Jiuxiang Dai

Herein, an innovative technology is presented that will transform current monolithic and heterogeneous integration by using BEOL-compatible fluidic-assisted self-alignment transfer and integration process. Multi-dimensional integration of III-N optical and electronic devices over 2D materials on CMOS is demonstrated with no epitaxial constraints or different process thermal budgets.

Abstract

Advances in semiconductor technology have been primarily driven by exponentially reducing the size of silicon transistors and pushing the quantum limit. However, continued scaling becomes extremely difficult in accordance with Moore's law. Conversely, recent advances in monolithic and heterogeneous integration by exploring non-group IV materials envision beyond CMOS scaling. This study entails the development of scalable van der Waals (vdW) integration technology by using all CMOS back-end-of-line-compatible processes: vertical 3D and lateral 2D integration of III-N devices, 2D materials (graphene and molybdenum disulfide), and CMOS. Advanced fluidic-assisted self-alignment transfer (FAST) provides a process accuracy of ≈ 32.6 nm as analyzed on a 200 mm wafer scale. The freestanding III-N chips are vdW integrated onto 2D materials, and the vdW interfaced multi-layer graphene successfully functioned as a back-gating interconnect line. Moreover, fidelity of the vdW interface is confirmed by conducting systematic yield, uniformity, and reliability analysis. The unique fourfold rotationally symmetric design of GaN transistors makes them compatible with massive and random FAST processing. GaN-based radio-frequency power and cascode GaN/Si transistors are integrated on silicon-on-insulator-CMOS. The proposed approach affords a remarkable advantage by surpassing the physical limits and facilitating functional diversification, thus advancing the concept of “More than Moore.”

The nanoscale dielectric gap is a critical interlayer in scanning probe microscopy, affecting electrical measurements and observed coercive voltages in ferroelectrics. This study reveals that electrical contact and measurement reliability depend on the dielectric environment, with variations in water and the other dielectric media significantly influencing the outcomes.

Abstract

The dielectric gap between the scanning probe microscopy (SPM) tip and the surface of a ferroelectric using conductive atomic force microscopy and piezoresponse force microscopy (PFM) is investigated. While the gap functions as a dielectric layer, it also allows tunneling current to inject charges into the ferroelectric when a critical loading force between 10–20 µN is applied to a tip with a radius of 25 nm under a bias voltage of 0.5 V. It is observed that the permittivity of the dielectric gap determines the coercive voltage measured by the piezoresponse hysteresis loop. While such studies done in air often produce coercive voltages much larger than those studied for the same materials in capacitor-based studies, the use of high permittivity media such as water (ɛ_r = 79) or silicone oil (ɛ_r = 2.1-2.8) produces coercive fields that more closely match those measured in conventional capacitor-based polarization hysteresis loop measurements. Furthermore, using water as a dielectric medium in PFM imaging enhances the accuracy in extracting the amplitude and phase data from periodically poled lithium niobate crystals. These findings provide insight into the nanoscale phenomena of polarization switching instigated by the SPM tip and provide a pathway to improved quantitative studies.

By proposing a single-cell order-decoupling method and simultaneously manipulating four-dimensional optical parameters (Wavelength, Wavevector Direction, Polarization, and Diffraction Order), a meta-optics storage system accomplishes multidimensional optical encryption. This system achieves up to sixteen-channel multidimensional encrypted holographic images with high quality and exponentially raises the threshold of brute-force decoding, and thus remarkably enhances information security in optical storage.

Abstract

Recent advancements in multidimensional multiplexing have paved the way for meta-optics encryption to be a viable solution to next-generation information storage and encryption security. However, challenges persist in increasing simultaneously modulated dimensions while minimizing structural complexity. Here, a novel single-cell order-decoupling method is proposed for the realization of a multidimensional encrypted meta-optics storage system. By analyzing the mathematic relationships between the phases of different diffraction orders, the detour phase structure is optimized to achieve independent encoding freedom for multiple orders. The proposed multidimensional encrypted meta-optics successfully realize the concurrent modulation of four optical dimensions: i) Wavelength, ii) Wavevector Direction, iii) Polarization, and iv) Diffraction Order. The system achieves up to sixteen-channel meta-holograms with low crosstalk and exponentially raises the threshold of brute-force decoding and thus remarkably enhances the information security in optical storage. It envisioned that the on-chip metasurface-based multidimensional encrypted strategy for augmented reality display functionalities presents promising applications in optical encryption/storage, anti-counterfeiting, and multifunctional photonics integrated circuits.

