JIALINGBO

3,4‐Dicyanothiophene is a versatile and promising building block for constructing high‐performance, low‐cost, conjugated polymers for application in polymer solar cells. This unit possesses structural simplicity and synthetic accessibility, and endows the resulting polymers with appropriate aggregation properties and crystallinity, large dipole moment, deep‐lying energy levels, optimal bulk‐heterojunction morphology, and low energy loss and high efficiency in solar cells.

Abstract

In this contribution, a versatile building block, 3,4‐dicyanothiophene (DCT), which possesses structural simplicity and synthetic accessibility for constructing high‐performance, low‐cost, wide‐bandgap conjugated polymers for use as donors in polymer solar cells (PSCs), is reported. A prototype polymer, PB3TCN‐C66, and its cyano‐free analogue polymer PB3T‐C66, are synthesized to evaluate the potential of using DCT in nonfullerene PSCs. A stronger aggregation property in solution, higher thermal transition temperatures with higher enthalpies, a larger dipole moment, higher relative dielectric constant, and more linear conformation are exhibited by PB3TCN‐C66. Solar cells employing IT‐4F as the electron acceptor offer power conversion efficiencies (PCEs) of 11.2% and 2.3% for PB3TCN‐C66 and PB3T‐C66, respectively. Morphological characterizations reveal that the PB3TCN‐C66:IT‐4F blend exhibits better π–π paracrystallinity, a contracted domain size, and higher phase purity, consistent with its higher molecular interaction parameter, derived from thermodynamic calculations. Moreover, PB3TCN‐C66 offers a higher open‐circuit voltage and reduced energy loss than most state‐of‐the‐art wide‐bandgap polymers, without the need of additional electron‐withdrawing substituents. Two additional polymers derived from DCT also demonstrate promising performance with a higher PCE of 13.4% being achieved. Thus, DCT represents a versatile and promising building block for constructing high‐performance, low‐cost, conjugated polymers for application in PSCs.

Mixed lead halide perovskites often suffer from phase segregation. This phenomenon correlates to the cation diffusion kinetics at the gel stage. Now, a homogenous 2D perovskite thin film was successfully fabricated without significant phase segregation. This understanding should guide the design and processing of halide perovskites to meet the requirements for optoelectronic applications.

Abstract

Lead halide perovskites with mixed cations/anions often suffer from phase segregation, which is detrimental to device efficiency and their long‐term stability. During perovskite film growth, the gel stage (in between liquid and crystalline) correlates to phase segregation, which has been rarely explored. Herein, cation diffusion kinetics are systematically investigated at the gel stage to develop a diffusion model obeying Fick's second law. Taking 2D layered perovskite as an example, theoretical and experimental results reveal the impact of diffusion coefficient, temperature, and gel duration on the film growth and phase formation. A homogenous 2D perovskite thin film was then fabricated without significant phase segregation. This in‐depth understanding of gel stage and relevant cation diffusion kinetics would further guide the design and processing of halide perovskites with mixed composition to meet requirements for optoelectronic applications.

Herein, calcium chloride is applied to passivate and dope inorganic CsPbI₂Br. It enhances the crystallinity of CsPbI₂Br to decrease trap density and prolong carrier lifetime and to raise its Fermi level to lie very close to the conduction band, leading to a high voltage of 1.32 V, and a record efficiency of 16.79% for CsPbI₂Br cells.

Abstract

Cesium‐based inorganic perovskites, such as CsPbI₂Br, are promising candidates for photovoltaic applications owing to their exceptional optoelectronic properties and outstanding thermal stability. However, the power conversion efficiency of CsPbI₂Br perovskite solar cells (PSCs) is still lower than those of hybrid PSCs and inorganic CsPbI₃ PSCs. In this work, passivation and n‐type doping by adding CaCl₂ to CsPbI₂Br is demonstrated. The crystallinity of the CsPbI₂Br perovskite film is enhanced, and the trap density is suppressed after adding CaCl₂. In addition, the Fermi level of the CsPbI₂Br is changed by the added CaCl₂ to show heavy n‐type doping. As a result, the optimized CsPbI₂Br PSC shows a highest open circuit voltage of 1.32 V and a record efficiency of 16.79%. Meanwhile, high air stability is demonstrated for a CsPbI₂Br PSC with 90% of the initial efficiency remaining after more than 1000 h aging in air.

