ACS Nano
DOI: 10.1021/acsnano.9b06061
Xingxing Zhang
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12 Dec 04:27
[ASAP] Direct Imaging of Individual Molecular Binding to Clean Nanopore Edges in 2D Monolayer MoS2
by Mihael A. Gerkman†, Ja Kyung Lee‡, Xiang Li†, Qianyang Zhang‡, Maurice Windley†, Maria V. Fonseca†, Yang Lu‡, Jamie H. Warner‡, and Grace G. D. Han*†
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12 Dec 04:26
[ASAP] Bifunctional NbS2-Based Asymmetric Heterostructure for Lateral and Vertical Electronic Devices
by Bolun Wang†, Hao Luo†, Xuewen Wang†, Enze Wang†, Yufei Sun†, Yu-Chien Tsai‡, Hui Zhu§, Peng Liu‡, Kaili Jiang‡, and Kai Liu*†
ACS Nano
DOI: 10.1021/acsnano.9b06627
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24 Nov 09:00
[ASAP] Probing Charge Carrier Transport and Recombination Pathways in Monolayer MoS2/WS2 Heterojunction Photoelectrodes
by Li Wang†, Muhammad Tahir‡, Hua Chen‡§, and Justin B. Sambur*†§
Nano Letters
DOI: 10.1021/acs.nanolett.9b04209
24 Nov 09:00
[ASAP] Kinetic Ionic Permeation and Interfacial Doping of Supported Graphene
by Xiaoyu Jia†‡, Min Hu§, Karuppasamy Soundarapandian?, Xiaoqing Yu†, Zhaoyang Liu†#, Zongping Chen†?, Akimitsu Narita†, Klaus Mu¨llen†, Frank H. L. Koppens?, Jun Jiang§, Klaas-Jan Tielrooij?, Mischa Bonn†, and Hai I. Wang*†
Nano Letters
DOI: 10.1021/acs.nanolett.9b04053
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24 Nov 08:58
Interfacial Engineering of W2N/WC Heterostructures Derived from Solid‐State Synthesis: A Highly Efficient Trifunctional Electrocatalyst for ORR, OER, and HER
by Jinxiang Diao,
Yu Qiu,
Shuangquan Liu,
Weitao Wang,
Kai Chen,
Hailong Li,
Wenyu Yuan,
Yunteng Qu,
Xiaohui Guo
Interfacial engineering of W2N/WC heterostructures for ORR, OER, and HER via a facile and practical solid‐state synthesis strategy is investigated. W2N/WC heterostructures exhibit superior electrochemical activity and stability. Such W2N/WC heterostructures catalysts also exhibit remarkable performance for Zn–air batteries and overall water splitting. This work paves a new way for constructing the electrocatalyst in electrochemical energy devices.
Abstract
To meet the practical demand of overall water splitting and regenerative metal–air batteries, highly efficient, low‐cost, and durable electrocatalysts for the oxygen reduction reaction (ORR), oxygen evolution reaction (OER), and hydrogen evolution reaction (HER) are required to displace noble metal catalysts. In this work, a facile solid‐state synthesis strategy is developed to construct the interfacial engineering of W2N/WC heterostructures, in which abundant interfaces are formed. Under high temperature (800 °C), volatile CN x species from dicyanodiamide are trapped by WO3 nanorods, followed by simultaneous nitridation and carbonization, to form W2N/WC heterostructure catalysts. The resultant W2N/WC heterostructure catalysts exhibit an efficient and stable electrocatalytic performance toward the ORR, OER, and HER, including a half‐wave potential of 0.81 V (ORR) and a low overpotential at 10 mA cm−2 for the OER (320 mV) and HER (148.5 mV). Furthermore, a W2N/WC‐based Zn–air battery shows outstanding high power density (172 mW cm−2). Density functional theory and X‐ray absorption fine structure analysis computations reveal that W2N/WC interfaces synergistically facilitate transport and separation of charge, thus accelerating the electrochemical ORR, OER, and HER. This work paves a novel avenue for constructing efficient and low‐cost electrocatalysts for electrochemical energy devices.