The coupling strategies between multi-physical fields and photoelectric effects in 2D material-based photodetectors are systematically summarized in this review. It highlights the effects of their synergistic mechanisms on energy band structures, carrier dynamics, and device performance. The article concludes with future research directions, providing a roadmap for developing high-performance intelligent optoelectronic devices.

Abstract

2D materials possess exceptional carrier transport properties and mechanical stability despite their ultrathin nature. In this context, the coupling between polarization fields and photoelectric fields has been proposed to modulate the physical properties of 2D materials, including energy band structure, carrier mobility, as well as the dynamic processes of photoinduced carriers. These strategies have led to significant improvements in the performance, functionality, and integration density of 2D materials -based photodetectors. The present review introduces the coupling of photoelectric field with four fundamental polarization fields, delivered from dielectric, piezoelectric, pyroelectric, and ferroelectric effects, focusing on their synergistic coupling mechanisms, distinctive properties, and technological merits in advanced photodetection applications. More importantly, it sheds light on the new path of material synthesis and novel structure design to improve the efficiency of the coupling strategies in photodetectors. Then, research advances on the synergy of multi-polarization effects and photoelectric effect in the domain of bionic photodetectors are highlighted. Finally, the review outlines the future research perspectives of coupling strategies in 2D materials-based photodetectors and proposes potential solutions to address the challenges issues of this area. This comprehensive overview will guide futural fundamental and applied research that capitalizes on coupling strategies for sensitive and intelligent photodetection.

Anomalous nonlinear magnetoconductivity (NLMC) is demonstrated by manipulating internal magnetic orders in van der Waals magnet CrSBr interfaced by hBN layer. The anomalous NLMC presents multiple resistance states governed by both magnetization vector and Néel vector utilizing the metamagnetic transition of CrSBr. This anomalous NLMC of the engineered CrSBr system promises efficient electrical readout of multiple magnetic information.

Abstract

Nonlinear magnetoconductivity (NLMC) is a nonreciprocal transport response arising in non-centrosymmetric materials. However, this ordinary NLMC signal vanishes at zero magnetic field, limiting its potential for applications. Here, the observation of an anomalous NLMC controlled by internal order parameters such as the magnetization or Néel vectors is reported. This response is achieved by breaking both inversion and time-reversal symmetry in artificial van der Waals heterostructures based on the magnetic CrSBr and insulating hBN. The nonreciprocal signal can be tuned between two different states in ferromagnetic monolayer CrSBr and among four different states in antiferromagnetic bilayer CrSBr, thanks to its metamagnetic transition. Remarkably, this output signal in the ferromagnetic (antiferromagnetic) state of CrSBr is three (one) orders of magnitude higher than those previously measured. A conductivity scaling analysis reveals the Berry connection polarizability as the origin of the anomalous NLMC. The results pave the way for high-frequency rectifiers with magnetically switchable output polarity as well as for an efficient electrical readout of the magnetic state of antiferromagnetic materials.

A defect-assisted multicolor luminescent photonic glass is prepared via borosilicate glass structure regulation. This glass can exhibit continuously adjustable luminescent colors from purple to orange–red under various stimulus conditions and can be applied to multi-dimensional optical anti-counterfeiting. In addition, this glass also has excellent scintillation luminescence properties and can be used for high-resolution X-ray imaging.

Abstract

Rare earth-doped glasses have attracted extensive attention due to their excellent luminescent property. It is of great significance for the development of optical functional glass to obtain unique luminescent properties through glass structural regulation. Here, via structural optimization, multicolor luminescent borosilicate glasses with dual luminescence centers (Ce³⁺ ions and oxygen vacancy defect) are obtained. Leveraging the distinct luminescent traits of these two centers, tunable luminescence colors ranging from purple to orange–red are achieved by varying the excitation wavelength and temperature. Under X-ray excitation, the glasses exhibit one of the highest scintillation luminescence intensities (85.69% of Bi₄Ge₃O₁₂ crystal) among the Ce³⁺-doped glasses reported in recent years, and the imaging resolution (11 LP mm⁻¹) is comparable to CsI:Tl crystal. Capitalizing on their multicolor luminescence characteristics and excellent scintillation performance, a 3D optical anti-counterfeiting scheme and an X-ray imaging model are developed, demonstrating promising practical applications. After being stored under ambient conditions for two years, the luminescent intensity retains more than 98% of its initial value, underscoring the exceptional luminescence stability of the glass. This work not only presents a multifunctional material for high-level anti-counterfeiting and X-ray imaging but also provides insights into borosilicate glass design.

