吴晓晓

Herein, a semitransparent flexible MAPbBr₃ perovskite solar cell is demonstrated to be the roof of a greenhouse. It demonstrates a power conversion efficiency (PCE) of 7.67% with an average transmittance of ≈60% in the range of 540–760 nm.

Perovskite photovoltaics (PV) is an emerging thin-film solar energy technology that is advantageous over the currently dominant crystalline silicon PV in terms of its adjustable bandgap with sub-bandgap transparency, potential flexibility, and more rapid continuous roll-to-roll manufacturing, showing promise for unique niche applications. Herein, methylammioun lead tribromide (MAPbBr₃) is utilized in a semitransparent flexible solar cell with a transparent electrode using a sandwiched MoO₃/Au/MoO₃ (MAM) multilayer to harvest around 80% of the visible light region. Through design of the thickness of the MAM multilayer, the reflected light loss is significantly reduced, thereby improving the light transmittance in the visible light region to maximize the photosynthetic yield. The semitransparent flexible device exhibits a power conversion efficiency (PCE) of 7.67% (the highest efficiency of MAPbBr₃-based semitransparent flexible devices), and the opaque rigid MAPbBr₃ solar cell shows a PCE of 9.73% with a high open-circuit voltage of 1.629 V. Optical measurement demonstrates that the flexible cell without metal electrode shows over 77% transparency in the 540–1100 nm range, whereas the overall semitransparent cell shows an average transmittance of 60% in the 540–760 nm range, which is perfect for greenhouse vegetation to not only act as protective coverage but also provide practical output power.

Europium (Eu) doped perovskite QD glass ceramic works as perfect scintillator because of high light yield, superior transparency, and hence significantly suppressed optical crosstalk, as well as the protection of glass matrix. Eventually the record-high imaging resolution of 15.0 lp mm⁻¹ is achieved, the radiation hardness is also significantly improved.

Abstract

All-inorganic perovskite quantum dots (QDs) CsPbX₃ (X = Cl, Br, and I) have recently emerged as a new promising class of X-ray scintillators. However, the instability of perovskite QDs and the strong optical scattering of the thick opaque QD scintillator film imped it to realize high-quality and robust X-ray image. Herein, the europium (Eu) doped CsPbBr₃ QDs are in situ grown inside transparent amorphous matrix to form glass-ceramic (GC) scintillator with glass phase serving as both matrix and encapsulation for the perovskite QD scintillators. The small amount of Eu dopant optimizes the crystallization of CsPbBr₃ QDs and makes their distribution more uniform in the glass matrix, which can significantly reduce the light scattering and also enhance the photoluminescence emission of CsPbBr₃ QDs. As a result, a remarkably high spatial resolution of 15.0 lp mm⁻¹ is realized thanks to the reduced light scattering, which is so far a record resolution for perovskite scintillator based X-ray imaging, and the scintillation stability is also significantly improved compared to the bare perovskite QD scintillators. Those results provide an effective platform particularly for the emerging perovskite nanocrystal scintillators to reduce light scattering and improve radiation hardness.

Nature Energy, Published online: 03 June 2021; doi:10.1038/s41560-021-00859-w

The efficiency and stability of perovskite photovoltaic modules lag far behind those of small-area devices. By carefully engineering the composition of the perovskite layer to suppress defect formation, researchers now demonstrate mini-modules that are nearly as efficient as small-area cells with 1,000-hour stability under operation.

Nature, Published online: 02 June 2021; doi:10.1038/s41586-021-03518-y

CO2 and ultraviolet light are used to initiate the p-type doping of spiro-OMeTAD:LiTFSI films, which show enhanced efficiencies when used as hole-transporting layers in solar cells and have shorter fabrication times compared with interlayers doped using conventional methods.

A dissymmetric backbone and selenophene substitution on the central core was employed to synthesize dissymmetric A-DA′D-A NF-SMAs. Their detailed single-crystal packing were revealed successfully. The dissymmetric A-WSSe-Cl:PM6 device presented an impressive PCE of 17.51 %, which is the highest values for selenophene-based and the dissymmetric NF-SMAs in binary PSCs.

