01 May 01:42
Nanoscale, 2020, 12,10890-10911
DOI: 10.1039/D0NR01198C, Review Article
Fangzhu Qing, Yufeng Zhang, Yuting Niu, Richard Stehle, Yuanfu Chen, Xuesong Li
The transfer process is crucial for obtaining high-quality graphene for its large-scale industrial application.
The content of this RSS Feed (c) The Royal Society of Chemistry
01 May 01:41
by F Fabbri*†?, F. Dinelli‡, S. Forti§, L. Sementa?, S. Pace§#, G. Piccinini§?, A. Fortunelli?, C. Coletti§#, and P. Pingue?
The Journal of Physical Chemistry C
DOI: 10.1021/acs.jpcc.0c00350
01 May 01:41
by Fuhua Li and Qing Tang*
The Journal of Physical Chemistry C
DOI: 10.1021/acs.jpcc.0c01094
01 May 01:41
Nanoscale, 2020, 12,17272-17280
DOI: 10.1039/C9NR09897F, Paper
Rahul Debnath, Indrajit Maity, Rabindra Biswas, Varun Raghunathan, Manish Jain, Arindam Ghosh
Here, we demonstrate the systematic evolution of the interlayer coupling and electron-phonon coupling strength with twist angle in bilayer MoS2 using a combination of Raman spectroscopy and a combination of classical and first-principles based simulations.
The content of this RSS Feed (c) The Royal Society of Chemistry
01 May 01:33
by Tanweer Ahmed*†, Pavithra Bellare‡, Rahul Debnath†, Ahin Roy‡, Narayanan Ravishankar‡, and Arindam Ghosh*†§
ACS Nano
DOI: 10.1021/acsnano.0c01079
01 May 01:32
by Jialu Chen, Wesley R. Walker, Luzhu Xu, Olga Krysiak, Zimin She, and Michael A. Pope*
ACS Nano
DOI: 10.1021/acsnano.9b10182
01 May 01:32
by Giulia Tagliabue†‡, Joseph S. DuChene†, Adela Habib§, Ravishankar Sundararaman§, and Harry A. Atwater*†
ACS Nano
DOI: 10.1021/acsnano.0c00713
01 May 01:31
by Renu Rani†, Anthony Yoshimura‡, Shreeja Das?#, Mihir Ranjan Sahoo#¶, Anirban Kundu†, Kisor K. Sahu?#, Vincent Meunier‡§, Saroj K. Nayak#¶, Nikhil Koratkar*§?, and Kiran Shankar Hazra*†
ACS Nano
DOI: 10.1021/acsnano.0c02418
01 May 01:30
by Itai Epstein*†?, Bernat Terre´s†?, Andre´ J. Chaves‡, Varun-Varma Pusapati†, Daniel A. Rhodes¶, Bettina Frank§, Valentin Zimmermann§, Ying Qin?, Kenji Watanabe?, Takashi Taniguchi?, Harald Giessen§, Sefaattin Tongay?, James C. Hone¶, Nuno M. R. Peres#?, and Frank H. L. Koppens*†?
Nano Letters
DOI: 10.1021/acs.nanolett.0c00492
01 May 01:29
by Ido Levy†‡, Cody Youmans§?, Thor Axtmann Garcia†‡, Haiming Deng§?, Steven Alsheimer§, Christophe Testelin?, Lia Krusin-Elbaum§?, Pouyan Ghaemi§?, and Maria C. Tamargo*†‡?
Nano Letters
DOI: 10.1021/acs.nanolett.0c00338
01 May 01:29
by Sang Sub Han†‡, Tae-Jun Ko†, Changhyeon Yoo†, Mashiyat Sumaiya Shawkat†§, Hao Li†?, Bo Kyung Kim?, Woong-Ki Hong?, Tae-Sung Bae?, Hee-Suk Chung?, Kyu Hwan Oh‡, and Yeonwoong Jung*†??
Nano Letters
DOI: 10.1021/acs.nanolett.0c01089
01 May 01:16
by Nan Zhang,
Fangfang Zheng,
Bolong Huang,
Yujin Ji,
Qi Shao,
Youyong Li,
Xiangheng Xiao,
Xiaoqing Huang
Activated Bi2Te3 nanoplates are demonstrated as highly universal and robust electrocatalysts for reduction of small molecules, where they exhibit nearly 100% H2O2 selectivity for the oxygen reduction reaction, 89.6% Faradaic efficiency (FE) of HCOOH for the CO2 reduction reaction, and 7.9% FE of NH3 for the nitrogen reduction reaction, showing a new class of electrocatalysts for conversion of small molecules with potential practical applications.
