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18 Dec 04:18

[ASAP] Few-Layered MoSe2 Nanosheets Confined in N,P-Doped Carbon Polyhedra for Sodium/Potassium-Ion Storage

by Yuyu Wang, Wenpei Kang, Xiaotong Wang, Bingbing Guo, Dongxu Cao, Dandan Wang, and Daofeng Sun

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ACS Applied Nano Materials
DOI: 10.1021/acsanm.1c03297
18 Dec 04:18

[ASAP] Transition Metal-Free Half-Metallicity in Two-Dimensional Gallium Nitride with a Quasi-Flat Band

by Seungjun Lee, Hussain Alsalman, Wei Jiang, Tony Low, and Young-Kyun Kwon

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The Journal of Physical Chemistry Letters
DOI: 10.1021/acs.jpclett.1c03966
18 Dec 04:16

Systemic consequences of disorder in magnetically self-organized topological MnBi 2 Te 4 /(Bi 2 Te 3 ) n superlattices

by Joanna Sitnicka, Kyungwha Park, Paweł Skupiński, Krzysztof Grasza, Anna Reszka, Kamil Sobczak, Jolanta Borysiuk, Zbigniew Adamus, Mateusz Tokarczyk, Andrei Avdonin, Irina Fedorchenko, Irina Abaloszewa, Sylwia Turczyniak-Surdacka, Natalia Olszowska, Jacek Kołodziej, Bogdan J Kowalski, Haiming Deng, Marcin Konczykowski, Lia Krusin-Elbaum and Agnieszka Wołoś
MnBi 2 Te 4 /(Bi 2 Te 3 ) n materials system has recently generated strong interest as a natural platform for the realization of the quantum anomalous Hall (QAH) state. The system is magnetically much better ordered than substitutionally doped materials, however, the detrimental effects of certain disorders are becoming increasingly acknowledged. Here, from compiling structural, compositional, and magnetic metrics of disorder in ferromagnetic (FM) MnBi 2 Te 4 /(Bi 2 Te 3 ) n it is found that migration of Mn between MnBi 2 Te 4 septuple layers (SLs) and otherwise non-magnetic Bi 2 Te 3 quintuple layers (QLs) has systemic consequences—it induces FM coupling of Mn-depleted SLs with Mn-doped QLs, seen in ferromagnetic resonance as an acoustic and optical resonance mode of the two coupled spin subsystems. Even for a large SL separation (
17 Dec 00:57

Self‐Limiting Synthesis of Ultrathin Ge(110) Single Crystal via Liquid Metal

by Haihui Lan, Yiling Li, Jinglu Liu, Wenchao Hu, Xiaohui Zhu, Yuxin Ma, Lixin Niu, Zehao Zhang, Shuangfeng Jia, Linyang Li, Yunxu Chen, Jianbo Wang, Mengqi Zeng, Lei Fu
Self-Limiting Synthesis of Ultrathin Ge(110) Single Crystal via Liquid Metal

2D Ge(110) single crystal is first synthesized via a gallium-associated self-limiting growth mechanism, which exhibits anisotropic honeycomb structure, uniformly incremental lattice, blue-shifted photoluminescence emission, unique phonon modes, and excellent second harmonic generation. Notably, it shows high hole mobility of 724 cm2 V−1 s−1, which will provide an excellent candidate for application in electronics and optoelectronics.


Abstract

Germanium, the prime applied semiconductor, is widely used in solid-state electronics and photoelectronics. Unfortunately, since the 3D diamond-like structure with strong covalent bonds impedes the 2D anisotropic growth, only the examples of ultrathin Ge along the (111) plane have been investigated, much less to the controllable synthesis along another crystal surface. Meanwhile, Ge(111) flakes are limited in semiconductor applications because of their gapless property. Here, ultrathin Ge(110) single crystal is synthesized with semiconductive property via gallium-associated self-limiting growth. The obtained ultrathin Ge(110) single crystal exhibits anisotropic honeycomb structure, uniformly incremental lattice, wide tunable direct-bandgap, blue-shifted photoluminescence emission, and unique phonon modes, which are consistent with the previous theoretical predictions. It also confirms excellent second harmonic generation and high hole mobility of 724 cm2 V−1 s−1. The realization of ultrathin Ge(110) single crystal will provide an excellent candidate for application in electronics and optoelectronics.

