Mahui

2D/3D perovskite heterostructures or composites have recently been recognized as efficient strategy to improve the stability of perovskite solar cells. In this work, we demonstrated a novel solution process to develop 2D/3D perovskites with modulated diffusion passivation by introducing phenylethylammonium iodide (PEAI) and N,N‐dimethylformamide (DMF) additive, which could effectively enhance device performance and long‐term stability. Compared with conventional device, the device with PEAI and DMF solvent additive treatment exhibited enhanced charge transport, improved charge extraction and suppressed non‐radiative carrier recombination. The solar cells with an optimal 2D/3D perovskite passivation treatment exhibited an extremely high fill factor of 83.6% and an average power conversion efficiency of 21.4% (21.3% by using integrated photocurrent from IPCE spectra) based on NiO_x hole transport layer. Furthermore, the unencapsulated device exhibited excellent stability under continuously simulated sunlight illumination and outstanding air stability after 1000 h storage under ambient air condition.

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In article no. 1900125, Guokun Ma, Hao Wang, and co‐workers use liquid crystal (LC) molecule (4'‐heptyl‐4‐biphenylcarbonitrile) as a binding agent to connect the grain boundaries of perovskites. After treatment with the LC, perovskite crystal growth orientation can be controlled and the electron transport process is accelerated. Remarkably, the LC greatly contributes to the environmental stability of the devices.

In article no. 1900087, Jian‐Qiang Liu, Xiao‐Tao Hao, and co‐workers introduce polypropylene into a bulk heterojunction consisting of donors and acceptors to fabricate effective organic solar cells with a thick active layer. The incorporation of polypropylene improves the crystallinity of the donor and reduces the aggregation size of the acceptor, which facilitates exciton dissociation and charge transition and inhibits the recombination of carriers.

In article no. 1900192, Ai Ping Chen, Shuang Yang, Yu Hou, and co‐workers employ a versatile alkaline earth metals doping strategy to engineer the electronic structure of NiO_x contacts for inverted planar perovskite solar cells, in which the champion device demonstrates a power conversion efficiency of 19.49% with a high open circuit voltage of 1.14 V. Alkaline earth metals doping can significantly optimize the electrical properties by deepening the valence band maximum and enhancing the hole conductivity.

Black phosphorus quantum dots (BPQDs)‐assisted growth of a perovskite film is reported. Serving as heterogeneous nucleation centers, the BPQDs assist in the crystallization of the perovskite film, achieving perovskite films with higher crystallinity and less defects. Consequently, the perovskite solar cells made with BPQDs achieve a maximum power conversion efficiency of 20% and an encouraging improved thermal stability.

Crystallinity and trap‐state density of a perovskite film play a critical role in the performance of corresponding perovskite solar cells (PVSCs). Herein, liquid‐phase‐exfoliated black phosphorus quantum dots (BPQDs) are incorporated into the perovskite precursor solution as additives to direct the formation of the perovskite film, i.e., methylammonium lead iodide (MAPbI₃). It is found that the perovskite films made with BPQDs have higher crystallinity and less nonradiative detects compared with the pristine ones, leading to longer carrier lifetime and higher carrier collection efficiency. Time‐of‐flight secondary‐ion mass spectra and surface density calculation of BPQDs reveal that the improvement of the perovskite film quality may be related to the heterogeneous nucleation of the perovskite film at the BPQDs. PVSCs using MAPbI₃ films made with BPQDs achieve a maximum power conversion efficiency of 20.0% and an encouraging thermal stability of T ₈₀ = 100 h at 100 °C. Both values are remarkably higher than the devices with pristine perovskite films. Therefore, this work demonstrates the potential of the 2D materials quantum dots‐assisted growth method for high‐performance PVSCs.

Propane‐1,3‐diammonium cations are first adopted to construct cesium–formamidinium (Cs–FA) perovskite solar cells (PSCs) with an efficiency of 18.1% and much enhanced device stability, and the opposing effects induced by the diammonium cation are resolved.

