Shared posts

13 Dec 01:57

Molybdenum disulfide transistors with enlarged van der Waals gaps at their dielectric interface via oxygen accumulation

by Pengfei Luo

Nature Electronics, Published online: 05 December 2022; doi:10.1038/s41928-022-00877-w

A van der Waals gap of 5.3 Å can be formed between a hafnium oxide dielectric and molybdenum disulfide channel through oxygen accumulation, which weakens the influence of dielectric defects on the channel material and results in transistors with low hysteresis and steep subthreshold slopes.
13 Dec 01:57

Heterogeneous complementary field-effect transistors based on silicon and molybdenum disulfide

by Ling Tong

Nature Electronics, Published online: 08 December 2022; doi:10.1038/s41928-022-00881-0

By combining p-type transistors made with silicon-on-insulator technology and n-type transistors made with two-dimensional molybdenum disulfide, heterogeneous complementary field-effect transistors can be fabricated on the wafer scale.
13 Dec 01:57

Gate-all-around nanosheet transistors go 2D

by Zhihong Chen

Nature Electronics, Published online: 12 December 2022; doi:10.1038/s41928-022-00899-4

Two-dimensional semiconductors can be used as a channel material in gate-all-around nanosheet field-effect transistors.
13 Dec 01:56

[ASAP] Two-Dimensional Nanomaterial-Templated Composites

by Zhenyu Shi||, Yiyao Ge||, Qinbai Yun||, and Hua Zhang

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Accounts of Chemical Research
DOI: 10.1021/acs.accounts.2c00579
13 Dec 01:55

[ASAP] Carrier Recirculation Induced High-Gain Photodetector Based on van der Waals Heterojunction

by Huiming Shang, Yunxia Hu, Feng Gao, Mingjin Dai, Shichao Zhang, Shuai Wang, Decai Ouyang, Xinyu Li, Xin Song, Bo Gao, Tianyou Zhai, and PingAn Hu

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ACS Nano
DOI: 10.1021/acsnano.2c09366
13 Dec 01:54

[ASAP] Ultralow-Power RRAM with a High Switching Ratio Based on the Large van der Waals Interstice Radius of TMDs

by Jiaying Jian, Pengfan Dong, Zengyun Jian, Ting Zhao, Chen Miao, Honglong Chang, Jian Chen, Yan-Feng Chen, Yan-Bin Chen, Hao Feng, and Brice Sorli

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ACS Nano
DOI: 10.1021/acsnano.2c06728
13 Dec 01:52

[ASAP] Conversion between Metavalent and Covalent Bond in Metastable Superlattices Composed of 2D and 3D Sublayers

by Dasol Kim, Youngsam Kim, Jin-Su Oh, Changwoo Lee, Hyeonwook Lim, Cheol-Woong Yang, Eunji Sim, and Mann-Ho Cho

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ACS Nano
DOI: 10.1021/acsnano.2c07811
13 Dec 01:51

[ASAP] Pulsed Carrier Gas Assisted High-Quality Synthetic 3R‑Phase Sword-like MoS2: A Versatile Optoelectronic Material

by Ramesh Rajarapu, Prahalad Kanti Barman, Renu Yadav, Rabindra Biswas, Manikandan Devaraj, Saroj Poudyal, Bubunu Biswal, Vijay Laxmi, Gopal K. Pradhan, Varun Raghunathan, Pramoda K. Nayak, and Abhishek Misra

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ACS Nano
DOI: 10.1021/acsnano.2c09673
13 Dec 01:49

[ASAP] Spatially Dependent Electronic Structures and Excitons in a Marginally Twisted Moiré Superlattice of Spiral WS2

by Jiangbo Peng, Caixia Ren, Weili Zhang, Hu Chen, Xiaoguang Pan, Hangxin Bai, Fangli Jing, Hailong Qiu, Hongjun Liu, and Zhanggui Hu

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ACS Nano
DOI: 10.1021/acsnano.2c10562
13 Dec 01:49

[ASAP] Spin Coating Promotes the Epitaxial Growth of AgCN Microwires on 2D Materials

by Jimin Ham, Jaemook Lim, Sukjoon Hong, and Won Chul Lee

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ACS Nano
DOI: 10.1021/acsnano.2c06963
13 Dec 01:49

