Jiuxiang Dai

Nature Communications, Published online: 18 September 2023; doi:10.1038/s41467-023-41330-6

A selector with Au/MoS₂/WSe₂/MoS₂/Au structure is proposed and experimentally demonstrated through the dry transfer method, which exhibits high nonlinearity and current density based on the punch-through mechanism. The one-selector one-resistor cell is also demonstrated by integrating the n-p-n selector and hexagonal boron nitride memory, showing great potential fokr future memory applications.

Abstract

Resistive random access memory (RRAM) crossbar arrays require the highly nonlinear selector with high current density to address a specific memory cell and suppress leakage current through the unselected cell. 3D monolithic integration of RRAM array requires selector devices with a small footprint and low-temperature processing for ultrahigh-density data storage. Here, an ultrathin two-terminal n-p-n selector with 2D transition metal dichalcogenides (TMDs) is designed by a low-temperature transfer method. The van der Waals contact between transferred Au electrodes and TMDs reduces the Fermi level pinning and retains the intrinsic transport behavior of TMDs. The selector with a single type of TMD exhibits a trade-off between current density and nonlinearity depending on the barrier height. By tuning the Schottky barrier height and controlling the thickness of p-type WSe₂ in MoS₂/WSe₂/MoS₂ n-p-n selector for a punch-through transport, the selector shows high nonlinearity (≈ 230) and high current density (2 × 10³ A cm⁻²) simultaneously. The n-p-n selectors are further integrated with a bipolar hexagonal boron nitride memory and calculate the maximum crossbar size of the 2D material-based one-selector one-resistor according to a 10% read margin, which offers the possible realization of future 3D monolithic integration.

Abstract

Self-powered full-spectrum photodetectors (PDs) offer numerous advantages, such as broad application fields, high precision, efficiency, and multi-functionality, which represent a highly promising and potentially valuable class of detectors for future development. However, insensitive response to solar-blind ultraviolet (UV) and complex and expensive preparation processes greatly limit their performance and practical application. In this study, a self-powered full-spectrum Bi₂Se₃/a-Ga₂O₃/p-Si heterojunction PD with high sensitivity for solar-blind UV band prepared by a simple and low-cost two-step synthesis method is presented. Experiments results reveal that the developed PD has an excellent performance, such as high sensitivity from 200 to 850 nm, and a responsivity of 1.38 mA/W as well as a detectivity of 3.22 × 10¹⁰ Jones under 254 nm light at zero bias. Additionally, the unencapsulated device displays exceptional stability and imaging capabilities. It is expected that Bi₂Se₃/a-Ga₂O₃/p-Si heterojunction PD with a simple and low-cost synthesis method has great potential for self-powered full-spectrum photodetectors.

Nature Physics, Published online: 18 September 2023; doi:10.1038/s41567-023-02197-y

Nature Physics, Published online: 18 September 2023; doi:10.1038/s41567-023-02207-z

Atomic manufacturing is a guideline for researchers to precisely synthesize materials, customize their properties, and apply them into advanced applications in demand. Atomic manufacturing has the ability to visualize substances at the atomic level, while manipulating them atom by atom, inducing and promoting chemical reactions, and ultimately obtaining products with specific atomic structures.

Abstract

The quest for cutting-edge materials and devices has necessitated elevated demands for manufacturing methodologies. Atomic manufacturing involves the meticulous design and fabrication of materials and devices at the atomic level, a process that has been facilitated by advancements in comprehending and manipulating atomic behavior. The attainment of atomic manufacturing is dependent on the capacity to precisely manipulate atoms, directing their reactions at will. In this review, five methodologies of atomic fabrication encompassing atomic manipulation, atomic programming, atomic epitaxy, atomic confinement, and atomic assembly are elucidated. Based on this, the utilization of atomic manufacturing in the most advanced domains including energy conversion, energy storage, quantum information technology, and optoelectronic devices is elucidated. Finally, the current challenges and outlook on the forthcoming advancement of atomic manufacturing are presented.

Tubular microtubes of single-crystalline Si nanomembranes for photodetectors are prepared by a releasing and rolling process. The tubular geometry can trap light to improve the photoresponsivity of ultra-thin Si nanomembranes and demonstrate the advantage of wide-angle light coupling. Furthermore, the Si microtubes exhibit obvious polarization angle-dependent light absorption, enabling polarization-sensitive detection in the range of visible to near-infrared.

