
Jiuxiang Dai
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[ASAP] Solution-Processed Two-Dimensional Metal Oxide Anticorrosion Nanocoating
Direct Growth of van der Waals Tin Diiodide Monolayers
The great application potentials and challenges in high-performance devices inspire the search for new two-dimensional (2D) van der Waals (vdW) materials. Via molecular beam epitaxy, the vdW SnI2 monolayer is successfully fabricated with a new structure. This SnI2 monolayer is a 2D semiconductor with thickness-dependent properties, which is promising as a building block in future electronics/optoelectronics.
Abstract
Two-dimensional (2D) van der Waals (vdW) materials have garnered considerable attention for their unique properties and potentials in a wide range of fields, which include nano-electronics/optoelectronics, solar energy, and catalysis. Meanwhile, challenges in the approaches toward achieving high-performance devices still inspire the search for new 2D vdW materials with precious properties. In this study, via molecular beam epitaxy, for the first time, the vdW SnI2 monolayer is successfully fabricated with a new structure. Scanning tunneling microscopy/spectroscopy characterization, as corroborated by the density functional theory calculation, indicates that this SnI2 monolayer exhibits a band gap of ≈2.9 eV in the visible purple range, and an indirect- to direct-band gap transition occurs in the SnI2 bilayer. This study provides a new semiconducting 2D material that is promising as a building block in future electronics/optoelectronics.
Ten Years of Progress in the Synthesis and Development of MXenes
The transition metal carbides and nitrides (MXenes) are among the largest 2D material families. MXenes’ unique properties, such as their metal-like electrical conductivity, render them quite useful in a large number of applications including energy storage, optoelectronic, biomedical, communications, and environmental. A brief historical overview of the first 10 years of MXene research and a perspective on their synthesis and future development are provided.
Abstract
Since their discovery in 2011, the number of 2D transition metal carbides and nitrides (MXenes) has steadily increased. Currently more than 40 MXene compositions exist. The ultimate number is far greater and in time they may develop into the largest family of 2D materials known. MXenes’ unique properties, such as their metal-like electrical conductivity reaching ≈20 000 S cm−1, render them quite useful in a large number of applications, including energy storage, optoelectronic, biomedical, communications, and environmental. The number of MXene papers and patents published has been growing quickly. The first MXene generation is synthesized using selective etching of metal layers from the MAX phases, layered transition metal carbides and carbonitrides using hydrofluoric acid. Since then, multiple synthesis approaches have been developed, including selective etching in a mixture of fluoride salts and various acids, non-aqueous etchants, halogens, and molten salts, allowing for the synthesis of new MXenes with better control over their surface chemistries. Herein, a brief historical overview of the first 10 years of MXene research and a perspective on their synthesis and future development are provided. The fact that their production is readily scalable in aqueous environments, with high yields bodes well for their commercialization.
Hybrid Devices by Selective and Conformal Deposition of PtSe2 at Low Temperatures
Platinum atomic layer deposition and thermal assisted conversion are combined to conformally and selectively coat structured substrates with layered platinum diselenide. The viability of the approach to controllably fabricate hybrid devices with a 2D material is demonstrated by the manufacture of a structured gas sensor and a fully integrated infrared photodetector on a Si-waveguide.
Abstract
2D materials display very promising intrinsic material properties, with multiple applications in electronics, photonics, and sensing. In particular layered platinum diselenide has shown high potential due to its layer-dependent tunable bandgap, low-temperature growth, and high environmental stability. Here, the conformal and area selective (AS) low-temperature growth of layered PtSe2 is presented defining a new paradigm for 2D material integration. The thermally-assisted conversion of platinum which is deposited by AS atomic layer deposition to PtSe2 is demonstrated on various substrates with a distinct 3D topography. Further the viability of the approach is presented by successful on-chip integration of hybrid semiconductor devices, namely by the manufacture of a highly sensitive ammonia sensors channel with 3D topography and fully integrated infrared-photodetectors on silicon photonics waveguides. The presented methodologies of conformal and AS growth therefore lay the foundation for new design routes for the synthesis of more complex hybrid structures with 2D materials.
[ASAP] Elimination of Grain Boundaries in Graphene Growth on a Cu–Ni Alloyed Substrate by Chemical Vapor Deposition

New form of silicon advances semiconductor technology
Publication date: September 2021
Source: Materials Today, Volume 48
Author(s): Laurie Donaldson
MoS2 stacking matters: 3R polytype significantly outperforms 2H MoS2 for the hydrogen evolution reaction
DOI: 10.1039/D1NR03284D, Paper
Sodium naphthalenide exfoliated 3R polytype of MoS2 outperforms the 2H polytype due to much higher conversion to the metallic 1T phase.
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In-plane ferroelectricity in few-layered GeS and its van der Waals ferroelectric diodes
DOI: 10.1039/D1NR03807A, Paper
Few-layered GeS nanoflakes synthesized by a new post-thinning method show in-plane ferroelectric behaviour. The robust interfacial ferroelectricity in the GeS/InSe heterostructure yields a tunable photovoltaic performance.
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[ASAP] Remote Passivation in Two-Dimensional Materials: The Case of the Monolayer–Bilayer Lateral Junction of MoSe2