24 Nov 08:58
Defect‐Engineered Atomically Thin MoS2 Homogeneous Electronics for Logic Inverters
by Li Gao,
Qingliang Liao,
Xiankun Zhang,
Xiaozhi Liu,
Lin Gu,
Baishan Liu,
Junli Du,
Yang Ou,
Jiankun Xiao,
Zhuo Kang,
Zheng Zhang,
Yue Zhang
Accurate and facile solution‐processable defect engineering is proposed for constructing atomic‐thin MoS2 homogeneous electronics. By utilizing the energy‐matched relationship between the formation energy of monosulfur vacancies (Vmonos) and the electron induction energy of H2O2 aqueous solution, numerous pure and lattice‐stable Vmonos are introduced for modulating electronic structure to construct homogeneous electronics including a logic inverter via the shallow trapping effect.
Abstract
Ultrathin molybdenum disulfide (MoS2) presents ideal properties for building next‐generation atomically thin circuitry. However, it is difficult to construct logic units of MoS2 monolayer using traditional silicon‐based doping schemes, such as atomic substitution and ion implantation, as they cause lattice disruption and doping instability. An accurate and feasible electronic structure modulation strategy from defect engineering is proposed to construct homogeneous electronics for MoS2 monolayer logic inverters. By utilizing the energy‐matched electron induction of the solution process, numerous pure and lattice‐stable monosulfur vacancies (Vmonos) are introduced to modulate the electronic structure of monolayer MoS2 via a shallow trapping effect. The resulting modulation effectively reduces the electronic concentration of MoS2 and improves the work function by 100 meV. Under modulation of Vmonos, an atomically thin homogenous monolayer MoS2 logic inverter with a voltage gain of 4 is successfully constructed. A brand‐new and practical design route of defect modulation for 2D‐based circuit development is provided.
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18 Nov 02:58
[ASAP] Observation of Electron Shakeup in CdSe/CdS Core/Shell Nanoplatelets
by Felipe V. Antolinez, Freddy T. Rabouw†, Aurelio A. Rossinelli, Jian Cui‡, and David J. Norris*
Nano Letters
DOI: 10.1021/acs.nanolett.9b02856
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18 Nov 02:58
[ASAP] Intrinsic 2D Ferromagnetism in V5Se8 Epitaxial Thin Films
by Masaki Nakano*†‡?, Yue Wang†?, Satoshi Yoshida†?, Hideki Matsuoka†, Yuki Majima†, Keisuke Ikeda§, Yasuyuki Hirata§?, Yukiharu Takeda?, Hiroki Wadati§?#, Yoshimitsu Kohama?, Yuta Ohigashi†, Masato Sakano†, Kyoko Ishizaka†‡, and Yoshihiro Iwasa†‡
Nano Letters
DOI: 10.1021/acs.nanolett.9b03614
18 Nov 02:56
[ASAP] Gap Opening in Twisted Double Bilayer Graphene by Crystal Fields
by Peter Rickhaus*†, Giulia Zheng†, Jose L. Lado‡¶, Yongjin Lee†, Annika Kurzmann†, Marius Eich†, Riccardo Pisoni†, Chuyao Tong†, Rebekka Garreis†, Carolin Gold†, Michele Masseroni†, Takashi Taniguchi§, Kenji Wantanabe§, Thomas Ihn†, and Klaus Ensslin†
Nano Letters
DOI: 10.1021/acs.nanolett.9b03660
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18 Nov 02:55
[ASAP] Observation of the Kondo Effect in Multilayer Single-Crystalline VTe2 Nanoplates
by Hongtao Liu†#, Yunzhou Xue‡#, Jin-An Shi§, Roger A. Guzman§, Panpan Zhang†, Zhang Zhou†, Yangu He†?, Ce Bian†, Liangmei Wu†, Ruisong Ma†, Jiancui Chen†, Jiahao Yan†, Haitao Yang†, Cheng-Min Shen†?, Wu Zhou§, Lihong Bao*†?, and Hong-Jun Gao†
Nano Letters
DOI: 10.1021/acs.nanolett.9b03100
18 Nov 02:54
Superconductivity of Topological Surface States and Strong Proximity Effect in Sn1−xPbxTe–Pb Heterostructures
by Hao Yang,
Yao‐Yi Li,
Teng‐Teng Liu,
Huan‐Yi Xue,
Dan‐Dan Guan,
Shi‐Yong Wang,
Hao Zheng,
Can‐Hua Liu,
Liang Fu,
Jin‐Feng Jia
Superconducting topological crystalline insulators are expected to form a new type of topological superconductors protected by lattice symmetries. Unconventional peak–dip–hump gap features and fourfold symmetric quasiparticle interference patterns taken at the zero energy in the superconducting gap support the presence of the topological superconductivity in Sn1− x Pb x Te–Pb heterostructures. Moreover, the superconducting proximity effect is found to be unexpectedly strong even at 4.2 K.
