
Xingxing Zhang
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[ASAP] Chirality Pure Carbon Nanotubes: Growth, Sorting, and Characterization
A type of novel Weyl semimetal candidate: layered transition metal monochalcogenides Mo2XY (X, Y = S, Se, Te, X ≠ Y)
DOI: 10.1039/C9NR09123H, Paper
Based on ab initio calculations and the Wannier-based tight-binding method, we studied the topological electronic properties and strain modulation of transition metal monochalcogenides (TMM) Mo2XY (X, Y = S, Se, Te, X ≠ Y).
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[ASAP] C60(OH)12 and Its Nanocomposite for High-Performance Lithium Storage

[ASAP] Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires

[ASAP] Redox-Active Tyrosine-Mediated Peptide Template for Large-Scale Single-Crystalline Two-Dimensional Silver Nanosheets

[ASAP] Synthesis of a Hybrid Nanostructure of ZnO-Decorated MoS2 by Atomic Layer Deposition

[ASAP] Lateral Heterostructure Field-Effect Transistors Based on Two-Dimensional Material Stacks with Varying Thickness and Energy Filtering Source

[ASAP] Solution-Phase Activation and Functionalization of Colloidal WS2 Nanosheets with Ni Single Atoms

[ASAP] Controlling Polarity of MoTe2 Transistors for Monolithic Complementary Logic via Schottky Contact Engineering

[ASAP] Direct Visualization of Electric-Field-Induced Structural Dynamics in Monolayer Transition Metal Dichalcogenides

[ASAP] Atomically Precise PdSe2 Pentagonal Nanoribbons

[ASAP] The Coalescence Behavior of Two-Dimensional Materials Revealed by Multiscale In Situ Imaging during Chemical Vapor Deposition Growth

[ASAP] Direct Observation of the Linear Dichroism Transition in Two-Dimensional Palladium Diselenide

[ASAP] Differential Charging in Photoemission from Mercurated DNA Monolayers on Ferromagnetic Films

[ASAP] Frictional Drag Effect between Massless and Massive Fermions in Single-Layer/Bilayer Graphene Heterostructures

[ASAP] Double Moiré with a Twist: Supermoiré in Encapsulated Graphene

[ASAP] Localized Heating and Switching in MoTe2-Based Resistive Memory Devices

Efficient All‐Optical Plasmonic Modulators with Atomically Thin Van Der Waals Heterostructures
The highly efficient all‐optical modulation of a graphene plasmon waveguide is realized by constructing van der Waals (vdW) heterostructures of graphene and monolayer MoS2. It takes the advantage of the high photoresponse of the monolayer MoS2 and the ultrafast charge transfer in the ultrathin vdW heterostructures.
Abstract
All‐optical modulators are attracting significant attention due to their intrinsic perspective on high‐speed, low‐loss, and broadband performance, which are promising to replace their electrical counterparts for future information communication technology. However, high‐power consumption and large footprint remain obstacles for the prevailing nonlinear optical methods due to the weak photon–photon interaction. Here, efficient all‐optical mid‐infrared plasmonic waveguide and free‐space modulators in atomically thin graphene‐MoS2 heterostructures based on the ultrafast and efficient doping of graphene with the photogenerated carrier in the monolayer MoS2 are reported. Plasmonic modulation of 44 cm−1 is demonstrated by an LED with light intensity down to 0.15 mW cm−2, which is four orders of magnitude smaller than the prevailing graphene nonlinear all‐optical modulators (≈103 mW cm−2). The ultrafast carrier transfer and recombination time of photogenerated carriers in the heterostructure may achieve ultrafast modulation of the graphene plasmon. The demonstration of the efficient all‐optical mid‐infrared plasmonic modulators, with chip‐scale integrability and deep‐sub wavelength light field confinement derived from the van der Waals heterostructures, may be an important step toward on‐chip all‐optical devices.
Synthesis of Co‐Doped MoS2 Monolayers with Enhanced Valley Splitting
The synthesis of a Co‐doped MoS2 monolayer with enhanced valley Zeeman splitting is reported. Valley splittings are revealed by polarization‐resolved photoluminescence spectroscopy. Atomic‐resolution electron microscopy studies clearly identify the magnetic sites of Co substitution in the MoS2 lattice. The enhanced valley Zeeman splitting is further demonstrated by density functional theory and model calculations.
Abstract
Internal magnetic moments induced by magnetic dopants in MoS2 monolayers are shown to serve as a new means to engineer valley Zeeman splitting (VZS). Specifically, successful synthesis of monolayer MoS2 doped with the magnetic element Co is reported, and the magnitude of the valley splitting is engineered by manipulating the dopant concentration. Valley splittings of 3.9, 5.2, and 6.15 meV at 7 T in Co‐doped MoS2 with Co concentrations of 0.8%, 1.7%, and 2.5%, respectively, are achieved as revealed by polarization‐resolved photoluminescence (PL) spectroscopy. Atomic‐resolution electron microscopy studies clearly identify the magnetic sites of Co substitution in the MoS2 lattice, forming two distinct types of configurations, namely isolated single dopants and tridopant clusters. Density functional theory (DFT) and model calculations reveal that the observed enhanced VZS arises from an internal magnetic field induced by the tridopant clusters, which couples to the spin, atomic orbital, and valley magnetic moment of carriers from the conduction and valence bands. The present study demonstrates a new method to control the valley pseudospin via magnetic dopants in layered semiconducting materials, paving the way toward magneto‐optical and spintronic devices.
[ASAP] Graphene–Transition Metal Dichalcogenide Heterojunctions for Scalable and Low-Power Complementary Integrated Circuits

