Nature Communications, Published online: 05 July 2022; doi:10.1038/s41467-022-31606-8
Bi2O2Se holds potential for the realization of 2D optical modulators due to its broadband nonlinear response, air stability and carrier mobility. Here, the authors report the realization of defect-engineered Bi2O2Se nanoplates as saturable absorbers for femtosecond solid-state lasers, showing improved output power and pulse duration.jinzhitong
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High output mode-locked laser empowered by defect regulation in 2D Bi2O2Se saturable absorber
[ASAP] Twist Angle-Dependent Molecular Intercalation and Sheet Resistance in Bilayer Graphene

[ASAP] Direct-Chemical Vapor Deposition-Enabled Graphene for Emerging Energy Storage: Versatility, Essentiality, and Possibility

Tunable spin injection and detection across a van der Waals interface
Nature Materials, Published online: 04 August 2022; doi:10.1038/s41563-022-01320-3
The authors investigate tunnelling magnetoresistance in Fe3GeTe2/hBN(WSe2)/Fe3GeTe2 magnetic tunnel junctions and report strong variations with bias including polarization reversals.Wafer-scale transfer of tungsten disulfide
Nature Electronics, Published online: 26 July 2022; doi:10.1038/s41928-022-00818-7
Wafer-scale transfer of tungsten disulfideA laser-assisted chlorination process for reversible writing of doping patterns in graphene
Nature Electronics, Published online: 01 August 2022; doi:10.1038/s41928-022-00801-2
Two laser beams with different energies and configurations can be used to reversibly dope graphene via chlorination and chlorine removal, allowing rewritable graphene photodetectors to be fabricated.A laser-based chemical process enables reversible doping of graphene
Nature Electronics, Published online: 02 August 2022; doi:10.1038/s41928-022-00802-1
Laser-assisted chemical reactions have been used to write reversible ultra-high-density doping patterns in graphene for optoelectronic applications. The approach used two laser beams with specific photon energies and geometric configurations to enable local doping with a high dopant coverage ratio on graphene, while preserving the electronic properties of the surface.[ASAP] The Hidden Flower in WS2 Flakes: A Combined Nanomechanical and Tip-Enhanced Raman Exploration

[ASAP] Nonlinear Optical Activities in Two-Dimensional Gallium Sulfide: A Comprehensive Study

[ASAP] Nonlocal Manipulation of Magnetism in an Itinerant Two-Dimensional Ferromagnet

[ASAP] SiP Nanosheets: A Metal-Free Two-Dimensional Photocatalyst for Visible-Light Photocatalytic H2 Production and Nitrogen Fixation

[ASAP] Molecular Triplet Sensitization of Monolayer Semiconductors in 2D Organic/Inorganic Hybrid Heterostructures

[ASAP] Wafer-Scale Synthesis of 2D Dirac Heterostructures for Self-Driven, Fast, Broadband Photodetectors

[ASAP] Atomically Sharp, Closed Bilayer Phosphorene Edges by Self-Passivation

[ASAP] Controlled Growth of Wafer-Scale Transition Metal Dichalcogenides with a Vertical Composition Gradient for Artificial Synapses with High Linearity

[ASAP] Momentum-Dependent Oscillator Strength Crossover of Excitons and Plasmons in Two-Dimensional PtSe2

[ASAP] Synthesis of a Selectively Nb-Doped WS2–MoS2 Lateral Heterostructure for a High-Detectivity PN Photodiode

[ASAP] A Volume Self-Regulation MoS2 Superstructure Cathode for Stable and High Mass-Loaded Zn-Ion Storage

[ASAP] Topological Stone–Wales Defects Enhance Bonding and Electronic Coupling at the Graphene/Metal Interface

A tunable bilayer Hubbard model in twisted WSe2
Nature Nanotechnology, Published online: 01 August 2022; doi:10.1038/s41565-022-01180-7
Twisted WSe2 AB-homobilayers enable the realization of bilayer Hubbard models in the weak interlayer hopping limit.Room-temperature epitaxial welding of 3D and 2D perovskites
Nature Materials, Published online: 25 July 2022; doi:10.1038/s41563-022-01311-4
Heterostructures combine the unique properties of each constituent, improving the efficiency and stability of perovskite-based optoelectronic devices, yet the films suffer from poor compositional and structural uniformity. Here, the authors demonstrate a ligand-assisted welding process to fabricate a series of epitaxial 2D and 3D perovskite heterostructures.Twistronics and the small-angle magic
Nature Materials, Published online: 27 July 2022; doi:10.1038/s41563-022-01290-6
Understanding, at the atomic level, the effect of the stacking and twisting of different layered two-dimensional materials is a major challenge for the future of twistronics. Optical excitations evidence twist-angle-dependent whirlpool-shaped distortions in such materials.Magnetic memory and spontaneous vortices in a van der Waals superconductor
Nature, Published online: 27 July 2022; doi:10.1038/s41586-022-04855-2
An alternating stack of a candidate spin liquid and a superconductor shows a spontaneous vortex phase in the superconducting state without magnetism in the normal state. This indicates the presence of unconventional magnetic ordering independent of the superconductor.P-type electrical contacts for two-dimensional transition metal dichalcogenides
Nature, Published online: 01 August 2022; doi:10.1038/s41586-022-05134-w
P-type electrical contacts for two-dimensional transition metal dichalcogenides[ASAP] On-Chip Integrated Atomically Thin 2D Material Heater as a Training Accelerator for an Electrochemical Random-Access Memory Synapse for Neuromorphic Computing Application

[ASAP] MXenes à la Carte: Tailoring the Epitaxial Growth Alternating Nitrogen and Transition Metal Layers

[ASAP] High-Pressure Tuning of Magnon-Polarons in the Layered Antiferromagnet FePS3

[ASAP] Field-Free Magnetization Switching in a Ferromagnetic Single Layer through Multiple Inversion Asymmetry Engineering

[ASAP] Varied Magnetic Phases in a van der Waals Easy-Plane Antiferromagnet Revealed by Nitrogen-Vacancy Center Microscopy

Strain solves switch hitch for an antiferromagnetic material
Nature, Published online: 20 July 2022; doi:10.1038/d41586-022-01941-3
Applying strain to a material that has a type of magnetism called antiferromagnetism allows its magnetization to be fully switched with an electric current — making it appealing for use in next-generation magnetic memory devices.