Shared posts

11 Nov 11:04

2D materials grow large

by Olga Bubnova

Nature Nanotechnology, Published online: 10 November 2021; doi:10.1038/s41565-021-01024-w

2D materials grow large
11 Nov 11:03

[ASAP] Ultrathin, High-Aspect Ratio, and Free-Standing Magnetic Nanowires by Exfoliation of Ferromagnetic Quasi-One-Dimensional van der Waals Lattices

by Yi Qu, Maxx Q. Arguilla, Qiang Zhang, Xin He, and Mircea Dincă

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Journal of the American Chemical Society
DOI: 10.1021/jacs.1c09607
11 Nov 11:02

[ASAP] Superconducting 2D NbS2 Grown Epitaxially by Chemical Vapor Deposition

by Zhenyu Wang, Cheol-Yeon Cheon, Mukesh Tripathi, Guilherme Migliato Marega, Yanfei Zhao, Hyun Goo Ji, Michal Macha, Aleksandra Radenovic, and Andras Kis

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ACS Nano
DOI: 10.1021/acsnano.1c07956
11 Nov 11:00

Rapid oxygen exchange between hematite and water vapor

by Zdenek Jakub

Nature Communications, Published online: 10 November 2021; doi:10.1038/s41467-021-26601-4

Knowing how individual water molecules interact with surfaces is crucial for understanding surface and interface phenomena. Here, the authors show how local water-water interactions enable an unforeseen and surprisingly rapid mechanism of atom exchange between a common mineral and its surroundings.
11 Nov 11:00

Optical Anisotropy in van der Waals materials: Impact on Direct Excitation of Plasmons and Photons by Quantum Tunneling

by Zhe Wang

Light: Science & Applications, Published online: 08 November 2021; doi:10.1038/s41377-021-00659-7

Enhancement in local density of optical states arising from the optical anisotropy of hexagonal boron nitride significantly improves the emission rates of plasmons and photons in quantum mechanical tunnel junctions.
11 Nov 10:59

All-in-one two-dimensional retinomorphic hardware device for motion detection and recognition

by Zhenhan Zhang

Nature Nanotechnology, Published online: 08 November 2021; doi:10.1038/s41565-021-01003-1

A retina-inspired two-dimensional material based retinomorphic device exhibits all-in-one perception, memory and computing capabilities for motion detection and recognition.
11 Nov 10:58

2D materials grow large

by Olga Bubnova

Nature Nanotechnology, Published online: 10 November 2021; doi:10.1038/s41565-021-01024-w

2D materials grow large
11 Nov 10:58

High carrier mobility in graphene doped using a monolayer of tungsten oxyselenide

by Min Sup Choi

Nature Electronics, Published online: 22 October 2021; doi:10.1038/s41928-021-00657-y

A monolayer of tungsten oxyselenide, created by oxidizing a layer of tungsten diselenide, can be used to efficiently dope graphene, leading to a room-temperature mobility of 2,000 cm2 V–1 s–1 at a hole density of 3 × 1013 cm–2.
11 Nov 10:58

Doping in 2D

Nature Electronics, Published online: 22 October 2021; doi:10.1038/s41928-021-00668-9

Ion implantation can be used to dope silicon devices, but can be problematic when applied to the atomically thin crystal structure of two-dimensional materials — an increasing range of alternative methods is though available.
11 Nov 10:58

Germanium pyramids see the light

by Katharina Zeissler

Nature Electronics, Published online: 22 October 2021; doi:10.1038/s41928-021-00666-x

Germanium pyramids see the light
11 Nov 10:57

Mid-infrared photonics and optoelectronics in 2D materials

Publication date: December 2021

Source: Materials Today, Volume 51

Author(s): Guozhen Liang, Xuechao Yu, Xiaonan Hu, Bo Qiang, Chongwu Wang, Qi Jie Wang

10 Nov 10:32

Rapid oxygen exchange between hematite and water vapor

by Zdenek Jakub

Nature Communications, Published online: 10 November 2021; doi:10.1038/s41467-021-26601-4

