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09 Jul 11:14

Realizing the Intrinsic Anisotropic Growth of 1T′ ReS2 on Selected Au(101) Substrate toward Large‐Scale Single Crystal Fabrication

by Xiaobo Li, Xinyue Dai, Deqi Tang, Xiao Wang, Jinhua Hong, Chao Chen, Yang Yang, Jiangbo Lu, Jianguo Zhu, Zhibin Lei, Kazu Suenaga, Feng Ding, Hua Xu
Realizing the Intrinsic Anisotropic Growth of 1T′ ReS2 on Selected Au(101) Substrate toward Large-Scale Single Crystal Fabrication

Orientation-controlled growth of 1T′ ReS2 is explored via growing it on an Au substrate with different crystal facets. The strong ReS2-Au interaction together with the reduction of lattice symmetry of the Au facet can effectively guide ReS2 domains epitaxial growth toward single crystal with uniform lattice orientation. This is an important step for the orientation-controlled synthesis of low-symmetry 2D crystals.


Abstract

Low-symmetry 2D materials with strong in-plane anisotropy are ideal platforms for building multifunctional optoelectronic devices. However, the random orientations and easy formation of multidomain structures lead to the single-crystal synthesis of these materials remains a big challenge. Herein, for the first time, the orientation-controlled synthesis of ReS2, a typical low-symmetry 2D material, is explored via interface engineering based on the strong interaction between the material and Au substrates with different symmetries. It is revealed that the lattice orientation and growth behavior of ReS2 are closely relevant to the lattice symmetry of Au facets. Single crystal ReS2 domains with two and even one orientations are acquired on the four-fold symmetry Au(001) facet and the two-fold symmetry Au(101) facet, respectively. Combined with density functional theory calculations, it is demonstrated that the synergy of ultra-strong ReS2-Au interfacial coupling and reduction of symmetry of Au facet is critical to realizing its intrinsic anisotropic growth. Furthermore, great enhancement of electrical and photoelectrical performances are acquired on the well-aligned single crystal ReS2 device. The progress achieved in this work provides significant guidance for the controllable synthesis of wafer-scale single crystals of low-symmetry 2D materials for their practical device applications.

09 Jul 11:14

Morphology Control in 2D Carbon Nitrides: Impact of Particle Size on Optoelectronic Properties and Photocatalysis

by Julia Kröger, Alberto Jiménez‐Solano, Gökcen Savasci, Vincent W. h. Lau, Viola Duppel, Igor Moudrakovski, Kathrin Küster, Tanja Scholz, Andreas Gouder, Marie‐Luise Schreiber, Filip Podjaski, Christian Ochsenfeld, Bettina V. Lotsch
Morphology Control in 2D Carbon Nitrides: Impact of Particle Size on Optoelectronic Properties and Photocatalysis

Tuning the particle size of the 2D carbon nitride poly(heptazine imide) enables optimization of photocatalytic hydrogen evolution. It is shown that changes in the particle size affect the overall photocatalytic process in different ways, and the individual contributions of size-related variables on the photocatalytic activity are traced back. This multi-parameter analysis offers design strategies for next generation polymer photocatalysts.


Abstract

The carbon nitride poly(heptazine imide), PHI, has recently emerged as a powerful 2D carbon nitride photocatalyst with intriguing charge storing ability. Yet, insights into how morphology, particle size, and defects influence its photophysical properties are virtually absent. Here, ultrasonication is used to systematically tune the particle size as well as concentration of surface functional groups and study their impact. Enhanced photocatalytic activity correlates with an optimal amount of those defects that create shallow trap states in the optical band gap, promoting charge percolation, as evidenced by time-resolved photoluminescence spectroscopy, charge transport studies, and quantum-chemical calculations. Excessive amounts of terminal defects can act as recombination centers and hence, decrease the photocatalytic activity for hydrogen evolution. Re-agglomeration of small particles can, however, partially restore the photocatalytic activity. The type and amount of trap states at the surface can also influence the deposition of the co-catalyst Pt, which is used in hydrogen evolution experiments. Optimized conditions entail improved Pt distribution, as well as enhanced wettability and colloidal stability. A description of the interplay between these effects is provided to obtain a holistic picture of the size–property–activity relationship in nanoparticulate PHI-type carbon nitrides that can likely be generalized to related photocatalytic systems.

