08 Jul 10:48
by Yuanwen Zhang,
Jun Mei,
Cheng Yan,
Ting Liao,
John Bell,
Ziqi Sun
Recent progress in developing bioinspired 2D nanomaterials for sustainable energy and environmental applications is summarized. Learning from nature has been proved to be an effective approach to take full advantage of the potential of materials and to build a sustainable society by using existing materials.
Abstract
The increasing demand for constructing ecological civilization and promoting socially sustainable development has encouraged scientists to develop bioinspired materials with required properties and functions. By bringing science and nature together, plenty of novel materials with extraordinary properties can be created by learning the best from natural species. In combination with the exceptional features of 2D nanomaterials, bioinspired 2D nanomaterials and technologies have delivered significant achievements. Here, the progress over the past decade in bioinspired 2D photonic structures, energy nanomaterials, and superwetting materials, is summarized, together with the challenges and opportunities in developing bioinspired materials for sustainable energy and environmental technologies.
08 Jul 10:48
by Da Luo,
Meihui Wang,
Yunqing Li,
Changsik Kim,
Ka Man Yu,
Yohan Kim,
Huijun Han,
Mandakini Biswal,
Ming Huang,
Youngwoo Kwon,
Min Goo,
Dulce C. Camacho‐Mojica,
Haofei Shi,
Won Jong Yoo,
Michael S. Altman,
Hyung‐Joon Shin,
Rodney S. Ruoff
Adlayer‐free large‐area single‐crystal graphene film is grown on Cu(111) foil by chemical vapor deposition. Such graphene film contains parallel long graphene folds up to centimeters in length, with a separation of ≈20–50 µm and a width of ≈80–100 nm, which allows straightforward fabrication of integrated high‐performance electronic devices within the regions between the folds.
Abstract
To date, thousands of publications have reported chemical vapor deposition growth of “single layer” graphene, but none of them has described truly single layer graphene over large area because a fraction of the area has adlayers. It is found that the amount of subsurface carbon (leading to additional nuclei) in Cu foils directly correlates with the extent of adlayer growth. Annealing in hydrogen gas atmosphere depletes the subsurface carbon in the Cu foil. Adlayer‐free single crystal and polycrystalline single layer graphene films are grown on Cu(111) and polycrystalline Cu foils containing no subsurface carbon, respectively. This single crystal graphene contains parallel, centimeter‐long ≈100 nm wide “folds,” separated by 20 to 50 µm, while folds (and wrinkles) are distributed quasi‐randomly in the polycrystalline graphene film. High‐performance field‐effect transistors are readily fabricated in the large regions between adjacent parallel folds in the adlayer‐free single crystal graphene film.
08 Jul 10:47
by Beibei Fu,
Cong Wang,
Yantao Sun,
Jiarong Yao,
Yu Wang,
Fayuan Ge,
Fangxu Yang,
Zheyuan Liu,
Yanfeng Dang,
Xiaotao Zhang,
Xiangfeng Shao,
Rongjin Li,
Wenping Hu
A “phase separation” molecular design strategy toward 2D molecular crystals (2DMCs) is proposed. The designed molecule is composed of a π core with alkyl chains above and below. “Phase separation” drives the self‐assembly of millimeter‐sized monolayer and few‐layer 2DMCs. Organic phototransistors are constructed based on the 2DMCs with unprecedented photosensitivity, up to 2.58 × 107.
Abstract
2D molecular crystals (2DMCs) have attracted considerable attention because of their unique optoelectronic properties and potential applications. Taking advantage of the solution processability of organic semiconductors, solution self‐assembly is considered an effective way to grow large‐area 2DMCs. However, this route is largely blocked because a precise molecular design towards 2DMCs is missing and little is known about the relationship between 2D solution self‐assembly and molecular structure. A “phase separation” molecular design strategy towards 2DMCs is proposed and layer‐by‐layer growth of millimeter‐sized monolayer or few‐layer 2DMCs is realized. High‐performance organic phototransistors are constructed based on the 2DMCs with unprecedented photosensitivity (2.58 × 107), high responsivity (1.91 × 104 A W−1), and high detectivity (4.93 × 1015 Jones). This “phase separation” molecular design strategy provides a guide for the design and synthesis of novel organic semiconductors that self‐assemble into large‐area 2DMCs for advanced organic (opto)electronics.
