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10 May 09:21

Densified Metallic MoS2/Graphene Enabling Fast Potassium‐Ion Storage with Superior Gravimetric and Volumetric Capacities

by Kai Yao, Zhanwei Xu, Meng Ma, Jiayin Li, Fanyu Lu, Jianfeng Huang
Densified Metallic MoS2/Graphene Enabling Fast Potassium‐Ion Storage with Superior Gravimetric and Volumetric Capacities

A compact 1T‐MoS2/graphene is prepared using a capillary tension strategy and employed as the anode for potassium‐ion batteries. The 1T‐MoS2 with its high conductivity and wide layer spacing exhibits high electrochemical activity and fast kinetics for K+ storage. Based on this architectural construction, the superior gravimetric capacity (564 mAh g−1) and volumetric capacity (512 mAh cm−1) can be achieved simultaneously even after 100 cycles.


Abstract

The potassium‐ion battery (PIB) is an attractive energy storage device that possesses the potential advantages of high energy density and low cost. Herein, a pure 1T‐MoS2 is synthesized on graphene oxide and assembled into a hydrogel. The hydrogel is further tightened to a compact 1T‐MoS2/graphene (CTMG) bulk by a densifying strategy of capillary tension. When employed as an anode for PIBs, the CTMG electrode can store K+ through reversible intercalation and conversion electrochemistry, accompanied with fast kinetics since the 1T‐MoS2 induces a pseudocapacitive storage mechanism and the extraordinary K+ transportation ability. Consequently, the CTMG electrode delivers the high and reversible rate capacities of 511 and 327 mAh g‐1 at 0.1 and 1 A g‐1, respectively. Moreover, the compact architecture reduces the electrode thickness by ≈33% enabling a high volumetric capacity (512 mAh cm‐3 at 0.1 A g‐1 after 100 cycles), as well as holding a promising application in thick electrode.

10 May 09:20

Robust Superlubricity of Gold–Graphite Heterointerfaces

by Rotem Yaniv, Elad Koren
Robust Superlubricity of Gold–Graphite Heterointerfaces

Noncommensurate 2D heterointerfaces hold great promise toward low friction and nanoelectromechanical applications since they should in principle enable superlubricity for all rotational configuration. In this work, it is shown that the origin for a high force barrier is a result of commensurability between the moiré structure and the contact geometry. Consequently, new geometries that can potentially overcome such commensurability are presented.


Abstract

Noncommensurate 2D interfaces hold great promise toward low friction and nanoelectromechanical applications. For identical constituents, the crystals interlock at specific rotational configurations leading to high barriers for slide. In contrast, nonidentical constituents comprising different lattice parameters should enable robust superlubricity for all rotational configurations. This is however not the case for gold–graphite interfaces, as both theory and experiments show scaling behavior of the sliding force as a function of the interface contact area. By simulating the sliding force for gold–graphite interfaces, this work shows that the origin for high force barriers at special angular configurations is a result of commensurability between the moiré structure and the contact geometry. Consequently, this paper suggests new geometries that can potentially overcome such commensurability effects to enable robust superlubricity.

10 May 09:20

Tuning Contact Resistance in Top‐Contact p‐Type and n‐Type Organic Field Effect Transistors by Self‐Generated Interlayers

by Tanmoy Sarkar, Basel Shamieh, Roy Verbeek, Auke Jisk Kronemeijer, Gerwin H. Gelinck, Gitti L. Frey
Tuning Contact Resistance in Top‐Contact p‐Type and n‐Type Organic Field Effect Transistors by Self‐Generated Interlayers

A study of contact resistance tuning by self‐generated interlayer formation in organic field effect transistors is presented. The interlayer material is blended as an additive in the active layer and during metal deposition it migrates to the organic/metal interface. The generated interlayer of additive material modifies the device performance according to the tuning of the contact resistance.


Abstract

Contact resistance significantly limits the performance of organic field‐effect transistors (OFETs). Positioning interlayers at the metal/organic interface can tune the effective work‐function and reduce contact resistance. Myriad techniques offer interlayer processing onto the metal pads in bottom‐contact OFETs. However, most methods are not suitable for deposition on organic films and incompatible with top‐contact OFET architectures. Here, a simple and versatile methodology is demonstrated for interlayer processing in both p‐ and n‐type devices that is also suitable for top‐contact OFETs. In this approach, judiciously selected interlayer molecules are co‐deposited as additives in the semiconducting polymer active layer. During top contact deposition, the additive molecules migrate from within the bulk film to the organic/metal interface due to additive‐metal interactions. Migration continues until a thin continuous interlayer is completed. Formation of the interlayer is confirmed by X‐ray photoelectron spectroscopy (XPS) and cross‐section scanning transmission electron microscopy (STEM), and its effect on contact resistance by device measurements and transfer line method (TLM) analysis. It is shown that self‐generated interlayers that reduce contact resistance in p‐type devices, increase that of n‐type devices, and vice versa, confirming the role of additives as interlayer materials that modulate the effective work‐function of the organic/metal interface.

