Nature Electronics, Published online: 06 June 2022; doi:10.1038/s41928-022-00769-z
Transistors based on two-dimensional semiconductors suffer from electrical instabilities because charges readily get trapped in the gate oxides. As charge trapping is sensitive to the energetic alignment of the channel Fermi level to the defect bands in the oxide, the number of electrically active traps can be reduced by tuning the channel Fermi level.jinzhitong
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Enhancing the electrical stability of two-dimensional transistors
[ASAP] On-Demand Generation of Peroxynitrite from an Integrated Two-Dimensional System for Enhanced Tumor Therapy

[ASAP] 2D Monolayers for Superior Transparent Electromagnetic Interference Shielding

[ASAP] Structural Integrity Preserving and Residue-Free Transfer of Large-Area Wrinkled Graphene onto Polymeric Substrates

Cascade of isospin phase transitions in Bernal-stacked bilayer graphene at zero magnetic field
Nature Physics, Published online: 02 June 2022; doi:10.1038/s41567-022-01616-w
The flat portions of the band structure in bilayer graphene are shown to support interaction-driven symmetry-broken states, similar to moiré heterostructures.[ASAP] Layer-Dependent Interlayer Antiferromagnetic Spin Reorientation in Air-Stable Semiconductor CrSBr

Carbon nanobelts do the twist
Nature Synthesis, Published online: 30 May 2022; doi:10.1038/s44160-022-00083-8
Using a bottom-up synthetic method, an all sp2-hybridized carbon nanobelt with a Möbius topology is prepared. The macrocyclization step is a Wittig reaction between an aldehyde and phosphorous ylide at opposite edges of a strip that induces a twist.Dual-Scale Stick-Slip Friction on $\text{Graphene}/h\text{−}\mathrm{BN}$ Moiré Superlattice Structure
Author(s): Shuai Zhang, Quanzhou Yao, Lingxiu Chen, Chengxin Jiang, Tianbao Ma, Haomin Wang, Xi-Qiao Feng, and Qunyang Li
Using atomic force microscopy, we have shown that friction on graphene/h−BN superlattice structures may exhibit unusual moiré-scale stick slip in addition to the regular ones observed at the atomic scale. Such dual-scale slip instability will lead to unique length-scale dependent energy dissipation …
[Phys. Rev. Lett. 128, 226101] Published Thu Jun 02, 2022
Contacts in 2D
Nature Electronics, Published online: 27 May 2022; doi:10.1038/s41928-022-00783-1
Methods to create van der Waals contacts between two-dimensional semiconductors and three-dimensional metals are helping to unleash the potential of two-dimensional devices.Two-dimensional materials stack up
Nature Electronics, Published online: 27 May 2022; doi:10.1038/s41928-022-00780-4
Two-dimensional materials stack upTowards zero-power 6G communication switches using atomic sheets
Nature Electronics, Published online: 30 May 2022; doi:10.1038/s41928-022-00767-1
A solid-state electronic switch based on an atomic sheet of molybdenum disulfide is demonstrated in the 6G communication band with very high speed data transmission.Monolayer molybdenum disulfide switches for 6G communication systems
Nature Electronics, Published online: 30 May 2022; doi:10.1038/s41928-022-00766-2
Non-volatile analogue switches made from molybdenum disulfide can operate at frequencies of 480 GHz and achieve data transmission rates of 100 Gbit s–1, making them of potential use in sixth-generation communication technology.Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning
Nature Electronics, Published online: 02 June 2022; doi:10.1038/s41928-022-00768-0
The stability of graphene-based field-effect transistors with amorphous aluminium oxide serving as the top-gate oxide can be improved by tuning the Fermilevel of the two-dimensional channel material such that it maximizes the energy distance between the charge carriers in the channel and the defect bands in the gate oxide.[ASAP] Multiwavelength Optoelectronic Synapse with 2D Materials for Mixed-Color Pattern Recognition