09 Jul 11:13

Vapor Transport Deposition: Vapor Transport Deposition of Highly Efficient Sb2(S,Se)3 Solar Cells via Controllable Orientation Growth (Adv. Funct. Mater. 28/2021)

by Yanlin Pan, Xiaobo Hu, Yixin Guo, Xingyu Pan, Fei Zhao, Guoen Weng, Jiahua Tao, Chunhu Zhao, Jinchun Jiang, Shaoqiang Chen, Pingxiong Yang, Junhao Chu
Vapor Transport Deposition: Vapor Transport Deposition of Highly Efficient Sb2(S,Se)3 Solar Cells via Controllable Orientation Growth (Adv. Funct. Mater. 28/2021)

In article number 2101476, Jiahua Tao, Chunhu Zhao, Pingxiong Yang, and co-workers develop cost-efficient and high-throughput vapor transport deposition (VTD) to precisely control the growth of high quality Sb2(S,Se)3 absorbers. A high power conversion efficiency of 8.17% is achieved, which is the highest ever reported for Sb2(S,Se)3 solar cells fabricated via a VTD method. This work provides a prospective pathway for further improving the performance of Sb2(S,Se)3 solar cells.


09 Jul 10:42

Triboelectric Nanogenerators: Nonpolar Liquid Lubricant Submerged Triboelectric Nanogenerator for Current Amplification via Direct Electron Flow (Adv. Energy Mater. 25/2021)

by Seh‐Hoon Chung, Jihoon Chung, Myunghwan Song, Seonwoo Kim, Dongjun Shin, Zong‐Hong Lin, Bonwook Koo, Dongseob Kim, Jinkee Hong, Sangmin Lee
Triboelectric Nanogenerators: Nonpolar Liquid Lubricant Submerged Triboelectric Nanogenerator for Current Amplification via Direct Electron Flow (Adv. Energy Mater. 25/2021)

In article number 2100936, Dongseob Kim, Jinkee Hong, Sangmin Lee and co-workers report a non-polar liquid lubricant submerged triboelectric nanogenerator which can generate high output and charge commercial batteries by effectively suppressing air breakdown due to the large Debye length of the liquid lubricant. In addition, it is able to reduce friction wear by the lubrication and rolling friction.


09 Jul 10:40

High Performance Ternary Organic Phototransistors with Photoresponse up to 2600 nm at Room Temperature

by Ben Yang, Yan Wang, Li Li, Junyao Zhang, Jianlu Wang, Hanxue Jiao, Dandan Hao, Pu Guo, Sheng Zeng, Zhekun Hua, Jia Huang
High Performance Ternary Organic Phototransistors with Photoresponse up to 2600 nm at Room Temperature

High performance ternary organic phototransistors with a photoresponse up to 2600 nm at room temperature are developed. The device exhibits a photoresponsivity of 2.75 × 106 A W−1 at 2000 nm. Moreover, the functions as synaptic devices are achieved. The overall performance is superior to that of previously reported organic infrared phototransistors.


Abstract

Infrared (IR) photodetection is important for light communications, military, agriculture, and related fields. Organic transistors are investigated as photodetectors. However, due to their large band gap, most organic transistors can only respond to ultraviolet and visible light. Here high performance IR phototransistors with ternary semiconductors of organic donor/acceptor complex and semiconducting single-walled carbon nanotubes (SWCNTs), without deep cooling requirements are developed. Due to both the ultralow intermolecular electronic transition energy of the complex and charge transport properties of SWCNTs, the phototransistor realizes broadband photodetection with photoresponse up to 2600 nm. Moreover, it exhibits outstanding performance under 2000 nm light with photoresponsivity of 2.75 × 106 A W−1, detectivity of 3.12 × 1014 Jones, external quantum efficiency over 108%, and high I photo/I dark ratio of 6.8 × 105. The device exhibits decent photoresponse to IR light even under ultra-weak light intensity of 100 nW cm−2. The response of the phototransistor to blackbody irradiation is demonstrated, which is rarely reported for organic phototransistors. Interestingly, under visible light, the device can also be employed as synaptic devices, and important basic functions are realized. This strategy provides a new guide for developing high performance IR optoelectronics based on organic transistors.