10 May 09:20

High‐TC Interfacial Ferromagnetism in SrMnO3/LaMnO3 Superlattices

by Marius Keunecke, Fryderyk Lyzwa, Danny Schwarzbach, Vladimir Roddatis, Nicolas Gauquelin, Knut Müller‐Caspary, Johann Verbeeck, Sara J. Callori, Frank Klose, Markus Jungbauer, Vasily Moshnyaga
High‐TC Interfacial Ferromagnetism in SrMnO3/LaMnO3 Superlattices

LaMnO3/SrMnO3 superlattices grown via a metalorganic aerosol deposition technique demonstrate a novel interfacial high‐temperature ferromagnetic phase, T C ≈360 K, due to electron transfer from the LaMnO3 into the SrMnO3 layer. The charge transfer scale, λTF ≈2 unit cells, is determined via in situ growth monitoring by ellipsometry and confirmed by polarized neutron reflectometry and high resolution electron microscopy/spectroscopy.


Abstract

Heterostructures of strongly correlated oxides demonstrate various intriguing and potentially useful interfacial phenomena. LaMnO3/SrMnO3 superlattices are presented showcasing a new high‐temperature ferromagnetic phase with Curie temperature, T C ≈360 K, caused by electron transfer from the surface of the LaMnO3 donor layer into the neighboring SrMnO3 acceptor layer. As a result, the SrMnO3 (top)/LaMnO3 (bottom) interface shows an enhancement of the magnetization as depth‐profiled by polarized neutron reflectometry. The length scale of charge transfer, λTF ≈2 unit cells, is obtained from in situ growth monitoring by optical ellipsometry, supported by optical simulations, and further confirmed by high resolution electron microscopy and spectroscopy. A model of the inhomogeneous distribution of electron density in LaMnO3/SrMnO3 layers along the growth direction is concluded to account for a complex interplay between ferromagnetic and antiferromagnetic layers in superlattices.

10 May 09:19

Modeling Diffusion in Functional Materials: From Density Functional Theory to Artificial Intelligence

by Yuval Elbaz, David Furman, Maytal Caspary Toroker
Modeling Diffusion in Functional Materials: From Density Functional Theory to Artificial Intelligence

Modeling diffusion processes is a significant aspect of developing functional materials, e.g. ion conductors for energy applications. Commonly, modeling diffusion is done by computational science methodologies such as density functional theory and molecular dynamics. Modern approaches are taking advantage of artificial intelligence methods to accelerate research and to find heuristic models.


Abstract

Diffusion describes the stochastic motion of particles and is often a key factor in determining the functionality of materials. Modeling diffusion of atoms can be very challenging for heterogeneous systems with high energy barriers. In this report, popular computational methodologies are covered to study diffusion mechanisms that are widely used in the community and both their strengths and weaknesses are presented. In static approaches, such as electronic structure theory, diffusion mechanisms are usually analyzed within the nudged elastic band (NEB) framework on the ground electronic surface usually obtained from a density functional theory (DFT) calculation. Another common approach to study diffusion mechanisms is based on molecular dynamics (MD) where the equations of motion are solved for every time step for all the atoms in the system. Unfortunately, both the static and dynamic approaches have inherent limitations that restrict the classes of diffusive systems that can be efficiently treated. Such limitations could be remedied by exploiting recent advances in artificial intelligence and machine learning techniques. Here, the most promising approaches in this emerging field for modeling diffusion are reported. It is believed that these knowledge‐intensive methods have a bright future ahead for the study of diffusion mechanisms in advanced functional materials.

03 May 05:25

Probing nanoscale fluctuation of ferromagnetic meta-atoms with a stochastic photonic spin Hall effect

by Bo Wang

Nature Nanotechnology, Published online: 27 April 2020; doi:10.1038/s41565-020-0670-0

Magneto-optical interaction of light with magnetic metasurfaces can give rise to the photonic spin Hall effect such that the light trajectory depends on the polarization of the light. For disordered systems, the probability distribution of the spin-dependent trajectories is a sensitive tool to detect random nanoscale variations in the metasurface.
03 May 05:25

Vorticity of viscous electronic flow in graphene

by Sven Danz and Boris N Narozhny
In ultra-pure materials electrons may exhibit a collective motion similar to the hydrodynamic flow of a viscous fluid, the phenomenon with far reaching consequences in a wide range of many body systems from black holes to high-temperature superconductivity. Yet the definitive detection of this intriguing behavior remains elusive. Until recently, experimental techniques for observing hydrodynamic behavior in solids were based on measuring macroscopic transport properties, such as the ‘nonlocal’ (or ‘vicinity’) resistance, which may allow alternative interpretation. Earlier this year two breakthrough experiments demonstrated two distinct imaging techniques making it possible to ‘observe’ the electronic flow directly. We demonstrate that a hydrodynamic flow in a long Hall bar (in the absence of magnetic field) exhibits a nontrivial vortex structure accompanied by a sign-alternating nonlocal resistance. An experimental observation of such unique flow pattern could serve a definitive...
03 May 05:25

Charge and energy transfer of quantum emitters in 2D heterostructures

by Zai-Quan Xu, Noah Mendelson, John A Scott, Chi Li, Irfan H Abidi, Hongwei Liu, Zhengtang Luo, Igor Aharonovich and Milos Toth
Graphene is often used as an acceptor in highly efficient energy transfer processes between its electrons and neighbouring optical emitters such as quantum dots, fluorescent molecules and color centres in crystals. Here we demonstrate that graphene can act not only as an acceptor in energy transfer processes, but also an acceptor of charge donated by photoexcited quantum emitters. Specifically, we use heterostructures comprised of graphene and hexagonal boron nitride (hBN) to demonstrate a reversible charge transfer process from quantum emitters in hBN to graphene. The process acts as a controllable, energy-resolved filter that quenches quantum emitters with ground states located above the Fermi level of graphene. Our findings shed light on the positions of hBN defect states within the bandgap of hBN, and are important for the design of devices based on 2D heterostructures, opening new avenues to technologies based on electrical excitation, manipulation, and readout of the quant...
03 May 05:24

