Nature Electronics, Published online: 05 December 2022; doi:10.1038/s41928-022-00877-w
A van der Waals gap of 5.3 Å can be formed between a hafnium oxide dielectric and molybdenum disulfide channel through oxygen accumulation, which weakens the influence of dielectric defects on the channel material and results in transistors with low hysteresis and steep subthreshold slopes.jinzhitong
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13 Dec 01:57
Molybdenum disulfide transistors with enlarged van der Waals gaps at their dielectric interface via oxygen accumulation
by Pengfei Luo
13 Dec 01:57
Heterogeneous complementary field-effect transistors based on silicon and molybdenum disulfide
by Ling Tong
Nature Electronics, Published online: 08 December 2022; doi:10.1038/s41928-022-00881-0
By combining p-type transistors made with silicon-on-insulator technology and n-type transistors made with two-dimensional molybdenum disulfide, heterogeneous complementary field-effect transistors can be fabricated on the wafer scale.
ytdcty likes this
13 Dec 01:57
Gate-all-around nanosheet transistors go 2D
by Zhihong Chen
Nature Electronics, Published online: 12 December 2022; doi:10.1038/s41928-022-00899-4
Two-dimensional semiconductors can be used as a channel material in gate-all-around nanosheet field-effect transistors.
13 Dec 01:56
[ASAP] Two-Dimensional Nanomaterial-Templated Composites
by Zhenyu Shi||, Yiyao Ge||, Qinbai Yun||, and Hua Zhang

Accounts of Chemical Research
DOI: 10.1021/acs.accounts.2c00579
13 Dec 01:55
[ASAP] Carrier Recirculation Induced High-Gain Photodetector Based on van der Waals Heterojunction
by Huiming Shang, Yunxia Hu, Feng Gao, Mingjin Dai, Shichao Zhang, Shuai Wang, Decai Ouyang, Xinyu Li, Xin Song, Bo Gao, Tianyou Zhai, and PingAn Hu

ACS Nano
DOI: 10.1021/acsnano.2c09366
13 Dec 01:54
[ASAP] Ultralow-Power RRAM with a High Switching Ratio Based on the Large van der Waals Interstice Radius of TMDs
by Jiaying Jian, Pengfan Dong, Zengyun Jian, Ting Zhao, Chen Miao, Honglong Chang, Jian Chen, Yan-Feng Chen, Yan-Bin Chen, Hao Feng, and Brice Sorli

ACS Nano
DOI: 10.1021/acsnano.2c06728
13 Dec 01:52
[ASAP] Conversion between Metavalent and Covalent Bond in Metastable Superlattices Composed of 2D and 3D Sublayers
by Dasol Kim, Youngsam Kim, Jin-Su Oh, Changwoo Lee, Hyeonwook Lim, Cheol-Woong Yang, Eunji Sim, and Mann-Ho Cho

ACS Nano
DOI: 10.1021/acsnano.2c07811
13 Dec 01:51
[ASAP] Pulsed Carrier Gas Assisted High-Quality Synthetic 3R‑Phase Sword-like MoS2: A Versatile Optoelectronic Material
by Ramesh Rajarapu, Prahalad Kanti Barman, Renu Yadav, Rabindra Biswas, Manikandan Devaraj, Saroj Poudyal, Bubunu Biswal, Vijay Laxmi, Gopal K. Pradhan, Varun Raghunathan, Pramoda K. Nayak, and Abhishek Misra

ACS Nano
DOI: 10.1021/acsnano.2c09673
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13 Dec 01:49
[ASAP] Spatially Dependent Electronic Structures and Excitons in a Marginally Twisted Moiré Superlattice of Spiral WS2
by Jiangbo Peng, Caixia Ren, Weili Zhang, Hu Chen, Xiaoguang Pan, Hangxin Bai, Fangli Jing, Hailong Qiu, Hongjun Liu, and Zhanggui Hu

ACS Nano
DOI: 10.1021/acsnano.2c10562
Alex Strasser likes this
13 Dec 01:49
[ASAP] Spin Coating Promotes the Epitaxial Growth of AgCN Microwires on 2D Materials
by Jimin Ham, Jaemook Lim, Sukjoon Hong, and Won Chul Lee