Abstract

A dissymmetric backbone and selenophene substitution on the central core was used for the synthesis of symmetric or dissymmetric A-DA′D-A type non-fullerene small molecular acceptors (NF-SMAs) with different numbers of selenophene. From S-YSS-Cl to A-WSSe-Cl and to S-WSeSe-Cl, a gradually red-shifted absorption and a gradually larger electron mobility and crystallinity in neat thin film was observed. A-WSSe-Cl and S-WSeSe-Cl exhibit stronger and tighter intermolecular π–π stacking interactions, extra S⋅⋅⋅N non-covalent intermolecular interactions from central benzothiadiazole, better ordered 3D interpenetrating charge-transfer networks in comparison with thiophene-based S-YSS-Cl. The dissymmetric A-WSSe-Cl-based device has a PCE of 17.51 %, which is the highest value for selenophene-based NF-SMAs in binary polymer solar cells. The combination of dissymmetric core and precise replacement of selenophene on the central core is effective to improve J _sc and FF without sacrificing V _oc.

A noncovalently fused-ring electron acceptor (NFREA) NoCA-5 containing two terminal side-chains (T-SCs) is reported. Introduction of T-SCs can improve molecular rigidity, which is confirmed by the smaller Stokes shift value and lower reorganization free energy. Combining noncovalent conformational locks and T-SC engineering, the NoCA-5-based device exhibits a record power conversion efficiency (PCE) of 14.82 % and a certified PCE of 14.5 %.

Abstract

Side-chain engineering is an effective strategy to regulate the solubility and packing behavior of organic materials. Recently, a unique strategy, so-called terminal side-chain (T-SC) engineering, has attracted much attention in the field of organic solar cells (OSCs), but there is a lack of deep understanding of the mechanism. Herein, a new noncovalently fused-ring electron acceptor (NFREA) containing two T-SCs (NoCA-5) was designed and synthesized. Introduction of T-SCs can enhance molecular rigidity and intermolecular π–π stacking, which is confirmed by the smaller Stokes shift value, lower reorganization free energy, and shorter π–π stacking distance in comparison to NoCA-1. Hence, the NoCA-5-based device exhibits a record power conversion efficiency (PCE) of 14.82 % in labs and a certified PCE of 14.5 %, resulting from a high electron mobility, a short charge-extraction time, a small Urbach energy (E _u), and a favorable phase separation.

Ethylenediamine (EDA) coating changes the p-type tin-lead perovskite to n-type, increases the built-in potential, and decreases the open-circuit voltage (V _oc) loss in perovskite solar cells. With Br inclusion into the lattice and passivation by EDA, the highest power conversion efficiency of 21.74% and Voc of 0.86 V is achieved using Cs_0.025FA_0.475MA_0.5Sn_0.5Pb_0.5I_2.975Br_0.025 perovskite film with a bandgap of 1.25 eV.

Abstract

Tin-lead perovskite solar cells (PSCs) show inferior power conversion efficiency (PCE) than their Pb counterparts mainly because of the higher open-circuit voltage (V _oc) loss. Here, it is revealed that the p-type surface of perovskite transforms to n-type, based on post-treatment by a Lewis base, ethylenediamine. This approach forms a graded band structure owing to the rise of the Fermi-energy level at the surface of the perovskite layer, and increases the built-in potential from 0.56 to 0.76 V, which increases the V _oc by more than 100 mV. It is demonstrated that EDA can lower the defect density (Sn⁴⁺ amount) by screening perovskite against oxygen, and by bonding with undercoordinated Sn on the surface. This study further explores the role of Br anion inclusion in the perovskite lattice from the viewpoint of reducing the lattice strain and Urbach energy. Finally, a high V _oc of 0.86 V is obtained, corresponding to a voltage deficit of 0.39 V, using a perovskite absorber with a bandgap of 1.25 eV and the highest PCE (21.74%) reported so far for Sn-Pb PSCs is achieved.

It is a challenge to directly grow anisotropic all-inorganic perovskite monocrystalline wires, due to the weak surface energy difference among the low index facets. A surface energy difference amplification strategy is developed to regulate the surface energy of growing nanostructures, and accordingly the anisotropic growth of CsPbBr₃ wires.

