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19 Feb 07:31

Sr4Al2O7: A New Sacrificial Layer with High Water Dissolution Rate for the Synthesis of Freestanding Oxide Membranes

by Leyan Nian, Haoying Sun, Zhichao Wang, Duo Xu, Bo Hao, Shengjun Yan, Yueying Li, Jian Zhou, Yu Deng, Yufeng Hao, Yuefeng Nie
Sr4Al2O7: A New Sacrificial Layer with High Water Dissolution Rate for the Synthesis of Freestanding Oxide Membranes

A new sacrificial layer, Sr4Al2O7, is proposed to fabricate freestanding oxide membranes with high water dissolution rate, which is ≈10 times higher than that of Sr3Al2O6. The high-dissolution-rate of Sr4Al2O7 is most likely attributed to the more discrete Al-O networks and higher concentration of water-soluble Sr-O species in its crystal structure.


Abstract

Freestanding perovskite oxide membranes have drawn great attention recently since they offer exceptional structural tunability and stacking ability, providing new opportunities in fundamental research and potential device applications in silicon-based semiconductor technology. Among different types of sacrificial layers, the (Ca, Sr, Ba)3Al2O6 compounds are most widely used since they can be dissolved in water and prepare high-quality perovskite oxide membranes with clean and sharp surfaces and interfaces; However, the typical transfer process takes a long time (up to hours) in obtaining millimeter-size freestanding membranes, let alone realize wafer-scale samples with high yield. Here, a new member of the SrO-Al2O3 family, Sr4Al2O7 is introduced, and its high dissolution rate, ≈10 times higher than that of Sr3Al2O6 is demonstrated. The high-dissolution-rate of Sr4Al2O7 is most likely related to the more discrete Al-O networks and higher concentration of water-soluble Sr-O species in this compound. This work significantly facilitates the preparation of freestanding membranes and sheds light on the integration of multifunctional perovskite oxides in practical electronic devices.

23 Jan 02:03

Materials Design Innovations in Optimizing Cellular Behavior on Melt Electrowritten (MEW) Scaffolds

by Brenna L. Devlin, Mark C. Allenby, Jiongyu Ren, Edmund Pickering, Travis J. Klein, Naomi C. Paxton, Maria A. Woodruff
Materials Design Innovations in Optimizing Cellular Behavior on Melt Electrowritten (MEW) Scaffolds

Melt electrowriting (MEW) has revolutionized biomaterial scaffold fabrication and collaboration across materials science, computational biology, and bioprinting has furthered the understanding of complex biological systems. This review provides a broad overview of multidisciplinary strategies to optimize cellular responses to MEW scaffolds, with an emphasis on material, architecture, and modeling. These innovations show promise in progressing tissue modeling, regeneration, drug screening, and personalized cell therapies.


Abstract

The field of melt electrowriting (MEW) has seen significant progress, bringing innovative advancements to the fabrication of biomaterial scaffolds, and creating new possibilities for applications in tissue engineering and beyond. Multidisciplinary collaboration across materials science, computational modeling, AI, bioprinting, microfluidics, and dynamic culture systems offers promising new opportunities to gain deeper insights into complex biological systems. As the focus shifts towards personalized medicine and reduced reliance on animal models, the multidisciplinary approach becomes indispensable. This review provides a concise overview of current strategies and innovations in controlling and optimizing cellular responses to MEW scaffolds, highlighting the potential of scaffold material, MEW architecture, and computational modeling tools to accelerate the development of efficient biomimetic systems. Innovations in material science and the incorporation of biologics into MEW scaffolds have shown great potential in adding biomimetic complexity to engineered biological systems. These techniques pave the way for exciting possibilities for tissue modeling and regeneration, personalized drug screening, and cell therapies.