08 Jul 10:43
Nanoscale, 2019, 11,13961-13967
DOI: 10.1039/C9NR03345A, Paper
Jiwon Shin, Kyungjune Cho, Tae-Young Kim, Jinsu Pak, Jae-Keun Kim, Woocheol Lee, Jaeyoung Kim, Seungjun Chung, Woong-Ki Hong, Takhee Lee
We investigated the effect of proton beam irradiation on WSe2 ambipolar field effect transistors with various beam dose conditions.
The content of this RSS Feed (c) The Royal Society of Chemistry
08 Jul 10:42
Nanoscale, 2019, 11,14684-14690
DOI: 10.1039/C9NR03281A, Paper
Jan Luxa, Petr Marvan, Petr Lazar, Zdeněk Sofer
The hydrogen evolution reaction (HER) is one of the most promising ways to produce clean energy. The hydrogen evolution overpotential of rhenium chalcogenides can be significantly decreased by formation of chalcogenide vacancies.
The content of this RSS Feed (c) The Royal Society of Chemistry
08 Jul 10:41
Nanoscale, 2019, 11,13924-13933
DOI: 10.1039/C9NR03752G, Paper
Jinchen Wei, Chao Wang, Tao Zhang, Chen-Min Dai, Shiyou Chen
450 layered di-metal chalcogenides are identified and may be exfoliated into novel 2D materials, including 142 semiconductors and 83 magnetic crystals.
The content of this RSS Feed (c) The Royal Society of Chemistry
08 Jul 02:38
by Savas Delikanli,
Guannan Yu,
Aydan Yeltik,
Sumanta Bose,
Talha Erdem,
Junhong Yu,
Onur Erdem,
Manoj Sharma,
Vijay Kumar Sharma,
Ulviyya Quliyeva,
Sushant Shendre,
Cuong Dang,
Dao Hua Zhang,
Tze Chien Sum,
Weijun Fan,
Hilmi Volkan Demir
Synthesis of highly luminescent twomonolayer CdSe nanoplatelets (NPLs) and a systematic investigation of carrier dynamics in these NPLs exhibiting broad photoluminescence emission covering the visible region is presented. The intrinsic absorption of the two‐monolayer CdSe NPLs is significantly larger than that of CdSe quantum dots at their first exciton signifying the manifestation of giant oscillator strength.
Abstract
Surface effects in atomically flat colloidal CdSe nanoplatelets (NLPs) are significantly and increasingly important with their thickness being reduced to subnanometer level, generating strong surface related deep trap photoluminescence emission alongside the bandedge emission. Herein, colloidal synthesis of highly luminescent two‐monolayer (2ML) CdSe NPLs and a systematic investigation of carrier dynamics in these NPLs exhibiting broad photoluminescence emission covering the visible region with quantum yields reaching 90% in solution and 85% in a polymer matrix is shown. The astonishingly efficient Stokes‐shifted broadband photoluminescence (PL) emission with a lifetime of ≈100 ns and the extremely short PL lifetime of around 0.16 ns at the bandedge signify the participation of radiative midgap surface centers in the recombination process associated with the underpassivated Se sites. Also, a proof‐of‐concept hybrid LED employing 2ML CdSe NPLs is developed as color converters, which exhibits luminous efficacy reaching 300 lm Wopt
−1. The intrinsic absorption of the 2ML CdSe NPLs (≈2.15 × 106 cm−1) reported in this study is significantly larger than that of CdSe quantum dots (≈2.8 × 105 cm−1) at their first exciton signifying the presence of giant oscillator strength and hence making them favorable candidates for next‐generation light‐emitting and light‐harvesting applications.
08 Jul 02:37
by Xu Jing,
Yury Illarionov,
Eilam Yalon,
Peng Zhou,
Tibor Grasser,
Yuanyuan Shi,
Mario Lanza
Developing field effect transistors with channels made of 2D semiconducting materials can produce substantial advances in several key technologies. However, their production at the wafer level for industrial application remains a big challenge. This work provides critical advice on materials synthesis, the effect of the electrode/channel contact resistance, dielectric environment, channel length, and channel thickness.
Abstract
The continuous miniaturization of field effect transistors (FETs) dictated by Moore's law has enabled continuous enhancement of their performance during the last four decades, allowing the fabrication of more powerful electronic products (e.g., computers and phones). However, as the size of FETs currently approaches interatomic distances, a general performance stagnation is expected, and new strategies to continue the performance enhancement trend are being thoroughly investigated. Among them, the use of 2D semiconducting materials as channels in FETs has raised a lot of interest in both academia and industry. However, after 15 years of intense research on 2D materials, there remain important limitations preventing their integration in solid‐state microelectronic devices. In this work, the main methods developed to fabricate FETs with 2D semiconducting channels are presented, and their scalability and compatibility with the requirements imposed by the semiconductor industry are discussed. The key factors that determine the performance of FETs with 2D semiconducting channels are carefully analyzed, and some recommendations to engineer them are proposed. This report presents a pathway for the integration of 2D semiconducting materials in FETs, and therefore, it may become a useful guide for materials scientists and engineers working in this field.
