Shared posts

18 Sep 02:21

Magnetic Miniature Soft Robot with Reprogrammable Drug‐Dispensing Functionalities: Toward Advanced Targeted Combination Therapy

by Zilin Yang, Changyu Xu, Jia Xin Lee, Guo Zhan Lum
Magnetic Miniature Soft Robot with Reprogrammable Drug-Dispensing Functionalities: Toward Advanced Targeted Combination Therapy

Miniature robots have great prospects to transform targeted drug delivery. Here, a miniature soft robot is proposed, which can dispense four types of drugs with reprogrammable drug-dispensing sequence and dosage. This soft robot can inspire unprecedented, targeted combination therapy, where multiple drugs must be delivered to various disease sites, each with a specific sequence and dosage of drugs.


Abstract

Miniature robots are untethered actuators, which have great prospects to transform targeted drug delivery because they can potentially deliver high concentrations of medicine to the disease site(s) with minimal complications. However, existing miniature robots cannot perform advanced targeted combination therapy; majority of them can at most transport one type of drug, while those that can carry multiple drugs are unable to change their drug-dispensing sequence and dosage. Furthermore, the latter robots cannot transport more than three types of drugs, selectively dispense their drugs, maintain their mobility, or release their drugs at multiple sites. Here, a millimeter-scale soft robot is proposed, which can be actuated by alternating magnetic fields to dispense four types of drugs with reprogrammable drug-dispensing sequence and dosage (dispensing rates: 0.0992–0.231 µL h−1). This robot has six degrees-of-freedom motions, and it can deliver its drugs to multiple desired sites by rolling and two-anchor crawling across unstructured environments with negligible drug leakage. Such dexterity is highly desirable and unprecedented for miniature robots with drug-dispensing capabilities. The soft robot therefore has great potential to enable advanced targeted combination therapy, where four types of drugs must be delivered to various disease sites, each with a specific sequence and dosage of drugs.

18 Sep 02:20

Scalable Layer‐Controlled Oxidation of Bi2O2Se for Self‐Rectifying Memristor Arrays With sub‐pA Sneak Currents

by Yingjie Zhao, Zhefeng Lou, Jiaming Hu, Zishun Li, Lanxin Xu, Zhe Chen, Zhuokai Xu, Tao Wang, Mengqi Wu, Haoting Ying, Minghao An, Wenbin Li, Xiao Lin, Xiaorui Zheng
Scalable Layer-Controlled Oxidation of Bi2O2Se for Self-Rectifying Memristor Arrays With sub-pA Sneak Currents

Achieving controllable oxidation of single-crystal Bi2O2Se through the development of large-scale UV-assisted intercalative oxidation allowed for the construction of β-Bi2SeO5/Bi2O2Se heterostructures. The β-Bi2SeO5/Bi2O2Se memristor exhibited remarkable self-rectifying memristive performance, including ultra-high ON/OFF and rectification ratios, and nonlinearity. The scalable production of self-rectifying memristor arrays is successfully demonstrated, showcasing sub-pA sneak currents, desirable to minimize cross-talk effects in high-density memristor arrays.


Abstract

Smart memristors with innovative properties are crucial for the advancement of next-generation information storage and bioinspired neuromorphic computing. However, the presence of significant sneak currents in large-scale memristor arrays results in operational errors and heat accumulation, hindering their practical utility. This study successfully synthesizes a quasi-free-standing Bi2O2Se single-crystalline film and achieves layer-controlled oxidation by developing large-scale UV-assisted intercalative oxidation, resulting β-Bi2SeO5/Bi2O2Se heterostructures. The resulting β-Bi2SeO5/Bi2O2Se memristor demonstrates remarkable self-rectifying resistive switching performance (over 105 for ON/OFF and rectification ratios, as well as nonlinearity) in both nanoscale (through conductive atomic force microscopy) and microscale (through memristor array) regimes. Furthermore, the potential for scalable production of self-rectifying β-Bi2SeO5/Bi2O2Se memristor, achieving sub-pA sneak currents to minimize cross-talk effects in high-density memristor arrays is demonstrated. The memristors also exhibit ultrafast resistive switching (sub-100 ns) and low power consumption (1.2 pJ) as characterized by pulse-mode testing. The findings suggest a synergetic effect of interfacial Schottky barriers and oxygen vacancy migration as the self-rectifying switching mechanism, elucidated through controllable β-Bi2SeO5 thickness modulation and theoretical ab initio calculations.

