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08 Oct 01:40

[ASAP] Global Alignment of Solution-Based Single-Wall Carbon Nanotube Films via Machine-Vision Controlled Filtration

by Joshua S. Walker†, Jeffrey A. Fagan‡, Adam J. Biacchi?, Valerie A. Kuehl§, Thomas A. Searles?, Angela R. Hight Walker?, and William D. Rice*†

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Nano Letters
DOI: 10.1021/acs.nanolett.9b02853
08 Oct 01:40

[ASAP] Polarity Tunable Trionic Electroluminescence in Monolayer WSe2

by Junyong Wang†‡, Fanrong Lin†‡, Ivan Verzhbitskiy†‡, Kenji Watanabe§, Takashi Taniguchi§, Jens Martin†‡?, and Goki Eda*†‡?

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Nano Letters
DOI: 10.1021/acs.nanolett.9b03215
23 Sep 07:14

[ASAP] Carbon-Rich Domain in Hexagonal Boron Nitride: Carrier Mobility Degradation and Anomalous Bending of the Landau Fan Diagram in Adjacent Graphene

by Momoko Onodera†, Kenji Watanabe‡, Miyako Isayama†, Miho Arai†, Satoru Masubuchi†, Rai Moriya†, Takashi Taniguchi‡, and Tomoki Machida*†

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Nano Letters
DOI: 10.1021/acs.nanolett.9b02879
23 Sep 07:13

[ASAP] Unconventional Defects in a Quasi-One-Dimensional KMn6Bi5

by Hee Joon Jung†, Jin-Ke Bao‡, Duck Young Chung‡, Mercouri G. Kanatzidis‡§, and Vinayak P. Dravid*†

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Nano Letters
DOI: 10.1021/acs.nanolett.9b03237
23 Sep 07:13

[ASAP] Strain-Tunable Single Photon Sources in WSe2 Monolayers

by Oliver Iff†?, Davide Tedeschi‡?, Javier Marti´n-Sa´nchez*§??, Magdalena Moczala-Dusanowska†, Sefaattin Tongay?, Kentaro Yumigeta?, Javier Taboada-Gutie´rrez§?, Matteo Savaresi‡, Armando Rastelli#, Pablo Alonso-Gonza´lez§?, Sven Ho¨fling†?, Rinaldo Trotta*‡, and Christian Schneider*†

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Nano Letters
DOI: 10.1021/acs.nanolett.9b02221
16 Sep 06:47

[ASAP] Suspended Graphene Membranes with Attached Silicon Proof Masses as Piezoresistive Nanoelectromechanical Systems Accelerometers

by Xuge Fan*†, Fredrik Forsberg?, Anderson D. Smith§, Stephan Schro¨der†, Stefan Wagner‡, Mikael O¨stling§, Max C. Lemme*‡§, and Frank Niklaus*†

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Nano Letters
DOI: 10.1021/acs.nanolett.9b01759
16 Sep 06:46

[ASAP] Light Polarization-Controlled Conversion of Ultrafast Coherent–Incoherent Exciton Dynamics in Few-Layer ReS2

by Sangwan Sim†?, Doeon Lee‡?, Jekwan Lee§, Hyemin Bae?, Minji Noh§, Soonyoung Cha?, Moon-Ho Jo??, Kyusang Lee‡#, and Hyunyong Choi*§

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Nano Letters
DOI: 10.1021/acs.nanolett.9b03173
16 Sep 06:46

[ASAP] In Situ Probing Molecular Intercalation in Two-Dimensional Layered Semiconductors

by Qiyuan He†?, Zhaoyang Lin†?, Mengning Ding‡§, Anxiang Yin†, Udayabagya Halim†, Chen Wang‡, Yuan Liu‡§, Hung-Chieh Cheng‡, Yu Huang‡§, and Xiangfeng Duan*†§

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Nano Letters
DOI: 10.1021/acs.nanolett.9b01898
16 Sep 06:46

[ASAP] Direct Observation of Gate-Tunable Dark Trions in Monolayer WSe2

by Zhipeng Li†¶, Tianmeng Wang†¶, Zhengguang Lu‡§, Mandeep Khatoniar??, Zhen Lian†, Yuze Meng†, Mark Blei#, Takashi Taniguchi?, Kenji Watanabe?, Stephen A. McGill‡, Sefaattin Tongay#, Vinod M. Menon??, Dmitry Smirnov‡, and Su-Fei Shi*†?