Abstract

It is a great challenge to directly grow super long all-inorganic perovskite monocrystalline wires due to the weak surface energy difference among the low index facets. Here, a one-pot solution process to grow the aspect ratio over 10⁵ of monocrystalline CsPbBr₃ perovskite wires (PWs) and yield up to 70% is reported. A chemical potential dependent surface energy difference amplification strategy is proposed to regulate the surface energy of growing and grown surfaces accordingly to the anisotropic growth of CsPbBr₃. The anisotropic growth of wires is derived from the regulation of anti-solvent diffusion kinetic and the mass transfer kinetic control of the metal halide salts. This experiment demonstrates a 50 times amplification of surface energy difference. As-produced PWs present a high photodetection responsivity up to 4923 A W⁻¹, external quantum efficiency exceeding 13 784%, and detectivity over 3.6 × 10¹³ Jones. This work not only reveals the mechanism of surface energy dominated anisotropic growth for CsPbBr₃ PWs, but also elucidates the important role of kinetics regulation during the growth process, which may open a new window for the low-dimensional crystal growth of ionic compounds.

Isostructural phase transition of Eu³⁺-doped CsPbCl₃ quantum dots is observed under high pressure and followed by an amorphous state evolution. The photoluminescence of Eu³⁺ ions displays an enhancement before 10.1 GPa, and preserves a relatively high intensity at 22 GPa. This work indicates that high pressure is a promising way for designing superior optoelectronic materials.

Abstract

Metal halide perovskite quantum dots (QDs) have garnered tremendous attention in optoelectronic devices owing to their excellent optical and electrical properties. However, these perovskite QDs are plagued by pressure-induced photoluminescence (PL) quenching, which greatly restricts their potential applications. Herein, the unique optical and electrical properties of Eu³⁺-doped CsPbCl₃ QDs under high pressure are reported. Intriguingly, the PL of Eu³⁺ ions displays an enhancement with pressure up to 10.1 GPa and still preserves a relatively high intensity at 22 GPa. The optical and structural analysis indicates that the sample experiences an isostructural phase transition at approximately 1.53 GPa, followed by an amorphous state evolution, which is simulated and confirmed through density functional theory calculations. The pressure-induced PL enhancement of Eu³⁺ ions can be associated with the enhanced energy transfer rate from excitonic state to Eu³⁺ ions. The photoelectric performance is enhanced by compression and can be preserved upon the release of pressure, which is attributed to the decreased defect density and increased carrier mobility induced by the high pressure. This work enriches the understanding of the high-pressure behavior of rare-earth-doped luminescent materials and proves that high pressure technique is a promising way to design and realize superior optoelectronic materials.

Asymmetry and halogenation are employed to design a fused-ring non-fullerene electron acceptor, and demonstrate the synergistic effect of tuning optoelectronic properties and enhancing molecular stacking, leading to the highest device efficiency.

Abstract

Fused-ring non-fullerene electron acceptors (NFAs) boost the power conversion efficiencies (PCEs) of organic solar cells (OSCs). Asymmetric and halogenated NFAs have drawn increasing attention in recent years due to their unique optoelectronic properties. Starting from the symmetric NFA ITCC-M, this work systematically designs and synthesizes an asymmetric counterpart ITCC-M-2F, halogenated counterpart ITCC-Cl, and asymmetric and halogenated counterpart IDTT-Cl-2F. Among these NFAs, IDTT-Cl-2F shows the shallowest lowest unoccupied molecular orbital energy level, broader absorption range, and the tightest molecular packing. As a result, when blended with the donor PBDB-T-2Cl, IDTT-Cl-2F-based OSCs yield the highest PCE of 13.3% with an open-circuit voltage of 0.96 V, short-circuit current of 19.20 mA cm^–2, and fill factor of 71.1%, which is the highest PCE of OSCs employing 2-(2-chloro-6-oxo-5,6-dihydro-4H-cyclopenta[b]thiophen-4-ylidene) malononitrile (ClIC) unit terminated NFA. The results demonstrate the synergistic effect of asymmetry and halogenation toward tuning of the optoelectronic properties of NFAs for high performance OSCs.

Herein, a critical review of perovskite quantum dot (PQD) solar cell technology is provided, showing the challenges already overcome and the upcoming tendencies for research. The advantages of obtaining perovskites as QDs and the influences of preparation techniques (synthesis and post-treatments), device architecture, and perovskite composition on the solar cells’ performances are discussed in detail.