23 Jan 02:03

In Situ Phase Transformation to form MoO3−MoS2 Heterostructure with Enhanced Printable Sodium Ion Storage

by Lianghao Yu, Xin Tao, Dengning Sun, Linlin Zhang, Chaohui Wei, Lu Han, Zhongti Sun, Qing Zhao, Huile Jin, Guang Zhu
In Situ Phase Transformation to form MoO3−MoS2 Heterostructure with Enhanced Printable Sodium Ion Storage

This study employs theoretical calculations and in situ XRD technique to investigate the synergistic intercalation-conversion storage behavior of MoO3 and MoS2. This research not only provides theoretical guidance for the utilization of heterostructure materials in SIBs, but also emphasizes the potential of utilizing 3D printing for electrode fabrication. This advancement in electrode fabrication introduces new possibilities for the realization of fully printable batteries.


Abstract

Molybdenum trioxide (MoO3) possesses high energy density but often suffers from poor electrical conductivity and limited cycling stability when used as a sodium-ion battery (SIB) anode. To address these issues, the construction of (Molybdenum trioxide-Molybdenum disulfide)MoO3-MoS2 heterostructures has proven effective in enhancing electronic conductivity, ion diffusion properties, and structural stability. Guided by the density functional theory (DFT) calculations, which predict favorable Na+ diffusion and adsorption properties, nanorod-like MoO3-MoS2 heterostructures are synthesized using a two-step method. Benefiting from the synergistic effects of the heterostructure and nanosized morphology, the resulting MoO3-MoS2 electrode exhibits outstanding rate performance (316 mA h g−1 at 10 A g−1) and long-lasting cycling stability (286 mA h g−1 after 2300 cycles at 5 A g−1) as an SIB anode. In situ XRD measurements reveal that the ultrahigh specific capacity of MoO3-MoS2 is attributed to the synergistic intercalation-conversion storage of MoO3 and MoS2. In the pursuit of meeting commercialization requirements, electrodes with adjustable mass loading are also prepared using 3D printing, showcasing the high areal capacity characteristics of the SIBs. This study not only provides theoretical insights into expanding the use of heterojunction materials as SIB anodes but also demonstrates the significant potential for creating high-energy-density and cost-effective SIBs.

22 Jan 02:29

[ASAP] Chemical Vapor Deposition of a Single-Crystalline MoS2 Monolayer through Anisotropic 2D Crystal Growth on Stepped Sapphire Surface

by Iryna Kandybka, Benjamin Groven, Henry Medina Silva, Stefanie Sergeant, Ankit Nalin Mehta, Serkan Koylan, Yuanyuan Shi, Sreetama Banerjee, Pierre Morin, and Annelies Delabie

TOC Graphic

ACS Nano
DOI: 10.1021/acsnano.3c09364
22 Jan 02:29

[ASAP] Aptamer Renaissance for Neurochemical Biosensing

by Annina Stuber and Nako Nakatsuka

TOC Graphic

ACS Nano
DOI: 10.1021/acsnano.3c09576
22 Jan 02:28

[ASAP] Tough, Antifreezing, and Piezoelectric Organohydrogel as a Flexible Wearable Sensor for Human–Machine Interaction

by Yongdong Shi, Youjun Guan, Mingjie Liu, Xinchang Kang, Yu Tian, Weicheng Deng, Peng Yu, Chengyun Ning, Lei Zhou, Rumin Fu, and Guoxin Tan

TOC Graphic

ACS Nano
DOI: 10.1021/acsnano.3c11578
22 Jan 02:28

[ASAP] Flexible Metasurfaces for Multifunctional Interfaces

by Yunlei Zhou, Shaolei Wang, Junyi Yin, Jianjun Wang, Farid Manshaii, Xiao Xiao, Tianqi Zhang, Hong Bao, Shan Jiang, and Jun Chen