Nitrogen‐Doped Ti3C2 MXene: Mechanism Investigation and Electrochemical Analysis

by Chengjie Lu, Li Yang, Bingzhen Yan, Liangbo Sun, Peigen Zhang, Wei Zhang, ZhengMing Sun
Nitrogen‐Doped Ti3C2 MXene: Mechanism Investigation and Electrochemical Analysis

The nitrogen doping mechanisms in Ti3C2 MXene are successfully revealed, using a combination of density functional theory simulations and experiment characterization. Three possible sites are found to accommodate the nitrogen dopants: lattice substitution, function substitution, and surface absorption, all favorable for improving the capacitance of Ti3C2 electrodes.


Abstract

Nitrogen doping has been proven to be a facile modification strategy to improve the electrochemical performance of 2D MXenes, a group of promising candidates for energy storage applications. However, the underlying mechanisms, especially the positions of nitrogen dopants, and its effect on the electrical properties of MXenes, are still largely unexplored. Herein, a comprehensive study is carried out to disclose the nitrogen doping mechanism in Ti3C2 MXene, by employing theoretical simulation and experimental characterization. Three possible sites are found in Ti3C2T x (T = F, OH, and O) to accommodate the nitrogen dopants: lattice substitution (for carbon), function substitution (for –OH), and surface absorption (on –O). Moreover, electrochemical test results confirm that all the three kinds of nitrogen dopants are favorable for improving the specific capacitance of the Ti3C2 electrode, and the underlying factors are successfully distinguished. By revealing the nitrogen doping mechanisms in Ti3C2 MXene, this work provides theoretical guidelines for modulating the electrochemical properties of MXene materials for energy storage applications.

03 May 05:23

Novel 2D Transition‐Metal Carbides: Ultrahigh Performance Electrocatalysts for Overall Water Splitting and Oxygen Reduction

by Yadong Yu, Jian Zhou, Zhimei Sun
Novel 2D Transition‐Metal Carbides: Ultrahigh Performance Electrocatalysts for Overall Water Splitting and Oxygen Reduction

The electrocatalytic performance of the emerging 2D MC2 structures is explored by performing an unbiased structural search and first‐principles calculations. A series of excellent catalysts are identified, where NbC2 is used for hydrogen evolution reaction (HER), TaC2 for bifunctional catalysis in HER/ oxygen reduction reaction (ORR), and MoC2 for multifunctional catalysis in HER/ oxygen evolution reaction (OER)/ORR. Additionally, the catalytic mechanisms for different reactions are investigated in depth.


Abstract

Searching for highly efficient, stable, and cost‐effective electrocatalysts for water splitting and oxygen reduction reaction (ORR) is critical for renewable energies, yet it remains a great challenge. Here, by performing an unbiased structural search and first‐principles calculations, the electrocatalytic performance of the emerging 2D transitional‐metal carbides, MC2 (M represents the transition metal of Ti, V, Nb, Ta, and Mo, C is carbon), is systematically investigated. Owing to their super stability and outstanding electronic conductivity, fast charge transfer kinetics is allowed during catalysis. Specifically, NbC2, TaC2, and MoC2 possess excellent hydrogen evolution reaction (HER) performance under the reaction by the Volmer‐Heyrovsky mechanism. Moreover, taking advantage of the dual‐active‐site catalytic mechanism for oxygen evolution reaction (OER) and ORR over traditional single‐active‐site mechanism, TaC2 presents promising bifunctional electrocatalytic activity with a low overpotential of 0.06 and 0.37 V for HER and ORR, respectively. Meanwhile, the low overpotential endows MoC2 remarkable multifunctional electrocatalytic performance in overall water splitting (0.001 V for HER, 0.45 V for OER) and ORR (0.47 V). These intriguing results demonstrate the robust applicability of MC2 monolayers as effective electrocatalysts.

03 May 05:22

Stoichiometry Control for the Tuning of Grain Passivation and Domain Distribution in Green Quasi‐2D Metal Halide Perovskite Films and Light‐Emitting Diodes

by Tai Cheng, Chuanjiang Qin, Satoru Watanabe, Toshinori Matsushima, Chihaya Adachi
Stoichiometry Control for the Tuning of Grain Passivation and Domain Distribution in Green Quasi‐2D Metal Halide Perovskite Films and Light‐Emitting Diodes

Quasi‐2D perovskites are engineered in terms of defect passivation and exciton confinement to reach high emitting efficiency. Compared with preparing the precursor solution with stoichiometric quasi‐2D compositions, simply adding a large organic halide salt into the 3D perovskite precursor ensures not only defect passivation but also effective formation of quasi‐2D perovskite domains, avoiding unfavorable appearance of low‐order domains.