09 Jul 10:34

Ice goes bendy

by Grocholski, B.
09 Jul 10:31

[ASAP] Defect Engineering in Ultrathin SnSe Nanosheets for High-Performance Optoelectronic Applications

by Feng Li, Hualong Chen, Lei Xu, Feng Zhang, Peng Yin, Tingqiang Yang, Tao Shen, Junjie Qi, Yupeng Zhang, Delong Li, Yanqi Ge, and Han Zhang

TOC Graphic

ACS Applied Materials & Interfaces
DOI: 10.1021/acsami.1c05254
09 Jul 10:30

[ASAP] Intrinsic Room-Temperature Ferromagnetism in V2C MXene Nanosheets

by Hao Tan, Chao Wang, Hengli Duan, Jie Tian, Qianqian Ji, Ying Lu, Fengchun Hu, Wei Hu, Guinan Li, Na Li, Yao Wang, Wangsheng Chu, Zhihu Sun, and Wensheng Yan

TOC Graphic

ACS Applied Materials & Interfaces
DOI: 10.1021/acsami.1c07906
09 Jul 10:29

Band gap measurements of monolayer h-BN and insights into carbon-related point defects

by Ricardo Javier Peña Román, Fábio J R Costa Costa, Alberto Zobelli, Christine Elias, Pierre Valvin, Guillaume Cassabois, Bernard Gil, Alex Summerfield, Tin S Cheng, Christopher J Mellor, Peter H Beton, Sergei V Novikov and Luiz F Zagonel
Being a flexible wide band gap semiconductor, hexagonal boron nitride (h-BN) has great potential for technological applications like efficient deep ultraviolet light sources, building block for two-dimensional heterostructures and room temperature single photon emitters in the ultraviolet and visible spectral range. To enable such applications, it is mandatory to reach a better understanding of the electronic and optical properties of h-BN and the impact of various structural defects. Despite the large efforts in the last years, aspects such as the electronic band gap value, the exciton binding energy and the effect of point defects remained elusive, particularly when considering a single monolayer. Here, we directly measured the density of states of a single monolayer of h-BN epitaxially grown on highly oriented pyrolytic graphite, by performing low temperature scanning tunneling microscopy (STM) and spectroscopy (STS). The observed h-BN electronic band gap on defect-free regio...
09 Jul 10:29

Two-dimensional binary metal-oxide quasicrystal approximants

by Ahmad W Huran, Hai-Chen Wang and Miguel A L Marques
We investigate, using a systematic computational approach, the possibility of the existence of two-dimensional quasicrystalline phases of binary metal-oxides. Our approach relies on the construction of the complete two-dimensional binary phase diagram through the use of unbiased global structural prediction methods. We then identify, in the low-energy periodic phases, structural elements that can be used to generate quasicrystalline phases through an inflation process. In this way we obtain chemically consistent two-dimensional quasicrystal approximants of both barium and titanium oxides. In the proposed structures, the metallic sites occupy the vertices of the aperiodic square-triangle tiling, while the oxygen atoms decorate the interior of the polygons. We then study the properties of the approximants, both free-standing and deposited on a metallic substrate. Finally, we discuss in which circumstances the formation of these phases seems to be favored.
09 Jul 10:28

Optically facet-resolved reaction anisotropy in two-dimensional transition metal dichalcogenides

by Myeongin Song, Haneul Kang, Dan Rhodes, Bumho Kim, James Hone and Sunmin Ryu
Quantifying anisotropy in the chemical reactions of mesoscopic crystals has mostly resorted on the combination of electron microscopy and diffraction. In this work, we established crystal-facet-resolved kinetic measurements of oxidation reactions in two-dimensional (2D) transition metal dichalcogenides (TMDs) using optical second-harmonic generation spectroscopy and scanning probe microscopy. We show the in-plane anisotropy of their bond-breaking reactions is governed by their structure and strongly material-dependent among four TMDs. The facet-resolved analysis directly revealed that the reactions proceed fastest (slowest) for chalcogen (metal)-terminated zigzag edges with armchair edges in the middle. The degree of the anisotropy inducing trigonal oxidation patterns was much higher in MoS 2 and MoSe 2 than WS 2 and WSe 2 . Kinetic Wulff construction based on edge-specific reaction rates verified the material-dependent mesoscopic reaction ...
09 Jul 10:26