08 Jul 02:37
by Wenchao Wang,
Sai Zhu,
Yingnan Cao,
Ying Tao,
Xin Li,
Donglai Pan,
David Lee Phillips,
Dieqing Zhang,
Ming Chen,
Guisheng Li,
Hexing Li
Chemical bonding of ultrathin MoS2 flakes mediates the electron transfer channel from the bulk to the surface of crystal TiO2
. Embedded ultrathin MoS2 effectively suppresses charge trapping and shows excellent photoactivity and high stability with the increasing exposed catalytically edges. The transient fluorescence kinetics confirms the prolonged lifetime of photogenerated active electrons in an MoS2/TiO2 composite.
Abstract
Exploring TiO2‐photocatalysts for sunlight conversion has high demand in artificial photosynthesis. In this work, edge‐enriched ultrathin molybdenum disulfide (MoS2) flakes are uniformly embedded into the bulk of yolk‐shell TiO2 as a cocatalyst to accelerate photogenerated‐electron transfer from the bulk to the surface of TiO2. The as‐formed MoS2/TiO2 (0.14 wt%) hybrids exhibit a high hydrogen evolution rate (HER) of 2443 µmol g−1 h−1, about 1000% and 470% of that of pristine TiO2 (247 µmol g−1 h−1) and bulk MoS2 decorated TiO2 (513 µmol g−1 h−1). Such a greatly enhanced HER is attributed to the exposed catalytic edges of the ultrathin MoS2 flakes with a robust chemical linkage (TiS bond), providing rapid charge transfer channels between TiO2 and MoS2. The catalytic stability is promoted by the antiaggregation of the highly dispersed MoS2 flakes in the bulk of yolk‐shell TiO2. The exponential fitted decay kinetics of time‐resolved photoluminescence (ns‐PL) spectra illustrates that embedding ultrathin MoS2 flakes in TiO2 effectively decreases the average lifetime of PL in the MoS2/TiO2 hybrids (τave = 4.55 ns), faster than that of pristine TiO2 (≈7.17 ns) and the bulk MoS2/TiO2 (≈6.13 ns), allowing a superior charge separation and charge trapping process for reducing water.
08 Jul 02:36
by Ping Wang,
Tao Wang,
Hui Wang,
Xiaoxiao Sun,
Pu Huang,
Bowen Sheng,
Xin Rong,
Xiantong Zheng,
Zhaoying Chen,
Yixin Wang,
Ding Wang,
Huapeng Liu,
Fang Liu,
Liuyun Yang,
Duo Li,
Ling Chen,
Xuelin Yang,
Fujun Xu,
Zhixin Qin,
Junjie Shi,
Tongjun Yu,
Weikun Ge,
Bo Shen,
Xinqiang Wang
Large bandgap energy in atomically thin AlN is experimentally confirmed using spectrally resolved X‐ray photoelectron spectroscopy and spatially resolved electron energy loss spectroscopy measurements on AlN nanotubes with controllable wall thickness. The AlN nanotubes are fabricated via selective thermal evaporating the GaN/AlN core/shell nanowires, where the GaN cores entirely decompose from the bottom open end.
Abstract
Ultrathin III‐nitrides beyond BN, such as GaN and AlN, have attracted much research interest due to their potential applications in 2D optoelectronic devices. Taking advantage of the atomic thickness, the bandgap is expected to be widened in these thin films due to quantum confinement. As a promising intrinsic dielectric and tunneling layer for optoelectronic devices, ultrathin freestanding AlN structures have not been systematically studied, and the band structure still remains in the theoretical description. In this work, atomically thin hexagonal AlN nanotubes with controllable wall thickness have been fabricated via selective thermal evaporating the GaN/AlN core/shell nanowires, where the GaN cores entirely decomposed and are removed from the bottom open end while the robust AlN shells remain and form tubular structures. The bandgap energy of 9.2±0.1 eV is confirmed through spectrally resolved X‐ray photoelectron spectroscopy and spatially resolved electron energy loss spectroscopy measurements on AlN nanotubes with the wall thickness of two monolayers.