18 Sep 02:20

2D‐Pyroelectric Materials for Waste Thermal Energy Harvesting and Beyond

by Ajay Kumar, Dipankar Mandal
2D-Pyroelectric Materials for Waste Thermal Energy Harvesting and Beyond

This perspective article insights the fundamental of pyroelectricity in 2D materials that exhibits giant pyroelectric responses. It is spotlighting the potential merits to envision the scope of effective transient waste thermal energy harvesting, IR imaging, photodetectors, temperature sensors, bio-medical therapeutics, wastewater treatment, green hydrogen production and CO2 reduction.


Abstract

Polar 2D materials hold the emerging functionalities such as ferro-, piezo-, and pyro-electric properties. On account of infrared-active low bandgap and polar nature at reduced dimensionality, they served as an ideal choice of pyroelectric material. It can cover up a diverse range of applications, such as waste thermal energy harvesting, IR imaging, photodetector, temperature sensors, and several catalytic processes due to the abundance of dynamic thermal fluxes. Recently, 2D pyroelectric materials have manifested a substantial role in thermal energy harvesting. Consequently, it is realized that there are plenty of scopes available to diversify its applicability. Thus, the challenges are spotlighted in this perspective to envision the desired 2D pyroelectric materials to achieve the effective thermal energy harvesting, sensing, and catalytic efficacy. Particularly, the emphasis is given to elucidate the role of spontaneous polarization in 2D materials to ascertain the giant pyroelectricity.

18 Sep 02:19

Decoupled High‐Mobility Graphene on Cu(111)/Sapphire via Chemical Vapor Deposition

by Zewdu M. Gebeyehu, Vaidotas Mišeikis, Stiven Forti, Antonio Rossi, Neeraj Mishra, Alex Boschi, Yurii P. Ivanov, Leonardo Martini, Michal W. Ochapski, Giulia Piccinini, Kenji Watanabe, Takashi Taniguchi, Giorgio Divitini, Fabio Beltram, Sergio Pezzini, Camilla Coletti
Decoupled High-Mobility Graphene on Cu(111)/Sapphire via Chemical Vapor Deposition

The growth via chemical vapor deposition of decoupled graphene on crystalline Cu(111) films deposited on sapphire is introduced. The resulting graphene is lying atop a thin Cu2O layer and is charge neutral, low strained, and easy to transfer. Electrical transport measurements reveal excellent room temperature carrier mobilities, exceeding 105 cm2 V−1 s−1 upon encapsulation in hexagonal boron nitride, thus opening realistic pathways for high-performance next-generation applications.


Abstract

The growth of high-quality graphene on flat and rigid templates, such as metal thin films on insulating wafers, is regarded as a key enabler for technologies based on 2D materials. In this work, the growth of decoupled graphene is introduced via non-reducing low-pressure chemical vapor deposition (LPCVD) on crystalline Cu(111) films deposited on sapphire. The resulting film is atomically flat, with no detectable cracks or ripples, and lies atop of a thin Cu2O layer, as confirmed by microscopy, diffraction, and spectroscopy analyses. Post-growth treatment of the partially decoupled graphene enables full and uniform oxidation of the interface, greatly simplifying subsequent transfer processes, particularly dry-pick up — a task that proves challenging when dealing with graphene directly synthesized on metallic Cu(111). Electrical transport measurements reveal high carrier mobility at room temperature, exceeding 104 cm2 V−1 s−1 on SiO2/Si and 105 cm2 V−1 s−1 upon encapsulation in hexagonal boron nitride (hBN). The demonstrated growth approach yields exceptional material quality, in line with micro-mechanically exfoliated graphene flakes, and thus paves the way toward large-scale production of pristine graphene suitable for high-performance next-generation applications.

18 Sep 02:17

Inkjet‐Printed 2D Heterostructures for Smart Textile Micro‐Supercapacitors

by Md Rashedul Islam, Shaila Afroj, Kostya S. Novoselov, Nazmul Karim
Inkjet-Printed 2D Heterostructures for Smart Textile Micro-Supercapacitors

A range of inkjet-printable 2D material inks is prepared for the fabrication of inkjet-printed, ultra-flexible and machine-washable 2D material heterostructure-based textile micro-supercapacitors. Such micro-supercapacitors demonstrate higher energy (≈18.06 µWh cm‒2) and power densities (≈4333.33 µW cm‒2), as well as ≈82.48% higher areal capacitance with excellent capacitance retention (≈95% after 1000 cycles).


