Jiuxiang Dai
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A highly efficient atomically thin curved PdIr bimetallene electrocatalyst
[ASAP] All-Solid, Ultra-Micro, and Ultrasensitive pH Sensor by Monolayer MoS2-Based Array Field-Effect Transistors

Challenges and recent advances in photodiodes-based organic photodetectors
Publication date: December 2021
Source: Materials Today, Volume 51
Author(s): Junwei Liu, Mengyuan Gao, Juhee Kim, Zhihua Zhou, Dae Sung Chung, Hang Yin, Long Ye
Extremely Uniform Graphene Oxide Thin Film as a Universal Platform for One‐Step Biomaterial Patterning
An extremely uniform graphene oxide thin film (UGTF) is fabricated via a new method that is based on preheating treatment, controlling the properties of the suspension and low electrical energy plasma treatment. UTGF can also be uniformly patterned at the microscale. This technique is effective in one-step micropatterning of antibodies and cancer cells.
Abstract
Graphene oxide (GO) has proven to be a highly promising material across various biomedical research avenues, including cancer therapy and stem cell-based regenerative medicine. However, creating a uniform GO coating as a thin layer on desired substrates has been considered challenging owing to the intrinsic variability of the size and shape of GO. Herein, a new method is introduced that enables highly uniform GO thin film (UGTF) fabrication on various biocompatible substrates. By optimizing the composition of the GO suspension and preheating process to the substrates, the “coffee-ring effect” is significantly suppressed. After applying a special postsmoothing process referred to as the low-oxygen concentration and low electrical energy plasma (LOLP) treatment, GO is converted to small fragments with a film thickness of up to several nanometers (≈5.1 nm) and a height variation of only 0.6 nm, based on atomic force microscopy images. The uniform GO thin film can also be generated as periodic micropatterns on glass and polymer substrates, which are effective in one-step micropatterning of both antibodies and mouse melanoma cells (B16-F10). Therefore, it can be concluded that the developed UGTF is useful for various graphene-based biological applications.
Manifestation of Strongly Correlated Electrons in a 2D Kagome Metal–Organic Framework
Materials with a 2D kagome crystal structure yield potential for a wide range of tunable topological and correlated electron phases. The emergence of local magnetic moments resulting from strong electron-electron Coulomb interactions in a 2D kagome metal–organic framework is demonstrated. These findings pave the way for tunable electron correlations—and hence controllable electronic and magnetic quantum phases—in 2D organic materials.
Abstract
2D and layered electronic materials characterized by a kagome lattice, whose valence band structure includes two Dirac bands and one flat band, can host a wide range of tunable topological and strongly correlated electronic phases. While strong electron correlations have been observed in inorganic kagome crystals, they remain elusive in organic systems, which benefit from versatile synthesis protocols via molecular self-assembly and metal-ligand coordination. Here, direct experimental evidence of local magnetic moments resulting from strong electron–electron Coulomb interactions in a 2D metal–organic framework (MOF) is reported. The latter consists of di-cyano-anthracene (DCA) molecules arranged in a kagome structure via coordination with copper (Cu) atoms on a silver surface [Ag(111)]. Temperature-dependent scanning tunneling spectroscopy reveals magnetic moments spatially confined to DCA and Cu sites of the MOF, and Kondo screened by the Ag(111) conduction electrons. By density functional theory and mean-field Hubbard modeling, it is shown that these magnetic moments are the direct consequence of strong Coulomb interactions between electrons within the kagome MOF. The findings pave the way for nanoelectronics and spintronics technologies based on controllable correlated electron phases in 2D organic materials.
Direct Chemical Vapor Deposition Synthesis of Porous Single‐Layer Graphene Membranes with High Gas Permeances and Selectivities
Porous single-layer graphene membranes for gas separation are synthesized by one-step chemical vapor deposition (CVD). Highly dense gas-sieving pores are created in graphene by tuning the CVD parameters. The resulting graphene membranes exhibit record-high H2/CH4 separation performance to date: H2/CH4 selectivity > 2000 while H2 permeance > 4000 GPU.
Abstract
Single-layer graphene containing molecular-sized in-plane pores is regarded as a promising membrane material for high-performance gas separations due to its atomic thickness and low gas transport resistance. However, typical etching-based pore generation methods cannot decouple pore nucleation and pore growth, resulting in a trade-off between high areal pore density and high selectivity. In contrast, intrinsic pores in graphene formed during chemical vapor deposition are not created by etching. Therefore, intrinsically porous graphene can exhibit high pore density while maintaining its gas selectivity. In this work, the density of intrinsic graphene pores is systematically controlled for the first time, while appropriate pore sizes for gas sieving are precisely maintained. As a result, single-layer graphene membranes with the highest H2/CH4 separation performances recorded to date (H2 permeance > 4000 GPU and H2/CH4 selectivity > 2000) are fabricated by manipulating growth temperature, precursor concentration, and non-covalent decoration of the graphene surface. Moreover, it is identified that nanoscale molecular fouling of the graphene surface during gas separation where graphene pores are partially blocked by hydrocarbon contaminants under experimental conditions, controls both selectivity and temperature dependent permeance. Overall, the direct synthesis of porous single-layer graphene exploits its tremendous potential as high-performance gas-sieving membranes.