Abstract
The electroreduction of small molecules to high value‐added chemicals is considered as a promising way toward the capture and utilization of atmospheric small molecules. Discovering cheap and efficient electrocatalysts with simultaneously high activity, selectivity, durability, and even universality is desirable yet challenging. Herein, it is demonstrated that Bi2Te3 nanoplates (NPs), cheap and noble‐metal‐free electrocatalysts, can be adopted as highly universal and robust electrocatalysts, which can efficiently reduce small molecules (O2, CO2, and N2) into targeted products simultaneously. They can achieve excellent activity, selectivity and durability for the oxygen reduction reaction with almost 100% H2O2 selectivity, the CO2 reduction reaction with up to 90% Faradaic efficiency (FE) of HCOOH, and the nitrogen reduction reaction with 7.9% FE of NH3. After electrochemical activation, an obvious Te dissolution happens on the Bi2Te3 NPs, creating lots of Te vacancies in the activated Bi2Te3 NPs. Theoretical calculations reveal that the Te vacancies can modulate the electronic structures of Bi and Te. Such a highly electroactive surface with a strong preference in supplying electrons for the universal reduction reactions improves the electrocatalytic performance of Bi2Te3. The work demonstrates a new class of cheap and versatile catalysts for the electrochemical reduction of small molecules with potential practical applications.
01 May 01:13
by Yongjian Zhou,
Nikhilesh Maity,
Amritesh Rai,
Rinkle Juneja,
Xianghai Meng,
Anupam Roy,
Yanyao Zhang,
Xiaochuan Xu,
Jung‐Fu Lin,
Sanjay K. Banerjee,
Abhishek K. Singh,
Yaguo Wang
Two stacking orders of ReS2 are identified. Stacking AA has negligible displacement across layers and stacking AB has a one‐unit cell displacement along the a ‐axis. AB stacking has stronger interlayer coupling than AA. The cross‐layer displacement in AB stacking disrupts excited‐state excitons. Vibrational, optical properties and carrier dynamics in two stacking orders are drastically different.
Abstract
Two distinct stacking orders in ReS2 are identified without ambiguity and their influence on vibrational, optical properties and carrier dynamics are investigated. With atomic resolution scanning transmission electron microscopy (STEM), two stacking orders are determined as AA stacking with negligible displacement across layers, and AB stacking with about a one‐unit cell displacement along the a axis. First‐principles calculations confirm that these two stacking orders correspond to two local energy minima. Raman spectra inform a consistent difference of modes I & III, about 13 cm−1 for AA stacking, and 20 cm−1 for AB stacking, making a simple tool for determining the stacking orders in ReS2. Polarized photoluminescence (PL) reveals that AB stacking possesses blueshifted PL peak positions, and broader peak widths, compared with AA stacking, indicating stronger interlayer interaction. Transient transmission measured with femtosecond pump–probe spectroscopy suggests exciton dynamics being more anisotropic in AB stacking, where excited state absorption related to Exc. III mode disappears when probe polarization aligns perpendicular to b axis. The findings underscore the stacking‐order driven optical properties and carrier dynamics of ReS2, mediate many seemingly contradictory results in the literature, and open up an opportunity to engineer electronic devices with new functionalities by manipulating the stacking order.
19 Apr 02:58
by Alka Jakhar,
Prabhat Kumar,
Akshay Moudgil,
Veerendra Dhyani,
Samaresh Das
Nanostructured platinum diselenide thin films on high‐resistivity silicon substrate are employed for optically controlled terahertz (THz) modulation. THz transmission measurements in the wide frequency range of 0.1–1 THz exhibit the modulators to reach up to 32.7% modulation depth even under low pumping power of 1 W cm−2.
