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An all‐layer‐inorganic perovskite solar cell (PSC) based on inorganic CsPbI₂Br perovskite absorber layer and tailored NiO hole‐transporting layer (HTL) is fabricated. The tailored NiO nanocrystalline films exhibit uniform, pinhole‐free morphologies, efficient charge‐extraction capabilities, and intrinsic chemical stability, which gives the whole photovoltaic device a high efficiency and much improved stability compared with PSCs based on the organic HTLs.

Cesium‐based inorganic perovskite solar cells (PSCs) have attracted great attention due to the superior thermal stability of the light absorbers. However, the reported devices normally contain organic charge‐transporting layers (CTLs), such as spiro‐OMeTAD, which is expensive and highly sensitive to ambient atmosphere and temperature. It is of great significance to develop inorganic CTLs with low cost and robust stability. To date, it is still a big challenge to achieve high‐quality inorganic CTL films via the solution process, especially for the hole‐transporting layer (HTL) in conventional n‐i‐p structures. Herein, tailored NiO nanocrystalline films as HTLs in an all‐layer‐inorganic CsPbI₂Br‐based PSCs are developed, which exhibit uniform, pinhole‐free morphologies and efficient charge‐extraction capabilities. Consequently, the as‐constructed all‐layer‐inorganic PSCs, with an optimal power conversion efficiency (PCE) of 15.14% and a stabilized power output of 14.82%, present robust long‐term thermal stability: retained 85% of their initial PCEs after a thermal treatment at 85 °C in the dark in a nitrogen atmosphere with encapsulation for 1000 h, greatly surpassing the performance of the PSCs based on the organic HTLs.

New natriumion‐functionalized carbon nano‐dots (CNDs@Na) are rationally designed for planar inverted perovskite solar cells as an interface modification layer to reduce interfacial defects. CNDs@Na interfacial modification passivates surface trap states and reduces trap density at the interface, which facilitates photogenerated holes extraction and suppresses charge recombination.

Realizing the full potential of perovskite photovoltaic requires stringent control over nonradiative losses in the devices. Herein, the interfacial carrier recombination of inverted planar perovskite solar cells (PSCs) is suppressed using rationally designed natriumion‐functionalized carbon nano‐dots (CNDs@Na). The binding effect of carbon dots on Na⁺ inhibits the interstitial occupancy of alkali cations and reduces the microstrain of the polycrystalline film. Furthermore, modified surface wettability improves the ordering and crystal size of perovskite, which restrains ion diffusion and improves interfacial contact, leading to reduced interfacial charge recombination. Consequently, the effective interfacial passivation and crystallization control enhance the photovoltaic performance and long‐term stability of PSCs, resulting in an efficiency of over 20% with negligible hysteresis.

A small‐molecule acceptor (IDTS‐4F) is designed for a ternary approach, which enables the simultaneous increase in open‐circuit voltage and short‐circuit current density without sacrificing fill factor. The two acceptors form homogeneous acceptor phases, which synergize them with the increase in phase purity and crystallinity and the reduction in domain size, whereas the charge mobilities and recombinations are maintained.

Herein, an A–D–A‐type nonfullerene acceptor (named IDTS‐4F) with an alkyl thiophenyl side chain and dimethoxy thiophene bridging unit is reported. The use of an alkyl thiophenyl group is important, as the insertion of sulfur atoms can slightly downshift the highest occupied molecular orbital (HOMO) level of the molecule and allows IDTS‐4F to match with state‐of‐the‐art donor polymer PM6 (or PM7). Compared with conventional nonfullerene acceptors, IT‐4F, the IDTS‐4F molecule, has a smaller optical bandgap and higher lowest unoccupied molecular orbital (LUMO) level, which are beneficial to increase the V _oc and J _sc of the devices. Nonfullerene organic solar cell devices are fabricated using IDTS‐4F. Although the binary device based on IDTS‐4F exhibits a lower fill factor (FF, 70%), the ternary device by incorporating 0.2 of IDTS‐4F and 0.8 of IT‐4F (with PM6 as the donor polymer) can simultaneously achieve a higher V _oc and J _sc, while maintaining the high FF (77%) of IT‐4F based system. Morphology characterizations indicate the formation of homogeneous film morphology, the large increase in phase purity and crystallinity, and the reduction in domain size upon addition of crystalline IDTS‐4F, while the electron/hole mobilities and recombination losses of the IT‐4F system are both maintained.

