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30 Aug 03:01

[ASAP] Solution-Processed Two-Dimensional Metal Oxide Anticorrosion Nanocoating

by Leanddas Nurdiwijayanto, Hiroki Nishijima, Yoshiharu Miyake, Nobuyuki Sakai, Minoru Osada, Takayoshi Sasaki, and Takaaki Taniguchi

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Nano Letters
DOI: 10.1021/acs.nanolett.1c02581
30 Aug 02:57

Direct Growth of van der Waals Tin Diiodide Monolayers

by Qian‐Qian Yuan, Fawei Zheng, Zhi‐Qiang Shi, Qi‐Yuan Li, Yang‐Yang Lv, Yanbin Chen, Ping Zhang, Shao‐Chun Li
Direct Growth of van der Waals Tin Diiodide Monolayers

The great application potentials and challenges in high-performance devices inspire the search for new two-dimensional (2D) van der Waals (vdW) materials. Via molecular beam epitaxy, the vdW SnI2 monolayer is successfully fabricated with a new structure. This SnI2 monolayer is a 2D semiconductor with thickness-dependent properties, which is promising as a building block in future electronics/optoelectronics.


Abstract

Two-dimensional (2D) van der Waals (vdW) materials have garnered considerable attention for their unique properties and potentials in a wide range of fields, which include nano-electronics/optoelectronics, solar energy, and catalysis. Meanwhile, challenges in the approaches toward achieving high-performance devices still inspire the search for new 2D vdW materials with precious properties. In this study, via molecular beam epitaxy, for the first time, the vdW SnI2 monolayer is successfully fabricated with a new structure. Scanning tunneling microscopy/spectroscopy characterization, as corroborated by the density functional theory calculation, indicates that this SnI2 monolayer exhibits a band gap of ≈2.9 eV in the visible purple range, and an indirect- to direct-band gap transition occurs in the SnI2 bilayer. This study provides a new semiconducting 2D material that is promising as a building block in future electronics/optoelectronics.

30 Aug 02:55

Ten Years of Progress in the Synthesis and Development of MXenes

by Michael Naguib, Michel W. Barsoum, Yury Gogotsi
Ten Years of Progress in the Synthesis and Development of MXenes

The transition metal carbides and nitrides (MXenes) are among the largest 2D material families. MXenes’ unique properties, such as their metal-like electrical conductivity, render them quite useful in a large number of applications including energy storage, optoelectronic, biomedical, communications, and environmental. A brief historical overview of the first 10 years of MXene research and a perspective on their synthesis and future development are provided.


Abstract

Since their discovery in 2011, the number of 2D transition metal carbides and nitrides (MXenes) has steadily increased. Currently more than 40 MXene compositions exist. The ultimate number is far greater and in time they may develop into the largest family of 2D materials known. MXenes’ unique properties, such as their metal-like electrical conductivity reaching ≈20 000 S cm−1, render them quite useful in a large number of applications, including energy storage, optoelectronic, biomedical, communications, and environmental. The number of MXene papers and patents published has been growing quickly. The first MXene generation is synthesized using selective etching of metal layers from the MAX phases, layered transition metal carbides and carbonitrides using hydrofluoric acid. Since then, multiple synthesis approaches have been developed, including selective etching in a mixture of fluoride salts and various acids, non-aqueous etchants, halogens, and molten salts, allowing for the synthesis of new MXenes with better control over their surface chemistries. Herein, a brief historical overview of the first 10 years of MXene research and a perspective on their synthesis and future development are provided. The fact that their production is readily scalable in aqueous environments, with high yields bodes well for their commercialization.

30 Aug 02:53

Hybrid Devices by Selective and Conformal Deposition of PtSe2 at Low Temperatures

by Maximilian Prechtl, Shayan Parhizkar, Oliver Hartwig, Kangho Lee, Josef Biba, Tanja Stimpel‐Lindner, Farzan Gity, Andreas Schels, Jens Bolten, Stephan Suckow, Anna Lena Giesecke, Max C. Lemme, Georg S. Duesberg
Hybrid Devices by Selective and Conformal Deposition of PtSe2 at Low Temperatures

Platinum atomic layer deposition and thermal assisted conversion are combined to conformally and selectively coat structured substrates with layered platinum diselenide. The viability of the approach to controllably fabricate hybrid devices with a 2D material is demonstrated by the manufacture of a structured gas sensor and a fully integrated infrared photodetector on a Si-waveguide.