[ASAP] Giant Enhancement of Continuous Wave Second Harmonic Generation from Few-Layer GaSe Coupled to High-Q Quasi Bound States in the Continuum

by Zhuojun Liu, Jiayi Wang, Bo Chen, Yuming Wei, Wenjing Liu, and Jin Liu

TOC Graphic

Nano Letters
DOI: 10.1021/acs.nanolett.1c01975
09 Jul 10:26

[ASAP] Polymorphism of Segmented Grain Boundaries in Two-Dimensional Transition Metal Dichalcogenides

by Maolin Yu, Chao Zhu, Yongmin He, Jiadong Zhou, Ying Xu, Zheng Liu, Wanlin Guo, and Zhuhua Zhang

TOC Graphic

Nano Letters
DOI: 10.1021/acs.nanolett.1c01156
09 Jul 10:25

[ASAP] Atomic and Electronic Edge Structures of Monolayer Ceria on Pt(111)

by Zhichao Huang, Cheng Han, Yi-Yang Sun, Kai Wu, and Wei Chen

TOC Graphic

The Journal of Physical Chemistry C
DOI: 10.1021/acs.jpcc.1c03682
08 Jul 02:00

2D-MoS2 goes 3D: transferring optoelectronic properties of 2D MoS2 to a large-area thin film

by Melanie Timpel

npj 2D Materials and Applications, Published online: 07 July 2021; doi:10.1038/s41699-021-00244-x

2D-MoS2 goes 3D: transferring optoelectronic properties of 2D MoS2 to a large-area thin film
08 Jul 01:59

Evaporation of Binary-Mixture Liquid Droplets: The Formation of Picoliter Pancakelike Shapes

by Amir A. Pahlavan, Lisong Yang, Colin D. Bain, and Howard A. Stone

Author(s): Amir A. Pahlavan, Lisong Yang, Colin D. Bain, and Howard A. Stone

Droplets made of a mixture of two liquids with different volatilities take on a pancake shape.


[Phys. Rev. Lett. 127, 024501] Published Wed Jul 07, 2021

08 Jul 01:57

[ASAP] Modulation Doping: A Strategy for 2D Materials Electronics

by Dan Wang, Xian-Bin Li, and Hong-Bo Sun

TOC Graphic

Nano Letters
DOI: 10.1021/acs.nanolett.1c02192
08 Jul 01:57

Quantum simulation of 2D antiferromagnets with hundreds of Rydberg atoms

by Pascal Scholl

Nature, Published online: 07 July 2021; doi:10.1038/s41586-021-03585-1

Programmable quantum simulation of two-dimensional antiferromagnets is achieved with up to 196 neutral atoms, and the capability of the platform is demonstrated on square and triangular arrays.
08 Jul 01:53

[ASAP] Growth of (111)-Orientated GdTe and TmTe Thin Films by van der Waals Molecular Beam Epitaxy

by Xinqiang Cai, Zhuocheng Lu, Zhilin Xu, Fanqi Meng, Qinghua Zhang, Lin Gu, Ji Feng, Shuai-Hua Ji, Na Li, and Xi Chen

TOC Graphic

The Journal of Physical Chemistry C
DOI: 10.1021/acs.jpcc.1c04851
08 Jul 01:52

Data Encryption: Advanced Data Encryption ​using 2D Materials (Adv. Mater. 27/2021)

by Chao Wen, Xuehua Li, Tommaso Zanotti, Francesco Maria Puglisi, Yuanyuan Shi, Fernan Saiz, Aleandro Antidormi, Stephan Roche, Wenwen Zheng, Xianhu Liang, Jiaxin Hu, Steffen Duhm, Juan B. Roldan, Tianru Wu, Victoria Chen, Eric Pop, Blas Garrido, Kaichen Zhu, Fei Hui, Mario Lanza
Data Encryption: Advanced Data Encryption ​using 2D Materials (Adv. Mater. 27/2021)

In article 2100185, Mario Lanza and co-workers use 2D multilayer hexagonal boron nitride (h-BN) to fabricate devices that exhibit stable random telegraph noise current signals, and employ them in true random number generator circuits for advanced data encryption. The currents are very stable because they are confined across the few-atoms-wide defects embedded within the crystalline and highly stable h-BN structure, which avoids their lateral propagation.


