Nature Communications, Published online: 01 June 2022; doi:10.1038/s41467-022-30519-w
Neuromorphic computing requires the realization of high-density and reliable random-access memories. Here, Thean et al. demonstrate wafer-scale integration of solution-processed 2D MoS2 memristor arrays which show long endurance, long memory retention, low device variations, and high on/off ratio.Jiuxiang Dai
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Wafer-scale solution-processed 2D material analog resistive memory array for memory-based computing
Evidence for moiré intralayer excitons in twisted WSe2/WSe2 homobilayer superlattices
Light: Science & Applications, Published online: 01 June 2022; doi:10.1038/s41377-022-00854-0
The moiré intralayer excitons in the twisted WSe2/WSe2 homobilayers superlattices were successfully observed and confirmed the existence of moiré intralayer excitons.Mid-infrared III–V semiconductor lasers epitaxially grown on Si substrates
Light: Science & Applications, Published online: 01 June 2022; doi:10.1038/s41377-022-00850-4
Mid-infrared III–V semiconductor lasers epitaxially grown on Si substratesEpitaxial single-crystal hexagonal boron nitride multilayers on Ni (111)
Nature, Published online: 01 June 2022; doi:10.1038/s41586-022-04745-7
Using a chemical vapour deposition method, it is possible to epitaxially grow wafer-scale single-crystal trilayers of hexagonal boron nitride—an important dielectric for 2D materials—on Ni (111) foils by boron dissolution.Multilayer 2D insulator shows promise for post-silicon electronics
Nature, Published online: 01 June 2022; doi:10.1038/d41586-022-01476-7
A method has been developed for fabricating thin films of the 2D insulator hexagonal boron nitride with a uniform crystal orientation. The advance makes this material a key contender for replacing silica substrates in future electronics.Graphene-driving novel strain relaxation towards AlN film and DUV photoelectronic devices
Light: Science & Applications, Published online: 30 May 2022; doi:10.1038/s41377-022-00861-1
Graphene-driving strain-pre-store engineering enables the epitaxy of strain-free AlN film with low dislocation density for high efficiency DUV-LEDs.Highly efficient green InP-based quantum dot light-emitting diodes regulated by inner alloyed shell component
Light: Science & Applications, Published online: 30 May 2022; doi:10.1038/s41377-022-00855-z
In this work, the pure green-emitting InP/ZnSexS1−x/ZnS quantum dots and their light-emitting diodes with high efficiency were successfully obtained by regulating the components of inner alloyed shell ZnSexS1−x layer.Epitaxial Growth of Lead‐Free 2D Cs3Cu2I5 Perovskites for High‐Performance UV Photodetectors
This article reports the epitaxial growth of lead-free 2D Cs3Cu2I5 perovskites, where the strong blue emission with a large Stocks shift and long (microsecond) lifetime is attributed to a radiative transition of self-trapped excitons. The Cs3Cu2I5 photodetector reveals a high responsivity of 3.78 A W–1 (270 nm, 5 V) with a fast characteristic (τrise/τdecay ≈ 163/203 ms), outperforming congeneric UV sensors.
Abstract
The all-inorganic lead-free Cu-based halide perovskites represented by the Cs−Cu−I system, have sparked extensive interest recently due to their impressive photophysical characteristics. However, successive works on their potential application in light emission diodes and photodetectors rely on tiny polycrystals, in which the grain boundaries and defects may lead to the performance degradation of their embodied devices. Here, 2D all-inorganic perovskite Cs3Cu2I5 single crystals are epitaxially grown on mica substrates, with a thickness down to 10 nm. The strong blue emission of the Cs3Cu2I5 flakes may originate from the radiative transition of self-trapped excitons associated with a large Stocks shift and long (microsecond) decay time. Ultravioelt (UV) photodetectors based on individual Cs3Cu2I5 nanosheets are fabricated via a swift and etching-free dry transfer approach, which reveal a high responsivity of 3.78 A W–1 (270 nm, 5 V bias), as well as a fast response speed (τrise ≈163 ms, τdecay ≈203 ms), outperforming congeneric UV sensors based on other 2D metal halide perovskites. This work therefore sheds light on the fabrication of green optoelectronic devices based on lead-free 2D perovskites, vital for the sustainable development of photoelectric technology.
