shuhui

Hysteresis in the dark, attributable to bias induced degradation of the p‐type interface, is investigated and eliminated in NiO‐based inverted perovskite solar cells. Enhanced stability to forward bias is obtained with the introduction of a low‐temperature hybrid magnesium‐based interlayer.

Abstract

In perovskite solar cells (PSCs), the interfaces are a weak link with respect to degradation. Electrochemical reactivity of the perovskite's halides has been reported for both molecular and polymeric hole selective layers (HSLs), and here it is shown that also NiO brings about this decomposition mechanism. Employing NiO as an HSL in p–i–n PSCs with power conversion efficiency (PCE) of 16.8%, noncapacitive hysteresis is found in the dark, which is attributable to the bias‐induced degradation of perovskite/NiO interface. The possibility of electrochemically decoupling NiO from the perovskite via the introduction of a buffer layer is explored. Employing a hybrid magnesium‐organic interlayer, the noncapacitive hysteresis is entirely suppressed and the device's electrical stability is improved. At the same time, the PCE is improved up to 18% thanks to reduced interfacial charge recombination, which enables more efficient hole collection resulting in higher V _oc and FF.

Cores and effect: Dithieno[3,2‐b:2′,3′‐d]pyrrole cored p‐type semiconductors are developed as dopant‐free hole‐transport materials for perovskite solar cells with an efficiency surpassing 20 %. The modification via π‐conjugation extension and N‐alkylation fine‐tunes the HOMO energy levels, hole mobility, solubility, and film‐forming characteristics.

Abstract

Organic p‐type semiconductors with tunable structures offer great opportunities for hybrid perovskite solar cells (PVSCs). We report herein two dithieno[3,2‐b:2′,3′‐d]pyrrole (DTP) cored molecular semiconductors prepared through π‐conjugation extension and an N‐alkylation strategy. The as‐prepared conjugated molecules exhibit a highest occupied molecular orbital (HOMO) level of −4.82 eV and a hole mobility up to 2.16×10⁻⁴ cm² V⁻¹ s⁻¹. Together with excellent film‐forming and over 99 % photoluminescence quenching efficiency on perovskite, the DTP based semiconductors work efficiently as hole‐transporting materials (HTMs) for n‐i‐p structured PVSCs. Their dopant‐free MA_0.7FA_0.3PbI_2.85Br_0.15 devices exhibit a power conversion efficiency over 20 %, representing one of the highest values for un‐doped molecular HTMs based PVSCs. This work demonstrates the great potential of using a DTP core in designing efficient semiconductors for dopant‐free PVSCs.

Interface engineering is widely recognized as an effective strategy to improve the efficiency and stability of perovskite solar cells. This review is intended to provide a deep understanding of interface design principles for highly efficient and stable perovskite photovoltaic devices and a timely overview for state‐of‐the‐art interfacial materials in this rapidly developing field.

Exceptionally high efficiencies for organic–inorganic hybrid perovskite solar cells (PSCs) have been achieved. However, their operational stability still needs to be improved. The intrinsic instability of halide perovskites caused by the presence of volatile organic cations, as well as the degradation of hybrid perovskites induced by the adverse permeation of environmental water (H₂O)/oxygen (O₂) and the undesired ion diffusion or migration are the major reasons. Beyond strengthening perovskites themselves, interface engineering is now regarded as a valid strategy to prolong device lifetime by preventing the undesired degradation pathways. This comprehensive review highlights the utilization of practical interface engineering for enhancing the efficiency and stability of organic–inorganic lead halide PSCs. First, the impacts of interface design on the energy‐level alignment and carrier dynamics are overviewed. Second, recent progresses on the development of interfacial materials for simultaneously achieving high efficiency and stability of PSCs are summarized. At last, the interfacial layer design principles along with future outlook of this rapidly developing field are discussed.

The large grains and high crystallinity of Pb(Ac)₂‐doped α‐CsPbI₂Br active layers with CsBr passivation is realized by a two‐step annealing process. The corresponding planar all‐inorganic CsPbI₂Br perovskite solar cells exhibit a long‐term ultrahigh power conversion efficiency of 16.37%, with a substantially improved V _OC of 1.271 V.

