DOI: 10.1039/C9TA08929B, Paper
Plasma-enhanced atomic-layer-deposited GaN thin-films have been introduced into planar perovskite solar cells as electron transport layers.
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Cause and effect: Although the question of the ferroelectricity of CH3NH3PbI3 is of essential importance for understanding its performance, it has long been disputed. Insight into the crystallographic origin of the breaking of the inversion symmetry in the structure, a necessary prerequisite for ferroelectricity, is now provided.
Excellent conversion efficiencies of over 20 % and facile cell production have placed hybrid perovskites at the forefront of novel solar cell materials, with CH3NH3PbI3 being an archetypal compound. The question why CH3NH3PbI3 has such extraordinary characteristics, particularly a very efficient power conversion from absorbed light to electrical power, is hotly debated, with ferroelectricity being a promising candidate. This does, however, require the crystal structure to be non‐centrosymmetric and we herein present crystallographic evidence as to how the symmetry breaking occurs on a crystallographic and, therefore, long‐range level. Although the molecular cation CH3NH3 + is intrinsically polar, it is heavily disordered and this cannot be the sole reason for the ferroelectricity. We show that it, nonetheless, plays an important role, as it distorts the neighboring iodide positions from their centrosymmetric positions.

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Publication date: December 2019
Source: Nano Energy, Volume 66
Author(s): Zhen Wang, Ajay K. Baranwal, Muhammad Akmal kamarudin, Putao Zhang, Gaurav Kapil, Tingli Ma, Shuzi Hayase
All-inorganic perovskites have drawn tremendous attentions in view of their superb thermal stability. However, unavoidable defects near the perovskite surface seriously hampers carrier transport and easily results in ion accumulation at the interface of perovskite layer and charge transport layer. Herein, delocalized thiazole and imidazole derivatives iodide salts functionalized on perovskite surface have been investigated comprehensively. These two salts post-treatment on perovskite could efficiently passivate traps arising from Cs+ or I− vacancies. Additionally, these highly п-conjugated delocalized molecules can contribute to the efficient charge transport and prevent ions accumulation at the interface. As a result, sulfur-contained aminothiazolium iodide (ATI) post-treated CsPbI2Br devices showed simultaneous enhanced current density and voltage due to its higher interaction with perovskite lattice, this led to a champion efficiency of 13.91% with superb fill factor of more than 80%, which exhibited dramatic enhancement compared with the control samples (10.12%). Furthermore, surface passivation with delocalized molecules could effectively stabilize CsPbI2Br phase at room temperature or 80 °C annealing in ambient condition (65% RH). Equally important, this surface passivation allowed competitive efficiency of 11.26% with a large-area device (1.00 cm2). This high kill tolerant approach provide a new route to fabricate inorganic perovskite devices with higher efficiency and stability.
Delocalized molecule surface modification on CsPbI2Br film surface. Delocalized organic agents with ammonium functionalities (-NH3+) were post-treated on CsPbI2Br film for surface passivation, which resulted in larger grains with reduced trap densities. Delocalized п-electrons in molecules also contributed to the more rapid carrier transfer at the interface. As s result, a much-enchaned efficiency of 13.91% with superb fill factor of 80.81% upon thiazole iodide salts treatment was achieved. Stability of perovskite devices with encapsulation under room temperature and 80°C annealing was enhanced significantly. Furthermore, competitive performance of CsPbI2Br perovskite devices with large active area was achieved.