Abstract

2D materials display very promising intrinsic material properties, with multiple applications in electronics, photonics, and sensing. In particular layered platinum diselenide has shown high potential due to its layer-dependent tunable bandgap, low-temperature growth, and high environmental stability. Here, the conformal and area selective (AS) low-temperature growth of layered PtSe2 is presented defining a new paradigm for 2D material integration. The thermally-assisted conversion of platinum which is deposited by AS atomic layer deposition to PtSe2 is demonstrated on various substrates with a distinct 3D topography. Further the viability of the approach is presented by successful on-chip integration of hybrid semiconductor devices, namely by the manufacture of a highly sensitive ammonia sensors channel with 3D topography and fully integrated infrared-photodetectors on silicon photonics waveguides. The presented methodologies of conformal and AS growth therefore lay the foundation for new design routes for the synthesis of more complex hybrid structures with 2D materials.

30 Aug 02:52

[ASAP] Elimination of Grain Boundaries in Graphene Growth on a Cu–Ni Alloyed Substrate by Chemical Vapor Deposition

by Haohao Shi, Yuxiao Guo, Zhikai Qi, Kun Xie, Runxiao Zhang, Yumin Xia, Chen Chen, Hualing Zeng, Ping Cui, Hengxing Ji, Shengyong Qin, and Zhenyu Zhang

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The Journal of Physical Chemistry C
DOI: 10.1021/acs.jpcc.1c00162
30 Aug 02:50

New form of silicon advances semiconductor technology

Publication date: September 2021

Source: Materials Today, Volume 48

Author(s): Laurie Donaldson

30 Aug 02:49

MoS2 stacking matters: 3R polytype significantly outperforms 2H MoS2 for the hydrogen evolution reaction

Nanoscale, 2021, 13,19391-19398
DOI: 10.1039/D1NR03284D, Paper
Jan Luxa, Lucie Spejchalová, Ivo Jakubec, Zdeněk Sofer
Sodium naphthalenide exfoliated 3R polytype of MoS2 outperforms the 2H polytype due to much higher conversion to the metallic 1T phase.
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30 Aug 02:48

In-plane ferroelectricity in few-layered GeS and its van der Waals ferroelectric diodes

Nanoscale, 2021, 13,16122-16130
DOI: 10.1039/D1NR03807A, Paper
Yong Yan, Qunrui Deng, Shasha Li, Tao Guo, Xueping Li, Yurong Jiang, Xiaohui Song, Wen Huang, Juehan Yang, Congxin Xia
Few-layered GeS nanoflakes synthesized by a new post-thinning method show in-plane ferroelectric behaviour. The robust interfacial ferroelectricity in the GeS/InSe heterostructure yields a tunable photovoltaic performance.
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30 Aug 02:47

[ASAP] Remote Passivation in Two-Dimensional Materials: The Case of the Monolayer–Bilayer Lateral Junction of MoSe2

by Nannan Han, Weiyu Xie, Junfeng Zhang, Lizhao Liu, Jijun Zhao, Damien West, and Shengbai Zhang

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The Journal of Physical Chemistry Letters
DOI: 10.1021/acs.jpclett.1c02457
30 Aug 02:44

Supersolids go two-dimensional

by Bruno Laburthe-Tolra

Nature, Published online: 18 August 2021; doi:10.1038/d41586-021-02191-5

Supersolids are exotic materials whose constituent particles can simultaneously form a crystal and flow without friction. The first 2D supersolid has been produced using ultracold gases of highly magnetic atoms.
30 Aug 02:41

[ASAP] Defect-Modified Ultrathin BiOX (X = Cl, Br) Nanosheets Via a Top–Down Approach with Effective Visible-Light Photocatalytic Degradation

by Qinglin Yuan, Shuxian Wei, Taiping Hu, Yixing Ye, Yunyu Cai, Jun Liu, Pengfei Li, and Changhao Liang

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The Journal of Physical Chemistry C
DOI: 10.1021/acs.jpcc.1c02950
30 Aug 02:41

[ASAP] Spin-Current Modulation in Hexagonal Buckled ZnTe and CdTe Monolayers for Self-Powered Flexible-Piezo-Spintronic Devices

by Manish Kumar Mohanta, Fathima IS, Amal Kishore, and Abir De Sarkar

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ACS Applied Materials & Interfaces
DOI: 10.1021/acsami.1c09267
30 Aug 02:35

