Nature Physics, Published online: 20 April 2023; doi:10.1038/s41567-023-02017-3
The spontaneous topological Hall effect, combining non-coplanar antiferromagnetic order with finite scalar spin chirality in the absence of a magnetic field, is now experimentally demonstrated for the triangular lattice compounds CoTa3S6 and CoNb3S6.jinzhitong
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Spontaneous topological Hall effect induced by non-coplanar antiferromagnetic order in intercalated van der Waals materials
Low-temperature MoS2 growth on CMOS wafers
Nature Nanotechnology, Published online: 27 April 2023; doi:10.1038/s41565-023-01390-7
Growth of molybdenum disulfide at 275 °C and monolithic integration of 2D transistors with silicon complementary metal oxide semiconductor circuits have been demonstrated.Low-thermal-budget synthesis of monolayer molybdenum disulfide for silicon back-end-of-line integration on a 200 mm platform
Nature Nanotechnology, Published online: 27 April 2023; doi:10.1038/s41565-023-01375-6
Monolayer MoS2 is grown at the back end of the line of 200 mm silicon CMOS wafers at a temperature of <300 °C, and hybrid silicon CMOS/MoS2 circuits are demonstrated through heterogeneous integration.Wurtzite and fluorite ferroelectric materials for electronic memory
Nature Nanotechnology, Published online: 27 April 2023; doi:10.1038/s41565-023-01361-y
This Review presents the most recent ferroelectric materials with wurtzite structure and emphasizes applications in memory and storage-based microelectronic hardware.Correlated states shine brighter
Nature Materials, Published online: 17 April 2023; doi:10.1038/s41563-023-01539-8
An optical spectroscopy approach unravels different layer-dependent correlated electron phases in a two-dimensional semiconductor heterobilayer.Tunable spin and valley excitations of correlated insulators in Γ-valley moiré bands
Nature Materials, Published online: 17 April 2023; doi:10.1038/s41563-023-01534-z
Electronic compressibility measurements of twisted double-bilayer WSe2 reveal correlated insulators with spin-polaron charged excitations, as well as close competition between moiré bands at Γ and K valleys.Layer-dependent correlated phases in WSe2/MoS2 moiré superlattice
Nature Materials, Published online: 17 April 2023; doi:10.1038/s41563-023-01521-4
The authors demonstrate electrical on/off switching of interlayer interactions in tungsten diselenide/molybdenum disulfide heterobilayers, the phase diagram of which contains layer-dependent correlated regions that reveal the role of strong correlations in interlayer exciton dynamics.Tunable electron–flexural phonon interaction in graphene heterostructures
Nature, Published online: 26 April 2023; doi:10.1038/s41586-023-05879-y
Experimental observation and calculations show that broken reflection symmetry in graphene heterostructures allows tunable electron–flexural phonon coupling, providing a way to control quantum matter at the atomic scale.[ASAP] Theory of Anisotropic Metal Nanostructures

Growth strategy for solution-phase growth of two-dimensional nanomaterials via a unified model
Nature Synthesis, Published online: 30 March 2023; doi:10.1038/s44160-023-00281-y
A lack of guiding principles limits the preparation of two-dimensional (2D) materials prepared by a solution-phase growth route. Now, a general qualitative model for 2D material growth is proposed and applied to fabricate more than 30 nanomaterials, allowing 2D growth to be controlled by only tuning the reaction concentration or temperature.Hot carrier extraction from 2D semiconductor photoelectrodes
Direct characterization of shear phonons in layered materials by mechano-Raman spectroscopy
Nature Photonics, Published online: 30 March 2023; doi:10.1038/s41566-023-01181-5
Mechano-Raman spectroscopy is demonstrated by using interlayer phonons of atomic-layer vibrators to drive synchronous motion of the metallic plasmonic structure that can then be detected. The modulated light scattering brings out the information that cannot be accessed by optical Raman spectroscopy.Excitons in mesoscopically reconstructed moiré heterostructures
Nature Nanotechnology, Published online: 27 March 2023; doi:10.1038/s41565-023-01356-9
Moiré lattice reconstruction on mesoscopic length scales gives rise to diverse exciton signatures within emergent domains of different dimensionality.Resolving the polar interface of infinite-layer nickelate thin films
Nature Materials, Published online: 27 March 2023; doi:10.1038/s41563-023-01510-7
Nickelate superconductivity has so far been limited to thin films, raising questions about the role of the polar substrate–film interface. Here the authors utilize advanced characterization techniques to reveal the interfacial atomic structure and its relevance for superconductivity.Life’s wondrous forms recreated in graphene and more
Nature, Published online: 28 March 2023; doi:10.1038/d41586-023-00878-5
A design strategy that relies on virtual lattices allows scientists to recreate biological shapes in a wide variety of materials.Two-dimensional ferroelectricity in a single-element bismuth monolayer
Nature, Published online: 05 April 2023; doi:10.1038/s41586-023-05848-5