An electron‐deficient unit containing B←N bonds, namely BNIDT, is developed to construct polymer acceptors for photovoltaic applications. Desirable optoelectronic properties such as broad absorption profiles, low‐lying energy levels, ambipolar charge transport properties, and strong electron‐affinity are found for these polymers. All‐polymer solar cells using these B←N embedded polymers as acceptor materials exhibit an enhanced efficiency of 8.78%.

Abstract

In the field of all‐polymer solar cells (all‐PSCs), all efficient polymer acceptors that exhibit efficiencies beyond 8% are based on either imide or dicyanoethylene. To boost the development of this promising solar cell type, creating novel electron‐deficient units to build high‐performance polymer acceptors is critical. A novel electron‐deficient unit containing B←N bonds, namely, BNIDT, is synthesized. Systematic investigation of BNIDT reveals desirable properties including good coplanarity, favorable single‐crystal structure, narrowed bandgap and downshifted energy levels, and extended absorption profiles. By copolymerizing BNIDT with thiophene and 3,4‐difluorothiophene, two novel conjugated polymers named BN‐T and BN‐2fT are developed, respectively. It is shown that these polymers possess wide absorption spectra covering 350–800 nm, low‐lying energy levels, and ambipolar film‐transistor characteristics. Using PBDB‐T as the donor and BN‐2fT as the acceptor, all‐PSCs afford an encouraging efficiency of 8.78%, which is the highest for all‐PSCs excluding the devices based on imide and dicyanoethylene‐type acceptors. Considering that the structure of BNIDT is totally different from these classical units, this work opens up a new class of electron‐deficient unit for constructing efficient polymer acceptors that can realize efficiencies beyond 8% for the first time.

CsF is adopted to modify the PbI₂ seed for highly crystallized Cs‐doped perovskite film with very long carrier lifetime, and very high light, thermal and humidity stabilities. As a result, the planar perovskite solar cells based on the Cs‐doped film also show very good stability with negligible hysteresis, and display PCEs of over 21%.

Abstract

Adding a small amount of CsI into mixed cation‐halide perovskite film via a one‐step method has been demonstrated as an excellent strategy for high‐performance perovskite solar cells (PSCs). However, the one‐step method generally relies on an antisolvent washing process, which is hard to control and not suitable for fabricating large‐area devices. Here, CsF is employed and Cs is incorporated into perovskite film via a two‐step method. It is revealed that CsF can effectively diffuse into the PbI₂ seed film, and drastically enhances perovskite crystallization, leading to high‐quality Cs‐doped perovskite film with a very long photoluminescence carrier lifetime (1413 ns), remarkable light stability, thermal stability, and humidity stability. The fabricated PSCs show power conversion efficiency (PCE) of over 21%, and they are highly thermally stable: in the aging test at 60 °C for 300 h, 96% of the original PCE remains. The CsF incorporation process provides a new avenue for stable high‐performance PSCs.

Herein, acetate anion (Ac⁻) is used to partially replace I⁻ in the CsPbI₂Br framework. Ac⁻ doping changes the morphology, electronic properties, and band structure of the host CsPbI₂Br film. The obtained CsPbI_{2− x} Br(Ac) _x perovskite solar cells exhibit a power conversion efficiency of 15.56%, an open circuit voltage of 1.30 V, and great air stability.

