
Jiuxiang Dai
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[ASAP] Few-Layered MoSe2 Nanosheets Confined in N,P-Doped Carbon Polyhedra for Sodium/Potassium-Ion Storage
[ASAP] Transition Metal-Free Half-Metallicity in Two-Dimensional Gallium Nitride with a Quasi-Flat Band

Systemic consequences of disorder in magnetically self-organized topological MnBi 2 Te 4 /(Bi 2 Te 3 ) n superlattices
Self‐Limiting Synthesis of Ultrathin Ge(110) Single Crystal via Liquid Metal
2D Ge(110) single crystal is first synthesized via a gallium-associated self-limiting growth mechanism, which exhibits anisotropic honeycomb structure, uniformly incremental lattice, blue-shifted photoluminescence emission, unique phonon modes, and excellent second harmonic generation. Notably, it shows high hole mobility of 724 cm2 V−1 s−1, which will provide an excellent candidate for application in electronics and optoelectronics.
Abstract
Germanium, the prime applied semiconductor, is widely used in solid-state electronics and photoelectronics. Unfortunately, since the 3D diamond-like structure with strong covalent bonds impedes the 2D anisotropic growth, only the examples of ultrathin Ge along the (111) plane have been investigated, much less to the controllable synthesis along another crystal surface. Meanwhile, Ge(111) flakes are limited in semiconductor applications because of their gapless property. Here, ultrathin Ge(110) single crystal is synthesized with semiconductive property via gallium-associated self-limiting growth. The obtained ultrathin Ge(110) single crystal exhibits anisotropic honeycomb structure, uniformly incremental lattice, wide tunable direct-bandgap, blue-shifted photoluminescence emission, and unique phonon modes, which are consistent with the previous theoretical predictions. It also confirms excellent second harmonic generation and high hole mobility of 724 cm2 V−1 s−1. The realization of ultrathin Ge(110) single crystal will provide an excellent candidate for application in electronics and optoelectronics.
[ASAP] A Polarization-Sensitive Self-Powered Photodetector Based on a p-WSe2/TaIrTe4/n-MoS2 van der Waals Heterojunction

Fermi Level Pinning Dependent 2D Semiconductor Devices: Challenges and Prospects
New and in-depth insight into the fundamental mechanism of Fermi level pinning in 2D semiconductor devices is presented in this review. The related device characteristics and contact strategies utilizing both the Fermi level pinning and depinning are introduced.
Abstract
Motivated by the high expectation for efficient electrostatic modulation of charge transport at very low voltages, atomically thin 2D materials with a range of bandgaps are investigated extensively for use in future semiconductor devices. However, researchers face formidable challenges in 2D device processing mainly originated from the out-of-plane van der Waals (vdW) structure of ultrathin 2D materials. As major challenges, untunable Schottky barrier height and the corresponding strong Fermi level pinning (FLP) at metal interfaces are observed unexpectedly with 2D vdW materials, giving rise to unmodulated semiconductor polarity, high contact resistance, and lowered device mobility. Here, FLP observed from recently developed 2D semiconductor devices is addressed differently from those observed from conventional semiconductor devices. It is understood that the observed FLP is attributed to inefficient doping into 2D materials, vdW gap present at the metal interface, and hybridized compounds formed under contacting metals. To provide readers with practical guidelines for the design of 2D devices, the impact of FLP occurring in 2D semiconductor devices is further reviewed by exploring various origins responsible for the FLP, effects of FLP on 2D device performances, and methods for improving metallic contact to 2D materials.
Super-Nernstian ion sensitive field-effect transistor exploiting charge screening in WSe2/MoS2 heterostructure
npj 2D Materials and Applications, Published online: 16 December 2021; doi:10.1038/s41699-021-00273-6
Super-Nernstian ion sensitive field-effect transistor exploiting charge screening in WSe2/MoS2 heterostructureTuning the Schottky barrier height in a multiferroic In2Se3/Fe3GeTe2 van der Waals heterojunction
DOI: 10.1039/D1NR06906C, Paper
Our work presents a tuneable and switchable Schottky barrier without the need to apply any external electric field or strain, which promotes the controllability of carrier transport in high-density memory devices.
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Stacking-dependent optical properties in bilayer WSe2
DOI: 10.1039/D1NR06119D, Paper
The photoluminescence, Raman, and reflectance contrast features of bilayer WSe2 are strongly dependent on stacking angle.
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Enhanced third harmonic generation in ultrathin free-standing β-Ga2O3 nanomembranes: study on surface and bulk contribution
DOI: 10.1039/D1NR06259J, Paper
Third harmonic generation from freestanding and glass-supported ultrathin β-Ga2O3 nanomembranes. The surface and bulk contributions of nonlinear optical harmonic generation.
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Transition-metal nitride halide dielectrics for transition-metal dichalcogenide transistors
DOI: 10.1039/D1NR05250K, Paper
Using first-principles calculations, we investigate six transition-metal nitride halides as potential vdW dielectrics for transition metal dichalcogenide channel transistors. We identify the best combinations for the p-MOS transistor technology.
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[ASAP] Nanowire-to-Nanoribbon Conversion in Transition-Metal Chalcogenides: Implications for One-Dimensional Electronics and Optoelectronics

