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17 Oct 01:24

High output mode-locked laser empowered by defect regulation in 2D Bi2O2Se saturable absorber

by Junting Liu

Nature Communications, Published online: 05 July 2022; doi:10.1038/s41467-022-31606-8

Bi2O2Se holds potential for the realization of 2D optical modulators due to its broadband nonlinear response, air stability and carrier mobility. Here, the authors report the realization of defect-engineered Bi2O2Se nanoplates as saturable absorbers for femtosecond solid-state lasers, showing improved output power and pulse duration.
08 Aug 01:20

[ASAP] Twist Angle-Dependent Molecular Intercalation and Sheet Resistance in Bilayer Graphene

by Yuji Araki, Pablo Solís-Fernández, Yung-Chang Lin, Amane Motoyama, Kenji Kawahara, Mina Maruyama⧧, Yanlin Gao⧧, Rika Matsumoto, Kazu Suenaga, Susumu Okada⧧, and Hiroki Ago

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ACS Nano
DOI: 10.1021/acsnano.2c03997
08 Aug 01:19

[ASAP] Direct-Chemical Vapor Deposition-Enabled Graphene for Emerging Energy Storage: Versatility, Essentiality, and Possibility

by Zixiong Shi, Haina Ci, Xianzhong Yang, Zhongfan Liu, and Jingyu Sun

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ACS Nano
DOI: 10.1021/acsnano.2c05745
08 Aug 01:16

Tunable spin injection and detection across a van der Waals interface

by Keun-Hong Min

Nature Materials, Published online: 04 August 2022; doi:10.1038/s41563-022-01320-3

The authors investigate tunnelling magnetoresistance in Fe3GeTe2/hBN(WSe2)/Fe3GeTe2 magnetic tunnel junctions and report strong variations with bias including polarization reversals.
03 Aug 01:32

Wafer-scale transfer of tungsten disulfide

by Katharina Zeissler

Nature Electronics, Published online: 26 July 2022; doi:10.1038/s41928-022-00818-7

Wafer-scale transfer of tungsten disulfide
03 Aug 01:32

A laser-assisted chlorination process for reversible writing of doping patterns in graphene

by Yoonsoo Rho

Nature Electronics, Published online: 01 August 2022; doi:10.1038/s41928-022-00801-2

Two laser beams with different energies and configurations can be used to reversibly dope graphene via chlorination and chlorine removal, allowing rewritable graphene photodetectors to be fabricated.
03 Aug 01:32

A laser-based chemical process enables reversible doping of graphene

Nature Electronics, Published online: 02 August 2022; doi:10.1038/s41928-022-00802-1

Laser-assisted chemical reactions have been used to write reversible ultra-high-density doping patterns in graphene for optoelectronic applications. The approach used two laser beams with specific photon energies and geometric configurations to enable local doping with a high dopant coverage ratio on graphene, while preserving the electronic properties of the surface.
03 Aug 01:29

[ASAP] The Hidden Flower in WS2 Flakes: A Combined Nanomechanical and Tip-Enhanced Raman Exploration

by Joachim Jelken, María O. Avilés, and François Lagugné-Labarthet

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ACS Nano
DOI: 10.1021/acsnano.2c03441
03 Aug 01:28

[ASAP] Nonlinear Optical Activities in Two-Dimensional Gallium Sulfide: A Comprehensive Study

by Safayet Ahmed, Ping Kwong Cheng, Junpeng Qiao, Wei Gao, Ahmed Mortuza Saleque, Md. Nahian Al Subri Ivan, Ting Wang, Tawsif Ibne Alam, Sumaiya Umme Hani, Zong Liang Guo, Siu Fung Yu, and Yuen Hong Tsang

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ACS Nano
DOI: 10.1021/acsnano.2c03566
03 Aug 01:27

[ASAP] Nonlocal Manipulation of Magnetism in an Itinerant Two-Dimensional Ferromagnet

by Hongwei Dai, Menghao Cai, Qinghua Hao, Qingbo Liu, Yuntong Xing, Hongjing Chen, Xiaodie Chen, Xia Wang, Hua-Hua Fu, and Junbo Han

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ACS Nano
DOI: 10.1021/acsnano.2c03626
03 Aug 01:25