08 Jul 01:52

Mxene Synthesis: HCl‐Based Hydrothermal Etching Strategy toward Fluoride‐Free MXenes (Adv. Mater. 27/2021)

by Changda Wang, Hongwei Shou, Shuangming Chen, Shiqiang Wei, Yunxiang Lin, Pengjun Zhang, Zhanfeng Liu, Kefu Zhu, Xin Guo, Xiaojun Wu, Pulickel M. Ajayan, Li Song
Mxene Synthesis: HCl-Based Hydrothermal Etching Strategy toward Fluoride-Free MXenes (Adv. Mater. 27/2021)

New synthesis strategies of fluoride-free MXenes beyond Ti3C2T x are imperative to extend 2D MXenes. In article number 2101015, Pulickel M. Ajayan, Li Song, and co-workers simulate the feasibility of etching various MAX materials in HCl solution influenced by temperature and pressure. Fluoride-free Mo2CTx MXene is then obtained with high quality and efficiency via a controllable HCl hydrothermal etching method, which exhibits a modulated energy-storage mechanism.


08 Jul 01:52

[ASAP] Charge Density Wave Vortex Lattice Observed in Graphene-Passivated 1T-TaS2 by Ambient Scanning Tunneling Microscopy

by Michael A. Altvater, Nikhil Tilak, Skandaprasad Rao, Guohong Li, Choong-Jae Won, Sang-Wook Cheong, and Eva Y. Andrei

TOC Graphic

Nano Letters
DOI: 10.1021/acs.nanolett.1c01655
07 Jul 04:54

[ASAP] On-Chip Generation of Ultrafast Current Pulses by Nanolayered Spintronic Terahertz Emitters

by Wolfgang Hoppe, Jonathan Weber, Saban Tirpanci, Oliver Gueckstock, Tobias Kampfrath, and Georg Woltersdorf

TOC Graphic

ACS Applied Nano Materials
DOI: 10.1021/acsanm.1c01449
07 Jul 04:09

A chemisorbed interfacial layer for seeding atomic layer deposition on graphite

Nanoscale, 2021, 13,12327-12341
DOI: 10.1039/D0NR06959K, Paper
Anton Brown, John Greenwood, César J. Lockhart de la Rosa, Miriam C. Rodríguez González, Ken Verguts, Steven Brems, Haodong Zhang, Brandon E. Hirsch, Stefan De Gendt, Annelies Delabie, Matty Caymax, Joan Teyssandier, Steven De Feyter
Chemisorbed molecular layers are used as sacrificial layers for growing uniform and high-quality dielectric layers on graphite and graphene.
The content of this RSS Feed (c) The Royal Society of Chemistry
07 Jul 04:07

Grain‐Boundary Engineering of Monolayer MoS2 for Energy‐Efficient Lateral Synaptic Devices

by Xuewen Wang, Bolun Wang, Qinghua Zhang, Yufei Sun, Enze Wang, Hao Luo, Yonghuang Wu, Lin Gu, Huanglong Li, Kai Liu
Grain-Boundary Engineering of Monolayer MoS2 for Energy-Efficient Lateral Synaptic Devices

With lithography-free, direct-laser-writing-controlled MoS2/MoS2− x O δ grain boundaries, synaptic devices exhibit short-term and long-term plasticity characteristics that are responsive to electric and light stimulation simultaneously, as well as low energy consumption that is over 40 times lower than that of conventional complementary metal–oxide–semiconductor (CMOS) devices.