[ASAP] Atomic Layer MoTe2 Field-Effect Transistors and Monolithic Logic Circuits Configured by Scanning Laser Annealing

A room-temperature gate-tunable bipolar valley Hall effect in molybdenum disulfide/tungsten diselenide heterostructures
Nature Electronics, Published online: 16 December 2021; doi:10.1038/s41928-021-00686-7
A molybdenum disulfide/tungsten diselenide van der Waals heterostructure can exhibit a room-temperature valley Hall effect with electrically tunable magnitude and polarity, which can be used to create a bipolar valleytronic transistor.Selective sulfidation of metal compounds
Nature, Published online: 16 December 2021; doi:10.1038/s41586-021-04321-5
Selective sulfidation of metal compoundsNext-generation thermoelectric cooling modules based on high-performance Mg3(Bi,Sb)2 material
Publication date: 19 January 2022
Source: Joule, Volume 6, Issue 1
Author(s): Jiawei Yang, Guodong Li, Hangtian Zhu, Nan Chen, Tianbo Lu, Junling Gao, Liwei Guo, Junsen Xiang, Peijie Sun, Yuan Yao, Ronggui Yang, Huaizhou Zhao
Transition-metal nitride halide dielectrics for transition-metal dichalcogenide transistors
DOI: 10.1039/D1NR05250K, Paper
Using first-principles calculations, we investigate six transition-metal nitride halides as potential vdW dielectrics for transition metal dichalcogenide channel transistors. We identify the best combinations for the p-MOS transistor technology.
To cite this article before page numbers are assigned, use the DOI form of citation above.
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B2N Monolayer: a Direct Band-Gap Semiconductor with High and Highly Anisotropic Carrier Mobility
DOI: 10.1039/D1NR07054A, Paper
Two-dimensional materials with a planar lattice, a suitable direct band-gap, high and highly anisotropic carrier mobility are desirable for the development of advanced field-effect transistors. Here we predict three thermodynamically...
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[ASAP] Unconventional Reaction Phase Diagram for the Penetration Etching/Growth of Graphene Adlayers

Metallic Plasmonic Array Structures: Principles, Fabrications, Properties, and Applications (Adv. Mater. 50/2021)
Metallic Plasmonic Arrays
Metallic plasmonic array structures provide a powerful platform to control light–matter interactions and show fascinating, rich, and tunable optical properties through morphology and parameter engineering enabled by nanofabrication. In article number 2007988, Bowen Liu, Bin Ren, and co-workers review light-management mechanisms, fabrication techniques, and applications, such as plasmonic sensing, surface-enhanced spectroscopies, nanolasing, and perfect light absorption, for metallic plasmonic array structures.
[ASAP] Nonprecious Metal Borides: Emerging Electrocatalysts for Hydrogen Production

[ASAP] Data-Driven Studies of the Magnetic Anisotropy of Two-Dimensional Magnetic Materials

[ASAP] Expeditiously Crystallized Pure Orthorhombic-Hf0.5Zr0.5O2 for Negative Capacitance Field Effect Transistors

Complementary Metal–Oxide–Semiconductor Compatible 2D Layered Film‐Based Gas Sensors by Floating‐Gate Coupling Effect
A novel embedded sensing amplifier and readout scheme is developed for a 2D-layered SnSe2 CMOS-compatible gas sensor featuring high and adjustable sensitivity. This proposed sensor possesses the ability to operate at room temperature and suitable for low-power applications. Moreover, the calibration method and peripheral circuits proposed in this research endow low error, high density, and high sensitivity responses.
Abstract
A 2D SnSe2 layered film-based gas detector incorporating a floating-gate device coupled with metal interconnect wiring structures is proposed and demonstrated for the first time. Linear amplification can be readily implemented using a coupling ratio design, which refers to the capacitance ratio between the gate and device in the sense amplifier circuits. A sensitivity of 102 mV ppm−1 can be obtained using the 2D SnSe2 layered film with a thickness of 10 nm. The 2D SnSe2 layered film-based complementary metal–oxide–semiconductor (CMOS) gas detector features highly sensitive, wide, and adjustable dynamic ranges with a real-time response of the sub-ppm detection limit on NO2 gas. In addition, the synthesis process of the SnSe2 layered film can occur at a low temperature and be operated at room temperature. Furthermore, 3 × 3 gas detector arrays with peripheral circuits demonstrate the functionality of multiple gas detection simultaneously and 16 × 16 arrays with a decoder and other peripheral circuits are constructed and simulated, providing the spatial distribution of the gas concentration in a specific region. The performance of the proposed detector is comparable to that of the other state-of-the-art gas sensors.
Controlling the Nucleation and Growth of Ultrasmall Metal Nanoclusters with MoS2 Grain Boundaries
DOI: 10.1039/D1NR07836D, Communication
Stabilization of supported nanoclusters is key for different applications, including catalysis and plasmonics. Here we investigate the impact of grain boundaries in MoS2 on the nucleation and growth of Pt...
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Coulomb Drag between a Carbon Nanotube and Monolayer Graphene
Author(s): Laurel Anderson, Austin Cheng, Takashi Taniguchi, Kenji Watanabe, and Philip Kim
Measurements of the Coulomb drag between a nanotube and graphene show subtleties depending on temperature, carrier density, and distance in both linear and nonlinear regimes.