All‐inorganic CsPbI₂Br perovskite has attracted increasing attention, owing to its outstanding thermal stability and suitable bandgap for optoelectronic devices. However, the substandard power conversion efficiency (PCE) and large energy loss (E _loss) of CsPbI₂Br perovskite solar cells (PSCs) caused by the low quality and high trap density of perovskite films still limit the application of devices. Herein, the post‐treatment of evaporating cesium bromide (CsBr) is utilized on top of the perovskite surface to passivate the CsPbI₂Br–hole‐transporting layer interface and reduce E _loss. The results of microzone photoluminescence indicate that the evaporated CsBr gathered at the grain boundaries of CsPbI₂Br layers and Br‐enriched perovskites (CsPbI _x Br_3−x , x < 2) are formed, which can provide protection for CsPbI₂Br. Therefore, the gaps between crystal grains are filled up, and the recombination loss of the all‐inorganic CsPbI₂Br PSCs is reduced accordingly. The champion device exhibits high open‐circuit voltage and a PCE of 1.271 V and 16.37%, respectively. This is the highest reported PCE among all‐inorganic CsPbI₂Br PSCs reported so far. In addition, the stability of CsPbI₂Br PSCs is effectively improved by CsBr passivation, and the device without encapsulation can retain 86% of its initial PCE after 1368 h of storage, which is beneficial for practical applications.

A systematic study of structurally similar fullerene derivatives shows that even minor modifications in their structure have a strong impact on their performance as electron transport layer (ETL) materials for perovskite solar cells. The best ETL significantly improves ambient stability of the devices for >800 h presumably due to an optimal size/shape of the solubilizing addend enabling compact molecular packing.

It is known that the operation lifetime of perovskite solar cells can be extended by orders of magnitude if properly selected hole‐transport and electron transport layers provide good isolation for the perovskite absorber preventing evaporation of volatile species (e.g., photoinduced) from the active layer and blocking the diffusion of aggressive moisture and oxygen from the surrounding environment. Herein, a systematic study of a family of structurally similar fullerene derivatives as electron transport layer (ETL) materials for p‐i‐n perovskite solar cells is presented. It is shown that even minor modifications of the molecular structure of the fullerene derivatives have a strong impact on their electrical performance and, particularly, ambient stability of the devices. Indeed, an optimally functionalized fullerene derivative applied as an ETL enables stable operation of perovskite solar cells when exposed to air for >800 h, which is manifested in retention of 90% of the original photovoltaic performance. In contrast, the reference devices with phenyl‐C₆₁‐butyric acid methyl ester as the ETL degraded almost completely within less than 100 h of air exposure. Most probably, the side chains of the best‐performing fullerene ETL materials are filling the gaps between the carbon spheres, thus preventing the diffusion of oxygen and moisture inside the device.

Nature, Published online: 10 July 2019; doi:10.1038/s41586-019-1357-2

Two novel donor–acceptor‐type hole‐transporting materials are developed and characterized. Due to the good energy level alignment, appropriate hole‐transporting ability, and most importantly, the excellent film morphology, the MPA‐BTTI‐based dopant‐free inverted perovskite solar cell exhibits a remarkable power conversion efficiency of 21.17% with negligible hysteresis and long‐time operational stability.

Abstract

Hole‐transporting materials (HTMs) play a critical role in realizing efficient and stable perovskite solar cells (PVSCs). Considering their capability of enabling PVSCs with good device reproducibility and long‐term stability, high‐performance dopant‐free small‐molecule HTMs (SM‐HTMs) are greatly desired. However, such dopant‐free SM‐HTMs are highly elusive, limiting the current record efficiencies of inverted PVSCs to around 19%. Here, two novel donor–acceptor‐type SM‐HTMs (MPA‐BTI and MPA‐BTTI) are devised, which synergistically integrate several design principles for high‐performance HTMs, and exhibit comparable optoelectronic properties but distinct molecular configuration and film properties. Consequently, the dopant‐free MPA‐BTTI‐based inverted PVSCs achieve a remarkable efficiency of 21.17% with negligible hysteresis and superior thermal stability and long‐term stability under illumination, which breaks the long‐time standing bottleneck in the development of dopant‐free SM‐HTMs for highly efficient inverted PVSCs. Such a breakthrough is attributed to the well‐aligned energy levels, appropriate hole mobility, and most importantly, the excellent film morphology of the MPA‐BTTI. The results underscore the effectiveness of the design tactics, providing a new avenue for developing high‐performance dopant‐free SM‐HTMs in PVSCs.

Ternary polymer solar cells are successfully developed by combining a fullerene derivative and a nonfullerene material as acceptors. The introduction of PC₆₁BM into the PBDB‐TF:Y6 blend effectively improves the charge transport properties and reduces the nonradiative energy loss. Ultimately, the main photovoltaic parameters are simultaneously enhanced in the ternary devices, leading to an outstanding efficiency of 16.5% (certificated as 16.2%).