Wafer‐Scale 2D Hafnium Diselenide Based Memristor Crossbar Array for Energy‐Efficient Neural Network Hardware
A 2D hafnium diselenide (HfSe2) memristor crossbar array (CBA) is demonstrated via wafer-scale molecular beam epitaxy growth and metal-assisted van der Waals transfer techniques. The CBA enables artificial neural network with high recognition accuracy of 93.34%, and achieves hardware convolution image processing using energy-efficient multiply-and accumulate operations.
Abstract
Memristor crossbar with programmable conductance could overcome the energy consumption and speed limitations of neural networks when executing core computing tasks in image processing. However, the implementation of crossbar array (CBA) based on ultrathin 2D materials is hindered by challenges associated with large-scale material synthesis and device integration. Here, a memristor CBA is demonstrated using wafer-scale (2-inch) polycrystalline hafnium diselenide (HfSe2) grown by molecular beam epitaxy, and a metal-assisted van der Waals transfer technique. The memristor exhibits small switching voltage (0.6 V), low switching energy (0.82 pJ), and simultaneously achieves emulation of synaptic weight plasticity. Furthermore, the CBA enables artificial neural network with a high recognition accuracy of 93.34%. Hardware multiply-and-accumulate (MAC) operation with a narrow error distribution of 0.29% is also demonstrated, and a high power efficiency of greater than 8-trillion operations per second per Watt is achieved. Based on the MAC results, hardware convolution image processing can be performed using programmable kernels (i.e., soft, horizontal, and vertical edge enhancement), which constitutes a vital function for neural network hardware.
Doping Process of 2D Materials Based on the Selective Migration of Dopants to the Interface of Liquid Metals
The interface of liquid metals is used as natural filtering for doping and harvesting 2D doped metal oxide semiconductors. 2D Bi2O3-doped SnO semiconducting sheets are produced based on the different migration tendencies of Sn and Bi metals within the bulk competing for the selective enrichment of the liquid metal interface.
Abstract
The introduction of trace impurities within the doping processes of semiconductors is still a technological challenge for the electronics industries. By taking advantage of the selective enrichment of liquid metal interfaces, and harvesting the doped metal oxide semiconductor layers, the complexity of the process can be mitigated and a high degree of control over the outcomes can be achieved. Here, a mechanism of natural filtering for the preparation of doped 2D semiconducting sheets based on the different migration tendencies of metallic elements in the bulk competing for enriching the interfaces is proposed. As a model, liquid metal alloys with different weight ratios of Sn and Bi in the bulk are employed for harvesting Bi2O3-doped SnO nanosheets. In this model, Sn shows a much stronger tendency than Bi to occupy surface sites of the Bi–Sn alloys, even at the very high concentrations of Bi in the bulk. This provides the opportunity for creating SnO 2D sheets with tightly controlled Bi2O3 dopants. By way of example, it is demonstrated how such nanosheets could be made selective to both reducing and oxidizing environmental gases. The process demonstrated here offers significant opportunities for future synthesis and fabrication processes in the electronics industries.
Interpreting 2D Materials Bio‐Nano Interactions: Influence of Aggregation Status, Protein Corona, Cell Culture Media, and Cell Types (Adv. Mater. Interfaces 17/2021)
Interpreting 2D Materials Bio-Nano Interactions
In article number 2100251, Khuloud T. Al-Jamal and co-workers demonstrate that the interpretation of bio-nano interactions for 2D nanomaterials requires extra care. Minor surface chemistry changes on 2D nanomaterials result in various serum protein binding levels, colloidal stabilities, and aggregation status in biological media. Thus, using label-free approaches such as Synchrotron radiation-based Fourier-transform infrared spectromicroscopy (SR-FTIR) provides an alternative gateway to study the bio-nano interfaces in the naïve form.
Synthesis of Wet‐Chemically Prepared Porous‐Graphene Single Layers on Si/SiO2 Substrate Increasing the Photoluminescence of MoS2 in Heterostructures (Adv. Mater. Interfaces 17/2021)
Porous-Graphene Single Layers on SI/SIO2
Porous graphene is synthesized from oxo-functionalized graphene (oxoG), as reported in article number 2100783 by Siegfried Eigler and co-workers. The 3D atomic force microscopy image of oxoG with pores on the 100 nm scale looks like a mountain with ridges. The red pits represent the pores. The higher peaks around the pits represent the active sites, which are easily hit by lightning. The lightning has a two-fold meaning, the etching of pores and the enhancement of photoluminescence of MoS2 by the porous graphene.