Superoxide formation in mesoporous carbon perovskite solar cells is dependent upon a combination of competitive factors including defect concentrations, charge carrier extraction, oxygen diffusion, and grain morphology. The addition of 5‐aminovaleric acid iodide to the methylammonium lead iodide perovskite allows the formation of smaller grains, thus hindering oxygen diffusion in the film, reducing superoxide formation.

Abstract

Perovskite solar cells have attracted a great deal of attention thanks to their high efficiency, ease of manufacturing, and potential low cost. However, the stability of these devices is considered their main drawback and needs to be addressed. Mesoporous carbon perovskite solar cells (m‐CPSC), consisting of three mesoporous layers (TiO₂/ZrO₂/C) infiltrated with CH₃NH₃PbI₃ (MAPI) perovskite, have presented excellent lifetimes of more than 10 000 h when the additive NH₂(CH₂)₄CO₂HI (5‐ aminovaleric acid iodide; 5‐AVAI) is used to modify the perovskite structure. Yet, the role of 5‐AVAI in enhancing the stability has yet to be determined. Here, superoxide‐mediated degradation of MAPI m‐CPSC with and without the 5‐AVAI additive is studied using the fluorescence probe dihydroethidium for superoxide detection. In situ X‐ray diffractometry shows that aminovaleric acid methylammonium lead iodide (AVA‐MAPI) perovskite infiltrated in mesoporous layers presents higher stability in an ambient environment under illumination, evidenced by a slower decrease of the MAPI/PbI₂ peak ratio. Superoxide yield measurements demonstrate that AVA‐MAPI generates more superoxide than regular MAPI when deposited on glass but generates significantly less when infiltrated in mesoporous layers. It is believed that superoxide formation in m‐CPSC is dependent on a combination of competitive factors including oxygen diffusion, sample morphology, grain size, and defect concentration.

The thiazolium iodide‐passivated perovskite layer reduces CH₃NH₃ ⁺ thermal diffusion and shallow as well as deep traps, which in turn yield improved performance.

Abstract

Interface engineering has become one of the most facile and effective approaches to improve solar cells performance and its long‐term stability and to retard unwanted side reactions. Three passivating agents are developed which can functionalize the surface and induce hydrophobicity, by employing substituted thiazolium iodide (TMI) for perovskite solar cells fabrication. The role of TMI interfacial layers in microstructure and electro‐optical properties is assessed for structural as well as transient absorption measurements. TMI treatment resulted in V _OC and fill factor enhancement by reducing possible recombination paths at the perovskite/hole selective interface and by reducing the shallow as well as deep traps. These in turn allow to achieve higher performance as compared to the pristine surface. Additionally, the TMI passivated perovskite layer considerably reduces CH₃NH₃ ⁺ thermal diffusion and degradation induced by humidity. The un‐encapsulated perovskite solar cells employing TMI exhibit a remarkable stability under moisture levels (≈50% RH), retaining ≈95% of the initial photon current efficiency after 800 h of fabrication, paving the way towards a potential scalable endeavor.

Stable perovskite thin films and solar cells are obtained by judicious incorporation of multifunctional tetrapropylammonium (TPA) cations in methylammonium iodide (MAPbI₃). Upon addition of TPA, a heterostructure is formed, which leads to the passivation of defects along with improved morphology. This study highlights a new strategy to enhance the stability of perovskite solar cells while maintaining high performance.