17 Dec 00:56

[ASAP] A Polarization-Sensitive Self-Powered Photodetector Based on a p-WSe2/TaIrTe4/n-MoS2 van der Waals Heterojunction

by Xiaoning Han, Peiting Wen, Li Zhang, Wei Gao, Hongyu Chen, Feng Gao, Shihao Zhang, Nengjie Huo, Bingsuo Zou, and Jingbo Li

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ACS Applied Materials & Interfaces
DOI: 10.1021/acsami.1c19526
17 Dec 00:54

Fermi Level Pinning Dependent 2D Semiconductor Devices: Challenges and Prospects

by Xiaochi Liu, Min Sup Choi, Euyheon Hwang, Won Jong Yoo, Jian Sun
Fermi Level Pinning Dependent 2D Semiconductor Devices: Challenges and Prospects

New and in-depth insight into the fundamental mechanism of Fermi level pinning in 2D semiconductor devices is presented in this review. The related device characteristics and contact strategies utilizing both the Fermi level pinning and depinning are introduced.


Abstract

Motivated by the high expectation for efficient electrostatic modulation of charge transport at very low voltages, atomically thin 2D materials with a range of bandgaps are investigated extensively for use in future semiconductor devices. However, researchers face formidable challenges in 2D device processing mainly originated from the out-of-plane van der Waals (vdW) structure of ultrathin 2D materials. As major challenges, untunable Schottky barrier height and the corresponding strong Fermi level pinning (FLP) at metal interfaces are observed unexpectedly with 2D vdW materials, giving rise to unmodulated semiconductor polarity, high contact resistance, and lowered device mobility. Here, FLP observed from recently developed 2D semiconductor devices is addressed differently from those observed from conventional semiconductor devices. It is understood that the observed FLP is attributed to inefficient doping into 2D materials, vdW gap present at the metal interface, and hybridized compounds formed under contacting metals. To provide readers with practical guidelines for the design of 2D devices, the impact of FLP occurring in 2D semiconductor devices is further reviewed by exploring various origins responsible for the FLP, effects of FLP on 2D device performances, and methods for improving metallic contact to 2D materials.

17 Dec 00:53

Super-Nernstian ion sensitive field-effect transistor exploiting charge screening in WSe2/MoS2 heterostructure

by Sooraj Sanjay

npj 2D Materials and Applications, Published online: 16 December 2021; doi:10.1038/s41699-021-00273-6

Super-Nernstian ion sensitive field-effect transistor exploiting charge screening in WSe2/MoS2 heterostructure
17 Dec 00:52

Tuning the Schottky barrier height in a multiferroic In2Se3/Fe3GeTe2 van der Waals heterojunction

Nanoscale, 2022, 14,4114-4122
DOI: 10.1039/D1NR06906C, Paper
M. Javaid, Patrick D. Taylor, Sherif Abdulkader Tawfik, Michelle J. S. Spencer
Our work presents a tuneable and switchable Schottky barrier without the need to apply any external electric field or strain, which promotes the controllability of carrier transport in high-density memory devices.
The content of this RSS Feed (c) The Royal Society of Chemistry
17 Dec 00:52

Stacking-dependent optical properties in bilayer WSe2

Nanoscale, 2022, 14,147-156
DOI: 10.1039/D1NR06119D, Paper
Kathleen M. McCreary, Madeleine Phillips, Hsun-Jen Chuang, Darshana Wickramaratne, Matthew Rosenberger, C. Stephen Hellberg, Berend T. Jonker
The photoluminescence, Raman, and reflectance contrast features of bilayer WSe2 are strongly dependent on stacking angle.
The content of this RSS Feed (c) The Royal Society of Chemistry
17 Dec 00:52