08 Jul 02:36
by Wenhao Huang,
Lei Yin,
Feng Wang,
Ruiqing Cheng,
Zhenxing Wang,
Marshet Getaye Sendeku,
Junjun Wang,
Ningning Li,
Yuyu Yao,
Xiaoguang Yang,
Chongxin Shan,
Tao Yang,
Jun He
A nonvolatile multibit optoelectronic memory in top‐floating‐gated van der Waals heterostructures is demonstrated. The fabricated device exhibits excellent electrical and optoelectrical memory performance, including large memory windows (95 V), a high on/off ratio (106), excellent retention (104), and multibit storage (7/6 for the electrical operation, 13/6/3 for the optical operation).
Abstract
Nonvolatile memories based on van der Waals heterostructures have been proved to be promising candidates for next‐generation data storage devices. However, little attention has been focused on the structure with separated floating and control gates (the floating gates and control gates distribute at the different side of the channels), which were recently predicted to be capable of further improving device performance. Here, nonvolatile multibit optoelectronic memories are demonstrated using MoS2, hexagonal boron nitride (h‐BN), and graphene in a top‐floating‐gated structure. With separated top graphene floating gate, the devices show a large memory window (≈95 V) via sweeping gate voltage from 80 to −80 V, a high on/off ratio (≈106) with an ultralow dark current (≈10−14 A), as well as excellent retention characteristic (≈104 s) and cyclic endurance. In addition, these devices can also be erased by a laser illumination with broadband spectrum after being electrically programmed. For the multilevel storage property, 7/6 stages controlled by different electrical operations, and 13/6/3 stages by different laser pulse illuminations are gained. The obtained results show a promising performance for nonvolatile optoelectronic memory using a top‐floating‐gated structure.
08 Jul 02:34
by Mohammad B. Ghasemian,
Mohannad Mayyas,
Shuhada A. Idrus‐Saidi,
Muhammad A. Jamal,
Jiong Yang,
Sajjad S. Mofarah,
Esmaeil Adabifiroozjaei,
Jianbo Tang,
Nitu Syed,
Anthony P. O'Mullane,
Torben Daeneke,
Kourosh Kalantar‐Zadeh
A “liquid metal”–“liquid solution” reaction to grow Cabrera–Mott like monolayers of hydrated MnO2
is introduced. These self‐limiting monolayers are formed on the surface of the eutectic EGaIn. A unique phenomenon of metal dealloying is observed as a result of mechanical agitation, leading to an extraordinary gallium migration out into oxidative dissolution, leaving an indium solid core behind, within a porous shell.
Abstract
Liquid metals offer unprecedented chemistry. Here it is shown that they can facilitate self‐limiting oxidation processes on their surfaces, which enables the growth of metal oxides that are atomically thin. This claim is exemplified by creating atomically thin hydrated MnO2 using a Galvanic replacement reaction between permanganate ions and a liquid gallium–indium alloy (EGaIn). The “liquid solution”–“liquid metal” process leads to the reduction of the permanganate ions, resulting in the formation of the oxide monolayer at the interface. It is presented that under mechanical agitation liquid metal droplets are established, and simultaneously, hydrated gallium oxides and manganese oxide sheets delaminate themselves from the interfacial boundaries. The produced nanosheets encapsulate a metallic core, which is found to consist of solid indium only, with the full migration of gallium out of the droplets. This process produces core/shell structures, where the shells are made of stacked atomically thin nanosheets. The obtained core/shell structures are found to be an efficient photocatalyst for the degradation of an organic dye under simulated solar irradiation. This study presents a new research direction toward the modification and functionalization of liquid metals through spontaneous interfacial redox reactions, which has implications for many applications beyond photocatalysis.