ACS Nano
DOI: 10.1021/acsnano.2c06963
13 Dec 01:49
[ASAP] Ion Transport in 2D Nanostructured π‑Conjugated Thieno[3,2‑b]thiophene-Based Liquid Crystal
by Zhongyang Wang, Chaoqiuyu Wang, Yangyang Sun, Kai Wang, Joseph W. Strzalka, Shrayesh N. Patel, Paul F. Nealey, Christopher K. Ober, and Fernando A. Escobedo

ACS Nano
DOI: 10.1021/acsnano.2c07789
sy likes this
13 Dec 01:38
2D materials for fast flash memory devices
by Olga Bubnova
Nature Nanotechnology, Published online: 08 December 2022; doi:10.1038/s41565-022-01299-7
2D materials for fast flash memory devices
13 Dec 01:37
Dual-density waves with neutral and charged dipolar excitons of GaAs bilayers
by Camille Lagoin
Nature Materials, Published online: 08 December 2022; doi:10.1038/s41563-022-01409-9
Both bosonic and fermionic collective states can emerge in two-dimensional semiconductor lattices, and mixing these species can further expand the landscape of quantum phases. Here, the authors report Bose–Fermi mixtures of neutral and charged excitons and the emergence of dual-density waves in an electrostatic lattice in a GaAs bilayer.
05 Dec 01:53
Elastic electronics based on micromesh-structured rubbery semiconductor films
by Ying-Shi Guan
Nature Electronics, Published online: 28 November 2022; doi:10.1038/s41928-022-00874-z
Semiconductor polymer films that are based on a lateral-phase-separation-induced micromesh can be used to create transistors, complementary inverters and bilayer heterojunction photodetectors that can function under applied strains of up to 50%.
05 Dec 01:53
Publisher Correction: An anomalous Hall effect in altermagnetic ruthenium dioxide
by Zexin Feng
Nature Electronics, Published online: 29 November 2022; doi:10.1038/s41928-022-00907-7
Publisher Correction: An anomalous Hall effect in altermagnetic ruthenium dioxide
05 Dec 01:47
[ASAP] Extraordinary Phonon Displacement and Giant Resonance Raman Enhancement in WSe2/WS2 Moiré Heterostructures
by Sharidya Rahman, Xueqian Sun, Yi Zhu, and Yuerui Lu

ACS Nano
DOI: 10.1021/acsnano.2c10092
Alex Strasser likes this
05 Dec 01:45
[ASAP] Defect Engineering To Tailor Metal Vacancies in 2D Conductive Metal–Organic Frameworks: An Example in Electrochemical Sensing
by Yang Luo, Yinghong Wu, Artur Braun, Chao Huang, Xiao-yan Li||, Carlo Menon, and Paul K. Chu

ACS Nano
DOI: 10.1021/acsnano.2c08097
sy and -1 others like this
05 Dec 01:44
[ASAP] Germanium Monosulfide as a Natural Platform for Highly Anisotropic THz Polaritons
by Tobias Nörenberg, Gonzalo Álvarez-Pérez, Maximilian Obst, Lukas Wehmeier, Franz Hempel□, J. Michael Klopf, Alexey Y. Nikitin△, Susanne C. Kehr, Lukas M. Eng□, Pablo Alonso-González, and Thales V. A. G. de Oliveira

ACS Nano
DOI: 10.1021/acsnano.2c05376
05 Dec 01:43
[ASAP] Enhancing the Purity of Deterministically Placed Quantum Emitters in Monolayer WSe2
by Christopher E. Stevens, Hsun-Jen Chuang, Matthew R. Rosenberger, Kathleen M. McCreary, Chandriker Kavir Dass, Berend T. Jonker, and Joshua R. Hendrickson

ACS Nano
DOI: 10.1021/acsnano.2c08553
05 Dec 01:43
[ASAP] Theoretical Prediction of Antiferromagnetic Skyrmion Crystal in Janus Monolayer CrSi2N2As2
by Kaiying Dou, Wenhui Du, Zhonglin He, Ying Dai, Baibiao Huang, and Yandong Ma

ACS Nano
DOI: 10.1021/acsnano.2c08544
Zhao zhaoyang likes this
05 Dec 01:39
[ASAP] An Ultrahigh Linear Sensitive Temperature Sensor Based on PANI:Graphene and PDMS Hybrid with Negative Temperature Compensation
by Hang Liu, Kuan Sun, Xiao-Liang Guo, Zi-Lin Liu, Yu-Hao Wang, Yi Yang, Duli Yu, Yu-Tao Li, and Tian-Ling Ren

