
Jiuxiang Dai
Shared posts
[ASAP] Prediction of High Curie Temperature, Large Magnetic Crystal Anisotropy, and Carrier Doping-Induced Half-Metallicity in Two-Dimensional Ferromagnetic FeX3 (X = F, Cl, Br, and I) Monolayers
Adding oxides to the 2D toolkit
Nature Materials, Published online: 28 July 2021; doi:10.1038/s41563-021-01048-6
Two-dimensional (2D) metal oxides that can be exfoliated are produced via direct oxidation of their elemental metals, providing a simple and easy way to incorporate these materials in van der Waals heterostructures.Spectroscopic evidence for a gold-coloured metallic water solution
Nature, Published online: 28 July 2021; doi:10.1038/s41586-021-03646-5
Spectroscopic measurements confirm that when water is adsorbed on drops of an alkali alloy at low pressure a gold-coloured metallic layer forms as electrons rapidly move from the drop into the water.Water transformed into shiny, golden metal
Nature, Published online: 28 July 2021; doi:10.1038/d41586-021-02065-w
Electrons from a droplet of sodium and potassium turn water into a metallic material that conducts electricity.[ASAP] Crystal Growth and Characterization of n-GaN in a Multiple Quantum Shell Nanowire-Based Light Emitter with a Tunnel Junction

Ultrasensitive Photodetectors Promoted by Interfacial Charge Transfer from Layered Perovskites to Chemical Vapor Deposition‐Grown MoS2
Ultrasensitive photodetectors with defect tolerance are demonstrated by interfacing layered-perovskite thin films and MoS2 grown by chemical vapor deposition. With the pure crystallographic orientation and type-II band alignment, efficient light absorption and exciton transport in layered perovskites, and ultrafast charge transfer sustain a high responsivity of 2.5 × 104 A W−1, and a specific detectivity of 4.1 × 1014 Jones.
Abstract
Heterostructures for charge-carrier manipulation have laid the foundation of modern optoelectronic devices, such as photovoltaics and photodetectors. High-performance heterostructure devices usually impose stringent requirements on the material quality to sustain efficient carrier transport and charge transfer, thus leading to sophisticated fabrication processes. Here, a simple yet efficient strategy is proposed to develop ultrasensitive photodetectors based on heterostructures of chemical vapor deposition-grown MoS2 and polycrystalline-layered perovskites. The layered perovskites possess pure crystallographic orientation with conductive edges in contact with MoS2, which gives rise to efficient light absorption, exciton diffusion, and interfacial charge transfer. In dark state, the mismatch of work functions of two materials facilitates low dark currents by the depletion of electrons in MoS2. Under light irradiation, efficient exciton diffusion and interfacial charge transfer are realized in the heterostructures with type-II band alignment, which produces drifting electrons in MoS2 and leaves trapped holes in layered perovskites. The photodetectors present suppress noises and boost photocurrents, yielding a champion device with a responsivity of 2.5 × 104 A W−1, and a specific detectivity of 4.1 × 1014 Jones. The results demonstrate a scalable approach for the integration of high-performance devices with high tolerance to defects.
Precise Layer Control and Electronic State Modulation of a Transition Metal Dichalcogenide via Phase‐Transition‐Induced Growth
Phase-transition-induced growth is effective for synthesizing layer-controlled and electronic-state-modulated MoS2 films. The energetically unstable amorphous MoS x O y is efficiently converted to a thermodynamically stable crystalline MoS2 film on a wafer scale with excellent uniformity. The number of layers is precisely controlled layer-by-layer from one to eleven layers, which is applicable in the growth of both intrinsic and heteroatom-inserted MoS2.
Abstract
