Jiuxiang Dai

Nature Photonics, Published online: 02 January 2025; doi:10.1038/s41566-024-01603-y

Hybrid hetero-integration of dual-functional perovskite diodes and a photonic neural network for computing tasks are demonstrated on a near-infrared monolithic on-chip photonic system based on a perovskite/silicon nitride platform, exemplifying the extension of perovskite device applications.

Nature Photonics, Published online: 02 January 2025; doi:10.1038/s41566-024-01579-9

An on-chip, high-bandwidth-density non-Hermitian hybrid switching network based on the integration of III–V and silicon materials is demonstrated, paving the way for compact and ultrafast monolithic integrated silicon photonics for large-scale and high-dimensional information processing.

Initiated Chemical Vapor Deposition (iCVD) offers precise control over the morphology of polymeric and hybrid thin films, enabling the fabrication of ultrasmooth films as well as self-assembled nanostructures. This review highlights recent advances in reactor design and the development of novel surface structures across multiple length scales, demonstrating their diverse applications in the fields including energy storage, biointerfaces, and optical devices.

Abstract

Initiated Chemical Vapor Deposition (iCVD) is a versatile and powerful technique for controlling the morphology of polymeric and hybrid thin films, with applications spanning from electronics to biomedical devices. This review highlights recent advancements in iCVD technology that enable precise morphological control from creating ultrasmooth films to self-assembled nanostructures. Advances in reactor design now allow for in situ monitoring of key parameters, such as film thickness and surface imaging, providing real-time insights into material morphology. Surface morphology is influenced by both the substrate and coating layer. For the former, iCVD offers significant advantages in creating defect-free, conformal coatings over complex substrates, making it particularly well-suited for flexible electronics, optical devices, and antifouling/antimicrobial biointerfaces. For the latter, iCVD has been leveraged for the fabrication of microstructured coatings that improve energy storage, gas sensing, and pathogen detection, superhydrophobic or anti-icing surfaces. Its all-dry processing and compatibility with temperature-sensitive substrates further emphasize its potential for sustainable manufacturing. The ability to fine-tune film chemistry and morphology, combined with the scalability, positions iCVD as a promising tool for addressing future technological challenges in advanced materials design.

A superlinear photoresponse, broadband, polarization-sensitive, and self-powered photodetector based on a well-defined p-Te/n-MoS₂ vdW heterojunction are proposed and experimentally demonstrated. As a pioneering study, this work provides an alternative strategy to achieve superlinearity in high-performing optoelectronic devices under extreme conditions.

Abstract

Photodetectors exhibiting robust superlinear photoresponse characteristics can overcome the limitations of traditional devices whose figures-of-merits decrease with increasing light irradiance at high levels, thereby providing a significant breakthrough for the development of intelligent optical devices with low power consumption and high efficiency. Herein, a p-Te/n-MoS₂ van der Waals heterojunction photodetector is experimentally achieved that exhibits self-powering operation, fast response speed, broadband, and polarization-sensitive photodetection. When exposed to 570 nm illumination at 0 V bias, the detector demonstrates excellent performance, including a responsivity of 74 mA W⁻¹, a specific detectivity of 4.1 × 10¹⁰ Jones, fast rising/falling times of 35/34 µs and a high photocurrent anisotropy ratio of 1.85. The device maintains competitive photodetection properties upon intense lights in comparison with its competitors, which is attributed to its superlinear photoresponse. Specifically, its superlinear photoresponse value reaches up to 2.0 at 254 nm, while it also showcases outstanding superlinear values in the broadband response regions. Associated with theoretical analysis, the superlinear photoresponse is primarily attributed to the photogating layer mechanism of 1D Te single crystals and their excellent hole conduction capability. This study paves the way for creating high-performance photodetectors with potential applications in high-resolution imaging, spectral analysis, neuromorphic networks, and others.

The first Sc-based chalcophosphate NLO material CsScP₂S₇ featuring the new triangular peak-like functional motif ScP₂S₁₁ exhibits wide band gap (3.10 eV), strong SHG response (0.8 × AGS), high LIDT (4.3 × AGS), moderate birefringence and phase matching behavior. Comprehensive results show that CsScP₂S₇ is a promising IR NLO material with giant potential.