TOC Graphic

ACS Nano
DOI: 10.1021/acsnano.3c09310
22 Jan 02:27

Interlayer Coupling in Anisotropic/Isotropic Van der Waals Heterostructures of ReS2 and WS2

by Bingying You, Zheyuan Xu, Junqiang Yang, Xingxing Jiang, Yanfang Li, Gonglei Shao, Yuanyuan Jin, Haiyan Xiang, Huili Jiang, Xiaochi Liu, Jian Sun, Yexing Feng, Ying Jiang, Anlian Pan, Song Liu
Interlayer Coupling in Anisotropic/Isotropic Van der Waals Heterostructures of ReS2 and WS2

The WS2-ReS2 van der Waals heterostructure is formed by the manually vertical stack. Anisotropic and isotropic materials are introduced in the heterojunction system to manipulate in-plane symmetry, offering a new way to control their properties. The study confirms the formation of effective heterojunctions and shows how the anisotropy and asymmetry of these heterostructures can be adjusted, leading to potential applications in electronics and photonics.


Abstract

Van der Waals (vdW) heterostructures are composed of atomically thin layers assembled through weak (vdW) force, which have opened a new era for integrating materials with distinct properties and specific applications. However, few studies have focused on whether and how anisotropic materials affect heterostructure system. The study introduces anisotropic and isotropic materials in a heterojunction system to change the in-plane symmetry, offering a new degree of freedom for modulating its properties. The sample is fabricated by manually stacking ReS2 and WS2 flakes prepared by mechanical exfoliation. Raman spectra and photoluminescence measurements confirm the formation of an effective heterojunction, indicating interlayer coupling of the system. The anisotropy and asymmetry of the WS2-ReS2 heterostructure system can be adjusted by the introduction of isotropic WS2 and anisotropic ReS2, which can be proved by the change of the polarized Raman pattern. In the transient absorption measurement, the transient absorption spectra of WS2-ReS2 heterostructure are red-shifted compared to those of WS2 monolayer, and the charge transfer is observed in the heterostructure. These results show the potential of anisotropic 2D materials in anisotropy modulation of heterostructures, which may promote future electronic or photonic application.

22 Jan 02:25

Field-free switching of perpendicular magnetization by two-dimensional PtTe2/WTe2 van der Waals heterostructures with high spin Hall conductivity

by Fei Wang

Nature Materials, Published online: 19 January 2024; doi:10.1038/s41563-023-01774-z

The authors demonstrate field-free magnetization switching in van der Waals heterostructures.
22 Jan 02:23

Origami fabric robot slithers like a snake

Nature, Published online: 18 January 2024; doi:10.1038/d41586-024-00126-4

The folded robot can squeeze through tight spaces with linear motion.
22 Jan 02:22

Performance Enhancement of the Li6PS5Cl‐Based Solid‐State Batteries by Scavenging Lithium Dendrites with LaCl3‐Based Electrolyte

by Shijie Xu, Xiaobin Cheng, Shunjin Yang, Yichen Yin, Xinyu Wang, Yuzhe Zhang, Dehang Ren, Yujiang Sun, Xiao Sun, Hongbin Yao, Yongan Yang
Performance Enhancement of the Li6PS5Cl-Based Solid-State Batteries by Scavenging Lithium Dendrites with LaCl3-Based Electrolyte

To enhance the ability of Li6PS5Cl against Li dendrites for developing high-performance all-solid-state lithium batteries, inserting a thin layer of LaCl3-based electrolyte inside Li6PS5Cl produces a sandwich-structured composite electrolyte, which presents greatly-improved critical current density, cycling lifetime and rate capability. The enhancing mechanism is assigned to the Li-scavenging capability of the LaCl3-based electrolyte.