Abstract

Improving the performances of photovoltaic (PV) devices by suppressing nonradiative energy losses through surface defect passivation and enhancing the stability to the level of standard PV represents one critical challenge for perovskite solar cells. Here, reported are the advantages of introducing a tetrapropylammonium (TPA⁺) cation that combines two key functionalities, namely surface passivation of CH₃NH₃PbI₃ nanocrystals through strong ionic interaction with the surface and bulk passivation via formation of a type I heterostructure that acts as a recombination barrier. As a result, nonencapsulated perovskite devices with only 2 mol% of TPA⁺ achieve power conversion efficiencies over 18.5% with higher V _OC under air mass 1.5G conditions. The devices fabricated retain more than 85% of their initial performances for over 1500 h under ambient conditions (55% RH ± 5%). Furthermore, devices with TPA⁺ also exhibit excellent operational stability by retaining over 85% of the initial performance after 250 h at maximum power point under 1 sun illumination. The effect of incorporation of TPA⁺ on the structural and optoelectronic properties is studied by X‐ray diffraction, ultraviolet–visible absorption spectroscopy, ultraviolet photon–electron spectroscopy, time‐resolved photoluminescence, and scanning electron microscopy imaging. Atomic‐level passivation upon addition of TPA⁺ is elucidated employing 2D solid‐state NMR spectroscopy.

A simple low‐temperature‐processed In₂O₃/SnO₂ bilayer electron‐transport layer (ETL) is used for fabricating efficient perovskite solar cells (PSCs). The bilayer ETL with appropriate energy alignment is beneficial for charge transfer, thus minimizing open‐circuit voltage (V _OC) loss. An optimized planar PSC with a power conversion efficiency (PCE) of 23.24% is obtained. In contrast, devices based on single SnO₂ only achieve efficiency of 21.42%.

Abstract

An electron‐transport layer (ETL) with appropriate energy alignment and enhanced charge transfer is critical for perovskite solar cells (PSCs). However, interfacial energy level mismatch limits the electrical performance of PSCs, particularly the open‐circuit voltage (V _OC). Herein, a simple low‐temperature‐processed In₂O₃/SnO₂ bilayer ETL is developed and used for fabricating a new PSC device. The presence of In₂O₃ results in uniform, compact, and low‐trap‐density perovskite films. Moreover, the conduction band of In₂O₃ is shallower than that of Sn‐doped In₂O₃ (ITO), enhancing the charge transfer from perovskite to ETL, thus minimizing V _OC loss at the perovskite and ETL interface. A planar PSC with a power conversion efficiency of 23.24% (certified efficiency of 22.54%) is obtained. A high V _OC of 1.17 V is achieved with the potential loss at only 0.36 V. In contrast, devices based on single SnO₂ layers achieve 21.42% efficiency with a V _OC of 1.13 V. In addition, the new device maintains 97.5% initial efficiency after 80 d in N₂ without encapsulation and retains 91% of its initial efficiency after 180 h under 1 sun continuous illumination. The results demonstrate and pave the way for the development of efficient photovoltaic devices.

A conjugated polyelectrolyte is used for simultaneously tailoring the perovskite adjacent interfaces. Herein, for the first time, poly[(9,9‐bis(3′‐((N,N ‐dimethyl)‐N ‐ethyl‐ammonium)‐propyl)‐2,7‐fluorene)‐alt‐2,7‐(9,9‐dioctylfluorene)]di‐iodide (PFN‐I)is exploited in inverted planar perovskite solar cells. At the hole transport layer/perovskite interface, the PFN‐I is beneficial for solving the dewetting issue. At the perovskite/electron transport layer interface, the PFN‐I is advantageous for passivating defects.

Interface engineering is an effective means to enhance the performance of thin‐film devices, such as perovskite solar cells (PSCs). Herein, a conjugated polyelectrolyte, poly[(9,9‐bis(3′‐((N,N ‐dimethyl)‐N ‐ethyl‐ammonium)‐propyl)‐2,7‐fluorene)‐alt‐2,7‐(9,9‐dioctylfluorene)]di‐iodide (PFN‐I), is used at the interfaces between the hole transport layer (HTL)/perovskite and perovskite/electron transport layer simultaneously, to enhance the device power conversion efficiency (PCE) and stability. The fabricated PSCs with an inverted planar heterojunction structure show improved open‐circuit voltage (V _oc), short‐circuit current density (J _sc), and fill factor, resulting in PCEs up to 20.56%. The devices maintain over 80% of their initial PCEs after 800 h of exposure to a relative humidity 35–55% at room temperature. All of these improvements are attributed to the functional PFN‐I layers as they provide favorable interface contact and defect reduction.