Electrochemical Construction of Edge‐Contacted Metal‐Semiconductor Junctions with Low Contact Barrier
A facile approach is developed for constructing high-quality metal-2D semiconductor junctions through the edge-guided electrodeposition. Cross-sectional imaging and transport measurements confirm the seamless contact of Pd with each layer of MoS2 greatly reduces the contact barrier to ≈20 meV and contact resistance to ≈290 Ω µm and thus significantly increases the performance of FETs with Pd nanowire edge contacts.
Abstract
2D semiconductors, such as MoS2 have emerged as promising ultrathin channel materials for the further scaling of field-effect transistors (FETs). However, the contact barrier at the metal-2D semiconductor junctions still significantly limits the device's performance. By extending the application of electrochemical deposition in 2D electronics, a distinct approach is developed for constructing metal-2D semiconductor junctions in an edge-contacted configuration through the edge-guided electrodeposition of varied metals. Both high-resolution microscopic imaging and electrical transport measurements confirm the successful creation of high-quality Pd-2D MoS2 junctions in desired geometry by combining electrodeposition with lithographic patterning. FETs are fabricated on the obtained Pd-2D MoS2 junctions and it is confirmed that these junctions exhibit a reduced contact barrier of ≈20 meV and extremely low contact resistance of 290 Ω µm and thus increase the averaged mobility of MoS2 FETs to ≈108 cm2 V −1 s−1. This approach paves a new way for the construction of metal-semiconductor junctions and also demonstrates the great potential of the electrochemical deposition technique in 2D electronics.
Bi-state switch in moiré stacking
Nature Materials, Published online: 31 May 2022; doi:10.1038/s41563-022-01253-x
Twisted monolayer–multilayer graphene superlattices present bi-stable reconstruction states, with reversible switch in-between and long-distance propagation triggered by local mechanical perturbation. This provides additional degrees of freedom for moiré engineering.Raman Scattering Measurement of Suspended Graphene under Extreme Strain Induced by Nanoindentation
High strains are applied to single-layer graphene by an atomic force microscopy (AFM) tip and the Raman signals are obtained simultaneously using a Raman–AFM system. Graphene is stretched up to 6.1% and the G and 2D bands of Raman signal are shifted by 277 and 660 cm−1 respectively, which are unprecedented values.
Abstract
Graphene is known as a superstiff and extremely strong material. Hence, applying strains greater than 1% to graphene and simultaneously measuring changes in its physical properties has been challenging because of the limited methodologies for measuring both high strain and other physical properties. Here, Raman scattering measurement of suspended graphene under extremely high biaxial strain as large as 6.1% using an atomic force microscopy (AFM)–Raman spectroscopy measurement tool is reported. Nanoindentation is performed using AFM tips machined to have a flat top and a hole shape, resulting in a strained graphene area sufficiently large to enable the acquisition of a Raman signal. At the same time, the laser light is focused on the strained flat area of the graphene membrane. The Raman signals of the G and 2D bands of graphene are redshifted by 282 and 684 cm−1, respectively, which is unprecedented for graphene. This measurement technique provides an effective methodology to measure variations in the physical properties of atomically thin materials under superhigh strain.
[ASAP] Toward Room-Temperature Electrical Control of Magnetic Order in Multiferroic van der Waals Materials

Polystyrene Pocket Lithography: Sculpting Plastic with Light
A direct deep ultraviolet (DUV) photolithography method, which enables fabrication of microstructures in bulk polystyrene cell culture substrates, is presented. Pipelines for generating ink-based DUV masks and micropattern virtualization further increase the remarkable straightforwardness of the process. This, combined with the high applicability, can significantly improve accessibility of this class of microfabrication techniques to a broad biological research community.