Abstract

The Cs‐based inorganic perovskite solar cells (PSCs), such as CsPbI₂Br, have made a striking breakthrough with power conversion efficiency (PCE) over 16% and potential to be used as top cells for tandem devices. Herein, I⁻ is partially replaced with the acetate anion (Ac⁻) in the CsPbI₂Br framework, producing multiple benefits. The Ac⁻ doping can change the morphology, electronic properties, and band structure of the host CsPbI₂Br film. The obtained CsPbI_{2− x} Br(Ac) _x perovskite films present lower trap densities, longer carrier lifetimes, and fast charge transportation compared to the host CsPbI₂Br films. Interestingly, the CsPbI_{2− x} Br(Ac) _x PSCs exhibit a maximum PCE of 15.56% and an ultrahigh open circuit voltage (V _oc) of 1.30 V without sacrificing photocurrent. Notably, such a remarkable V _oc is among the highest values of the previously reported CsPbI₂Br PSCs, while the PCE far exceeds all of them. In addition, the obtained CsPbI_{2− x} Br(Ac) _x PSCs exhibit high reproducibility and good stability. The stable CsPbI_{2− x} Br(Ac) _x PSCs with high V _oc and PCE are desirable for tandem solar cell applications.

A UV‐inert ZnTiO₃ is demonstrated to be an electron selective layer in perovskite solar cells. ZnTiO₃ is a perovskite‐structured semiconductor with excellent chemical stability and poor photocatalysis. Planar perovskite solar cells based on ZnTiO₃ exhibit power conversion efficiency of 20.1% with improved photostability. The best device holds 90% of its initial efficiency after 100 h of ultraviolet soaking.

Abstract

Although planar‐structured perovskite solar cells (PSCs) have power conversion efficiencies exceeding 24%, the poor photostability, especially with ultraviolet irradiance (UV) severely limits commercial application. The most commonly‐used TiO₂ electron selective layer has a strong photocatalytic effect on perovskite/TiO₂ interface when TiO₂ is excited by UV light. Here a UV‐inert ZnTiO₃ is reported as the electron selective layer in planar PSCs. ZnTiO₃ is a perovskite‐structured semiconductor with excellent chemical stability and poor photocatalysis. Solar cells are fabricated with a structure of indium doped tin oxide (ITO)/ZnTiO₃/Cs_0.05FA_0.81MA_0.14PbI_2.55Br_0.45/Sprio‐MeOTAD/Au. The champion device exhibits a stabilized power conversion efficiency of 19.8% with improved photostability. The device holds 90% of its initial efficiency after 100 h of UV soaking (365 nm, 8 mW cm⁻²), compared with 55% for TiO₂‐based devices. This work provides a new class of electron selective materials with excellent UV stability in perovskite solar cell applications.

UV‐ozone treatments for different times (0, 10, 30, and 60 min) are examined on the 2D metallic Ti₃C₂T_x films to take advantage of the tunable optoelectronic properties of MXenes as electron transport layers in low‐temperature processed planar‐structured perovskite solar cells, resulting in augmentation of the power conversion efficiency (PCE) from 5.00% to the champion PCE of 17.17%.

Abstract

MXenes are a large and rapidly expanding family of 2D materials that, owing to their unique optoelectronic properties and tunable surface termination, find a wide range of applications including energy storage and energy conversion. In this work, Ti₃C₂T_x MXene nanosheets are applied as a novel type of electron transport layer (ETL) in low‐temperature processed planar‐structured perovskite solar cells (PSCs). Interestingly, simple UV‐ozone treatment of the metallic Ti₃C₂T_x that increases the surface TiO bonds without any change in its bulk properties such as high electron mobility improves its suitability as an ETL. Improved electron transfer and suppressed recombination at the ETL/perovskite interface results in augmentation of the power conversion efficiency (PCE) from 5.00% in the case of Ti₃C₂T_x without UV‐ozone treatment to the champion PCE of 17.17%, achieved using the Ti₃C₂T_x film after 30 min of UV‐ozone treatment. As the first report on the use of pure MXene layer as an ETL in PSCs, this work shows the great potential of MXenes to be used in PSCs and displays their promise for applications in photovoltaic technology in general.

