia Wang‡, Xiujuan Zhuang‡, Dong Li†, Ziwei Li†, Wei Xie?, Wei Ji§, Xiao Wang*‡, and Anlian Pan*†‡
Nano Letters
DOI: 10.1021/acs.nanolett.9b02824
zhulj, Xingxing Zhang and one other like this
08 Oct 02:25
[ASAP] Magnetic Proximity Coupling of Quantum Emitters in WSe2 to van der Waals Ferromagnets
by Kamran Shayan†‡, Na Liu†‡, Andrew Cupo§, Yichen Ma†‡, Yue Luo†‡, Vincent Meunier§, and Stefan Strauf*†‡
Nano Letters
DOI: 10.1021/acs.nanolett.9b02920
zhulj, Xingxing Zhang likes this
08 Oct 02:20
Carbon‐Based Nanocages: A New Platform for Advanced Energy Storage and Conversion
by Qiang Wu,
Lijun Yang,
Xizhang Wang,
Zheng Hu
Carbon‐based nanocages have emerged as a new platform for advanced energy storage and conversion owing to their hollow interior cavity with microchannels across the shells, their high specific surface area with defective outer surface, and their tunable electronic structure. Up‐to‐date progress on the synthesis, encapsulating/supporting of carbon‐based nanocages and their applications is presented, along with the research challenges and trends.
Abstract
Energy storage and conversion play a crucial role in modern energy systems, and the exploration of advanced electrode materials is vital but challenging. Carbon‐based nanocages consisting of sp2 carbon shells feature a hollow interior cavity with sub‐nanometer microchannels across the shells, high specific surface area with a defective outer surface, and tunable electronic structure, much different from the intensively studied nanocarbons such as carbon nanotubes and graphene. These structural and morphological characteristics make carbon‐based nanocages a new platform for advanced energy storage and conversion. Up‐to‐date synthetic strategies of carbon‐based nanocages, the utilization of their unique porous structure and morphology for the construction of composites with foreign active species, and their significant applications to the advanced energy storage and conversion are reviewed. Structure–performance correlations are discussed in depth to highlight the contribution of carbon‐based nanocages. The research challenges and trends are also envisaged for deepening and extending the study and application of this multifunctional material.
zhulj, Xingxing Zhang likes this
08 Oct 02:19
Layered Transition Metal Dichalcogenide‐Based Nanomaterials for Electrochemical Energy Storage
by Qinbai Yun,
Liuxiao Li,
Zhaoning Hu,
Qipeng Lu,
Bo Chen,
Hua Zhang
A typical 2D nanomaterial, layered transition metal dichalcogenides (TMDs) are emerging as promising materials for electrochemical energy storage systems. The typical methods for preparation of layered TMD‐based nanomaterials, as well as their applications in various kinds of rechargeable batteries and supercapacitors, are summarized. Moreover, current challenges and future research directions in this field are proposed.
Abstract
The rapid development of electrochemical energy storage (EES) systems requires novel electrode materials with high performance. A typical 2D nanomaterial, layered transition metal dichalcogenides (TMDs) are regarded as promising materials used for EES systems due to their large specific surface areas and layer structures benefiting fast ion transport. The typical methods for the preparation of TMDs and TMD‐based nanohybrids are first summarized. Then, in order to improve the electrochemical performance of various kinds of rechargeable batteries, such as lithium‐ion batteries, lithium–sulfur batteries, sodium‐ion batteries, and other types of emerging batteries, the strategies for the design and fabrication of layered TMD‐based electrode materials are discussed. Furthermore, the applications of layered TMD‐based nanomaterials in supercapacitors, especially in untraditional supercapacitors, are presented. Finally, the existing challenges and promising future research directions in this field are proposed.
zhulj, Xingxing Zhang likes this