Supersolids go two-dimensional
Nature, Published online: 18 August 2021; doi:10.1038/d41586-021-02191-5
Supersolids are exotic materials whose constituent particles can simultaneously form a crystal and flow without friction. The first 2D supersolid has been produced using ultracold gases of highly magnetic atoms.[ASAP] Defect-Modified Ultrathin BiOX (X = Cl, Br) Nanosheets Via a Top–Down Approach with Effective Visible-Light Photocatalytic Degradation

[ASAP] Spin-Current Modulation in Hexagonal Buckled ZnTe and CdTe Monolayers for Self-Powered Flexible-Piezo-Spintronic Devices

[ASAP] Initial Steps in CH4 Pyrolysis on Cu and Ni

[ASAP] Molecular Beam Epitaxy of Two-Dimensional GaTe Nanostructures on GaAs(001) Substrates: Implication for Near-Infrared Photodetection

Dynamics of 2D material membranes
[ASAP] Giant Thermoelectric Seebeck Coefficients in Tellurium Quantum Wires Formed Vertically in an Aluminum Oxide Layer by Electrical Breakdown

[ASAP] Layer-Dependent Band Gaps of Platinum Dichalcogenides

[ASAP] Crossover from 2D Ferromagnetic Insulator to Wide Band Gap Quantum Anomalous Hall Insulator in Ultrathin MnBi2Te4

Room temperature spontaneous valley polarization in two-dimensional FeClBr monolayer
DOI: 10.1039/D1NR04063D, Paper
The exchange interaction and spin-orbit coupling effect lead to the valley polarization and the schematic of anomalous valley Hall effect.
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Grain‐Boundary Engineering of Monolayer MoS2 for Energy‐Efficient Lateral Synaptic Devices (Adv. Mater. 32/2021)
Synaptic Devices
With lithography-free, directlaser-writing-controlled MoS2/MoS2−x Oδ grain boundaries, synaptic devices fabricated by Kai Liu and co-workers, as described in article number 2102435, exhibit short-term and long-term plasticity characteristics that are responsive to electric and light stimulation simultaneously; they also exhibit a low energy consumption that is over 40 times lower than that of conventional complementary metal–oxide–semiconductors
Germanium Nanosheets with Dirac Characteristics as a Saturable Absorber for Ultrafast Pulse Generation (Adv. Mater. 32/2021)
Germanene
Several layers of germanene with Dirac characteristics and ultrafast carrier dynamics are produced by Guanyu Liu, Yi Du, Qiaoliang Bao, and co-workers, as reported in article number 2101042. As a new group-IV member material, germanene is further demonstrated as a promising saturable absorber to construct ultrafast mode-locked lasers and generate sub-picosecond pulses in the telecommunication band.
Two‐Dimensional Antimony‐Based Perovskite‐Inspired Materials for High‐Performance Self‐Powered Photodetectors
To address the demand for ubiquitous, energy-neutral light sensing, this study investigates for the first time self-powered photodetectors based on 2D antimony-based perovskite-inspired materials. The higher structural dimensionality of these materials enables cutting-edge performance for antimony- and bismuth-based, perovskite-inspired, self-powered photodetectors. Detailed characterization reveals that this performance boost originates from the enhanced optoelectronic properties associated with the 2D structure.
Abstract
The ongoing Internet of Things revolution has led to strong demand for low-cost, ubiquitous light sensing based on easy-to-fabricate, self-powered photodetectors. While solution-processable lead-halide perovskites have raised significant hopes in this regard, toxicity concerns have prompted the search for safer, lead-free perovskite-inspired materials (PIMs) with similar optoelectronic potential. Antimony- and bismuth-based PIMs are found particularly promising; however, their self-powered photodetector performance to date has lagged behind the lead-based counterparts. Aiming to realize the full potential of antimony-based PIMs, this study examines, for the first time, the impact of their structural dimensionality on their self-powered photodetection capabilities, with a focus on 2D Cs3Sb2I9− x Cl x and Rb3Sb2I9 and 0D Cs3Sb2I9. The 2D absorbers deliver cutting-edge self-powered photodetector performance, with a more-than-tenfold increase in external quantum efficiency (up to 55%), speed of response (>5 kHz), and linear dynamic range (>four orders of magnitude) compared to prior self-powered A3M2X9 implementations (A+: monovalent cation; M3+: Sb3+/Bi3+; X−: halide anion). Detailed characterization reveals that such a performance boost originates from the superior carrier lifetimes and reduced exciton self-trapping enabled by the 2D structure. By delivering cutting-edge performance and mechanistic insight, this study represents an important step in lead-free perovskite-inspired optoelectronics toward self-powered, ubiquitous light sensing.
[ASAP] Spontaneous Polarity Flipping in a 2D Heterobilayer Induced by Fluctuating Interfacial Carrier Flows

Transfer-free, scalable photodetectors based on MOCVD-grown 2D-heterostructures
Identifying atomically thin crystals with diffusively reflected light
Imaging Seebeck drift of excitons and trions in MoSe 2 monolayers
[ASAP] Etching Mechanism of Monoatomic Aluminum Layers during MXene Synthesis

[ASAP] Immobilized Precursor Particle Driven Growth of Centimeter-Sized MoTe2 Monolayer

Understanding the interfacial charge transfer in the CVD grown Bi2O2Se/CsPbBr3 nanocrystal heterostructure and its exploitation in superior photodetection: experiment vs. theory
DOI: 10.1039/D1NR04470B, Paper
Efficient charge transfer in few-layer Bi2O2Se/CsPbBr3 NC heterostructure with type I band alignment paving the way for superior optoelectronic devices.
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