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25 May 02:30

[ASAP] Low-Temperature Synthesis of Boron Nitride as a Large-Scale Passivation and Protection Layer for Two-Dimensional Materials and High-Performance Devices

by Zhanjie Lu, Meijie Zhu, Yifan Liu, Gehui Zhang, Zuoquan Tan, Xiaotian Li, Shuaishuai Xu, Le Wang, Ruifen Dou, Bin Wang, Yuan Yao, Zhiyong Zhang, Jichen Dong, Zhihai Cheng, and Shanshan Chen

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ACS Applied Materials & Interfaces
DOI: 10.1021/acsami.2c02803
25 May 02:25

[ASAP] Laser Patterning of the Sb2O3 Atomic Thin Layer Assisted by Near Field Heating

by Jundong Zhang, Baojun Pan, Weitao Su, Lijie Zhang, Fei Chen, and Hong-Wei Lu

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ACS Applied Nano Materials
DOI: 10.1021/acsanm.2c00904
24 May 15:34

Atomic-scale friction between single-asperity contacts unveiled through in situ transmission electron microscopy

by Xiang Wang

Nature Nanotechnology, Published online: 23 May 2022; doi:10.1038/s41565-022-01126-z

Friction and wear at the atomic scale are hard to capture in experiment. Real-time in situ investigations of the countermotion of two touching tungsten asperities by means of high-resolution transmission electron microscopy unveil discrete stick–slip friction and molecular dynamics simulations provide insights into the sliding pathway of the atoms at the interface.
24 May 15:33

Integrating 2D materials and metal electrodes

by Soon-Yong Kwon

Nature Electronics, Published online: 23 May 2022; doi:10.1038/s41928-022-00770-6

Graphene can be used as a donor substrate to create van der Waals contacts between two-dimensional semiconductors and a variety of three-dimensional metal electrodes, including strongly adhering metals.
24 May 15:33

Graphene-assisted metal transfer printing for wafer-scale integration of metal electrodes and two-dimensional materials

by Guanyu Liu

Nature Electronics, Published online: 23 May 2022; doi:10.1038/s41928-022-00764-4

A variety of metal electrodes can be deposited on a graphene substrate, delaminated and transferred onto two-dimensional semiconductors to form high-quality metal–semiconductor interfaces.
24 May 15:29

[ASAP] Viscous Solvent-Assisted Planetary Ball Milling for the Scalable Production of Large Ultrathin Two-Dimensional Materials

by Yicong Zhou, Lanshu Xu, Minsu Liu, Zheng Qi, Wenbo Wang, Jiuyi Zhu, Shaohua Chen, Kuang Yu, Yang Su, Baofu Ding, Ling Qiu, and Hui-Ming Cheng

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ACS Nano
DOI: 10.1021/acsnano.1c11097
24 May 15:28

Resonant Scattering in Proximity‐Coupled Graphene/Superconducting Mo2C Heterostructures

by Meng Hao, Chuan Xu, Cheng Wang, Zhen Liu, Su Sun, Zhibo Liu, Hui‐Ming Cheng, Wencai Ren, Ning Kang
Resonant Scattering in Proximity-Coupled Graphene/Superconducting Mo2C Heterostructures

Directly grown graphene/Mo2C vertical heterostructures provide an ideal platform for exploring the interplay of massless Dirac fermion and superconductivity. This low-temperature transport reveals the geometric resonance by the interaction of the carriers with the boundaries of the potential well formed at the graphene/Mo2C interface, and the potential well can be effectively modified through superconducting proximity effect in heterostructures.