Abstract

Wearable electronic textiles (e-textiles) have emerged as promising healthcare solutions, offering point-of-care diagnostics while maintaining breathability, comfort, durability, and environmental stability with strong mechanical performance. However, the lack of thin and flexible power supplies hinders their practical adoption. In this regard, textile-based micro-energy storage devices present an appealing solution. Inkjet printing offers the capability to produce high-quality prints with sharp details and versatile substrate compatibility, making it an ideal choice for a wide array of printing applications. Here, the preparation of a range of inkjet-printable 2D material inks is reported for the fabrication of ultra-flexible and machine-washable textile micro-supercapacitors. Then 2D material heterostructures are proposed to enhance the performance of textile supercapacitors. This study reveals that a unique combination of highly conductive graphene with an insulator hexagonal boron nitride (h-BN) can enhance the areal capacitance of graphene-based textile supercapacitors by ≈82.48%. The heterostructure-based supercapacitors also demonstrate higher energy (≈18.06 µWh cm−2) and power densities (≈4333.33 µW cm−2) with excellent capacitance retention (≈95% after 1000 cycles). These findings on inkjet-printed heterostructure-based supercapacitors may herald a new era for the future application of high-performance micro-supercapacitors within textile-based wearable technology.

18 Sep 02:13

Cryogenic nano-imaging of second-order moiré superlattices

by Niels C. H. Hesp

Nature Materials, Published online: 10 September 2024; doi:10.1038/s41563-024-01993-y

Second-order superlattices emerging in magic-angle twisted bilayer graphene aligned with hexagonal boron nitride are visualized in real space through cryogenic nano-imaging, revealing the impact of strain and twist-angle variations.
18 Sep 02:11

Magnetic Torque‐Driven All‐Terrain Microrobots

by Qiong Wang, Zhuhua Zhang, Yuhua Wu, Bingyan Li, Yuchong Li, Hongcheng Gu, Zhongze Gu
Magnetic Torque-Driven All-Terrain Microrobots

The magnetically torque-driven all-terrain microrobot (MTMR) designed in this study demonstrates exceptional mobility over various complex terrains. The microrobot also features precise cargo manipulation capabilities, making it potentially valuable for medical applications such as thrombus removal and minimally invasive hemostasis in cases of internal bleeding. This capability offers advanced solutions for minimally invasive surgery in complex environments.


Abstract

All-terrain microrobots possess significant potential in modern medical applications due to their superior maneuverability in complex terrains and confined spaces. However, conventional microrobots often struggle with adaptability and operational difficulties in variable environments. This study introduces a magnetic torque-driven all-terrain multiped microrobot (MTMR) to address these challenges. By coupling the structure's multiple symmetries with different uniform magnetic fields, such as rotating and oscillating fields, the MTMR demonstrates various locomotion modes, including rolling, tumbling, walking, jumping, and their combinations. Experimental results indicate that the robot can navigate diverse terrains, including flat surfaces, steep slopes (up to 75°), and gaps over twice its body height. Additionally, the MTMR performs well in confined spaces, capable of passing through slits (0.1 body length) and low tunnels (0.25 body length). The robot shows potential for clinical applications like minimally invasive hemostasis in internal bleeding and thrombus removal from blood vessels through accurate cargo manipulation capability. Moreover, the MTMR can carry temperature sensors to monitor environmental temperature changes in real time while simultaneously manipulating objects, displaying its potential for in-situ sensing and parallel task implementation. This all-terrain microrobot technology demonstrates notable adaptability and versatility, providing a solid foundation for practical applications in interventional medicine.