The passivation of the SnO₂ electron transport layer by fullerenes in metal halide perovskite solar cells is studied with X‐ray photoelectron spectroscopy depth profiling. Interfacial binding of fullerenes to the SnO₂ surface is essential for reproducible and effective passivation and improved solar cell performance.

Abstract

Interfaces between the photoactive and charge transport layers are crucial for the performance of perovskite solar cells. Surface passivation of SnO₂ as electron transport layer (ETL) by fullerene derivatives is known to improve the performance of n–i–p devices, yet organic passivation layers are susceptible to removal during perovskite deposition. Understanding the nature of the passivation is important for further optimization of SnO₂ ETLs. X‐ray photoelectron spectroscopy depth profiling is a convenient tool to monitor the fullerene concentration in passivation layers at a SnO₂ interface. Through a comparative study using [6,6]‐phenyl‐C₆₁‐butyric acid methyl ester (PCBM) and [6,6]‐phenyl‐C₆₁‐butyric acid (PCBA) passivation layers, a direct correlation is established between the formation of interfacial chemical bonds and the retention of passivating fullerene molecules at the SnO₂ interface that effectively reduces the number of defects and enhances electron mobility. Devices with only a PCBA‐monolayer‐passivated SnO₂ ETL exhibit significantly improved performance and reproducibility, achieving an efficiency of 18.8%. Investigating thick and solvent‐resistant C₆₀ and PCBM‐dimer layers demonstrates that the charge transport in the ETL is only improved by chemisorption of the fullerene at the SnO₂ surface.

A high power conversion efficiency of 11.76%, the best efficiency for all‐polymer solar cells, is achieved by printing fabrication based on PTzBI‐Si:N2200 processing with 2‐methyltetrahydrofuran. A Multi‐length‐scaled morphology is found in the bulk heterojunctions, which ensures fast transfer of carriers and facilitates exciton separation, and boosts carrier mobility and current density, thus improving the device performance.

Abstract

All‐polymer solar cells (all‐PSCs) exhibit excellent stability and readily tunable ink viscosity, and are therefore especially suitable for printing preparation of large‐scale devices. At present, the efficiency of state‐of‐the‐art all‐PSCs fabricated by the spin‐coating method has exceeded 11%, laying the foundation for the preparation and practical utilization of printed devices. A high power conversion efficiency (PCE) of 11.76% is achieved based on PTzBI‐Si:N2200 all‐PSCs processing with 2‐methyltetrahydrofuran (MTHF, an environmentally friendly solvent) and preparation of active layers by slot die printing, which is the top efficient for all‐PSCs. Conversely, the PCE of devices processed by high‐boiling point chlorobenzene is less than 2%. Through the study of film formation kinetics, volatile solvents can freeze the morphology in a short time, and a more rigid conformation with strong intermolecular interaction combined with the solubility limit of PTzBI‐Si and N2200 in MTHF results in the formation of a fibril network in the bulk heterojunction. The multilength scaled morphology ensures fast transfer of carriers and facilitates exciton separation, which boosts carrier mobility and current density, thus improving the device performance. These results are of great significance for large‐scale printing fabrication of high‐efficiency all‐PSCs in the future.

Application of the proposed slow post‐annealing for layered 2D perovskite solar cells based on BA₂MA₃Pb₄I₁₃ photo‐absorber leads to a favorable alignment on the multi‐perovskite phases and resultant champion power conversion efficiency to 17.26%, showing simultaneously enhanced open‐circuit voltage and short‐circuit current.