Enhanced third harmonic generation in ultrathin free-standing β-Ga2O3 nanomembranes: study on surface and bulk contribution

Nanoscale, 2022, 14,175-186
DOI: 10.1039/D1NR06259J, Paper
Gao Yi, Sangheon Jeon, Young Woo Kwon, Jongkyoon Park, Duy Anh Nguyen, C. S. Suchand Sandeep, Wan Sik Hwang, Suck Won Hong, Seungchul Kim, Young-Jin Kim
Third harmonic generation from freestanding and glass-supported ultrathin β-Ga2O3 nanomembranes. The surface and bulk contributions of nonlinear optical harmonic generation.
The content of this RSS Feed (c) The Royal Society of Chemistry
17 Dec 00:52

Transition-metal nitride halide dielectrics for transition-metal dichalcogenide transistors

Nanoscale, 2022, 14,157-165
DOI: 10.1039/D1NR05250K, Paper
Mehrdad Rostami Osanloo, Ali Saadat, Maarten L. Van de Put, Akash Laturia, William G. Vandenberghe
Using first-principles calculations, we investigate six transition-metal nitride halides as potential vdW dielectrics for transition metal dichalcogenide channel transistors. We identify the best combinations for the p-MOS transistor technology.
The content of this RSS Feed (c) The Royal Society of Chemistry
17 Dec 00:47

[ASAP] Nanowire-to-Nanoribbon Conversion in Transition-Metal Chalcogenides: Implications for One-Dimensional Electronics and Optoelectronics

by Hong En Lim, Zheng Liu, Juan Kim, Jiang Pu, Hiroshi Shimizu, Takahiko Endo, Yusuke Nakanishi, Taishi Takenobu, and Yasumitsu Miyata

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ACS Applied Nano Materials
DOI: 10.1021/acsanm.1c03160
17 Dec 00:46

[ASAP] Atomic Layer MoTe2 Field-Effect Transistors and Monolithic Logic Circuits Configured by Scanning Laser Annealing

by Xia Liu, Arnob Islam, Ning Yang, Bradley Odhner, Mary Anne Tupta, Jing Guo, and Philip X.-L. Feng

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ACS Nano
DOI: 10.1021/acsnano.1c07169
17 Dec 00:46

A room-temperature gate-tunable bipolar valley Hall effect in molybdenum disulfide/tungsten diselenide heterostructures

by Chongyun Jiang

Nature Electronics, Published online: 16 December 2021; doi:10.1038/s41928-021-00686-7

A molybdenum disulfide/tungsten diselenide van der Waals heterostructure can exhibit a room-temperature valley Hall effect with electrically tunable magnitude and polarity, which can be used to create a bipolar valleytronic transistor.
17 Dec 00:45

Selective sulfidation of metal compounds

by Caspar Stinn

Nature, Published online: 16 December 2021; doi:10.1038/s41586-021-04321-5

Selective sulfidation of metal compounds
16 Dec 00:52

Next-generation thermoelectric cooling modules based on high-performance Mg3(Bi,Sb)2 material

Publication date: 19 January 2022

Source: Joule, Volume 6, Issue 1

Author(s): Jiawei Yang, Guodong Li, Hangtian Zhu, Nan Chen, Tianbo Lu, Junling Gao, Liwei Guo, Junsen Xiang, Peijie Sun, Yuan Yao, Ronggui Yang, Huaizhou Zhao

15 Dec 00:43

Transition-metal nitride halide dielectrics for transition-metal dichalcogenide transistors

Nanoscale, 2021, Advance Article
DOI: 10.1039/D1NR05250K, Paper
Mehrdad Rostami Osanloo, Ali Saadat, Maarten L. Van de Put, Akash Laturia, William G. Vandenberghe
Using first-principles calculations, we investigate six transition-metal nitride halides as potential vdW dielectrics for transition metal dichalcogenide channel transistors. We identify the best combinations for the p-MOS transistor technology.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
15 Dec 00:42