Abstract

Li6PS5Cl (LPSC) is a very attractive sulfide solid electrolyte for developing high-performance all-solid-state lithium batteries. However, it cannot suppress the growth of lithium dendrites and then can only tolerate a small critical current density (CCD) before getting short-circuited to death. Learning from that a newly-developed LaCl3-based electrolyte (LTLC) can afford a very large CCD, a three-layer sandwich-structured electrolyte is designed by inserting LTLC inside LPSC. Remarkably, compared with bland LPSC, this hybrid electrolyte LPSC/LTLC/LPSC presents extraordinary performance improvements: the CCD gets increased from 0.51 to 1.52 mA cm−2, the lifetime gets prolonged from 7 h to >500 h at the cycling current of 0.5 mA cm−2 in symmetric cells, and the cyclability gets extended from 10 cycles to >200 cycles at the cycling rate of 0.5 C and 30 °C in Li|electrolyte|NCM721 full cells. The enhancing reasons are assigned to the capability of LTLC to scavenge lithium dendrites, forming a passive layer of Ta, La, and LiCl.

22 Jan 02:21

Next‐Generation Photodetectors beyond Van Der Waals Junctions (Adv. Mater. 3/2024)

by Fang Wang, Tao Zhang, Runzhang Xie, Anna Liu, Fuxing Dai, Yue Chen, Tengfei Xu, Hailu Wang, Zhen Wang, Lei Liao, Jianlu Wang, Peng Zhou, Weida Hu
Next-Generation Photodetectors beyond Van Der Waals Junctions (Adv. Mater. 3/2024)

Next-Generation Photodetectors

The van der Waals junction, which is newly flourishing, shows extraordinary performance and versatile manipulation routes. In article number 2301197, Weida Hu and co-workers systematically review most manipulation mechanisms for van der Waals junctions, which could potentially catch the opportunities in next-generation photodetectors toward ultrasensitivity, multidimensions, large-area arrays, and more intelligent integration.


22 Jan 02:18

Atomic‐Scale Visualization of Multiferroicity in Monolayer NiI2

by Mohammad Amini, Adolfo O. Fumega, Héctor González‐Herrero, Viliam Vaňo, Shawulienu Kezilebieke, Jose L. Lado, Peter Liljeroth
Atomic-Scale Visualization of Multiferroicity in Monolayer NiI2

Scanning tunneling microscopy (STM) supported by density functional theory (DFT) calculations are used to probe and characterize the multiferroic order in monolayer NiI2. Its type-II multiferroic order arises from the combination of a magnetic spin spiral order and a strong spin-orbit coupling. These results on magnetoelectric effects at the atomic scale suggest new ways to engineer multiferroic orders in van der Waals materials and their heterostructures.


Abstract

Progress in layered van der Waals materials has resulted in the discovery of ferromagnetic and ferroelectric materials down to the monolayer limit. Recently, evidence of the first purely 2D multiferroic material was reported in monolayer NiI2. However, probing multiferroicity with scattering-based and optical bulk techniques is challenging on 2D materials, and experiments on the atomic scale are needed to fully characterize the multiferroic order at the monolayer limit. Here, scanning tunneling microscopy (STM) supported by density functional theory (DFT) calculations is used to probe and characterize the multiferroic order in monolayer NiI2. It is demonstrated that the type-II multiferroic order displayed by NiI2, arising from the combination of a magnetic spin spiral order and a strong spin-orbit coupling, allows probing the multiferroic order in the STM experiments. Moreover, the magnetoelectric coupling of NiI2 is directly probed by external electric field manipulation of the multiferroic domains. The findings establish a novel point of view to analyze magnetoelectric effects at the microscopic level, paving the way toward engineering new multiferroic orders in van der Waals materials and their heterostructures.

22 Jan 02:17

Logic Gate Circuits Based on CeOx/WOy Memristor for the Odd/Even Checker and Encryption/Decryption of Image Applications

by Jiangqiu Wang, Hongyan Wang, Zelin Cao, Shouhui Zhu, Junmei Du, Chuan Yang, Chuan Ke, Yong Zhao, Bai Sun
Logic Gate Circuits Based on CeOx/WOy Memristor for the Odd/Even Checker and Encryption/Decryption of Image Applications

In this work, the four basic digital logic circuits are constructed for a half adder and a full adder that can be used for digital arithmetic operations. Besides, an odd/even checker is developed to verify the correctness of data transmission. Finally, a cryptographic array is designed and implemented to encrypt and decrypt a series of numbers and images.