Motional narrowing, ballistic transport, and trapping of room-temperature exciton polaritons in an atomically-thin semiconductor
Nature Communications, Published online: 10 September 2021; doi:10.1038/s41467-021-25656-7
Room-temperature exciton polaritons in a monolayer WS2 are shown to display strong motional narrowing of the linewidth and enhanced first-order coherence. They can propagate for tens of micrometers while maintaining partial coherence, and display signatures of ballistic (dissipationless) transport.Recent Progress on Synthesis, Characterization, and Applications of Metal Halide Perovskites@Metal Oxide
This review summarizes the latest research related to the strategies to fabricate the metal halide perovskites@metal oxide (MHPs@MO x ) composites, techniques to systematically evaluate the performances, and structures of the composites. Recent achievements in various applications are also presented based on different MO x . Finally, conclusions and future research prospects are also outlined to ensure a bright future of MHPs@MO x .
Abstract
Metal halide perovskites (MHPs) have become a promising candidate in a myriad of applications, such as light-emitting diodes, solar cells, lasing, photodetectors, photocatalysis, transistors, etc. This is related to the synergy of their excellent features, including high photoluminescence quantum yields, narrow and tunable emission, long charge carrier lifetimes, broad absorption spectrum along with high extinction absorptions coefficients, among others. However, the main bottleneck is the poor stability of the MHPs under ambient conditions. This is imposing severe restrictions with respect to their industrialized applications and commercialization. In this context, metal oxide (MO x ) coatings have recently emerged as an efficient strategy toward overcoming the stabilities issues as well as retaining the excellent properties of the MHPs, and therefore facilitate the development of the related devices’ stabilities and performances. This review provides a summary of the recent progress on synthetic methods, enhanced features, the techniques to assess the MHPs@MO x composites, and applications of the MHPs@MO x . Specially, novel approaches to fabricate the composites and new applications of the composites are also reported in this review for the first time. This is rounded by a critical outlook about the current MHPs’ stability issues and the further direction to ensure a bright future of MHPs@MO x .
Direct Charge Trapping Multilevel Memory with Graphdiyne/MoS2 Van der Waals Heterostructure
A graphdiyne (GDY)/MoS2 bilayer memory without any blocking layer is constructed. Through controllable oxygen plasma treatment, relatively large-area and smooth 2D GDY with additionally introduced CO and C═O is obtained, which enables excellent van der Waals coupling with MoS2 and allows for constructing the bilayer memory. With more introduced states, multilevel and dual operating mode is achieved.
Abstract
Direct charge trapping memory, a new concept memory without any dielectric, has begun to attract attention. However, such memory is still at the incipient stage, of which the charge-trapping capability depends on localized electronic states that originated from the limited surface functional groups. To further advance such memory, a material with rich hybrid states is highly desired. Here, a van der Waals heterostructure design is proposed utilizing the 2D graphdiyne (GDY) which possesses abundant hybrid states with different chemical groups. In order to form the desirable van der Waals coupling, the plasma etching method is used to rapidly achieve the ultrathin 2D GDY with smooth surface for the first time. With the plasma-treated 2D GDY as charge-trapping layer, a direct charge-trapping memory based on GDY/MoS2 is constructed. This bilayer memory is featured with large memory window (90 V) and high degree of modulation (on/off ratio around 8 × 107). Two operating mode can be achieved and data storage capability of 9 and 10 current levels can be obtained, respectively, in electronic and opto-electronic mode. This GDY/MoS2 memory introduces a novel application of GDY as rich states charge-trapping center and offers a new strategy of realizing high performance dielectric-free electronics, such as optical memories and artificial synaptic.
Strain-Driven Dzyaloshinskii-Moriya Interaction for Room-Temperature Magnetic Skyrmions
Author(s): Yuelin Zhang, Jie Liu, Yongqi Dong, Shizhe Wu, Jianyu Zhang, Jie Wang, Jingdi Lu, Andreas Rückriegel, Hanchen Wang, Rembert Duine, Haiming Yu, Zhenlin Luo, Ka Shen, and Jinxing Zhang
Dzyaloshinskii-Moriya interaction in magnets, which is usually derived from inversion symmetry breaking at interfaces or in noncentrosymmetric crystals, plays a vital role in chiral spintronics. Here we report that an emergent Dzyaloshinskii-Moriya interaction can be achieved in a centrosymmetric ma...
[Phys. Rev. Lett. 127, 117204] Published Fri Sep 10, 2021
MoS2 flake as a van der Waals homostructure: luminescence properties and optical anisotropy
DOI: 10.1039/D1NR05439B, Paper
We investigated multilayer plates prepared by exfoliation from a high-quality MoS2 crystal and revealed that they represent a new object – a van der Waals homostructure consisting of a bulk core and a few detached monolayers on its surface.
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[ASAP] Time- and Temperature-Dependent Growth Behavior of Ionic Liquids on Au(111) Studied by Atomic Force Microscopy in Ultrahigh Vacuum