Abstract

The realization of high-quality heterostructures or hybrids of graphene and superconductor is crucial for exploring various novel quantum phenomena and devices engineering. Here, the electronic transport on directly grown high-quality graphene/Mo2C vertical heterostructures with clean and sharp interface is comprehensively investigated. Owing to the strong interface coupling, the graphene layer feels an effective confinement potential well imposed by two-dimensional (2D) Mo2C crystal. Employing cross junction device geometry, a series of resonance-like magnetoresistance peaks are observed at low temperatures. The temperature and gate voltage dependences of the observed resonance peaks give evidence for geometric resonance of electron cyclotron orbits with the formed potential well. Moreover, it is found that both the amplitude of resonance peaks and conductance fluctuation exhibit different temperature-dependent behaviors below the superconducting transition temperature of 2D Mo2C, indicating the correlation of quantum fluctuations and superconductivity. This study offers a promising route toward integrating graphene with 2D superconducting materials, and establishes a new way to investigate the interplay of massless Dirac fermion and superconductivity based on graphene/2D superconductor vertical heterostructures.

24 May 15:27

[ASAP] Theoretical Analysis of the Nanoscale Composition, Tip-Enhanced Raman Spectroscopy, and Electronic Properties of Alloys in 2D MoS2–WS2 Heterostructures

by Juan M. Marmolejo-Tejada, J. Pierce Fix, Patrick Kung, Nicholas J. Borys, and Martín A. Mosquera

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The Journal of Physical Chemistry C
DOI: 10.1021/acs.jpcc.2c01535
24 May 15:27

Direct observation of contact resistivity for monolayer TMD based junctions via PL spectroscopy

Nanoscale, 2022, 14,8260-8270
DOI: 10.1039/D2NR01504H, Communication
Linglong Zhang, Yilin Tang, Han Yan, Tanju Yildirim, Shunshun Yang, Haizeng Song, Xiaowei Zhang, Fuguo Tian, Zhongzhong Luo, Jiajie Pei, Qi Yang, Yixin Xu, Xiaoying Song, Ahmed Raza Khan, Sihao Xia, Xueqian Sun, Bo Wen, Fei Zhou, Weiwei Li, Youwen Liu, Han Zhang
We report a simple, rapid and low-cost method to study the tunnel barrier dominated contact resistance of mTMD based junctions through PL spectroscopy.
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24 May 15:26

Anomalous enhancement oxidation of few-layer MoS2 and MoS2/h-BN heterostructure

Abstract

Because of profound applications of two-dimensional molybdenum disulfide (MoS2) and its heterostructures in electronics, its thermal stability has been spurred substantial interest. We employ a precision muffle furnace at a series of increasing temperatures up to 340 °C to study the oxidation behavior of continuous MoS2 films by either directly growing mono- and few-layer MoS2 on SiO2/Si substrate, or by mechanically transferring monolayer MoS2 or hexagonal boron nitride (h-BN) onto monolayer MoS2 substrate. Results show that monolayer MoS2 can withstand high temperature at 340 °C with less oxidation while the few-layer MoS2 films are completely oxidized just at 280 °C, resulting from the growth-induced tensile strain in few-layer MoS2. When the tensile strain of films is released by transfer method, the stacked few-layer MoS2 films exhibit superior thermal stability and typical layer-by-layer oxidation behavior at similarly high temperature. Counterintuitively, for the MoS2/h-BN heterostructure, the h-BN film itself stacked on top is not damaged and forms many bubbles at 340 °C, whereas the underlying monolayer MoS2 film is oxidized completely. By comprehensively using various experimental characterization and molecular dynamics calculations, such anomalous oxidation behavior of MoS2/h-BN heterostructure is mainly due to the increased tensile strain in MoS2 film at elevated temperature.

