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11 Feb 02:54

An impermeable copper surface monolayer with high-temperature oxidation resistance

by Su Jae Kim

Nature Communications, Published online: 08 February 2025; doi:10.1038/s41467-025-56709-w

Here the authors identify silicon as an optimal element for anchoring oxygen on copper, nickel or iron surfaces to prevent oxidation. An atomically thin layer of SiMOx (M = Cu, Ni, or Fe) renders the metal surface impermeable to oxygen up to 400 °C while preserving the electrical properties.
11 Feb 02:53

Direct Syntheses of 2D Noble Transition Metal Dichalcogenides Toward Electronics, Optoelectronics, and Electrocatalysis‐Related Applications

by Jialong Wang, You Peng, Tong Zhou, Jiatian Fu, Wenzhi Quan, Yujin Cheng, Haoxuan Ding, Yanfeng Zhang
Direct Syntheses of 2D Noble Transition Metal Dichalcogenides Toward Electronics, Optoelectronics, and Electrocatalysis-Related Applications

This review summarizes the recent progress in the direct syntheses of 2D noble transition metal dichalcogenides (nTMDCs) domains, continuous films, and their heterostructures, mainly focusing on the thermally assisted conversion and chemical vapor deposition routes, as well as their applications in electronics, optoelectronics, catalysts, etc. A prospective outlook for the future development of 2D nTMDCs is also outlined.


Abstract

2D noble transition metal dichalcogenides (nTMDCs, PdX2 and PtX2, where X═S, Se, Te) have emerged as a new class of 2D materials, owing to their unique puckered pentagonal structure in 2D PdS2 and PdSe2, largely tunable band structures or band gaps with decreasing the layer thickness at the 2D limit, strong interlayer interactions, superior optoelectronic properties, high edge catalytic properties, etc. Directly synthesizing 2D nTMDCs domains or thin films with large-area uniformity, tunable thickness, and high crystalline quality is the premise for exploring these salient properties and developing a wide range of applications. Hereby, this review summarizes recent progress in the direct syntheses and characterizations of 2D nTMDCs, mainly focusing on the thermally assisted conversion (TAC) and chemical vapor deposition (CVD) methods, by using various metal and chalcogen-contained precursors. Meanwhile, the applications of directly synthesized 2D nTMDCs in various fields, such as high-performance field effect transistors (FETs), broadband photodetectors, superior catalysts in hydrogen evolution reactions, and ultra-sensitive piezo resistance sensors, are also discussed. Finally, challenges and prospects regarding the direct syntheses of high-quality 2D nTMDCs and their applications in next-generation electronic and optoelectronic devices, as well as novel catalysts beyond noble metals are overviewed.

11 Feb 02:52

Electrochemical Exfoliation of Layered Non‐van der Waals Crystals into 2D Nanosheets: MAX Phases and Beyond

by Lei Zheng, Heng Li, Evgeniya Kovalska, Jan Luxa, Ruizhi Yu, Huaijuan Zhou, Manfang Chen, Bing Wu, Zdenek Sofer
Electrochemical Exfoliation of Layered Non-van der Waals Crystals into 2D Nanosheets: MAX Phases and Beyond

This review offers the first comprehensive analysis of electrochemical exfoliation (ECE) for layered non-van der Waals (L-NvdW) materials, compares exfoliation methods with L-vdW materials, and introduces novel techniques for selective layer extraction in MAX phases, Zintl phases CaSi x Ge y , and metal oxides, highlighting both the potential and challenges of L-NvdW materials for future advancements.