Abstract

Due to its powerful brain-like parallel computing and efficient data processing capabilities, memristors are considered to be the core components for building the next generation of artificial intelligence systems. In this study, the CeOx/WOy heterojunction is employed as the functional layer, and various metal materials are utilized as the top electrode to fabricate the memristor. The results indicate that the memristive performance of the Ag/CeOx/WOy/ITO device can be improved by using Ag as the top electrode. By studying the conductivity mechanism of the device, a conductivity model is established that regulates oxygen vacancies and Ag conductive filaments. Furthermore, using the as-prepared memristor, it is constructed four basic digital logic circuits: OR, AND, XOR, and XNOR, as well as a half adder and a full adder that can be used for digital arithmetic operations. Specifically, an odd/even checker is developed based on XOR and XNOR logic circuits to verify the correctness of data transmission. Finally, it is also designed and implemented a cryptographic array based on a memristor, which can be applied to encrypt and decrypt a series of numbers and images. Therefore, this work extends the application of memristor toward digital circuits, information transmission, data processing and image security encryption.

22 Jan 02:03

Realizing Super‐High Piezoelectricity and Excellent Fatigue Resistance in Domain‐Engineered Bismuth Titanate Ferroelectrics

by Shaoxiong Xie, Qian Xu, Qiang Chen, Jianguo Zhu, Qingyuan Wang
Realizing Super-High Piezoelectricity and Excellent Fatigue Resistance in Domain-Engineered Bismuth Titanate Ferroelectrics

A novel domain-engineered BIT ceramic system exhibits super-high piezoelectric performance (d 33 = 38.5 pC N−1, d 33 * = 46.7 pm V−1) and excellent fatigue resistance (stable up to 107 cycles). It reveals that the introduction of high-density layered (001)-type 180° domain walls with flexible polarization rotation features and the formation of small-size multi-domain states with low energy barriers are mainly responsible for the excellent electrical performance.


Abstract

Bismuth titanate (BIT) is widely known as one of the most prospective lead-free ferroelectric and piezoelectric materials in advanced high-temperature sensing applications. Despite significant advances in developing BIT ferroelectrics, it still faces major scientific and engineering challenges in realizing super-high performance to meet next-generation high-sensitivity and light-weight applications. Here, a novel ferroelectric domain-engineered BIT ceramic system is conceived that exhibits super-high piezoelectric coefficient (d 33 = 38.5 pC N−1) and inverse piezoelectric coefficient (d 33 * = 46.7 pm V−1) at low electric field as well as excellent fatigue resistance (stable up to 107 cycles). The results reveal that the introduction of high-density layered (001)-type 180° domain walls with flexible polarization rotation features and the formation of small-size multi-domain states with low energy barriers are mainly responsible for the excellent electrical performance. To the best of knowledge, it is the first time to reveal such intriguing domain structures in BIT ceramics in detail, especially from the atomic-scale perspective by using atomic number (Z)-contrast imaging in combination with atomic-resolution polarization mapping. It is believed that this breakthrough conduces to comprehensively understand structural features of ferroelectric domains in BIT ceramics, and also opens a window for future developments of super-high performance in bismuth layer-structured ferroelectrics via domain engineering.

22 Jan 02:03

DNA‐Mediated, On‐Membrane Sequential Assembly of Conjugated Polymer Nanoparticles for Sensitive Detection of Cell Surface Markers

by Yuki Maeda, Noriko Nakamura, Seiichi Ohta
DNA-Mediated, On-Membrane Sequential Assembly of Conjugated Polymer Nanoparticles for Sensitive Detection of Cell Surface Markers

Fluorescent amplification via sequential assembly of conjugated polymer nanoparticles (Pdots) on the cell membrane is reported for surface marker detection. Surface markers are first bound to single-stranded DNA (ssDNA)-conjugated antibodies, followed by sequential assembly of ssDNA-modified Pdots using DNA hybridization. This approach provides new insights into the sensitive detection of surface markers by flow cytometry for disease diagnostics.