[ASAP] Magnetic Order, Electrical Doping, and Charge-State Coupling at Amphoteric Defect Sites in Mn-Doped 2D Semiconductors

[ASAP] High-Density, Localized Quantum Emitters in Strained 2D Semiconductors

[ASAP] Emergent Topological Hall Effect from Exchange Coupling in Ferromagnetic Cr2Te3/Noncoplanar Antiferromagnetic Cr2Se3 Bilayers

[ASAP] Controlling Stoichiometry in Ultrathin van der Waals Films: PtTe2, Pt2Te3, Pt3Te4, and Pt2Te2

Spontaneous-polarization-induced photovoltaic effect in rhombohedrally stacked MoS2
Nature Photonics, Published online: 26 May 2022; doi:10.1038/s41566-022-01008-9
It is shown that rhombohedral stacked MoS2 can enable scalable photovoltaic effects induced by spontaneous polarization throughout few-micrometre-sized exfoliated flakes. This is exploited in a graphene–MoS2-based photovoltaic device.Room-temperature electrically switchable spin–valley coupling in a van der Waals ferroelectric halide perovskite with persistent spin helix
Nature Photonics, Published online: 02 June 2022; doi:10.1038/s41566-022-01016-9
Researchers demonstrate a persistent spin helix in an organic–inorganic hybrid ferroelectric halide perovskite whose layered nature makes it intrinsically like a quantum well. They demonstrate a switchable spin-polarized band structure via an intrinsic ferroelectric field.Author Correction: Monolayer mosaic heterostructures
Nature Nanotechnology, Published online: 31 May 2022; doi:10.1038/s41565-022-01156-7
Author Correction: Monolayer mosaic heterostructuresSuperior radiation tolerance via reversible disordering–ordering transition of coherent superlattices
Nature Materials, Published online: 30 May 2022; doi:10.1038/s41563-022-01260-y
The cycling disordering–ordering transition of low-misfit superlattice nanoprecipitates in metallic materials continuously annihilates radiation defects via a short-range atom-reshuffling process, giving rise to high radiation tolerance.Bi-state switch in moiré stacking
Nature Materials, Published online: 31 May 2022; doi:10.1038/s41563-022-01253-x
Twisted monolayer–multilayer graphene superlattices present bi-stable reconstruction states, with reversible switch in-between and long-distance propagation triggered by local mechanical perturbation. This provides additional degrees of freedom for moiré engineering.Multilayer 2D insulator shows promise for post-silicon electronics
Nature, Published online: 01 June 2022; doi:10.1038/d41586-022-01476-7
A method has been developed for fabricating thin films of the 2D insulator hexagonal boron nitride with a uniform crystal orientation. The advance makes this material a key contender for replacing silica substrates in future electronics.Epitaxial single-crystal hexagonal boron nitride multilayers on Ni (111)
Nature, Published online: 01 June 2022; doi:10.1038/s41586-022-04745-7
Using a chemical vapour deposition method, it is possible to epitaxially grow wafer-scale single-crystal trilayers of hexagonal boron nitride—an important dielectric for 2D materials—on Ni (111) foils by boron dissolution.Intermediate-state imaging of electrical switching and quantum coupling of molybdenum disulfide monolayer
[ASAP] Viscous Solvent-Assisted Planetary Ball Milling for the Scalable Production of Large Ultrathin Two-Dimensional Materials

[ASAP] Spontaneous and Selective Potassium Transport through a Suspended Tailor-Cut Ti3C2Tx MXene Film

[ASAP] Laser-Driven One- and Two-Dimensional Subwavelength Periodic Patterning of Thin Films Made of a Metal–Organic MoS2 Precursor

Molecular ‘Möbius strip’ gives carbon a twist
Nature, Published online: 25 May 2022; doi:10.1038/d41586-022-01450-3
An iconic rotated structure is created from hexagons of carbon atoms.