Abstract

2D materials have rapidly gained attention due to their exceptional properties like high surface area, flexibility, and tunable electronic characteristics. These attributes make them highly versatile for applications in energy storage, electronics, and biomedicine. Inspired by graphene’s success, researchers are exploring other 2D materials from bulk crystals. Electrochemical exfoliation (ECE) is an efficient method for producing these materials, offering more sustainable mild conditions, quick processing, simple equipment, and high yields. While substantial progress has been made in the ECE of layered van der Waals (L-vdW) crystals, the exploration of layered non-van der Waals (L-NvdW) materials remains in its early stages. This review delves into using ECE to create 2D nanoplatelets from L-NvdW crystals. A comparative analysis of exfoliation techniques is provided for L-vdW and L-NvdW materials, followed by a comprehensive overview of recent advances in ECE methods applied to L-NvdW crystals. The discussion is organized around key categories, including the selective extraction of “M” and “A” layers respectively from MAX phases, decalcification of Zintl phases, and oxide delocalization from metal oxides. It is concluded by highlighting the potential applications of these 2D materials and discussing the challenges and future directions in this evolving field.

11 Feb 02:51

Rare‐Earth Oxychlorides as Promoters of Ruthenium Toward High‐Performance Hydrogen Evolution Electrocatalysts for Alkaline Electrolyzers

by Tongtong Liu, Yanan Chen, Xinyu Wang, Yajing Di, Klaus Müllen, Zhengping Zhang, Feng Wang
Rare-Earth Oxychlorides as Promoters of Ruthenium Toward High-Performance Hydrogen Evolution Electrocatalysts for Alkaline Electrolyzers

The lamellar rare-earth oxychlorides (REOCl) are innovatively used as promoters for ruthenium (Ru) as alkaline hydrogen evolution reaction electrocatalysts. The [RE2O2] and [Cl] layers act as the negative and positive charge transfer channels, respectively, which endows Ru surface with a high density of electrons, thus accelerating the hydroxyl peeling process.


Abstract

Developing efficient electrocatalysts for hydrogen evolution reaction (HER) in alkaline environments is vital for hydrogen production, owing to the extra water dissociation and hydroxyl desorption steps. Here, rare-earth oxychlorides (REOCl) are proposed as innovative promoters for ruthenium as HER electrocatalyst in alkali. The lamellar structure of REOCl with weakly bond [Cl] layers can facilitate the formation of an internal electric field that enhances interphase charge transfer. Taking ruthenium/ neodymium oxychloride (Ru/NdOCl) composites as a case study, sub ≈4 nm Ru nanoparticles are successfully embedded into NdOCl crystals through a rapid self-exothermic process, and the highly-coupled Ru−Cl/O−Nd interfaces are observed as metallic Ru particles with the edge of the NdOCl lamellar layers, where the [Nd2O2] and [Cl] layers act as the negative and positive charge transfer channels, respectively. The enhanced charge transfer between REOCl and Ru makes the highly-coupled Ru/REOCl catalysts show better electrocatalytic activity than both the benchmark Pt and Ru catalysts in alkaline electrolyte. This work will encourage more novel promoters for electrocatalysis and other emerging technologies.

11 Feb 02:50

The First Kleinman‐type Second‐Harmonic Generation Circular Dichroism On/Off Switchable Ferroelectrics

by Hang Peng, Yan Qin, Xiao‐Gang Chen, Xian‐Jiang Song, Ren‐Gen Xiong, Wei‐Qiang Liao
The First Kleinman-type Second-Harmonic Generation Circular Dichroism On/Off Switchable Ferroelectrics

The first crown ether-based chiral ferroelectrics show a ferroelectric phase transition at around 336 K from the chiral-polar point group 2 to chiral-nonpolar 422, which enables the notable switching of second-harmonic generation circular dichroism (SHG-CD) response from SHG-CD active (SHG-CD on) to inactive (SHG-CD off) states. Such an on/off switchable SHG-CD effect is unprecedented.