Abstract

Flow cytometry can provide detailed information about protein expression on cell surface and is, therefore, widely used in clinical testing. However, owing to the limited sensitivity of fluorescence signals, detection of low-expression cell surface markers is challenging. The present report describes a DNA-mediated, on-membrane assembly of conjugated polymer nanoparticles (Pdots) that amplifies fluorescence signal from surface markers for sensitive detection via flow cytometry. Single-stranded DNA (ssDNA)-conjugated antibodies are first bound to cell surface markers, from which ssDNA-modified Pdots are sequentially assembled using DNA hybridization. The use of DNA as a linker enables the distance-controlled assembly of Pdots to prevent fluorescence quenching, whereas their on-membrane sequential assembly allows amplification of the fluorescence signal without reducing binding ability of antibodies. Thus, two rounds of Pdot assembly achieve 31-fold amplification of the fluorescence signal from CD19 on Nalm-6 cells, which is 125-fold brighter than that obtained using the conventional fluorescent dye-based method. Moreover, the sequential assembly of 22 nm Pdots shows 24-fold higher fluorescence than one-step labeling with 81 nm Pdots, suggesting the advantage of the sequential assembly strategy in avoiding steric hindrance. The proposed method is expected to contribute to the sensitive detection of low-expression surface markers for early and accurate diagnosis.

18 Jan 01:34

[ASAP] Nonvolatile Isomorphic Valence Transition in SmTe Films

by Shogo Hatayama, Shunsuke Mori, Yuta Saito, Paul J. Fons, Yi Shuang, and Yuji Sutou

TOC Graphic

ACS Nano
DOI: 10.1021/acsnano.3c07960
18 Jan 01:34

[ASAP] Two-Dimensional Biodegradable Black Phosphorus Nanosheets Promote Large Full-Thickness Wound Healing through In Situ Regeneration Therapy

by Xueshan Bai, Renxian Wang, Xiaohua Hu, Qiang Dai, Jianxun Guo, Tongyu Cao, Weili Du, Yuning Cheng, Songxia Xia, Dingding Wang, Liya Yang, Li Teng, Dafu Chen, and Yajun Liu

TOC Graphic

ACS Nano
DOI: 10.1021/acsnano.3c11177
18 Jan 01:32

Flexible, scalable, high channel count stereo-electrode for recording in the human brain

by Keundong Lee

Nature Communications, Published online: 17 January 2024; doi:10.1038/s41467-023-43727-9

Electrodes available for deep brain recording and stimulation have a number of limitations. Here the authors describe a thin-film depth electrode that may offer improved spatial and temporal resolution for recording brain activity.
18 Jan 01:32

Broadband miniaturized spectrometers with a van der Waals tunnel diode

by Md Gius Uddin

Nature Communications, Published online: 17 January 2024; doi:10.1038/s41467-024-44702-8

Here, the authors report a high-performance broadband spectrometer based on a van der Waals heterostructure tunnel diode containing MoS2 and and black phosphorus, leveraging their electrically tunable photoresponse and advanced computational algorithms for spectral reconstruction.
18 Jan 01:31

Reconfiguring nucleation for CVD growth of twisted bilayer MoS2 with a wide range of twist angles

by Manzhang Xu

Nature Communications, Published online: 17 January 2024; doi:10.1038/s41467-023-44598-w

Twisted bilayers of 2D semiconductors are being intensively investigated due to their emergent physical properties, but their controlled bottom-up synthesis remains challenging. Here, the authors report a confined-space chemical vapour deposition strategy to synthesize MoS2 bilayers with twist angles ranging from 0° to 120°.
18 Jan 01:31