Publication date: Available online 12 October 2019
Source: Nano Energy
Author(s): Pramod M. Rajanna, Hosni Meddeb, Oleg Sergeev, Alexey P. Tsapenko, Sergei Bereznev, Martin Vehse, Olga Volobujeva, Mati Danilson, Peter D. Lund, Albert G. Nasibulin
Transparent electrodes are of great importance in electronics and energy technologies. At present, transparent conductive oxides are mainly n-type conductors dominating the market and have restricted the technological advancements. Single-walled carbon nanotubes (SWCNTs) have recently emerged as promising p-type transparent conductor owing to their superior hole mobility, conductivity, transparency, flexibility and possibility to tune the work function. Here, we develop a novel rational design of p-type flexible transparent conductive film (TCF) based on SWCNTs combined with poly (3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS), molybdenum oxide and SWCNT fibers. In a configuration of SWCNTs-MoO3-PEDOT:PSS/SWCNT fibers, we achieved a record equivalent sheet resistance of 17 Ω/sq with a transmittance of 90% at 550 nm and a high degree of flexibility. We demonstrate that our solar cells developed on the basis of the proposed electrode and hydrogenated amorphous silicon (a-Si:H) yield an outstanding short-circuit current density of Jsc = 15.03 mA/cm2 and a record power conversion efficiency of PCE = 8.8% for SWCNTs/a-Si:H hybrid solar cells. We anticipate that this novel rationally designed p-type TCF opens a new avenue in widespread energy technologies, where high hole conductivity and transparency of the material are prerequisites for their successful implementation.

Publication date: 16 October 2019
Source: Joule, Volume 3, Issue 10
Author(s): Bernard Kippelen
In this issue of Joule, Lami et al. describe a method that enables UV photoemission spectroscopy (UPS) in the transverse dimension of polymeric semiconductor layers with nanometer-scale resolution. The approach is based on the use of Argon gas cluster ion beam (GCIB) etching instead of monoatomic ion bean bombardment. The use of GCIB reduces surface damage, enabling in depth UPS. The method is applied to the study of critical electronic levels and photovoltage in organic solar cells.
Publication date: 18 December 2019
Source: Joule, Volume 3, Issue 12
Author(s): Chenxin Ran, Weiyin Gao, Jingrui Li, Jun Xi, Lu Li, Jinfei Dai, Yingguo Yang, Xingyu Gao, Hua Dong, Bo Jiao, Ioannis Spanopoulos, Christos D. Malliakas, Xun Hou, Mercouri G. Kanatzidis, Zhaoxin Wu
For ecofriendly concerns, Sn-based PSCs have been extensively studied and made inspiring progress during the past few years. Recently, the introduction of large-volume amines (LVAs) (e.g., phenylethylammonium [PEA] and butylammonium [BA]) have shown their promise in enhancing the performance of FASnI3-based PSCs. However, the insulating nature of these LVAs sets limitations on the charge extraction of the film. Herein, a conjugated LVA, 3-phenyl-2-propen-1-amine (PPA), is introduced aiming at promoting charge extraction within FASnI3 film. The presence of PPA is found to enlarge the grain size, passivate the grains, and induce the orientation of the film. These merits of PPA deliver PSCs with PCE of 9.61% on 0.09 cm2 and 7.08% on 1 cm2. Moreover, PPA-based PSCs exhibit robust stability and self-healing behavior. This work sheds critical lights on improving the quality of perovskite film by molecular design of organic cations and highlights the promise of Pb-free PSCs.
The introduction of large-volume amines (LVAs) in Sn-based perovskite films has been shown to lead to promising power conversion efficiency (PCE) in Pb-free perovskite solar cells (PSCs). However, the LVAs adopted so far (e.g., phenylethylammonium [PEA] and butylammonium [BA]) are insulating and could impede charge extraction within the perovskite film. Herein, a conjugated LVA, 3-phenyl-2-propen-1-amine (PPA), is introduced in formamidinium tin iodide (FASnI3) perovskite. Our results show that the incorporation of PPA results in enlarged grain sizes, reduced trap density, preferential orientation, efficient charge extraction, and enhanced structural stability of FASnI3 film. These positive effects help in achieving efficient PSCs with a PCE as high as 9.61% with negligible hysteresis and outstanding stability (remains 92% of its initial PCE value after 1,440 h). Furthermore, the presence of PPA enables a self-healing action of PSCs. Most importantly, we report large-area (1 × 1 cm2) Sn-based PSCs achieving PCE of 7.08%.