[ASAP] Tellurene Photodetector with High Gain and Wide Bandwidth

[ASAP] Electrical Control of Hybrid Monolayer Tungsten Disulfide–Plasmonic Nanoantenna Light–Matter States at Cryogenic and Room Temperatures

[ASAP] Exploitable Magnetic Anisotropy of the Two-Dimensional Magnet CrI3

Defect Engineering on Electrode Materials for Rechargeable Batteries
Recent advances regarding defect engineering on electrode materials for rechargeable batteries are systematically summarized, with a special focus on application in metal‐ion batteries, lithium–sulfur batteries, and metal–air batteries. The defects can not only promote diffusion of ions and charge transfer, but also maintain structural stability and provide more energy storage/adsorption/active sites, thus improving the performance of the batteries.
Abstract
The reasonable design of electrode materials for rechargeable batteries plays an important role in promoting the development of renewable energy technology. With the in‐depth understanding of the mechanisms underlying electrode reactions and the rapid development of advanced technology, the performance of batteries has significantly been optimized through the introduction of defect engineering on electrode materials. A large number of coordination unsaturated sites can be exposed by defect construction in electrode materials, which play a crucial role in electrochemical reactions. Herein, recent advances regarding defect engineering in electrode materials for rechargeable batteries are systematically summarized, with a special focus on the application of metal‐ion batteries, lithium–sulfur batteries, and metal–air batteries. The defects can not only effectively promote ion diffusion and charge transfer but also provide more storage/adsorption/active sites for guest ions and intermediate species, thus improving the performance of batteries. Moreover, the existing challenges and future development prospects are forecast, and the electrode materials are further optimized through defect engineering to promote the development of the battery industry.
[ASAP] Iodine Vapor Transport-Triggered Preferential Growth of Chevrel Mo6S8 Nanosheets for Advanced Multivalent Batteries

[ASAP] Artificial Optoelectronic Synapses Based on Ferroelectric Field-Effect Enabled 2D Transition Metal Dichalcogenide Memristive Transistors

[ASAP] Three Dimensionally Free-Formable Graphene Foam with Designed Structures for Energy and Environmental Applications

[ASAP] In Situ Variable-Temperature Scanning Tunneling Microscopy Studies of Graphene Growth Using Benzene on Pd(111)

[ASAP] Continuous Wave Sum Frequency Generation and Imaging of Monolayer and Heterobilayer Two-Dimensional Semiconductors

[ASAP] Synthetic Semimetals with van der Waals Interfaces