Knowing how individual water molecules interact with surfaces is crucial for understanding surface and interface phenomena. Here, the authors show how local water-water interactions enable an unforeseen and surprisingly rapid mechanism of atom exchange between a common mineral and its surroundings.
10 Nov 02:39

[ASAP] Large-Area Monolayer MoS2 Nanosheets on GaN Substrates for Light-Emitting Diodes and Valley-Spin Electronic Devices

by Peng Yang, Haifeng Yang, Zhengyuan Wu, Fuyou Liao, Xiaojiao Guo, Jianan Deng, Qiang Xu, Haomin Wang, Junjie Sun, Fei Chen, Wenzhong Bao, Laigui Hu, Zhongkai Liu, Yulin Chen, Zhi-Jun Qiu, Zhilai Fang, Ran Liu, and Chunxiao Cong

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ACS Applied Nano Materials
DOI: 10.1021/acsanm.1c02662
10 Nov 02:38

[ASAP] Gas Permeability and Selectivity of a Porous WS2 Monolayer

by Nasim Hassani, Mahdi Ghorbani-Asl, Boya Radha, Marija Drndić, Arkady V. Krasheninnikov, and Mehdi Neek-Amal

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The Journal of Physical Chemistry C
DOI: 10.1021/acs.jpcc.1c06894
09 Nov 12:55

Epitaxial growth of monolayer PdTe 2 and patterned PtTe 2 by direct tellurization of Pd and Pt surfaces

by Lina Liu, Dmitry Zemlyanov and Yong P Chen
Two-dimensional (2D) palladium ditelluride (PdTe 2 ) and platinum ditelluride (PtTe 2 ) are two Dirac semimetals, which have fascinating quantum properties such as superconductivity, magnetism and topological order and show the promising applications in future nanoelectronics and optoelectronics. However, the synthesis of PdTe 2 and PtTe 2 monolayers (MLs) is hindered by a strong interlayer coupling and orbital hybridization. In this study, we demonstrate an efficient synthesis of PdTe 2 and PtTe 2 MLs Large-area and high quality MLs of PdTe 2 and patterned PtTe 2 were epitaxially grown on the Pd(111) and Pt(111) surfaces by direct telurization in ultra-high vacuum. This was confirmed by x-ray photoelectron spectroscopy, low energy electron diffraction and scanning tunnelling microscopy. PdTe 2 ML demonstrated high thermal stability showing no decomposition sign after annealing at 470 °C. A w...
09 Nov 12:54

[ASAP] Substrate Modification during Chemical Vapor Deposition of hBN on Sapphire

by Anushka Bansal, Maria Hilse, Benjamin Huet, Ke Wang, Azimkhan Kozhakhmetov, Ji Hyun Kim, Saiphaneendra Bachu, Nasim Alem, Ramon Collazo, Joshua A. Robinson, Roman Engel-Herbert, and Joan M. Redwing

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ACS Applied Materials & Interfaces
DOI: 10.1021/acsami.1c14591
09 Nov 12:54

[ASAP] Strengthening and Weakening by Dislocations in Monolayer MoS2

by Li Yang, Jinjie Liu, Yanwen Lin, Ke Xu, Xuezheng Cao, Zhisen Zhang, and Jianyang Wu

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Chemistry of Materials
DOI: 10.1021/acs.chemmater.1c02797
09 Nov 03:10

Tuning magnetism at the two-dimensional limit: a theoretical perspective

Nanoscale, 2021, 13,19812-19827
DOI: 10.1039/D1NR06835K, Minireview
Dongzhe Li, Shuo Li, Chengyong Zhong, Junjie He
Tuning magnetism in 2D magnets via external stimuli is reviewed, such as by the electric field, magnetic field, strain, optics, chemical functionalization, and spin–orbit engineering.
The content of this RSS Feed (c) The Royal Society of Chemistry
09 Nov 03:10