Abstract

Layered Ruddlesden–Popper (RP) phase (2D) halide perovskites have attracted tremendous attention due to the wide tunability on their optoelectronic properties and excellent robustness in photovoltaic devices. However, charge extraction/transport and ultimate power conversion efficiency (PCE) in 2D perovskite solar cells (PSCs) are still limited by the non‐eliminable quantum well effect. Here, a slow post‐annealing (SPA) process is proposed for BA₂MA₃Pb₄I₁₃ (n = 4) 2D PSCs by which a champion PCE of 17.26% is achieved with simultaneously enhanced open‐circuit voltage, short‐circuit current, and fill factor. Investigation with optical spectroscopy coupled with structural analyses indicates that enhanced crystal orientation and favorable alignment on the multiple perovskite phases (from the 2D phase near bottom to quasi‐3D phase near top regions) is obtained with SPA treatment, which promotes carrier transport/extraction and suppresses Shockley–Read–Hall charge recombination in the solar cell. As far as it is known, the reported PCE is so far the highest efficiency in RP phase 2D PSCs based on butylamine (BA) spacers (n = 4). The SPA‐processed devices exhibit a satisfactory stability with <4.5% degradation after 2000 h under N₂ environment without encapsulation. The demonstrated process strategy offers a promising route to push forward the performance in 2D PSCs toward realistic photovoltaic applications.

Application of the proposed slow post‐annealing for layered 2D perovskite solar cells based on BA₂MA₃Pb₄I₁₃ photo‐absorber leads to a favorable alignment on the multi‐perovskite phases and resultant champion power conversion efficiency to 17.26%, showing simultaneously enhanced open‐circuit voltage and short‐circuit current.

Abstract

Layered Ruddlesden–Popper (RP) phase (2D) halide perovskites have attracted tremendous attention due to the wide tunability on their optoelectronic properties and excellent robustness in photovoltaic devices. However, charge extraction/transport and ultimate power conversion efficiency (PCE) in 2D perovskite solar cells (PSCs) are still limited by the non‐eliminable quantum well effect. Here, a slow post‐annealing (SPA) process is proposed for BA₂MA₃Pb₄I₁₃ (n = 4) 2D PSCs by which a champion PCE of 17.26% is achieved with simultaneously enhanced open‐circuit voltage, short‐circuit current, and fill factor. Investigation with optical spectroscopy coupled with structural analyses indicates that enhanced crystal orientation and favorable alignment on the multiple perovskite phases (from the 2D phase near bottom to quasi‐3D phase near top regions) is obtained with SPA treatment, which promotes carrier transport/extraction and suppresses Shockley–Read–Hall charge recombination in the solar cell. As far as it is known, the reported PCE is so far the highest efficiency in RP phase 2D PSCs based on butylamine (BA) spacers (n = 4). The SPA‐processed devices exhibit a satisfactory stability with <4.5% degradation after 2000 h under N₂ environment without encapsulation. The demonstrated process strategy offers a promising route to push forward the performance in 2D PSCs toward realistic photovoltaic applications.

Recent progress of inorganic perovskite materials and photovoltaic solar cells is summarized, including materials design, methods for preparing high‐quality perovskite films, phase instabilities, nanocrystals, quantum dots, lead‐free perovskites, device process, and upscaling. In addition, the energy loss mechanisms within the device are discussed and relevant methods are proposed accordingly.

Abstract

All‐inorganic perovskites are considered to be one of the most appealing research hotspots in the field of perovskite photovoltaics in the past 3 years due to their superior thermal stability compared to their organic–inorganic hybrid counterparts. The power‐conversion efficiency has reached 17.06% and the number of important publications is ever increasing. Here, the progress of inorganic perovskites is systematically highlighted, covering materials design, preparation of high‐quality perovskite films, and avoidance of phase instabilities. Inorganic perovskites, nanocrystals, quantum dots, and lead‐free compounds are discussed and the corresponding device performances are reviewed, which have been realized on both rigid and flexible substrates. Methods for stabilization of the cubic phase of low‐bandgap inorganic perovskites are emphasized, which is a prerequisite for highly efficient and stable solar cells. In addition, energy loss mechanisms both in the bulk of the perovskite and at the interfaces of perovskite and charge selective layers are unraveled. Reported approaches to reduce these charge‐carrier recombination losses are summarized and complemented by methods proposed from our side. Finally, the potential of inorganic perovskites as stable absorbers is assessed, which opens up new perspectives toward the commercialization of inorganic perovskite solar cells.

Organic photovoltaic (OPV) cells promise to have a good photovoltaic performance under the indoor light environment. Via optimizing the active layers, 1 cm² OPV cells are fabricated and a top power conversion efficiency of 22% under 1000 lux illumination is demonstrated.