Abstract
Tissue-culture-ware polystyrene is the gold standard for in vitro cell culture. While microengineering techniques can create advanced cell microenvironments in polystyrene, they require specialized equipment and reagents, which hinder their accessibility for most biological researchers. An economical and easily accessible method is developed and validated for fabricating microstructures directly in polystyrene with sizes approaching subcellular dimensions while requiring minimal processing time. The process involves deep ultraviolet irradiation through a shadow mask or ink pattern using inexpensive, handheld devices followed by selective chemical development with common reagents to generate micropatterns with depths/heights between 5 and 10 µm, which can be used to guide cell behavior. The remarkable straightforwardness of the process enables this class of microengineering techniques to be broadly accessible to diverse research communities.
Observation of an intermediate state during lithium intercalation of twisted bilayer MoS2
Nature Communications, Published online: 30 May 2022; doi:10.1038/s41467-022-30516-z
Li intercalation of MoS2 induces a transition from the insulating H-phase to the metallic T-phase, with a sharp boundary in between. Here the authors stabilize the intermediate phase in twisted bilayer MoS2, by leveraging the Moiré potential which facilitates fast Li diffusion and uniform intercalation.On-chip photonics and optoelectronics with a van der Waals material dielectric platform
DOI: 10.1039/D2NR01042A, Paper
Open Access
  This article is licensed under a Creative Commons Attribution 3.0 Unported Licence.
On-chip dielectric platform using van der Waals materials is experimentally demonstrated for light propagation, emission, and detection, indicating its great potential for faster, smaller, and more efficient photonic integrated circuits.
The content of this RSS Feed (c) The Royal Society of Chemistry
[ASAP] Control of Morphology and Substrate Etching in InAs/InP Droplet Epitaxy Quantum Dots for Single and Entangled Photon Emitters

Monolayer molybdenum disulfide switches for 6G communication systems
Nature Electronics, Published online: 30 May 2022; doi:10.1038/s41928-022-00766-2
Non-volatile analogue switches made from molybdenum disulfide can operate at frequencies of 480 GHz and achieve data transmission rates of 100 Gbit s–1, making them of potential use in sixth-generation communication technology.[ASAP] Mechanochemical Lithography

In situ growth of laser-induced graphene micro-patterns on arbitrary substrates
DOI: 10.1039/D2NR01948E, Communication
In this article we report a new laser processing method, combining the in situ graphitization of polyimide with simultaneous transfer of the graphene patterns to arbitrary substrates.
The content of this RSS Feed (c) The Royal Society of Chemistry
Electric‐Tunable Photoluminescence of 2D ErOCl for High‐Security Encryption of Programmable Information
This work reports the programmable information encryption by 2D van der Waals rare-earth material ErOCl based on the editable electric-tunable photoluminescence (PL). The correct information encoded in PL outputs can be tactfully decrypted from the PL intensity ratio of two thermal coupling transitions (2H11/2–4I15/2 and 4S3/2–4I15/2), which has been applied to ASCII codes and images encryption with high-security.
Abstract
High-security encryption has always been important in economic and military fields as well as in daily life. 2D van der Waals (vdW) rare-earth (RE) materials have advantages in photoluminescence (PL) modulation to achieve high-security encryption because of their multiple sharp emission peaks, which will facilitate the multimode regulation for high-security encryption of programmable information. Here, programmable information encryption has been achieved by applying 2D vdW ErOCl via the editable electric-tunable PL. The correct information encoded in PL outputs can be tactfully decrypted from the PL intensity ratio of 2H11/2–4I15/2 and 4S3/2–4I15/2 transitions. This strategy for ASCII codes and images encryption with high-security is demonstrated. This novel approach, PL modulation of 2D vdW RE material based on programmable electric inputs, will mark a new path to achieve high-security encryption.
BiOX/Bi/BiOX (X = Cl, Br) Double‐Side Nanosheet Arrays: Synthesis, Structures, and Photo(electro)catalytic Applications
BiOX/Bi/BiOX (X = Cl, Br) double-side nanosheet array catalyst, with vertically aligned BiOX nanosheets symmetrically grown on the two sides of horizontal Bi nanoplates, is constructed by a facile solvothermal route in the absence of any substrates. It shows enhanced photo(electro)catalytic performance in the selective oxidation of PhCH2OH to PhCHO and hydrogen and oxygen evolution.