Abstract

Quasi‐2D metal halide perovskite films are promising for efficient light‐emitting diodes (LEDs), because of their efficient radiative recombination and suppressed trap‐assisted quenching compared with pure 3D perovskites. However, because of the multidomain polycrystalline nature of solution‐processed quasi‐2D perovskite films, the composition engineering always impacts the emitting properties with complicated mechanisms. Here, defect passivation and domain distribution of quasi‐2D perovskite films prepared with various precursor compositions are systematically studied. As a result, in perovskite films prepared from stoichiometric quasi‐2D precursor compositions, large organic ammonium cations function well as passivators. In comparison, precursor compositions of simply adding large organic halide salt into a 3D perovskite precursor ensure not only the defect passivation but also the effective formation of quasi‐2D perovskite domains, avoiding unfavorable appearance of low‐order domains. Quasi‐2D perovskite films fabricated with a well‐designed precursor composition achieve a high photoluminescence quantum yield of 95.3% and an external quantum efficiency of 14.7% in LEDs.

03 May 05:21

Photoelectrochemical Synthesis of Ammonia with Black Phosphorus

by Danni Liu, Jiahong Wang, Shi Bian, Qian Liu, Yuanhong Gao, Xin Wang, Paul K. Chu, Xue‐Feng Yu
Photoelectrochemical Synthesis of Ammonia with Black Phosphorus

Black phosphorus (BP) is developed as a metal‐free 2D catalyst for the photoelectrochemical synthesis of ammonia at ambient conditions. The ammonia yield rate and Faradaic efficiency in acid electrolyte is determined as 102.4 µg h−1 mgcat. −1 and 23.3%, respectively. The excellent catalytic properties of BP are attributed to the synergistic effects of photoexcitation enhanced electrocatalysis and external bias promoted photocatalysis.


Abstract

Efficient production of ammonia using environmentally friendly techniques under ambient conditions is crucial to renewable energy storage and industrial applications, and catalysts with new reaction pathways are highly desirable. In this work, black phosphorus (BP) is used as a metal‐free 2D catalyst for the photoelectrochemical (PEC) nitrogen reduction reaction (NRR). The electrode is fabricated by layer‐by‐layer assembly of BP nanosheets on an indium tin oxide substrate. The PEC NRR activity in the N2 saturated aqueous electrolyte without a sacrificial agent is excellent, as exemplified by an ammonia yield rate of 102.4 µg h−1 mgcat.−1 and Faradaic efficiency of 23.3% at −0.4 V, which are the best among nonmetal catalysts for synthesis of ammonia by photocatalysis and electrocatalysis. Furthermore, the BP electrode shows excellent stability after 6 consecutive cycles. The excellent PEC catalytic properties are attributed to the light excitation enhanced electrocatalytic process and that the external bias promoted photocatalytic process improves ammonia production synergistically. The results not only demonstrate the great potential of BP in PEC catalysis, but also identify a promising technique to produce ammonia under ambient conditions using solar energy and electric energy.

03 May 05:21

Achieving Rich and Active Alkaline Hydrogen Evolution Heterostructures via Interface Engineering on 2D 1T‐MoS2 Quantum Sheets

by Wenshu Chen, Jiajun Gu, Yongping Du, Fang Song, Fanxing Bu, Jinghan Li, Yang Yuan, Ruichun Luo, Qinglei Liu, Di Zhang
Achieving Rich and Active Alkaline Hydrogen Evolution Heterostructures via Interface Engineering on 2D 1T‐MoS2 Quantum Sheets

Edge1T‐MoS2/edgeNi(OH)2 heterostructures are highly active toward alkaline hydrogen evolution reaction (HER). The prepared 1T–MoS2 quantum sheet/Ni(OH)2 catalyst with rich edge1T‐MoS2/edgeNi(OH)2 sites efficiently dissociates H2O to produce H2 in alkaline media in a bi‐functional manner, delivering excellent alkaline HER activity and stability surpassing that of Pt/C at high HER current densities (up to 500 mA cm−2).


Abstract

Large‐scale production of hydrogen from water‐alkali electrolyzers is impeded by the sluggish kinetics of hydrogen evolution reaction (HER) electrocatalysts. The hybridization of an acid‐active HER catalyst with a cocatalyst at the nanoscale helps boost HER kinetics in alkaline media. Here, it is demonstrated that 1T–MoS2 nanosheet edges (instead of basal planes) decorated by metal hydroxides form highly active edge1T‐MoS2/edgeNi(OH)2 heterostructures, which significantly enhance HER performance in alkaline media. Featured with rich edge1T‐MoS2/edgeNi(OH)2 sites, the fabricated 1T–MoS2 QS/Ni(OH)2 hybrid (quantum sized 1T–MoS2 sheets decorated with Ni(OH)2 via interface engineering) only requires overpotentials of 57 and 112 mV to drive HER current densities of 10 and 100 mA cm−2, respectively, and has a low Tafel slope of 30 mV dec−1 in 1 m KOH. So far, this is the best performance for MoS2‐based electrocatalysts and the 1T–MoS2 QS/Ni(OH)2 hybrid is among the best‐performing non‐Pt alkaline HER electrocatalysts known. The HER process is durable for 100 h at current densities up to 500 mA cm−2. This work not only provides an active, cost‐effective, and robust alkaline HER electrocatalyst, but also demonstrates a design strategy for preparing high‐performance catalysts based on edge‐rich 2D quantum sheets for other catalytic reactions.