18 Sep 02:09

Metastable square Bismuth allotrope oriented by six-fold symmetric mica

by Nan Wu

npj 2D Materials and Applications, Published online: 11 September 2024; doi:10.1038/s41699-024-00495-4

Metastable square Bismuth allotrope oriented by six-fold symmetric mica
18 Sep 02:09

Two-dimensional-lattice-confined single-molecule-like aggregates

by Kang Wang

Nature, Published online: 11 September 2024; doi:10.1038/s41586-024-07925-9

A molecular aggregate formed in a two-dimensional organic–inorganic hybrid perovskite superlattice with a near-equilibrium distance is shown to have a near-unity photoluminescence quantum yield like that of single molecules, despite being in an aggregated state.
18 Sep 02:08

Controllable p- and n-type behaviours in emissive perovskite semiconductors

by Wentao Xiong

Nature, Published online: 11 September 2024; doi:10.1038/s41586-024-07792-4

The charge carrier polarity and concentrations in an emissive perovskite semiconductor can be adjusted by incorporating a molecular dopant widely used for the passivation and structural control of optoelectronic perovskite materials.
18 Sep 02:08

[ASAP] Enhancing the Linear/Nonlinear Optical Properties of MoSe2 via Third-Generation Semiconductor Nanoheterojunctions for Nano-Optoelectronic Devices

by Hong-Xu Cao, Xin-Yu Zheng, Bing-Yin Shi, Yu Liu, Hong-Yu Li, and Guang-Ning Wang

TOC Graphic

ACS Applied Nano Materials
DOI: 10.1021/acsanm.4c03504
18 Sep 02:06

Future optoelectronics unlocked by ‘doping’ strategy

by Fangyuan Jiang

Nature, Published online: 11 September 2024; doi:10.1038/d41586-024-02659-0

A family of semiconductors known as perovskites has great promise for use in optoelectronic devices. A much-needed strategy for adjusting the density of charge carriers in these materials unleashes their potential.
18 Sep 02:04

Decoding the surface of a complex oxide | Science

Atomic force microscopy reveals the elusive structure of the aluminum oxide surface
18 Sep 02:00

[ASAP] Superconductivity in Monolayer Carbon Allotropes with High Thermal Stability

by Kang Xia, Xiaolong Yu, Chi Ding, Qing Lu, Zhongwei Zhang, and Jian Sun

TOC Graphic

Nano Letters
DOI: 10.1021/acs.nanolett.4c02939
18 Sep 02:00

[ASAP] Interlayer Exciton–Phonon Coupling in MoSe2/WSe2 Heterostructures

by Oisín Garrity, Thomas Brumme, Annika Bergmann, Tobias Korn, Patryk Kusch, and Stephanie Reich

TOC Graphic

Nano Letters
DOI: 10.1021/acs.nanolett.4c02757
18 Sep 02:00

[ASAP] Topological van der Waals Contact for Two-Dimensional Semiconductors

by Soheil Ghods, Hyunjin Lee, Jun-Hui Choi, Ji-Yun Moon, Sein Kim, Seung-Il Kim, Hyung Jun Kwun, Mukkath Joseph Josline, Chan Young Kim, Sang Hwa Hyun, Sang Won Kim, Seok-Kyun Son, Taehun Lee, Yoon Kyeung Lee, Keun Heo, Kostya. S. Novoselov, and Jae-Hyun Lee

TOC Graphic

ACS Nano
DOI: 10.1021/acsnano.4c07585
18 Sep 01:57

Systematic Constructing FeOCl/BiVO4 Hetero‐Interfacial Hybrid Photoanodes for Efficient Photoelectrochemical Water Splitting

by Yuxuan Chen, Xiaolin Li, Hao Yang, Yongchao Huang
Systematic Constructing FeOCl/BiVO4 Hetero-Interfacial Hybrid Photoanodes for Efficient Photoelectrochemical Water Splitting

Iron oxychloride (FeOCl) is introduced as a novel cocatalyst simply grafted on BiVO4 to construct an integrated photoanode, enhancing PEC performance. The formation of FeOCl/BiVO4 heterojunction can simultaneously promote the transfer of photogenerated electrons, and improve the separation efficiency and light absorption efficiency.