Abstract
Here, an optically pumped terahertz (THz) modulator based on the novel transition metal dichalcogenide (TMD) material platinum diselenide (PtSe2) is demonstrated. The nanostructured PtSe2 thin films are formed by direct selenization of the sputtered platinum film on a high‐resistivity silicon substrate. Raman spectroscopy, scanning electron microscopy, and high‐resolution transmission electron microscopy confirm the formation of polycrystalline PtSe2 nanostructures. The transmission measurements reveal the modulation of the THz waves in the wide frequency range of 0.1–1 THz. The modulation depth of 32.7% is achieved under low pumping laser power of 1 W cm−2. The numerical analysis based on the finite difference time domain method is in good agreement with the experimentally obtained results. Further, the simulation results manifest that higher modulation depth can be achieved with the utilization of higher laser power. This work provides a path for the application of TMD materials like PtSe2 in the development of THz tunable devices such as modulators, polarizers, filters.
19 Apr 02:56
by Aday J. Molina‐Mendoza,
Matthias Paur,
Thomas Mueller
A monolayer WSe2 photodetector based on a split‐gate configuration, including a charge‐trapping layer embedded in the insulator, is demonstrated. The split‐gates allow programming the device to any desired responsivity value, and the floating gates serve to retain the preconfigured settings over long periods. Once programmed, the device operates in short‐circuit current (zero bias voltage) and without external gate‐voltages.
Abstract
Optoelectronic devices with nonvolatile memory are an important component in a wide variety of applications ranging from optoelectronic random‐access‐memories, with the advantage of using optical stimuli as an added parameter, to complex artificial neuromorphic networks that pretend to mimic the working schemes of the human brain. In the past few years, 2D materials have been proposed as attractive candidates to build such optoelectronic devices with memory due to their excellent optoelectronic properties and high sensitivity to external electric fields. Here, a WSe2 monolayer p–n junction working as a nonvolatile programmable photodetector is reported, that, enabled by a split‐gate configuration with embedded charge‐trapping layers, is capable of retaining custom responsivity values over time, prior configuration by the user. Once configured, this photodetector can operate without external applied bias voltage as a self‐driven photodetector, as well as without external back‐gate voltage thanks to the charge stored in the floating gates. Furthermore, the device shows a remarkable performance, with open‐circuit voltage around 1 V at approximately 270 W m−2 white light, fill factor higher than 30%, and fast response times. This programmable photodetector sets a new concept as a building block in more complex image‐sensing systems.
19 Apr 02:56
by Yunxia Wang,
Feng Ren,
Tao Ding
A facile and robust plasmonic coloring system based on Ag+ ion implantation shows brilliant plasmonic colors across the visible. Under the protection of the quartz glass, the deformation of Ag NPs during laser writing can be well‐controlled so that the plasmonic color generation is very reproducible and stable over long time, which has significant applications in displays, decorations, data storage, and anti‐counterfeiting.
Abstract
Brilliant plasmonic colors with long‐standing stability are generated via laser direct writing. This plasmonic coloring system is made of silver nanoparticles (Ag NPs) layer embedded in the quartz glass formed by ion implantation. The laser‐induced plasmonic heating merges the small Ag NPs into larger ones, which modifies the plasmon resonances. The plasmon resonances can be further tuned via changing the irradiation time and power, which shows scattering colors ranging from red to green and cyan. By scanning the laser across the Ag NPs layer, sophisticated plasmonic patterns and images with high resolution (≈105 DPI) can be obtained and preserved over long time (several months). This plasmonic coloring system via laser printing is facile, cost‐effective, accurate, and highly stable with rich hue, compared to other plasmonic color systems, which bears significant potentials for industrial applications such as optics, displays, decorations, data storage, and anti‐counterfeiting.
19 Apr 02:54
by Pengfei Yang†‡#, Shuqing Zhang§#, Shuangyuan Pan†‡#, Bin Tang?, Yu Liang?, Xiaoxu Zhao¶, Zhepeng Zhang†‡, Jianping Shi†‡, Yahuan Huan†‡, Yuping Shi†‡, Stephen John Pennycook¶, Zefeng Ren?, Guanhua Zhang?, Qing Chen*?, Xiaolong Zou*§, Zhongfan Liu†, and Yanfeng Zhang*†‡
ACS Nano
DOI: 10.1021/acsnano.0c01478
19 Apr 02:53
by Xudong Wang†#, Jieling Tan†#, Chengqian Han†#, Jiang-Jing Wang*†, Lu Lu‡, Hongchu Du§, Chun-Lin Jia‡§, Volker L. Deringer*?, Jian Zhou†, and Wei Zhang*†?