24 May 12:45

On-chip integrated process-programmable sub-10 nm thick molecular devices switching between photomultiplication and memristive behaviour

by Tianming Li

Nature Communications, Published online: 24 May 2022; doi:10.1038/s41467-022-30498-y

Developing molecular electronics is challenged by integrating fragile organic molecules into modern micro/nanoelectronics based on inorganic semiconductors. Li et al. apply rolled-up nanotechnology to assemble on-chip molecular devices, which can be switched between photodiodes and volatile memristors.
24 May 12:45

Blue-shifted and strongly-enhanced light emission in transition-metal dichalcogenide twisted heterobilayers

by Jung Sun Ko

npj 2D Materials and Applications, Published online: 24 May 2022; doi:10.1038/s41699-022-00308-6

Blue-shifted and strongly-enhanced light emission in transition-metal dichalcogenide twisted heterobilayers
24 May 12:45

Structure and morphology of 2H-MoTe2 monolayer on GaAs(111)B grown by molecular-beam epitaxy

by Akihiro Ohtake

npj 2D Materials and Applications, Published online: 24 May 2022; doi:10.1038/s41699-022-00310-y

Structure and morphology of 2H-MoTe2 monolayer on GaAs(111)B grown by molecular-beam epitaxy
24 May 12:45

Controlling surface porosity of graphene-based printed aerogels

by Binghan Zhou

npj 2D Materials and Applications, Published online: 24 May 2022; doi:10.1038/s41699-022-00312-w

Controlling surface porosity of graphene-based printed aerogels
23 May 11:28

Effect of crystallinity and thickness on thermal transport in layered PtSe2

by Alexandros El Sachat

npj 2D Materials and Applications, Published online: 23 May 2022; doi:10.1038/s41699-022-00311-x

Effect of crystallinity and thickness on thermal transport in layered PtSe2
23 May 02:37

Lanthanide-doped heterostructured nanocomposites toward advanced optical anti-counterfeiting and information storage

by Yao Xie

Light: Science & Applications, Published online: 20 May 2022; doi:10.1038/s41377-022-00813-9

Lanthanide-doped heterostructured nanocomposites were developed by using cation exchange method and successfully applied toward advanced optical anti-counterfeiting and information storage
23 May 02:37

[ASAP] Understanding the Electric Double-Layer Structure, Capacitance, and Charging Dynamics

by Jianzhong Wu

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Chemical Reviews
DOI: 10.1021/acs.chemrev.2c00097
22 May 03:42

A Bionic Interface to Suppress the Coffee‐Ring Effect for Reliable and Flexible Perovskite Modules with a Near‐90% Yield Rate

by Baojin Fan, Jian Xiong, Yanyan Zhang, Chenxiang Gong, Feng Li, Xiangchuan Meng, Xiaotian Hu, Zhongyi Yuan, Fuyi Wang, Yiwang Chen
A Bionic Interface to Suppress the Coffee-Ring Effect for Reliable and Flexible Perovskite Modules with a Near-90% Yield Rate

The construction of a superhydrophilic bionic interface layer (Bio-IL) significantly suppresses the coffee-ring effect during printing of large-area perovskite films via regulating the nucleation rate (υN) and radial transport rate (υRT) of the perovskite precursor, which induces a homogeneous large-area flexible perovskite film and high-performance inverted flexible perovskite solar cells with an efficiency of 21.08%.


Abstract

The inhomogeneity, poor interfacial contact, and pinholes caused by the coffee-ring effect severely affect the printing reliability of flexible perovskite solar cells (PSCs). Herein, inspired by the bio-glue of barnacles, a bionic interface layer (Bio-IL) of NiO x /levodopa is introduced to suppress the coffee-ring effect during printing perovskite modules. The coordination effect of the sticky functional groups in Bio-IL can pin the three-phase contact line and restrain the transport of perovskite colloidal particles during the printing and evaporation process. Moreover, the sedimentation rate of perovskite precursor is accelerated due to the electrostatic attraction and rapid volatilization from an extraordinary wettability. The superhydrophilic Bio-IL affords an even spread over a large-area substrate, which boosts a complete and uniform liquid film for heterogeneous nucleation as well as crystallization. Perovskite films on different large-area substrates with negligible coffee-ring effect are printed. Consequently, inverted flexible PSCs and perovskite solar modules achieve a high efficiency of 21.08% and 16.87%, respectively. This strategy ensures a highly reliable reproducibility of printing PSCs with a near 90% yield rate.