Abstract

Bismuth vanadate (BiVO4), as a promising photoanode for photoelectrochemical (PEC) water splitting, suffers from poor charge separation efficiency and light absorption efficiency. Herein, iron oxychloride (FeOCl) is introduced as a novel cocatalyst simply grafted on BiVO4 to construct an integrated photoanode, enhancing PEC performance. The optimized FeOCl/BiVO4 photoanode exhibits a superior photocurrent density value of 5.23 mA cm−2 at 1.23 V versus reversible hydrogen electrode (RHE) under AM 1.5G illuminations. From experimental analysis, such high PEC performance is ascribed to the unique properties of FeOCl, facilitating charge transport, increasing light absorption efficiency, and promoting water oxidation kinetics. Density functional theory calculations further confirm that FeOCl optimizes the Gibbs free energy of H and O-containing intermediates (OOH*) during PEC processes, boosting the catalytic kinetics of PEC water splitting. This work presents FeOCl as a promising catalyst for constructing high efficient PEC water-splitting photoanodes.

18 Sep 01:54

Sliding Ferroelectricity Induced Ultrafast Switchable Photovoltaic Response in ε‐InSe Layers

by Yufan Wang, Zhouxiaosong Zeng, Zhiqiang Tian, Cheng Li, Kai Braun, Lanyu Huang, Yang Li, Xinyi Luo, Jiali Yi, Guangcheng Wu, Guixian Liu, Dong Li, Yu Zhou, Mingxing Chen, Xiao Wang, Anlian Pan
Sliding Ferroelectricity Induced Ultrafast Switchable Photovoltaic Response in ε-InSe Layers

This work demonstrates the odd-even layer-dependence of out-of-plane ferroelectricity in ε-InSe. The device based on the ε-InSe achieves an on/off ratio of 10⁴ in ferroelectric tunneling junction and ultrafast bulk photovoltaic response in photodetector in the near-infrared band. Moreover, the photoresponse in ε-InSe can even exceed graphene in the same conditions, confirming the possibility of application in multifunctional devices.


Abstract

2D sliding ferroelectric semiconductors have greatly expanded the ferroelectrics family with the flexibility of bandgap and material properties, which hold great promise for ultrathin device applications that combine ferroelectrics with optoelectronics. Besides the induced different resistance states for non-volatile memories, the switchable ferroelectric polarizations can also modulate the photogenerated carriers for potentially ultrafast optoelectronic devices. Here, it is demonstrated that the room temperature sliding ferroelectricity can be used for ultrafast switchable photovoltaic response in ε-InSe layers. By first-principles calculations and experimental characterizations, it is revealed that the ferroelectricity with out-of-plane (OOP) polarization only exists in even layer ε-InSe. The ferroelectricity is also demonstrated in ε-InSe-based vertical devices, which exhibit high on-off ratios (≈104) and non-volatile storage capabilities. Moreover, the OOP ferroelectricity enables an ultrafast (≈3 ps) bulk photovoltaic response in the near-infrared band, rendering it a promising material for self-powered reconfigurable and ultrafast photodetector. This work reveals the essential role of ferroelectric polarization on the photogenerated carrier dynamics and paves the way for hybrid multifunctional ferroelectric and optoelectronic devices.

18 Sep 01:52

[ASAP] Room-Temperature Two-Dimensional InSe Plasmonic Laser

by Chenyang Li, Qifa Wang, Ruixuan Yi, Xutao Zhang, Xuetao Gan, Kaihui Liu, Jianlin Zhao, and Fajun Xiao

TOC Graphic

Nano Letters
DOI: 10.1021/acs.nanolett.4c03479
18 Sep 01:52

[ASAP] Intrinsic Ferroelectric Switching in Two-Dimensional α-In2Se3

by Liyi Bai, Changming Ke, Zhongshen Luo, Tianyuan Zhu, Lu You, and Shi Liu

TOC Graphic

ACS Nano
DOI: 10.1021/acsnano.4c06619
10 Sep 05:46

Low‐Defect‐Density Monolayer MoS2 Wafer by Oxygen‐Assisted Growth‐Repair Strategy

by Xiaomin Zhang, Jiahan Xu, Aomiao Zhi, Jian Wang, Yue Wang, Wenkai Zhu, Xingjie Han, Xuezeng Tian, Xuedong Bai, Baoquan Sun, Zhongming Wei, Jing Zhang, Kaiyou Wang
Low-Defect-Density Monolayer MoS2 Wafer by Oxygen-Assisted Growth-Repair Strategy

The defect reduction efficiency via a facile “growth-repair” strategy for MoS2 wafers is quantitatively investigated. A low sulfur defect density of 4.28 × 1012 cm−2 is achieved, which is caused by dramatic increase of defect formation energy neighboring substitutional oxygen atoms. The repaired MoS2 shows enhanced electrical and optical properties, paving the way toward future electronic and optoelectronic devices.