A single-element ferroelectric state is observed in a black phosphorus-like bismuth layer, in which the ordered charge transfer and the regular atom distortion between sublattices happen simultaneously and ferroelectric switching is further visualized experimentally.Giant magnetoresistance of Dirac plasma in high-mobility graphene
Nature, Published online: 12 April 2023; doi:10.1038/s41586-023-05807-0
A Dirac plasma in high-mobility graphene shows anomalous magnetotransport and giant magnetoresistance that reaches more than 100 per cent in a low magnetic field at room temperature.Low-pass filters based on van der Waals ferromagnets
Nature Electronics, Published online: 20 March 2023; doi:10.1038/s41928-023-00941-z
The Curie temperature of Fe5+xGeTe2 thin films can be modulated from 260 to 380 K via iron doping, allowing the two-dimensional material to be used to create planar spiral inductors and low-pass Butterworth filters.Confining quantum spin defects to two dimensions
Nature Physics, Published online: 16 March 2023; doi:10.1038/s41567-023-01947-2
Controlling the spatial distribution of optically active spin defects in solids is a long-standing goal in the quantum sensing and simulation communities. Measurements of the many-body noise generated by the spins were used to verify that a highly coherent and strongly interacting quantum spin system was confined to two dimensions within a diamond substrate.Probing many-body dynamics in a two-dimensional dipolar spin ensemble
Nature Physics, Published online: 16 March 2023; doi:10.1038/s41567-023-01944-5
Solid-state systems are established candidates to study models of many-body physics but have limited control and readout capabilities. Ensembles of defects in diamond may provide a solution for studying dipolar systems.Layer-by-layer disentanglement of Bloch states
Nature Physics, Published online: 23 March 2023; doi:10.1038/s41567-023-02008-4
Layering quantum materials can produce interesting phenomena by combining the different behaviour of electronic states in each layer. A layer-sensitive measurement technique provides insights into the physics of a magnetic topological insulator.Real-space observation of a two-dimensional electron gas at semiconductor heterointerfaces
Nature Nanotechnology, Published online: 20 March 2023; doi:10.1038/s41565-023-01349-8
Differential phase contrast scanning transmission electron microscopy probes the electric field distribution across a GaN-based semiconductor heterointerface.Highly reproducible van der Waals integration of two-dimensional electronics on the wafer scale
Nature Nanotechnology, Published online: 20 March 2023; doi:10.1038/s41565-023-01342-1
A semirigid stamp and a standard photolithography mask-aligner enable a reliable and scalable pickup and release process for van der Waals materials integration at the wafer scale.High-throughput manufacturing of epitaxial membranes from a single wafer by 2D materials-based layer transfer process
Nature Nanotechnology, Published online: 20 March 2023; doi:10.1038/s41565-023-01340-3
Multiple alternating layers of two-dimensional materials and epilayers are grown on III–N and III–V substrates in a single growth run. Then, each epilayer is harvested by mechanical exfoliation, producing multiple freestanding membranes from a single wafer.An in-memory computing architecture based on a duplex two-dimensional material structure for in situ machine learning
Nature Nanotechnology, Published online: 20 March 2023; doi:10.1038/s41565-023-01343-0
By integrating split ferroelectric capacitors with complementary characteristics in the same memory cell, this architecture tackles the problem of conflicting memory requirements for training and inference, which has long plagued edge intelligence applications.Tip-induced excitonic luminescence nanoscopy of an atomically resolved van der Waals heterostructure
Nature Materials, Published online: 16 March 2023; doi:10.1038/s41563-023-01494-4
Tip-induced excitonic luminescence nanoscopy of an atomically resolved van der Waals heterostructure.Growth of single-crystal black phosphorus and its alloy films through sustained feedstock release
Nature Materials, Published online: 23 March 2023; doi:10.1038/s41563-023-01516-1
Subcentimetre-size black phosphorous and its alloy films have been achieved on conventional substrates through sustained feedstock release design, and exhibit high crystalline quality and composition-dependent bandgap tunability.Gate-tunable heavy fermions in a moiré Kondo lattice
Nature, Published online: 15 March 2023; doi:10.1038/s41586-023-05800-7
A Kondo lattice was realized in AB-stacked MoTe2/WSe2 moiré bilayers and widely and continuously gate-tunable Kondo temperatures were demonstrated.2D fin field-effect transistors integrated with epitaxial high-k gate oxide
Nature, Published online: 22 March 2023; doi:10.1038/s41586-023-05797-z
The epitaxial synthesis of high-density, vertically aligned arrays of two-dimensional (2D) fin-oxide heterostructures is described, enabling the fabrication of 2D fin field-effect transistors with high electron mobility and desirable low-power specifications.Ballistic two-dimensional InSe transistors
Nature, Published online: 22 March 2023; doi:10.1038/s41586-023-05819-w
A two-dimensional field-effect transistor made of indium selenide is shown to outperform state-of-the-art silicon-based transistors, operating at lower supply voltage and achieving record high transconductance and ballistic ratio.