Abstract

Chiral ferroelectrics have recently received considerable interest due to their unique chiroptical properties. They can adopt Kleinman symmetry second-harmonic generation (SHG)-active chiral-polar point groups in the ferroelectric phase while Kleinman symmetry SHG-inactive chiral-nonpolar point groups in the paraelectric phase, providing a great opportunity to realize on/off switching of SHG circular dichroism (SHG-CD) response. However, the SHG-CD effect was rarely explored in chiral ferroelectrics, and the on/off switchable SHG-CD has never been reported. Herein, we report the first crown ether-based chiral ferroelectrics (R/S-CS)Ca(18-crown-6) (CS=camphor-10-sulfonic acid), which undergo a 422F2 type ferroelectric phase transition at around 336 K from Kleinman symmetry SHG-active point group 2 to Kleinman symmetry SHG-inactive point group 422. Notably, they exhibit obvious SHG-CD responses with an anisotropy factor of up to 0.31. More importantly, the SHG-CD response can be switched between SHG-CD active (SHG-CD on) and inactive (SHG-CD off) states during the ferroelectric phase transition, which is unprecedented. To the best of our knowledge, this is the first example of Kleinman-type SHG-CD on/off switchable ferroelectric. Our findings open up a new way to switch SHG-CD response based on chiral ferroelectrics, which would greatly inspire the further exploration of switchable SHG-CD effects in chiral ferroelectrics.

10 Feb 01:20

[ASAP] Electron Ptychography for Atom-by-Atom Quantification of 1D Defect Complexes in Monolayer MoS2

by Leyi Loh, Shoucong Ning, Daria Kieczka, Yuan Chen, Jianmin Yang, Zhe Wang, Stephen J. Pennycook, Goki Eda, Alexander L. Shluger, and Michel Bosman

TOC Graphic

ACS Nano
DOI: 10.1021/acsnano.4c14988
10 Feb 01:15

[ASAP] Wafer-Scale Transfer and Integration of Tungsten-Doped Vanadium Dioxide Films

by Yuan Li, He Ma, Run Shi, Yonghuang Wu, Shifeng Feng, Yulan Fu, Yuanqi Wei, Xuzhe Zhao, Kaichen Dong, Kaili Jiang, Kai Liu, and Xinping Zhang

TOC Graphic

ACS Nano
DOI: 10.1021/acsnano.4c15059
08 Feb 09:20

Without a grain of salt: micropatterning clean MXene thin-film electronics

Nanoscale Adv., 2025, 7,2329-2337
DOI: 10.1039/D4NA00983E, Paper
Open Access Open Access
Bar Favelukis, Barak Ratzker, Rebeca Miyar, Jürgen Jopp, Alexander Upcher, Pini Shekhter, Nitzan Maman, Maxim Sokol
Micropatterning of halide salt-free MXene films via spin coating, HCl spin-cleaning, and photolithography yields transparent thin films with high conductivity and photosensitivity, solving salt residue issues for integration into microelectronics.
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08 Feb 09:20

The quantum limits of contact resistance and ballistic transport in 2D transistors

by Deji Akinwande

Nature Electronics, Published online: 07 February 2025; doi:10.1038/s41928-024-01335-5

The development of transistors based on two-dimensional semiconductors requires a consistent approach to calculating and evaluating quantum contact resistances.
08 Feb 09:18

An impermeable copper surface monolayer with high-temperature oxidation resistance

by Su Jae Kim

Nature Communications, Published online: 08 February 2025; doi:10.1038/s41467-025-56709-w

Here the authors identify silicon as an optimal element for anchoring oxygen on copper, nickel or iron surfaces to prevent oxidation. An atomically thin layer of SiMOx (M = Cu, Ni, or Fe) renders the metal surface impermeable to oxygen up to 400 °C while preserving the electrical properties.
07 Feb 06:32

Enhanced Terahertz Spectroscopy of a Monolayer Transition Metal Dichalcogenide

by Xin Jin, Vincenzo Aglieri, Young‐Gyun Jeong, Atiye Pezeshki, Lilian Skokan, Mostafa Shagar, Yuechen Jia, Pablo Bianucci, Andreas Ruediger, Emanuele Orgiu, Andrea Toma, Luca Razzari
Enhanced Terahertz Spectroscopy of a Monolayer Transition Metal Dichalcogenide

An ad-hoc engineered metallic surface is employed to perform enhanced terahertz spectroscopy of a monolayer transition metal dichalcogenide (TMD). Thanks to a local absorption boost of 104, this technique allows for the extraction of the phonon resonance features and effective permittivity of the 2D material, paving the way for the rational design of phonon polariton devices exploiting monolayer TMDs.