A layered metal confines heavy electrons to two dimensions

Nature, Published online: 17 January 2024; doi:10.1038/d41586-023-04111-1

In heavy-fermion compounds, hybridization between mobile charge carriers and localized magnetic moments gives rise to exotic quantum phenomena. The discovery of heavy fermions in a van der Waals metal that can be peeled apart to a layer a few atoms thick allows these phenomena to be studied and manipulated in two dimensions.
18 Jan 01:30

Two-dimensional heavy fermions in the van der Waals metal CeSiI

by Victoria A. Posey

Nature, Published online: 17 January 2024; doi:10.1038/s41586-023-06868-x

We present comprehensive thermodynamic and spectroscopic evidence for an antiferromagnetically ordered heavy-fermion ground state in the van der Waals metal CeSiI.
18 Jan 01:29

Tuning commensurability in twisted van der Waals bilayers

by Yanxing Li

Nature, Published online: 17 January 2024; doi:10.1038/s41586-023-06904-w

Using valley-resolved scanning tunnelling spectroscopy, twisted WSe2 bilayers are studied, including incommensurate dodecagon quasicrystals at 30° and commensurate moiré crystals at 21.8° and 38.2°.
18 Jan 01:29

This AI just figured out geometry — is this a step towards artificial reasoning?

Nature, Published online: 17 January 2024; doi:10.1038/d41586-024-00145-1

How ‘AlphaGeometry’ solves Mathematical Olympiad-level problems, and what happens to an ecosystem after a mass predator die-off.
18 Jan 01:25

Amino‐Functionalized Graphdiyne Derivative as a Cathode Interface Layer with High Thickness Tolerance for Highly Efficient Organic Solar Cells

by Yuanyuan Kan, Yanna Sun, Yi Ren, Yixuan Xu, Xinyue Jiang, Haojiang Shen, Longlong Geng, Jianfeng Li, Ping Cai, Huajun Xu, Ke Gao, Yuliang Li
Amino-Functionalized Graphdiyne Derivative as a Cathode Interface Layer with High Thickness Tolerance for Highly Efficient Organic Solar Cells

An amino-functionalized graphdiyne derivative (GDY-N), with its high conductivity, appropriate LUMO energy level, and good solubility in alcohols, emerges as a remarkable cathode interlayer material. An impressive power conversion efficiency (PCE) of 19.30% is achieved for D18-Cl:L8-BO-based devices (certified result: 19.05%). This value is one of the highest reported for OSCs to date.


Abstract

Efficient cathode interfacial materials (CIMs) are essential components for effectively enhancing the performance of organic solar cells (OSCs). Although high-performance CIMs are desired to meet the requirements of various OSCs, potential candidates for CIMs are scarce. Herein, an amino-functionalized graphdiyne derivative (GDY-N) is developed, which represents the first example of GDY that exhibits favorable solubility in alcohol. Utilizing GDY-N as the CIM, an outstanding champion PCE of 19.30% for devices based on the D18-Cl:L8-BO (certified result: 19.05%) is achieved, which is among the highest efficiencies reported to date in OSCs. Remarkably, the devices based on GDY-N exhibit a thickness-insensitive characteristic, maintaining 95% of their initial efficiency even with a film thickness of 25 nm. Moreover, the GDY-N displays wide universality and facilitates exceptional stability in OSCs. This work not only enriches the diversity of GDY derivatives, but also demonstrates the feasibility of GDY derivatives as CIMs with high thickness tolerance in OSCs.

18 Jan 01:24

Heterogeneous Integration of Graphene and HfO2 Memristors

by Urška Trstenjak, Kalle Goß, Alexander Gutsche, Janghyun Jo, Marcus Wohlgemuth, Rafal E. Dunin‐Borkowski, Felix Gunkel, Regina Dittmann
Heterogeneous Integration of Graphene and HfO2 Memristors

Heterogeneous integration is achieved via quasi van der Waals growth of HfO2 on graphene using pulsed-laser deposition in relatively high partial pressure of argon, which limits the kinetically-induced damage of the graphene layer. It is demonstrated that graphene with a moderate defect concentration can be utilized as a bottom electrode in a memristive device.