The polyelectrolyte‐doped SnO2 film can efficiently improve the perovskite solar cell (PSC) performance and stability. Compared with the pristine SnO2 film, the better energy level alignment, larger built‐in field, enhanced electron transfer/extraction, and reduced charge recombination all contribute to the improved device performance. Finally, a power conversion efficiency of 20.61% is successfully achieved for the PSC prepared under low temperature.
The charge transport layer is crucial to the performance and stability of the perovskite solar cells (PSCs). Compared with other conventional metal oxide electron transport materials, SnO2 has a deeper conduction band and higher electron mobility, and can efficiently serve as an electron transport layer to facilitate charge extraction and transfer. Herein, an optimized low‐temperature solution‐processed SnO2 electron transport layer is achieved by doping polyethylenimine polyelectrolyte into SnO2 for the first time in the PSCs. It is found that the performance of all aspects of the doped SnO2 film is improved over that of the pristine SnO2 film. The better energy level alignment, larger built‐in field, enhanced electron transfer/extraction, and reduced charge recombination all contribute to the improved device performance. Finally, a PSC with a power conversion efficiency of 20.61% is successfully prepared under low temperature below 150 °C. Moreover, the stability of the doped SnO2‐based device is also greatly improved.
High‐quality Cu2O thin films are synthesized by a facile solution method and the Cu2O/Si heterojunction solar cells are fabricated, showing an outstanding photovoltaic performance. Significantly, the photovoltaic conversion efficiency of Cu2O/Si solar cells can be greatly improved to a record value of 9.54% by sequential interfacial engineering.
Cuprous oxide (Cu2O) is a nontoxic and earth‐abundant semiconductor material, which is a promising candidate for low‐cost photovoltaic applications. Although Cu2O‐based solar cells have been studied for a few decades, they still suffer from disappointing photovoltaic performance due to its high trap‐state density and inferior carrier collection efficiency. Herein, a facile solution method is demonstrated to synthesize high‐quality Cu2O films with low defects as hole transport layers (HTLs) and the Cu2O/Si heterojunction solar cells are fabricated. Moreover, a variety of interfacial engineering and light management strategies are adopted to push the efficiency limit of Cu2O/Si solar cells, including a Ag transparent conductive layer, HNO3 passivation, Mg electrode back contact, and MoO x antireflection layer, which enable the boosting of carrier separation and reduce the loss of incident solar light, yielding a record high power conversion efficiency of 9.54%. This work may pave the way for economical and environment‐friendly use of Cu2O/Si heterojunction solar cells in daily life.
Poly(3‐hexylthiophene‐2,5‐diyl) (P3HT) is doped with 0.025 mol% molecular organic Lewis acid bis(pentafluorophenyl)zinc, which exhibits higher hole mobility and well‐matched energy. An enhanced highest power conversion efficiency of 17.49% is achieved for a perovskite solar cell based on doped P3HT without destroying its stability.
The molecular organic Lewis acid bis(pentafluorophenyl)zinc [Zn(C6F5)2] is reported as an efficient p‐type dopant for poly(3‐hexylthiophene‐2,5‐diyl) (P3HT), to be used as hole‐transporting material (HTM) in perovskite solar cells (PSCs) for the first time. To date, the most efficient PSCs use lithium bis(trifluoromethane)sulfonimide lithium salt (LiTFSI) and 4‐tert‐butylpyridine (tBP) as standard additives for HTMs. However, such dopants can induce deleterious effects on device stability. Herein, the effect of the concentration of Zn(C6F5)2 in P3HT HTM on the performance of PSCs is investigated. The P3HT‐based PSCs using a low concentration of the dopant (0.025 mol%) in the HTM layer exhibit the best performance and the highest power conversion efficiency (PCE) of 17.49%, which is almost 3.5% higher than the achieved PCE for pristine P3HT‐based PSCs. The origin of the improved performance for PSCs is further investigated, by studying the conductivity and hole mobility of the thin films based on pristine and doped P3HT. Adding a small amount of Zn(C6F5)2 to P3HT increases its thin‐film hole mobility and its hole extraction ability.