Abstract

2D materials, including transition metal dichalcogenides, are attractive for a variety of applications in electronics as well as photonics and have recently been envisioned as an appealing platform for phonon polaritonics. However, their direct characterization in the terahertz spectral region, of interest for retrieving, e.g., their phonon response, represents a major challenge, due to the limited sensitivity of typical terahertz spectroscopic tools and the weak interaction of such long-wavelength radiation with sub-nanometer systems. In this work, by exploiting an ad-hoc engineered metallic surface enabling a ten-thousand-fold local absorption boost, enhanced terahertz spectroscopy of a monolayer transition metal dichalcogenide (tungsten diselenide) is performed and its dipole-active phonon resonance features are extracted. In addition, these data are used to obtain the monolayer effective permittivity around its phonon resonance. Via the direct terahertz characterization of the phonon response of such 2D systems, this method opens the path to the rational design of phonon polariton devices exploiting monolayer transition metal dichalcogenides.

07 Feb 06:25

[ASAP] Dual-Mode Luminescent Lanthanide-Modified Silicon Quantum Dots for Anticounterfeiting and Latent Fingerprint Visualization

by Lulu Liang, Shuting Guo, Qingzhong Guo, Zhanhui Zhang, Jiangyu Wu, Junfang Guo, and Faliang Luo

TOC Graphic

ACS Applied Nano Materials
DOI: 10.1021/acsanm.4c06554
07 Feb 06:25

[ASAP] Bi2O2Se Nanoplates for Lateral Memristor Devices

by Xi Wan, Xin Wang, Yingdi Yu, Tianao Liu, Mingkang Zhang, EnZi Chen, Kun Chen, Shuting Wang, Feng Shao, Xiaofeng Gu, and Jianbin Xu

TOC Graphic

ACS Applied Nano Materials
DOI: 10.1021/acsanm.4c06250
07 Feb 03:08

[ASAP] Low-Temperature Chemical Solution Deposition of Bi2O2Se on Amorphous Surface for Dynamic Memristor of Physical Reservoir Array

by Ayoung Ham, Wonbae Ahn, Jungyeop Oh, Gichang Noh, Saeyoung Oh, Minsoo Kang, Hyun-Jun Chai, Joon Young Kwak, Seunghwan Seo, Sung-Yool Choi, and Kibum Kang

TOC Graphic

ACS Nano
DOI: 10.1021/acsnano.4c13613
07 Feb 03:07

2D Molecular Crystals for Electronic and Optoelectronic Devices: Status and Challenges

by Yiran Ma, Meihui Wang, Tianyou Zhai
2D Molecular Crystals for Electronic and Optoelectronic Devices: Status and Challenges

This review provides an overview of the structures of 2D molecular crystals (2D MCs) and strategies to modify their morphology and properties. Next, it summarizes preparation methods for large-scale 2D MCs by solution-based processes or vapor deposition. Finally, it highlights the applications of 2D MCs in electronic and optoelectronic devices with the advantages of tunable properties and scalable preparation methods.


