Ligang Yuan

The p-type inorganic semiconductor CuGaO₂ as a hole-transporting layer (HTL) in perovskite solar cells (PSCs) provides higher carrier mobility, better-energy level matching, and superior stability, as well as low-temperature processing technique. Compared to organic HTL, a very competitive PCE of 18.51% with long-term stability is achieved. This indicates that CuGaO₂ is a promising HTL for efficient and stable PSCs.

The third generation of photovoltaic technology aims to reduce the fabrication cost and improve the power conversion efficiency (PCE) of solar cells. Singlet fission (SF), an efficient multiple exciton generation (MEG) process in organic semiconductors, is one promising way to surpass the Shockley-Queisser limit of conventional single-junction solar cells. Traditionally, this MEG process has been observed as an intermolecular process in organic materials. The implementation of intermolecular SF in photovoltaic devices has achieved an external quantum efficiency of over 100% and demonstrated significant promise for boosting the PCE of third generation solar cells. More recently, efficient intramolecular SF has been reported. Intramolecular SF materials are modular and have the potential to overcome certain design constraints that intermolecular SF materials possess, which may allow for more facile integration into devices.

Singlet fission (SF), a multiple exciton generation process in organic semiconductors, is one promising way to overcome the Shockley–Queisser limit for the power conversion efficiency (PCE) of photovoltaic solar cells. Recent achievements in engineering intermolecular SF-based photovoltaic devices and prospects of recently developed intramolecular SF materials as active layers in future devices are highlighted.

Alternative low-temperature solution-processed hole-transporting materials (HTMs) without dopant are critical for highly efficient perovskite solar cells (PSCs). Here, two novel small molecule HTMs with linear π-conjugated structure, 4,4′-bis(4-(di-p-toyl)aminostyryl)biphenyl (TPASBP) and 1,4′-bis(4-(di-p-toyl)aminostyryl)benzene (TPASB), are applied as hole-transporting layer (HTL) by low-temperature (sub-100 °C) solution-processed method in p-i-n PSCs. Compared with standard poly(3,4-ethylenedioxythiophene): poly(styrenesulfonic acid) (PEDOT:PSS) HTL, both TPASBP and TPASB HTLs can promote the growth of perovskite (CH₃NH₃PbI₃) film consisting of large grains and less grain boundaries. Furthermore, the hole extraction at HTL/CH₃NH₃PbI₃ interface and the hole transport in HTL are also more efficient under the conditions of using TPASBP or TPASB as HTL. Hence, the photovoltaic performance of the PSCs is dramatically enhanced, leading to the high efficiencies of 17.4% and 17.6% for the PSCs using TPASBP and TPASB as HTL, respectively, which are ≈40% higher than that of the standard PSC using PEDOT:PSS HTL.

Two novel small molecular materials are explored as the hole-transporting layer in p-i-n perovskite solar cells (PSCs), yielding high efficiencies of 17.4% and 17.6%, respectively, which are ≈40% higher than the standard PSCs.