[ASAP] Mechanistic Insights into the Structural Modulation of Transition Metal Selenides to Boost Potassium Ion Storage Stability

[ASAP] Self-Assembly of CsPbBr3 Nanocubes into 2D Nanosheets

[ASAP] Critical Review on the Physical Properties of Gallium-Based Liquid Metals and Selected Pathways for Their Alteration

Three-dimensional monolithic micro-LED display driven by atomically thin transistor matrix
Nature Nanotechnology, Published online: 09 September 2021; doi:10.1038/s41565-021-00966-5
Low-temperature ultraclean integration of large-area MoS2 thin-film transistors with nitride micro-LEDs through a back end of line process enables the demonstration of displays with high resolution and uniformity.[ASAP] Optimization Strategies for High Photoluminescence Quantum Yield of Monolayer Chemical Vapor Deposition Transition Metal Dichalcogenides

[ASAP] Photocarrier Dynamics in MoTe2 Nanofilms with 2H and Distorted 1T Lattice Structures

Optical versus electron diffraction imaging of Twist-angle in 2D transition metal dichalcogenide bilayers
npj 2D Materials and Applications, Published online: 09 September 2021; doi:10.1038/s41699-021-00258-5
Optical versus electron diffraction imaging of Twist-angle in 2D transition metal dichalcogenide bilayersSecond Floor of Flatland: Epitaxial Growth of Graphene on Hexagonal Boron Nitride (Small 36/2021)
Stacked 2D Materials
Stacked two-dimensional materials are achieved and analyzed in a surface science approach: Hexagonal boron nitride (h-BN) is formed on Pt(111) by the thermal decomposition of molecular precursor ammonia borane. A temporary Pt film deposited on h-BN serves as the platform for subsequent graphene growth using ethylene. The intercalation of the film through h-BN results in the desired van der Waals stacking. More details can be found in article 2102747 by Jörg Kröger and co-workers.
[ASAP] Design Principles for Multinary Metal Chalcogenides: Toward Programmable Reactivity in Energy Conversion†