A new passivator, 4‐tert‐butylbenzylammonium iodide (tBBAI), is introduced, which accelerates charge extraction while retarding nonradiative recombination, boosting the power conversion efficiency of perovskite solar cells (PSCs) from 20% to 23.5% and reducing the hysteresis to barely detectable levels. tBBAI‐passivated PSCs also show excellent stability, retaining over 95% of their initial PCE after 500 h full‐sun illumination under maximum‐power‐point tracking.

Abstract

Passivation of interfacial defects serves as an effective means to realize highly efficient and stable perovskite solar cells (PSCs). However, most molecular modulators currently used to mitigate such defects form poorly conductive aggregates at the perovskite interface with the charge collection layer, impeding the extraction of photogenerated charge carriers. Here, a judiciously engineered passivator, 4‐tert‐butyl‐benzylammonium iodide (tBBAI), is introduced, whose bulky tert‐butyl groups prevent the unwanted aggregation by steric repulsion. It is found that simple surface treatment with tBBAI significantly accelerates the charge extraction from the perovskite into the spiro‐OMeTAD hole‐transporter, while retarding the nonradiative charge carrier recombination. This boosts the power conversion efficiency (PCE) of the PSC from ≈20% to 23.5% reducing the hysteresis to barely detectable levels. Importantly, the tBBAI treatment raises the fill factor from 0.75 to the very high value of 0.82, which concurs with a decrease in the ideality factor from 1.72 to 1.34, confirming the suppression of radiation‐less carrier recombination. The tert‐butyl group also provides a hydrophobic umbrella protecting the perovskite film from attack by ambient moisture. As a result, the PSCs show excellent operational stability retaining over 95% of their initial PCE after 500 h full‐sun illumination under maximum‐power‐point tracking under continuous simulated solar irradiation.

An effective polar molecule of (2‐aminothiazole‐4‐yl)acetic acid (ATAA) is incorporated onto a ZnO electron transport layer to simultaneously achieve defect passivation and work function modulation by forming permanent interface dipoles. It minimizes the charge recombination loss in perovskite solar cells, and the ZnO–ATAA‐based device ultimately achieves an enhanced efficiency of 19.74% while suppressing the device hysteresis.

The intrinsic characteristics of a ZnO electron transport layer (ETL) lead to severe charge loss in perovskite solar cells (PSCs), such as photogenerated charge accumulation recombination in the perovskite layer due to the low electron extraction capacity, and defect‐induced charge recombination at the interface due to the unfavorable defects, causing efficiency loss and device hysteresis. Here, the polar molecule of (2‐aminothiazole‐4‐yl)acetic acid (ATAA) is self‐assembled onto a ZnO layer with the help of oxygen vacancy defects, combining the advantages of lowering the work function by forming the permanent interface dipole and simultaneously passivating defect states. It effectively strengthens the electron extraction capacity and reduces the density of defect states. Therefore, the resulting PSCs with a ZnO–ATAA ETL yield an enhanced efficiency of 19.74% with evidently reduced device hysteresis.

3,4‐Dicyanothiophene is a versatile and promising building block for constructing high‐performance, low‐cost, conjugated polymers for application in polymer solar cells. This unit possesses structural simplicity and synthetic accessibility, and endows the resulting polymers with appropriate aggregation properties and crystallinity, large dipole moment, deep‐lying energy levels, optimal bulk‐heterojunction morphology, and low energy loss and high efficiency in solar cells.