B2N Monolayer: a Direct Band-Gap Semiconductor with High and Highly Anisotropic Carrier Mobility

Nanoscale, 2021, Accepted Manuscript
DOI: 10.1039/D1NR07054A, Paper
Shuyi Lin, Yu Guo, Meiling Xu, Jijun Zhao, Yiwei Liang, Xuanhao Yuan, Yiming Zhang, Feilong Wang, Jian Hao, Yinwei Li
Two-dimensional materials with a planar lattice, a suitable direct band-gap, high and highly anisotropic carrier mobility are desirable for the development of advanced field-effect transistors. Here we predict three thermodynamically...
The content of this RSS Feed (c) The Royal Society of Chemistry
15 Dec 00:42

[ASAP] Unconventional Reaction Phase Diagram for the Penetration Etching/Growth of Graphene Adlayers

by Changqing Shen, Bojun Wang, Yumeng Chen, Richard C. Stehle, Binjie Zheng, Fangzhu Qing, Xiaobin Niu, and Xuesong Li

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Chemistry of Materials
DOI: 10.1021/acs.chemmater.1c03402
15 Dec 00:41

Metallic Plasmonic Array Structures: Principles, Fabrications, Properties, and Applications (Adv. Mater. 50/2021)

by Kang Yang, Xu Yao, Bowen Liu, Bin Ren
Metallic Plasmonic Array Structures: Principles, Fabrications, Properties, and Applications (Adv. Mater. 50/2021)

Metallic Plasmonic Arrays

Metallic plasmonic array structures provide a powerful platform to control light–matter interactions and show fascinating, rich, and tunable optical properties through morphology and parameter engineering enabled by nanofabrication. In article number 2007988, Bowen Liu, Bin Ren, and co-workers review light-management mechanisms, fabrication techniques, and applications, such as plasmonic sensing, surface-enhanced spectroscopies, nanolasing, and perfect light absorption, for metallic plasmonic array structures.


15 Dec 00:39

[ASAP] Nonprecious Metal Borides: Emerging Electrocatalysts for Hydrogen Production

by Eunsoo Lee and Boniface P. T. Fokwa

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Accounts of Chemical Research
DOI: 10.1021/acs.accounts.1c00543
15 Dec 00:39

[ASAP] Data-Driven Studies of the Magnetic Anisotropy of Two-Dimensional Magnetic Materials

by Yiqi Xie, Georgios A. Tritsaris, Oscar Grånäs, and Trevor David Rhone

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The Journal of Physical Chemistry Letters
DOI: 10.1021/acs.jpclett.1c03783
15 Dec 00:38

[ASAP] Expeditiously Crystallized Pure Orthorhombic-Hf0.5Zr0.5O2 for Negative Capacitance Field Effect Transistors

by Haewon Cho, Pavan Pujar, Minsu Choi, Muhammad Naqi, Yongin Cho, Hyun Yeol Rho, Jaichan Lee, and Sunkook Kim

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ACS Applied Materials & Interfaces
DOI: 10.1021/acsami.1c21387
14 Dec 11:33

Complementary Metal–Oxide–Semiconductor Compatible 2D Layered Film‐Based Gas Sensors by Floating‐Gate Coupling Effect

by Po‐Hung Tan, Che‐Hao Hsu, Ying‐Chun Shen, Chien‐Ping Wang, Kun‐Lin Liou, Jiaw‐Ren Shih, Chrong Jung Lin, Ling Lee, Kuangye Wang, Hong‐Min Wu, Tsung‐Yu Chiang, Yue‐Der Chih, Jonathan Chang, Ya‐Chin King, Yu‐Lun Chueh
Complementary Metal–Oxide–Semiconductor Compatible 2D Layered Film-Based Gas Sensors by Floating-Gate Coupling Effect

A novel embedded sensing amplifier and readout scheme is developed for a 2D-layered SnSe2 CMOS-compatible gas sensor featuring high and adjustable sensitivity. This proposed sensor possesses the ability to operate at room temperature and suitable for low-power applications. Moreover, the calibration method and peripheral circuits proposed in this research endow low error, high density, and high sensitivity responses.