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Nano Letters
DOI: 10.1021/acs.nanolett.9b02132
16 Sep 06:45

[ASAP] Strong Opto-Structural Coupling in Low Dimensional GeSe3 Films

by Syed Ghazi Sarwat†, Zengguang Cheng, Nathan Youngblood, Mohd Sharizal Alias, Sapna Sinha, Jamie Warner, and Harish Bhaskaran*

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Nano Letters
DOI: 10.1021/acs.nanolett.9b03039
16 Sep 06:45

[ASAP] Position and Frequency Control of Strain-Induced Quantum Emitters in WSe2 Monolayers

by Hyoju Kim†§, Jong Sung Moon†§, Gichang Noh‡, Jieun Lee‡, and Je-Hyung Kim*†

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Nano Letters
DOI: 10.1021/acs.nanolett.9b03421
16 Sep 06:45

[ASAP] Scaling-up Atomically Thin Coplanar Semiconductor–Metal Circuitry via Phase Engineered Chemical Assembly

by Xiaolong Xu†‡, Shuai Liu†, Bo Han§, Yimo Han?, Kai Yuan†, Wanjin Xu†, Xiaohan Yao†, Pan Li†, Shiqi Yang?, Wenting Gong†, David A. Muller?#, Peng Gao‡§?, Yu Ye*†‡?, and Lun Dai*†‡

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Nano Letters
DOI: 10.1021/acs.nanolett.9b02006
16 Sep 06:45

[ASAP] Interfacial Engineering at the 2D/3D Heterojunction for High-Performance Perovskite Solar Cells

by Tianqi Niu†?, Jing Lu†?, Xuguang Jia§, Zhuo Xu†, Ming-Chun Tang?, Dounya Barrit?, Ningyi Yuan§, Jianning Ding§, Xu Zhang†‡, Yuanyuan Fan†, Tao Luo†, Yalan Zhang†, Detlef-M. Smilgies?, Zhike Liu†, Aram Amassian?#, Shengye Jin‡, Kui Zhao*†, and Shengzhong Liu†‡

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Nano Letters
DOI: 10.1021/acs.nanolett.9b02781
16 Sep 06:45

[ASAP] Superlocalization of Excitons in Carbon Nanotubes at Cryogenic Temperature

by C. Raynaud†, T. Claude†, A. Borel†, M. R. Amara†, A. Graf‡, J. Zaumseil‡, J.-S. Lauret§, Y. Chassagneux†, and C. Voisin*†

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Nano Letters
DOI: 10.1021/acs.nanolett.9b02816
16 Sep 06:44

[ASAP] A Two-Dimensional MoS2 Catalysis Transistor by Solid-State Ion Gating Manipulation and Adjustment (SIGMA)

by Yecun Wu†?, Stefan Ringe‡§?, Chun-Lan Wu?, Wei Chen?, Ankun Yang?, Hao Chen?, Michael Tang‡§, Guangmin Zhou?, Harold Y. Hwang?#, Karen Chan*?, and Yi Cui*?#

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Nano Letters
DOI: 10.1021/acs.nanolett.9b02888
16 Sep 06:44

[ASAP] Correction to Band Gap Engineering with Ultralarge Biaxial Strains in Suspended Monolayer MoS2

by David Lloyd, Xinghui Liu, Jason W. Christopher, Lauren Cantley, Anubhav Wadehra, Brian L. Kim, Bennett B. Goldberg, Anna K. Swan, and J. Scott Bunch*

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Nano Letters
DOI: 10.1021/acs.nanolett.9b03591
16 Sep 06:28

Optical generation of high carrier densities in 2D semiconductor heterobilayers

by Wang, J., Ardelean, J., Bai, Y., Steinhoff, A., Florian, M., Jahnke, F., Xu, X., Kira, M., Hone, J., Zhu, X.- Y.

Controlling charge density in two-dimensional (2D) materials is a powerful approach for engineering new electronic phases and properties. This control is traditionally realized by electrostatic gating. Here, we report an optical approach for generation of high carrier densities using transition metal dichalcogenide heterobilayers, WSe2/MoSe2, with type II band alignment. By tuning the optical excitation density above the Mott threshold, we realize the phase transition from interlayer excitons to charge-separated electron/hole plasmas, where photoexcited electrons and holes are localized to individual layers. High carrier densities up to 4 x 1014 cm–2 can be sustained under both pulsed and continuous wave excitation conditions. These findings open the door to optical control of electronic phases in 2D heterobilayers.

16 Sep 06:28

Paramagnon drag in high thermoelectric figure of merit Li-doped MnTe

by Zheng, Y., Lu, T., Polash, M. M. H., Rasoulianboroujeni, M., Liu, N., Manley, M. E., Deng, Y., Sun, P. J., Chen, X. L., Hermann, R. P., Vashaee, D., Heremans, J. P., Zhao, H.