Coherent control of interlayer vibrations in Bi2Se3 van der Waals thin-films

Nanoscale, 2021, 13,19264-19273
DOI: 10.1039/D1NR05075C, Paper
Tae Gwan Park, Hong Ryeol Na, Seung-Hyun Chun, Won Bae Cho, Sunghun Lee, Fabian Rotermund
All-optical coherent control of interlayer vibrations in layered Bi2Se3 is demonstrated in a highly precise manner by employing ultrafast pump and probe spectroscopy with two delay-variable pump beams.
The content of this RSS Feed (c) The Royal Society of Chemistry
09 Nov 03:08

Optical Anisotropy in van der Waals materials: Impact on Direct Excitation of Plasmons and Photons by Quantum Tunneling

by Zhe Wang

Light: Science & Applications, Published online: 08 November 2021; doi:10.1038/s41377-021-00659-7

Enhancement in local density of optical states arising from the optical anisotropy of hexagonal boron nitride significantly improves the emission rates of plasmons and photons in quantum mechanical tunnel junctions.
09 Nov 03:08

[ASAP] Self-Assembly Graphene Arrays on a Liquid Cu–Ag Alloy

by Yixuan Fan, Menghan Li, Xiangzheng Jia, Lin Li, Qing Zhang, Enlai Gao, Dechao Geng, and Wenping Hu

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Chemistry of Materials
DOI: 10.1021/acs.chemmater.1c02390
09 Nov 03:07

[ASAP] Voltage-Induced Bistability of Single Spin-Crossover Molecules in a Two-Dimensional Monolayer

by Yongfeng Tong, Massine Kelaï, Kaushik Bairagi, Vincent Repain, Jérôme Lagoute, Yann Girard, Sylvie Rousset, Marie-Laure Boillot, Talal Mallah, Cristian Enachescu, and Amandine Bellec

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The Journal of Physical Chemistry Letters
DOI: 10.1021/acs.jpclett.1c03271
09 Nov 03:06

The Road for 2D Semiconductors in the Silicon Age

by Shuiyuan Wang, Xiaoxian Liu, Peng Zhou
The Road for 2D Semiconductors in the Silicon Age

The potential of fusing 2D materials with silicon technologies, including 2D logic and memory devices, enabling the mitigation of challenges related to silicon integrated circuits (ICs) and even the creation of technologies beyond silicon, is highlighted. The progress of 2D IC applications and the prospects for realizing wafer-scale heterogeneous integration compatible with silicon ICs are also summarized.


Abstract

Continued reduction in transistor size can improve the performance of silicon integrated circuits (ICs). However, as Moore's law approaches physical limits, high-performance growth in silicon ICs becomes unsustainable, due to challenges of scaling, energy efficiency, and memory limitations. The ultrathin layers, diverse band structures, unique electronic properties, and silicon-compatible processes of 2D materials create the potential to consistently drive advanced performance in ICs. Here, the potential of fusing 2D materials with silicon ICs to minimize the challenges in silicon ICs, and to create technologies beyond the von Neumann architecture, is presented, and the killer applications for 2D materials in logic and memory devices to ease scaling, energy efficiency bottlenecks, and memory dilemmas encountered in silicon ICs are discussed. The fusion of 2D materials allows the creation of all-in-one perception, memory, and computation technologies beyond the von Neumann architecture to enhance system efficiency and remove computing power bottlenecks. Progress on the 2D ICs demonstration is summarized, as well as the technical hurdles it faces in terms of wafer-scale heterostructure growth, transfer, and compatible integration with silicon ICs. Finally, the promising pathways and obstacles to the technological advances in ICs due to the integration of 2D materials with silicon are presented.