Abstract

A 2D SnSe2 layered film-based gas detector incorporating a floating-gate device coupled with metal interconnect wiring structures is proposed and demonstrated for the first time. Linear amplification can be readily implemented using a coupling ratio design, which refers to the capacitance ratio between the gate and device in the sense amplifier circuits. A sensitivity of 102 mV ppm−1 can be obtained using the 2D SnSe2 layered film with a thickness of 10 nm. The 2D SnSe2 layered film-based complementary metal–oxide–semiconductor (CMOS) gas detector features highly sensitive, wide, and adjustable dynamic ranges with a real-time response of the sub-ppm detection limit on NO2 gas. In addition, the synthesis process of the SnSe2 layered film can occur at a low temperature and be operated at room temperature. Furthermore, 3 × 3 gas detector arrays with peripheral circuits demonstrate the functionality of multiple gas detection simultaneously and 16 × 16 arrays with a decoder and other peripheral circuits are constructed and simulated, providing the spatial distribution of the gas concentration in a specific region. The performance of the proposed detector is comparable to that of the other state-of-the-art gas sensors.

14 Dec 01:02

Controlling the Nucleation and Growth of Ultrasmall Metal Nanoclusters with MoS2 Grain Boundaries

Nanoscale, 2021, Accepted Manuscript
DOI: 10.1039/D1NR07836D, Communication
Yongliang Shi, Muztoba Rabbani, Álvaro Vázquez-Mayagoitia, Jin Zhao, Wissam A Saidi
Stabilization of supported nanoclusters is key for different applications, including catalysis and plasmonics. Here we investigate the impact of grain boundaries in MoS2 on the nucleation and growth of Pt...
The content of this RSS Feed (c) The Royal Society of Chemistry
14 Dec 01:01

Coulomb Drag between a Carbon Nanotube and Monolayer Graphene

by Laurel Anderson, Austin Cheng, Takashi Taniguchi, Kenji Watanabe, and Philip Kim

Author(s): Laurel Anderson, Austin Cheng, Takashi Taniguchi, Kenji Watanabe, and Philip Kim

Measurements of the Coulomb drag between a nanotube and graphene show subtleties depending on temperature, carrier density, and distance in both linear and nonlinear regimes.


[Phys. Rev. Lett. 127, 257701] Published Mon Dec 13, 2021

14 Dec 01:01

Synthesis of new two‐dimensional titanium carbonitride Ti2C0.5N0.5Tx MXene and its performance as an electrode material for sodium‐ion battery

by Kun Liang, Anika Tabassum, Ahmad Majed, Chaochao Dun, Feipeng Yang, Jinghua Guo, Kaitlyn Prenger, Jeffrey J. Urban, Michael Naguib
Synthesis of new two-dimensional titanium carbonitride Ti2C0.5N0.5Tx MXene and its performance as an electrode material for sodium-ion battery

Synthesis of new two-dimensional titanium carbonitride Ti2C0.5N0.5T x MXene and its performance as an electrode material for sodium-ion battery


Abstract

Two-dimensional (2D) layered transition metal carbides/nitrides, called MXenes, are attractive alternative electrode materials for electrochemical energy storage. Owing to their metallic electrical conductivity and low ion diffusion barrier, MXenes are promising anode materials for sodium-ion batteries (SIBs). Herein, we report on a new 2D carbonitride MXene, viz., Ti2C0.5N0.5T x (T x stands for surface terminations), and the only second carbonitride after Ti3CNT x so far. A new type of in situ HF (HCl/KF) etching condition was employed to synthesize multilayer Ti2C0.5N0.5T x powders from Ti2AlC0.5N0.5. Spontaneous intercalation of tetramethylammonium followed by sonication in water allowed for large-scale delamination of this new titanium carbonitride into 2D sheets. Multilayer Ti2C0.5N0.5T x powders showed higher specific capacities and larger electroactive surface area than those of Ti2CT x powders. Multilayer Ti2C0.5N0.5T x powders show a specific capacity of 182 mAh g−1 at 20 mA g−1, the highest among all reported MXene electrodes as SIBs with excellent cycling stability.