Abstract

2D molecular crystals (2D MCs) are an emerging family of 2D materials formed by organic or inorganic molecules held together entirely by weak intermolecular forces. 2D MCs are gaining attention in electronics and optoelectronics due to their structural diversity, scalability, and strong light–matter interactions. This review provides a comprehensive overview of 2D MCs and their potential in electronic and optoelectronic applications. It begins by highlighting the structural features and properties of key 2D MCs discovered to date, focusing on three strategies to manipulate intermolecular forces for better control over crystal morphology and properties. Then various methods are explored for fabricating large-area, highly-oriented 2D MCs, with an emphasis on vapor-phase and liquid-phase techniques. Last, their applications are reviewed in electronic and optoelectronic devices, such as channel materials, photosensitive components, and dielectrics. It is concluded by discussing future challenges and opportunities in the field, offering insights into scalable production and industrial applications of 2D MCs.

07 Feb 03:00

[ASAP] High-Dielectric 2D Bismuth Oxides with Large Bandgaps: The Role of 6s2 Lone Pair Hybridization

by Yang Hu, Lili Xu, Gaoyu Liu, Xiaojia Yuan, Wenhan Zhou, Xiangyu Guo, Yeliang Wang, Haibo Zeng, and Shengli Zhang

TOC Graphic

The Journal of Physical Chemistry Letters
DOI: 10.1021/acs.jpclett.4c03513
07 Feb 02:58

Dielectric Regulation in Quasi‐vdW Europium Oxysulfur Compounds by Compositional Engineering for 2D Electronics

by Chuanyong Jian, Jiashuai Yuan, Wenting Hong, Qiankun Ju, Qian Cai, Wei Liu
Dielectric Regulation in Quasi-vdW Europium Oxysulfur Compounds by Compositional Engineering for 2D Electronics

This study presents the first synthesis of 2D hexagonal Eu₂SO₂ and tetragonal Eu₂SO₆ with tunable dielectric properties. Eu₂SO₂ offers high dielectric performance, while Eu₂SO₆ provides a wider bandgap. Integrated into MoS₂ field-effect transistors, these materials demonstrate excellent performance, highlighting their potential as multifunctional dielectrics for next-generation low-power electronics.


Abstract

Advancing next-generation electronics necessitates precise control of dielectric properties in 2D materials. Here, the first synthesis of novel 2D quasi-van der Waals (vdW) europium oxysulfur (Eu2SOx) compounds, comprising hexagonal Eu₂SO₂ and tetragonal Eu₂SO₆ phases, with composition-tunable dielectric properties, is presented. Using a homodiffusive-controlled epitaxial growth method, materials are achieved with complementary characteristics: the hexagonal Eu₂SO₂ phase exhibits a high dielectric constant (≈30) paired with a moderate bandgap (≈4.56 eV), while the tetragonal Eu₂SO₆ phase offers a wider bandgap (≈5.62 eV) but a lower dielectric constant (≈20). The potential of these materials is demonstrated by integrating ultrathin Eu₂SO₂ nanoplates with molybdenum disulfide (MoS₂) field-effect transistors (FETs) via vdW forces. The resulting devices achieve a near-ideal I on/I off ratio (≈10⁸), minimal hysteresis (≈5.3 mV), a low subthreshold slope (≈63.5 mV dec⁻¹), and ultralow leakage current (≈10⁻¹⁴ A). These results highlight the capacity of europium oxysulfur compounds to address the trade-off between dielectric constant and bandgap, offering tailored solutions for diverse 2D electronic applications. This work underscores the potential of composition engineering to expand the family of rare-earth oxysulfur compounds for nanoelectronics, paving the way for innovative gate dielectrics in next-generation devices.