With over 60% of the global population living in cities, smart urbanization is essential. This perspective explores the potential of MXenes, next-generation 2D nanomaterials, in realizing the smart city concept. MXenes' multitasking supports self-sufficient, adaptive technologies, optimizing energy, water, and air resources. Their tunability enables seamless integration into smart city infrastructure, overcoming current limitations in IoT and telemedicine.

Abstract

Currently, over 60% of the world's population lives in cities. Urban living has many advantages but there are also challenges regarding the need for smart urbanization. The next generation of tunable 2D nanomaterials, called MXenes, is the critical enabling technology that can bring the current urban thinking to the next level, called a smart city. The smart city is a novel concept based on a framework of self-sufficient technologies that are interactive and responsive to citizens’ needs. In this perspective, MXene-enabled technologies for sustainable urban development are discussed. They can advance self-sufficient, adaptive, and responsive buildings that can minimize resource consumption, solving the deficiency of essential resources such as clean energy, water, and air. MXenes are at the cutting edge of technological limitations associated with the Internet of Things (IoT) and telemedicine, combining diverse properties and offering multitasking. It is foreseen that MXenes can have a bright future in contributing to the smart city concept. Therefore, the roadmap is presented for demonstrating the practical feasibility of MXenes in the smart city. Altogether, this study promotes the role of MXenes in advancing the well-being of citizens by raising the quality of urban living to the next level.

The integration of 2D materials with molecular chemistry enables precise control over material properties and enhances their functionality. Molecule-transition metal dichalcogenide (mTMD) heterostructures are particularly promising due to their unique electronic, optical, and catalytic properties. This minireview highlights recent progress in mTMD heterostructures, focusing on interface interactions, molecular arrangements, and innovative synthetic methodologies.

Abstract

The integration of 2D materials with molecular chemistry to create molecule-2D material heterostructures presents a compelling strategy for advancing material design and applications. This approach provides precise control over the structure and properties of 2D materials, effectively addressing challenges in their production and fabrication. Among these, molecule-2D transition metal dichalcogenide (mTMD) heterostructures have garnered significant attention due to their distinctive electronic, optical, and catalytic properties, as well as the intriguing emergent states and phenomena resulting from interactions with adjacent molecular and material layers. Achieving the desired electronic and optical properties in these heterostructures hinges on carefully controlling the interactions at the molecule/TMD interfaces. This minireview highlights recent progress in mTMD heterostructures, emphasizing the principles underlying interface interactions, molecular arrangement, and innovative synthetic methodologies.

Molecular dynamics simulations of semi-coherent spinel/corundum interfaces reveals intimate connections between the chemistry of the interface, the misfit dislocation structure, and the properties of these interfaces. In particular, the thermodynamics and kinetics of defects are greatly influenced by the chemistry and structure of the interfaces, highlighting the importance of accounting for misfit dislocations in these systems.

Abstract

Oxide heterointerfaces are extremely common in both natural and artificial composite structures, including corroded structural materials. Often, key properties such as segregation and atomic transport are dictated by the structure of these interfaces. However, despite this critical link, very few heterointerfaces have been studied in any detail at the atomic scale. Here, one important oxide heterointerface is examined, between spinel and corundum, using the chemical system FeCr₂O₄/Cr₂O₃ as a representative and technologically important case. Using atomistic simulation techniques, it is found that the structure, particularly the local chemistry, of the interface depends on the crystal chemistry at the interface. This atomic and chemical structure further impacts important properties such as defect segregation and mass transport. It is found that defects can nucleate at some regions of these interfaces and migrate back and forth across the corundum layer, suggesting high atomic mobility that may be important for the evolution of spinel/corundum composite structures in extreme conditions.