Abstract

Atomic chalcogen vacancy is the most commonly observed defect category in two dimensional (2D) transition-metal dichalcogenides, which can be detrimental to the intrinsic properties and device performance. Here a low-defect density, high-uniform, wafer-scale single crystal epitaxial technology by in situ oxygen-incorporated “growth-repair” strategy is reported. For the first time, the oxygen-repairing efficiency on MoS2 monolayers at atomic scale is quantitatively evaluated. The sulfur defect density is greatly reduced from (2.71 ± 0.65) × 1013 down to (4.28 ± 0.27) × 1012 cm−2, which is one order of magnitude lower than reported as-grown MoS2. Such prominent defect deduction is owing to the kinetically more favorable configuration of oxygen substitution and an increase in sulfur vacancy formation energy around oxygen-incorporated sites by the first-principle calculations. Furthermore, the sulfur vacancies induced donor defect states is largely eliminated confirmed by quenched defect-related emission. The devices exhibit improved carrier mobility by more than three times up to 65.2 cm2 V−1 s−1 and lower Schottky barrier height reduced by half (less than 20 meV), originating from the suppressed Fermi-level pinning effect from disorder-induced gap state. The work provides an effective route toward engineering the intrinsic defect density and electronic states through modulating synthesis kinetics of 2D materials.

10 Sep 05:45

[ASAP] Emerging Two-Dimensional Materials for Proton-Based Energy Storage

by Junlei Qi, Kai Bao, Wenbin Wang, Jingkun Wu, Lingzhi Wang, Cong Ma, Zongxiao Wu, and Qiyuan He

TOC Graphic

ACS Nano
DOI: 10.1021/acsnano.4c06737
09 Sep 04:29

Room Temperature Single‐Component Organic Multiferroics with Large Magnetoelectric Coupling: Proficient Approach for Stray‐Magnetic Field Harvesting

by Deepak, Dalip Saini, Sudip Naskar, Dipankar Mandal, Raj Kumar Roy
Room Temperature Single-Component Organic Multiferroics with Large Magnetoelectric Coupling: Proficient Approach for Stray-Magnetic Field Harvesting

A novel supramolecular scaffold with precisely positioned structure-forming and functional units (electrical dipoles and magnetic spins) is designed so that self-assembly results in functional unit organization. The xerogel derived from this organogel exhibits the highest magnetoelectric coupling coefficient (αME ≈ 216 mV Oe−1 cm−1) reported to date for organic materials. This organic multiferroic material efficiently captures and utilizes stray magnetic fields for sustainable energy harvesting.


Abstract

Magnetoelectric materials are highly desirable for technological applications due to their ability to produce electricity under a magnetic field. Among the various types of magnetoelectric materials studied, their organic counterparts provide an opportunity to develop solution-processable, flexible, lightweight, and wearable electronic devices. However, there is a rare choice of solution-processable, flexible, lightweight magnetoelectric materials which has tremendous technological interest. A supramolecular scaffold with precisely positioned structure-forming and functional units (electrical dipoles and magnetic spins) is designed so that self-assembly results in functional unit organization. Structure-forming segments allow these scaffolds to self-assemble into hierarchically ordered structures in nonpolar solvents, creating nanofibrous organogel networks. In particular, the xerogel derived from this organogel exhibits the highest magnetoelectric coupling coefficient (αME ≈ 216 mV Oe−1 cm−1) reported to date for organic materials. This is even greater than commonly envisioned composite materials made of piezoelectric polymers and inorganic magnets. This single-component organic multiferroic material displays ferroelectricity (Tc ≈ 46 °C) and paramagnetic behavior at room temperature. With this, it is demonstrated that the possibilities of effectively harvesting stray magnetic fields that are copiously available in the surroundings and wasted otherwise.