14 Dec 01:00

[ASAP] High-Throughput Production of 1T MoS2 Monolayers Based on Controllable Conversion of Mo-Based MXenes

by Zhiguo Du, Yu Guo, Haiyang Wang, Jianan Gu, Yongzheng Zhang, Zongju Cheng, Bin Li, Songmei Li, and Shubin Yang

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ACS Nano
DOI: 10.1021/acsnano.1c05268
13 Dec 13:49

2D Material‐Based Optical Biosensor: Status and Prospect

by Zong‐Lin Lei, Bo Guo
2D Material-Based Optical Biosensor: Status and Prospect

The combination of 2D materials and optical sensors has become a hot research topic in recent years. Here, the recent progress of optical biosensors based on various 2D materials (graphene, black phosphorus, and MXenes) is reviewed. Furthermore, the applications of these sensors in biological imaging, food safety, pollution prevention and biomedicine are discussed. Finally, their future development trend is prospected.


Abstract

The combination of 2D materials and optical biosensors has become a hot research topic in recent years. Graphene, transition metal dichalcogenides, black phosphorus, MXenes, and other 2D materials (metal oxides and degenerate semiconductors) have unique optical properties and play a unique role in the detection of different biomolecules. Through the modification of 2D materials, optical biosensor has the advantages that traditional sensors (such as electrical sensing) do not have, and the sensitivity and detection limit are greatly improved. Here, optical biosensors based on different 2D materials are reviewed. First, various detection methods of biomolecules, including surface plasmon resonance (SPR), fluorescence resonance energy transfer (FRET), and evanescent wave and properties, preparation and integration strategies of 2D material, are introduced in detail. Second, various biosensors based on 2D materials are summarized. Furthermore, the applications of these optical biosensors in biological imaging, food safety, pollution prevention/control, and biological medicine are discussed. Finally, the future development of optical biosensors is prospected. It is believed that with their in-depth research in the laboratory, optical biosensors will gradually become commercialized and improve people's quality of life in many aspects.

13 Dec 13:48

Layered 2D Nanomaterials to Tailor Friction and Wear in Machine Elements—A Review

by Max Marian, Diana Berman, Alberto Rota, Robert L. Jackson, Andreas Rosenkranz
Layered 2D Nanomaterials to Tailor Friction and Wear in Machine Elements—A Review

Recent advances in 2D nanomaterials allow to address scientific and industrial challenges associated with the design of mechanical systems with improved friction and wear performance. In this review, the beneficial properties of layered 2D materials that make them excellent candidates for efficient friction and wear reduction in dry-running and boundary lubricated machine components are summarized.


Abstract

Recent advances in 2D nanomaterials, such as graphene, transition metal dichalcogenides, boron nitride, MXenes, allow not only to discover several new nanoscale phenomena but also to address the scientific and industrial challenges associated with the design of systems with desired physical properties. One of the great challenges for mechanical systems is associated with addressing friction and wear problems in machine elements. In this review, the beneficial properties of layered 2D materials that enable the control of their tribological behavior and make them excellent candidates for efficient friction and wear reduction in dry-running and boundary lubricated machine components are summarized. The recent studies highlighting the successful implementation of 2D structures when used as solid lubricant coatings or reinforcement phases in composites for various machine components including sliding and rolling bearings, gears, and seals are overviewed. The examples presented in the studies demonstrate the great potential for 2D materials to address the energy-saving needs by friction and wear reduction.