This study demonstrates the successful homoepitaxial growth of single-crystalline β-Ga₂O₃ on on-axis (100) substrates using a van der Waals epitaxial approach. By employing an excess metallic surfactant at high temperatures, twin-free, atomically flat, high-quality thin films are achieved in a half-layer-by-half-layer growth mode. This approach enhances the crystalline quality, making it a promising method for scalable, cost-effective β-Ga₂O₃-based power devices on (100) substrates.

Abstract

Gallium oxide (Ga₂O₃) is a promising wide-bandgap semiconductor for power devices, offering high breakdown voltage and low on-resistance. Among its polymorphs, β-Ga₂O₃ stands out due to the availability of high-quality, large-area single-crystalline substrates, particularly on the (100) surface, grown via melt-based bulk crystal growth. However, the low surface energy of β-Ga₂O₃ (100), akin to 2D materials, presents challenges in homoepitaxy, including poor nucleation and twin formation, which hinder its practical application. This study demonstrates the successful homoepitaxial growth of single-crystalline β-Ga₂O₃ on (100) substrates using a van der Waals epitaxial approach. By introducing an excess surfactant metal in metal-rich conditions at high temperature, a growth regime approximate thermal equilibrium is achieved, enhancing adatom diffusion and suppressing metastable twin phases. This adjustment enables the formation of well-ordered, single-crystalline nuclei and lateral stitching in a half-layer-by-half-layer growth mode, similar to 2D material growth. The result is twin-free, atomically flat, single-crystal thin films on on-axis β-Ga₂O₃ (100) substrates. These findings significantly improve the crystalline quality of epitaxial β-Ga₂O₃ on (100) substrates, demonstrating their potential for scalable production of high-performance, cost-effective β-Ga₂O₃-based power devices, and advancing their feasibility for industrial applications.

Publication date: June 2025

Source: Materials Today, Volume 85

Author(s): Ying Wang, Kai Zhang, Liping Ding, Qian He, Nanyang Wang, Wentao Zheng, Xin Chen, Feng Ding, Yagang Yao

This work describes the development prospects of gas sensors, the structure of MXenes, and the potential sensing mechanism of MXenes gas sensors. Challenges and potential research directions for the application of MXenes in gas sensors are discussed.

Abstract

Gas detection has become a popular research topic in the field of environmental protection and disease detection because of the concerning increase in environmental pollution and human health problems. 2D MXenes are promising candidates for room-temperature gas sensors because of their flexible and adjustable material compositions, high conductivities, high signal-to-noise ratios, and adjustable surface terminations. This paper presents the prospects of gas sensors, structure of MXenes, and potential sensing mechanisms of MXenes-based gas sensors. Applications of Ti₃C₂T_x, V₂CT_x, Nb₂CT_x, and Mo₂CT_x MXenes in gas sensors for the detection of different gases are reviewed, and the challenges and potential research directions for applying MXenes in gas sensors are discussed. This review provides ideas for designing novel sensitive materials by analyzing the potential value of MXenes-based gas sensors in the sensor field.

The environmental occurrence of anthropogenic chemicals, especially persistent micropollutants of per- and poly-fluoroalkyl substances (PFAS) raises pressing concerns for global drinking water safety. Adsorption is an effective technology for removing PFAS, but is limited by unsatisfactory adsorption capacity and efficiency. We report a strategy to attach polyamine adlayers to graphene oxide (GO) nanosheets, that produces highly-charged and monodispersed two-dimensional (2D) adsorbents of a GO nanosheet sandwiched between two 1-nm-thin polyamine adlayers. This adsorbent has a high adsorption capacity for PFAS of ∼3070 mg/g, tens of times greater than that of GO and commercial activated carbon. It also provides almost instant adsorption of a variety of PFAS and reaches 57-95% of its equilibrium capacity in a minute and removes ∼100% of PFAS from contaminated water sources within a few minutes, transforming real-life PFAS-contaminated water into safe drinking water. Experiment and theory show that the planar nature of the 2D adsorbent combined with its abundant surface adsorption sites that electrostatically attract the polar groups of the PFAS, and hydrogen bonding and hydrophobic-hydrophobic interactions with their non-polar groups, account for its ultrahigh adsorption capacity and rapid removal efficiency. We also show that regeneration of the adsorbents removes the adsorbed PFAS and allows its subsequent destruction, demonstrating a closed-loop treatment solution for micropollutant contamination.