Abstract

In this contribution, a versatile building block, 3,4‐dicyanothiophene (DCT), which possesses structural simplicity and synthetic accessibility for constructing high‐performance, low‐cost, wide‐bandgap conjugated polymers for use as donors in polymer solar cells (PSCs), is reported. A prototype polymer, PB3TCN‐C66, and its cyano‐free analogue polymer PB3T‐C66, are synthesized to evaluate the potential of using DCT in nonfullerene PSCs. A stronger aggregation property in solution, higher thermal transition temperatures with higher enthalpies, a larger dipole moment, higher relative dielectric constant, and more linear conformation are exhibited by PB3TCN‐C66. Solar cells employing IT‐4F as the electron acceptor offer power conversion efficiencies (PCEs) of 11.2% and 2.3% for PB3TCN‐C66 and PB3T‐C66, respectively. Morphological characterizations reveal that the PB3TCN‐C66:IT‐4F blend exhibits better π–π paracrystallinity, a contracted domain size, and higher phase purity, consistent with its higher molecular interaction parameter, derived from thermodynamic calculations. Moreover, PB3TCN‐C66 offers a higher open‐circuit voltage and reduced energy loss than most state‐of‐the‐art wide‐bandgap polymers, without the need of additional electron‐withdrawing substituents. Two additional polymers derived from DCT also demonstrate promising performance with a higher PCE of 13.4% being achieved. Thus, DCT represents a versatile and promising building block for constructing high‐performance, low‐cost, conjugated polymers for application in PSCs.

A robust and fully functional solution‐processed interconnecting layer (ICL) is engineered to chemically and mechanically protect the underlying photoactive layer against interface protonation and penetration of the high boiling point solvent without further thermal treatment. Organic tandem solar cells with various photoactive layers exhibit high reliability and good reproducibility, demonstrating the superiority of the crosslinked ICL.

Abstract

The performance of tandem organic solar cells (OSCs) is directly related to the functionality and reliability of the interconnecting layer (ICL). However, it is a challenge to develop a fully functional ICL for reliable and reproducible fabrication of solution‐processed tandem OSCs with minimized optical and electrical losses, in particular for being compatible with various state‐of‐the‐art photoactive materials. Although various ICLs have been developed to realize tandem OSCs with impressively high performance, their reliability, reproducibility, and generic applicability are rarely analyzed and reported so far, which restricts the progress and widespread adoption of tandem OSCs. In this work, a robust and fully functional ICL is developed by incorporating a hydrolyzed silane crosslinker, (3‐glycidyloxypropyl)trimethoxysilane (GOPS), into poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS), and its functionality for reliable and reproducible fabrication of tandem OSCs based on various photoactive materials is validated. The cross‐linked ICL can successfully protect the bottom active layer against penetration of high boiling point solvents during device fabrication, which widely broadens the solvent selection for processing photoactive materials with high quality and reliability, providing a great opportunity to continuously develop the tandem OSCs towards future large‐scale production and commercialization.

The mechanism of interfacial Auger effect assisted sub‐bandgap electroluminescence is investigated based on the minority carriers injection characteristics at the Auger effect interface, by which the prerequisites and secondary conditions are proposed. Consequently, the interfacial Auger effect assisted perovskite light‐emitting diodes exhibit ultralow operational voltage, neglectable roll‐off, and improved operational stability.

Abstract

Perovskite‐based light‐emitting diodes (PeLEDs) have exhibited promising potential; however, their operational lifetimes are far from expectation. The large bias of the device during operation has been demonstrated as one of main reasons for accelerated device failure. To mitigate such a predicament, interfacial Auger effect (IAE) assisted sub‐bandgap voltage electroluminescence (EL) is a potential pathway to decrease the electric field intensity in each functional layer. However, the properties of a desirable IAE are still poorly understood. Herein, the underlying mechanism of IAE based on the injection characteristics of interfacial minority carriers at the Auger effect interface is investigated. Consequently, the prerequisites and the secondary conditions for the realization of IAE are proposed. Taking advantage of IAE assisted EL, the fabricated PeLEDs exhibit ultralow operational voltage, ignorable roll‐off, and improved operational stability. The findings in this work not only pave the way toward a feasible approach to enhance the stability of PeLEDs, but also highlight the potential of sub‐bandgap voltage EL in future display and lighting applications, especially in series circuits and tandem structures.

Stable and efficient mixed tin–lead (Sn–Pb) perovskite solar cells (PSCs) are demonstrated by defect passivation with ultrathin layered perovskites. The passivation layer provides defect passivation both at the film surface and the grain boundaries, without blocking the carrier transport. The devices exhibit a certified power conversion efficiency (PCE) of 18.95%, and a 200 h diurnal operating stability.