22 May 03:37

2D molecular sieve with range of uses

Publication date: May 2022

Source: Materials Today, Volume 55

Author(s): Laurie Donaldson

22 May 03:35

Electronically Tunable Transparent Conductive Thin Films for Scalable Integration of 2D Materials with Passive 2D–3D Interfaces (Adv. Funct. Mater. 21/2022)

by Theresa Grünleitner, Alex Henning, Michele Bissolo, Armin Kleibert, Carlos A.F. Vaz, Andreas V. Stier, Jonathan J. Finley, Ian D. Sharp
Electronically Tunable Transparent Conductive Thin Films for Scalable Integration of 2D Materials with Passive 2D–3D Interfaces (Adv. Funct. Mater. 21/2022)

Passive 2D–3D Interfaces

In article number 2111343, Alex Henning, Ian D. Sharp, and co-workers develop a novel transparent and conductive support structure for the scalable integration and direct growth of 2D materials. The structure comprises a nanocrystalline carbon layer coated with nanometer-thin alumina and provides an electronically passive 2D–3D interface, which enables facile interfacial charge transport and significantly enhances the photoluminescence of monolayer MoS2.


22 May 03:34

Prediction of 2D IV–VI semiconductors: auxetic materials with direct bandgap and strong optical absorption

Nanoscale, 2022, 14,8463-8473
DOI: 10.1039/D2NR00818A, Paper
Kai Ren, Xikui Ma, Xiangjun Liu, Yujing Xu, Wenyi Huo, Weifeng Li, Gang Zhang
Auxetic materials are highly desirable for advanced applications because of their negative Poisson's ratios, which are rather scarce in two-dimensional materials.
The content of this RSS Feed (c) The Royal Society of Chemistry
22 May 03:30

Improving stability of MXenes

Abstract

Due to their superior hydrophilicity and conductivity, ultra-high volumetric capacitance, and rich surface-chemistry properties, MXenes exhibit unique and excellent performance in catalysis, energy storage, electromagnetic shielding, and life sciences. Since they are derived from ceramics (MAX phase) through etching, one of the challenges in MXenes preparation is the inevitable exposure of metal atoms on their surface and embedding of anions and cations. Because the as-obtained MXenes are always in a thermodynamically metastable state, they tend to react with trace oxygen or oxygen-containing groups to form metal oxides or degrade, leading to sharply declined activity and impaired performance. Therefore, improving the stability of MXenes-based materials is of practical significance in relevant applications. Unfortunately, there lacks a comprehensive review in the literature on relevant topics. To help promote the wide applications of MXenes, we review from the following aspects: (i) insights into the factors affecting the stability of MXenes-based materials, including oxidation of MXenes flakes, stability of MXenes colloidal solutions, and swelling and degradation of MXenes thin-film, (ii) strategies for enhancing the stability of MXenes-based materials by optimizing MAX phase synthesis and modifying the MXenes preparation, and (iii) techniques for further increasing the stability of freshly prepared MXenes-based materials via controlling the storage conditions, and forming shielding on the surface and/or edge of MXenes flakes. Finally, some outlooks are proposed on the future developments and challenges of highly active and stable MXenes. We aim to provide guidance for the design, preparation, and applications of MXenes-based materials with excellent stability and activity.