Abstract

The past decade has seen a growing trend toward utilizing (quasi) van der Waals growth for the heterogeneous integration of various materials for advanced electronics. In this work, pulsed-laser deposition is used to grow HfO2 thin films on graphene/SiO2/Si. As graphene is easily damaged under standard oxide-film deposition conditions, the process needs to be adjusted to minimize the oxidation and the collision-induced damage. A systematic study is conducted in order to identify the crucial deposition parameters for diminishing the defect concentration in the graphene interlayer. For evaluating the quality of graphene, it is mainly relied on data obtained from Raman spectroscopy, using approaches beyond the Tuinstra-Koenig relation. The results show that the defects are mainly a consequence of the high kinetic energy of the plasma-plume particles. Using a relatively high Ar process pressure, a sufficiently low defect concentration is ensured, without compromising the quality of the HfO2 thin film. This enabled us to successfully prepare memristive devices with a filamentary type of switching, utilizing the graphene layer as a bottom electrode. The findings of this study can be easily transferred to other systems for the development of oxide electronic devices.

17 Jan 03:11

Author Correction: Subtle adversarial image manipulations influence both human and machine perception

by Vijay Veerabadran

Nature Communications, Published online: 16 January 2024; doi:10.1038/s41467-024-44826-x

Author Correction: Subtle adversarial image manipulations influence both human and machine perception
17 Jan 03:07

High Luminescence in Layered Double Perovskite via Formation of Terbium Intercalation Complex

by Priyesh Yadav, Swati Khurana, Raman Singh Lamba, Sahil Singh, Varsha Jha, Shubham Kumar, Sameer Sapra
High Luminescence in Layered Double Perovskite via Formation of Terbium Intercalation Complex

TOC shows the comparison of doping of Tb3+ and Tb3+ complex in (PEA)4NaInCl8. As a result of doping, PLQY is enhanced to 62% in Tb(L) doping, which is attributed to the efficient energy transfer in the case of Tb(L) doping, whereas, in the case of Tb3+ doping, PLQY is only 3%, because of the large energy gap between host and Tb3+ states.


Abstract

As the field of perovskite emerges, doping presents an optimistic way to upgrade the functionalities of these materials and improve the photoluminescence quantum yield (PLQY). While doping is well-explored in perovskites, it has received less attention in layered double perovskites (LDPs). Doping with lanthanides is particularly interesting for these wide bandgap materials because of their narrow and intense luminescence spectra. Here, the doping of (PEA)4NaInCl8 LDP (PEA = Phenylethylammonium) with Tb3+ and complex of Tb3+ with hexafluoroacetylacetonate (hfa) is studied, i.e., tetrakis β-diketonate complex. In both cases, energy transfer from host to dopant leading to photoluminescence (PL) emission due to Tb3+ f-f transitions is observed. However, in the case of Tb3+ doping, sensitization is not very efficient due to the nonideal alignment of energy levels of the host and resonance acceptor energy levels of Tb3+. Whereas, doping of (PEA)4NaInCl8 with Tb3+ in the form of hfa complex, provides a more ideal energetic environment for the efficient energy transfer from host to Tb3+ in the LDP matrix, resulting in a 20-fold enhancement in the luminescence efficiency. The doping of Tb3+ and Tb3+ complex in LDP sets the foundation for a new approach for the synthesis of LDPs-lanthanide host-guest systems for high PLQY.

17 Jan 03:05

Valley-centre tandem perovskite light-emitting diodes

by Hyeon-Dong Lee

Nature Nanotechnology, Published online: 16 January 2024; doi:10.1038/s41565-023-01581-2

A hybrid valley-centre tandem optical structure that combines perovskites and organic light-emitting diodes is demonstrated to obtain an efficient emitting device, showing the commercial potential of perovskite displays.