Abstract

Synaptic devices based on 2D-layered materials have emerged as high-efficiency electronic synapses and neurons for neuromorphic computing. Lateral 2D synaptic devices have the advantages of multiple functionalities by responding to diverse stimuli, but they consume large amounts of energy, far more than the human brain. Moreover, current lateral devices employ several mechanisms based on conductive filaments and grain boundaries (GBs), but their formation is random and difficult to control, also hindering their practical applications. Here, four-terminal, lateral synaptic devices with artificially engineered GBs are reported, which are made from monolayer MoS2. With lithography-free, direct-laser-writing-controlled MoS2/MoS2− x O δ GBs, such synaptic devices exhibit short-term and long-term plasticity characteristics that are responsive to electric and light stimulation simultaneously. This enables detailed simulations of biological learning and cognitive processes as well as image perception and processing. In particular, the device exhibits low energy consumption, similar to that of the human brain and much lower than those of other lateral 2D synaptic devices. This work provides an effective way to fabricate lateral synaptic devices for practical application development and sheds light on controllable electrical state switching for neuromorphic computing.

07 Jul 04:06

Current‐Controlled Topological Magnetic Transformations in a Nanostructured Kagome Magnet

by Wensen Wei, Jin Tang, Yaodong Wu, Yihao Wang, Jialiang Jiang, Junbo Li, Yona Soh, Yimin Xiong, Mingliang Tian, Haifeng Du
Current-Controlled Topological Magnetic Transformations in a Nanostructured Kagome Magnet

Current-controlled topological skyrmion–bubble and skyrmion–stripe transformations are achieved in a reversible and reproducible way by tuning the nanosecond pulsed current amplitude on the order of ≈1010 A m−2, which enables future reliable and energy-efficient manipulation of electromagnetic properties in topological spintronic devices.


Abstract

Topological magnetic charge Q is a fundamental parameter that describes the magnetic domains and determines their intriguing electromagnetic properties. The ability to switch Q in a controlled way by electrical methods allows for flexible manipulation of electromagnetic behavior in future spintronic devices. Here, the room-temperature current-controlled topological magnetic transformations between Q = −1 skyrmions and Q = 0 stripes or type-II bubbles in a kagome crystal Fe3Sn2 are reported. It is shown that reproducible and reversible skyrmion–bubble and skyrmion–stripe transformations can be achieved by tuning the density of nanosecond pulsed current of the order of ≈1010 A m−2. Further numerical simulations suggest that spin-transfer torque combined with Joule thermal heating effects determine the current-induced topological magnetic transformations.

07 Jul 04:03

Robust and High Photoluminescence in WS2 Monolayer through In Situ Defect Engineering

by Qilong Cui, Ziyu Luo, Qirui Cui, Wen Zhu, Hongwei Shou, Chuanqiang Wu, Zhanfeng Liu, Yunxiang Lin, Pengjun Zhang, Shiqiang Wei, Hongxin Yang, Shuangming Chen, Anlian Pan, Li Song
Robust and High Photoluminescence in WS2 Monolayer through In Situ Defect Engineering

Oxygen atoms in situ substitute the intrinsic sulfur monovacancies in the WS2 monolayer, resulting in robust photoluminescence. The enhancement is ascribed to the suppression of nonradiative recombination and the conversion from trion to neutral exciton. Notably, gratifying stability in the ambient condition is achieved due to the repaired saturated coordination bonds at sulfur vacancy sites, which provides more possibilities for specific applications.


Abstract

The photoluminescence quantum yield (PLQY) of the chemical vapor deposition (CVD) grown transition-metal dichalcogenides (TMDs) films is often much lower than their mechanically exfoliated counterparts, making the coexistence of large-area and high PLQY in TMDs monolayer a huge challenge. Here, an in situ defect engineering strategy is reported to fundamentally dilutes the impact of intrinsic sulfur vacancy on tungsten disulfide (WS2) monolayer. By ingeniously incorporating oxygen atoms in the sulfur vacancy sites of WS2 lattice via the CVD method, oxygen doped WS2 monolayer exhibits remarkably improved optical properties. The PLQY is uniformly enhanced by nearly two orders and can reach up to 9.3%, which is even higher than mechanically exfoliated counterparts. Besides, strong W-O bonds endow materials with superior environment stability, and the high PLQY could persist with an endurance of up to 3 months under ambient conditions without any protection. More in-depth insights from the first-principle calculations illustrate that the enhancement mechanism is the synthetic action of the suppression of nonradiative recombination and conversion from trion to neutral, and the excellent stability arises from repaired saturated coordination bonds at sulfur vacancy sites. This method opens up more possibilities for both fundamental exciton physics and optoelectronics applications.