Perovskite quantum dots (PQDs) have revolutionized the field of perovskite solar cells in recent years. Using PQDs improves the operational stability of these devices, which is one of their main drawbacks for applications. This factor has motivated an intense search for new advances, from a fundamental aspect to improved performance in devices. Therefore, the developments obtained for PQD solar cells are discussed, presenting the challenges already overcome and the upcoming tendencies for research. Thus, the fundamental aspects of halide perovskite structures are first introduced. The advantages of their preparation as quantum dots are presented as well. The advances for post-treatments (purification, passivation, and ligand exchange) are then discussed. Next, an in-depth discussion of the PQD solar cell architectures is made, highlighting both the obsolete configurations and upcoming tendencies. A more specific view of the PQD compositions is then made, including lead-free compositions and strategies for ionic substitution. Links of the photovoltaic performance are constructed with the devices’ architecture, post-treatments, and perovskite composition, providing a wide-ranging overview of these parameters for the devices’ efficiencies. Finally, the authors’ point of view about the future of PQD solar cell technology is presented, showing the main drawbacks, advantages, and opportunities for research.

Nickel oxide serves as an inexpensive and stable charge-transporting layer for perovskite solar cells (PSCs). However, its high-temperature processing limits its applicability to low-temperature-processed devices. Herein, ligand-modified NiO nanoparticles are shown to permit low-temperature (140 °C) processing into high-quality thin films using a Tesla-valve microfluidic mixer, which are suitable for developing stable and efficient PSCs.

Nickel oxide (NiO) is used as a hole-transporting layer (HTL) in perovskite solar cells (PSCs) because of its high optical transmittance, intrinsic p-type doping, and suitable valence band energy level. However, fabricating high-quality NiO films typically requires high-temperature annealing, which limits their applicability for low-temperature, printable PSCs. Herein, the need for such postprocessing steps is circumvented by coupling 4-hydroxybenzoic acid (HBA) or trimethyloxonium tetrafluoroborate (Me₃OBF₄) ligand-modified NiO nanoparticles (NPs) with a Tesla-valve microfluidic mixer to deposit high-quality NiO films at a temperature <150 °C. The NP dispersions and the resulting thin films are thoroughly characterized using a combination of optical, structural, thermal, chemical, and electrical methods. While the optical and structural properties of the ligand-exchanged NiO NPs remain comparable with those possessing the native long-chained aliphatic ligands, the ligand-modified NiO thin films exhibit dramatic reductions in surface energy and an increase in hole mobilities. These are correlated with concomitant and significant enhancements in performance and stability factors of PSCs when the ligand-modified NiO NPs are used as HTL layers within p−i−n device architectures.

The effect of interfacial properties on charge-initiated triplet sensitization in perovskite-sensitized solid-state upconversion devices is investigated. Trap-assisted triplet sensitization is demonstrated via modification of interfacial trap densities of the devices through surface treatment while monitoring the upconversion performance. Devices with more interfacial traps show brighter upconversion, highlighting the importance of interfacial control in perovskite-sensitized upconversion devices.

Abstract

Photon upconversion via triplet–triplet annihilation (TTA) has promise for overcoming the Shockley–Queisser limit for single-junction solar cells by allowing the utilization of sub-bandgap photons. Recently, bulk perovskites have been employed as sensitizers in solid-state upconversion devices to circumvent poor exciton diffusion in previous nanocrystal (NC)-sensitized devices. However, an in-depth understanding of the underlying photophysics of perovskite-sensitized triplet generation is still lacking due to the difficulty of precisely controlling interfacial properties of fully solution-processed devices. In this study, interfacial properties of upconversion devices are adjusted by a mild surface solvent treatment, specifically altering perovskite surface properties without perturbing the bulk perovskite. Thermal evaporation of the annihilator precludes further solvent contamination. Counterintuitively, devices with more interfacial traps show brighter upconversion. Approximately an order of magnitude difference in upconversion brightness is observed across different interfacial solvent treatments. Sequential charge transfer and interfacial trap-assisted triplet sensitization are demonstrated by comparing upconversion performance, transient photoluminescence dynamics, and magnetic field dependence of the devices. Incomplete triplet conversion from transferred charges and consequent triplet-charge annihilation (TCA) are also observed. The observations highlight the importance of interfacial control and provide guidance for further design and optimization of upconversion devices using perovskites or other semiconductors as sensitizers.

A “two-in-one” strategy is applied to form an acceptor alloy for fine-tuning the donor/acceptor energy alignment and blend morphology. Enhanced hole transfer and suppressed charge recombination in the alloy acceptor consisting of AQx-3 and Y6 enable a power conversion efficiency of over 18%, which is the highest documented for ternary organic solar cells utilizing two nonfullerene acceptors.