Abstract
Superconducting topological crystalline insulators are expected to form a new type of topological superconductors to host Majorana zero modes under the protection of lattice symmetries. The bulk superconductivity of topological crystalline insulators can be induced through chemical doping and the proximity effect. However, only conventional full gaps are observed, so the existence of topological superconductivity in topological crystalline insulators is still controversial. Here, the successful fabrication of atomically flat lateral and vertical Sn1− x Pb x Te–Pb heterostructures by molecular beam epitaxy is reported. The superconductivity of the Sn1− x Pb x Te–Pb heterostructures can be directly investigated by scanning tunneling spectroscopy. Unconventional peak–dip–hump gap features and fourfold symmetric quasiparticle interference patterns taken at the zero energy in the superconducting gap support the presence of the topological superconductivity in superconducting Sn1− x Pb x Te. Strong superconducting proximity effect and easy preparation of various constructions between Sn1− x Pb x Te and Pb make the heterostructures to be a promising candidate for topological superconducting devices to detect and manipulate Majorana zero modes in the future.
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12 Nov 05:17
[ASAP] Surface-State Assisted Carrier Recombination and Optical Nonlinearities in Bulk to 2D Nonlayered PtS
by Jiawei Huang†‡§, Ningning Dong*†‡§, Niall McEvoy*?, Lei Wang†‡§, Cormac O´ Coilea´in?, Hongqiang Wang†‡§, Conor P. Cullen?, Chenduan Chen†‡§, Saifeng Zhang†‡§, Long Zhang†‡§, and Jun Wang*†‡§?
ACS Nano
DOI: 10.1021/acsnano.9b06782
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12 Nov 05:16
[ASAP] Gate-Induced Metal–Insulator Transition in 2D van der Waals Layers of Copper Indium Selenide Based Field-Effect Transistors
by Prasanna D. Patil†, Sujoy Ghosh†#, Milinda Wasala†#, Sidong Lei‡§, Robert Vajtai‡, Pulickel M. Ajayan‡, Arindam Ghosh??, and Saikat Talapatra*†
ACS Nano
DOI: 10.1021/acsnano.9b06846
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12 Nov 05:15
[ASAP] Metallic 1T Phase, 3d1 Electronic Configuration and Charge Density Wave Order in Molecular Beam Epitaxy Grown Monolayer Vanadium Ditelluride
by Ping Kwan Johnny Wong*†?, Wen Zhang‡?, Jun Zhou‡, Fabio Bussolotti§, Xinmao Yin‡, Lei Zhang†‡, Alpha T. N’Diaye?, Simon A. Morton?, Wei Chen†‡?, Johnson Goh*‡§, Michel P. de Jong#, Yuan Ping Feng†‡, and Andrew T. S. Wee*†‡
ACS Nano
DOI: 10.1021/acsnano.9b05349
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12 Nov 05:13
[ASAP] Topological Magnetic-Spin Textures in Two-Dimensional van der Waals Cr2Ge2Te6
by Myung-Geun Han*†?, Joseph A. Garlow†‡?, Yu Liu†, Huiqin Zhang§, Jun Li†, Donald DiMarzio?, Mark W. Knight?, Cedomir Petrovic†, Deep Jariwala§, and Yimei Zhu†‡
Nano Letters
DOI: 10.1021/acs.nanolett.9b02849
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12 Nov 05:12
[ASAP] Band Filling and Cross Quantum Capacitance in Ion-Gated Semiconducting Transition Metal Dichalcogenide Monolayers
by Haijing Zhang*†‡, Christophe Berthod†, Helmuth Berger§, Thierry Giamarchi†, and Alberto F. Morpurgo*†‡
Nano Letters
DOI: 10.1021/acs.nanolett.9b03667