03 May 05:20

Quasi-Fermi level splitting in nanoscale junctions from ab initio [Applied Physical Sciences]

by Juho Lee, Hyeonwoo Yeo, Yong-Hoon Kim
The splitting of quasi-Fermi levels (QFLs) represents a key concept utilized to describe finite-bias operations of semiconductor devices, but its atomic-scale characterization remains a significant challenge. Herein, the nonequilibrium QFL or electrochemical potential profiles within single-molecule junctions obtained from the first-principles multispace constrained-search density-functional formalism are presented. Benchmarking the standard...
26 Apr 03:17

Interfacial and Bulk Magnetic Properties of Stoichiometric Cerium Doped Terbium Iron Garnet Polycrystalline Thin Films

by Karthik Srinivasan, Cosmin Radu, Dario Bilardello, Peter Solheid, Bethanie J. H. Stadler
Interfacial and Bulk Magnetic Properties of Stoichiometric Cerium Doped Terbium Iron Garnet Polycrystalline Thin Films

High‐gyrotropy garnet on silicon is obtained despite the presence of a magnetic dead layer at the substrate thin‐film interface. A near‐ideal stoichiometry and compensation temperature in sputter‐deposited cerium‐doped terbium iron garnet (Ce:TbIG) suggests a lack of cation redistribution. A low room‐temperature magnetization, high coercivity, large remnant magnetization, and anisotropy‐ aided preferential in‐plane magnetization are beneficial for magnetless non‐reciprocal mode conversion optical isolators.


Abstract

One of the best magneto‐optical claddings for optical isolators in photonic integrated circuits is sputter deposited cerium‐doped terbium iron garnet (Ce:TbIG) which has a large Faraday rotation (≈−3500° cm−1 at 1550 nm). Near‐ideal stoichiometry Ce + TbFe = 0.57 of Ce0.5Tb2.5Fe4.75O12 is found to have a 44 nm magnetic dead layer that can impede the interaction of propagating modes with garnet claddings. The effective anisotropy of Ce:TbIG on Si is also important, but calculations using bulk thermal mismatch overestimate the effective anisotropy. Here, X‐ray diffraction measurements yield highly accurate measurements of strain that show anisotropy favors an in‐plane magnetization in agreement with the positive magnetostriction of Ce:TbIG. Upon doping TbIG with Ce, a slight decrease in compensation temperature occurs which points to preferential rare‐earth occupation in dodecahedral sites and an absence of cation redistribution between different lattice sites. The high Faraday rotation, large remanent ratio, large coercivity, and preferential in‐plane magnetization enable Ce:TbIG to be an in‐plane latched garnet, immune to stray fields with magnetization collinear to direction of light propagation.

26 Apr 03:16

Solution‐Processed Silicane Field‐Effect Transistor: Operation Due to Stacking Defects on the Channel

by Hideyuki Nakano, Kenji Ito, Atsushi Miura, Yutaka Majima
Solution‐Processed Silicane Field‐Effect Transistor: Operation Due to Stacking Defects on the Channel

The device processing and handling of air‐sensitive stacked silicanes as a conductive channel for FET fabrication are proposed. The transistor exhibits a room temperature current on/off ratio of ≈2 and a hole mobility of 1.8 cm2 V−1 s−1 and the gate bias modulation depends on the stacking defects on the channel with a thickness of 3 nm.


Abstract

2D silicon nanomaterials have unique potential for use in applications owing to their many different exotic electronic properties. Field‐effect transistors are fabricated based on free‐standing silicanes through a solution process. Owing to the sensitive surface and the nanometer thickness, the devices require the use of fabrication conditions similar to those of lithium‐ion batteries to prevent oxidation of the sheets. Reliable transistor performance is observed at room temperature in a channel thinner than 3 nm, as drain voltage dependent transfer curves current modulation, depending on the edge effect of the silicane, although the transistor property is modest (hole mobility of 1.8 cm2 V−1 s−1). The results suggest the feasibility of other air‐sensitive 2D nanomaterials for applications in nanoelectronic devices.

26 Apr 03:16

Tailoring Multilevel‐Stable Remanence States in Exchange‐Biased System through Spin‐Orbit Torque

by Jijun Yun, Qiaoning Bai, Ze Yan, Meixia Chang, Jian Mao, Yalu Zuo, Dezheng Yang, Li Xi, Desheng Xue
Tailoring Multilevel‐Stable Remanence States in Exchange‐Biased System through Spin‐Orbit Torque

Systematic tailoring of remanent magnetization is realized by spin‐orbit torque (SOT) in Pt/Co/IrMn stacks, which show double‐biased hysteresis loops. The evolution of remanence after SOT switching is illustrated by anomalous Hall resistance via magnetotransport measurements and domains via magneto–optical Kerr microscope measurements. This work may have potential applications in multilevel storage and neuromorphic computing.