Abstract

The development of narrow‐bandgap (E _g ≈ 1.2 eV) mixed tin–lead (Sn–Pb) halide perovskites enables all‐perovskite tandem solar cells. Whereas pure‐lead halide perovskite solar cells (PSCs) have advanced simultaneously in efficiency and stability, achieving this crucial combination remains a challenge in Sn–Pb PSCs. Here, Sn–Pb perovskite grains are anchored with ultrathin layered perovskites to overcome the efficiency‐stability tradeoff. Defect passivation is achieved both on the perovskite film surface and at grain boundaries, an approach implemented by directly introducing phenethylammonium ligands in the antisolvent. This improves device operational stability and also avoids the excess formation of layered perovskites that would otherwise hinder charge transport. Sn–Pb PSCs with fill factors of 79% and a certified power conversion efficiency (PCE) of 18.95% are reported—among the highest for Sn–Pb PSCs. Using this approach, a 200‐fold enhancement in device operating lifetime is achieved relative to the nonpassivated Sn–Pb PSCs under full AM1.5G illumination, and a 200 h diurnal operating time without efficiency drop is achieved under filtered AM1.5G illumination.

Herein, calcium chloride is applied to passivate and dope inorganic CsPbI₂Br. It enhances the crystallinity of CsPbI₂Br to decrease trap density and prolong carrier lifetime and to raise its Fermi level to lie very close to the conduction band, leading to a high voltage of 1.32 V, and a record efficiency of 16.79% for CsPbI₂Br cells.

Abstract

Cesium‐based inorganic perovskites, such as CsPbI₂Br, are promising candidates for photovoltaic applications owing to their exceptional optoelectronic properties and outstanding thermal stability. However, the power conversion efficiency of CsPbI₂Br perovskite solar cells (PSCs) is still lower than those of hybrid PSCs and inorganic CsPbI₃ PSCs. In this work, passivation and n‐type doping by adding CaCl₂ to CsPbI₂Br is demonstrated. The crystallinity of the CsPbI₂Br perovskite film is enhanced, and the trap density is suppressed after adding CaCl₂. In addition, the Fermi level of the CsPbI₂Br is changed by the added CaCl₂ to show heavy n‐type doping. As a result, the optimized CsPbI₂Br PSC shows a highest open circuit voltage of 1.32 V and a record efficiency of 16.79%. Meanwhile, high air stability is demonstrated for a CsPbI₂Br PSC with 90% of the initial efficiency remaining after more than 1000 h aging in air.

Superoxide formation in mesoporous carbon perovskite solar cells is dependent upon a combination of competitive factors including defect concentrations, charge carrier extraction, oxygen diffusion, and grain morphology. The addition of 5‐aminovaleric acid iodide to the methylammonium lead iodide perovskite allows the formation of smaller grains, thus hindering oxygen diffusion in the film, reducing superoxide formation.

Abstract

Perovskite solar cells have attracted a great deal of attention thanks to their high efficiency, ease of manufacturing, and potential low cost. However, the stability of these devices is considered their main drawback and needs to be addressed. Mesoporous carbon perovskite solar cells (m‐CPSC), consisting of three mesoporous layers (TiO₂/ZrO₂/C) infiltrated with CH₃NH₃PbI₃ (MAPI) perovskite, have presented excellent lifetimes of more than 10 000 h when the additive NH₂(CH₂)₄CO₂HI (5‐ aminovaleric acid iodide; 5‐AVAI) is used to modify the perovskite structure. Yet, the role of 5‐AVAI in enhancing the stability has yet to be determined. Here, superoxide‐mediated degradation of MAPI m‐CPSC with and without the 5‐AVAI additive is studied using the fluorescence probe dihydroethidium for superoxide detection. In situ X‐ray diffractometry shows that aminovaleric acid methylammonium lead iodide (AVA‐MAPI) perovskite infiltrated in mesoporous layers presents higher stability in an ambient environment under illumination, evidenced by a slower decrease of the MAPI/PbI₂ peak ratio. Superoxide yield measurements demonstrate that AVA‐MAPI generates more superoxide than regular MAPI when deposited on glass but generates significantly less when infiltrated in mesoporous layers. It is believed that superoxide formation in m‐CPSC is dependent on a combination of competitive factors including oxygen diffusion, sample morphology, grain size, and defect concentration.