Abstract

Chalcogenides are the most important infrared nonlinear optical (NLO) material candidates, and the exploration of high-performance ones is attractive and challengeable. Hitherto, there is no NLO scandium (Sc) chalcogenides experimentally studied. Here, new quaternary Sc thiophosphate CsScP₂S₇ (CSPS) was synthesized by the facile metal oxide-boron-sulfur/reactive flux hybrid solid-state method. It crystallizes in the monoclinic chiral space group C2, and the layered structure is composed by the new ScP₂S₁₁ functional motifs built by ScS₆ octahedra and P₂S₇ dimers, and the structure-performance analysis reveals that the hyperpolarizability of ScP₂S₁₁ is much greater than the assembled units (ScS₆ and PS₄), which makes the first NLO Sc chalcogenide CSPS exhibits strong NLO response (0.8 × AGS) and high laser-induced damage threshold (LIDT) (4.3 × AGS), and a wide bandgap of 3.10 eV. With the coordination number's reduction of rare-earth (RE) ion and the rearrangement of P₂S₇ dimers, the centrosymmetric structure of CsREP₂S₇ family can be broken via substitution with the smallest RE element Sc to form the noncentrosymmetric structure. This work not only discovers a new high-performance infrared NLO material, but also will inspire researchers to explore more potential NLO Sc chalcogenides.

The successful development of 2D ferroelectric metal-organic frameworks (MOF) nanosheets, with a large polarization retained down to 7 nm, enables the fabrication of ferroelectric field effect transistors (FeFETs) with ultralow power consumption and tunable memory windows, ideal for next-generation memory, and computing devices.

Abstract

2D ferroelectrics open a new realm of nonvolatile memory and computing devices, while metal–organic frameworks (MOF) offer tremendous possibilities to design and optimize ferroelectric performance. Integrating a MOF ferroelectric gate with a semiconducting channel provides new strategy toward ultralow power ferroelectric field effect transistors (FeFETs), yet no 2D MOF is experimentally demonstrated to be ferroelectric yet. Here, the study successfully develops 2D ferroelectric MOF nanosheets, {CuL₂(H₂O)₂(NO₃)₂(H₂O)_1.5·(CH₃OH)}_∞ wherein L denotes PhPO(NH⁴Py)₂, abbreviated as {Cu^IIL₂}_n-MOF, and confirm its ferroelectricity down to 7 nm thickness. A large polarization of ≈14.2 µC cm⁻², small coercive field of ≈33.3 V µm⁻¹, and excellent endurability >10⁶ cycles are found in 2D {Cu^IIL₂}_n-MOF nanosheets. This enables to fabricate FeFETs using 2D {Cu^IIL₂}_n-MOF as the gate and MoS₂ as the channel, achieving an on/off ratio of 10⁷ with ultralow off-state current of 100 fA and tunable memory window, making it exceptional among known FeFETs and very promising for next-generation ultralow power memories and computing devices

Light: Science & Applications, Published online: 01 January 2025; doi:10.1038/s41377-024-01662-4

Linear and nonlinear record high optical birefringence in anisotropic van der Waals crystals

Publication date: January–February 2025

Source: Materials Today, Volume 82

Author(s): Tasmia Azam, Muhammad Shoaib Khalid, Zhong-Shuai Wu

Here, the adhesion strength of CVD-grown bilayer WS₂ is directly measured using the nano scratch technique on three different substrates - Sapphire, SiO₂/Si, and fused quartz. The critical delamination load is lowest for the Sapphire substrate (10 µN) (due to oxide layer) and highest for the SiO₂/Si substrate (29 µN). MD simulation results also agree with experimental observations.

Abstract

The interfacial adhesion between transition metal dichalcogenides (TMDs) and the growth substrate significantly influences the employment of flakes in various applications. Most previous studies have focused on MoS₂ and graphene, particularly their interaction with SiO₂/Si substrates. In this work, the adhesion strength of CVD-grown bilayer WS₂ is directly measured using the nano scratch technique on three different substrates—Sapphire, SiO₂/Si, and fused quartz. The scratch test is performed using a Berkovich tip of ≈100 nm radius, mounted to a 2D transducer, capable of measuring normal and lateral forces simultaneously. The critical load is calculated from the Atomic Force Microscopy (AFM) images. The critical load for delamination is lowest for the Sapphire substrate (10 µN) and highest for the SiO₂/Si substrate (29 µN). MD simulation has also been performed, and the results agree with experimental observations. The pull-off force, an essential indicator for the easy removal and transfer of 2D materials, shows the least pull-off force of 2.56 nN for WS₂ on sapphire and the highest, 2.83 nN, for WS₂ on SiO₂/Si.