Abstract

Multilevel remanence states have potential applications in ultra‐high‐density storage and neuromorphic computing. Continuous tailoring of the multilevel remanence states by spin‐orbit torque (SOT) is reported in perpendicularly magnetized Pt/Co/IrMn heterostructures. Double‐biased hysteresis loops with only one remanence state can be tuned from the positively or negatively single‐biased loops by SOT controlled sign of the exchange‐bias field. The remanence states associated with the heights of the sub‐loops are continually changed by tuning the ratio of the positively and negatively oriented ferromagnetic domains. The multilevel storage cells are demonstrated by reading the remanent Hall resistance through changing the sign and/or the magnitude of current pulse. The synaptic plasticity behaviors for neuromorphic computing are also simulated by varying the remanent Hall resistance under the consecutive current pulses. This work demonstrates that SOT is an effective method to tailor the remanence states in the double‐biased heavy metal/ferromagnetic/antiferromagnetic system. The multilevel‐stable remanence states driven by SOT show potential applications in future multilevel memories and neuromorphic computing devices.

26 Apr 03:12

Insights into the Photothermal Conversion of 2D MXene Nanomaterials: Synthesis, Mechanism, and Applications

by Dingxin Xu, Zhidong Li, Laisheng Li, Jing Wang
Insights into the Photothermal Conversion of 2D MXene Nanomaterials: Synthesis, Mechanism, and Applications

Photothermal conversion defines the direct translation of solar illumination into thermal energy, which enables 2D transition metal carbides/nitrides (MXenes) to find applications in diverse fields, such as solar steam generation and biomedicals. Synthetic strategies of MXenes and MXene‐based nanocomposites are summarized, and the mechanism and current applications of photothermal MXenes are introduced in detail.


Abstract

Since their discovery in 2011, 2D transition metal carbide/nitride (MXene) materials have received extensive interest due to their unique planar structure, chemical diversity, and superior physiochemical features. Very recently, MXenes have demonstrated outstanding photothermal conversion by virtue of excellent electromagnetic wave absorption capacity and a localized surface plasmon resonance effect. Photothermal conversion is an efficient way to utilize solar energy that allows the transformation of solar illumination into thermal energy, thus enabling MXenes to be applied in various fields, such as solar steam generation and biomedicals. However, the light‐to‐heat capability of MXenes has been paid much less attention until now. Recent progress in photothermal MXenes is reviewed to provide a comprehensive understanding of their photothermal conversion mechanism and applications. First, synthetic strategies of MXenes and their nanocomposites will be briefly summarized, and the discussion of the photothermal conversion mechanism and, most importantly, current advances in their photothermal applications will follow. It is highly anticipated that 2D MXenes, through elaborate material design and interdisciplinary approach, will become one of the mainstream photothermal materials and their application fields will also be expanded in the near future.

26 Apr 03:09

Extent of Fermi-surface reconstruction in the high-temperature superconductor HgBa2CuO4+{delta} [Physics]

by Mun K. Chan, Ross D. McDonald, B. J. Ramshaw, Jon B. Betts, Arkady Shekhter, Eric D. Bauer, Neil Harrison
High magnetic fields have revealed a surprisingly small Fermi surface in underdoped cuprates, possibly resulting from Fermi-surface reconstruction due to an order parameter that breaks translational symmetry of the crystal lattice. A crucial issue concerns the doping extent of such a state and its relationship to the principal pseudogap and...
28 Mar 04:56

Neuromorphic nanoelectronic materials

by Vinod K. Sangwan

Nature Nanotechnology, Published online: 02 March 2020; doi:10.1038/s41565-020-0647-z

This Review highlights the progress made towards the development of neuromorphic devices and architectures enabled by low-dimensional nanomaterials
28 Mar 04:56

COVID research: a year of scientific milestones

Nature, Published online: 05 May 2021; doi:10.1038/d41586-020-00502-w

Nature waded through the literature on the coronavirus — and summarized key papers as they appeared.
28 Mar 04:53

Excitons and Electron–Hole Liquid State in 2D γ‐Phase Group‐IV Monochalcogenides

by Nannan Luo, Wenhui Duan, Boris I. Yakobson, Xiaolong Zou
Excitons and Electron–Hole Liquid State in 2D γ‐Phase Group‐IV Monochalcogenides

A new phase of group‐IV monochalcogenides is predicted to exist in the 2D limit. They exhibit a camel's back band structure, which induces a distinct excitonic spectrum and strong excitonic absorption. Intriguingly, high‐temperature exciton gas to electron–hole liquid phase transition can be achieved with a much lower excitation power density compared to that observed in 2D group‐VI transition metal dichalcogenides.


Abstract

Different dispersion near the electronic band edge of a semiconductor can have great influence on its transport, thermoelectric, and optical properties. Using first‐principles calculations, it is demonstrated that a new phase of group‐IV monochalcogenides (γ‐MX, M = Ge, Sn; X = S, Se, or Te) can be stabilized in monolayer limit. γ‐MXs are shown to possess a unique band dispersion—that is, camel's back like structure—in the top valence band. The band nesting effect near the camel's back region induces a large excitonic absorbance and significantly different exciton behaviors from other 2D materials. Importantly, the small effective mass and the indirect characteristics of lowest‐energy exciton render it advantageous for the generation of electron–hole liquid state. After careful evaluation of the electron–hole dissociation temperature and the Mott critical density, it is predicted that a high‐temperature exciton gas to electron–hole liquid phase transition can be achieved in these materials with a low excitation power density. The findings open up new opportunities for both the fundamental research on exciton physics and design of excitonic devices based on 2D materials with distinct band dispersion.

