wangzhaowei

In this work, both anode and cathode interfaces of p-i-n CH₃NH₃PbI₃ perovskite solar cells (PVSCs) are simultaneously modified to achieve large open-circuit voltage (V_oc) and fill factor (FF) for high performance semitransparent PVSCs (ST-PVSCs). At the anode, modified NiO serves as an efficient hole transport layer with appropriate surface property to promote the formation of smooth perovskite film with high coverage. At the cathode, a fullerene bisadduct, C₆₀(CH₂)(Ind), with a shallow lowest unoccupied molecular orbital level, is introduced to replace the commonly used phenyl-C₆₁-butyric acid methyl ester (PCBM) as an alternative electron transport layer in PVSCs for better energy level matching with the conduction band of the perovskite layer. Therefore, the V_oc, FF and power conversion efficiency (PCE) of the PVSCs increase from 1.05 V, 0.74 and 16.2% to 1.13 V, 0.80 and 18.1% when the PCBM is replaced by C₆₀(CH₂)(Ind). With the advantages of high V_oc and FF, ST-PVSCs are also fabricated using an ultrathin transparent Ag as cathode, showing an encouraging PCEs of 12.6% with corresponding average visible transmittance (AVT) over 20%. These are the highest PCEs reported for ST-PVSCs with similar AVTs paving the way for using ST-PVSCs as power generating windows.

The anode and cathode interfaces of CH₃NH₃PbI₃ perovskite solar cells are optimized simultaneously. The shallow lowest unoccupied molecular level of C₆₀(CH₂)(Ind) provides better energy level alignment and surface passivation. High performance opaque cell with a power conversion efficiency (PCE) of 18.1% (V_oc: 1.13 V, FF: 0.8) and semitransparent cell with a PCE of 12.6% (AVT>20%) are achieved.

The p-type inorganic semiconductor CuGaO₂ as a hole-transporting layer (HTL) in perovskite solar cells (PSCs) provides higher carrier mobility, better-energy level matching, and superior stability, as well as low-temperature processing technique. Compared to organic HTL, a very competitive PCE of 18.51% with long-term stability is achieved. This indicates that CuGaO₂ is a promising HTL for efficient and stable PSCs.

The spin on a ferromagnetic Co surface can interact with the asymmetric orbital on an organometal halide perovskite surface, leading to an anisotropic magnetodielectric effect. This study presents an opportunity to integrate ferromagnetic and semiconducting properties through the Rasbha effect for achieving spin-dependent electronic functionalities based on thin-film design.

Air-stable doping of the n–type fullerene layer in an n–i–p planar heterojunction perovskite device is capable of enhancing device efficiency and improving device stability. Employing a (HC(NH₂)₂)_0.83Cs_0.17Pb(I_0.6Br_0.4)₃ perovskite as the photoactive layer, glass–glass laminated devices are reported, which sustain 80% of their “post burn-in” efficiency over 3400 h under full sun illumination in ambient conditions.