ACS Nano
DOI: 10.1021/acsnano.9b10057
19 Apr 02:52
by Ali Hossain Khan†‡, Guillaume H. V. Bertrand‡?, Ayelet Teitelboim§?, Chandra Sekhar M.†, Anatolii Polovitsyn‡, Rosaria Brescia‡, Josep Planelles?, Juan Ignacio Climente*?, Dan Oron*§, and Iwan Moreels*†‡
ACS Nano
DOI: 10.1021/acsnano.9b09147
19 Apr 02:52
by Tsung-Han Tsai†, Zheng-Yong Liang†, Yung-Chang Lin‡, Cheng-Chieh Wang†, Kuang-I Lin§, Kazu Suenaga‡, and Po-Wen Chiu*†?
ACS Nano
DOI: 10.1021/acsnano.0c00098
19 Apr 02:49
by Beng Hau Tan†, Jun Zhang‡, Jing Jin‡, Chin Hong Ooi‡, Yi He§, Renwu Zhou?, Kostya Ostrikov?, Nam-Trung Nguyen*‡, and Hongjie An*‡
Nano Letters
DOI: 10.1021/acs.nanolett.0c00398
19 Apr 02:48
by Hongyuan Li†‡§, M. Iqbal Bakti Utama†§?, Sheng Wang†§, Wenyu Zhao†, Sihan Zhao†, Xiao Xiao?, Yue Jiang?, Lili Jiang†, Takashi Taniguchi#, Kenji Watanabe#, Alexander Weber-Bargioni?, Alex Zettl†§?, and Feng Wang*†§?
Nano Letters
DOI: 10.1021/acs.nanolett.9b05092
19 Apr 02:48
by Chia-Hao Lee†, Abid Khan‡#, Di Luo‡#, Tatiane P. Santos†, Chuqiao Shi†, Blanka E. Janicek†, Sangmin Kang¶, Wenjuan Zhu¶, Nahil A. Sobh§, Andre´ Schleife†??, Bryan K. Clark‡, and Pinshane Y. Huang*†?
Nano Letters
DOI: 10.1021/acs.nanolett.0c00269
19 Apr 02:42
by Jiadong Yu,
Lai Wang,
Zhibiao Hao,
Yi Luo,
Changzheng Sun,
Jian Wang,
Yanjun Han,
Bing Xiong,
Hongtao Li
Van der Waals epitaxy (vdWE) is presently the most promising strategy to obtain flexible III‐nitride (opto)electronic devices based on sp2‐bonded two‐dimensional (2D) layered materials. Recent progress in the fabrication of 2D materials, vdWE, and transfer printing of III‐nitride films based on graphene, hexagonal boron nitride, and transition metal dichalcogenides is reviewed, and key points and future perspectives are discussed.
Abstract
III‐nitride semiconductors have attracted considerable attention in recent years owing to their excellent physical properties and wide applications in solid‐state lighting, flat‐panel displays, and solar energy and power electronics. Generally, GaN‐based devices are heteroepitaxially grown on c‐plane sapphire, Si (111), or 6H‐SiC substrates. However, it is very difficult to release the GaN‐based films from such single‐crystalline substrates and transfer them onto other foreign substrates. Consequently, it is difficult to meet the ever‐increasing demand for wearable and foldable applications. On the other hand, sp2‐bonded two‐dimensional (2D) materials, which exhibit hexagonal in‐plane lattice arrangements and weakly bonded layers, can be transferred onto flexible substrates with ease. Hence, flexible III‐nitride devices can be implemented through such 2D release layers. In this progress report, the recent advances in the different strategies for the growth of III‐nitrides based on 2D materials are reviewed, with a focus on van der Waals epitaxy and transfer printing. Various attempts are presented and discussed herein, including the different kinds of 2D materials (graphene, hexagonal boron nitride, and transition metal dichalcogenides) used as release layers. Finally, current challenges and future perspectives regarding the development of flexible III‐nitride devices are discussed.
12 Apr 05:31
by Yanan Wang,
Du Xiang,
Yue Zheng,
Tao Liu,
Xin Ye,
Jing Gao,
Hang Yang,
Cheng Han,
Wei Chen
A vertical van der Waals heterostructures (vdWHs) device composed of MoS2 and MoTe2 is demonstrated. It can function as a backward tunneling diode which is attributed to the band alignment variation from type II to type III via in situ MoO3 functionalization. The modified vdWHs device also exhibits the enhanced photovoltaic and photodetecting property due to more efficient photocarrier separation.
