09 Oct 15:28
Nanoscale, 2021, 13,14807-14813
DOI: 10.1039/D1NR04063D, Paper
Rui Li, Jiawei Jiang, Wenbo Mi, Haili Bai
The exchange interaction and spin-orbit coupling effect lead to the valley polarization and the schematic of anomalous valley Hall effect.
The content of this RSS Feed (c) The Royal Society of Chemistry
27 Aug 08:02
by Aqeel Alrebh and Jean-Luc Meunier
Boron nitride nanosheets (BNNS) are graphene-like materials with large bandgap and excellent
thermal/chemical stability. Current BNNS synthesis methods show low yield and/or purity preventing
effective implementation in real-life applications. This work reports two catalyst-free bottom-up
approaches for BNNS synthesis using induction thermal plasma. High enthalpy and cooling rates of
this plasma allow BNNS to form homogeneously when using solid ammonia borane (AB) as a precursor. In
this case, clusters of B x N y H z nucleate to form particles of critical sizes on which BNNS
propagate while releasing H 2 . Using boron powders instead of AB produces BNNS through a
heterogeneous route. In this case, boron undergoes spheroidization while active nitrogen species
diffuse on the liquid surface to form boron nitride nanowalls which propagate into BNNS. The
operating pressure and nitrogen loading are shown to control BNNS n...
27 Aug 08:02
by Shihong Xie, Anubhab Dey, Wenjing Yan, Zakhar R Kudrynskyi, Nilanthy Balakrishnan, Oleg Makarovsky, Zakhar D Kovalyuk, Eli G Castanon, Oleg Kolosov, Kaiyou Wang and Amalia Patanè
The miniaturization of ferroelectric devices offers prospects for non-volatile memories, low-power
electrical switches and emerging technologies beyond existing Si-based integrated circuits. An
emerging class of ferroelectrics is based on van der Waals (vdW) two-dimensional materials with
potential for nano-ferroelectrics. Here, we report on ferroelectric semiconductor junctions (FSJs)
in which the ferroelectric vdW semiconductor α -In 2 Se 3 is embedded between two single-layer
graphene electrodes. In these two-terminal devices, the ferroelectric polarization of the
nanometre-thick In 2 Se 3 layer modulates the transmission of electrons across the graphene/In 2 Se
3 interface, leading to memristive effects that are controlled by applied voltages and/or by light.
The underlying mechanisms of conduction are examined over a range of temperatures and under light
excitation revealing thermionic injection, tunnelling and ...
27 Aug 08:02
by Inyong Moon, Min Sup Choi, Sungwon Lee, Ankur Nipane, James Hone and Won Jong Yoo
It becomes clear that, in two-dimensional (2D) materials-based devices, sheet resistances underneath
electrodes change due to a metallic contact, leading to substantial errors in determining a transfer
length. Thus, the extraction of transfer length and corresponding contact resistivity must be
revisited to assess the performance of 2D devices. In this study, we present the three different
approaches of determining the contact resistivity in 2D WSe 2 field effect transistors for the first
time by theoretical analysis using the resistive network model as well as electrical measurements
using the contact-end resistance and transfer length methods, based on the followings: (a) contact
resistance multiplied by transfer length ( ##IMG##
[http://ej.iop.org/images/2053-1583/8/4/045019/tdmac1adbieqn1.gif] {${R_{{\text{cf}}}}W \cdot
{L_{{\text{Tk}}}}$} ), (b) integrated contact resistance ( ##IMG## {$\smallint\limits_0^L R \left( x
\right) \cd...}
21 Aug 06:51
by Lingbin Xie
Nature Communications, Published online: 20 August 2021; doi:10.1038/s41467-021-25381-1
Expanding the available materials with moiré superlattices is interesting but also challenging. Here the authors use a one-step hydrothermal approach to synthesis WS2 moiré superlattices with high catalytic activity for hydrogen evolution reaction
20 Aug 09:57
by Muhammad Akram, Harrison LaBollita, Dibyendu Dey, Jesse Kapeghian, Onur Erten, and Antia S. Botana