Abstract

Freestanding single-crystalline nanomembranes and their assembly have broad application potential in photodetectors for integrated chips. However, the release and self-assembly process of single-crystalline semiconductor nanomembranes still remains a great challenge in on-chip processing and functional integration, and photodetectors based on nanomembrane always suffer from limited absorption of nanoscale thickness. Here, a non-destructive releasing and rolling process is employed to prepare tubular photodetectors based on freestanding single-crystalline Si nanomembranes. Spontaneous release and self-assembly are achieved by residual strain introduced by lattice mismatch at the epitaxial interface of Si and Ge, and the intrinsic stress and strain distributions in self-rolled-up Si nanomembranes are analyzed experimentally and computationally. The advantages of light trapping and wide-angle optical coupling are realized by tubular geometry. This Si microtube device achieves reliable Ohmic contact and exhibits a photoresponsivity of over 330 mA W⁻¹, a response time of 370 µs, and a light incident detection angle range of over 120°. Furthermore, the microtubular structure shows a distinct polarization angle-dependent light absorption, with a dichroic ratio of 1.24 achieved at 940 nm. The proposed Si-based microtubes provide new possibilities for the construction of multifunctional chips for integrated circuit ecosystems in the More than Moore era.

Abstract

Two-dimensional (2D) molybdenum disulfide (MoS₂) holds great potential for various applications such as electronic devices, catalysis, lubrication, anti-corrosion and so on. Thermal evaporation is a versatile thin film deposition technique, however, the conventional thermal evaporation techniques face challenges in producing uniform thin films of MoS₂ due to its high melting temperature of 1375 °C. As a result, only thick and rough MoS₂ films can be obtained using these methods. To address this issue, we have designed a vacuum thermal evaporation system specifically for large-scale preparation of MoS₂ thin films. By using K₂MoS₄ as the precursor, we achieved reliable deposition of uniform polycrystalline MoS₂ thin films with a size of 50 mm × 50 mm and controllable thickness ranging from 0.8 to 2.4 nm. This approach also allows for patterned deposition of MoS₂ using shadow masks and sequential deposition of MoS₂ and tungsten disulfide (WS₂), similar to conventional thermal evaporation techniques. Moreover, we have demonstrated the potential applications of the obtained MoS₂ thin films in field effect transistors (FETs), memristors and electrocatalysts for hydrogen evolution reaction (HER).

Phosphorene as a 2D semiconductor material has been the focus of rapidly expanding research activities. This review summarizes the recent progress of phosphorene and its derivatives, paying attention to methods of synthesis, characterizations, and properties, surface functionalization, and potential applications. The prospects and challenges of phosphorene in emerging fields are also discussed.

Abstract

Phosphorene is a 2D phosphorus atomic layer arranged in a honeycomb lattice like graphene but with a buckled structure. Since its exfoliation from black phosphorus in 2014, phosphorene has attracted tremendous research interest both in terms of synthesis and fundamental research, as well as in potential applications. Recently, significant attention in phosphorene is motivated not only by research on its fundamental physical properties as a novel 2D semiconductor material, such as tunable bandgap, strong in-plane anisotropy, and high carrier mobility, but also by the study of its wide range of potential applications, such as electronic, optoelectronic, and spintronic devices, energy conversion and storage devices. However, a lot of avenues remain to be explored including the fundamental properties of phosphorene and its device applications. This review recalls the current state of the art of phosphorene and its derivatives, touching upon topics on structure, synthesis, characterization, properties, stability, and applications. The current needs and future opportunities for phosphorene are also discussed.

2D MBenes stand at the forefront of 2D materials. Here, Mo₂B₂ MBene is obtained via wet-chemical etching and delamination of MoAlB. MBene's two-to-three times faster kinetics is demonstrated in photocatalytic dye decomposition, compared to MXene. MBene required only 30 min of visible light irradiation to entirely decompose dyes, as supported by surface termination, charge carriers' activity, and generating hydroxyl radicals.