Abstract

The trade-off between the open-circuit voltage (V _oc) and short-circuit current density (J _sc) has become the core of current organic photovoltaic research, and realizing the minimum energy offsets that can guarantee effective charge generation is strongly desired for high-performance systems. Herein, a high-performance ternary solar cell with a power conversion efficiency of over 18% using a large-bandgap polymer donor, PM6, and a small-bandgap alloy acceptor containing two structurally similar nonfullerene acceptors (Y6 and AQx-3) is reported. This system can take full advantage of solar irradiation and forms a favorable morphology. By varying the ratio of the two acceptors, delicate regulation of the energy levels of the alloy acceptor is achieved, thereby affecting the charge dynamics in the devices. The optimal ternary device exhibits more efficient hole transfer and exciton separation than the PM6:AQx-3-based system and reduced energy loss compared with the PM6:Y6-based system, contributing to better performance. Such a “two-in-one” alloy strategy, which synergizes two highly compatible acceptors, provides a promising path for boosting the photovoltaic performance of devices.

The involvement of guanidinium in perovskite bulk film and CH₃O-PEABr passivation on the perovskite surface synergistically suppresses the trap states. The charge carrier lifetimes of perovskite films increase by tenfold and fivefold to 981 ns and 8.02 µs at the crystal surface and in its bulk, respectively. The decreased nonradiative recombination loss translates to a record efficiency of 40.1%.

Abstract

Perovskite solar cells exhibit not only high efficiency under full AM1.5 sunlight, but also have great potential for applications in low-light environments, such as indoors, cloudy conditions, early morning, late evening, etc. Unfortunately, their performance still suffers from severe trap-induced nonradiative recombination, particularly under low-light conditions. Here, a holistic passivation strategy is developed to reduce traps both on the surface and in the bulk of micrometer-thick perovskite film, leading to a record efficiency of 40.1% under 301.6 µW cm⁻² warm light-emitting diode (LED) light for low-light solar-cell applications. The involvement of guanidinium into the perovskite bulk film and 2-(4-methoxyphenyl)ethylamine hydrobromide (CH₃O-PEABr) passivation on the perovskite surface synergistically suppresses the trap states. The charge carrier lifetimes of the perovskite film increase by tenfold and fivefold to 981 ns and 8.02 µs at the crystal surface and in its bulk, respectively. The decreased nonradiative recombination loss translates to a high open-circuit voltage (V _oc) of 1.00 V, a high short-circuit current (J _sc) of 152.10 µA cm⁻², and a fill factor (FF) of 79.52%. Note that this performance also stands as the highest among all photovoltaics measured under indoor light illumination. This work of trap passivation for micrometer-thick perovskite film paves a way for high-performance, self-powered IoT devices.

An overview of recent progress on emerging Pb-free semiconductors containing lone-pair ns² cations is provided, with the purpose of providing valid insights for discovering auspicious optoelectronic materials other than lead halide perovskites. The issues hindering performance enhancement and the design strategies of novel ns²-cation-based optoelectronic semiconductors are discussed.

Abstract

Lead halide perovskites have emerged in the last decade as advantageous high-performance optoelectronic semiconductors, and have undergone rapid development for diverse applications such as solar cells, light-emitting diodes , and photodetectors. While material instability and lead toxicity are still major concerns hindering their commercialization, they offer promising prospects and design principles for developing promising optoelectronic materials. The distinguished optoelectronic properties of lead halide perovskites stem from the Pb²⁺ cation with a lone-pair 6s² electronic configuration embedded in a mixed covalent–ionic bonding lattice. Herein, we summarize alternative Pb-free semiconductors containing lone-pair ns² cations, intending to offer insights for developing potential optoelectronic materials other than lead halide perovskites. We start with the physical underpinning of how the ns² cations within the material lattice allow for superior optoelectronic properties. We then review the emerging Pb-free semiconductors containing ns² cations in terms of structural dimensionality, which is crucial for optoelectronic performance. For each category of materials, the research progresses on crystal structures, electronic/optical properties, device applications, and recent efforts for performance enhancements are overviewed. Finally, the issues hindering the further developments of studied materials are surveyed along with possible strategies to overcome them, which also provides an outlook on the future research in this field.

Interfaces provide reactive zones and interphases stabilize electronic device operation. Understanding and designing interfaces and interphases represents an effective and efficient way for developing high-performance rechargeable batteries and perovskite solar cells.