Nano Letters
DOI: 10.1021/acs.nanolett.1c02096
20 Aug 09:55
by Zhen-Yu Liu, Shuang Qiao, Bing Huang, Qiao-Yin Tang, Zi-Heng Ling, Wen-Hao Zhang, Hui-Nan Xia, Xin Liao, Hu Shi, Wen-Hao Mao, Gui-Lin Zhu, Jing-Tao Lü, and Ying-Shuang Fu

Nano Letters
DOI: 10.1021/acs.nanolett.1c02348
20 Aug 09:50
by Liam S. Farrar, Aimee Nevill, Zhen Jieh Lim, Geetha Balakrishnan, Sara Dale, and Simon J. Bending

Nano Letters
DOI: 10.1021/acs.nanolett.1c00152
20 Aug 09:50
by Qi Zhang, Kyle Hwangbo, Chong Wang, Qianni Jiang, Jiun-Haw Chu, Haidan Wen, Di Xiao, and Xiaodong Xu

Nano Letters
DOI: 10.1021/acs.nanolett.1c02188
20 Aug 09:47
by Abhijeet Kumar, Denis Yagodkin, Nele Stetzuhn, Sviatoslav Kovalchuk, Alexey Melnikov, Peter Elliott, Sangeeta Sharma, Cornelius Gahl, and Kirill I. Bolotin