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12 Nov 05:12
[ASAP] Large Multidirectional Spin-to-Charge Conversion in Low-Symmetry Semimetal MoTe2 at Room Temperature
by C. K. Safeer†?, Nerea Ontoso†?, Josep Ingla-Ayne´s†, Franz Herling†, Van Tuong Pham†, Annika Kurzmann‡, Klaus Ensslin‡, Andrey Chuvilin†§, In~igo Robredo??, Maia G. Vergniory§?, Fernando de Juan§?, Luis E. Hueso*†§, M. Reyes Calvo*†§#, and Fe`lix Casanova*†§
Nano Letters
DOI: 10.1021/acs.nanolett.9b03485
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12 Nov 05:12
[ASAP] Anion Extraction-Induced Polymorph Control of Transition Metal Dichalcogenides
by Dae-Hyun Nam†§, Ji-Yong Kim†§, Sungwoo Kang†§, Wonhyo Joo†, Seung-Yong Lee†, Hongmin Seo†, Hyoung Gyun Kim†, In-Kyoung Ahn†, Gi-Baek Lee†, Minjeong Choi†, Eunsoo Cho†, Miyoung Kim†‡, Ki Tae Nam†‡, Seungwu Han†‡, and Young-Chang Joo*†‡
Nano Letters
DOI: 10.1021/acs.nanolett.9b03240
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12 Nov 05:12
[ASAP] Atomic-Precision Fabrication of Quasi-Full-Space Grain Boundaries in Two-Dimensional Hexagonal Boron Nitride
by Xibiao Ren, Xiaowei Wang, and Chuanhong Jin*
Nano Letters
DOI: 10.1021/acs.nanolett.9b03114
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12 Nov 05:11
[ASAP] Nitrofullerene, a C60-based Bifunctional Additive with Smoothing and Protecting Effects for Stable Lithium Metal Anode
by Zhipeng Jiang†‡, Ziqi Zeng†, Chengkai Yang§, Zhilong Han†, Wei Hu†, Jing Lu?, and Jia Xie*†
Nano Letters
DOI: 10.1021/acs.nanolett.9b03562
12 Nov 05:10
[ASAP] Strain Relaxation in Misfitting Transition Metal Dichalcogenide Monolayer Superlattices: Wrinkling vs Misfit Dislocation Formation
by Yang Xia†, Ryan S. Davis†, and Mikko P. Haataja*†‡
Nano Letters
DOI: 10.1021/acs.nanolett.9b03425
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12 Nov 05:10
[ASAP] Thickness-Insensitive Properties of a-MoO3 Nanosheets by Weak Interlayer Coupling
by Jong Hun Kim†?, Changbae Hyun‡?, Hangyel Kim†?, Jatis Kumar Dash§, Kyuwook Ihm?, and Gwan-Hyoung Lee*†?
Nano Letters
DOI: 10.1021/acs.nanolett.9b03701
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12 Nov 05:10
[ASAP] Transverse Detection of DNA Using a MoS2 Nanopore
by Michael Graf*†, Martina Lihter†, Damir Altus‡, Sanjin Marion†, and Aleksandra Radenovic*†
Nano Letters
DOI: 10.1021/acs.nanolett.9b04180
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12 Nov 05:09
[ASAP] Molecularly Thin Electrolyte for All Solid-State Nonvolatile Two-Dimensional Crystal Memory
by Jierui Liang†#, Ke Xu*†#, Maokun Wu‡, Benjamin M. Hunt§, Wei-Hua Wang‡, Kyeongjae Cho?, and Susan K. Fullerton-Shirey*†?
Nano Letters
DOI: 10.1021/acs.nanolett.9b03792
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12 Nov 05:07
Nanoenvelopes: Wrapping a Single‐Walled Carbon Nanotube with Graphene using an Atomic Force Microscope
by Xiao Hu,
Hang Wei,
Jia Liu,
Jian Zhang,
Xiannian Chi,
Peng Jiang,
Lianfeng Sun
Engineering low‐dimensional carbon nanomaterials is important to study their novel properties. The techniques used to engineer carbon nanotube (CNT)‐based and graphene‐based nanostructures are reviewed, and recent progress regarding their applications, such as graphene‐contacted CNT devices is then introduced.
