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09 Oct 15:28

Room temperature spontaneous valley polarization in two-dimensional FeClBr monolayer

Nanoscale, 2021, 13,14807-14813
DOI: 10.1039/D1NR04063D, Paper
Rui Li, Jiawei Jiang, Wenbo Mi, Haili Bai
The exchange interaction and spin-orbit coupling effect lead to the valley polarization and the schematic of anomalous valley Hall effect.
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27 Aug 08:02

Synthesis of boron nitride nanosheets powders using a plasma based bottom-up approach

by Aqeel Alrebh and Jean-Luc Meunier
Boron nitride nanosheets (BNNS) are graphene-like materials with large bandgap and excellent thermal/chemical stability. Current BNNS synthesis methods show low yield and/or purity preventing effective implementation in real-life applications. This work reports two catalyst-free bottom-up approaches for BNNS synthesis using induction thermal plasma. High enthalpy and cooling rates of this plasma allow BNNS to form homogeneously when using solid ammonia borane (AB) as a precursor. In this case, clusters of B x N y H z nucleate to form particles of critical sizes on which BNNS propagate while releasing H 2 . Using boron powders instead of AB produces BNNS through a heterogeneous route. In this case, boron undergoes spheroidization while active nitrogen species diffuse on the liquid surface to form boron nitride nanowalls which propagate into BNNS. The operating pressure and nitrogen loading are shown to control BNNS n...
27 Aug 08:02

Ferroelectric semiconductor junctions based on graphene/In 2 Se 3 /graphene van der Waals heterostructures

by Shihong Xie, Anubhab Dey, Wenjing Yan, Zakhar R Kudrynskyi, Nilanthy Balakrishnan, Oleg Makarovsky, Zakhar D Kovalyuk, Eli G Castanon, Oleg Kolosov, Kaiyou Wang and Amalia Patanè
The miniaturization of ferroelectric devices offers prospects for non-volatile memories, low-power electrical switches and emerging technologies beyond existing Si-based integrated circuits. An emerging class of ferroelectrics is based on van der Waals (vdW) two-dimensional materials with potential for nano-ferroelectrics. Here, we report on ferroelectric semiconductor junctions (FSJs) in which the ferroelectric vdW semiconductor α -In 2 Se 3 is embedded between two single-layer graphene electrodes. In these two-terminal devices, the ferroelectric polarization of the nanometre-thick In 2 Se 3 layer modulates the transmission of electrons across the graphene/In 2 Se 3 interface, leading to memristive effects that are controlled by applied voltages and/or by light. The underlying mechanisms of conduction are examined over a range of temperatures and under light excitation revealing thermionic injection, tunnelling and ...
27 Aug 08:02

Analytical measurements of contact resistivity in two-dimensional WSe 2 field-effect transistors

by Inyong Moon, Min Sup Choi, Sungwon Lee, Ankur Nipane, James Hone and Won Jong Yoo
It becomes clear that, in two-dimensional (2D) materials-based devices, sheet resistances underneath electrodes change due to a metallic contact, leading to substantial errors in determining a transfer length. Thus, the extraction of transfer length and corresponding contact resistivity must be revisited to assess the performance of 2D devices. In this study, we present the three different approaches of determining the contact resistivity in 2D WSe 2 field effect transistors for the first time by theoretical analysis using the resistive network model as well as electrical measurements using the contact-end resistance and transfer length methods, based on the followings: (a) contact resistance multiplied by transfer length ( ##IMG## [http://ej.iop.org/images/2053-1583/8/4/045019/tdmac1adbieqn1.gif] {${R_{{\text{cf}}}}W \cdot {L_{{\text{Tk}}}}$} ), (b) integrated contact resistance ( ##IMG## {$\smallint\limits_0^L R \left( x \right) \cd...}
21 Aug 06:51

WS2 moiré superlattices derived from mechanical flexibility for hydrogen evolution reaction

by Lingbin Xie

Nature Communications, Published online: 20 August 2021; doi:10.1038/s41467-021-25381-1

Expanding the available materials with moiré superlattices is interesting but also challenging. Here the authors use a one-step hydrothermal approach to synthesis WS2 moiré superlattices with high catalytic activity for hydrogen evolution reaction
20 Aug 09:57

[ASAP] Moiré Skyrmions and Chiral Magnetic Phases in Twisted CrX3 (X = I, Br, and Cl) Bilayers

by Muhammad Akram, Harrison LaBollita, Dibyendu Dey, Jesse Kapeghian, Onur Erten, and Antia S. Botana