Nano Letters
DOI: 10.1021/acs.nanolett.1c01538
20 Aug 09:46
by Jawad Hadid, Ivy Colambo, Christophe Boyaval, Nicolas Nuns, Pavel Dudin, Jose Avila, Xavier Wallart and Dominique Vignaud
Hexagonal boron nitride (h-BN) was synthesized by molecular beam epitaxy on polycrystalline Ni foils
using borazine (B 3 N 3 H 6 ) as precursor. Our photoemission analysis shows that several components
of boron and nitrogen are detected, suggesting the complex nature of the bonds noticeably at the
h-BN/Ni interface. The BN thickness was estimated by photoemission and the BN distribution by
time-of-flight secondary ion mass spectroscopy. Due to the catalytic effect of the Ni substrate,
this thickness is self-limited in the range 1–2 layers regardless of the borazine dose. A spatially
resolved photoemission study was carried out before and after transfer of the h-BN on a Si
substrate. It shows that a strong electronic coupling exists at the interface between h-BN and
polycrystalline Ni, not only for (111) grains, which disappears after transfer on Si. In addition,
we highlight the importance of detecting π plasmons in the photoemission spectra to ...
20 Aug 09:37
by F Mahrouche, K Rezouali, Z C Wang, J Fernández-Rossier and A Molina-Sánchez
We study the electronic properties of the heterobilayer of vanadium and iron oxychlorides, VOCl and
FeOCl, two layered air stable van der Waals insulating oxides with different types of
antiferromagnetic order in bulk: VOCl monolayers are ferromagnetic (FM) whereas the FeOCl monolayers
are antiferromagnetic (AF). We use density functional theory calculations, with Hubbard correction
that is found to be needed to describe correctly the insulating nature of these compounds. We
compute the magnetic anisotropy and propose a spin model Hamiltonian. Our calculations show that
interlayer coupling is weak and hence the magnetic order of each monolayers is preserved in the
heterobilayer. Thus, the heterobilayer combines antiferromagnetic and ferromagnetic orders.
Interlayer exchange should lead both to exchange bias and to the emergence of hybrid collective
modes that combine FM and AF magnons. The energy band of the heterobilayer show a type II band
alignment, and feature spin-splitting...
20 Aug 08:39
by Hongyu Tang, Chenshan Gao, Huiru Yang, Leandro Sacco, Robert Sokolovskij, Hongze Zheng, Huaiyu Ye, Sten Vollebregt, Hongyu Yu, Xuejun Fan and Guoqi Zhang
In this paper, tin oxidation (SnO x )/tin-sulfide (SnS) heterostructures are synthesized by the
post-oxidation of liquid-phase exfoliated SnS nanosheets in air. We comparatively analyzed the NO 2
gas response of samples with different oxidation levels to study the gas sensing mechanisms. The
results show that the samples oxidized at 325 °C are the most sensitive to NO 2 gas molecules,
followed by the samples oxidated at 350 °C, 400 °C and 450 °C. The repeatabilities of 350 °C samples
are better than that of 325 °C, and there is almost no shift in the baseline. Thus this work
systematically analyzed the gas sensing performance of SnO x /SnS-based sensor oxidized at 350 °C.
It exhibits a high response of 171% towards 1 ppb NO 2 , a wide detecting range (from 1 ppb to 1
ppm), and an ultra-low theoretical detection limit of 5 ppt, and excellent repeatability at room
temperature. The sensor also shows superior gas selec...
20 Aug 08:39
by V Vitale, K Atalar, A A Mostofi and J Lischner
Twisted bilayers of two-dimensional materials, such as twisted bilayer graphene, often feature flat
electronic bands that enable the observation of electron correlation effects. In this work, we study
the electronic structure of twisted transition metal dichalcogenide homo- and heterobilayers that
are obtained by combining MoS 2 , WS 2 , MoSe 2 and WSe 2 monolayers, and show how flat band
properties depend on the chemical composition of the bilayer as well as its twist angle. We
determine the relaxed atomic structure of the twisted bilayers using classical force fields and
calculate the electronic band structure using a tight-binding model parametrized from
first-principles density-functional theory. We find that the highest valence bands in these systems
