Run Zhang-UQ

Here a novel ultrathin lutetium oxide (Lu₂O₃) interlayer is integrated with crystalline bismuth vanadate (BiVO₄) thin film photoanodes to facilitate carrier transport through atomic-scale interface control. The epitaxial Lu₂O₃ interlayer fabricated by pulsed laser deposition features very few structural defects at the back contact of the heterojunction, and forms a unique band alignment that favors photohole blocking. An optimized interlayer thickness of 1.4 nm significantly enhances charge separation efficiency and photocurrent. Combined with photoelectrochemical characterization, solid-state electronic, and localized conductive atomic force microscopy measurements, it is revealed that the Lu₂O₃ interlayer modulates the electronic conduction pathways along structural grain boundaries and determines the overall device performance. This study sheds light on the nature of interface-engineered carrier transport for efficient photoelectrode heterostructure design.

A novel epitaxial lutetium oxide interlayer, at a mere thickness of 1.4 nm, is developed as an effective hole-blocking layer to facilitate carrier transport and enhance solar water splitting efficiencies in bismuth vanadate photoanodes. This finding broadens current material selection to design hybrid heterostructures or nanostructures for efficient renewable energy production.