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Nano Letters
DOI: 10.1021/acs.nanolett.1c02096
20 Aug 09:55

[ASAP] Charge Transfer Gap Tuning via Structural Distortion in Monolayer 1T-NbSe2

by Zhen-Yu Liu, Shuang Qiao, Bing Huang, Qiao-Yin Tang, Zi-Heng Ling, Wen-Hao Zhang, Hui-Nan Xia, Xin Liao, Hu Shi, Wen-Hao Mao, Gui-Lin Zhu, Jing-Tao Lü, and Ying-Shuang Fu

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Nano Letters
DOI: 10.1021/acs.nanolett.1c02348
20 Aug 09:50

[ASAP] Superconducting Quantum Interference in Twisted van der Waals Heterostructures

by Liam S. Farrar, Aimee Nevill, Zhen Jieh Lim, Geetha Balakrishnan, Sara Dale, and Simon J. Bending

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Nano Letters
DOI: 10.1021/acs.nanolett.1c00152
20 Aug 09:50

[ASAP] Observation of Giant Optical Linear Dichroism in a Zigzag Antiferromagnet FePS3

by Qi Zhang, Kyle Hwangbo, Chong Wang, Qianni Jiang, Jiun-Haw Chu, Haidan Wen, Di Xiao, and Xiaodong Xu

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Nano Letters
DOI: 10.1021/acs.nanolett.1c02188
20 Aug 09:47

[ASAP] Spin/Valley Coupled Dynamics of Electrons and Holes at the MoS2–MoSe2 Interface

by Abhijeet Kumar, Denis Yagodkin, Nele Stetzuhn, Sviatoslav Kovalchuk, Alexey Melnikov, Peter Elliott, Sangeeta Sharma, Cornelius Gahl, and Kirill I. Bolotin

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Nano Letters
DOI: 10.1021/acs.nanolett.1c01538
20 Aug 09:46

Molecular beam epitaxial growth of hexagonal boron nitride on Ni foils

by Jawad Hadid, Ivy Colambo, Christophe Boyaval, Nicolas Nuns, Pavel Dudin, Jose Avila, Xavier Wallart and Dominique Vignaud
Hexagonal boron nitride (h-BN) was synthesized by molecular beam epitaxy on polycrystalline Ni foils using borazine (B 3 N 3 H 6 ) as precursor. Our photoemission analysis shows that several components of boron and nitrogen are detected, suggesting the complex nature of the bonds noticeably at the h-BN/Ni interface. The BN thickness was estimated by photoemission and the BN distribution by time-of-flight secondary ion mass spectroscopy. Due to the catalytic effect of the Ni substrate, this thickness is self-limited in the range 1–2 layers regardless of the borazine dose. A spatially resolved photoemission study was carried out before and after transfer of the h-BN on a Si substrate. It shows that a strong electronic coupling exists at the interface between h-BN and polycrystalline Ni, not only for (111) grains, which disappears after transfer on Si. In addition, we highlight the importance of detecting π plasmons in the photoemission spectra to ...
20 Aug 09:37

Electronic and magnetic properties of VOCl/FeOCl antiferromagnetic heterobilayers

by F Mahrouche, K Rezouali, Z C Wang, J Fernández-Rossier and A Molina-Sánchez
We study the electronic properties of the heterobilayer of vanadium and iron oxychlorides, VOCl and FeOCl, two layered air stable van der Waals insulating oxides with different types of antiferromagnetic order in bulk: VOCl monolayers are ferromagnetic (FM) whereas the FeOCl monolayers are antiferromagnetic (AF). We use density functional theory calculations, with Hubbard correction that is found to be needed to describe correctly the insulating nature of these compounds. We compute the magnetic anisotropy and propose a spin model Hamiltonian. Our calculations show that interlayer coupling is weak and hence the magnetic order of each monolayers is preserved in the heterobilayer. Thus, the heterobilayer combines antiferromagnetic and ferromagnetic orders. Interlayer exchange should lead both to exchange bias and to the emergence of hybrid collective modes that combine FM and AF magnons. The energy band of the heterobilayer show a type II band alignment, and feature spin-splitting...
20 Aug 08:39