Wafer-scale growth of transition metal dichalcogenides with precise control over the number of layers, and hence the electronic state is an essential technology for expanding the practical application of 2D materials. Herein, a new growth method, phase-transition-induced growth (PTG), is proposed for the precisely controlled growth of molybdenum disulfide (MoS2) films consisting of one to eleven layers with spatial uniformity on a 2 in. wafer. In this method, an energetically unstable amorphous MoS x O y (a-MoS x O y ) phase is effectively converted to a thermodynamically stable crystalline MoS2 film. The number of MoS2 layers is readily controlled layer-by-layer by controlling the amount of Mo atoms in a-MoS x O y , which is also applicable for the growth of heteroatom-inserted MoS2. The electronic states of intrinsic and Nb-inserted MoS2 with one and four layers grown by PTGare are analyzed based on their work functions. The work function of monolayer MoS2 effectively increases with the substitution of Nb for Mo. As the number of layers increases to four, charge screening becomes weaker, dopant ionization becomes easier, and ultimately the work function increases further. Thus, better electronic state modulation is achieved in a thicker layer, and in this respect, PTG has the advantage of enabling precise control over the film thickness.
Cation Vacancy in Wide Bandgap III‐Nitrides as Single‐Photon Emitter: A First‐Principles Investigation
Neutral cation vacancy in wide bandgap III-nitrides including AlN, GaN, and AlGaN is predicted to be suitable for single-photon emission, it has zero phonon line that lies within the optimal range for transmission in optical fiber and a moderate radiative rate, thereby render it as a promising single-photon emitter for quantum information applications.
Abstract
Single-photon sources based on solid-state material are desirable in quantum technologies. However, suitable platforms for single-photon emission are currently limited. Herein, a theoretical approach to design a single-photon emitter based on defects in solid-state material is proposed. Through group theory analysis and hybrid density functional theory calculation, the charge-neutral cation vacancy in III-V compounds is found to satisfy a unique 5-electron-8-orbital electronic configuration with T d symmetry, which is possible for single-photon emission. Furthermore, it is confirmed that this type of single-photon emitter only exists in wide bandgap III-nitrides among all the III-V compounds. The corresponding photon energy in GaN, AlN, and AlGaN lies within the optimal range for transfer in optical fiber, thereby render the charge-neutral cation vacancy in wide-bandgap III-nitrides as a promising single-photon emitter for quantum information applications.
Investigating the Electrical Properties of Monolayer and Bilayer h‐BNs via Atomic Force Microscopy
The electrical properties of monolayer hexagonal boron nitride (h-BN) and bilayer h-BN are investigated by atomic force microscopy (AFM) technology. The bilayer h-BN showed quite different electrical characteristics from monolayer h-BN. The mechanism that made this difference is investigated. Besides, the effect of load force on electrical characteristics of h-BN with different layers is also studied.
Abstract
Hexagonal boron nitride (h-BN) is one of the most important 2D materials which attracts tremendous attention for the demonstrated great potential applications in optical and electronic devices. However, whether there are significant differences in the electrical properties of h-BN with different layers and its mechanism is not revealed clearly. Based on the atomic force microscopy (AFM) technology, the electrical properties of monolayer h-BN and bilayer h-BN are investigated. It is found that bilayer h-BN shows quite different electrical characteristics from monolayer h-BN. It is proposed that the difference of work functions between monolayer h-BN and bilayer h-BN contributes to the different electrical characteristics. Meanwhile, the interlayer coupling resistance due to coupling between the layers of h-BN also plays a vital role in electron transport. Besides, the effect of load force on electrical characteristics of h-BN with different layers is also investigated. This work provides a new insight to understand the effect of the different layers on electrical properties of h-BN. It is hoped that this valuable experimental data can offer meaningful suggestions for future studies and applications on h-BN and other 2D nanomaterials in general.
[ASAP] High Thermoelectric Performance of Sb2Si2Te6 Monolayers