08 Jul 02:34
by Jun Hong Park†‡¶, Amritesh Rai?¶, Jeongwoon Hwang#?, Chenxi Zhang#, Iljo Kwak‡, Steven F. Wolf‡, Suresh Vishwanath?, Xinyu Liu?, Malgorzata Dobrowolska?, Jacek Furdyna?, Huili Grace Xing??, Kyeongjae Cho#, Sanjay K. Banerjee?, and Andrew C. Kummel*‡§
ACS Nano
DOI: 10.1021/acsnano.8b09351
08 Jul 02:31
by Rui Ma†, Huairuo Zhang*‡§, Youngdong Yoo?, Zachary Patrick Degregorio?, Lun Jin?, Prafful Golani†, Javad Ghasemi Azadani†, Tony Low†, James E. Johns?, Leonid A. Bendersky§, Albert V. Davydov§, and Steven J. Koester*†
ACS Nano
DOI: 10.1021/acsnano.9b02785
08 Jul 02:31
by Sidi Fan†‡?, Quoc An Vu†‡?, Sanghyub Lee†‡, Thanh Luan Phan§, Gyeongtak Han‡, Young-Min Kim‡, Woo Jong Yu*§, and Young Hee Lee*†‡
ACS Nano
DOI: 10.1021/acsnano.9b03342
08 Jul 02:30
by Jia-Shiang Chen†‡, Mingxing Li†, Qin Wu†, Eduard Fron§, Xiao Tong†, and Mircea Cotlet*†
ACS Nano
DOI: 10.1021/acsnano.9b04367
08 Jul 02:25
by Huaping Wang†‡, Xudong Xue§, Qianqing Jiang†‡, Yanlei Wang#, Dechao Geng†‡, Le Cai†‡, Liping Wang§, Zhiping Xu*¶, and Gui Yu*†‡
Journal of the American Chemical Society
DOI: 10.1021/jacs.9b05705
01 Jul 02:36
by Alexander W. Bataller, Robert A. Younts, Avinash Rustagi, Yiling Yu, Hossein Ardekani, Alexander Kemper, Linyou Cao, and Kenan Gundogdu*
Nano Letters
DOI: 10.1021/acs.nanolett.9b02578
01 Jul 02:36
by J. Karthikeyan*†, Hannu-Pekka Komsa†, Matthias Batzill‡, and Arkady V. Krasheninnikov*§†
Nano Letters
DOI: 10.1021/acs.nanolett.9b01555
01 Jul 02:33
by Xu Xiao,
Hao Wang,
Weizhai Bao,
Patrick Urbankowski,
Long Yang,
Yao Yang,
Kathleen Maleski,
Linfan Cui,
Simon J. L. Billinge,
Guoxiu Wang,
Yury Gogotsi
Two‐dimensional arrays of transition metal nitride nanocrystals are synthesized by using a general salt‐templating method. During ammoniation, the initially formed metal oxides are etched and topochemically transformed to metal nitrides, resulting in interconnected metal nitride nanocrystals. Such a unique structure provides both high surface area and conductivity, as demonstrated in a highly stable Li–S battery.
Abstract
The synthesis of low‐dimensional transition metal nitride (TMN) nanomaterials is developing rapidly, as their fundamental properties, such as high electrical conductivity, lead to many important applications. However, TMN nanostructures synthesized by traditional strategies do not allow for maximum conductivity and accessibility of active sites simultaneously, which is a crucial factor for many applications in plasmonics, energy storage, sensing, and so on. Unique interconnected two‐dimensional (2D) arrays of few‐nanometer TMN nanocrystals not only having electronic conductivity in‐plane, but also allowing transport of ions and electrolyte through the porous nanosheets, which are obtained by topochemical synthesis on the surface of a salt template, are reported. As a demonstration of their application in a lithium–sulfur battery, it is shown that 2D arrays of several nitrides can achieve a high initial capacity of >1000 mAh g−1 at 0.2 C and only about 13% degradation over 1000 cycles at 1 C under a high areal sulfur loading (>5 mg cm−2).
01 Jul 02:32
Nanoscale, 2019, 11,13567-13575
DOI: 10.1039/C9NR03315G, Paper
Baozeng Zhou, Zheng Li, Jiaming Wang, Xuechen Niu, Chongbiao Luan
Schematic of the WS2/MnO2 heterostructure for valleytronic devices and the diagram of the anomalous valley Hall effect.
The content of this RSS Feed (c) The Royal Society of Chemistry
01 Jul 02:31
Nanoscale, 2019, 11,12871-12877
DOI: 10.1039/C9NR03441B, Paper
Jaewoo Shim, Sung woon Jang, Ji-Hye Lim, Hyeongjun Kim, Dong-Ho Kang, Kwan-Ho Kim, Seunghwan Seo, Keun Heo, Changhwan Shin, Hyun-Yong Yu, Sungjoo Lee, Dae-Hong Ko, Jin-Hong Park
We report a polarity controllable TMD transistor that can operate as both an n- and a p-channel transistor. We then demonstrate a complementary inverter circuit on a single TMD material and its expandability toward a three-stage ring oscillator.