Room temperature ppt-level NO 2 gas sensor based on SnO x /SnS nanostructures with rich oxygen vacancies

by Hongyu Tang, Chenshan Gao, Huiru Yang, Leandro Sacco, Robert Sokolovskij, Hongze Zheng, Huaiyu Ye, Sten Vollebregt, Hongyu Yu, Xuejun Fan and Guoqi Zhang
In this paper, tin oxidation (SnO x )/tin-sulfide (SnS) heterostructures are synthesized by the post-oxidation of liquid-phase exfoliated SnS nanosheets in air. We comparatively analyzed the NO 2 gas response of samples with different oxidation levels to study the gas sensing mechanisms. The results show that the samples oxidized at 325 °C are the most sensitive to NO 2 gas molecules, followed by the samples oxidated at 350 °C, 400 °C and 450 °C. The repeatabilities of 350 °C samples are better than that of 325 °C, and there is almost no shift in the baseline. Thus this work systematically analyzed the gas sensing performance of SnO x /SnS-based sensor oxidized at 350 °C. It exhibits a high response of 171% towards 1 ppb NO 2 , a wide detecting range (from 1 ppb to 1 ppm), and an ultra-low theoretical detection limit of 5 ppt, and excellent repeatability at room temperature. The sensor also shows superior gas selec...
20 Aug 08:39

Flat band properties of twisted transition metal dichalcogenide homo- and heterobilayers of MoS 2 , MoSe 2 , WS 2 and WSe 2

by V Vitale, K Atalar, A A Mostofi and J Lischner
Twisted bilayers of two-dimensional materials, such as twisted bilayer graphene, often feature flat electronic bands that enable the observation of electron correlation effects. In this work, we study the electronic structure of twisted transition metal dichalcogenide homo- and heterobilayers that are obtained by combining MoS 2 , WS 2 , MoSe 2 and WSe 2 monolayers, and show how flat band properties depend on the chemical composition of the bilayer as well as its twist angle. We determine the relaxed atomic structure of the twisted bilayers using classical force fields and calculate the electronic band structure using a tight-binding model parametrized from first-principles density-functional theory. We find that the highest valence bands in these systems can derive either from Γ-point or K/ ##IMG## [http://ej.iop.org/images/2053-1583/8/4/045010/tdmac15d9ieqn1.gif] {$K^{^{\prime}}$} -point states of the constituent monola...
20 Aug 08:39

Dynamics of 2D material membranes

by Peter G Steeneken, Robin J Dolleman, Dejan Davidovikj, Farbod Alijani and Herre S J van der Zant
The dynamics of suspended two-dimensional (2D) materials has received increasing attention during the last decade, yielding new techniques to study and interpret the physics that governs the motion of atomically thin layers. This has led to insights into the role of thermodynamic and nonlinear effects as well as the mechanisms that govern dissipation and stiffness in these resonators. In this review, we present the current state-of-the-art in the experimental study of the dynamics of 2D membranes. The focus will be both on the experimental measurement techniques and on the interpretation of the physical phenomena exhibited by atomically thin membranes in the linear and nonlinear regimes. We will show that resonant 2D membranes have emerged both as sensitive probes of condensed matter physics in ultrathin layers, and as sensitive elements to monitor small external forces or other changes in the environment. New directions for utilizing suspended 2D membranes for material characte...
20 Aug 08:38

Imaging Seebeck drift of excitons and trions in MoSe 2 monolayers

by Sangjun Park, Bo Han, Caroline Boule, Daniel Paget, Alistair C H Rowe, Fausto Sirotti, Takashi Taniguchi, Kenji Watanabe, Cedric Robert, Laurent Lombez, Bernhard Urbaszek, Xavier Marie and Fabian Cadiz
Hyperspectral imaging at cryogenic temperatures is used to investigate exciton and trion propagation in MoSe 2 monolayers (ML) encapsulated with hexagonal boron nitride (hBN). Under a tightly focused, continuous-wave laser excitation, the spatial distribution of neutral excitons and charged trions strongly differ at high excitation densities. Remarkably, in this regime the trion distribution develops a halo shape, similar to that previously observed in WS 2 ML at room temperature and under pulsed excitation. In contrast, the exciton distribution only presents a moderate broadening attributed to a much less pronounced halo. Spatially and spectrally resolved luminescence spectra reveal the buildup of a significant temperature gradient at high excitation power, that is attributed to the energy relaxation of photoinduced hot carriers. We show, via a numerical resolution of the transport equations for excitons and trions, that the halo can be interpreted as therma...
20 Aug 08:34

High thermoelectric performance enabled by convergence of nested conduction bands in Pb7Bi4Se13 with low thermal conductivity

by Lei Hu

Nature Communications, Published online: 09 August 2021; doi:10.1038/s41467-021-25119-z