[ASAP] Hyperspectral Fingerprints for Atomic Layer Mapping of Two-Dimensional Materials with Single-Layer Accuracy

[ASAP] Effect of Stacking Orientation on the Electronic and Optical Properties of Polar 2D III-Nitride Bilayers

[ASAP] Robust Giant Magnetoresistance in 2D Van der Waals Molecular Magnetic Tunnel Junctions

Interlayer electronic coupling on demand in a 2D magnetic semiconductor
Nature Materials, Published online: 26 July 2021; doi:10.1038/s41563-021-01070-8
Interlayer hybridization in 2D van der Waals materials can change their properties. Here, it is shown that the coupling in CrSBr can be changed from switching the magnetic order from antiferromagnetic to ferromagnetic states.Magnetic tunnel junctions hit the buffer
Nature Electronics, Published online: 26 July 2021; doi:10.1038/s41928-021-00626-5
Magnetic tunnel junctions hit the buffer[ASAP] Precursor Concentration Ratio: The Key to Controllable Lateral-to-Standing MoO2 Flake Transition

[ASAP] Doping-Mediated Lattice Engineering of Monolayer ReS2 for Modulating In-Plane Anisotropy of Optical and Transport Properties

Multimodal channel cancer chemotherapy by 2D functional gadolinium metal–organic framework
Controlled direct synthesis of single- to multiple-layer MWW zeolite
Novel 2D CaCl crystals with metallicity, room-temperature ferromagnetism, heterojunction, piezoelectricity-like property and monovalent calcium ions
2D van der Waals Heterojunction of Organic and Inorganic Monolayers for High Responsivity Phototransistors
A highly ordered organic semiconducting self-assembled monolayer (SAM) with transition metal dichalcogenides is integrated into fully 2D organic–inorganic hybrid van der Waals heterostructures. The ordered nature of the SAM results in efficient exciton dissociation at the interface. The phototransistors show a superior photoresponsivity (475 A W−1), which benefits from the precise confinement of charge in the monolayers and a strong photogating effect.
Abstract
Van der Waals (vdW) heterostructures composing of organic molecules with inorganic 2D crystals open the door to fabricate various promising hybrid devices. Here, a fully ordered organic self-assembled monolayer (SAM) to construct hybrid organic–inorganic vdW heterojunction phototransistors for highly sensitive light detection is used. The heterojunctions, formed by layering MoS2 monolayer crystals onto organic [12-(benzo[b]benzo[4,5]thieno[2,3-d]thiophen-2-yl)dodecyl)]phosphonic acid SAM, are characterized by Raman and photoluminescence spectroscopy as well as Kelvin probe force microscopy. Remarkably, this vdW heterojunction transistor exhibits a superior photoresponsivity of 475 A W−1 and enhanced external quantum efficiency of 1.45 × 105%, as well as an extremely low dark photocurrent in the pA range. This work demonstrates that hybridizing SAM with 2D materials can be a promising strategy for fabricating diversified optoelectronic devices with unique properties.
Interface Defect Engineering of MoS2 Monolayer: Interface Defect Engineering of a Large‐Scale CVD‐Grown MoS2 Monolayer via Residual Sodium at the SiO2/Si Substrate (Adv. Mater. Interfaces 14/2021)
In article number 2100428, Sang Wook Han, Soon Cheol Hong, and co-workers uncover that the residual Na cations at the SiO2 substrate during a NaCl-assisted chemical vapor deposition-growth process induce the n-type doping into the large-scale supported uniform MoS2 monolayer. Furthermore, the residual Na cations are electrically moved toward the bottom side of the MoS2 monolayer to cure the interfacial sulfur vacancy defects.
Chiral Helimagnetism and One‐Dimensional Magnetic Solitons in a Cr‐Intercalated Transition Metal Dichalcogenide
Chiral helimagnetism and 1D magnetic solitons are discovered in Cr-intercalated 2H-TaS2. The chiral helimagnetic structure has an initial period of ≈25 nm, and it transforms into a chiral soliton lattice in an external magnetic field. The spatial period evolution of this topological spin texture obeys the chiral sine-Gordon theory, revealing great potential for fast-speed racetrack memories.
Abstract
Chiral magnets endowed with topological spin textures are expected to have promising applications in next-generation magnetic memories. In contrast to the well-studied 2D or 3D magnetic skyrmions, the authors report the discovery of 1D nontrivial magnetic solitons in a transition metal dichalcogenide 2H-TaS2 via precise intercalation of Cr elements. In the synthetic Cr1/3TaS2 (CTS) single crystal, the coupling of the strong spin–orbit interaction from TaS2 and the chiral arrangement of the magnetic Cr ions evoke a robust Dzyaloshinskii–Moriya interaction. A magnetic helix having a short spatial period of ≈25 nm is observed in CTS via Lorentz transmission electron microscopy. In a magnetic field perpendicular to the helical axis, the helical spin structure transforms into a chiral soliton lattice (CSL) with the spin structure evolution being consistent with the chiral sine-Gordon theory, which opens promising perspectives for the application of CSL to fast-speed nonvolatile magnetic memories. This work introduces a new paradigm to soliton physics and provides an effective strategy for seeking novel 2D magnets.
Room‐Temperature Chiral Light‐Emitting Diode Based on Strained Monolayer Semiconductors
A room-temperature electrically tunable chiral light-emitting diode is realized using strained monolayer transition metal dichalcogenides. The strain effects break the threefold rotational symmetry, which results in different amounts of spin recombination at the K/K’ valleys, to generate chiral light emission driven by electric fields. The results provide a new pathway for practical chiral light sources based on monolayer semiconductors.
Abstract