07 Jul 03:59

Revealing the Correlation of OER with Magnetism: A New Descriptor of Curie/Neel Temperature for Magnetic Electrocatalysts

by Xiaoning Li, Ying Bai, Zhenxiang Cheng
Revealing the Correlation of OER with Magnetism: A New Descriptor of Curie/Neel Temperature for Magnetic Electrocatalysts

By comprehensive characterizations and analysis on crystal and electronic structures of La2− x Sr x Co2O6− δ perovskite oxides, the underlying physics for the relevance of magnetism with oxygen evolution reaction is revealed. A facile descriptor of Curie/Neel temperature is developed, which can easily be obtained from magnetization curves.


Abstract

Developing accurate descriptors for oxygen evolution reaction (OER) is of great significance yet challenging, which roots in and also boosts the understanding of its intrinsic mechanisms. Despite various descriptors are reported, it still has limitations in the facile prediction, given that complicated analytical techniques as well as time-consuming modeling and calculations are indispensable. In the present work, strong correlation of magnetic property with OER performance is revealed by in-depth investigations on the crystal and electronic structures. A facile descriptor of Curie/Neel temperature (T C/N) is developed for La2− x Sr x Co2O6− δ perovskite oxides, based on the inference that both magnetism and OER are rooted in the electron exchange interaction. Specifically, both the T C/N and OER activity are proportional to the degree of p-d orbital hybridization, which increases with enlarged bond angle of Co─O─Co and/or increased oxidation of Co. This finding reveals that T C/N from magnetic characterizations is an effective descriptor in designing novel OER electrocatalysts, and interdisciplinary researches are advantageous for revealing the controversial mechanisms of OER process.

07 Jul 03:56

Resistance‐Chiral Anisotropy of Chiral Mesostructured Half‐metallic Fe3O4 Films

by Te Bai, Jing Ai, Jie Ma, Yingying Duan, Lu Han, Jingang Jiang, Shunai Che
Resistance-Chiral Anisotropy of Chiral Mesostructured Half-metallic Fe3O4 Films

We report chiral mesostructured Fe3O4 films exhibiting the chirality-dependent electrical conductivity. Below 30 K, as the half-metallic Fe3O4 is completely spin polarized and the chiral mesostructured Fe3O4 films can act as a spin filter, the transport of spins is chirality-dependent. Thus, the antipodal chiral mesostructured Fe3O4 films exhibited asymmetric responses to the spin transport and resulted in different electrical resistance.


Abstract

Half-metallic materials are theoretically predicted to be metallic and insulating, which have not been confirmed experimentally, and the predictions are still in doubt. We report the resistance-chiral anisotropy (R-ChA), i.e., chirality-dependent electrical conductivity, in chiral mesostructured Fe3O4 films (CMFFs) grown on the substrates via a hydrothermal method using amino acids as symmetry-breaking agents. Two levels of chirality exist in the CMFFs: primary distortion of the crystal lattice forms twisted nanoflakes, and secondary helical stacking of nanoflakes forms fan-shaped nanoplates. At temperatures below 30 K, the CMFFs exhibited metallic conductivity and insulation for one handedness and the other, respectively. The chirality-dependent effective magnetic fields were speculated to stabilize the opposite spin in the antipodal chiral frame, which led to the free transport of electrons in one handedness of the chiral structure and immobility for the other handedness.

07 Jul 03:56

[ASAP] Two-Dimensional Copper Iodide-Based Inorganic–Organic Hybrid Semiconductors: Synthesis, Structures, and Optical and Transport Properties

by Wooseok Ki, Xiuze Hei, Hee Taek Yi, Wei Liu, Simon J. Teat, Mengjun Li, Yang Fang, Vitaly Podzorov, Eric Garfunkel, and Jing Li

TOC Graphic

Chemistry of Materials
DOI: 10.1021/acs.chemmater.1c01421