Incorporating diammonium cations, which electrostatically connect the adjacent inorganic slabs ([PbI₆]⁴⁻), into 3D perovskite is recently proposed to develop high‐performance perovskite solar cells (PSCs). However, due to limited studies, the effects of these organic cations on the perovskite structural and optoelectronic properties are yet to be understood. Herein, a diammonium cation, propane‐1,3‐diammonium (PDA), is first proposed to modulate the cesium–formamidinium (Cs–FA)‐mixed cation perovskite. By increasing the PDA content, the efficiency of the Cs_0.15FA_{0.85 − x} PDA _x PbI₃ PSC first increases and then drastically decreases. The highest power conversion efficiency (PCE) of 18.10% obtained by Cs_0.15FA_0.83PDA_0.02PbI₃ is superior to that of the Cs_0.15FA_0.85PbI₃ (16.82%). Through systematic investigations, it is revealed that the PDA content–dependent efficiency is attributed to a competition between the enhanced defect passivation and emerged excitonic effect with an increased PDA content. Moreover, the encapsulated Cs_0.15FA_0.83PDA_0.02PbI₃ device exhibits almost 1.5 times increased stability than the Cs_0.15FA_0.85PbI₃ counterpart, with 83% of its initial efficiency retained after 500 h exposure, under continuous light soaking at 60 °C in ambient air. This study provides a practical strategy to enhance the device stability without sacrificing the efficiency and deepens our understanding on effects of diammonium cation incorporated in 3D perovskite.

A polymer solar cell (PSC) with a large active area of 216 cm² and high power conversion efficiency of 7.7% is presented, involving a nonfullerene acceptor and the solution‐processable ZrOx interfacial layer made by blade coating. This represents the highest reported efficiency for PSCs with an active area more than 10 cm². More encouragingly, the large‐area PSC shows good long‐term thermal stability as well.

A polymer solar cell involving a nonfullerene acceptor is made by blade coating. In the ternary bulk‐heterojunction layer, the donor is poly[(2,6‐(4,8‐bis(5‐(2‐ethylhexyl)thiophen‐2‐yl)benzo[1,2‐b:4,5‐b’]dithiophene))‐co‐(1,3‐di(5‐thiophene‐2‐yl)‐ 5,7‐bis(2‐ethylhexyl)benzo[1,2‐c:4,5‐c’]dithiophene‐4,8‐dione)] (PBDB‐T) and the acceptor is a mixture of 3,9‐bis(2‐methylene‐(3‐(1,1‐dicyanomethylene)‐indanone))‐5,5,11,11‐tetrakis(4‐hexylphenyl)‐dithieno[2,3‐d:2’,3’‐d’]‐s‐indaceno[1,2‐b:5,6‐b’]dithiophene) (ITIC) and [6,6]‐phenyl C₇₁‐butyric acid methyl ester (PC₇₁BM). The device structure is an indium tin oxide (ITO)‐coated glass substrate/PEDOT:PSS/ternary active layer/interfacial layer/Al. For a small active area of 0.04 cm², the best power conversion efficiency is 9.8% with the LiF interfacial layer. For a large active area of 216 cm², the best efficiency is 7.7% with the ZrOx interfacial layer. After annealing at 85 °C for 30 days, the large‐area device keeps 75% of the initial efficiency. The efficiency of 4.9% is achieved for a large‐area semi‐transparent device.

A versatile alkaline earth metals doping strategy is utilized to engineer the electronic structure of NiO _x contacts for inverted planar perovskite solar cells, which demonstrates a power conversion efficiency of 19.49% with a high open‐circuit voltage of 1.14 V. Enhanced charge extraction and conductivity are responsible for the high‐performance devices.

Organometallic halide perovskite solar cells (PSCs) are rapidly evolving as the promising photovoltaic technologies with high record efficiency over 24%. The inorganic p‐type semiconductor NiO _x is extensively used as important hole transport layers for the realization of stable and hysteresis‐free solar cells due to their good electronic properties, facile fabrication, and excellent chemical endurance. However, the critical issues of NiO _x films including poor intrinsic conductivity and mismatched band alignment limit further improvement of the device performance. Herein, it is demonstrated that a versatile alkaline earth metal (Mg, Ca, Sr, and Ba) doping strategy can effectively engineer the electronic properties of NiO _x contacts in inverted planar PSCs. Alkaline earth metal doping can deepen valence band maximum and enhance the hole conductivity of NiO _x films, which better aligns the energy band in solar cells. The champion device based on Sr‐doped NiO _x films attains a power conversion efficiency of 19.49% with a high open‐circuit voltage (V _OC) of 1.14 V for NiO _x ‐based CH₃NH₃PbI₃ devices. The resulted device shows negligible hysteresis and high stability as well. This finding provides a systematic doping strategy to further improve the performance of inverted planar PSCs.