Abstract
Engineering the morphology and structure of low‐dimensional carbon nanomaterials is important to study their mechanical and electrical properties and even superconductivity. Herein, first the techniques that are used to engineer carbon nanotubes, including manipulation, morphology modification, and fabrication of complex nanostructures, are reviewed. This is followed by a summary of the methods applied to fabricate graphene nanostructures, such as heterostructures and nanoenvelopes of graphene. Lastly, an insight into the applications of low‐dimensional‐carbon‐based electronics is given, such as carbon nanotube (CNT) transistors, graphene‐based nanoenvelopes, and graphene‐contacted CNT field‐effect transistors (FETs), which are promising components in future electronics.
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12 Nov 05:06
Heterostructures Based on 2D Materials: A Versatile Platform for Efficient Catalysis
by Tofik Ahmed Shifa,
Fengmei Wang,
Yang Liu,
Jun He
The construction of different heterostructures based on 2D materials offers great opportunities for boosting the catalytic activity in electo(photo)chemical reactions. Starting from the theoretical background of the fundamental concepts, the progressive developments in the design and applications of heterostructures based on 2D materials are summarized.
Abstract
The unique structural and electronic properties of 2D materials, including the metal and metal‐free ones, have prompted intense exploration in the search for new catalysts. The construction of different heterostructures based on 2D materials offers great opportunities for boosting the catalytic activity in electo(photo)chemical reactions. Particularly, the merits resulting from the synergism of the constituent components and the fascinating properties at the interface are tremendously interesting. This scenario has now become the state‐of‐the‐art point in the development of active catalysts for assisting energy conversion reactions including water splitting and CO2 reduction. Here, starting from the theoretical background of the fundamental concepts, the progressive developments in the design and applications of heterostructures based on 2D materials are traced. Furthermore, a personal perspective on the exploration of 2D heterostructures for further potential application in catalysis is offered.
12 Nov 05:06
Strain Engineering of 2D Materials: Issues and Opportunities at the Interface
by Zhaohe Dai,
Luqi Liu,
Zhong Zhang
The strain engineering of 2D materials is particularly exciting, because an individual sheet can survive remarkably large mechanical strain and its atomic thinness allows mechanical deformations like a piece of paper. These exceptional circumstances create opportunities for the study of new fundamental physics and applications of 2D materials emerging at the large strain level.
Abstract
Triggered by the growing needs of developing semiconductor devices at ever‐decreasing scales, strain engineering of 2D materials has recently seen a surge of interest. The goal of this principle is to exploit mechanical strain to tune the electronic and photonic performance of 2D materials and to ultimately achieve high‐performance 2D‐material‐based devices. Although strain engineering has been well studied for traditional semiconductor materials and is now routinely used in their manufacturing, recent experiments on strain engineering of 2D materials have shown new opportunities for fundamental physics and exciting applications, along with new challenges, due to the atomic nature of 2D materials. Here, recent advances in the application of mechanical strain into 2D materials are reviewed. These developments are categorized by the deformation modes of the 2D material–substrate system: in‐plane mode and out‐of‐plane mode. Recent state‐of‐the‐art characterization of the interface mechanics for these 2D material–substrate systems is also summarized. These advances highlight how the strain or strain‐coupled applications of 2D materials rely on the interfacial properties, essentially shear and adhesion, and finally offer direct guidelines for deterministic design of mechanical strains into 2D materials for ultrathin semiconductor applications.
12 Nov 05:05
Potential 2D Materials with Phase Transitions: Structure, Synthesis, and Device Applications
by Xinsheng Wang,
Zhigang Song,
Wen Wen,
Haining Liu,
Juanxia Wu,
Chunhe Dang,
Mongur Hossain,
Muhammad Ahsan Iqbal,
Liming Xie
2D materials with phase transitions, such as charge density wave and magnetic and dipole orderings, are an important subfamily of 2D materials. Strong charge–spin–lattice couplings in the materials enable vast potentials for new‐concept and new‐structure devices. Recent experimental progress on the synthesis and device demonstration based 2D phase‐transition materials, such as 1T‐TaS2, CrI3, and Cr2Ge2Te6 monolayers, is reviewed.
