Shared posts

05 Aug 03:21

Author Correction: A dissipatively stabilized Mott insulator of photons

by Ruichao Ma

Nature, Published online: 27 May 2019; doi:10.1038/s41586-019-1221-4

Author Correction: A dissipatively stabilized Mott insulator of photons
05 Aug 03:21

[ASAP] Anomalous Conductance near Percolative Metal–Insulator Transition in Monolayer MoS2 at Low Voltage Regime

by Byoung Hee Moon*†‡§, Jung Jun Bae||§, Gang Hee Han†, Hyun Kim†‡, Homin Choi†‡, and Young Hee Lee*†‡

TOC Graphic

ACS Nano
DOI: 10.1021/acsnano.9b00755
05 Aug 03:21

Fused computing and storage in a 2D transistor

by Du Xiang

Nature Nanotechnology, Published online: 30 May 2019; doi:10.1038/s41565-019-0476-0

The development of devices that exploit the intrinsic properties of two-dimensional materials can provide opportunities for in-memory computing and area-efficient integrated circuits based on Moore’s law.
05 Aug 03:21

Physical origin of giant excitonic and magneto-optical responses in two-dimensional ferromagnetic insulators

by Meng Wu

Nature Communications, Published online: 30 May 2019; doi:10.1038/s41467-019-10325-7

The magneto-optical (MO) effects probe the electronic and magnetic properties of a material, particularly useful for 2D magnets. Here, the authors show that the large optical and MO responses in ferromagnetic monolayer CrI3 arise from strongly bound excitons, extending over several atoms.
05 Aug 03:20

Nanoscale electronic devices based on transition metal dichalcogenides

by Wenjuan Zhu, Tony Low, Han Wang, Peide Ye and Xiangfeng Duan
Two-dimensional (2D) transition metal dichalcogenides (TMDs) have very versatile chemical, electrical and optical properties. In particular, they exhibit rich and highly tunable electronic properties, with a bandgap that spans from semi-metallic up to 2 eV depending on the crystal phase, material composition, number of layers and even external stimulus. This paper provides an overview of the electronic devices and circuits based on 2D TMDs, such as Esaki diodes, resonant tunneling diodes (RTDs), logic and RF transistors, tunneling field-effect transistors (TFETs), static random access memories (SRAMs), dynamic RAM (DRAMs), flash memory, ferroelectric memories, resistitive memories and phase-change memories. We address the basic device principles, the advantages and limitations of these 2D electronic devices, and our perspectives on future developments.
05 Aug 03:20

[ASAP] Thin-Film Deposition of Surface Passivated Black Phosphorus

by Nezhueyotl Izquierdo†, Jason C. Myers‡, Nicholas C. A. Seaton‡, Sushil K. Pandey§, and Stephen A. Campbell*§

TOC Graphic

ACS Nano
DOI: 10.1021/acsnano.9b02385
05 Aug 03:20

Defect induced, layer-modulated magnetism in ultrathin metallic PtSe2

by Ahmet Avsar

Nature Nanotechnology, Published online: 17 June 2019; doi:10.1038/s41565-019-0467-1

Magneto-transport measurements on thin metallic crystals of the transition metal dichalcogenide PtSe2 show signatures of ferro- and antiferromagnetic order depending on the number of layers and first-principles calculations suggest Pt vacancies at the surface as a plausible cause.
05 Aug 03:20

Evidence of anisotropic Majorana bound states in 2M-WS2

by Yonghao Yuan

Nature Physics, Published online: 08 July 2019; doi:10.1038/s41567-019-0576-7

Potential Majorana bound states are seen in the vortex cores of a transition metal dichalcogenide. The properties of the superconductor mean that the bound states are highly anisotropic, and can appear at higher temperatures than other materials.
05 Aug 02:52

Strain-based room-temperature non-volatile MoTe2 ferroelectric phase change transistor

by Wenhui Hou

Nature Nanotechnology, Published online: 10 June 2019; doi:10.1038/s41565-019-0466-2

Strain-induced phase change in MoTe2 enables reversible channel conductivity switching in a field-effect transistor geometry.