can derive either from Γ-point or K/ ##IMG##
[http://ej.iop.org/images/2053-1583/8/4/045010/tdmac15d9ieqn1.gif] {$K^{^{\prime}}$} -point states
of the constituent monola...
20 Aug 08:39
by Peter G Steeneken, Robin J Dolleman, Dejan Davidovikj, Farbod Alijani and Herre S J van der Zant
The dynamics of suspended two-dimensional (2D) materials has received increasing attention during
the last decade, yielding new techniques to study and interpret the physics that governs the motion
of atomically thin layers. This has led to insights into the role of thermodynamic and nonlinear
effects as well as the mechanisms that govern dissipation and stiffness in these resonators. In this
review, we present the current state-of-the-art in the experimental study of the dynamics of 2D
membranes. The focus will be both on the experimental measurement techniques and on the
interpretation of the physical phenomena exhibited by atomically thin membranes in the linear and
nonlinear regimes. We will show that resonant 2D membranes have emerged both as sensitive probes of
condensed matter physics in ultrathin layers, and as sensitive elements to monitor small external
forces or other changes in the environment. New directions for utilizing suspended 2D membranes for
material characte...
20 Aug 08:38
by Sangjun Park, Bo Han, Caroline Boule, Daniel Paget, Alistair C H Rowe, Fausto Sirotti, Takashi Taniguchi, Kenji Watanabe, Cedric Robert, Laurent Lombez, Bernhard Urbaszek, Xavier Marie and Fabian Cadiz
Hyperspectral imaging at cryogenic temperatures is used to investigate exciton and trion propagation
in MoSe 2 monolayers (ML) encapsulated with hexagonal boron nitride (hBN). Under a tightly focused,
continuous-wave laser excitation, the spatial distribution of neutral excitons and charged trions
strongly differ at high excitation densities. Remarkably, in this regime the trion distribution
develops a halo shape, similar to that previously observed in WS 2 ML at room temperature and under
pulsed excitation. In contrast, the exciton distribution only presents a moderate broadening
attributed to a much less pronounced halo. Spatially and spectrally resolved luminescence spectra
reveal the buildup of a significant temperature gradient at high excitation power, that is
attributed to the energy relaxation of photoinduced hot carriers. We show, via a numerical
resolution of the transport equations for excitons and trions, that the halo can be interpreted as
therma...
20 Aug 08:34
by Lei Hu
Nature Communications, Published online: 09 August 2021; doi:10.1038/s41467-021-25119-z
Lillianite materials usually have low thermoelectric efficiency due to the inherently inferior electrical properties. Here, the authors evaluate thermoelectric performances in Pb7Bi4Se13 based lillianites enabled by convergence of nested conduction bands.
20 Aug 08:33
by Carina A. Belvin
Nature Communications, Published online: 10 August 2021; doi:10.1038/s41467-021-25164-8
Previous work has shown the existence of spin-orbit-entangled excitons and their coupling to antiferromagnetism in the correlated insulator NiPS3. Here the authors show that non-equilibrium driving of these excitons produces a transient metallic antiferromagnetic state that cannot be achieved by tuning the temperature in equilibrium.
20 Aug 08:25
by L. Lackner
Nature Communications, Published online: 16 August 2021; doi:10.1038/s41467-021-24925-9
Excitons in atomically thin crystals couple strongly with light. Here, the authors observe lattice polaritons in a tunable open optical cavity at room temperature, with an imprinted photonic lattice strongly coupled to excitons in a WS2 monolayer.
29 Jul 02:50
by Yangkun He
Nature Communications, Published online: 28 July 2021; doi:10.1038/s41467-021-24692-7
Ferromagnetic systems rarely display a large or non-saturating magnetoresistance, due to the low Fermi velocity of the predominant charge carrier. Here, the authors show that MnBi, a ferromagnet, bucks this trend, showing both large and non-saturating magnetoresistance, and high charge carrier motilities.
29 Jul 02:49
by Xiong Yao, Matthew Brahlek, Hee Taek Yi, Deepti Jain, Alessandro R. Mazza, Myung-Geun Han, and Seongshik Oh