Nature Materials, Published online: 07 March 2025; doi:10.1038/s41563-025-02165-2

The number and performance of p-type two-dimensional (2D) semiconductors has been limited. Now, non-layered 2D β-Bi2O3 single crystals are synthesized on a SiO2/Si substrate using a vapour–liquid–solid–solid growth method. Field-effect transistors based on 2D β-Bi2O3 crystals exhibit high hole mobility, on/off current ratio and air stability.

Nature Materials, Published online: 07 March 2025; doi:10.1038/s41563-025-02171-4

A simple method combining thermal activation and electric fields is demonstrated to efficiently generate ordered vacancies in bulk metal oxides, which can be used for broad applications.

Nature Materials, Published online: 07 March 2025; doi:10.1038/s41563-025-02141-w

High-quality, non-layered 2D β-Bi2O3 crystals are grown using a vapour–liquid–solid–solid growth technique. These crystals demonstrate promising properties for p-channel field-effect transistors.

Nature Communications, Published online: 07 March 2025; doi:10.1038/s41467-025-57441-1

The researchers present the integration of a modulator and an optical processor on a single chip based on the TFLN platform, demonstrating a system capable of high RF performance and multifunctionality. The results provide evidence that highly integrated and high-performance microwave photonic circuits are achievable.

The development, working mechanisms, and comparison of various micro-nano fabrication techniques are reviewed, with a particular emphasis on their application in metasurfaces. The advantages and disadvantages of each technique are analyzed, and recent advancements are highlighted. This article will provide technical guidance for researchers in the fabrication of metasurfaces.

Abstract

As a popular artificial composite material emerging in recent years, metasurfaces are one of the most likely devices to break through the volume limitation of conventional optical components due to their compact structure, flexible materials, and high modulation resolution of the beam. With a unique arrangement of units or made of special materials, the metasurface can effectively modulate the incident light's amplitude, phase, polarization, and frequency, thus realizing applications such as communication, imaging, sensing, and beam steering. The interaction of high-resolution structure, periodic arrangement, and unique constituent materials makes it possible to realize these applications, so researchers should choose the appropriate micro-nano processing technologies when designing and preparing the metasurface. This review will present micro-nano processing technologies related to the preparation of metasurfaces, such as electron beam lithography (EBL), femtosecond laser processing, focused ion beam lithography (FIB), additive manufacturing, nanoimprinting, and self-assembly, respectively. In addition, classical lithography techniques such as wet lithography, plasma lithography, deep reactive ion etching (DRIE), and photolithography will be introduced. Their development history and functions are described in detail, and examples of these techniques in preparing micro-nano-structures in different branches are presented, as well as some examples of metasurface preparation using these techniques. In addition, this paper has produced several tables describing these technologies, outlining their resolution, processing materials, advantages and disadvantages, and so on. Hopefully, this review will provide researchers with options and ideas for preparing metasurfaces.

Above-bandgap irradiation at room temperature enables on-demand optical control of defect-driven built-in electric fields in BiFeO₃ thin films, fabricated via scalable, chemical spray pyrolysis. These fields, otherwise “frozen-in,” can cause severe device degradation, including non-switchable polarization, dead layers near interfaces, and polarization relaxation.

Abstract

Achieving reliable performance in advanced ferroelectric thin-film devices depends on effectively controlling ferroelectric imprint—an internal electric field that can cause polarization fatigue and retention loss challenges. This imprint arises from factors such as charged defects, strain, and electrostatic boundary conditions, and thus can be influenced by the chemical environment, growth conditions, and external stimuli like temperature and light. In this work, dynamic optical control of imprint behavior in high-performance BiFeO₃ (BFO) thin films fabricated via low-cost, scalable spray pyrolysis, using above-bandgap light irradiation at room temperature is achieved. Through X-ray photoelectron spectroscopy, transmission electron and scanning probe microscopy, it is revealed that the distribution of charged defects, including Fe²⁺ ions and oxygen vacancies at the interface and bulk, corresponds to the real-space mapping of the “frozen-in” imprint patterns and pristine polarization. Interestingly, while the electrical reversal of the polarization direction leaves the imprint behavior unchanged, it can be finely tuned using the above-band-gap light. This light stimulus generates non-equilibrium photocarriers with much faster kinetics, reducing the internal electric field and enabling polarization reorientation. These results pave the way for optically controlled polarization switching at room temperature, offering exciting possibilities for the development of ferroelectric optoelectronic memory and sensing devices.