Abstract

Organic photovoltaic (OPV) technologies have the advantages of fabricating larger‐area and light‐weight solar panels on flexible substrates by low‐cost roll‐to‐toll production. Recently, OPV cells have achieved many significant advances with power conversion efficiency (PCE) increasing rapidly. However, large‐scale solar farms using OPV modules still face great challenges, such as device stability. Herein, the applications of OPV cells in indoor light environments are studied. Via optimizing the active layers to have a good match with the indoor light source, 1 cm² OPV cells are fabricated and a top PCE of 22% under 1000 lux light‐emitting diode (2700 K) illumination is demonstrated. In this work, the light intensities are measured carefully. Incorporated with the external quantum efficiency and photon flux spectrum, the integral current densities of the cells are calculated to confirm the reliability of the photovoltaic measurement. In addition, the devices show much better stability under continuous indoor light illumination. The results suggest that designing wide‐bandgap active materials to meet the requirements for the indoor OPV cells has a great potential in achieving higher photovoltaic performance.

Organic photovoltaic (OPV) cells promise to have a good photovoltaic performance under the indoor light environment. Via optimizing the active layers, 1 cm² OPV cells are fabricated and a top power conversion efficiency of 22% under 1000 lux illumination is demonstrated.

Abstract

Organic photovoltaic (OPV) technologies have the advantages of fabricating larger‐area and light‐weight solar panels on flexible substrates by low‐cost roll‐to‐toll production. Recently, OPV cells have achieved many significant advances with power conversion efficiency (PCE) increasing rapidly. However, large‐scale solar farms using OPV modules still face great challenges, such as device stability. Herein, the applications of OPV cells in indoor light environments are studied. Via optimizing the active layers to have a good match with the indoor light source, 1 cm² OPV cells are fabricated and a top PCE of 22% under 1000 lux light‐emitting diode (2700 K) illumination is demonstrated. In this work, the light intensities are measured carefully. Incorporated with the external quantum efficiency and photon flux spectrum, the integral current densities of the cells are calculated to confirm the reliability of the photovoltaic measurement. In addition, the devices show much better stability under continuous indoor light illumination. The results suggest that designing wide‐bandgap active materials to meet the requirements for the indoor OPV cells has a great potential in achieving higher photovoltaic performance.

The OH…I⁻ hydrogen bonding interactions between poly(vinyl alcohol) (PVA) and FASnI₃ have the effects of introducing nucleation sites, slowing down crystal growth, directing the crystal orientation, reducing the trap states, and suppressing the migration of the ions. By adding PVA, the FASnI₃–PVA perovskite solar cells attain improved power conversion efficiency and stability.

Abstract

Tin‐based perovskites with narrow bandgaps and high charge‐carrier mobilities are promising candidates for the preparation of efficient lead‐free perovskite solar cells (PSCs). However, the crystalline rate of tin‐based perovskites is much faster, leading to abundant trap states and much lower open‐circuit voltage (V _oc). Here, hydrogen bonding is introduced to retard the crystalline rate of the FASnI₃ perovskite. By adding poly(vinyl alcohol) (PVA), the OH…I⁻ hydrogen bonding interactions between PVA and FASnI₃ have the effects of introducing nucleation sites, slowing down the crystal growth, directing the crystal orientation, reducing the trap states, and suppressing the migration of the iodide ions. In the presence of the PVA additive, the FASnI₃–PVA PSCs attain higher power conversion efficiency of 8.9% under a reverse scan with significantly improved V _oc from 0.55 to 0.63 V, which is one of the highest V _oc values for FASnI₃‐based PSCs. More importantly, the FASnI₃–PVA PSCs exhibit striking long‐term stability, with no decay in efficiency after 400 h of operation at the maximum power point. This approach, which makes use of the OH…I⁻ hydrogen bonding interactions between PVA and FASnI₃, is generally applicable for improving the efficiency and stability of the FASnI₃‐based PSCs.