Abstract
Array-structured photocatalysts, featuring unique transport properties of charge carriers and special texture structures, have captured widespread interest in photocatalytic and/or photoelectrocatalytic applications. However, the fabrication of arrays usually suffers from complicated synthetic routes and the indispensable use of substrates. Herein, a novel BiOX/Bi/BiOX (X = Cl, Br) double-side nanosheet array catalyst, with vertically aligned BiOX nanosheets symmetrically grown on the two sides of horizontal Bi nanoplates, is first constructed by a facile solution-phase solvothermal route in the absence of any substrates. Both l-cysteine and ethylene glycol are found to play critical roles in the formation of Bi nanoplates and the growth of BiOX nanosheets. Thanks to the synergism of double-side metal-semiconductor array, BiOX/Bi/BiOX presents significantly boosted performance for photocatalytic selective oxidation of benzyl alcohol to benzaldehyde, far surpassing Bi/BiOX and pristine BiOX. Additionally, BiOX/Bi/BiOX also exhibits superior photoelectrocatalytic performance with excellent hydrogen and oxygen evolution reaction activity. The electrochemical analysis and photoluminescence results reveal that the middle Bi nanoplate can function as a fast transport channel for photogenerated electrons, significantly accelerating the separation of photogenerated carriers. This work provides a general substrate-free strategy to construct array catalysts with double-side structure and reveals the outstanding advantages toward improved photocatalysis.
Optical Logic Operation Encryption on ZnTe Flake
An electrically and optically switchable logic operation encryption based on the photoluminescence (PL) ratio of ZnTe is developed. Two PL emissions can be selectively regulated by the electric and optical fields due to different responses of band-edge emission and defect emission. This work provides a design for the creation of logic operation encryption and holds great promise for high-security encryption.
Abstract
Logic operation encryption is emerging as a novel cryptographic mode, protecting logic operation from being attacked and tampered, and is a modern extension of conventional encryption system. However, the existing encryption methods are not conducive to the logic operation encryption due to the complexity, signal mode, and non-adjustability of their design. Herein, an advanced logic operation encryption method is designed via the photoluminescence ratio of ZnTe, and the electrically and optically switchable NAND (Not AND) and NOR (Not OR) encryption based on this method is implemented. Two photoluminescence emissions can be selectively regulated by the gate voltage and excitation laser based on the different responses of band-edge emission and defect emission. This novel approach will shed light on the development of high-security encryption and computer information protection.
Multidimensional surface patterning based on wavelength-controlled disulfide-diselenide dynamic photochemistry
Publication date: July–August 2022
Source: Materials Today, Volume 57
Author(s): Yanfang Niu, Xiao Yang, Jiajia Li, Yi Zeng, Keliang Liu, Wang Wan, Junlong Liao, Mengxiao Wei, Sen Li, Junning Zhang, Zhejun Chong, Xin Du, Zhongze Gu
The Lattice Distortion-Induced Ferromagnetism in the Chemical-Bonded MoSe2/WSe2 at Room Temperature
Two-dimensional materials stack up
Nature Electronics, Published online: 27 May 2022; doi:10.1038/s41928-022-00780-4
Two-dimensional materials stack upHeterostructures make light work of photodetection
Nature Electronics, Published online: 27 May 2022; doi:10.1038/s41928-022-00781-3
Heterostructures make light work of photodetectionContacts in 2D
Nature Electronics, Published online: 27 May 2022; doi:10.1038/s41928-022-00783-1
Methods to create van der Waals contacts between two-dimensional semiconductors and three-dimensional metals are helping to unleash the potential of two-dimensional devices.[ASAP] Unusual Magnetic Features in Two-Dimensional Fe5GeTe2 Induced by Structural Reconstructions

[ASAP] Nonvolatile Ferroelectric Memory with Lateral β/α/β In2Se3 Heterojunctions

[ASAP] Predicting Van der Waals Heterostructures by a Combined Machine Learning and Density Functional Theory Approach