08 Nov 01:55

Synthesis of Carbon Nanotubes by Floating Catalyst Chemical Vapor Deposition and Their Applications

by Peng‐Xiang Hou, Feng Zhang, Lili Zhang, Chang Liu, Hui‐Ming Cheng
Synthesis of Carbon Nanotubes by Floating Catalyst Chemical Vapor Deposition and Their Applications

Floating catalyst chemical vapor deposition (FCCVD) method is widely used to produce high quality carbon nanotubes (CNTs) due to its simple processing, good controllability, and desirable scalability. This review summarizes the state-of-the-art progress in the controlled growth and applications of the CNTs and their macrostructures by FCCVD. The critical challenges and future perspectives are also discussed.


Abstract

Floating catalyst chemical vapor deposition (FCCVD) has been one of the most important techniques for the synthesis of high-quality single-, double-, and multi-wall carbon nanotubes (CNTs). The method is characterized of simple processing, good controllability, and desirable scalability. The bulk morphologies of the synthesized CNTs can be sponge-like, an array, a thin film, or fiber by simply changing the growth parameters and the way they are collected, which facilitates a wide range of applications. The authors comprehensively review the state-of-the-art progress on the controlled growth of CNTs by FCCVD which have a defined number of walls, and controlled diameter, bundle size, and type of conductivity. The properties and possible applications for the CNTs and their hybrids are summarized. Finally, insights into the key challenges and prospects for CNTs synthesized by FCCVD are discussed.

08 Nov 01:54

Controlling Spin Orientation and Metamagnetic Transitions in Anisotropic van der Waals Antiferromagnet CrPS4 by Hydrostatic Pressure

by Yuxuan Peng, Zhongchong Lin, Guang Tian, Jie Yang, Peijie Zhang, Fanggui Wang, Pingfan Gu, Xingyu Liu, Chin‐Wei Wang, Maxim Avdeev, Fuyang Liu, Dong Zhou, Rui Han, Peng Shen, Wenyun Yang, Shunquan Liu, Yu Ye, Jinbo Yang
Controlling Spin Orientation and Metamagnetic Transitions in Anisotropic van der Waals Antiferromagnet CrPS4 by Hydrostatic Pressure

Van der Waals antiferromagnet CrPS4 undergoes a spin-reorientation transition with magnetic moments realigning from almost parallel to the c axis in the ac plane to along the b axis upon heating. The transition is dramatically suppressed by hydrostatic pressure, offering an effective way to control the Néel vector of antiferromagnets.


Abstract

Controlling the phases of matter is a central task in condensed matter physics and materials science. In 2D magnets, manipulating spin orientation is of great significance in the context of the Mermin–Wagner theorem. Herein, a systematic study of temperature- and pressure-dependent magnetic properties up to 1 GPa in van der Waals CrPS4 is reported. Owing to the temperature-dependent change of the magnetic anisotropy energy, the material undergoes a first-order spin reorientation transition with magnetic moments realigning from being almost parallel with the c axis in the ac plane to the quasi-1D chains of CrS6 octahedra along the b axis upon heating. The spin reorientation temperature is suppressed after applying pressure, shifting the high-temperature phase to lower temperatures with the emergence of spin-flop transitions under magnetic fields applied along the b axis. The saturation field increases with pressure, indicating the enhancement of interlayer antiferromagnetic coupling. However, the Néel temperature is slightly reduced, which is ascribed to the suppression of intralayer ferromagnetic coupling. The work demonstrates the control of spin orientation and metamagnetic transitions in layered antiferromagnets, which may provide new perspectives for exploring 2D magnetism and related spintronic devices.

08 Nov 01:52

Epitaxial Growth of 2D Ultrathin Metastable γ‐Bi2O3 Flakes for High Performance Ultraviolet Photodetection

by Jie Wu, Fakun Wang, Haobo Li, Sijie Yang, Pengyu Li, Yinghe Zhao, Yuan Li, Tianyou Zhai
Epitaxial Growth of 2D Ultrathin Metastable γ-Bi2O3 Flakes for High Performance Ultraviolet Photodetection

This work presents the synthesis of 2D ultrathin metastable γ-Bi2O3 flakes via a van der Waals epitaxy method. The UV photodetectors based on the as-synthesized γ-Bi2O3 flakes exhibit excellent performance, where the responsivity is 64.5 A W−1, specific detectivity is 1.3 × 1013 Jones, and response time is 290 µs under 365 nm laser illumination.