[ASAP] SiP Nanosheets: A Metal-Free Two-Dimensional Photocatalyst for Visible-Light Photocatalytic H2 Production and Nitrogen Fixation

by Yong-Jun Yuan, Nan Lu, Liang Bao, Rui Tang, Fu-Guang Zhang, Jie Guan, Hao-Dong Wang, Qing-Yu Liu, Quan Cheng, Zhen-Tao Yu, and Zhigang Zou

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ACS Nano
DOI: 10.1021/acsnano.2c02831
03 Aug 01:25

[ASAP] Molecular Triplet Sensitization of Monolayer Semiconductors in 2D Organic/Inorganic Hybrid Heterostructures

by Lei Ye, Xuehui Xu, Siyu He, Yanping Liu, Yizheng Jin, Yang Michael Yang, and Haiming Zhu

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ACS Nano
DOI: 10.1021/acsnano.2c03995
03 Aug 01:23

[ASAP] Wafer-Scale Synthesis of 2D Dirac Heterostructures for Self-Driven, Fast, Broadband Photodetectors

by Wenzhi Yu, Zhuo Dong, Haoran Mu, Guanghui Ren, Xiaoyue He, Xiu Li, Shenghuang Lin, Kai Zhang, Qiaoliang Bao, and Sudha Mokkapati

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ACS Nano
DOI: 10.1021/acsnano.2c05278
03 Aug 01:23

[ASAP] Atomically Sharp, Closed Bilayer Phosphorene Edges by Self-Passivation

by Sol Lee, Yangjin Lee, Li Ping Ding, Kihyun Lee, Feng Ding, and Kwanpyo Kim

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ACS Nano
DOI: 10.1021/acsnano.2c05014
03 Aug 01:23

[ASAP] Controlled Growth of Wafer-Scale Transition Metal Dichalcogenides with a Vertical Composition Gradient for Artificial Synapses with High Linearity

by Lei Tang, Changjiu Teng, Runzhang Xu, Zehao Zhang, Usman Khan, Rongjie Zhang, Yuting Luo, Huiyu Nong, Bilu Liu, and Hui-Ming Cheng

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ACS Nano
DOI: 10.1021/acsnano.2c03263
03 Aug 01:22

[ASAP] Momentum-Dependent Oscillator Strength Crossover of Excitons and Plasmons in Two-Dimensional PtSe2

by Jinhua Hong, Mark Kamper Svendsen, Masanori Koshino, Thomas Pichler, Hua Xu, Kazu Suenaga, and Kristian S. Thygesen

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ACS Nano
DOI: 10.1021/acsnano.2c03322
03 Aug 01:22

[ASAP] Synthesis of a Selectively Nb-Doped WS2–MoS2 Lateral Heterostructure for a High-Detectivity PN Photodiode

by Van Tu Vu, Thanh Luan Phan, Thi Thanh Huong Vu, Mi Hyang Park, Van Dam Do, Viet Quoc Bui, Kunnyun Kim, Young Hee Lee, and Woo Jong Yu

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ACS Nano
DOI: 10.1021/acsnano.2c02242
03 Aug 01:22

[ASAP] A Volume Self-Regulation MoS2 Superstructure Cathode for Stable and High Mass-Loaded Zn-Ion Storage

by Zeying Yao, Wei Zhang, Xiaochuan Ren, Yaru Yin, Yuanxin Zhao, Zhiguo Ren, Yuanhe Sun, Qi Lei, Juan Wang, Lihua Wang, Te Ji, Ping Huai, Wen Wen, Xiaolong Li, Daming Zhu, and Renzhong Tai

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ACS Nano
DOI: 10.1021/acsnano.2c02330
03 Aug 01:21

[ASAP] Topological Stone–Wales Defects Enhance Bonding and Electronic Coupling at the Graphene/Metal Interface

by Benedikt P. Klein, Alexander Ihle, Stefan R. Kachel, Lukas Ruppenthal, Samuel J. Hall, Lars Sattler, Sebastian M. Weber, Jan Herritsch, Andrea Jaegermann, Daniel Ebeling, Reinhard J. Maurer, Gerhard Hilt, Ralf Tonner-Zech, André Schirmeisen, and J. Michael Gottfried

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ACS Nano
DOI: 10.1021/acsnano.2c01952
03 Aug 01:14

A tunable bilayer Hubbard model in twisted WSe2

by Yang Xu

Nature Nanotechnology, Published online: 01 August 2022; doi:10.1038/s41565-022-01180-7