[ASAP] Initial Steps in CH4 Pyrolysis on Cu and Ni

by Jiren Zeng, Maryam Tarazkar, Clarke Palmer, Michael J. Gordon, Horia Metiu, and Eric W. McFarland

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The Journal of Physical Chemistry C
DOI: 10.1021/acs.jpcc.1c03606
30 Aug 02:33

[ASAP] Molecular Beam Epitaxy of Two-Dimensional GaTe Nanostructures on GaAs(001) Substrates: Implication for Near-Infrared Photodetection

by Sa Hoang Huynh, Nhu Quynh Diep, Tan Vinh Le, Ssu Kuan Wu, Cheng Wei Liu, Duc Loc Nguyen, Hua Chiang Wen, Wu Ching Chou, Van Qui Le, and Thanh Tra Vu

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ACS Applied Nano Materials
DOI: 10.1021/acsanm.1c01544
30 Aug 02:33

Dynamics of 2D material membranes

by Peter G Steeneken, Robin J Dolleman, Dejan Davidovikj, Farbod Alijani and Herre S J van der Zant
The dynamics of suspended two-dimensional (2D) materials has received increasing attention during the last decade, yielding new techniques to study and interpret the physics that governs the motion of atomically thin layers. This has led to insights into the role of thermodynamic and nonlinear effects as well as the mechanisms that govern dissipation and stiffness in these resonators. In this review, we present the current state-of-the-art in the experimental study of the dynamics of 2D membranes. The focus will be both on the experimental measurement techniques and on the interpretation of the physical phenomena exhibited by atomically thin membranes in the linear and nonlinear regimes. We will show that resonant 2D membranes have emerged both as sensitive probes of condensed matter physics in ultrathin layers, and as sensitive elements to monitor small external forces or other changes in the environment. New directions for utilizing suspended 2D membranes for material characte...
30 Aug 02:19

[ASAP] Giant Thermoelectric Seebeck Coefficients in Tellurium Quantum Wires Formed Vertically in an Aluminum Oxide Layer by Electrical Breakdown

by No-Won Park, Hanul Kim, Won-Yong Lee, Gil-Sung Kim, Dae Yun Kang, Tae Geun Kim, Eiji Saitoh, Young-Gui Yoon, Heesuk Rho, and Sang-Kwon Lee

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The Journal of Physical Chemistry Letters
DOI: 10.1021/acs.jpclett.1c01842
30 Aug 02:13

[ASAP] Layer-Dependent Band Gaps of Platinum Dichalcogenides

by Jingfeng Li, Sadhu Kolekar, Mahdi Ghorbani-Asl, Tibor Lehnert, Johannes Biskupek, Ute Kaiser, Arkady V. Krasheninnikov, and Matthias Batzill

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ACS Nano
DOI: 10.1021/acsnano.1c02971
30 Aug 02:13

[ASAP] Crossover from 2D Ferromagnetic Insulator to Wide Band Gap Quantum Anomalous Hall Insulator in Ultrathin MnBi2Te4

by Chi Xuan Trang, Qile Li, Yuefeng Yin, Jinwoong Hwang, Golrokh Akhgar, Iolanda Di Bernardo, Antonija Grubišić-Čabo, Anton Tadich, Michael S. Fuhrer, Sung-Kwan Mo, Nikhil V. Medhekar, and Mark T. Edmonds

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ACS Nano
DOI: 10.1021/acsnano.1c03936
30 Aug 01:27

Room temperature spontaneous valley polarization in two-dimensional FeClBr monolayer

Nanoscale, 2021, 13,14807-14813
DOI: 10.1039/D1NR04063D, Paper
Rui Li, Jiawei Jiang, Wenbo Mi, Haili Bai
The exchange interaction and spin-orbit coupling effect lead to the valley polarization and the schematic of anomalous valley Hall effect.
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13 Aug 11:50

Grain‐Boundary Engineering of Monolayer MoS2 for Energy‐Efficient Lateral Synaptic Devices (Adv. Mater. 32/2021)

by Xuewen Wang, Bolun Wang, Qinghua Zhang, Yufei Sun, Enze Wang, Hao Luo, Yonghuang Wu, Lin Gu, Huanglong Li, Kai Liu
Grain-Boundary Engineering of Monolayer MoS2 for Energy-Efficient Lateral Synaptic Devices (Adv. Mater. 32/2021)