Abstract

MBenes are post-MXene materials that contain boron in their structure instead of carbon and nitrogen. This unique composition offers an opportunity to explore the role of boron in the performance of 2D materials. However, wet-chemical etching and delamination of the starting MoAlB phase are challenging due to the persistent bonding of aluminum atoms with their neighboring elements. Herein, it is overcome by processing MoAlB for 24, 48, and 72 h with an aqueous HCl/H₂O₂ solution. The time-wise etching and delamination delivers individual single-to-few layered 48-MBene flakes. The theoretical-to-experimental XRD analysis revealed the best-delaminated 48-MBene having Mo₂B₂ orthorhombic lattice arrangement. The presence of Mo oxide allows direct 1.2 eV and indirect 0.2 eV optical band gaps and outstanding photocatalytic activity in decomposing methylene blue as a model organic contaminant. The 48-MBene photocatalyst achieves about 90% of MB decomposition under ultraviolet and simulated white light irradiation with three times faster kinetics outperforming even hybridized MXenes. In addition, 48-MBene appeared best suited to utilize the full spectrum of visible light into reactive oxygen species. Conversely, 24-MBene and 72-MBene shows incomplete delamination or oxidation, hampering their photocatalytic activity. The obtained results open an experimental pathway to apply MBenes in environmental remediation.

Herein, an effective binary metal precursor co-reaction chemical vapor deposition method to synthesize the self-intercalated V₃S₅ nanosheets is revealed. A phase transition in V₃S₅ crystal appears at 20 K. Importantly, the electron–electron interaction was confirmed in the V₃S₅ nanosheets. This work realizes a new strategy to synthesize 2D intercalated V _x S _y single crystals for fundamental studies and spintronic applications.

Abstract

2D intercalated vanadium chalcogenides have attracted intensive interest based on their physical properties and potential applications. However, controllable synthesis of the intercalated vanadium chalcogenides via chemical vapor deposition is still a big challenge. Here, a binary metal precursor co-reaction growth mechanism to manipulate the evaporation rate of vanadium precursors is reported, thus the intercalated 2D V_{1+ X} S₂ – V₃S₅ single crystal can be controllably synthesized. The quality of 2D V₃S₅ nanosheets is identified by Raman spectroscopy and high-resolution scanning transmission electron microscopy. Interestingly, a phase transition in 2D metallic V₃S₅ nanosheets is observed at 20 K. Meanwhile, the resistance upturn and unsaturated negative magnetoresistance induced by electron–electron interaction is confirmed. This work proposes a new strategy to synthesize the 2D intercalated V _x S _y single crystals with different compositions for studying their excellent properties and potential applications.

Liquid metal synthesis facilitates precise atomic-scale material engineering. An instant-in-air method is presented that introduces oxygen vacancies into 2D bismuth oxide nanosheets, disrupting its centrosymmetry and enabling energy transducing and memory functions. These nanosheets exhibit intriguing piezoelectric, ferroelectric, mechanical, friction, and magnetic properties. These atomically thin, mechanically flexible, memory-capable, power-generating crystals are pivotal for technological progress in devices.

Abstract

Atomically thin, mechanically flexible, memory-functional, and power-generating crystals play a crucial role in the technological advancement of portable devices. However, the adoption of these crystals in such technologies is sometimes impeded by expensive and laborious synthesis methods, as well as the need for large-scale, mechanically stable, and air-stable materials. Here, an instant-in-air liquid metal printing process utilizing liquid bismuth (Bi) is presented, forming naturally occurring, air-stable, atomically thin, mechanically flexible nanogenerators and ferroelectric oxides. Despite the centrosymmetric nature of the monoclinic P21/c system of achieved α-Bi₂O_3-δ the high kinetics of liquid metal synthesis leads to the formation of vacancies that disrupt the symmetry which is confirmed by density functional theory (DFT) calculations. The polarization switching is measured and utilized for ferroelectric nanopatterning. The exceptional attributes of these atomically thin multifunctional stable oxides, including piezoelectricity, mechanical flexibility, and polarizability, present significant opportunities for developing nano-components that can be seamlessly integrated into a wide range of devices.

This review presents various methodologies for the production of solution-processed 2D nanomaterial dispersions with an emphasis on their synthetic strategies. The techniques involved in the fabrication of 2D vdW thin films are discussed for scalable electronic and optoelectronic applications. The potential of scalable 2D vdW thin films in driving advancements in both electronics and optoelectronics is discussed in detail.