Local thermal magnetization fluctuations in Li-doped MnTe are found to increase its thermopower α strongly at temperatures up to 900 K. Below the Néel temperature (TN ~ 307 K), MnTe is antiferromagnetic, and magnon drag contributes αmd to the thermopower, which scales as ~T3. Magnon drag persists into the paramagnetic state up to >3 x TN because of long-lived, short-range antiferromagnet-like fluctuations (paramagnons) shown by neutron spectroscopy to exist in the paramagnetic state. The paramagnon lifetime is longer than the charge carrier–magnon interaction time; its spin-spin spatial correlation length is larger than the free-carrier effective Bohr radius and de Broglie wavelength. Thus, to itinerant carriers, paramagnons look like magnons and give a paramagnon-drag thermopower. This contribution results in an optimally doped material having a thermoelectric figure of merit ZT > 1 at T > ~900 K, the first material with a technologically meaningful thermoelectric energy conversion efficiency from a spin-caloritronic effect.

09 Sep 00:52

Strong Coupling between Magnons and Microwave Photons in On-Chip Ferromagnet-Superconductor Thin-Film Devices

by Yi Li, Tomas Polakovic, Yong-Lei Wang, Jing Xu, Sergi Lendinez, Zhizhi Zhang, Junjia Ding, Trupti Khaire, Hilal Saglam, Ralu Divan, John Pearson, Wai-Kwong Kwok, Zhili Xiao, Valentine Novosad, Axel Hoffmann, and Wei Zhang

Author(s): Yi Li, Tomas Polakovic, Yong-Lei Wang, Jing Xu, Sergi Lendinez, Zhizhi Zhang, Junjia Ding, Trupti Khaire, Hilal Saglam, Ralu Divan, John Pearson, Wai-Kwong Kwok, Zhili Xiao, Valentine Novosad, Axel Hoffmann, and Wei Zhang

A new design for a cavity spintronic device obtains a strong photon-magnon coupling with a magnet that is over 1000 times smaller than previously used magnets.


[Phys. Rev. Lett. 123, 107701] Published Tue Sep 03, 2019

09 Sep 00:45

[ASAP] Nonlinear Graphene Nanoplasmonics

by Joel D. Cox*†‡ and F. Javier Garci´a de Abajo*¶§

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Accounts of Chemical Research
DOI: 10.1021/acs.accounts.9b00308
09 Sep 00:31

Precisely folding nanographene

by Szuromi, P.
02 Sep 03:20

Designing Multifunctionality via Assembling Dissimilar Materials: Epitaxial AlN/ScN Superlattices

by Zhijun Jiang, Charles Paillard, David Vanderbilt, Hongjun Xiang, and L. Bellaiche

Author(s): Zhijun Jiang, Charles Paillard, David Vanderbilt, Hongjun Xiang, and L. Bellaiche

First-principles calculations are performed to investigate the effect of epitaxial strain on energetic, structural, electrical, electronic, and optical properties of 1×1 AlN/ScN superlattices. This system is predicted to adopt four different strain regions exhibiting different properties, including ...


[Phys. Rev. Lett. 123, 096801] Published Wed Aug 28, 2019

02 Sep 03:20

Dielectric Modulation of Two-Dimensional Dipolar Materials

by Ziwei Wang and Erik Luijten

Author(s): Ziwei Wang and Erik Luijten

Spontaneous pattern formation plays an important role in a wide variety of natural phenomena and materials systems. A key ingredient for the occurrence of modulated phases is the presence of competing interactions, generally of different physical origins. We demonstrate that in dipolar films, a prot...


[Phys. Rev. Lett. 123, 096101] Published Wed Aug 28, 2019

02 Sep 03:20

Rational Design Principles of the Quantum Anomalous Hall Effect in Superlatticelike Magnetic Topological Insulators

by Hongyi Sun, Bowen Xia, Zhongjia Chen, Yingjie Zhang, Pengfei Liu, Qiushi Yao, Hong Tang, Yujun Zhao, Hu Xu, and Qihang Liu

Author(s): Hongyi Sun, Bowen Xia, Zhongjia Chen, Yingjie Zhang, Pengfei Liu, Qiushi Yao, Hong Tang, Yujun Zhao, Hu Xu, and Qihang Liu

As a paradigmatic phenomenon in condensed matter physics, the quantum anomalous Hall effect (QAHE) in stoichiometric Chern insulators has drawn great interest for years. Using model Hamiltonian analysis and first-principles calculations, we establish a topological phase diagram and map different 2D ...


[Phys. Rev. Lett. 123, 096401] Published Wed Aug 28, 2019

02 Sep 03:19

Two-Dimensional Non-Fermi-Liquid Metals: A Solvable Large-$N$ Limit

by Jeremias Aguilera Damia, Shamit Kachru, Srinivas Raghu, and Gonzalo Torroba

Author(s): Jeremias Aguilera Damia, Shamit Kachru, Srinivas Raghu, and Gonzalo Torroba

Significant effort has been devoted to the study of “non-Fermi-liquid” (NFL) metals: gapless conducting systems that lack a quasiparticle description. One class of NFL metals involves a finite density of fermions interacting with soft order parameter fluctuations near a quantum critical point. The p...