Abstract

Recent advances in the material design and synthesis of nonfullerene acceptors (NFAs) have revealed a new landscape for polymer solar cells (PSCs) and have boosted the power conversion efficiencies (PCEs) to over 15%. Further improvements of the photovoltaic performance are a significant challenge in NFA‐PSCs based on binary donor:acceptor blends. In this study, ternary PSCs are fabricated by incorporating a fullerene derivative, PC₆₁BM, into a combination of a polymer donor (PBDB‐TF) and a fused‐ring NFA (Y6) and a very high PCE of 16.5% (certified as 16.2%) is recorded. Detailed studies suggest that the loading of PC₆₁BM into the PBDB‐TF:Y6 blend can not only enhance the electron mobility but also can increase the electroluminescence quantum efficiency, leading to balanced charge transport and reduced nonradiative energy losses simultaneously. This work suggests that utilizing the complementary advantages of fullerene and NFAs is a promising way to finely tune the detailed photovoltaic parameters and further improve the PCEs of PSCs.

Perovskite solar cells are very promising for their high efficiency and solution‐process feasibility. Herein, some fabrication methods for gaining a high‐quality perovskite layer with long‐term stability are reviewed. These approaches significantly enhance the stability of perovskites, which makes it applicable for commercialization. However, these methods have some issues and it still leaves much room for further optimization.

Organic–inorganic hybrid perovskites (OIHPs) are one of the hottest fields on account of their immense potential for photovoltaics. As one of the most promising OIHPs, formamidinium (FA)‐based perovskites have been developed very fast in the past few years. The power conversion efficiency (PCE) has reached certified 24.2%, which is comparable with that of monocrystalline silicon solar cells. However, the easy formation of nonperovskite δ‐phase formamidinium lead triiodide (FAPbI₃) at a low temperature needs to be solved when fabricating a high‐quality light absorber layer. Several strategies have been used to avoid the formation of δ‐phase FAPbI₃ and improve phase stability in recent years such as tolerance factor adjustment, dimensional engineering, addictive processing, interfacial modification, defects passivation, and in situ growth. These approaches can enhance the phase stability to some extent; however, their contribution to long‐term stability and especially their real mechanism is still unknown. Herein, the relationships among the tolerance factors, the structure of FAPbI₃, and the phase transition phenomenon are summarized. In addition, various methodologies and potential mechanisms for stabilizing α‐phase FAPbI₃ at room temperature (RT) are discussed. In conclusion, a series of challenges in the popular processings of perovskite solar cells and their corresponding solutions that help achieve commercialization faster are summarized.

Spiro‐OMeTAD(TFSI)₂ is successfully employed in the fabrication of highly efficient n–i–p perovskite solar cells as a p‐dopant in the absence of lithium bis(trifluoromethane)sulfonimide (LiTFSI) and air exposure. With this approach, the proportion of [spiro‐OMeTAD]⁺ is precisely controlled, and the spiro‐OMeTAD(TFSI)₂‐doped devices show a remarkably improved long‐term stability and well‐retained hole‐transporting material (HTM) morphology after aging for 300 h.

Abstract

To date, the most efficient perovskite solar cells (PSCs) employ an n–i–p device architecture that uses a 2,2′,7,7′‐tetrakis(N,N‐di‐p‐methoxyphenyl‐amine)‐9,9′‐spirobifluorene (spiro‐OMeTAD) hole‐transporting material (HTM), which achieves optimum conductivity with the addition of lithium bis(trifluoromethane)sulfonimide (LiTFSI) and air exposure. However, this additive along with its oxidation process leads to poor reproducibility and is detrimental to stability. Herein, a dicationic salt spiro‐OMeTAD(TFSI)₂, is employed as an effective p‐dopant to achieve power conversion efficiencies of 19.3% and 18.3% (apertures of 0.16 and 1.00 cm²) with excellent reproducibility in the absence of LiTFSI and air exposure. As far as it is known, these are the highest‐performing n–i–p PSCs without LiTFSI or air exposure. Comprehensive analysis demonstrates that precise control of the proportion of [spiro‐OMeTAD]⁺ directly provides high conductivity in HTM films with low series resistance, fast hole extraction, and lower interfacial charge recombination. Moreover, the spiro‐OMeTAD(TFSI)₂‐doped devices show improved stability, benefitting from well‐retained HTM morphology without forming aggregates or voids when tested under an ambient atmosphere. A facile approach is presented to fabricate highly efficient PSCs by replacing LiTFSI with spiro‐OMeTAD(TFSI)₂. Furthermore, this study provides an insight into the relationship between device performance and the HTM doping level.

A comprehensive analytical model capable of quantifying bimolecular, bulk and surface trap‐assisted contributions to the overall nongeminate recombination losses in organic solar cells is reported. Common techniques such as light intensity‐dependent current density–voltage characteristics, capacitance spectroscopy, and open‐circuit voltage decay yield the necessary experimental data to successfully apply this analytical model.