Nature Communications, Published online: 30 December 2024; doi:10.1038/s41467-024-54936-1

While the list of van der Waals magnetic materials has expanded considerably over the last few years, these are still typically limited to low temperatures. Here, Wu et al report wafer scale growth, and robust room temperature ferromagnetism in Fe3GaTe2.

Analytical equations for photo and dark current of Schottky contact MoS₂ phototransistors are established by fitting to experimental data. It shows that the ultrahigh gain are created by light-induced modulation of Schottky potential barrier.

Abstract

High-gain photodetectors based on 2D semiconductors have been extensively investigated in the past decades. However, the underlying mechanism remains in dispute without a proper analytical theory. On one side, the classical photogain theory is not applicable, as it was derived on two misplaced assumptions. On the other side, unexpected potential barriers usually present in 2D semi-conductors but their effect on the ultrahigh gain has been largely ignored. In this work, we first established a universal I-V equation for Schottky-contact MoS₂ phototransistors, modeled with two anti-symmetric Schottky diodes and a channel resistor in series. It has been proved to be valid under varying conditions of gate voltage, temperature, light illumination and bias voltage. Moreover, we established analytical equations for photocurrent and gain, which clearly shows that ultrahigh gain is created by light-induced modulation of potential barrier in exponential form. Finally, the theory was validated on 40 samples by verifying the I–V characteristics and minority carrier lifetime. Our results not only shed light on the working mechanism of 2D phototransistors, but also present important advance for device modeling and design in 2D integrated circuits.

In bilayer, WS₂, the environmental gas molecules remained in the van der Waals gap cause the degradation of sliding ferroelectricity. Oxygen passivation of sulfur vacancies not only damages the polarization, but also weakens the interlayer coupling, and reduces the sliding barriers. For large-scale commercial applications, it is necessary to add a protective encapsulation.

Abstract

Emerging sliding ferroelectricity (SF) holds great potential for the development of low-energy-cost and high-endurance ferroelectric devices. In the van der Waals (vdWs) stacking of SF, atomic vacancies inevitably exist and gas molecules commonly stay in the interlayer, but their impact on SF is unclear. In this work, the bilayer WS₂ is taken as an example and demonstrate their effect on the SF polarization and switching barrier. The sulfur vacancy (SV) is found to slightly impair polarization, but the W atoms around the SV tend to chemically adsorb O₂ molecules in the vdWs gap, which can possibly further dissociate into separately chemisorbed O atoms at room temperature. The adsorbed oxygen causes the reduction of polarization and switching barrier, eventually inducing the degradation of SF properties. In addition, the adsorbed oxygen also modifies the Schottky barriers in SF-based transistors and narrows the memory window, leading to the degradation of the devices. These effects may accumulate over time and eventually result in degraded device performance. This work provides a microscopic insight into the effect of defects/impurities on SF, favoring optimizing the performance of SF-based devices.

The dominant photoresponse waveband of the self-powered photodetector based on WSe₂ lateral PN homojunction is tuned from 550  to 800 nm when 1.04% uniaxial tensile strain is applied. That meant users can selectively use the information in specific wavebands to identify the characteristics of object to enhance the anti-interference ability. Such strain-tunable property of the photodetector exhibited promising prospect for the application in artificial adaption vision.

Abstract

Flexible devices based on 2D materials have shown promising application capacity in next-generation optoelectronics. The lack of inversion centrosymmetry renders odd-layered 2D transition metal dichalcogenides (TMDs) to be piezoelectric, which means the properties modulation of them gets rid of the limit to the gate voltage and they can be directly gated by external strain. Here, a self-powered photodetector based on WSe₂ lateral PN homojunction is constructed, which exhibits excellent current rectification behavior with a rectification ratio of 1.8 × 10³. Further, under the modulation of uniaxial tensile strain, a novel phenomenon that the dominant response waveband can be tuned from 550  to 800 nm by 1.04% tensile strain is observed. The maximum photoresponsivity to 800 nm incident laser reach 216.7 mA W⁻¹ with 455% improvement has been demonstrated when a 1.04% tensile strain is applied. This work provides an example of multi-band response light detection with strain manipulation on a single photodetector device, which shows significant prospect in adaptable artificial vision application.

The work emphasizes the interfacial engineering of a gold-monolayer MoS₂ junction with another monolayer of vanadium degenerately doped MoS₂, exhibiting an enormous enhancement in the charge transfer properties with low Schottky barrier height for electrons.