Abstract

In the rapidly evolving field of thin-film electronics, the emergence of large-area flexible and wearable devices has been a significant milestone. Although organic semiconductor thin films, which can be manufactured through solution processing, have been identified, their utility is often undermined by their poor stability and low carrier mobility under ambient conditions. However, inorganic nanomaterials can be solution-processed and demonstrate outstanding intrinsic properties and structural stability. In particular, a series of two-dimensional (2D) nanosheet/nanoparticle materials have been shown to form stable colloids in their respective solvents. However, the integration of these 2D nanomaterials into continuous large-area thin with precise control of layer thickness and lattice orientation still remains a significant challenge. This review paper undertakes a detailed analysis of van der Waals thin films, derived from 2D materials, in the advancement of thin-film electronics and optoelectronic devices. The superior intrinsic properties and structural stability of inorganic nanomaterials are highlighted, which can be solution-processed and underscor the importance of solution-based processing, establishing it as a cornerstone strategy for scalable electronic and optoelectronic applications. A comprehensive exploration of the challenges and opportunities associated with the utilization of 2D materials for the next generation of thin-film electronics and optoelectronic devices is presented.

The practical implementation of two-dimensional layered semiconductors with high gauge factors for high-performance piezoresistive strain sensors has been hampered by the lack of scalable, high-quality film and complex transfer-free fabrication techniques. Large-area PdSe₂ films grown directly on polyimide foil via plasma-assisted selenization exhibit highly sensitive and reliable strain sensing. The overall efficacy exceeds that of conventional two-dimensional counterparts. This allows for precise monitoring of physiological parameters including motion, voice, and arterial pulse vibration for human health care.

Abstract

Two-dimensional transition metal dichalcogenides (TMDs) are needed in high-performance piezoresistive sensors due to their strong strain-induced bandgap modification and thereby large gauge factors. However, integrating a conventional high-temperature chemical vapor deposition (CVD)-grown TMD with a flexible substrate necessitates a transfer process that inevitably degrades the sensing properties of the TMDs and increases the overall fabrication complexity. We present a high-performance piezoresistive strain sensor that employs large-area PdSe₂ films grown directly on polyimide (PI) substrates via plasma-assisted selenization of a sputtered Pd film. The reliable strain transfer from the substrate to the PdSe₂ film ensures an outstanding strain-sensing capability of the sensor. Specifically, the sensors have a gauge factor of up to −315 ± 2.1, a response time under 25 ms, a detection limit of 8 × 10⁻⁶, and an exceptional stability of over 10⁴ loading–unloading cycles. By attaching the sensors to the skin surface, we demonstrate their application for measuring physiological parameters in health care monitoring, including motion, voice, and arterial pulse vibration. Furthermore, using the PdSe₂ film sensor combined with deep learning technology, we achieved intelligent recognition of artery temperature from arterial pulse signals with only a 2% difference between predicted and actual temperatures. The excellent sensing performance, together with the advantages of low-temperature fabrication and simple device structure, make the PdSe₂ film sensor promising for wearable electronics and health care sensing systems.

Emerging carbon-based nanoparticles (e.g., carbon dots) have been proven to be promising materials for biological application. This review focuses on current understanding of fluorescence mechanisms, and also summarizes recent advances in synthesis and functionalization of carbon dots. An in-depth analysis of synthetic precursors, surfaces, defects, and energy states is presented in this review.

Abstract

Carbon dots (CDs) being a new type of carbon-based nanomaterial have attracted intensive interest from researchers owing to their excellent biophysical properties. CDs are a class of fluorescent carbon nanomaterials that have emerged as a promising alternative to traditional quantum dots and organic dyes in applications including bioimaging, sensing, and optoelectronics. CDs possess unique optical properties, such as tunable emission, facile synthesis, and low toxicity, making them attractive for many applications in biology, medicine, and environmental areas. The synthesis of CDs is achievable by a variety of methods, including bottom-up and top-down approaches, involving the use of different carbon sources and surface functionalization strategies. However, understanding the fluorescence mechanism of CDs remains a challenge. Various mechanistic models have been proposed to explain their origin of luminescence. This review summarizes the recent developments in the synthesis and functionalization of CDs and provides an overview of the current understanding of the fluorescence mechanism.

Multilayered SnSe₂ nanoplates, grown via chemical vapor deposition under non-steady-state conditions, display distinct symmetry-breaking structures and enhanced second harmonic generation.