20 Mar 03:31

Real-time detection of hepatitis B surface antigen using a hybrid graphene-gold nanoparticle biosensor

by F Walters, S Rozhko, D Buckley, E D Ahmadi, M Ali, Z Tehrani, J Mitchell, G Burwell, Y Liu, O Kazakova and O J Guy
A hybrid biosensor based on a graphene resistor functionalized with self-assembled Graphene-AuNPs (Gold Nanoparticles) is demonstrated for the real-time detection of hepatitis B surface antigen (HBsAg). The hybrid biosensor consists of a ssDNA sequence attached to a graphene resistor device via π – π stacking interactions in combination with a ssDNA functionalized AuNP. The ssDNA has complementary sequences which through hybridization, yield the graphene-AuNP hybrid biosensor. Real-time 2-point resistance measurements, performed using varying concentrations of HBsAg, show a linear dependence of resistance change against the logarithm of HBsAg concentration (log[HBsAg]). A limit of detection of 50 pg ml −1 was observed. Moreover, the hybrid biosensor platform has potential to be applied to any biomarker of interest.
20 Mar 03:30

Transport in two-dimensional topological materials: recent developments in experiment and theory

by Dimitrie Culcer, Aydın Cem Keser, Yongqing Li and Grigory Tkachov
We review theoretical and experimental highlights in transport in two-dimensional topological materials over the last five years. Topological materials comprise topological insulators, Weyl semimetals and topological superconductors. This review focuses on key developments in the understanding of transport phenomena involving surfaces and interfaces of two-dimensional topological materials that have not been covered elsewhere. The review is structured around the following general topics: (i) topological insulators are finding applications in magnetic devices, while controversy continues to surround Hall transport in doped samples and the general issue of topological protection; (ii) state-of-the-art experiments on transition metal dichalcogenides have revealed new valley-dependent electrical and optical phenomena which have spin-dependent counterparts in topological insulators; (iii) in Weyl semimetals the manifestations of Fermi arcs in transport are actively investigated as we...
20 Mar 03:25

Multiplex SERS Detection of Metabolic Alterations in Tumor Extracellular Media

by Javier Plou, Isabel García, Mathias Charconnet, Ianire Astobiza, Clara García‐Astrain, Cristiano Matricardi, Agustín Mihi, Arkaitz Carracedo, Luis M. Liz‐Marzán
Multiplex SERS Detection of Metabolic Alterations in Tumor Extracellular Media

Surface‐enhanced Raman scattering is used to monitor metabolic perturbations in the tumor extracellular environment in a label‐free and noninvasive manner, providing new readouts in the secretion of kynurenine, tryptophan, and purine derivative metabolites by cancer cells.


Abstract

The composition and intercellular interactions of tumor cells in the tissues dictate the biochemical and metabolic properties of the tumor microenvironment. The metabolic rewiring has a profound impact on the properties of the microenvironment, to an extent that monitoring such perturbations could harbor diagnostic and therapeutic relevance. A growing interest in these phenomena has inspired the development of novel technologies with sufficient sensitivity and resolution to monitor metabolic alterations in the tumor microenvironment. In this context, surface‐enhanced Raman scattering (SERS) can be used for the label‐free detection and imaging of diverse molecules of interest among extracellular components. Herein, the application of nanostructured plasmonic substrates comprising Au nanoparticles, self‐assembled as ordered superlattices, to the precise SERS detection of selected tumor metabolites, is presented. The potential of this technology is first demonstrated through the analysis of kynurenine, a secreted immunomodulatory derivative of the tumor metabolism and the related molecules tryptophan and purine derivatives. SERS facilitates the unambiguous identification of trace metabolites and allows the multiplex detection of their characteristic fingerprints under different conditions. Finally, the effective plasmonic SERS substrate is combined with a hydrogel‐based three‐dimensional cancer model, which recreates the tumor microenvironment, for the real‐time imaging of metabolite alterations and cytotoxic effects on tumor cells.

20 Mar 03:23

Function Follows Form: From Semiconducting to Metallic toward Superconducting PbS Nanowires by Faceting the Crystal

by Mohammad Mehdi Ramin Moayed, Sascha Kull, Angelique Rieckmann, Philip Beck, Michael Wagstaffe, Heshmat Noei, Andreas Kornowski, Ana B. Hungria, Rostyslav Lesyuk, Andreas Stierle, Christian Klinke
Function Follows Form: From Semiconducting to Metallic toward Superconducting PbS Nanowires by Faceting the Crystal

Function follows form: In the realm of nanomaterials, influencing fundamental properties by manipulating the dimensionality is a challenging but highly rewarding task. This vision is realized by exploiting the flexibility of colloidal synthesis to sculpt the crystal and to alter the electrical properties of lead‐sulfide nanostructures from semiconducting to metallic and superconducting.


Abstract

In the realm of colloidal nanostructures, with their immense capacity for shape and dimensionality control, the form is undoubtedly a driving factor for the tunability of optical and electrical properties in semiconducting or metallic materials. However, influencing the fundamental properties is still challenging and requires sophisticated surface or dimensionality manipulation. Such a modification is presented for the example of colloidal lead‐sulfide nanowires. It is shown that the electrical properties of lead sulfide nanostructures can be altered from semiconducting to metallic with indications of superconductivity, by exploiting the flexibility of the colloidal synthesis to sculpt the crystal and to form different surface facets. A particular morphology of lead sulfide nanowires is prepared through the formation of {111} surface facets, which shows metallic and superconducting properties in contrast to other forms of this semiconducting crystal, which contain other surface facets ({100} and {110}). This effect, which is investigated with several experimental and theoretical approaches, is attributed to the presence of lead‐rich {111} facets. The insights promote new strategies for tuning the properties of crystals and new applications for lead sulfide nanostructures.