Low‐cost n‐type goethite (FeOOH) quantum dots (QDs) are introduced into the perovskite light‐absorber layer to fabricate efficient and stable perovskite solar cells (PSCs). As a result, the PSCs with FeOOH QDs obtain a significant efficiency enhancement from 16.6% to 19.7%. Most strikingly, the long‐term stability of PSCs with FeOOH QDs is significantly enhanced.
Minimization of defects and ion migration in organic–inorganic lead halide perovskite films is desirable for obtaining photovoltaic devices with high power conversion efficiency (PCE) and long‐term stability. However, achieving this target is still a challenge due to the lack of efficient multifunctional passivators. Herein, to address this issue, n‐type goethite (FeOOH) quantum dots (QDs) are introduced into the perovskite light‐absorption layer for achieving efficient and stable perovskite solar cells (PSCs). It is found that the iron, oxygen, and hydroxyl of FeOOH QDs can interact with iodine, lead, and methylamine, respectively. As a result, the crystallization kinetics process can be retarded, thereby resulting in high quality perovskite films with large grain size. Meanwhile, the trap states of perovskite can be effectively passivated via interaction with the under‐coordinated metal (Pb) cations, halide (I) anions on the perovskite crystal surface. Consequently, the PSCs with FeOOH QDs achieve a high efficiency close to 20% with negligible hysteresis. Most strikingly, the long‐term stability of PSCs is significantly enhanced. Furthermore, compared with the CH3NH3PbI3‐based device, a higher PCE of 21.0% is achieved for the device assembled with a Cs0.05FA0.81MA0.14PbBr0.45I2.55 perovskite layer.
Black phosphorous quantum dots are used as interlayers to modify both electron and hole transport layers in organic solar cells. The power conversion efficiencies of the nonfullerene and fullerene‐based devices are enhanced.
Black phosphorous quantum dots (BPQDs) possess ambipolar charge transport, high mobility, and a tunable direct bandgap. Here, liquid‐exfoliated BPQDs are used as interlayers to modify both the electron transport layer and hole transport layer in organic solar cells (OSCs). The incorporation of BPQDs is beneficial to the formation of a cascade band structure and electron/hole transfer and extraction. The power conversion efficiency of the BPQDs‐incorporated OSC based on PTB7‐Th:FOIC blend is enhanced from 11.8% to 13.1%. In addition, power conversion efficiency enhancement is also achieved for other nonfullerene and fullerene‐based devices, demonstrating the universality of this interlayer methodology.
Replacing a 2,2′,7,7′‐tetrakis[N,N‐di(4‐methoxyphenyl)amino]‐9,9′‐spirobifluorene hole transporting layer with new alternatives such as poly(5,5‐didecyl‐5H‐1,8‐dithia‐as‐indacenone‐alt‐thieno[3,2‐b]thiophene) in mesoscopic perovskite solar cells reduces the fabrication cost and improves the operational stability without sacrificing the efficiency.
Stability is the main challenge in the field of organic–inorganic perovskite solar cells (PSCs). Finding low‐cost and stable hole transporting layer (HTL) is an effective strategy to address this issue. Here, a new donor polymer, poly(5,5‐didecyl‐5H‐1,8‐dithia‐as‐indacenone‐alt‐thieno[3,2‐b]thiophene) (PDTITT), is synthesized and employed as an HTL in PSCs, which has a suitable band alignment with respect to the double‐A cation perovskite film. Using PDTITT, the hole extraction in PSCs is greatly improved as compared to commonly used HTLs such as 2,2′,7,7′‐tetrakis[N,N‐di(4‐methoxyphenyl)amino]‐9,9′‐spirobifluorene (spiro‐OMeTAD), addressing the hysteresis issue. After careful optimization, an efficient PSC is achieved based on mesoscopic TiO2 electron transporting layer with a maximum power conversion efficiency (PCE) of 18.42% based on PDTITT HTL, which is comparable with spiro‐OMeTAD‐based PSC (19.21%). Since spiro‐based PSCs suffer from stability issue, the operational stability in the PSC with PDTITT HTL is studied. It is found that the device with PDTITT retains 88% of its initial PCE value after 200 h under illumination, which is better than the spiro‐based PSC (54%).