Herein, the open‐circuit voltage losses and bias‐dependent photo‐ and electroluminescence of high‐performance 2D/3D perovskite solar cells, which exhibit outstanding optoelectronic properties, are investigated. These are state‐of‐the‐art photovoltaic devices. Results suggest that by reducing nonradiative recombination processes in the absorber, the power conversion efficiency of the studied photovoltaic devices can be improved.

Herein, the optoelectronic properties of interface‐engineered perovskite 2D|3D‐heterojunction structure solar cells are reported. The reciprocity theorem is applied to determine the maximum open‐circuit voltage (V _oc) the device can deliver under solar illumination. A V _oc of 1.295 V is found, analyzing the measured external quantum efficiency and assuming only radiative recombination. For comparison, the experimental open‐circuit voltage found for the studied 2D|3D heterojunctions is 1.15 V. The contribution of nonradiative recombination is explored by measuring the electroluminescence quantum yield. A quantum yield of 0.4% is found at current densities equivalent to 1 sun illumination. This translates into a V _oc loss of ≈140 mV, which is in very good agreement with the experimental findings. In addition, the fundamental correlation between luminescence intensity and the chemical potential predicted by the generalized Planck law is confirmed for the photoluminescence measured at different light intensities when the device is operated under open‐circuit conditions and for the electroluminescence when operated under a forward bias. The investigations in this study suggest that further efficiency improvements can be achieved by reducing the nonradiative recombination in the studied solar cell. At the same time, a high‐performance near IR light emitting diode can be realized.

A liquid crystal (LC) molecule (4′‐heptyl‐4‐biphenylcarbonitrile) is first used as a “binding agent” to connect grain boundaries of perovskite. The crystal orientation of perovskite grains is controlled and the electron transport process is accelerated after treating with LC; these are reflected by the significant improvement in power conversion efficiency and high fill factor. Remarkably, the LC greatly contributes to the humid‐stability of perovskite solar cells.

Hybrid perovskites have rapidly emerged as highly promising optoelectronic materials for perovskite solar cells (PSCs), whereas solution‐processed perovskite films usually contain a large amount of grain‐boundary network, which is unbeneficial for efficient film function, including charge transport and environmental stability. Herein, a liquid crystal (LC) molecule is first used as a “binding agent” to connect grains and fill grain boundaries of perovskite. The LC molecule (4′‐heptyl‐4‐biphenylcarbonitrile) interacts with PbI₂ to control the crystal orientation for fine and oriented perovskite grains, which accelerates electron transport and enhances environmental stability. Consequently, compared with the pristine devices, the power conversion efficiency of the LC‐based device increases from 17.14% to 20.19% with a high fill factor (over 80%). Remarkably, the LC‐based PSCs retain 92% of their initial efficiency at 25 °C, and a relative humidity of 70% after 500 h, whereas the control samples are almost degraded completely under the same conditions.

Incorporation of a small amount of benzo[1,2‐c:4,5‐c]dithiophene‐4,8‐dione (BDD) block into the alkylsilyl functionalized copolymer by random copolymerization provides a beneficial trade‐off that the slightly reduced periodic sequence promotes the compatibility with an acceptor, whereas the introduction of planar units allows a preferred face‐on orientation with enhanced π–π stacking of the random copolymer to facilitate charge transfer.