Lillianite materials usually have low thermoelectric efficiency due to the inherently inferior electrical properties. Here, the authors evaluate thermoelectric performances in Pb7Bi4Se13 based lillianites enabled by convergence of nested conduction bands.
20 Aug 08:33

Exciton-driven antiferromagnetic metal in a correlated van der Waals insulator

by Carina A. Belvin

Nature Communications, Published online: 10 August 2021; doi:10.1038/s41467-021-25164-8

Previous work has shown the existence of spin-orbit-entangled excitons and their coupling to antiferromagnetism in the correlated insulator NiPS3. Here the authors show that non-equilibrium driving of these excitons produces a transient metallic antiferromagnetic state that cannot be achieved by tuning the temperature in equilibrium.
20 Aug 08:25

Tunable exciton-polaritons emerging from WS2 monolayer excitons in a photonic lattice at room temperature

by L. Lackner

Nature Communications, Published online: 16 August 2021; doi:10.1038/s41467-021-24925-9

Excitons in atomically thin crystals couple strongly with light. Here, the authors observe lattice polaritons in a tunable open optical cavity at room temperature, with an imprinted photonic lattice strongly coupled to excitons in a WS2 monolayer.
29 Jul 02:50

Large linear non-saturating magnetoresistance and high mobility in ferromagnetic MnBi

by Yangkun He

Nature Communications, Published online: 28 July 2021; doi:10.1038/s41467-021-24692-7

Ferromagnetic systems rarely display a large or non-saturating magnetoresistance, due to the low Fermi velocity of the predominant charge carrier. Here, the authors show that MnBi, a ferromagnet, bucks this trend, showing both large and non-saturating magnetoresistance, and high charge carrier motilities.
29 Jul 02:49

[ASAP] Hybrid Symmetry Epitaxy of the Superconducting Fe(Te,Se) Film on a Topological Insulator

by Xiong Yao, Matthew Brahlek, Hee Taek Yi, Deepti Jain, Alessandro R. Mazza, Myung-Geun Han, and Seongshik Oh

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Nano Letters
DOI: 10.1021/acs.nanolett.1c01703
25 Jul 13:51

[ASAP] Doping-Mediated Lattice Engineering of Monolayer ReS2 for Modulating In-Plane Anisotropy of Optical and Transport Properties

by Ganesh Ghimire, Krishna P. Dhakal, Wooseon Choi, Yonas Assefa Esthete, Seon Je Kim, Trang Thu Tran, Hyoyoung Lee£, Heejun Yangγ, Dinh Loc Duong, Young-Min Kim, and Jeongyong Kim

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ACS Nano
DOI: 10.1021/acsnano.1c05316
25 Jul 13:48

Controllable p‐Type Doping of 2D WSe2 via Vanadium Substitution

by Azimkhan Kozhakhmetov, Samuel Stolz, Anne Marie Z. Tan, Rahul Pendurthi, Saiphaneendra Bachu, Furkan Turker, Nasim Alem, Jessica Kachian, Saptarshi Das, Richard G. Hennig, Oliver Gröning, Bruno Schuler, Joshua A. Robinson
Controllable p-Type Doping of 2D WSe2 via Vanadium Substitution

Scalable substitutional vanadium doping of 2D WSe2 is achieved via MOCVD at FEOL and BEOL compatible temperatures. Detailed experimental and the first-principles calculations demonstrate that vanadium dopants introduce discrete acceptor levels that lie within the valance band. Transport measurements further confirm the p-type nature of the vanadium dopants where hole conduction is dominant with increasing the dopant concentration.


Abstract

Scalable substitutional doping of 2D transition metal dichalcogenides is a prerequisite to developing next-generation logic and memory devices based on 2D materials. To date, doping efforts are still nascent. Here, scalable growth and vanadium (V) doping of 2D WSe2 at front-end-of-line and back-end-of-line compatible temperatures of 800 and 400 °C, respectively, is reported. A combination of experimental and theoretical studies confirm that vanadium atoms substitutionally replace tungsten in WSe2, which results in p-type doping via the introduction of discrete defect levels that lie close to the valence band maxima. The p-type nature of the V dopants is further verified by constructed field-effect transistors, where hole conduction becomes dominant with increasing vanadium concentration. Hence, this study presents a method to precisely control the density of intentionally introduced impurities, which is indispensable in the production of electronic-grade wafer-scale extrinsic 2D semiconductors.