09 Sep 04:28

Laser Patterning for 2D Lateral and Vertical VS2/MoS2 Metal/Semiconducting Heterostructures

by Jingyi Liang, Wen Huang, Zimei Zhang, Xin Li, Pin Lu, Wei Li, Miaomiao Liu, Ying Huangfu, Rong Song, Ruixia Wu, Bo Li, Zhang Lin, Liyuan Chai, Xidong Duan, Jia Li
Laser Patterning for 2D Lateral and Vertical VS2/MoS2 Metal/Semiconducting Heterostructures

Herein, a fast and convenient laser patterning method for preparing patterned 2D lateral/vertical metal/semiconducting VS2/MoS2 (VSe2/WSe2) heterostructures is developed. The obtained patterned vertical van Waals heterostructures (vdWHs) show a similar channel length of ≈420  nm and high-quality contact interfaces. Based on the patterned vdWHs, vdW-contacted MoS2 (WSe2) transistors with relatively high performance can be readily fabricated.


Abstract

2D metal/semiconducting heterostructures have attracted extensive attention for potential applications in future electronic and optoelectronic devices. However, the simple and fast preparation of patterned metal/semiconducting heterostructures with controllable channel lengths still faces challenges. Here, a simple and reliable laser patterning method for preparing patterned lateral/vertical 1T/2H VS2/MoS2 metal/semiconducting heterostructures is reported. Specifically, site-selective etching of VS2 can be realized through the combination of laser radiation and acid solution etching. Further, pre-patterned VS2 nanoplates with edge dangling bonds can offer effective nucleation points for the lateral epitaxial growth of MoS2, thus generating patterned VS2-MoS2 lateral heterostructures. The laser processing method can further be used to create patterned VS2/MoS2 vertical van der Waals (vdWHs), which can only selectively etch the upper layer VS2 while maintaining the intrinsic structure of the bottom layer MoS2. The obtained patterned VS2/MoS2 vdWHs show a similar channel length of ≈420 nm, and the VS2 vdW contact MoS2 transistor is fabricated, delivering an On-state current of 4.01 µA/µm, and carrier mobility of 3.56 cm2 s−1 V−1. This approach is also general for preparing patterned VSe2, VSe2/WSe2 heterostructures.

09 Sep 04:27

Machine Learning and Theoretical Prediction of Highly Spin‐Polarized Cr2COx MXene with Enhanced Curie Temperature

by Jianhui Yang, Fei shi, Cheng Zhou, Shaozheng Zhang, Qiao Sui, Liang Chen
Machine Learning and Theoretical Prediction of Highly Spin-Polarized Cr2COx MXene with Enhanced Curie Temperature

2D magnetic materials with high spin polarization and Curie temperature are ideal for ultrathin spintronic devices. This study, integrating first-principles calculations with machine learning methods, demonstrates that Cr2CO x MXene consistently exhibits high spin polarization and elevated Curie temperatures across various O adsorption configurations. These findings highlight Cr2CO x MXene as a promising candidate for advanced ultrathin spintronic applications.


Abstract

2D magnetic materials with high spin polarization and Curie temperature are highly desirable for ultrathin spintronic devices. This study utilizes first-principles methods to systematically investigate 225 O adsorption configurations, demonstrating that Cr2CO x MXene consistently maintains a long-range-ordered ferromagnetic arrangement with high spin polarization, irrespective of the O adsorption configuration. Most configurations also display Curie temperature (T C) exceeding room temperature, with the possibility of further enhancement by reducing O coverage. Machine learning models are developed to accurately predict O adsorption configurations, exchange interaction energies, and T C. A novel approach of stripping F and OH groups to create Cr2CO x on Cr-based MXene surfaces is proposed to address the difficulty in achieving long-range-ordered magnetic structures by manipulating surface adsorbates in MXene. This approach enhances the ability to control the magnetic properties of MXenes and paves the way for their application in ultrathin spintronic devices.

09 Sep 04:27

Hexagonal Patterns in Diatom Silica Form via a Directional Two‐Step Process

by Zipora Lansky, Diede de Haan, Yuval Piven, Katya Rechav, Assaf Gal
Hexagonal Patterns in Diatom Silica Form via a Directional Two-Step Process

The formation process of nano-patterned biologically-formed silica is investigated using in situ electron microscopy that allows for 3D visualization at the nanometer scale. The data show a two-step process that yields a hexagonal lattice based on the sequential formation of parallel rods, followed by their connection via evenly spaced bridges.