Herein, an alkylsilyl functionalized alternative (D‐A1) copolymer with high crystallization property as the polymer matrix and planar [1,2‐c:4,5‐c]dithiophene‐4,8‐dione (BDD) block as the second acceptor unit (A2) are selected to construct two D‐A1‐D‐A2 type random copolymers PBDT‐TZ‐BDD‐1/19 and PBDT‐TZ‐BDD‐1/9. It is found that incorporation of a small amount of BDD block into the alkylsilyl functionalized copolymer by random copolymerization can effectively manipulate the energy levels, light absorption, molecular packing and the photovoltaic properties when blended with ITIC (indacenodithieno[3,2‐b]thiophene (IT) as the central donor unit and 2‐ (3‐oxo‐2,3‐dihydroinden‐1‐ylidene)malononitrile (IC) as end groups). More importantly, random copolymerization provides a beneficial trade‐off that the slightly reduced periodic sequence promotes the compatibility with the acceptor, whereas introduction of planar BDD units allows a preferred face‐on orientation with enhanced π–π stacking of the random copolymer to facilitate the charge transfer. As a result, the random copolymer PBDT‐TZ‐BDD‐1/19 delivers a significantly higher power conversion efficiency (11.02%) than the alternative binary copolymer counterpart together with the remarkably improved short circuit current and fill factor. These results demonstrate that random polymerization of a small amount of planar units into the highly crystalline polymer matrix is a promising strategy to develop high‐performance polymer solar cells.

The fabrication of efficient organic solar cells (OSCs) via the combination of one‐step doctor‐blade printing and solvent vapor annealing (SVA) is reported for the first time. SVA improves the spontaneous stratification of the interlayer between the active layer and electrode. The achieved efficiency of 11.14% is among the highest reported to date for doctor‐blade‐coated OSCs.

A pronounced enhancement of the power conversion efficiency (PCE) by 38% is achieved in one‐step doctor‐blade printing organic solar cells (OSCs) via a simple solvent vapor annealing (SVA) step. The organic blend composed of a donor polymer, a nonfullerene acceptor, and an interfacial layer (IL) molecular component is found to phase‐separate vertically when exposed to a solvent vapor‐saturated atmosphere. Remarkably, the spontaneous formation of a fine, self‐organized IL between the bulk heterojunction (BHJ) layer and the indium tin oxide (ITO) electrode facilitated by SVA yields solar cells with a significantly higher PCE (11.14%) than in control devices (8.05%) without SVA and in devices (10.06%) made with the more complex two‐step doctor‐blade printing method. The stratified nature of the ITO/IL/BHJ/cathode is corroborated by a range of complementary characterization techniques including surface energy, cross‐sectional scanning electron microscopy, grazing incidence wide angle X‐ray scattering, and X‐ray photoelectron spectroscopy. This study demonstrates that a spontaneously formed IL with SVA treatment combines simplicity and precision with high device performance, thus making it attractive for large‐area manufacturing of next‐generation OSCs.

Pb(SCN)₂ functions at the grain boundaries and pinholes to in situ polish the perovskite film surface. A 425 nm‐thick CsPbI₂Br film with high crystalline, smooth, and uniform surface morphology is obtained, with an efficiency of 10.44% for a low cost and stable carbon‐based perovskite solar cell processed under low‐temperature (150 °C).

Improvement in stability and an economical processing technique are the main aspects of the commercialization of perovskite solar cells (PSCs). In this study, a 425 nm‐thick CsPbI₂Br film with a high crystalline, smooth, and uniform surface morphology is obtained by Pb(SCN)₂ passivating the grain boundaries under low temperature (150 °C). The results of a series of electrochemical analyses, including space‐charge‐limited‐current (SCLC), open‐circuit voltage decay (OCVD), electrical impedance spectroscopy (EIS), intensity‐modulated photocurrent spectroscopy (IMPS), and intensity‐modulated photovoltage spectroscopy (IMVS), demonstrate that the trap density of the CsPbI₂Br film is greatly reduced with Pb(SCN)₂, which effectively inhibits the interface recombination and promotes charge transport in CsPbI₂Br PSC. Efficiencies of 12.22% and 10.44% are achieved for low‐temperature‐processed CsPbI₂Br planar‐architecture PSCs with ITO/SnO₂/CsPbI₂Br/ poly(3‐hexylthiophene) (P3HT)/Ag and ITO/SnO₂/CsPbI₂Br/carbon, respectively. This low‐cost, high‐efficiency carbon‐based inorganic PSC shows potential industrial application, especially for tandem solar cells.

An ingenious surface chlorination treatment method is used to passivate the interface defects of perovskite/zinc oxide (ZnO), which effectively reduces the interface charge recombination loss and improves the poor interface chemical characteristics. Thus, the fabricated zinc oxide–chlorine (ZnO–Cl)‐based device achieves an enhanced efficiency and suppressed hysteresis, as well as strengthened stability in perovskite solar cells.