Abstract
Heterostructures of 2D materials represent a powerful material platform that has essentially defined the technological foundation for all modern electronic and optoelectronic devices. Although most of the reported heterostructures devices exhibit extraordinary electronic and optoelectronic properties, they depend on the proper combination of selected materials, which limits the broad tunability of the devices. Herein, it is demonstrated that a vertical van der Waals heterostructures (vdWHs) device, which is composed of MoS2 and MoTe2, can function as a backward tunneling diode, photovoltaic cell, and photodetector through surface functionalization of MoO3. The realization of this backward tunneling diode is attributed to the band alignment variation from type II to type III via in situ MoO3 functionalization. Furthermore, the power conversion efficiency of this vdWHs based photovoltaic device is significantly enhanced by nearly four times, benefiting from the more efficient photocarrier separation after MoO3 decoration. The enhanced photovoltaic effect can be retained even after air exposure, revealing the excellent air stability. Meanwhile, the modified vdWHs device exhibits the photodetecting property with photocurrent responsivity of around 2 A W−1 and external quantum efficiency about 400%. This work promises surface functionalization as an effective approach to broaden the device functionality of 2D heterostructures in electronics and optoelectronics.
12 Apr 05:29
by Jae-Jin Lee†, Byeong-Cheon Kim†, Hyeon-Joon Choi†, Sangwok Bae†, Fumito Araoka*‡, and Suk-Won Choi*†
ACS Nano
DOI: 10.1021/acsnano.0c00393
12 Apr 05:29
by Li-Syuan Lu†, Guan-Hao Chen†, Hui-Yu Cheng†, Chih-Piao Chuu‡, Kuan-Cheng Lu†, Chia-Hao Chen§, Ming-Yen Lu?, Tzu-Hung Chuang§, Der-Hsin Wei§, Wei-Chen Chueh†, Wen-Bin Jian†, Ming-Yang Li‡, Yu-Ming Chang?, Lain-Jong Li*‡, and Wen-Hao Chang*†#
ACS Nano
DOI: 10.1021/acsnano.0c01139
12 Apr 05:28
by Tae In Kim, Ick-Joon Park, and Sung-Yool Choi*
Nano Letters
DOI: 10.1021/acs.nanolett.0c00735
12 Apr 05:25
by Min‐Ho Seo,
Jae‐Young Yoo,
Min‐Seung Jo,
Jun‐Bo Yoon
Recent progress in geometrically structured nanomaterials and associated devices is summarized. Advanced nanofabrication methods to fabricate unique geometrically structured nanomaterials are covered. High‐performance devices achieved through the use of geometrically structured nanomaterials are reviewed. Particular focus is given to nanosensor devices, nanoelectromechanical devices, and nanosieves, which are considered key elements for the fourth industrial revolution and future bioelectronics.
Abstract
Recently, geometrically structured nanomaterials have received great attention due to their unique physical and chemical properties, which originate from the geometric variation in such materials. Indeed, the use of various geometrically structured nanomaterials has been actively reported in enhanced‐performance devices in a wide range of applications. Recent significant progress in the development of geometrically structured nanomaterials and associated devices is summarized. First, a brief introduction of advanced nanofabrication methods that enable the fabrication of various geometrically structured nanomaterials is given, and then the performance enhancements achieved in devices utilizing these nanomaterials, namely, i) physical and gas nanosensors, ii) nanoelectromechanical devices, and iii) nanosieves are described. For the device applications, a systematic summary of their structures, working mechanisms, fabrication methods, and output performance is provided. Particular focus is given to how device performance can be enhanced through the geometric structures of the nanomaterials. Finally, perspectives on the development of novel nanomaterial structures and associated devices are presented.
05 Apr 02:16
by Chinh Tam Le†?, Jungcheol Kim‡?, Farman Ullah†, Anh Duc Nguyen†, Thao Nhi Nguyen Tran†, Tuan-Em Le§, Koo-Hyun Chung§, Hyeonsik Cheong‡, Joon I. Jang*‡, and Yong Soo Kim*†
ACS Nano
DOI: 10.1021/acsnano.9b09901