Abstract
Layered materials with phase transitions, such as charge density wave (CDW) and magnetic and dipole ordering, have potential to be exfoliated into monolayers and few‐layers and then become a large and important subfamily of two‐dimensional (2D) materials. Benefitting from enriched physical properties from the collective interactions, long‐range ordering, and related phase transitions, as well as the atomic thickness yet having nondangling bonds on the surface, 2D phase‐transition materials have vast potential for use in new‐concept and functional devices. Here, potential 2D phase‐transition materials with CDWs and magnetic and dipole ordering, including transition metal dichalcogenides, transition metal halides, metal thio/selenophosphates, chromium silicon/germanium tellurides, and more, are introduced. The structures and experimental phase‐transition properties are summarized for the bulk materials and some of the obtained monolayers. In addition, recent experimental progress on the synthesis and measurement of monolayers, such as 1T‐TaS2, CrI3, and Cr2Ge2Te6, is reviewed.
12 Nov 05:05
Antibacterial Carbon‐Based Nanomaterials
by Qi Xin,
Hameed Shah,
Asmat Nawaz,
Wenjing Xie,
Muhammad Zain Akram,
Aisha Batool,
Liangqiu Tian,
Saad Ullah Jan,
Rajender Boddula,
Beidou Guo,
Qian Liu,
Jian Ru Gong
The recent research progress on antibacterial carbon‐based nanomaterials (CNMs) is reviewed, first focusing on the physicochemical parameters of CNMs, then introducing various antibacterial mechanisms and discussing the influence of physicochemical parameters on their antibacterial activity. Finally a conclusion is presented highlighting the current challenges and future perspectives for the development of more effective and safer antibacterial CNMs.
Abstract
The emergence and global spread of bacterial resistance to currently available antibiotics underscore the urgent need for new alternative antibacterial agents. Recent studies on the application of nanomaterials as antibacterial agents have demonstrated their great potential for management of infectious diseases. Among these antibacterial nanomaterials, carbon‐based nanomaterials (CNMs) have attracted much attention due to their unique physicochemical properties and relatively higher biosafety. Here, a comprehensive review of the recent research progress on antibacterial CNMs is provided, starting with a brief description of the different kinds of CNMs with respect to their physicochemical characteristics. Then, a detailed introduction to the various mechanisms underlying antibacterial activity in these materials is given, including physical/mechanical damage, oxidative stress, photothermal/photocatalytic effect, lipid extraction, inhibition of bacterial metabolism, isolation by wrapping, and the synergistic effect when CNMs are used in combination with other antibacterial materials, followed by a summary of the influence of the physicochemical properties of CNMs on their antibacterial activity. Finally, the current challenges and an outlook for the development of more effective and safer antibacterial CNMs are discussed.
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12 Nov 05:01
Atomic Layer Deposition on Dispersed Materials in Liquid Phase by Stoichiometrically Limited Injections
by Benjamin P. Le Monnier,
Frederick Wells,
Farzaneh Talebkeikhah,
Jeremy S. Luterbacher
Liquid‐phase atomic layer deposition is performed on high‐surface‐area dispersed nanomaterials at room temperature and pressure. This new method requires typical laboratory equipment, uses no excess precursors or purging steps, and allows for easy monitoring of the reaction by quantifying ligand release.
Abstract
Atomic layer deposition (ALD) is a well‐established vapor‐phase technique for depositing thin films with high conformality and atomically precise control over thickness. Its industrial development has been largely confined to wafers and low‐surface‐area materials because deposition on high‐surface‐area materials and powders remains extremely challenging. Challenges with such materials include long deposition times, extensive purging cycles, and requirements for large excesses of precursors and expensive low‐pressure equipment. Here, a simple solution‐phase deposition process based on subsequent injections of stoichiometric quantities of precursor is performed using common laboratory synthesis equipment. Precisely measured precursor stoichiometries avoid any unwanted reactions in solution and ensure layer‐by‐layer growth with the same precision as gas‐phase ALD, without any excess precursor or purging required. Identical coating qualities are achieved when comparing this technique to Al2O3 deposition by fluidized‐bed reactor ALD (FBR‐ALD). The process is easily scaled up to coat >150 g of material using the same inexpensive laboratory glassware without any loss in coating quality. This technique is extended to sulfides and phosphates and can achieve coatings that are not possible using classic gas‐phase ALD, including the deposition of phosphates with inexpensive but nonvolatile phosphoric acid.
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