ACS Nano
DOI: 10.1021/acsnano.2c10342
05 Dec 01:39
[ASAP] Water Structures Reveal Local Hydrophobicity on the In2O3(111) Surface
by Hao Chen, Matthias A. Blatnik, Christian L. Ritterhoff, Igor Sokolović, Francesca Mirabella, Giada Franceschi, Michele Riva, Michael Schmid, Jan Čechal, Bernd Meyer, Ulrike Diebold, and Margareta Wagner

ACS Nano
DOI: 10.1021/acsnano.2c09115
05 Dec 01:37
[ASAP] A “Click” Reaction to Engineer MoS2 Field-Effect Transistors with Low Contact Resistance
by Jialei Miao, Linlu Wu, Zheng Bian, Qinghai Zhu, Tianjiao Zhang, Xin Pan, Jiayang Hu, Wei Xu, Yeliang Wang, Yang Xu, Bin Yu, Wei Ji, Xiaowei Zhang, Jingsi Qiao, Paolo Samorì, and Yuda Zhao

ACS Nano
DOI: 10.1021/acsnano.2c07670
Alex Strasser, ytdcty likes this
05 Dec 01:36
[ASAP] Monolayer Thiol Engineered Covalent Interface toward Stable Zinc Metal Anode
by Shiqiang Wei, Zheng-Hang Qi, Yujian Xia, Shuangming Chen, Changda Wang, Yixiu Wang, Pengjun Zhang, Kefu Zhu, Yuyang Cao, Xin Guo, Xiya Yang, Qilong Cui, Xiaosong Liu, Xiaojun Wu, and Li Song

ACS Nano
DOI: 10.1021/acsnano.2c09111
05 Dec 01:35
Crossed Luttinger liquid hidden in a quasi-two-dimensional material
by X. Du
Nature Physics, Published online: 01 December 2022; doi:10.1038/s41567-022-01829-z
The Luttinger liquid is a theoretical concept used to describe interacting fermions in a 1D system. Now it is shown that the model also describes electron physics in η-Mo4O11, a quasi-2D material in which 1D chains cross each other.
28 Nov 01:31
[ASAP] Nonvolatile Electrical Valley Manipulation in WS2 by Ferroelectric Gating
by Xu Li, Chengbiao Yang, Yuanzheng Xia, Xinlong Zeng, Peng Shen, Linglong Li, Feiya Xu, Duanjun Cai, Yaping Wu, Zhiming Wu, Shuping Li, and Junyong Kang

ACS Nano
DOI: 10.1021/acsnano.2c07469
Alex Strasser likes this
28 Nov 01:31
[ASAP] Stacking Fault Induced Symmetry Breaking in van der Waals Nanowires
by Eli Sutter, Hannu-Pekka Komsa, Alexander A. Puretzky, Raymond R. Unocic, and Peter Sutter

ACS Nano
DOI: 10.1021/acsnano.2c09172
Milo likes this
28 Nov 01:30
[ASAP] Waveguide-Integrated MoTe2p–i–n Homojunction Photodetector
by Chen Li, Ruijuan Tian, Xiaoqing Chen, Linpeng Gu, Zhengdong Luo, Qiao Zhang, Ruixuan Yi, Zhiwen Li, Biqiang Jiang, Yan Liu, Andres Castellanos-Gomez, Soo-Jin Chua, Xiaomu Wang, Zhipei Sun, Jianlin Zhao, and Xuetao Gan

ACS Nano
DOI: 10.1021/acsnano.2c08549
ytdcty likes this
28 Nov 01:30
[ASAP] In Situ Alloying Sites Anchored on an Amorphous Aluminum Nitride Matrix for Crystallographic Reorientation of Zinc Deposits
by Jiaxian Zheng, Yuncheng Wu, Hongxing Xie, Ye Zeng, Wanqiang Liu, Appala Naidu Gandi, Zhengbing Qi, Zhoucheng Wang, and Hanfeng Liang

ACS Nano
DOI: 10.1021/acsnano.2c08196
wangbo likes this
28 Nov 01:30
[ASAP] Lasing in Two-Dimensional Tin Perovskites
by Ada Lilí Alvarado-Leaños, Daniele Cortecchia, Christian Niclaas Saggau, Samuele Martani, Giulia Folpini, Elena Feltri, Munirah D. Albaqami, Libo Ma, and Annamaria Petrozza

ACS Nano
DOI: 10.1021/acsnano.2c07705
Alex Strasser, Soumen Ghosh likes this