07 Feb 02:58

Twist angle dependent high degree of anisotropic emission and phonon scattering in WS2/NbOCl2 heterostructures

Nanoscale, 2025, 17,6079-6089
DOI: 10.1039/D4NR05496B, Paper
Mingyi Xu, Xinhui Yang, Xiao Guo, Jie Jiang, Shula Chen, Mengjian Zhu, Jiayu Dai, Fangyu Guo, Xiaoming Yuan
van der Waals (vdWs) heterostructures provide a superior platform to combine different low-dimensional materials together to tune their physical properties for different types of applications.
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07 Feb 02:56

Double-sided van der Waals epitaxy across an atomic layer

by Xiao Feng

Nature Materials, Published online: 03 February 2025; doi:10.1038/s41563-025-02131-y

Double-sided van der Waals epitaxy across an ultrathin membrane provides a new method for growing a vertical junction with an atomically sharp interface, enabling the direct detection of selection rules for resonant tunnelling between topological surface states.
07 Feb 02:56

Resolving polarization switching pathways of sliding ferroelectricity in trilayer 3R-MoS2

by Jing Liang

Nature Nanotechnology, Published online: 03 February 2025; doi:10.1038/s41565-025-01862-y

The work studies the switchable excitonic response in trilayer 3R-MoS2 and shows that the polarization switching pathway in multilayer sliding ferroelectrics results from interactions between domain walls, pinning centres and free-carrier screening.
07 Feb 02:53

Controllable Syntheses, Structure Identifications, and Property Explorations of Self‐Intercalated 2D Transition Metal Chalcogenides

by Yujin Cheng, Wenzhi Quan, Jialong Wang, You Peng, Tong Zhou, Haoxuan Ding, Yanfeng Zhang
Controllable Syntheses, Structure Identifications, and Property Explorations of Self-Intercalated 2D Transition Metal Chalcogenides

This review introduced the recent progress on the self-intercalated 2D transition metal chalcogenides with the focus on the group-V, VI, and VIII metals, including their controllable syntheses, atomic-scale characterizations, and property explorations. Challenges and prospects are also proposed for developing new self-intercalated 2D materials and their heterostructures, and exploring their unique properties and applications.


Abstract

2D transition metal dichalcogenides (2D TMDCs) have attracted intensive interest in physics and materials science-related fields, due to their exotic properties (e.g., superconductivity, charge density wave (CDW) phase transition, magnetism, electrocatalytic property). Intercalation of native metal atoms in the layered 2D TMDCs (e.g., from VS2 to V5S8 by V intercalation) can afford new stoichiometric ratios, phase states, and thus rich properties. This review hereby summarizes the recent progress in the controllable syntheses, structure characterizations, and property explorations of self-intercalated 2D transition metal chalcogenides (TMCs), with the metal elements focusing on group-V, VI, and VIII metals. The self-intercalation-related synthetic strategies will be introduced via chemical vapor deposition (CVD) and molecule beam epitaxy (MBE), especially by tuning the chemical potentials of intercalated metal elements, growth promoters, substrates, etc. Additionally, the structure/phase identifications of the self-intercalated 2D TMCs through various characterization techniques will be overviewed. More significantly, the intriguing properties in such 2D TMCs will be thoroughly discussed, such as the thickness- or composition-dependent magnetism, CDW phase transition, electrocatalytic property, etc. Finally, challenges and prospects are proposed for developing new self-intercalated 2D materials and their heterostructures and exploring their unique properties and applications.

07 Feb 02:52

[ASAP] Cu Intercalation-Stabilized 1T′ MoS2 with Electrical Insulating Behavior

by Huiyu Nong, Junyang Tan, Yujie Sun, Rongjie Zhang, Yue Gu, Qiang Wei, Jingwei Wang, Yunhao Zhang, Qinke Wu, Xiaolong Zou, and Bilu Liu

TOC Graphic

Journal of the American Chemical Society
DOI: 10.1021/jacs.4c14945
07 Feb 02:51

[ASAP] In Situ TEM Characterization of Battery Materials

by Diyi Cheng, Jinseok Hong, Daewon Lee, Seung-Yong Lee, and Haimei Zheng

TOC Graphic

Chemical Reviews
DOI: 10.1021/acs.chemrev.4c00507
07 Feb 02:47

[ASAP] Spatially Controlled Growth of Ultrathin MoO2 Polymorphs by Physical Vapor Deposition

by Jacob Elkins, Sathvik Ajay Iyengar, Ojasvi Verma, Himanshu Shekhar, Kendra Khodabandehloo, Jingyi Zhou, Tymofii Pieshkov, Jishnu Murukeshan, Peter Nordlander, Aravind Krishnamoorthy, Stephan Link, Robert Vajtai, Anand Puthirath, and Pulickel M. Ajayan