Defect states on the zinc oxide (ZnO) surface cause severe interfacial charge recombination and perovskite decomposition during device operation, which inevitably leads to efficiency loss and poor device stability, making the usage of ZnO in perovskite solar cells (PSCs) problematic. Herein, a simple and effective method of inorganic chlorination treatment is used to passivate the surface defects of the ZnO electron transport layer. It is shown that chlorine (Cl) effectively fills the oxygen vacancy defects of ZnO, suppressing charge recombination and facilitating charge transport at the perovskite/ZnO interface. Therefore, the resulting CH₃NH₃PbI₃‐based device achieves an enhanced power conversion efficiency with suppressed hysteresis. Meanwhile, the chlorination of the ZnO surface protects the perovskite layer from decomposition, thus improving device stability. Herein, an ingenious method is developed to further improve the device performance of ZnO‐based PSCs and useful guidance is provided for the development of other perovskite optoelectronics, especially those with ZnO as the charge transport layer.

Diboron‐treated SnO₂ exhibits some Sn³⁺ species, which serve as electron donors with more n‐type nature, resulting in the higher Fermi level on the surface of SnO₂, promoting electron extraction and reducing carrier recombination in the electron transport layer (ETL)/perovskite interface. A power‐conversion efficiency of 22.04% is obtained in an n‐i‐p structure perovskite solar cell.

Energy‐level modulation between perovskite and carrier transport layers to obtain a promoted carrier extraction and reduced charge recombination is an effective way to achieve high‐efficiency perovskite solar cells. Here, diboron is used as an effective interfacial modifier between SnO₂ and perovskite. By taking advantage of the higher Fermi level on the surface of SnO₂ after diboron treatment, a power‐conversion efficiency of 22.04% in a solar cell device based on two‐step solution‐processed planar n‐i‐p structure is obtained. With the help of thorough characterizations, it is argued that the diboron‐treated SnO₂ exhibits some Sn³⁺ species, which serve as electron donors with a more n‐type nature, promoting electron extraction and reducing carrier recombination in the electron transport layer (ETL)/perovskite interface. Further analysis speculates that the formation of surface diboron–oxygen Lewis pair induces a reducing state of diboron complexes, resulting in the spontaneous electron redistribution and the formation of Sn³⁺−O^–• species. This provides an effective chemical approach to tune the energy alignment between the oxide ETL and absorber.

A comprehensive theoretical analysis of two‐terminal and four‐terminal perovskite/copper indium gallium selenide (CIGS) tandem solar cells is investigated from optical and electrical aspects. According to different optical absorptions, the current matching points of different halide components are obtained. Under the condition of current matching, an optimal performance up to 31.13% can be obtained by using two‐terminal CH₃NH₃PbI₂Br/CIGS tandem structure.

Perovskite/copper indium gallium selenide (CIGS) tandem solar cells represent an attractive configuration to obtain ultrahigh efficiency. A detailed theoretical analysis is crucial for further improving the performance of tandem solar cells. Herein, four‐terminal and two‐terminal perovskite/CIGS tandem solar cells are intensively researched. For four‐terminal perovskite/CIGS tandem solar cell, the optimal thicknesses of CH₃NH₃PbI₃ and CIGS are 0.5 and 3 μm, respectively, according to the simulation result. Reducing the thickness of TiO₂ and Spiro‐OMeTAD can minimize the short‐wavelength parasitic absorption and long‐wavelength parasitic absorption, respectively. Meanwhile, using antireflection coating, such as 100 nm MgF₂, is beneficial to increase the photon absorption. For two‐terminal perovskite/CIGS tandem solar cells, the thicknesses of perovskite and CIGS are tuned to meet the current matching. To further improve the efficiency of two‐terminal tandem cells, FTO thickness is reduced to minimize reflection, and the optimal doping concentration of CIGS (1 × 10¹⁸ cm⁻³) is used. In addition, results show that the quality of perovskite films should be improved by enlarging the grain size to decrease the trap states at grain boundary. Finally, the optimal efficiency of two‐terminal CH₃NH₃PbI₂Br/CIGS tandem solar cells reaches 31.13%.

Perovskite solar cells are very promising for their high efficiency and solution‐process feasibility. Herein, some fabrication methods for gaining a high‐quality perovskite layer with long‐term stability are reviewed. These approaches significantly enhance the stability of perovskites, which makes it applicable for commercialization. However, these methods have some issues and it still leaves much room for further optimization.