Abstract

2D transition-metal dichalcogenide semiconductors such as MoS₂ are identified as a platform for next-generation electronic circuitries. However, the progress toward industrial applications is still lagging due to imperfections of wafer-scale deposition techniques and in-contact parasitic impedance affecting device integration in large circuits and systems. Here, on contact engineering of large-scale, chemical vapor deposition (CVD) grown monolayer MoS₂ films is reported, leading to improved performance of field effect transistors. The transistor performance of monolayer pure MoS₂ is initially characterized by its I _ON/I _OFF ratio (10⁶), carrier density (≈10¹² cm⁻²), and mobility (≈10 cm² Vs⁻¹), and the Schottky barrier height (SBH) of conventional metallic Au contact of MoS₂ (≈215 meV). Then, a CVD-grown degenerately-doped monolayer of alloy V_0.25Mo_0.75S₂ is introduced between Au and MoS₂ of a modified transistor, reducing the SBH to ≈100 meV. The reduced contact resistance (≈50%) of the device with an atomically thin contact interface complies with the theoretical model and is free from Fermi-level pinning effects. It is resilient to the high temperatures that are characteristic of physical metallization methods and is readily scalable.

The nonlinear response of spiral 2D transition-metal dichalcogenides can be tailored on-demand through novel structural designs (such as aligned- and twisted-triangular spiral nanosheets) with scalable and reproducible method, which is beneficial to the integrated photonics and lab-on-a-chip quantum devices.

Abstract

Spiral transition-metal dichalcogenides with broken crystal inversion symmetry and significant second-order nonlinear responses have shown great promise for further nonlinear optical applications. However, various spiral structures will be formed during their synthesis process, their second harmonic generation (SHG) varying with the layer thickness and which of them manifesting the most promising SHG response are still unresolved. Here, the layer-dependent SHG response is investigated for four representative spiral WS₂ with different screw and twist angles, including aligned- and twisted-triangular spiral structures, aligned- and twisted-hexagonal spiral structures, respectively. Experimental results demonstrate that both aligned- and twisted-hexagonal spiral WS₂ present weak SHG response. In contrast, the SHG signal of the aligned-triangular spiral WS₂ almost quadratically increases with the lift of their thickness, which is two orders of magnitude stronger than hexagonal structures. Moreover, an oscillating layer-dependence SHG response for twisted-triangular spiral WS₂ has been attributed to the restored inversion symmetry. The underlying mechanism has been explored by the evolution of their crystal symmetry. The results not only disclose that the nonlinear response of the spiral WS₂ can be tailored on-demand through the novel structural designs, but also pave the way to scalable integrated photonics and lab-on-a-chip quantum devices based on spiral layered materials.

Bi₂SeO₂ is a promising n-type semiconductor to pair with p-type BiCuSeO in a thermoelectric (TE) device. This study explores the structure-property relationships in Bi₂SeO₂ by linking synthesis conditions, native defect formation, and transport properties. Combining first-principles calculations and solid-state synthesis, this study demonstrates how selenium vacancy formation and grain boundary scattering can be systematically controlled to improve the TE performance of Bi₂SeO₂.

Abstract

Bi₂SeO₂ is a promising n-type semiconductor to pair with p-type BiCuSeO in a thermoelectric (TE) device. The TE figure of merit zT and, therefore, the device efficiency must be optimized by tuning the carrier concentration. However, electron concentrations in self-doped n-type Bi₂SeO₂ span several orders of magnitude, even in samples with the same nominal compositions. Such unsystematic variations in the electron concentration have a thermodynamic origin related to the variations in native defect concentrations. In this study, first-principles calculations are used to show that the selenium vacancy, which is the source of n-type conductivity in Bi₂SeO₂, varies by 1–2 orders of magnitude depending on the thermodynamic conditions. It is predicted that the electron concentration can be enhanced by synthesizing under more Se-poor conditions and/or at higher solid-state reaction temperatures (T _SSR), which promote the formation of selenium vacancies without introducing extrinsic dopants. The computational predictions are validated through solid-state synthesis of Bi₂SeO₂. More than two orders of magnitude increase are observed in the electron concentration simply by adjusting the synthesis conditions. Additionally, a significant effect of grain boundary scattering on the electron mobility in Bi₂SeO₂ is revealed, which can also be controlled by adjusting T_SSR. By simultaneously optimizing the electron concentration and mobility, a zT of ≈0.2 is achieved at 773 K for self-doped n-type Bi₂SeO₂. The study highlights the need for careful control of thermodynamic growth conditions and demonstrates TE performance improvement by varying synthesis parameters according to thermodynamic guidelines.