TOC Graphic

Nano Letters
DOI: 10.1021/acs.nanolett.4c05582
07 Feb 02:41

Wafer‐Scale Synthesis of Topological Insulator Sb2Te3 Thin Films

by Ali Shafiei, Ahmad Fathi Hafshejani, Rehab M. G. Ahmed, Alessio Lamperti, Emanuele Longo, Lorenzo Locatelli, Christian Martella, Alessandro Molle, Graziella Tallarida, Carlo Zucchetti, Claudia Wiemer, Massimo Longo, Roberto Mantovan
Wafer-Scale Synthesis of Topological Insulator Sb2Te3 Thin Films

This work demonstrates how the topologically protected conduction in Sb2Te3 thin films can be extended from few-mm2 samples’ area up to larger areas of several cm2 Si(111) wafers. The reported findings represent a breakthrough for the future technology scale-up of topological insulators for applications such as spintronics, thermoelectrics, and quantum computing.


Abstract

Recently, metal-organic chemical vapor deposition (MOCVD) has been proven successful to grow topological insulators such as antimony telluride (Sb2Te3), with their use as efficient spin-charge converters at room temperature also being reported. On the other hand, a wafer-scale synthesis of Sb2Te3 thin films showing clear-cut electrical conduction driven by topologically protected surface states is still missing. Within this work, the growth of Sb2Te3 thin films with variable thicknesses over 4-inch (4″) wafer-scale Si(111) substrates as conducted via MOCVD is reported. By performing magnetoconductance measurements, weak antilocalization phenomena are detected over the whole 4″ area, thus proving the possibility to produce wafer-scale Sb2Te3 topological insulator thin films. Furthermore, comprehensive information on the variability of the functional properties of Sb2Te3 thin films with their morphological, chemical, and structural properties, as probed by scanning electron microscopy, X-ray diffraction/reflectivity, atomic force microscopy, Raman spectroscopy, time-of-flight secondary ion mass spectrometry, and energy-dispersive X-ray analyses is reported. This work provides a breakthrough for the technology scale-up of these novel materials to be employed in future spintronic devices as well as applications in nanoelectronics, thermoelectrics, and quantum computing.

07 Feb 02:40

High‐Performance Infrared Self‐Powered Photodetector Based on 2D Van der Waals Heterostructures

by Weijing Liu, Yifan Wu, Xiaozhendong Bao, Lin Sun, Yuee Xie, Yuanping Chen
High-Performance Infrared Self-Powered Photodetector Based on 2D Van der Waals Heterostructures

Recent high-performance self-powered photodetectors for infrared bands are mostly made of 2D/3D heterostructures. Here, a 2D/2D van der Waals heterostructure PdSe2/MoTe2 is proposed to be a outstanding infrared self-powered detector. It exhibits a self-powered broadband detection from ultraviolet to mid-infrared. Moreover, it possesses a good environmental stability and an infrared imaging capability.