Abstract

Organisms are able to control material patterning down to the nanometer scale. This is exemplified by the intricate geometrical patterns of the silica cell wall of diatoms, a group of unicellular algae. Theoretical and modeling studies propose putative physical and chemical mechanisms to explain morphogenesis of diatom silica. Nevertheless, direct investigations of the underlying formation process are challenging because this process occurs within the confines of the living cell. Here, a method is developed for in situ 3D visualization of silica development in the diatom Stephanopyxis turris, using electron microscopy slice-and-view techniques. The formation of an isotropic hexagonal pattern made of nanoscale pores is documented. Surprisingly, these data reveal a directional process that starts with elongation of silica rods along one of the three equivalent orientations of the hexagonal lattice. Only as a secondary step, these rods are connected by crisscrossing bridges that give rise to the complete hexagonal pattern. These in situ observations combine two known properties of diatom silica, close packing of pores and branching of rods, to a unified process that yields isotropic patterns from an anisotropic background. Future research into diatom morphogenesis should focus on rod elongation and branching as the key for pattern formation.

09 Sep 04:27

High‐Temperature Excitonic Condensation in 2D Lattice

by Yushuo Xu, Yuanyuan Wang, Shiqiang Yu, Dongyue Sun, Ying Dai, Baibiao Huang, Wei Wei
High-Temperature Excitonic Condensation in 2D Lattice

A novel type of spatially indirect exciton in two-dimensional Bi2S2Te monolayer due to its unique structure is identified. The spin-singlet excitons are dipole/parity allowed and feature with small effective mass and large binding energy. High-temperature excitonic Bose–Einstein condensation and superfluidity can be anticipated, offering a fascinating platform for exploring excitonic condensation and the development of excitonic dissipationless nanodevices.


Abstract

Exploration of high-temperature bosonic condensation is of significant importance for the fundamental many-body physics and applications in nanodevices, which, however, remains a huge challenge. Here, in combination of many-body perturbation theory and first-principles calculations, a new-type spatially indirect exciton can be optically generated in two-dimensional (2D) Bi2S2Te because of its unique structure feature. In particular, the spin-singlet spatially indirect excitons in Bi2S2Te monolayer are dipole/parity allowed and reveal befitting characteristics for excitonic condensation, such as small effective mass and satisfied dilute limitation. Based on the layered Bi2S2Te, the possibility of the high-temperature excitonic Bose–Einstein condensation (BEC) and superfluid state in two dimensions, which goes beyond the current paradigms in both experiment and theory, are proved. It should be highlighted that record-high phase transition temperatures of 289.7 and 72.4 K can be theoretically predicted for the excitonic BEC and superfluidity in the atomic thin Bi2S2Te, respectively. It therefore can be confirmed that Bi2S2Te featuring bound bosonic states is a fascinating 2D platform for exploring the high-temperature excitonic condensation and applications in such as quantum computing and dissipationless nanodevices.

09 Sep 04:26

[ASAP] Synergy of Charged Domain Walls in 2D In-Plane Polarized Ferroelectric GeS for Photocatalytic Water Splitting

by Miao Cheng, Yitao Si, Naixu Li, and Jie Guan

TOC Graphic

Journal of the American Chemical Society
DOI: 10.1021/jacs.4c10760
09 Sep 04:25

[ASAP] A Roadmap for Ferroelectric–Antiferroelectric Phase Transition

by Ru-Jian Jiang, Yun-Long Tang, Su-Zhen Liu, Mei-Xiong Zhu, Changji Li, Yan-Peng Feng, Feng-Hui Gong, Jing-Hui Wang, Xiao-Dong Lv, Shuang-Jie Chen, Yu-Jia Wang, Yin-Lian Zhu, and Xiu-Liang Ma

TOC Graphic

Nano Letters
DOI: 10.1021/acs.nanolett.4c03382
09 Sep 04:23

[ASAP] High-Yield Large-Scale Suspended Graphene Membranes over Closed Cavities for Sensor Applications

by Sebastian Lukas, Ardeshir Esteki, Nico Rademacher, Vikas Jangra, Michael Gross, Zhenxing Wang, Ha-Duong Ngo, Manuel Bäuscher, Piotr Mackowiak, Katrin Höppner, Dominique J. Wehenkel, Richard van Rijn, and Max C. Lemme

TOC Graphic

ACS Nano
DOI: 10.1021/acsnano.4c06827