22 May 03:27

[ASAP] Remote Floating-Gate Field-Effect Transistor with 2‑Dimensional Reduced Graphene Oxide Sensing Layer for Reliable Detection of SARS-CoV‑2 Spike Proteins

by Hyun-June Jang, Xiaoyu Sui, Wen Zhuang, Xiaodan Huang, Min Chen, Xiaolei Cai, Yale Wang, Byunghoon Ryu, Haihui Pu, Nicholas Ankenbruck, Kathleen Beavis, Jun Huang, and Junhong Chen

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ACS Applied Materials & Interfaces
DOI: 10.1021/acsami.2c04969
22 May 03:26

[ASAP] Layer-Dependent Interlayer Antiferromagnetic Spin Reorientation in Air-Stable Semiconductor CrSBr

by Chen Ye, Cong Wang, Qiong Wu, Sheng Liu, Jiayuan Zhou, Guopeng Wang, Aljoscha Söll, Zdenek Sofer, Ming Yue, Xue Liu, Mingliang Tian, Qihua Xiong⊙, Wei Ji, and Xiao Renshaw Wang⬠

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ACS Nano
DOI: 10.1021/acsnano.2c01151
22 May 03:24

[ASAP] Large-Area, High-Specific-Power Schottky-Junction Photovoltaics from CVD-Grown Monolayer MoS2

by Kazi M. Islam, Timothy Ismael, Claire Luthy, Orhan Kizilkaya, and Matthew D. Escarra

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ACS Applied Materials & Interfaces
DOI: 10.1021/acsami.2c01650
22 May 03:24

[ASAP] Twist Angle Tuning of Moiré Exciton Polaritons in van der Waals Heterostructures

by Jamie M. Fitzgerald, Joshua J. P. Thompson, and Ermin Malic

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Nano Letters
DOI: 10.1021/acs.nanolett.2c01175
22 May 03:20

2D Transition Metal Dichalcogenide with Increased Entropy for Piezoelectric Electronics

by Yulong Chen, Ziao Tian, Xiang Wang, Nian Ran, Chen Wang, Anyang Cui, Huihui Lu, Miao Zhang, Zhongying Xue, Yongfeng Mei, Paul K. Chu, Jianjun Liu, Zhigao Hu, Zengfeng Di
2D Transition Metal Dichalcogenide with Increased Entropy for Piezoelectric Electronics

The 2D transition metal dichalcogenide alloy, Mo1− x W x S2, is synthesized to investigate the influence of configurational entropy on the piezoelectrical property. Mo0.46W0.54S2, in which two cations have similar concentrations and the maximum configurational entropy is attained, exhibits the best piezoelectric properties. Combined with excellent mechanical durability, a mechanical sensor based on the Mo0.46W0.54S2 alloy is demonstrated for real-time health monitoring.


Abstract

Piezoelectricity in 2D transition metal dichalcogenides (TMDs) has attracted considerable interest because of their excellent flexibility and high piezoelectric coefficient compared to conventional piezoelectric bulk materials. However, the ability to regulate the piezoelectric properties is limited because the entropy is constant for certain binary TMDs other than multielement ones. Herein, in order to increase the entropy, a ternary TMDs alloy, Mo1− x W x S2, with different W concentrations, is synthesized. The W concentration in the Mo1− x W x S2 alloy can be controlled precisely in the low-supersaturation synthesis and the entropy can be tuned accordingly. The Mo0.46W0.54S2 alloy (x = 0.54) has the highest configurational entropy and best piezoelectric properties, such as a piezoelectric coefficient of 4.22 pm V−1 and a piezoelectric output current of 150 pA at 0.24% strain. More importantly, it can be combined into a larger package to increase the output current to 600 pA to cater to self-powered applications. Combining with excellent mechanical durability, a mechanical sensor based on the Mo0.46W0.54S2 alloy is demonstrated for real-time health monitoring.

22 May 03:19

Atomically Sharp Lateral Superlattice Heterojunctions Built‐In Nitrogen‐Doped Nanoporous Graphene (Adv. Mater. 20/2022)

by Maria Tenorio, Cesar Moreno, Pol Febrer, Jesús Castro‐Esteban, Pablo Ordejón, Diego Peña, Miguel Pruneda, Aitor Mugarza
Atomically Sharp Lateral Superlattice Heterojunctions Built-In Nitrogen-Doped Nanoporous Graphene (Adv. Mater. 20/2022)

Superlattice Heterojunctions

In article number 2110099, Cesar Moreno, Diego Peña, Miguel Pruneda, Aitor Mugarza, and co-workers report the synthesis of an atomically precise nitrogen-doped nanoporous graphene that electronically behaves as a nanometer-scale 2D lateral superlattice heterostructure with unprecedented band discontinuities down to the single-bond limit. The atomically sharp nanoporous heterojunctions endow this nanomaterial with a multifunctionality that can be very relevant for photodetection, excitonic solar cells, water splitting, or selective nanosieving.