Synaptic Devices

With lithography-free, directlaser-writing-controlled MoS2/MoS2−x Oδ grain boundaries, synaptic devices fabricated by Kai Liu and co-workers, as described in article number 2102435, exhibit short-term and long-term plasticity characteristics that are responsive to electric and light stimulation simultaneously; they also exhibit a low energy consumption that is over 40 times lower than that of conventional complementary metal–oxide–semiconductors


13 Aug 11:49

Germanium Nanosheets with Dirac Characteristics as a Saturable Absorber for Ultrafast Pulse Generation (Adv. Mater. 32/2021)

by Haoran Mu, Yani Liu, Sudhakara Reddy Bongu, Xiaozhi Bao, Lei Li, Si Xiao, Jincheng Zhuang, Chen Liu, Yamin Huang, Yemin Dong, Kristian Helmerson, Jiaou Wang, Guanyu Liu, Yi Du, Qiaoliang Bao
Germanium Nanosheets with Dirac Characteristics as a Saturable Absorber for Ultrafast Pulse Generation (Adv. Mater. 32/2021)

Germanene

Several layers of germanene with Dirac characteristics and ultrafast carrier dynamics are produced by Guanyu Liu, Yi Du, Qiaoliang Bao, and co-workers, as reported in article number 2101042. As a new group-IV member material, germanene is further demonstrated as a promising saturable absorber to construct ultrafast mode-locked lasers and generate sub-picosecond pulses in the telecommunication band.


13 Aug 11:48

Two‐Dimensional Antimony‐Based Perovskite‐Inspired Materials for High‐Performance Self‐Powered Photodetectors

by Jianjun Mei, Maning Liu, Paola Vivo, Vincenzo Pecunia
Two-Dimensional Antimony-Based Perovskite-Inspired Materials for High-Performance Self-Powered Photodetectors

To address the demand for ubiquitous, energy-neutral light sensing, this study investigates for the first time self-powered photodetectors based on 2D antimony-based perovskite-inspired materials. The higher structural dimensionality of these materials enables cutting-edge performance for antimony- and bismuth-based, perovskite-inspired, self-powered photodetectors. Detailed characterization reveals that this performance boost originates from the enhanced optoelectronic properties associated with the 2D structure.


Abstract

The ongoing Internet of Things revolution has led to strong demand for low-cost, ubiquitous light sensing based on easy-to-fabricate, self-powered photodetectors. While solution-processable lead-halide perovskites have raised significant hopes in this regard, toxicity concerns have prompted the search for safer, lead-free perovskite-inspired materials (PIMs) with similar optoelectronic potential. Antimony- and bismuth-based PIMs are found particularly promising; however, their self-powered photodetector performance to date has lagged behind the lead-based counterparts. Aiming to realize the full potential of antimony-based PIMs, this study examines, for the first time, the impact of their structural dimensionality on their self-powered photodetection capabilities, with a focus on 2D Cs3Sb2I9− x Cl x and Rb3Sb2I9 and 0D Cs3Sb2I9. The 2D absorbers deliver cutting-edge self-powered photodetector performance, with a more-than-tenfold increase in external quantum efficiency (up to 55%), speed of response (>5 kHz), and linear dynamic range (>four orders of magnitude) compared to prior self-powered A3M2X9 implementations (A+: monovalent cation; M3+: Sb3+/Bi3+; X: halide anion). Detailed characterization reveals that such a performance boost originates from the superior carrier lifetimes and reduced exciton self-trapping enabled by the 2D structure. By delivering cutting-edge performance and mechanistic insight, this study represents an important step in lead-free perovskite-inspired optoelectronics toward self-powered, ubiquitous light sensing.

13 Aug 07:17

[ASAP] Spontaneous Polarity Flipping in a 2D Heterobilayer Induced by Fluctuating Interfacial Carrier Flows

by Hua Li, Honglei Li, Xingzhi Wang, Yufeng Nie, Cheng Liu, Yu Dai, Jinyang Ling, Mengning Ding, Xi Ling, Daiqian Xie, Ning Lu, Changjin Wan, Qihua Xiong□, and Weigao Xu

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Nano Letters
DOI: 10.1021/acs.nanolett.1c01356
13 Aug 07:15