Abstract

Self-powered photodetection is an effective way to resolve the issue of high dark current in infrared photodetectors under a bias voltage. To date, high-performance infrared self-powered photodetectors (ISPDs) are mostly based on heterostructures consisting of 2D and 3D materials, while those based on 2D/2D heterostructures are rare. This will hinder the development of infrared devices toward miniaturization and energy-saving. By exploring some 2D/2D van der Waals (vdWs) heterostructures, constructed by typical 2D transition metal dichalcogenides (TMDs), it is found that the heterostructure PdSe2/MoTe2 is a high-performance ISPD. It exhibits a good capability of self-powered broadband detection from 300 to 1550 nm, even extending to 4050 nm. Especially, under near-infrared illumination of 980 nm, its responsivity and detectivity can approach 395 mA W−1 and 1.92 × 1011 Jones, respectively, which can be comparable with the high-performance 2D/3D ISPDs. The heterostructure also possesses good environmental stability and infrared imaging capability. In addition, Three necessary conditions are proposed to construct 2D/2D high-performance ISPD, i.e., a large difference of work function, high infrared absorption, and a type-II band alignment. This work will guide a way to search for excellent ISPDs.

07 Feb 02:39

[ASAP] Strain- and Ar/H2 Annealing-Induced Sulfur Defects in Monolayer MoS2 Probed by Raman Spectroscopy

by Yuxiang Chen, Zhengyue Li, Yinfei Xie, Bo Zou, Yongze Xu, Yu Zhou, Jinfeng Yang, and Huarui Sun

TOC Graphic

The Journal of Physical Chemistry C
DOI: 10.1021/acs.jpcc.5c00296
07 Feb 02:31

[ASAP] Improvement of P-Type Contact in WSe2 Field-Effect Transistors via Defect Engineering

by Heng Zhang, Jialei Miao, Cheng Zhang, Xinlong Zeng, Tianjiao Zhang, Tingting Chen, Junjie Wu, Kaige Gao, Wei Xu, Xiaowei Zhang, and Yuda Zhao

TOC Graphic

Nano Letters
DOI: 10.1021/acs.nanolett.4c05970
07 Feb 02:31

Ultrafast and Universal Synthetic Route for Nanostructured Transition Metal Oxides Directly Grown on Substrates

by Si Heon Lim, Geunwoo Kim, Sungjin Cho, Yeong Kwon Kim, Eun Bee Ko, Seon Yeon Choi, Jung A Heo, Daegun Kim, Hocheon Yoo, So‐Yeon Lee, YongJoo Kim, Pil‐Ryung Cha, Dong Yun Lee, Sunghun Lee, Byung Chul Jang, Yeonhoo Kim, Hyun Ho Kim
Ultrafast and Universal Synthetic Route for Nanostructured Transition Metal Oxides Directly Grown on Substrates

A universal method for synthesizing nanostructured transition metal oxides (NTMOs) through induced solidification of microdroplets enables rapid production in air within a minute. This method allows precise control of alignment for various applications, including gas sensors and PUFs, and supports doping, reduction, and chalcogenization while preserving morphology.


Abstract

Nanostructured transition metal oxides (NTMOs) have consistently piqued scientific interest for several decades due to their remarkable versatility across various fields. More recently, they have gained significant attention as materials employed for energy storage/harvesting devices as well as electronic devices. However, mass production of high-quality NTMOs in a well-controlled manner still remains challenging. Here, a universal, ultrafast, and solvent-free method is presented for producing highly crystalline NTMOs directly onto target substrates. The findings reveal that the growth mechanism involves the solidification of condensed liquid-phase TMO microdroplets onto the substrate under an oxygen-rich ambient condition. This enables a continuous process under ambient air conditions, allowing for processing within just a few tens of seconds per sample. Finally, it is confirmed that the method can be extended to the synthesis of various NTMOs and their related compounds.

07 Feb 02:18

Comprehensive two-dimensional gas chromatography–mass spectrometry

by Luigi Mondello

Nature Reviews Methods Primers, Published online: 06 February 2025; doi:10.1038/s43586-024-00379-3

Using two gas chromatography columns and a mass spectrometer, comprehensive two-dimensional gas chromatography–mass spectrometry (GC×GC–MS) is a powerful tool for separating and analysing gas-phase compounds. This Primer provides an overview of GC×GC–MS, including experimental set-up, analysis and applications in food science, environmental studies, petrochemicals and various -omics fields.