Within this Perspective, the main approaches used to prepare highly efficient MoS₂-based catalysts in relevant organic transformations are summarized and critically discussed, namely: 1) increment of the specific surface area, 2) generation of the metallic 1T phase, 3) introduction of vacancies, 4) preparation of nanostructured hybrids/composites, 5) doping with transition metal ions, and 6) partial oxidation of MoS₂.

Abstract

In the field of heterogeneous organic catalysis, molybdenum disulfide (MoS₂) is gaining increasing attention as a catalytically active material due to its low toxicity, earth abundance, and affordability. Interestingly, the catalytic properties of this metal-based material can be improved by several strategies. In this Perspective, through the analysis of some explicative examples, the main approaches used to prepare highly efficient MoS₂-based catalysts in relevant organic reactions are summarized and critically discussed, namely: i) increment of the specific surface area, ii) generation of the metallic 1T phase, iii) introduction of vacancies, iv) preparation of nanostructured hybrids/composites, v) doping with transition metal ions, and vi) partial oxidation of MoS₂. Finally, emerging trends in MoS₂-based materials catalysis leading to a richer organic synthesis are presented.

The article discusses the use of quantum biomaterials-enhanced microrobots for rapid detection of Salmonella enterica endotoxins in food. These microrobots function as mobile sensors using fluorescence-based technology for high selectivity and sensitivity. This method offers faster, more efficient, and cost-effective detection compared to traditional techniques, making it valuable for improving food safety and preventing contamination.

Abstract

Timely disruptive tools for the detection of pathogens in foods are needed to face global health and economic challenges. Herein, the utilization of quantum biomaterials-enhanced microrobots (QBEMRs) as autonomous mobile sensors designed for the precise detection of endotoxins originating from Salmonella enterica (S. enterica) as an indicator species for food-borne contamination globally is presented. A fluorescent molecule-labeled affinity peptide functions as a specific probe, is quenched upon binding to the surface of QBEMRs. Owing to its selective affinity for endotoxin, in the presence of S. enterica the fluorescence is restored and easy to observe and quantifies optical color change to indicate the presence of Salmonella. The devised approach is designed to achieve highly sensitive detection of the S. enterica serovar Typhimurium endotoxin with exquisite selectivity through the utilization of QBEMRs. Notably, no fluorescence signal is observed in the presence of endotoxins bearing similar structural characteristics, highlighting the selectivity of the approach during food sample analysis. Technically, the strategy is implemented in microplate readers to extend microrobots-based approaches to the routine laboratory. This new platform can provide fast and anticipated results in food safety.

Ultra-high color purity and efficient forward-emitting red quantum dot light-emitting diodes (QLEDs) with an emission linewidth of 11 nm and an a external quantum efficiency (EQE) of 35.6% are achieved by integrating distributed Bragg reflector into normal electroluminescent (EL) devices to form a microcavity. This study fills the gap of EL linewidth near 10 nm for red QLEDs with EQE exceeding 20% and significantly promotes the commercialization for ultra-high-definition display applications.

Abstract

A wide-color-gamut display enableby a narrow emission linewidth facilitates a visually immersive experience akin to the real world. Quantum dot light-emitting diodes (QLEDs) with excellent color purity and high efficiency hold great promise as future candidates for high-definition displays. However, most devices typically exhibit emission linewidths exceeding 20 nm, and lack a universal strategy for further enhancing the color purity. In this study, a planar microcavity structure for realizing ultra-narrow emissions is developed by incorporating a distributed Bragg reflector into normal electroluminescent devices. By leveraging the strong optical resonance effect derived from this microcavity structure, red QLEDs are successfully fabricated with an extraordinary full width at half maximum of 11 nm in the normal direction, beyond the BT.2020 color coordinates. The fabricated red-microcavity QLEDs exhibit a considerable enhancement in the external quantum efficiency, which increases from 28.2% to 35.6%, together with an extended operating lifetime. The strategy adopted herein will serve as an effective reference for achieving ultra-narrow emission and high-efficiency QLEDs.