This review summarizes a general overview from perovskite single-crystal (SC) film growth to light-emitting applications and strategies to optimize SC perovskite light-emitting diodes (SC-PeLEDs) performance. Challenges and perspectives are proposed further to facilitate performance improvement and practical application of SC-PeLEDs. This review will help researchers develop a new perspective on SC-PeLEDs.

Abstract

Metal halide perovskites (MHPs) show optoelectronic properties that are highly advantageous for light-emitting applications. Compared to polycrystalline (PC) perovskite, single-crystal (SC) perovskite exhibits high carrier mobility, reducing ion migration and suppressing Auger recombination. However, SC perovskite light-emitting diodes (SC-PeLEDs) face the following challenges: i) the growth of high-aspect-ratio SC films; ii) the interfacial contact between the SC light-emitting layers and the carrier transport layers. This review begins with the growth methods of MHP SC thin films. Then, the recent research progress of SC-PeLEDs is summarized, and the strategies for optimizing device performance are also reviewed. Finally, perspectives are proposed further to enhance the performance and practical application of SC-PeLEDs.

This study presents a systematic method for the direct growth of GaN on six-inch silicon substrates without buffers, significantly reducing GaN-to-substrate thermal resistance while maintaining structural quality comparable to buffered approaches. As-grown AlGaN/AlN/GaN heterojunctions on this buffer-less platform demonstrate state-of-the-art 2D electron gas mobilities, paving the way for efficient III-nitride transistors and advancing fundamental research on electron dynamics.

Abstract

Thick metamorphic buffers are considered indispensable for III-V semiconductor heteroepitaxy on large lattice and thermal-expansion mismatched silicon substrates. However, III-nitride buffers in conventional GaN-on-Si high electron mobility transistors (HEMT) impose a substantial thermal resistance, deteriorating device efficiency and lifetime by throttling heat extraction. To circumvent this, a systematic methodology for the direct growth of GaN after the AlN nucleation layer on six-inch silicon substrates is demonstrated using metal-organic vapor phase epitaxy (MOVPE). Crucial growth-stress modulation to prevent epilayer cracking is achieved even without buffers, and threading dislocation densities comparable to those in buffered structures are realized. The buffer-less design yields a GaN-to-substrate thermal resistance of (11 ± 4) m² K GW⁻¹, an order of magnitude reduction over conventional GaN-on-Si and one of the lowest on any non-native substrate. As-grown AlGaN/AlN/GaN heterojunctions on this template show a high-quality 2D electron gas (2DEG) whose room-temperature Hall-effect mobility exceeds 2000 cm² V⁻¹ s⁻¹, rivaling the best-reported values. As further validation, the low-temperature magnetoresistance of this 2DEG shows clear Shubnikov-de-Haas oscillations, a quantum lifetime > 0.180 ps, and tell-tale signatures of spin-splitting. These results could establish a new platform for III-nitrides, potentially enhancing the energy efficiency of power transistors and enabling fundamental investigations into electron dynamics in quasi-2D wide-bandgap systems.

Nature Photonics, Published online: 06 March 2025; doi:10.1038/s41566-025-01632-1

In this Focus issue we highlight a selection of recent developments in super-resolution microscopy.

Nature Reviews Chemistry, Published online: 06 March 2025; doi:10.1038/s41570-025-00700-y

The recent advances in defect engineering of perovskites involving non-destructive ion-substitution mechanisms have shown great promise when it comes to fine-tuning the bandgap of blue light-emitting perovskites. This SN2-like mechanism is highlighted and discussed here.

Author(s): Ray D. Chang, Nana Shumiya, Russell A. McLellan, Yifan Zhang, Matthew P. Bland, Faranak Bahrami, Junsik Mun, Chenyu Zhou, Kim Kisslinger, Guangming Cheng, Basil M. Smitham, Alexander C. Pakpour-Tabrizi, Nan Yao, Yimei Zhu, Mingzhao Liu, Robert J. Cava, Sarang Gopalakrishnan, Andrew A. Houck, and Nathalie P. de Leon

The quantum properties of superconducting qubits might be improved by coating them with a noble metal such as gold.

[Phys. Rev. Lett. 134, 097001] Published Thu Mar 06, 2025