Abstract

In this study, a comprehensive analytical model to quantify the total nongeminate recombination losses, originating from bimolecular as well as bulk and surface trap‐assisted recombination mechanisms in nonfullerene‐based bulk heterojunction organic solar cells is developed. This proposed model is successfully employed to obtain the different contributions to the recombination current of the investigated solar cells under different illumination intensities. Additionally, the model quantitatively describes the experimentally measured open‐circuit voltage versus light intensity dependence. Most importantly, it is possible to calculate the experimental results with the same fitting parameter values from the presented model. The validity of this model is also proven by a combination of other independent, steady‐state, and transient experimental techniques. This new powerful analytical tool will enable researchers in the photovoltaic community to take into account the synergetic contribution from all relevant types of nongeminate recombination losses in different optoelectronic systems and target their analysis of recombination dynamics at any operating voltage.

A new dopant‐free hole transport material DTP‐C6Th is developed for efficient planar n‐i‐p perovskite solar cells. The champion power conversion efficiency (PCE) reaches 21.04% after careful device engineering with poly(methyl methacrylate) passivation and composition tuning of perovskite. The DTP‐C6Th‐based devices without encapsulation show no PCE drop in the glovebox and retain over 85% of the initial PCE in air after storage for 60 days.

Abstract

Dopant‐free hole transport materials (HTMs) are essential for commercialization of perovskite solar cells (PSCs). However, power conversion efficiencies (PCEs) of the state‐of‐the‐art PSCs with small molecule dopant‐free HTMs are below 20%. Herein, a simple dithieno[3,2‐b:2′,3′‐d]pyrrol‐cored small molecule, DTP‐C6Th, is reported as a promising dopant‐free HTM. Compared with commonly used spiro‐OMeTAD, DTP‐C6Th exhibits a similar energy level, a better hole mobility of 4.18 × 10⁻⁴ cm² V⁻¹ s⁻¹, and more efficient hole extraction, enabling efficient and stable PSCs with a dopant‐free HTM. With the addition of an ultrathin poly(methyl methacrylate) passivation layer and properly tuning the composition of the perovskite absorber layer, a champion PCE of 21.04% is achieved, which is the highest value for small molecule dopant‐free HTM based PSCs to date. Additionally, PSCs using the DTP‐C6Th HTM exhibit significantly improved long‐term stability compared with the conventional cells with the metal additive doped spiro‐OMeTAD HTM. Therefore, this work provides a new candidate and effective device engineering strategy for achieving high PCEs with dopant‐free HTMs.

Publication date: September 2019

Source: Nano Energy, Volume 63

Author(s): Jinhua Gao, Ruijie Ming, Qiaoshi An, Xiaoling Ma, Miao Zhang, Jianli Miao, Jianxiao Wang, Chuluo Yang, Fujun Zhang

Graphical abstract

Ternary organic solar cells with 13.16% efficiency by recombining the advantages of used materials and the corresponding binary OSCs.

Publication date: September 2019

Source: Nano Energy, Volume 63

Author(s): Xing-Juan Ma, Xiang-Dong Zhu, Kai-Li Wang, Femi Igbari, Yi Yuan, Yue Zhang, Chun-Hong Gao, Zuo-Quan Jiang, Zhao-Kui Wang, Liang-Sheng Liao

Graphical abstract

Nature Communications, Published online: 08 July 2019; doi:10.1038/s41467-019-10985-5

The impact of light on the stability of perovskite solar cells (PSCs) is comprehensively investigated. Elevated device temperature and excess charge carriers are the driving forces for defect formation and PSC device degradation under illumination, not the photovoltage or strain. Cooling the device and operating at maximum power point can improve PSC stability.

Abstract

With power conversion efficiencies now reaching 24.2%, the major factor limiting efficient electricity generation using perovskite solar cells (PSCs) is their long‐term stability. In particular, PSCs have demonstrated rapid degradation under illumination, the driving mechanism of which is yet to be understood. It is shown that elevated device temperature coupled with excess charge carriers due to constant illumination is the dominant force in the rapid degradation of encapsulated perovskite solar cells under illumination. Cooling the device to 20 °C and operating at the maximum power point improves the stability of CH₃NH₃PbI₃ solar cells over 100× compared to operation under open circuit conditions at 60 °C. Light‐induced strain originating from photothermal‐induced expansion is also observed in CH₃NH₃PbI₃, which excludes other light‐induced‐strain mechanisms. However, strain and electric field do not appear to play any role in the initial rapid degradation of CH₃NH₃PbI₃ solar cells under illumination. It is revealed that the formation of additional recombination centers in PSCs facilitated by elevated temperature and excess charge carriers ultimately results in rapid light‐induced degradation. Guidance on the best methods for measuring the stability of PSCs is also given.