Hydrogels with microstructured surface are fabricated via dehydration of double network hydrogels utilizing the distinct swelling behaviors between the first network hydrogel and the second network hydrogel in an acid solution. This method can generate uniform convex and concave microstructures with different topographies and profiles, which subsequently can serve as micromolds for soft lithography and open microfluidic platforms.

Abstract

Microstructured hydrogels show promising applications in various engineering fields from micromolds to anisotropic wetting surfaces and microfluidics. Although methods like molding by, e.g., casting as well as 3D printing are developed to fabricate microstructured hydrogels, developing fabrication methods with high controllability and low-cost is an on-going challenge. Here, a method is presented for creating microstructures through the dehydration of double network hydrogels. This method utilizes common acrylate monomers and a mask-assisted photopolymerization process, requiring no complex equipment or laborious chemical synthesis process. The shape and profile of microstructures can be easily controlled by varying the exposure time and the mask used during photopolymerization. By altering the monomer and the mask used for fabricating the second network hydrogel, both convex and concave microstructures can be produced. To showcase the utility of this method, the patterned hydrogel is utilized as a mold to fabricate a polydimethylsiloxane microlens array via soft lithography for imaging application. In addition, a patterned hydrogel surface exhibiting obvious anisotropic wetting properties and open microfluidic devices which can achieve fast directional superspreading within milliseconds are also fabricated to demonstrate the versatility of the method for different engineering fields.

It is demonstrated that thermal activation induces irreversible disordering in the interlayer stacking of γ-GeSe, even leading to a fully randomized configuration. The low sliding energy barrier and nearly stacking-independent energy landscape facilitate this change. These findings highlight the need to consider the susceptibility of interlayer stacking to disorder in various layered crystals.

Abstract

The interlayer stacking shift in van der Waals (vdW) crystals represents an important degree of freedom to control various material properties, including magnetism, ferroelectricity, and electrical properties. On the other hand, the structural phase transitions driven by interlayer sliding in vdW crystals often exhibit thickness-dependent, sample-specific behaviors with significant hysteresis, complicating a clear understanding of their intrinsic nature. Here, the stacking configuration of the recently identified vdW crystal, γ-GeSe, is investigated, and the disordering manipulation of stacking sequence is demonstrated. It is observed that the well-ordered AB′ stacking configuration in as-synthesized samples undergoes irreversible disordering upon Joule heating via electrical biasing or thermal treatment, as confirmed by atomic resolution scanning transmission electron microscopy (STEM). Statistical analysis of STEM data reveal the emergence of stacking disorder, with samples subjected to high electrical bias reaching the maximum levels of disorder. The energies of various stacking configurations and energy barriers for interlayer sliding are examined using first-principles calculation and a parameterized model to elucidate the key structural parameters related to stacking shift. The susceptibility of interlayer stacking to disorder through electrical or thermal treatments should be carefully considered to fully comprehend the structural and electrical properties of vdW crystals.

The investigation into the enhancing mechanisms of black phosphorus-based heterogeneous interface engineering will be approached from two fundamental points: the atomic and electronic interface. By adjusting the contact area and establishing diverse charge transfer mechanisms, the separation and transfer of photogenerated electron–hole pairs are promoted, which provide a novel strategy for devising highly efficient BP-based photocatalysts.

Abstract

Photocatalysis has garnered significant attention as a sustainable approach for energy conversion and environmental management. 2D black phosphorus (BP) has emerged as a highly promising semiconductor photocatalyst owing to its distinctive properties. However, inherent issues such as rapid recombination of photogenerated electrons and holes severely impede the photocatalytic efficacy of single BP. The construction/stacking mode of BP with other nanomaterials decreases the recombination rate of carriers and extend its functionalities. Herein, from the perspective of atomic interface and electronic interface, the enhancement mechanism of photocatalytic performance by heterogeneous interface engineering is discussed. Based on the intrinsic properties of BP and corresponding photocatalytic principles, the effects of diverse interface characteristics (point, linear, and planar interface) and charge transfer mechanisms (type I, type II, Z-scheme, and S-scheme heterojunctions) on photocatalysis are summarized systematically. The modulation of heterogeneous interfaces and rational regulation of charge transfer mechanisms can enhance charge migration between interfaces and even maximize redox capability. Furthermore, research progress of heterogeneous interface engineering based on BP is summarized and their prospects are looked ahead. It is anticipated that a novel concept would be presented for constructing superior BP-based photocatalysts and designing other 2D photocatalytic materials.