22 May 03:19

Compact Modeling Technology for the Simulation of Integrated Circuits Based on Graphene Field‐Effect Transistors

by Francisco Pasadas, Pedro C. Feijoo, Nikolaos Mavredakis, Aníbal Pacheco‐Sanchez, Ferney A. Chaves, David Jiménez
Compact Modeling Technology for the Simulation of Integrated Circuits Based on Graphene Field-Effect Transistors

The progress made toward the development of a modular compact modeling technology for graphene field-effect transistors under DC, transient, AC, and noise analysis, is reported. This includes non-idealities such as extrinsic-, short-channel-, traps-, self-heating-, and non-quasi-static-effects. An overview of the challenges ahead in graphene transistor modeling to enable computer-aided circuit design is also provided.


Abstract

The progress made toward the definition of a modular compact modeling technology for graphene field-effect transistors (GFETs) that enables the electrical analysis of arbitrary GFET-based integrated circuits is reported. A set of primary models embracing the main physical principles defines the ideal GFET response under DC, transient (time domain), AC (frequency domain), and noise (frequency domain) analysis. Another set of secondary models accounts for the GFET non-idealities, such as extrinsic-, short-channel-, trapping/detrapping-, self-heating-, and non-quasi static-effects, which can have a significant impact under static and/or dynamic operation. At both device and circuit levels, significant consistency is demonstrated between the simulation output and experimental data for relevant operating conditions. Additionally, a perspective of the challenges during the scale up of the GFET modeling technology toward higher technology readiness levels while drawing a collaborative scenario among fabrication technology groups, modeling groups, and circuit designers, is provided.

22 May 03:09

Low Temperature Heating of Silver‐Mediated Exfoliation of MoS2

by Max Heyl, Sarah Grützmacher, Steffen Rühl, Giovanni Ligorio, Norbert Koch, Emil J. W. List‐Kratochvil
Low Temperature Heating of Silver-Mediated Exfoliation of MoS2

Heating up the silver-mediated exfoliation of MoS2 enables exfoliation yield on par with the top performer gold for the first time. A temperature dependence of the exfoliation yield is observed, suggesting a thermally activated process limited by oxidation for higher temperatures. Thereby, the critical role of temperature as a key variable in metal-mediated exfoliations is highlighted.


Abstract

The need for high-quality large-scale monolayers of layered materials pushes the development of scalable gold-mediated exfoliations. Gold proves to be a suitable adhesive for exfoliation of several 2D materials. However, the extension to other noble metals remains underwhelming as gold outperforms all previously studied metals by a large margin. This is attributed to compromised stability against oxidation and surface contamination of less noble metals, leading to nonideal interfaces for exfoliation. The closest competitor to gold is silver, where gold still leads by a factor 100 regarding exfoliated layer size. In this work, a silver-mediated exfoliation process performing on par with gold is presented. The combination of freshly cleaved silver surfaces with a low-temperature annealing is found to be crucial. The exfoliation yield shows a dependence with annealing temperature, leading to loss in exfoliation performance for higher temperature. Raman studies indicate inhomogeneous strain for the MoS2/Ag interface at these temperatures, which hints at the competing factors of thermal activation versus oxidation of silver. Finally, a transfer process is implemented to promote silver to a fully functional exfoliation substrate. Ultimately, heating up exfoliations tips the strict balance between interfacial interactions and surface contaminations toward robust high monolayer yield exfoliation as demonstrated for silver.