Nano Letters
DOI: 10.1021/acs.nanolett.1c01703
25 Jul 13:51
by Ganesh Ghimire, Krishna P. Dhakal, Wooseon Choi, Yonas Assefa Esthete, Seon Je Kim, Trang Thu Tran, Hyoyoung Lee£, Heejun Yangγ, Dinh Loc Duong, Young-Min Kim, and Jeongyong Kim

ACS Nano
DOI: 10.1021/acsnano.1c05316
25 Jul 13:48
by Azimkhan Kozhakhmetov,
Samuel Stolz,
Anne Marie Z. Tan,
Rahul Pendurthi,
Saiphaneendra Bachu,
Furkan Turker,
Nasim Alem,
Jessica Kachian,
Saptarshi Das,
Richard G. Hennig,
Oliver Gröning,
Bruno Schuler,
Joshua A. Robinson
Scalable substitutional vanadium doping of 2D WSe2 is achieved via MOCVD at FEOL and BEOL compatible temperatures. Detailed experimental and the first-principles calculations demonstrate that vanadium dopants introduce discrete acceptor levels that lie within the valance band. Transport measurements further confirm the p-type nature of the vanadium dopants where hole conduction is dominant with increasing the dopant concentration.
Abstract
Scalable substitutional doping of 2D transition metal dichalcogenides is a prerequisite to developing next-generation logic and memory devices based on 2D materials. To date, doping efforts are still nascent. Here, scalable growth and vanadium (V) doping of 2D WSe2 at front-end-of-line and back-end-of-line compatible temperatures of 800 and 400 °C, respectively, is reported. A combination of experimental and theoretical studies confirm that vanadium atoms substitutionally replace tungsten in WSe2, which results in p-type doping via the introduction of discrete defect levels that lie close to the valence band maxima. The p-type nature of the V dopants is further verified by constructed field-effect transistors, where hole conduction becomes dominant with increasing vanadium concentration. Hence, this study presents a method to precisely control the density of intentionally introduced impurities, which is indispensable in the production of electronic-grade wafer-scale extrinsic 2D semiconductors.
25 Jul 13:47
by Yuanyuan Chen,
Jian Peng,
Tian Sheng,
Ruixuan Qin,
Shuqi Dai,
Zaifa Shi,
Zichao Tang,
Laisen Wang,
Qinghua Zhang,
Bin Han,
Liping Sun,
Jun Xu,
Jian Weng
An on-surface reaction strategy is developed to integrate radicals with protective umbrellas on 2D layered material surfaces to construct stable and ordered radicals. For example, triethylamine reacts with dichloromethane to form quaternary ammonium salts with further Hofmann elimination to produce diethylmethyleneamine (DEMA) radicals, reacting with black phosphorus (BP) to produce P radicals with DEMA protective umbrellas integrated on BP surface.
Abstract
Radicals are closely related to human life and health and have been widely used in biology, chemistry, functional materials, etc. However, the high reactivity, disorder, and short half-lives limit their wide applications. Therefore, it remains a great challenge to prepare stable and ordered radicals. Herein, radicals are prepared with protective umbrellas (diethylmethyleneamine, DEMA) that are integrated on the surface of 2D layered materials to isolate water and oxygen and enhance the stability of radicals. Taking 2D black phosphorus (BP) as an example: triethylamine reacts with dichloromethane to form quaternary ammonium salts with further Hoffmann elimination to produce DEMA radicals that could react with one electron of a lone pair electrons in P on the surface of BP to produce P radicals, which shows a prolonged half-life of 21 days at room temperature. First-principle calculations and electron paramagnetic resonance fitting confirm that the steric hindrance constructed by dense DEMA passivation layer acts as a protective umbrella and the 2D coupling of P radicals and other P atoms in 2D BP plane to enhance the stability and strong superexchange interaction of P radicals. Furthermore, it is a general strategy to produce stable radicals integrated on the 2D plane.
25 Jul 13:45
by Guo-Jun Zhu, Yong-Gang Xu, Xin-Gao Gong, Ji-Hui Yang, and Boris I. Yakobson

Nano Letters
DOI: 10.1021/acs.nanolett.1c02392
22 Jul 01:28
by Mengting Zhao, Bin-Bin Chen, Yilian Xi, Yanyan Zhao, Hang Xu, Hongrun Zhang, Ningyan Cheng, Haifeng Feng, Jincheng Zhuang, Feng Pan, Xun Xu, Weichang Hao, Wei Li, Si Zhou, Shi Xue Dou, and Yi Du

Nano Letters
DOI: 10.1021/acs.nanolett.1c01661
20 Jul 11:55
by Rongrong Pan, Min Hu, Jia Liu, Dongfeng Li, Xiaodong Wan, Hongzhi Wang, Yuemei Li, Xiuming Zhang, Xiuli Wang, Jun Jiang, and Jiatao Zhang

Nano Letters
DOI: 10.1021/acs.nanolett.1c02008
20 Jul 11:54
by Yunyun Dai, Yadong Wang, Susobhan Das, Shisheng Li, Hui Xue, Ahmadi Mohsen, and Zhipei Sun

Nano Letters
DOI: 10.1021/acs.nanolett.1c02381
18 Jul 13:33
by Keisuke Shinokita, Yuhei Miyauchi, Kenji Watanabe, Takashi Taniguchi, and Kazunari Matsuda

Nano Letters
DOI: 10.1021/acs.nanolett.1c00733
14 Jul 01:19
by Jeongheon Choe, David Lujan, Martin Rodriguez-Vega, Zhipeng Ye, Aritz Leonardo, Jiamin Quan, T. Nathan Nunley, Liang-Juan Chang, Shang-Fan Lee, Jiaqiang Yan△, Gregory A. Fiete, Rui He, and Xiaoqin Li

Nano Letters
DOI: 10.1021/acs.nanolett.1c01719