Abstract

The use of non-equilibrium growth modes with non-steady dynamics is extensively explored in bulk materials such as amorphous and polycrystalline materials. Yet, research into the non-steady-state (NSS) growth of two-dimensional (2D) materials is still in its infancy. In this study, multilayered tin selenide (SnSe₂) nanoplates are grown by chemical vapor deposition under NSS conditions (modulating carrier gas flow and temperature). Given the facile diffusion and inherent instability of SnSe₂, it proves to be an apt candidate for nucleation and growth in NSS scenarios. This leads to the emergence of SnSe₂ nanoplates with distinct features (self-growth twisting, symmetry transformation, interlayer decoupling, homojunction, and large-area 2D domain), exhibiting pronounced second harmonic generation. The authors’ findings shed light on the growth dynamics of 2D materials, broadening their potential applications in various fields.

A neuromorphic module composed of synapses over neurons is demonstrated by monolithic vertical integration. The synapse at top is a single thin-film transistor (1TFT-synapse) made of poly-crystalline silicon film and the neuron at bottom is another single transistor (1T-neuron) made of single-crystalline silicon. As neuromorphic vision sensing, classification of American Sign Language (ASL) is conducted with the fabricated neuromorphic module.

Abstract

Neuromorphic hardware with a spiking neural network (SNN) can significantly enhance the energy efficiency for artificial intelligence (AI) functions owing to its event-driven and spatiotemporally sparse operations. However, an artificial neuron and synapse based on complex complementary metal-oxide-semiconductor (CMOS) circuits limit the scalability and energy efficiency of neuromorphic hardware. In this work, a neuromorphic module is demonstrated composed of synapses over neurons realized by monolithic vertical integration. The synapse at top is a single thin-film transistor (1TFT-synapse) made of poly-crystalline silicon film and the neuron at bottom is another single transistor (1T-neuron) made of single-crystalline silicon. Excimer laser annealing (ELA) is applied to activate dopants for the 1TFT-synapse at the top and rapid thermal annealing (RTA) is applied to do so for the 1T-neuron at the bottom. Internal electro-thermal annealing (ETA) via the generation of Joule heat is also used to enhance the endurance of the 1TFT-synapse without transferring heat to the 1T-neuron at the bottom. As neuromorphic vision sensing, classification of American Sign Language (ASL) is conducted with the fabricated neuromorphic module. Its classification accuracy on ASL is ≈92.3% even after 204 800 update pulses.

Gastrointestinal Cancers

Ferroptosis, necroptosis, and pyroptosis all contributed to the development of gastrointestinal cancers. The inactivation of GPX4 or inhibition of System Xc- can result in ferroptosis due to the accumulation of lipid peroxides. The binding of cell surface death receptors and ZBP1 could trigger the necrosis. Interaction of PAMP and DAMP with pattern recognition receptors on the cell surface triggers the classical pyroptosis pathway. More details can be found in article number 2300824 by Xudong Zhu and Shenglong Li.

This study takes a multidisciplinary approach to investigate the role of metal/oxide interfacial phenomena, including interface reactions in determining device response, reliability, and oscillation dynamics. A unique Ising Hamiltonian solver based on a simulated array of coupled NbO _x oscillators is also demonstrated and shown to solve a map coloring problem.

Abstract

Devices with volatile memristive switching and self-sustained relaxation oscillations have received significant attention for their use in neuromorphic computing and solving optimization problems. However, obtaining devices with stable response and reliable oscillation remains challenging. This work describes the utility of metal/oxide interlayers in achieving reliable device performance with tuneable characteristics using Nb-Nb₂O₅-Pt structures. Detailed physical characterization of the Nb/Nb₂O₅ interlayer region shows that it consists of a thin, near-stoichiometric Nb₂O₅ and an NbO _x layer with a graded oxygen content. The impact of these interlayers on device performance is assessed by investigating their switching characteristics and oscillation dynamics. It is shown that the presence of the interlayer has a direct impact on the memristive switching mode and parameters threshold switching characteristics parameters. These dependencies are explained with reference to a lumped-element circuit model of the device and shown to be dominated by changes in device resistance caused by interlayer formation. Significantly, stable oscillation with tuneable frequency is obtained by increasing the thickness of the reactive Nb electrode. Then, by simulating an array of coupled oscillators, a unique Hamiltonian solver is demonstrated. These results provide pathways for optimizing volatile memristive switching characteristics and guidance on how such devices can be employed to solve combinatorial optimization problems.