Organic–inorganic hybrid perovskites (OIHPs) are one of the hottest fields on account of their immense potential for photovoltaics. As one of the most promising OIHPs, formamidinium (FA)‐based perovskites have been developed very fast in the past few years. The power conversion efficiency (PCE) has reached certified 24.2%, which is comparable with that of monocrystalline silicon solar cells. However, the easy formation of nonperovskite δ‐phase formamidinium lead triiodide (FAPbI₃) at a low temperature needs to be solved when fabricating a high‐quality light absorber layer. Several strategies have been used to avoid the formation of δ‐phase FAPbI₃ and improve phase stability in recent years such as tolerance factor adjustment, dimensional engineering, addictive processing, interfacial modification, defects passivation, and in situ growth. These approaches can enhance the phase stability to some extent; however, their contribution to long‐term stability and especially their real mechanism is still unknown. Herein, the relationships among the tolerance factors, the structure of FAPbI₃, and the phase transition phenomenon are summarized. In addition, various methodologies and potential mechanisms for stabilizing α‐phase FAPbI₃ at room temperature (RT) are discussed. In conclusion, a series of challenges in the popular processings of perovskite solar cells and their corresponding solutions that help achieve commercialization faster are summarized.

Vacuum‐deposited methylammonium lead iodide can adopt a perovskite structure with a stable cubic lattice at room temperature. Reducing the metallic salt evaporation rate leads to a tetragonal phase structure. This room‐temperature cubic perovskite circumvents the tetragonal to cubic phase transition resulting at ≈55 °C, and leads to photovoltaic devices with efficiencies above 19%.

Abstract

Methylammonium lead triiodide (MAPI) has emerged as a high‐performance photovoltaic material. Common understanding is that at room temperature, it adopts a tetragonal phase and it only converts to the perfect cubic phase around 50–60 °C. Most MAPI films are prepared using a solution‐based coating process, yet they can also be obtained by vapor‐phase deposition methods. Vapor‐phase‐processed MAPI films have significantly different characteristics than their solvent‐processed analogous, such as relatively small crystal‐grain sizes and short excited‐state lifetimes. However, solar cells based on vapor‐phase‐processed MAPI films exhibit high power‐conversion efficiencies. Surprisingly, after detailed characterization it is found that the vapor‐phase‐processed MAPI films adopt a cubic crystal structure at room temperature that is stable for weeks, even in ambient atmosphere. Furthermore, it is demonstrated that by tuning the deposition rates of both precursors during codeposition it is possible to vary the perovskite phase from cubic to tetragonal at room temperature. These findings challenge the common belief that MAPI is only stable in the tetragonal phase at room temperature.

The photochemistry of halide‐related defects affects the optoelectronic properties of lead–halide perovskite semiconductors and their reactivity to external stimuli such as light and environmental molecules.

Abstract

The presence of various types of chemical interactions in metal‐halide perovskite semiconductors gives them a characteristic “soft” fluctuating structure, prone to a wide set of defects. Understanding of the nature of defects and their photochemistry is summarized, which leverages the cooperative action of density functional theory investigations and accurate experimental design. This knowledge is used to describe how defect activity determines the macroscopic properties of the material and related devices. Finally, a discussion of the open questions provides a path towards achieving an educated prediction of device operation, necessary to engineer reliable devices.

A general approach for lab‐to‐manufacturing translation is developed to achieve high‐performance flexible organic solar modules without obvious efficiency loss. The shear impulse during the coating/printing process is applied to control the morphology evolution of the bulk heterojunction layer for both fullerene and nonfullerene acceptor systems. A quantitative transformation factor of shear impulse between slot‐die printing and spin‐coating is detected.