Twisted WSe2 AB-homobilayers enable the realization of bilayer Hubbard models in the weak interlayer hopping limit.
03 Aug 01:04

Room-temperature epitaxial welding of 3D and 2D perovskites

by Zhaohua Zhu

Nature Materials, Published online: 25 July 2022; doi:10.1038/s41563-022-01311-4

Heterostructures combine the unique properties of each constituent, improving the efficiency and stability of perovskite-based optoelectronic devices, yet the films suffer from poor compositional and structural uniformity. Here, the authors demonstrate a ligand-assisted welding process to fabricate a series of epitaxial 2D and 3D perovskite heterostructures.
03 Aug 01:03

Twistronics and the small-angle magic

by Ado Jorio

Nature Materials, Published online: 27 July 2022; doi:10.1038/s41563-022-01290-6

Understanding, at the atomic level, the effect of the stacking and twisting of different layered two-dimensional materials is a major challenge for the future of twistronics. Optical excitations evidence twist-angle-dependent whirlpool-shaped distortions in such materials.
03 Aug 00:58

Magnetic memory and spontaneous vortices in a van der Waals superconductor

by Eylon Persky

Nature, Published online: 27 July 2022; doi:10.1038/s41586-022-04855-2

An alternating stack of a candidate spin liquid and a superconductor shows a spontaneous vortex phase in the superconducting state without magnetism in the normal state. This indicates the presence of unconventional magnetic ordering independent of the superconductor.
03 Aug 00:57

P-type electrical contacts for two-dimensional transition metal dichalcogenides

by Yan Wang

Nature, Published online: 01 August 2022; doi:10.1038/s41586-022-05134-w

P-type electrical contacts for two-dimensional transition metal dichalcogenides
25 Jul 13:04

[ASAP] On-Chip Integrated Atomically Thin 2D Material Heater as a Training Accelerator for an Electrochemical Random-Access Memory Synapse for Neuromorphic Computing Application

by Revannath Dnyandeo Nikam, Jongwon Lee, Wooseok Choi, Dongmin Kim, and Hyunsang Hwang

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ACS Nano
DOI: 10.1021/acsnano.2c02913
25 Jul 13:03

[ASAP] MXenes à la Carte: Tailoring the Epitaxial Growth Alternating Nitrogen and Transition Metal Layers

by José D. Gouveia, Ángel Morales-García, Francesc Viñes, José R. B. Gomes, and Francesc Illas

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ACS Nano
DOI: 10.1021/acsnano.2c04029
25 Jul 13:00

[ASAP] High-Pressure Tuning of Magnon-Polarons in the Layered Antiferromagnet FePS3

by Amit Pawbake, Thomas Pelini, Alex Delhomme, Davide Romanin, Diana Vaclavkova, Gerard Martinez, Matteo Calandra, Marie-Aude Measson, Martin Veis, Marek Potemski, Milan Orlita, and Clement Faugeras

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ACS Nano
DOI: 10.1021/acsnano.2c04286
25 Jul 13:00

[ASAP] Field-Free Magnetization Switching in a Ferromagnetic Single Layer through Multiple Inversion Asymmetry Engineering

by Qikun Huang, Chaoshuai Guan, Yibo Fan, Xiaonan Zhao, Xiang Han, Yanan Dong, Xuejie Xie, Tie Zhou, Lihui Bai, Yong Peng, Yufeng Tian, and Shishen Yan

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ACS Nano
DOI: 10.1021/acsnano.2c03756
25 Jul 12:59

[ASAP] Varied Magnetic Phases in a van der Waals Easy-Plane Antiferromagnet Revealed by Nitrogen-Vacancy Center Microscopy

by Alexander J. Healey, Sharidya Rahman, Sam C. Scholten, Islay O. Robertson, Gabriel J. Abrahams, Nikolai Dontschuk, Boqing Liu, Lloyd C. L. Hollenberg, Yuerui Lu, and Jean-Philippe Tetienne

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ACS Nano
DOI: 10.1021/acsnano.2c04132
25 Jul 12:43

Strain solves switch hitch for an antiferromagnetic material

by Kab-Jin Kim

Nature, Published online: 20 July 2022; doi:10.1038/d41586-022-01941-3

Applying strain to a material that has a type of magnetism called antiferromagnetism allows its magnetization to be fully switched with an electric current — making it appealing for use in next-generation magnetic memory devices.