Abstract

The ever-increasing demand for clean sustainable energy has driven tremendous worldwide investment in the design and exploration of new active materials for energy conversion and energy-storage devices. Tailoring the surfaces of and interfaces between different materials is one of the surest and best studied paths to enable high-energy-density batteries and high-efficiency solar cells. Metal-halide perovskite solar cells (PSCs) are one of the most promising photovoltaic materials due to their unprecedented development, with their record power conversion efficiency (PCE) rocketing beyond 25% in less than 10 years. Such progress is achieved largely through the control of crystallinity and surface/interface defects. Rechargeable batteries (RBs) reversibly convert electrical and chemical potential energy through redox reactions at the interfaces between the electrodes and electrolyte. The (electro)chemical and optoelectronic compatibility between active components are essential design considerations to optimize power conversion and energy storage performance. A focused discussion and critical analysis on the formation and functions of the interfaces and interphases of the active materials in these devices is provided, and prospective strategies used to overcome current challenges are described. These strategies revolve around manipulating the chemical compositions, defects, stability, and passivation of the various interfaces of RBs and PSCs.

The encapsulated core–multishell structure with an architecture of substrate/reduced graphene oxide (rGO)/bimetallic complex/rGO/bimetallic complex/rGO is used to fabricate robust and high energy density electrodes for lithium/sodium storage, with a high proportion of active material (20 wt%) and mechanical strength. The underlying synergistic effect of bimetal ions is revealed via experimental investigations and theoretical calculations.

Abstract

Developing flexible electrodes with high active materials loading and excellent mechanical stability is of importance to flexible electronics, yet remains challenging. Herein, robust flexible electrodes with an encapsulated core-multishell structure are developed via a spraying-hydrothermal process. The multilayer electrode possesses an architecture of substrate/reduced graphene oxide (rGO)/bimetallic complex/rGO/bimetallic complex/rGO from the inside to the outside, where the cellulosic fibers serve as the substrate, namely, the core; and the multiple layers of rGO and bimetallic complex, are used as active materials, namely, the shells. The inner two rGO interlayers function as the cement that chemically bind to two adjacent layers, while the two outer rGO layers encapsulate the inside structure effectively protecting the electrode from materials detachment or electrolyte corrosion. The electrodes with a unique core-multishell structure exhibit excellent cycle stability and exceptional temperature tolerance (−25 to 40 °C) for lithium and sodium storage. A combination of experimental and theoretical investigations are carried out to gain insights into the synergetic effects of cobalt-molybdenum-sulfide (CMS) materials (the bimetallic complex), which will provide guidance for future exploration of bimetallic sulfides. This strategy is further demonstrated in other substrates, showing general applicability and great potential in the development of flexible energy storage devices.

An aggregation-induced emission (AIE)-featured organic ligand TTPy-NH₂ is rationally designed and successfully utilized for sensitizing quasi-2D-perovskites (PVK). The fabricated TTPY-NH₂/PVK film exhibits as high as 62.2% of quantum yield, unique dual-emissions, and high stability, making it potential in fabricating high-performance perovskite-based white light-emitting diodes.

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Abstract

In order to endow quasi-2D organic-inorganic hybrid metal halide perovskites (quasi-2D-PVK) with superior performance, an aromatic organic ligand with aggregation-induced emission (AIE) features is rationally designed and utilized for constructing distinctive quasi-2D-PVK materials. This AIE-active ligand, TTPy-NH₂, well fits into the lattices of quasi-2D-PVK and leaves hydrophobic tails surrounding PVK layers, making the presented TTPy-NH₂/PVK film extraordinary in terms of both luminescence and stability. Benefiting from the prominent sensitization function and AIE tendency of TTPy-NH₂, the presented TTPy-NH₂/PVK film exhibits a high quantum yield of 62.2%, unique blue-red dual-emission property of both blue and red, high stability with the remnant of more than 94% fluorescence intensity remnant after 21 days. As a result, TTPy-NH₂/PVK film is capable of constituting high-performance white light-emitting diodes, with its color gamut reaching 138% of the National Television System Committee （NTSC） standard and the maximum efficiency is 105 lm W⁻¹ at 20 mA. Evidently, a win-win effect is achieved by the integration of AIE-active ligands and quasi-2D-PVK, which are two of the most reputable solid-state luminogens. This developed protocol thus opens up a new avenue for exploring the next generation of luminescent devices.