[Phys. Rev. Lett. 123, 096402] Published Thu Aug 29, 2019

02 Sep 03:18

Probing and Manipulating Valley Coherence of Dark Excitons in Monolayer ${\mathrm{WSe}}_{2}$

by M. R. Molas, A. O. Slobodeniuk, T. Kazimierczuk, K. Nogajewski, M. Bartos, P. Kapuściński, K. Oreszczuk, K. Watanabe, T. Taniguchi, C. Faugeras, P. Kossacki, D. M. Basko, and M. Potemski

Author(s): M. R. Molas, A. O. Slobodeniuk, T. Kazimierczuk, K. Nogajewski, M. Bartos, P. Kapuściński, K. Oreszczuk, K. Watanabe, T. Taniguchi, C. Faugeras, P. Kossacki, D. M. Basko, and M. Potemski

Monolayers of semiconducting transition metal dichalcogenides are two-dimensional direct-gap systems which host tightly bound excitons with an internal degree of freedom corresponding to the valley of the constituting carriers. Strong spin-orbit interaction and the resulting ordering of the spin-spl...


[Phys. Rev. Lett. 123, 096803] Published Fri Aug 30, 2019

02 Sep 03:18

Electrically Tunable Flat Bands and Magnetism in Twisted Bilayer Graphene

by T. M. R. Wolf, J. L. Lado, G. Blatter, and O. Zilberberg

Author(s): T. M. R. Wolf, J. L. Lado, G. Blatter, and O. Zilberberg

Twisted graphene bilayers provide a versatile platform to engineer metamaterials with novel emergent properties by exploiting the resulting geometric moiré superlattice. Such superlattices are known to host bulk valley currents at tiny angles (α≈0.3°) and flat bands at magic angles (α≈1°). We show t...


[Phys. Rev. Lett. 123, 096802] Published Fri Aug 30, 2019

02 Sep 03:13

Recent Efforts in Understanding and Improving the Nonideal Behaviors of Organic Field‐Effect Transistors

by Hio‐Ieng Un, Jie‐Yu Wang, Jian Pei
Advanced Science Recent Efforts in Understanding and Improving the Nonideal Behaviors of Organic Field‐Effect Transistors

Nonideal current–voltage characteristics make the mobility that truly reflects the device performance hard to be extracted. A fundamental understanding is necessary to overcome this issue. Herein, the observed nonideal behaviors of organic field‐effect transistors are summarized and analyzed, and solutions for future device engineering toward ideal organic field‐effect transistors are provided.


Abstract

Over the past three decades, the mobility of organic field‐effect transistors (OFETs) has been improved from 10−5 up to over 10 cm2 V−1 s−1, which reaches or has already satisfied the requirements of demanding applications. However, pronounced nonideal behaviors in current–voltage characteristics are commonly observed, which indicates that the reported mobilities may not truly reflect the device properties. Herein, a comprehensive understanding of the origins of several observed nonidealities (downward, upward, double‐slope, superlinear, and humped transfer characteristics) is summarized, and how to extract comparatively reliable mobilities from nonideal behaviors in OFETs is discussed. Combining an overview of the ideal and state‐of‐the‐art OFETs, considerable possible approaches are also provided for future OFETs.

02 Sep 03:02

Twisted multilayer graphene

by Stajic, J.
28 Aug 12:05

Versatile Applications of Metal Single‐Atom @ 2D Material Nanoplatforms

by Bin Zhang, Taojian Fan, Ni Xie, Guohui Nie, Han Zhang
Advanced Science Versatile Applications of Metal Single‐Atom @ 2D Material Nanoplatforms

The marriage of single metal atoms and 2D materials yields powerful nanoplatforms. The unique advantages, how to synthesize and characterize various 2D material‐supported metal single‐atoms and their diverse applications in chemical production, energy, and the environment are reviewed. The recent advances and research gaps of this emerging field are also summarized.


Abstract

Recently, emerging 2D material‐supported metal single‐atom catalysts (SACs) are receiving enormous attention in heterogeneous catalysis. Due to their well‐defined, precisely located metal centers, unique metal–support interaction and identical coordination environment, these catalysts serve as excellent models for understanding the fundamental issues in catalysis as well as exhibiting intriguing practical applications. Understanding the correlations between metal–support combinations and the catalytic performance at the atomic level can be achieved on the SACs@2D materials nanoplatforms. Herein, recent advances of metal SACs on various types of 2D materials are reviewed, especially their exciting applications in the fields of chemicals, energy, and the environment. Based on the summary and perspectives, this work should contribute to the rational design of perfect metal SACs with versatile properties.