Boridene: a 2D boride

by Lavine, M. S.
13 Aug 07:13

Transfer-free, scalable photodetectors based on MOCVD-grown 2D-heterostructures

by Ulrike Hutten, Leon Daniel, Annika Grundmann, Nicole Stracke, Mohamed Abdelbaky, Yannick Beckmann, Michael Heuken, Wolfgang Mertin, Holger Kalisch, Andrei Vescan, Gerd Bacher and Tilmar Kümmell
2D semiconductors based on transition metal dichalcogenides are highly promising for ultrathin photodetectors due to their thickness in the nanometer range and their exceptional light absorption properties. To enable efficient separation of optically generated electron–hole pairs heterostructures have to be implemented, which are usually prepared by poorly controlled mechanical steps such as exfoliation, transfer and stacking processes that prevent industrial upscaling. Here, semitransparent photodetectors in the mm 2 range based on MoS 2 /WS 2 heterostructures are presented that are realized without any transfer step by a scalable metal-organic chemical vapor deposition process on a sapphire substrate in a continuous growth run. The heterostructure device exhibits a responsivity, which is enhanced by about 5–6 orders of magnitude with respect to reference devices based on either MoS 2 or WS 2 monolayers only. The large gain enhan...
13 Aug 07:13

Identifying atomically thin crystals with diffusively reflected light

by Daniil Domaretskiy, Nicolas Ubrig, Ignacio Gutiérrez-Lezama, Michael K Tran and Alberto F Morpurgo
The field of two-dimensional (2D) materials has been developing at an impressive pace, with atomically thin crystals of an increasing number of different compounds that have become available, together with techniques enabling their assembly into functional heterostructures. The strategy to detect these atomically thin crystals—based on optical contrast enhanced by Fabry–Pérot interference—has however remained unchanged since the discovery of graphene. Such an absence of evolution is starting to pose problems, because for many of the 2D materials of current interest the optical contrast provided by the commonly used detection procedure is insufficient to identify the presence of individual monolayers, or to determine unambiguously the thickness of atomically thin multilayers. Here we explore an alternative detection strategy, in which the enhancement of optical contrast originates from the use of optically inhomogeneous substrates, leading to diffusively reflected light. Owing to...
13 Aug 07:12

Imaging Seebeck drift of excitons and trions in MoSe 2 monolayers

by Sangjun Park, Bo Han, Caroline Boule, Daniel Paget, Alistair C H Rowe, Fausto Sirotti, Takashi Taniguchi, Kenji Watanabe, Cedric Robert, Laurent Lombez, Bernhard Urbaszek, Xavier Marie and Fabian Cadiz
Hyperspectral imaging at cryogenic temperatures is used to investigate exciton and trion propagation in MoSe 2 monolayers (ML) encapsulated with hexagonal boron nitride (hBN). Under a tightly focused, continuous-wave laser excitation, the spatial distribution of neutral excitons and charged trions strongly differ at high excitation densities. Remarkably, in this regime the trion distribution develops a halo shape, similar to that previously observed in WS 2 ML at room temperature and under pulsed excitation. In contrast, the exciton distribution only presents a moderate broadening attributed to a much less pronounced halo. Spatially and spectrally resolved luminescence spectra reveal the buildup of a significant temperature gradient at high excitation power, that is attributed to the energy relaxation of photoinduced hot carriers. We show, via a numerical resolution of the transport equations for excitons and trions, that the halo can be interpreted as therma...
13 Aug 07:11

[ASAP] Etching Mechanism of Monoatomic Aluminum Layers during MXene Synthesis

by Yong-Jae Kim, Seon Joon Kim▽, Darae Seo, Yoonjeong Chae, Mark Anayee, Yonghee Lee, Yury Gogotsi, Chi Won Ahn, and Hee-Tae Jung

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Chemistry of Materials
DOI: 10.1021/acs.chemmater.1c01263
13 Aug 07:07

[ASAP] Immobilized Precursor Particle Driven Growth of Centimeter-Sized MoTe2 Monolayer

by Liang Ma, Juntong Zhu, Wei Li, Rong Huang, Xiangyi Wang, Jun Guo, Jin-Ho Choi, Yanhui Lou, Dan Wang, and Guifu Zou

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Journal of the American Chemical Society
DOI: 10.1021/jacs.1c06250
13 Aug 07:06

Understanding the interfacial charge transfer in the CVD grown Bi2O2Se/CsPbBr3 nanocrystal heterostructure and its exploitation in superior photodetection: experiment vs. theory

Nanoscale, 2021, 13,14945-14959
DOI: 10.1039/D1NR04470B, Paper
Md Tarik Hossain, Mandira Das, Joydip Ghosh, Subhradip Ghosh, P. K. Giri
Efficient charge transfer in few-layer Bi2O2Se/CsPbBr3 NC heterostructure with type I band alignment paving the way for superior optoelectronic devices.
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