Abstract

The blossoming of organic solar cells (OSCs) has triggered enormous commercial applications, due to their high‐efficiency, light weight, and flexibility. However, the lab‐to‐manufacturing translation of the praisable performance from lab‐scale devices to industrial‐scale modules is still the Achilles' heel of OSCs. In fact, it is urgent to explore the mechanism of morphological evolution in the bulk heterojunction (BHJ) with different coating/printing methods. Here, a general approach to upscale flexible organic photovoltaics to module scale without obvious efficiency loss is demonstrated. The shear impulse during the coating/printing process is first applied to control the morphology evolution of the BHJ layer for both fullerene and nonfullerene acceptor systems. A quantitative transformation factor of shear impulse between slot‐die printing and spin‐coating is detected. Compelling results of morphological evolution, molecular stacking, and coarse‐grained molecular simulation verify the validity of the impulse translation. Accordingly, the efficiency of flexible devices via slot‐die printing achieves 9.10% for PTB7‐Th:PC₇₁BM and 9.77% for PBDB‐T:ITIC based on 1.04 cm² . Furthermore, 15 cm² flexible modules with effective efficiency up to 7.58% (PTB7‐Th:PC₇₁BM) and 8.90% (PBDB‐T:ITIC) are demonstrated with satisfying mechanical flexibility and operating stability. More importantly, this work outlines the shear impulse translation for organic printing electronics.

Photocurrent–voltage hysteresis in perovskite solar cells (PSCs) induced by ion migration combined with nonradiative recombination near the interface depends on perovskite composition and device structure. Among the methods used in the attempt to reduce the hysteresis, potassium‐ion doping is found to be a universal approach toward hysteresis‐free PSCs regardless of perovskite composition.

Abstract

Current‐density–voltage (J–V) hysteresis in perovskite solar cells (PSCs) is a critical issue because it is related to power conversion efficiency and stability. Although parameters affecting the hysteresis have been already reported and reviewed, little investigation is reported on scan‐direction‐dependent J–V curves depending on perovskite composition. This review investigates J–V hysteric behaviors depending on perovskite composition in normal mesoscopic and planar structure. In addition, methodologies toward hysteresis‐free PSCs are proposed. There is a specific trend in hysteresis in terms of J–V curve shape depending on composition. Ion migration combined with nonradiative recombination near interfaces plays a critical role in generating hysteresis. Interfacial engineering is found to be an effective method to reduce the hysteresis; however, bulk defect engineering is the most promising method to remove the hysteresis. Among the studied methods, KI doping is proved to be a universal approach toward hysteresis‐free PSCs regardless of perovskite composition. It is proposed from the current studies that engineering of perovskite film near the electron transporting layer (ETL) and the hole transporting layer (HTL) is of vital importance for achieving hysteresis‐free PSCs and extremely high efficiency.

Technologies to enhance the stability of quantum dots (QDs), quantum dot films, and quantum dot light‐emitting diodes for display applications are summarized and suggested. Degradation mechanisms of QDs are discussed in aspects of water, oxygen, and thermal energy. Various technologies to maintain the quantum yield of QDs, the photoluminescence intensity of QD films, and the lifetime of quantum dot light‐emitting diodes are discussed.

Abstract

Quantum dots (QDs) are being highlighted in display applications for their excellent optical properties, including tunable bandgaps, narrow emission bandwidth, and high efficiency. However, issues with their stability must be overcome to achieve the next level of development. QDs are utilized in display applications for their photoluminescence (PL) and electroluminescence. The PL characteristics of QDs are applied to display or lighting applications in the form of color‐conversion QD films, and the electroluminescence of QDs is utilized in quantum dot light‐emitting diodes (QLEDs). Studies on the stability of QDs and QD devices in display applications are reviewed herein. QDs can be degraded by oxygen, water, thermal heating, and UV exposure. Various approaches have been developed to protect QDs from degradation by controlling the composition of their shells and ligands. Phosphorescent QDs have been protected by bulky ligands, physical incorporation in polymer matrices, and covalent bonding with polymer matrices. The stability of electroluminescent QLEDs can be enhanced by using inorganic charge transport layers and by improving charge balance. As understanding of the degradation mechanisms of QDs increases and more stable QDs and display devices are developed, QDs are expected to play critical roles in advanced display applications.

Nature Photonics, Published online: 19 August 2019; doi:10.1038/s41566-019-0505-4

Publication date: November 2019

Source: Nano Energy, Volume 65

Author(s): Kaiyu Yang, Fushan Li, Hailong Hu, Tailiang Guo, Tae Whan Kim

Graphical abstract

Publication date: November 2019

Source: Nano Energy, Volume 65

Author(s): Dae Hun Kim, Na Hyun Park, Tae Whan Kim

Graphical abstract