Abstract

Ultraviolet detection is of great significance due to its wide applications in the missile tracking, flame detecting, pollution monitoring, and so on. The nonlayered semiconductor γ-Bi2O3 is a promising candidate toward high-performance UV detection due to the wide bandgap, excellent light sensitivity, environmental stability, nontoxic and elemental abundance properties. However, controllable preparation of ultrathin 2D γ-Bi2O3 flakes remains a challenge, owing to its nonlayered structure, metastable nature, and other competing phases. Moreover, the UV photodetectors based on 2D γ-Bi2O3 flake have not been implemented yet. Here, ultrathin (down to 4.8 nm) 2D γ-Bi2O3 flakes with high crystal quality are obtained via a van der Waals epitaxy method. The as-synthesized single-crystalline γ-Bi2O3 flakes show a body-centered cubic structure and grown along (111) lattice plane as revealed by experimental observations. More importantly, photodetectors based on the as-synthesized 2D γ-Bi2O3 flakes exhibit promising UV detection ability, including a responsivity of 64.5 A W−1, a detectivity of 1.3 × 1013 Jones, and an ultrafast response speed (τrise ≈ 290 µs and τdecay ≈ 870 µs) at 365 nm, suggesting its great potential for various optoelectronic applications.

08 Nov 01:51

Highly Efficient Electrocatalytic N2 Reduction to Ammonia over Metallic 1T Phase of MoS2 Enabled by Active Sites Separation Mechanism

by Ruoqi Liu, Ting Guo, Hao Fei, Zhuangzhi Wu, Dezhi Wang, Fangyang Liu
Highly Efficient Electrocatalytic N2 Reduction to Ammonia over Metallic 1T Phase of MoS2 Enabled by Active Sites Separation Mechanism

A prototype of active sites separation over 1T-MoS2 is proposed in which the Mo-edge and S atoms exhibit different catalytic NRR and HER selectivity. Benefiting from the active site separation, the 1T phase can accelerate both NRR and HER, but prefer the former, thus achieving the synchronization of selectivity and activity toward the NRR.


Abstract

The 1T phase of MoS2 has been widely reported to be highly active toward the hydrogen evolution reaction (HER), which is expected to restrict the competitive nitrogen reduction reaction (NRR). However, in this work, a prototype of active sites separation over 1T-MoS2 is proposed by DFT calculations that the Mo-edge and S atoms on the basal plane exhibit different catalytic NRR and HER selectivity, and a new role-playing synergistic mechanism is also well enabled for the multistep NRR, which is further experimentally confirmed. More importantly, a self-sacrificial strategy using g-C3N4 as templates is proposed to synthesize 1T-MoS2 with an ultrahigh 1T content (75.44%, named as CNMS, representing the composition elements of C, N, Mo, and S), which yields excellent NRR performances with an ammonia formation rate of 71.07 µg h–1 mg–1 cat. at −0.5 V versus RHE and a Faradic efficiency of 21.01%. This work provides a promising new orientation of synchronizing the selectivity and activity for the multistep catalytic reactions.

08 Nov 01:49

[ASAP] Controlling Carrier Transport in Vertical MoTe2/MoS2 van der Waals Heterostructures

by Yuchuan Pan, Xiaochi Liu, Junqiang Yang, Won Jong Yoo, and Jian Sun

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ACS Applied Materials & Interfaces
DOI: 10.1021/acsami.1c16594
08 Nov 01:46

NSF funds take 2D materials research center to next phase

Publication date: November 2021

Source: Materials Today, Volume 50

Author(s): Cordelia Sealy

08 Nov 01:46

Semiconductor material able to withstand high temperatures

Publication date: November 2021

Source: Materials Today, Volume 50

Author(s): Laurie Donaldson