[ASAP] Ion Transport in 2D Nanostructured π‑Conjugated Thieno[3,2‑b]thiophene-Based Liquid Crystal

by Zhongyang Wang, Chaoqiuyu Wang, Yangyang Sun, Kai Wang, Joseph W. Strzalka, Shrayesh N. Patel, Paul F. Nealey, Christopher K. Ober, and Fernando A. Escobedo

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ACS Nano
DOI: 10.1021/acsnano.2c07789
13 Dec 01:38

2D materials for fast flash memory devices

by Olga Bubnova

Nature Nanotechnology, Published online: 08 December 2022; doi:10.1038/s41565-022-01299-7

2D materials for fast flash memory devices
13 Dec 01:37

Dual-density waves with neutral and charged dipolar excitons of GaAs bilayers

by Camille Lagoin

Nature Materials, Published online: 08 December 2022; doi:10.1038/s41563-022-01409-9

Both bosonic and fermionic collective states can emerge in two-dimensional semiconductor lattices, and mixing these species can further expand the landscape of quantum phases. Here, the authors report Bose–Fermi mixtures of neutral and charged excitons and the emergence of dual-density waves in an electrostatic lattice in a GaAs bilayer.
05 Dec 01:53

Elastic electronics based on micromesh-structured rubbery semiconductor films

by Ying-Shi Guan

Nature Electronics, Published online: 28 November 2022; doi:10.1038/s41928-022-00874-z

Semiconductor polymer films that are based on a lateral-phase-separation-induced micromesh can be used to create transistors, complementary inverters and bilayer heterojunction photodetectors that can function under applied strains of up to 50%.
05 Dec 01:53

Publisher Correction: An anomalous Hall effect in altermagnetic ruthenium dioxide

by Zexin Feng

Nature Electronics, Published online: 29 November 2022; doi:10.1038/s41928-022-00907-7

Publisher Correction: An anomalous Hall effect in altermagnetic ruthenium dioxide
05 Dec 01:47

[ASAP] Extraordinary Phonon Displacement and Giant Resonance Raman Enhancement in WSe2/WS2 Moiré Heterostructures

by Sharidya Rahman, Xueqian Sun, Yi Zhu, and Yuerui Lu

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ACS Nano
DOI: 10.1021/acsnano.2c10092
05 Dec 01:45

[ASAP] Defect Engineering To Tailor Metal Vacancies in 2D Conductive Metal–Organic Frameworks: An Example in Electrochemical Sensing

by Yang Luo, Yinghong Wu, Artur Braun, Chao Huang, Xiao-yan Li||, Carlo Menon, and Paul K. Chu

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ACS Nano
DOI: 10.1021/acsnano.2c08097
05 Dec 01:44

[ASAP] Germanium Monosulfide as a Natural Platform for Highly Anisotropic THz Polaritons

by Tobias Nörenberg, Gonzalo Álvarez-Pérez, Maximilian Obst, Lukas Wehmeier, Franz Hempel□, J. Michael Klopf, Alexey Y. Nikitin△, Susanne C. Kehr, Lukas M. Eng□, Pablo Alonso-González, and Thales V. A. G. de Oliveira

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ACS Nano
DOI: 10.1021/acsnano.2c05376
05 Dec 01:43

[ASAP] Enhancing the Purity of Deterministically Placed Quantum Emitters in Monolayer WSe2

by Christopher E. Stevens, Hsun-Jen Chuang, Matthew R. Rosenberger, Kathleen M. McCreary, Chandriker Kavir Dass, Berend T. Jonker, and Joshua R. Hendrickson

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ACS Nano
DOI: 10.1021/acsnano.2c08553
05 Dec 01:43

[ASAP] Theoretical Prediction of Antiferromagnetic Skyrmion Crystal in Janus Monolayer CrSi2N2As2

by Kaiying Dou, Wenhui Du, Zhonglin He, Ying Dai, Baibiao Huang, and Yandong Ma

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ACS Nano
DOI: 10.1021/acsnano.2c08544
05 Dec 01:39

[ASAP] An Ultrahigh Linear Sensitive Temperature Sensor Based on PANI:Graphene and PDMS Hybrid with Negative Temperature Compensation

by Hang Liu, Kuan Sun, Xiao-Liang Guo, Zi-Lin Liu, Yu-Hao Wang, Yi Yang, Duli Yu, Yu-Tao Li, and Tian-Ling Ren