20 Mar 03:13

Electron-phonon-driven three-dimensional metallicity in an insulating cuprate [Physics]

by Edoardo Baldini, Michael A. Sentef, Swagata Acharya, Thomas Brumme, Evgeniia Sheveleva, Fryderyk Lyzwa, Ekaterina Pomȷakushina, Christian Bernhard, Mark van Schilfgaarde, Fabrizio Carbone, Angel Rubio, Cedric Weber
The role of the crystal lattice for the electronic properties of cuprates and other high-temperature superconductors remains controversial despite decades of theoretical and experimental efforts. While the paradigm of strong electronic correlations suggests a purely electronic mechanism behind the insulator-to-metal transition, recently the mutual enhancement of the electron–electron and the...
12 Mar 13:37

Contact Engineering of Layered MoS2 via Chemically Dipping Treatments

by Seungho Bang, Sangyeob Lee, Amritesh Rai, Ngoc Thanh Duong, Iljo Kawk, Steven Wolf, Choong‐Heui Chung, Sanjay K. Banerjee, Andrew C. Kummel, Mun Seok Jeong, Jun Hong Park
Advanced Functional Materials Contact Engineering of Layered MoS2 via Chemically Dipping Treatments

A two‐step chemical functionalization method is developed to enhance the contact behavior of metal/MoS2 interfaces. After the two‐step chemical treatment, the unintentional defect states at the metal/MoS2 junctions are removed, resulting in facilitated injection of electron from metal to channels. Moreover, the present chemical method employs simple processes, enabling integration of this functionalization into conventional semiconductor processing.


Abstract

The performance of electronic/optoelectronic devices is governed by carrier injection through metal–semiconductor contact; therefore, it is crucial to employ low‐resistance source/drain contacts. However, unintentional introduction of extrinsic defects, such as substoichiometric oxidation states at the metal–semiconductor interface, can degrade carrier injection. In this report, controlling the unintentional extrinsic defect states in layered MoS2 is demonstrated using a two‐step chemical treatment, (NH4)2S(aq) treatment and vacuum annealing, to enhance the contact behavior of metal/MoS2 interfaces. The two‐step treatment induces changes in the contact of single layer MoS2 field effect transistors from nonlinear Schottky to Ohmic behavior, along with a reduction of contact resistance from 35.2 to 5.2 kΩ. Moreover, the enhancement of I ON and electron field effect mobility of single layer MoS2 field effect transistors is nearly double for n‐branch operation. This enhanced contact behavior resulting from the two‐step treatment is likely due to the removal of oxidation defects, which can be unintentionally introduced during synthesis or fabrication processes. The removal of oxygen defects is confirmed by scanning tunneling microscopy and X‐ray photoelectron spectroscopy. This two‐step (NH4)2S(aq) chemical functionalization process provides a facile pathway to controlling the defect states in transition metal dichalcogenides (TMDs), to enhance the metal‐contact behavior of TMDs.

12 Mar 13:34

Salt‐Assisted Synthesis of 2D Materials

by Liang Huang, Zhimi Hu, Hongrun Jin, Jiabin Wu, Kaisi Liu, Zheheng Xu, Jun Wan, He Zhou, Jiangjiang Duan, Bin Hu, Jun Zhou
Advanced Functional Materials Salt‐Assisted Synthesis of 2D Materials Melting point (Tm) of salts

Salt‐assisted synthesis can be divided into the salt‐template method and molten salt method based on the state of the salts at different temperatures. The roles of salts in salt‐assisted methods comprise the hard template effect, lattice match mechanism, ion‐induced effect, and liquid exfoliation.


Abstract

2D materials have demonstrated good chemical, optical, electrical, and magnetic characteristics, and offer great potential in numerous applications. Corresponding synthesis technologies of 2D materials that are high‐quality, high‐yield, low‐cost, and time‐saving are highly desired. Salt‐assisted methods are emerging technologies that can meet these requirements for the fabrication of 2D materials. Herein, the recent process for the salt‐assisted synthesis of 2D materials and their typical applications are summarized. First, the properties of salt crystals and molten salts are briefly introduced, and then some examples of 2D materials synthesis with the assistance of salt as well as their representative applications are presented. The underlying mechanisms of salts with different states on the formation of 2D morphology are discussed to aid in the rational design of synthetic route of 2D materials. At last, the challenges and future perspectives for salt‐assisted methods are briefly described. This review provides guidance for the controllable synthesis of 2D materials based on the salt‐assisted approaches.

12 Mar 13:31

Tuning ferromagnetism at room temperature by visible light [Physics]

by Balint Nafradi, Peter Szirmai, Massimo Spina, Andrea Pisoni, Xavier Mettan, Norbert M. Nemes, Laszlo Forro, Endre Horvath
Most digital information today is encoded in the magnetization of ferromagnetic domains. The demand for ever-increasing storage space fuels continuous research for energy-efficient manipulation of magnetism at smaller and smaller length scales. Writing a bit is usually achieved by rotating the magnetization of domains of the magnetic medium, which relies...