25 Jul 13:47

Stable Radicals with Protective Umbrellas Integrated on the Surface of 2D Layered Materials

by Yuanyuan Chen, Jian Peng, Tian Sheng, Ruixuan Qin, Shuqi Dai, Zaifa Shi, Zichao Tang, Laisen Wang, Qinghua Zhang, Bin Han, Liping Sun, Jun Xu, Jian Weng
Stable Radicals with Protective Umbrellas Integrated on the Surface of 2D Layered Materials

An on-surface reaction strategy is developed to integrate radicals with protective umbrellas on 2D layered material surfaces to construct stable and ordered radicals. For example, triethylamine reacts with dichloromethane to form quaternary ammonium salts with further Hofmann elimination to produce diethylmethyleneamine (DEMA) radicals, reacting with black phosphorus (BP) to produce P radicals with DEMA protective umbrellas integrated on BP surface.


Abstract

Radicals are closely related to human life and health and have been widely used in biology, chemistry, functional materials, etc. However, the high reactivity, disorder, and short half-lives limit their wide applications. Therefore, it remains a great challenge to prepare stable and ordered radicals. Herein, radicals are prepared with protective umbrellas (diethylmethyleneamine, DEMA) that are integrated on the surface of 2D layered materials to isolate water and oxygen and enhance the stability of radicals. Taking 2D black phosphorus (BP) as an example: triethylamine reacts with dichloromethane to form quaternary ammonium salts with further Hoffmann elimination to produce DEMA radicals that could react with one electron of a lone pair electrons in P on the surface of BP to produce P radicals, which shows a prolonged half-life of 21 days at room temperature. First-principle calculations and electron paramagnetic resonance fitting confirm that the steric hindrance constructed by dense DEMA passivation layer acts as a protective umbrella and the 2D coupling of P radicals and other P atoms in 2D BP plane to enhance the stability and strong superexchange interaction of P radicals. Furthermore, it is a general strategy to produce stable radicals integrated on the 2D plane.

25 Jul 13:45

[ASAP] Dimensionality-Inhibited Chemical Doping in Two-Dimensional Semiconductors: The Phosphorene and MoS2 from Charge-Correction Method

by Guo-Jun Zhu, Yong-Gang Xu, Xin-Gao Gong, Ji-Hui Yang, and Boris I. Yakobson

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Nano Letters
DOI: 10.1021/acs.nanolett.1c02392
22 Jul 01:28

[ASAP] Kondo Holes in the Two-Dimensional Itinerant Ising Ferromagnet Fe3GeTe2

by Mengting Zhao, Bin-Bin Chen, Yilian Xi, Yanyan Zhao, Hang Xu, Hongrun Zhang, Ningyan Cheng, Haifeng Feng, Jincheng Zhuang, Feng Pan, Xun Xu, Weichang Hao, Wei Li, Si Zhou, Shi Xue Dou, and Yi Du

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Nano Letters
DOI: 10.1021/acs.nanolett.1c01661
20 Jul 11:55

[ASAP] Two-Dimensional All-in-One Sulfide Monolayers Driving Photocatalytic Overall Water Splitting

by Rongrong Pan, Min Hu, Jia Liu, Dongfeng Li, Xiaodong Wan, Hongzhi Wang, Yuemei Li, Xiuming Zhang, Xiuli Wang, Jun Jiang, and Jiatao Zhang

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Nano Letters
DOI: 10.1021/acs.nanolett.1c02008
20 Jul 11:54

[ASAP] Broadband Plasmon-Enhanced Four-Wave Mixing in Monolayer MoS2

by Yunyun Dai, Yadong Wang, Susobhan Das, Shisheng Li, Hui Xue, Ahmadi Mohsen, and Zhipei Sun

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Nano Letters
DOI: 10.1021/acs.nanolett.1c02381
18 Jul 13:33

[ASAP] Resonant Coupling of a Moiré Exciton to a Phonon in a WSe2/MoSe2 Heterobilayer

by Keisuke Shinokita, Yuhei Miyauchi, Kenji Watanabe, Takashi Taniguchi, and Kazunari Matsuda

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Nano Letters
DOI: 10.1021/acs.nanolett.1c00733
14 Jul 01:19

[ASAP] Electron–Phonon and Spin–Lattice Coupling in Atomically Thin Layers of MnBi2Te4

by Jeongheon Choe, David Lujan, Martin Rodriguez-Vega, Zhipeng Ye, Aritz Leonardo, Jiamin Quan, T. Nathan Nunley, Liang-Juan Chang, Shang-Fan Lee, Jiaqiang Yan△, Gregory A. Fiete, Rui He, and Xiaoqin Li

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Nano Letters
DOI: 10.1021/acs.nanolett.1c01719