[Phys. Rev. Lett. 127, 257701] Published Mon Dec 13, 2021
Synthesis of new two‐dimensional titanium carbonitride Ti2C0.5N0.5Tx MXene and its performance as an electrode material for sodium‐ion battery
Synthesis of new two-dimensional titanium carbonitride Ti2C0.5N0.5T x MXene and its performance as an electrode material for sodium-ion battery
Abstract
Two-dimensional (2D) layered transition metal carbides/nitrides, called MXenes, are attractive alternative electrode materials for electrochemical energy storage. Owing to their metallic electrical conductivity and low ion diffusion barrier, MXenes are promising anode materials for sodium-ion batteries (SIBs). Herein, we report on a new 2D carbonitride MXene, viz., Ti2C0.5N0.5T x (T x stands for surface terminations), and the only second carbonitride after Ti3CNT x so far. A new type of in situ HF (HCl/KF) etching condition was employed to synthesize multilayer Ti2C0.5N0.5T x powders from Ti2AlC0.5N0.5. Spontaneous intercalation of tetramethylammonium followed by sonication in water allowed for large-scale delamination of this new titanium carbonitride into 2D sheets. Multilayer Ti2C0.5N0.5T x powders showed higher specific capacities and larger electroactive surface area than those of Ti2CT x powders. Multilayer Ti2C0.5N0.5T x powders show a specific capacity of 182 mAh g−1 at 20 mA g−1, the highest among all reported MXene electrodes as SIBs with excellent cycling stability.
[ASAP] High-Throughput Production of 1T MoS2 Monolayers Based on Controllable Conversion of Mo-Based MXenes

2D Material‐Based Optical Biosensor: Status and Prospect
The combination of 2D materials and optical sensors has become a hot research topic in recent years. Here, the recent progress of optical biosensors based on various 2D materials (graphene, black phosphorus, and MXenes) is reviewed. Furthermore, the applications of these sensors in biological imaging, food safety, pollution prevention and biomedicine are discussed. Finally, their future development trend is prospected.
Abstract
The combination of 2D materials and optical biosensors has become a hot research topic in recent years. Graphene, transition metal dichalcogenides, black phosphorus, MXenes, and other 2D materials (metal oxides and degenerate semiconductors) have unique optical properties and play a unique role in the detection of different biomolecules. Through the modification of 2D materials, optical biosensor has the advantages that traditional sensors (such as electrical sensing) do not have, and the sensitivity and detection limit are greatly improved. Here, optical biosensors based on different 2D materials are reviewed. First, various detection methods of biomolecules, including surface plasmon resonance (SPR), fluorescence resonance energy transfer (FRET), and evanescent wave and properties, preparation and integration strategies of 2D material, are introduced in detail. Second, various biosensors based on 2D materials are summarized. Furthermore, the applications of these optical biosensors in biological imaging, food safety, pollution prevention/control, and biological medicine are discussed. Finally, the future development of optical biosensors is prospected. It is believed that with their in-depth research in the laboratory, optical biosensors will gradually become commercialized and improve people's quality of life in many aspects.
Layered 2D Nanomaterials to Tailor Friction and Wear in Machine Elements—A Review
Recent advances in 2D nanomaterials allow to address scientific and industrial challenges associated with the design of mechanical systems with improved friction and wear performance. In this review, the beneficial properties of layered 2D materials that make them excellent candidates for efficient friction and wear reduction in dry-running and boundary lubricated machine components are summarized.
Abstract
Recent advances in 2D nanomaterials, such as graphene, transition metal dichalcogenides, boron nitride, MXenes, allow not only to discover several new nanoscale phenomena but also to address the scientific and industrial challenges associated with the design of systems with desired physical properties. One of the great challenges for mechanical systems is associated with addressing friction and wear problems in machine elements. In this review, the beneficial properties of layered 2D materials that enable the control of their tribological behavior and make them excellent candidates for efficient friction and wear reduction in dry-running and boundary lubricated machine components are summarized. The recent studies highlighting the successful implementation of 2D structures when used as solid lubricant coatings or reinforcement phases in composites for various machine components including sliding and rolling bearings, gears, and seals are overviewed. The examples presented in the studies demonstrate the great potential for 2D materials to address the energy-saving needs by friction and wear reduction.