[ASAP] Raman Spectroscopy and In Situ XRD Probing of the Thermal Decomposition of Sb2Se3 Thin Films

[ASAP] Mixed-Salt Enhanced Chemical Vapor Deposition of Two-Dimensional Transition Metal Dichalcogenides

Wafer‐Scale Functional Metasurfaces for Mid‐Infrared Photonics and Biosensing
To further move “meta-photonics” toward real-world applications, a complementary metal–oxide–semiconductor (CMOS)-compatible nanofabrication method is developed for free-standing dielectric and plasmonic metasurfaces. The advantages of this method are revealed by demonstrating uniform and functional metasurfaces, including large-area metalenses for diffraction-limited focusing, spectrally selective high-quality-factor nanostructures, polarization-control birefringent metasurfaces, and aluminum plasmonic optofluidic biosensors.
Abstract
Metasurfaces have emerged as a breakthrough platform for manipulating light at the nanoscale and enabling on-demand optical functionalities for next-generation biosensing, imaging, and light-generating photonic devices. However, translating this technology to practical applications requires low-cost and high-throughput fabrication methods. Due to the limited choice of materials with suitable optical properties, it is particularly challenging to produce metasurfaces for the technologically relevant mid-infrared spectral range. These constraints are overcome by realizing functional metasurfaces on almost completely transparent free-standing metal-oxide membranes. A versatile nanofabrication process is developed and implemented for highly efficient dielectric and plasmonic mid-infrared metasurfaces with wafer-scale and complementary metal–oxide–semiconductor (CMOS)-compatible manufacturing techniques. The advantages of this method are revealed by demonstrating highly uniform and functional metasurfaces, including high-Q structures enabling fine spectral selectivity, large-area metalenses with diffraction-limited focusing capabilities, and birefringent metasurfaces providing polarization control at record-high conversion efficiencies. Aluminum plasmonic devices and their integration into microfluidics for real-time and label-free mid-infrared biosensing of proteins and lipid vesicles are further demonstrated. The versatility of this approach and its compatibility with mass-production processes bring infrared metasurfaces markedly closer to commercial applications, such as thermal imaging, spectroscopy, and biosensing.
A Self‐Growth Strategy for Simultaneous Modulation of Interlayer Distance and Lyophilicity of Graphene Layers toward Ultrahigh Potassium Storage Performance
A novel self-growth strategy to precisely regulate the interlayer distance and lyophilicity of graphene layers simultaneously is demonstrated for the first time. The synergistic effect of expanded interlayer distance and enhanced lyophilicity can significantly improve the potassium ion storage performance, which has rarely been achieved before.
Abstract
Herein, a simple but effective self-growth strategy to simultaneously modulate the interlayer distance and lyophilicity of graphene layers, which results in ultrahigh potassium-storage performances for carbon materials, is reported. This strategy involves the uniform adsorption of individual metal ions on the oxygen-containing groups on graphene oxide via electrostatic/coordination interactions and in situ self-conversion reaction between the metal ions and the oxygen-containing groups to form lyophilic ultrasmall metal oxide nanoparticles modified/intercalated graphene skeleton (OM-G) with precisely regulated interlayer distance. The synergistic effect of expanded interlayer distance and enhanced lyophilicity is revealed for the first time to significantly reduce the ion diffusion barrier and enhance ion transport kinetics by experimental and theoretical analysis. As a result, such unique OM-G monolith as free-standing anode for potassium-ion battery (PIB) delivered an ultrahigh reversible capability of 496.4 mAh g−1 at 0.1 A g−1, excellent rate capability (306.6 mAh g−1 at 10 A g−1), and remarkable long-term cycling stability (96.3% capacity retention over 2000 cycles at 1 A g−1), which are not only much better than those of previous graphene/carbon materials but also among the best performances for all PIB anodes ever reported. This study provides new fundamental insights for boosting the electrochemical properties of electrode materials.