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ACS Nano
DOI: 10.1021/acsnano.2c10342
05 Dec 01:39

[ASAP] Water Structures Reveal Local Hydrophobicity on the In2O3(111) Surface

by Hao Chen, Matthias A. Blatnik, Christian L. Ritterhoff, Igor Sokolović, Francesca Mirabella, Giada Franceschi, Michele Riva, Michael Schmid, Jan Čechal, Bernd Meyer, Ulrike Diebold, and Margareta Wagner

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ACS Nano
DOI: 10.1021/acsnano.2c09115
05 Dec 01:37

[ASAP] A “Click” Reaction to Engineer MoS2 Field-Effect Transistors with Low Contact Resistance

by Jialei Miao, Linlu Wu, Zheng Bian, Qinghai Zhu, Tianjiao Zhang, Xin Pan, Jiayang Hu, Wei Xu, Yeliang Wang, Yang Xu, Bin Yu, Wei Ji, Xiaowei Zhang, Jingsi Qiao, Paolo Samorì, and Yuda Zhao

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ACS Nano
DOI: 10.1021/acsnano.2c07670
05 Dec 01:36

[ASAP] Monolayer Thiol Engineered Covalent Interface toward Stable Zinc Metal Anode

by Shiqiang Wei, Zheng-Hang Qi, Yujian Xia, Shuangming Chen, Changda Wang, Yixiu Wang, Pengjun Zhang, Kefu Zhu, Yuyang Cao, Xin Guo, Xiya Yang, Qilong Cui, Xiaosong Liu, Xiaojun Wu, and Li Song

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ACS Nano
DOI: 10.1021/acsnano.2c09111
05 Dec 01:35

Crossed Luttinger liquid hidden in a quasi-two-dimensional material

by X. Du

Nature Physics, Published online: 01 December 2022; doi:10.1038/s41567-022-01829-z

The Luttinger liquid is a theoretical concept used to describe interacting fermions in a 1D system. Now it is shown that the model also describes electron physics in η-Mo4O11, a quasi-2D material in which 1D chains cross each other.
28 Nov 01:31

[ASAP] Nonvolatile Electrical Valley Manipulation in WS2 by Ferroelectric Gating

by Xu Li, Chengbiao Yang, Yuanzheng Xia, Xinlong Zeng, Peng Shen, Linglong Li, Feiya Xu, Duanjun Cai, Yaping Wu, Zhiming Wu, Shuping Li, and Junyong Kang

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ACS Nano
DOI: 10.1021/acsnano.2c07469
28 Nov 01:31

[ASAP] Stacking Fault Induced Symmetry Breaking in van der Waals Nanowires

by Eli Sutter, Hannu-Pekka Komsa, Alexander A. Puretzky, Raymond R. Unocic, and Peter Sutter

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ACS Nano
DOI: 10.1021/acsnano.2c09172
28 Nov 01:30

[ASAP] Waveguide-Integrated MoTe2p–i–n Homojunction Photodetector

by Chen Li, Ruijuan Tian, Xiaoqing Chen, Linpeng Gu, Zhengdong Luo, Qiao Zhang, Ruixuan Yi, Zhiwen Li, Biqiang Jiang, Yan Liu, Andres Castellanos-Gomez, Soo-Jin Chua, Xiaomu Wang, Zhipei Sun, Jianlin Zhao, and Xuetao Gan

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ACS Nano
DOI: 10.1021/acsnano.2c08549
28 Nov 01:30

[ASAP] In Situ Alloying Sites Anchored on an Amorphous Aluminum Nitride Matrix for Crystallographic Reorientation of Zinc Deposits

by Jiaxian Zheng, Yuncheng Wu, Hongxing Xie, Ye Zeng, Wanqiang Liu, Appala Naidu Gandi, Zhengbing Qi, Zhoucheng Wang, and Hanfeng Liang

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ACS Nano
DOI: 10.1021/acsnano.2c08196
28 Nov 01:30

[ASAP] Lasing in Two-Dimensional Tin Perovskites

by Ada Lilí Alvarado-Leaños, Daniele Cortecchia, Christian Niclaas Saggau, Samuele Martani, Giulia Folpini, Elena Feltri, Munirah D. Albaqami, Libo Ma, and Annamaria Petrozza

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ACS Nano
DOI: 10.1021/acsnano.2c07705