Perovskite solar cells still have huge room for improvement in photoelectric conversion efficiency. One of the constraints is the defects at the interface between the perovskite and the transport layer. Passivation is considered a key measure to limit defects. This paper systematically categorizes the effective passivation strategies for perovskites in recent years and gives a future outlook.
The disorderly distribution of defects in the perovskite or at the grain boundaries, surfaces, and interfaces, which seriously affect carrier transport through the formation of nonradiative recombination centers, hinders the further improvement on the power conversion efficiency (PCE) of perovskite solar cells (PSCs). Several defect passivation strategies have been confirmed as an efficient approach for promoting the performance of PSCs. Herein, recent progress in the defect passivation toward efficient perovskite solar cells are summarized, and a classification of common passivation strategies that elaborate the mechanism according to the location of the defects and the type of passivation agent is presented. Finally, this review offers likely prospects for future trends in the development of passivation strategies.
A 0D Cs4PbI6/3D CsPbI3 heterostructure is achieved by tuning the stoichiometry of the precursors. The coexistent Cs4PbI6 not only reduces the grain size of the CsPbI3 and serves as a molecular lock to stabilize the black‐phase CsPbI3, but also passivates the defects in the grain boundaries and improves the surface coverage to improve the device performance to 16.39%.
Although organic–inorganic hybrid perovskite solar cells (PVSCs) have achieved dramatic improvement in device efficiency, their long‐term stability remains a major concern prior to commercialization. To address this issue, extensive research efforts are dedicated to exploiting all‐inorganic PVSCs by using cesium (Cs)‐based perovskite materials, such as α‐CsPbI3. However, the black‐phase CsPbI3 (cubic α‐CsPbI3 and orthorhombic γ‐CsPbI3 phases) is not stable at room temperature, and it tends to convert to the nonperovskite δ‐CsPbI3 phase. Here, a simple yet effective approach is described to prepare stable black‐phase CsPbI3 by forming a heterostructure comprising 0D Cs4PbI6 and γ‐CsPbI3 through tuning the stoichiometry of the precursors between CsI and PbI. Such heterostructure is manifested to enable the realization of a stable all‐inorganic PVSC with a high power conversion efficiency of 16.39%. This work provides a new perspective for developing high‐performance and stable all‐inorganic PVSCs.
Low‐temperature‐processed, UV‐inert ZnTiO3 as a mesoporous layer was introduced in SnO2‐based planar perovskite solar cells. The application of ZnTiO3 modified the interface of SnO2/perovskite, and significantly improve the UV stability and lifetime of devices. The low‐temperature mesoporous structure expands the choice for transmission layer and electrode materials.
Perovskite solar cells (PSCs) with power conversion efficiencies (PCEs) of 25 % mainly have SnO2 or TiO2 as electron‐transporting layers (ETLs). Now, zinc titanate (ZnTiO3, ZTO) is proposed as mesoporous ETLs owing to its weak photo‐effect, excellent carrier extraction, and transfer properties. Uniform mesoporous films were obtained by spinning coating the ZTO ink and annealed below 150 °C. Photovoltaic devices based on Cs0.05FA0.81MA0.14PbI2.55Br0.45 perovskite sandwiched between SnO2‐mesorporous ZTO electrode and Spiro‐OMeTAD layer achieved the PCE of 20.5 %. The PSCs retained more than 95 % of their original efficiency after 100 days lifetime test without being encapsulated. Additionally, the PSCs retained over 95 % of the initial performance when subjected at the maximum power point voltage for 120 h under AM 1.5 G illumination (100 mW cm−2), demonstrating superior working stability. The application of ZTO provides a better choice for ETLs of PSCs.