Room-temperature chiral light sources whose optical helicity can be electrically switched are one of the most important devices for future optical quantum information processing. The emerging valley degree of freedom in monolayer semiconductors allows generation of chiral luminescence via valley polarization. However, relevant valley-polarized light-emitting diodes (LEDs) have only been achieved at low temperatures (typically below 80 K). Here, a room-temperature chiral LED with strained transition metal dichalcogenide monolayers is realized. Spatially resolved polarization spectroscopy reveals that strain effects are crucial to yielding robust valley-polarized electroluminescence. The broken threefold rotational symmetry of strained monolayers induce inequivalent valley drifts at the K/K’ valleys, resulting in different amounts of spin recombination driven by electric fields. Based on this scenario, ideally strained conditions are designed for LEDs on flexible substrates, in which the helicity of room-temperature valley-polarized electroluminescence is electrically tuned. The results provide a new pathway for practical chiral light sources based on monolayer semiconductors.
Chiral Phonons and Giant Magneto‐Optical Effect in CrBr3 2D Magnet
Phonon chirality and magneto-optical phenomena in CrBr3 2D magnet are reported. The superposition of doubly degenerate Eg modes results in chiral phonons with PAM of l = ±1, exhibiting isotropic linearly polarized Raman scattering. The non-degenerate Ag modes display a giant magneto-optical effect under an external out-of-plane magnetic field, rotating the plane of polarization of the scattered linearly polarized light.
Abstract
Phonons with chirality determine the optical helicity of inelastic light scattering processes due to their nonzero angular momentum. Here it is shown that 2D magnetic CrBr3 hosts chiral phonons at the Brillouin-zone center. These chiral phonons are linear combinations of the doubly-degenerate Eg phonons, and the phonon eigenmodes exhibit clockwise and counterclockwise rotational vibrations corresponding to angular momenta of l = ± 1. Such Eg chiral phonons completely switch the polarization of incident circularly polarized light. On the other hand, the non-degenerate non-chiral Ag phonons display a giant magneto-optical effect under an external out-of-plane magnetic field, rotating the plane of polarization of the scattered linearly polarized light. The corresponding degree of polarization of the scattered light changes from 91% to −68% as the magnetic field strength increases from 0 to 5 T. In contrast, the chiral Eg modes display no field dependence. The results lay a foundation for the study of phonon chirality and magneto-optical phenomena in 2D magnetic materials, as well as their related applications, such as the phonon Hall effect, topological photonics, and Raman lasing.
Biocompatible Electrodes: Development of Fluorine‐Free Tantalum Carbide MXene Hybrid Structure as a Biocompatible Material for Supercapacitor Electrodes (Adv. Funct. Mater. 30/2021)
In article number 2100015, Sanjiv Dhingra and co-workers demonstrate fluorine-free development of a tantalum carbide MXene-tantalum oxide (TTO) hybrid structure through an innovative and facile protocol. TTO as an efficient biocompatible material for supercapacitor electrodes possesses biocompatibility with different types of human cells, and offers excellent volumetric capacitance, energy/power densities, and cyclability when assembled into a symmetric supercapacitor. It offers excellent promise for future biomedical energy storage devices.
Controllable p‐Type Doping of 2D WSe2 via Vanadium Substitution
Scalable substitutional vanadium doping of 2D WSe2 is achieved via MOCVD at FEOL and BEOL compatible temperatures. Detailed experimental and the first-principles calculations demonstrate that vanadium dopants introduce discrete acceptor levels that lie within the valance band. Transport measurements further confirm the p-type nature of the vanadium dopants where hole conduction is dominant with increasing the dopant concentration.
Abstract
Scalable substitutional doping of 2D transition metal dichalcogenides is a prerequisite to developing next-generation logic and memory devices based on 2D materials. To date, doping efforts are still nascent. Here, scalable growth and vanadium (V) doping of 2D WSe2 at front-end-of-line and back-end-of-line compatible temperatures of 800 and 400 °C, respectively, is reported. A combination of experimental and theoretical studies confirm that vanadium atoms substitutionally replace tungsten in WSe2, which results in p-type doping via the introduction of discrete defect levels that lie close to the valence band maxima. The p-type nature of the V dopants is further verified by constructed field-effect transistors, where hole conduction becomes dominant with increasing vanadium concentration. Hence, this study presents a method to precisely control the density of intentionally introduced impurities, which is indispensable in the production of electronic-grade wafer-scale extrinsic 2D semiconductors.
Experimental Adhesion Energy in van der Waals Crystals and Heterostructures from Atomically Thin Bubbles
Author(s): Elena Blundo, Tanju Yildirim, Giorgio Pettinari, and Antonio Polimeni
The formation of gas-filled bubbles on the surface of van der Waals crystals provides an ideal platform whereby the interplay of the elastic parameters and interlayer forces can be suitably investigated. Here, we combine experimental and numerical efforts to study the morphology of the bubbles at eq...
[Phys. Rev. Lett. 127, 046101] Published Fri Jul 23, 2021
Long-Range Nematic Order in Two-Dimensional Active Matter
Author(s): Benoît Mahault and Hugues Chaté
Working in two space dimensions, we show that the orientational order emerging from self-propelled polar particles aligning nematically is quasi-long-ranged beyond ℓr, the scale associated to induced velocity reversals, which is typically extremely large and often cannot even be measured. Below ℓr, ...
[Phys. Rev. Lett. 127, 048003] Published Fri Jul 23, 2021
[ASAP] Two Phases of Monolayer Tantalum Sulfide on Au(111)