The content of this RSS Feed (c) The Royal Society of Chemistry
01 Jul 02:31
Nanoscale, 2019, 11,13800-13806
DOI: 10.1039/C9NR04287C, Paper
Dingbo Zhang, Yue Hu, Hongxia Zhong, Shengjun Yuan, Chang Liu
Applied electric fields can modulate effectively the contact formation and doping of graphene in graphene/MTe heterostructures.
The content of this RSS Feed (c) The Royal Society of Chemistry
01 Jul 02:30
Nanoscale, 2019, 11,13511-13520
DOI: 10.1039/C9NR03480C, Paper
Qing Shen, Pengjie Jiang, Hongcheng He, Changmiao Chen, Yang Liu, Ming Zhang
MoSe2/C-700 first serves as an electrode material for nonaqueous potassium-based battery–supercapacitor hybrid devices and displays an excellent specific capacity.
The content of this RSS Feed (c) The Royal Society of Chemistry
01 Jul 02:19
by Bo Sun,
Ziyi Wang,
Zhiyong Liu,
Xianhua Tan,
Xingyue Liu,
Tielin Shi,
Jianxin Zhou,
Guanglan Liao
Plasmon intensity in the gap of Ag nanocubes and underneath Ag films is about four orders of magnitude higher than that of Ag nanospheres and nanorods. The corresponding plasma‐enhanced flexible MoS2 photodetector exhibits excellent performance (7940 A W−1) at low operation potential. Besides, the devices also demonstrate a good mechanical endurance during 10 000 bending cycles.
Abstract
Although noble metal nanoparticles as nanoantenna have been applied in 2D material‐based optoelectronic devices, the impact of their morphologies on device performance is still rarely investigated. In this paper, the tailoring of silica‐coated Ag nanocubes with optimized localized surface plasmon in a gap mode for a flexible MoS2 photodetector is demonstrated for the first time. The finite different time domain simulation reveals that the Ag nanocubes with an edge length of 60 nm achieve a maximum electromagnetic field enhancement of 2.8 × 106‐fold under excitation of 520 nm incident light, which is about four orders of magnitude higher than that of Ag nanospheres and nanorods. The Ag nanocube modified devices exhibit excellent performance at low operating potential. External photoresponsivity reaches 7940 A W−1 at 3 V under an incident power of 2.2 pW, achieving a 38‐fold enhancement compared to the pristine MoS2 photodetector, which is more than one order of magnitude higher than most of the reported MoS2 photodetectors. The flexible devices also display a good mechanical endurance during 10 000 bending cycles. These results indicate that Ag nanocubes coupled with Ag films show great prospect for their application in the field of 2D material‐based optoelectronic devices.
01 Jul 02:17
by Tiefeng Yang†‡#, Xiao Wang‡#, Biyuan Zheng†#, Zhaoyang Qi†#, Chao Ma†, Yuhao Fu§, Yongping Fu?, Matthew P. Hautzinger?, Ying Jiang‡, Ziwei Li†, Peng Fan‡, Fang Li‡, Weihao Zheng‡, Ziyu Luo†, Jie Liu?, Bin Yang†, Shula Chen†, Dong Li†, Lijun Zhang§, Song Jin?, and Anlian Pan*†‡
ACS Nano
DOI: 10.1021/acsnano.9b02676
01 Jul 02:16
by Jun Chen, Gyeong Hee Ryu, Sapna Sinha, and Jamie H. Warner*
ACS Nano
DOI: 10.1021/acsnano.9b03645
01 Jul 02:16
by Fan Zhang†?, Zhe Wang‡?, Jiyu Dong§?, Anmin Nie*§, Jianyong Xiang§, Wenguang Zhu*‡, Zhongyuan Liu§, and Chenggang Tao*†
ACS Nano
DOI: 10.1021/acsnano.9b02764
01 Jul 02:15
by Jianping Shi†‡§?, Yahuan Huan†‡, Min Hong†‡, Runzhang Xu?, Pengfei Yang†‡, Zhepeng Zhang†‡, Xiaolong Zou?, and Yanfeng Zhang*†‡
ACS Nano
DOI: 10.1021/acsnano.9b04312
01 Jul 02:14
by Ilmin Lee†, Won Tae Kang†‡, Yong Seon Shin†‡, Young Rae Kim†, Ui Yeon Won†, Kunnyun Kim?, Dinh Loc Duong‡, Kiyoung Lee§, Jinseong Heo§, Young Hee Lee‡?, and Woo Jong Yu*†
ACS Nano
DOI: 10.1021/acsnano.9b03993