GO-PVA/PVA polymer electret synaptic transistors with good stability and bending resistance are prepared by exploiting the slow polarization effect of dipoles. The devices can simulate various biological synaptic properties such as short-term plasticity, long-term plasticity, and pair-pulse facilitation. Furthermore, the recognition accuracy of images is simulated based on the constructed artificial neural network, which achieves 86.8% for the MNIST dataset.

Abstract

Polymer electret synaptic transistor is a promising three-terminal artificial synaptic device. In this work, the electrical characteristics of the composite insulator and transistor are enhanced by modulating the concentration of the 2D nanofiller graphene oxide (GO) and the stacked film structure based on a polyvinyl alcohol (PVA) matrix. The GO-PVA/PVA polymer electret synaptic transistors before and after dynamic/static bending exhibit typical synaptic characteristics, including short-term plasticity, long-term plasticity, pair-pulse facilitation, spike-timing-dependent plasticity, and “learning–forgetting–relearning” features. Importantly, the device exhibits good cycling stability, uniformity and linearity in the potentiation-depression cycling test, which is beneficial for improving the accuracy of neuromorphic computations. Also, it shows extremely low energy consumption (≈0.32 fJ). The recognition accuracy of images is simulated based on the constructed artificial neural network, which achieves 86.8% for the MNIST dataset. In addition, the devices maintain high recognition accuracy after dynamic/static bending, indicating that the devices are extremely bend-resistant. The GO-PVA/PVA polymer electret synaptic transistor is expected to be a potential candidate for neuromorphic computations and electronic skin.

The present study demonstrates the development of thefirst clananomaterials simultaneously exhibiting multiple efficient nonlinear optical (NLO) processes, nam second harmonic generation, third harmonic generation, and up-conversion photoluminescence. The synthesized nanoparticles are incorporated in 3D-printable polymers, fibers, and inks for anti-counterfeiting, fingerprint detection, biomedical applications, information processing, and thefirst dual-mode NLO optical coding based on parametric and nonparametric processes.

Abstract

Nonlinear optical materials are essential in areas such as nanophotonics, optical information processing, and biomedical imaging. However, nanomaterials employed for these diverse applications to date are efficient only for one type of nonlinear optical activity. Herein, the first multimodal nonlinear optically active class of nanomaterials based on lanthanide-doped lithium niobate nanoparticles, which simultaneously exhibit unprecedentedly efficient second and third harmonic generation, as well as up-conversion photoluminescence, is reported. These dielectric nanoparticles retain their high nonlinear optical conversion efficiency both as powder and as aqueous colloidal solution. The high stability also allows for the fabrication of optically active biocompatible micron-sized fibers and polymer-based 3D-printable objects, as well as for fingerprint detection. Finally, the first 8-bit coding platform purely based on multimodal nonlinear optical activity originating from different parametric and nonparametric processes is demonstrated, showcasing the technological potential of these materials for both anti-counterfeiting and advanced optical information processing.

Large area, 2D MoS₂ films and flakes of different morphologies are synthesized by chemical vapor deposition. The dependence of large area 2D MoS₂ phototransistor performance on film morphology is shown through the correlation of high-resolution spatial maps of Raman, photoluminescence, transmittance, photocurrent, and related properties. Such analysis will enable the advancement of scalable 2D material-based electronics and optoelectronics.

Abstract

2D materials-based device performance is significantly affected by film non-uniformity, especially for large area devices. Here, it investigates the dependence of large area 2D MoS₂ phototransistor performance on film morphology through correlative mapping. Monolayer MoS₂ films are quazi-epitaxially synthesized on C-plane sapphire (Al₂O₃ ) substrates by chemical vapor deposition, and the growth time and molybdenum trioxide MoO₃ precursor volume are varied to obtain variations in film morphology. Raman, photoluminescence, transmittance, and photocurrent maps are generated and compared with each other to obtain a holistic understanding of large area 2D optoelectronic device performance. For example, it shows that the photoluminescence peak shift and intensity can be used to investigate strain and other defects across multiple film morphologies, giving insight into their effects on the photogenerated current in these devices. It also combines photocurrent and absorption maps to generate large area high-resolution external quantum efficiency and internal quantum efficiency maps for the devices. This study demonstrates the benefit of correlative mapping in the understanding and advancement of large area 2D material-based electronic and optoelectronic devices.